| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1N5927BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB |
auf Bestellung 5339 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| BAW56M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT723 Max. forward voltage: 1V Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| KSD1588YTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP Type of transistor: NPN Mounting: THT Power dissipation: 30W Collector current: 7A Pulsed collector current: 15A Collector-emitter voltage: 60V Current gain: 100...200 Kind of package: tube Polarisation: bipolar Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| GBPC3510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 522 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| LM317MADTRKG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 1.2...40V Tolerance: ±2% Manufacturer series: LM317M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
LM317MABDTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.2...40V Tolerance: ±4% Manufacturer series: LM317M |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| LM317MABDTRKG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.2...40V Tolerance: ±4% Manufacturer series: LM317M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SRV05-4MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
1N4007G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
auf Bestellung 2428 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 +1 |
MC74VHC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
MC100EPT22DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator Number of channels: 2 Manufacturer series: 100EPT Case: SO8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...3.6V DC Number of outputs: 2 Number of inputs: 4 |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
ESD9C5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 11V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 11V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
MBRD1045T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.72V Kind of package: reel; tape Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 3198 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| MC74HC1G14DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC14049UBDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16 Mounting: SMD Operating temperature: -55...125°C Type of integrated circuit: digital Case: TSSOP16 Kind of package: reel; tape Kind of integrated circuit: buffer; hex; inverter Number of inputs: 1 Number of channels: 6 Supply voltage: 3...18V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MCH3474-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD Mounting: SMD On-state resistance: 50mΩ Power dissipation: 1W Version: ESD Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: MCPH3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
MC74ACT138DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT Kind of package: reel; tape Manufacturer series: ACT Family: ACT Technology: TTL Type of integrated circuit: digital Case: SO16 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Number of inputs: 1 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: decoder; demultiplexer |
auf Bestellung 1808 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
LP2951ACDM-3.3RG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 3989 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
NCV4275ADS50R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.5V Output voltage: 5V Output current: 0.45A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...42V Manufacturer series: NCV4275A Integrated circuit features: RESET output Application: automotive industry |
auf Bestellung 1544 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
RFP70N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 156nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MBR120VLSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 45A Kind of package: reel; tape |
auf Bestellung 1617 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BSS138-G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| MCH3484-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD Mounting: SMD On-state resistance: 40mΩ Power dissipation: 1W Version: ESD Drain current: 4.5A Gate-source voltage: ±5V Drain-source voltage: 20V Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: MCPH3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
2N7002KT7G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Pulsed drain current: 5A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 5260 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
FDS4435BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 +1 |
FGY160T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| LM393EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Kind of comparator: universal Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 5nA Input bias current: 20nA Input offset voltage: 5mV Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Type of integrated circuit: comparator Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
BSS138K | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4204 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6425 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FCB110N65F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
NTS2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Power dissipation: 0.29W Gate-source voltage: ±8V Kind of package: reel; tape Polarisation: unipolar |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MBT3904DW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Collector current: 0.2A Power dissipation: 0.15W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar Mounting: SMD |
auf Bestellung 9497 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
1N4148-T26A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
auf Bestellung 26269 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
ES1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Capacitance: 10pF Reverse recovery time: 35ns Leakage current: 0.1mA Load current: 1A Max. forward voltage: 1.3V Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 0.4kV Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
1N4736A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA Power dissipation: 1W Case: DO41 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Type of diode: Zener Leakage current: 10µA Tolerance: ±5% Zener voltage: 6.8V Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
|
1N4736ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA Power dissipation: 1W Case: DO41 Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 10µA Tolerance: ±5% Zener voltage: 6.8V Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
 |
1N5931BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
auf Bestellung 1667 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
1N5344BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA Type of diode: Zener Power dissipation: 5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 10µA |
auf Bestellung 2912 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
ESD5B5.0ST1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Version: ESD Peak pulse power dissipation: 50W |
auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MC74AC125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Kind of package: tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
BAT54T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.4W Max. forward impulse current: 0.6A |
auf Bestellung 21989 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| SZESD5B5.0ST1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.8...7.8V Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
FDN306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.6A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 3032 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
MBRS130LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.395V Kind of package: reel; tape |
auf Bestellung 1863 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FDBL0150N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCD7N60TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCI7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 +1 |
FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FDBL0240N100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 210A Pulsed drain current: 910A Power dissipation: 300W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 79nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCD620N60ZF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 21.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCA20N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 75nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCMT360N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: PQFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
TIP42AG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Case: TO220AB Current gain: 15...75 Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
| FCD5N60TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 13.8A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDBL0110N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 170nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5927BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; reel,tape; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
auf Bestellung 5339 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 313+ | 0.23 EUR |
| 388+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| BAW56M3T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1588YTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 30W
Collector current: 7A
Pulsed collector current: 15A
Collector-emitter voltage: 60V
Current gain: 100...200
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 7A; 30W; TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 30W
Collector current: 7A
Pulsed collector current: 15A
Collector-emitter voltage: 60V
Current gain: 100...200
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3510W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 54+ | 1.34 EUR |
| 62+ | 1.16 EUR |
| 98+ | 0.73 EUR |
| 101+ | 0.71 EUR |
| LM317MADTRKG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±2%
Manufacturer series: LM317M
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±2%
Manufacturer series: LM317M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM317MABDTG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Manufacturer series: LM317M
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Manufacturer series: LM317M
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| LM317MABDTRKG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Manufacturer series: LM317M
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.2...40V
Tolerance: ±4%
Manufacturer series: LM317M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRV05-4MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4007G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 1158+ | 0.062 EUR |
| 1598+ | 0.045 EUR |
| 1819+ | 0.039 EUR |
| MC74VHC1G14DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC100EPT22DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Manufacturer series: 100EPT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of outputs: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Manufacturer series: 100EPT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of outputs: 2
Number of inputs: 4
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.67 EUR |
| 10+ | 10.42 EUR |
| ESD9C5.0ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 11V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 11V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 11V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 11V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 257+ | 0.28 EUR |
| 582+ | 0.12 EUR |
| 900+ | 0.08 EUR |
| 973+ | 0.074 EUR |
| 1090+ | 0.066 EUR |
| 4000+ | 0.058 EUR |
| 8000+ | 0.057 EUR |
| MBRD1045T4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Kind of package: reel; tape
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Kind of package: reel; tape
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD3155CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 3198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 214+ | 0.33 EUR |
| 329+ | 0.22 EUR |
| 397+ | 0.18 EUR |
| 496+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| MC74HC1G14DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14049UBDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: TSSOP16
Kind of package: reel; tape
Kind of integrated circuit: buffer; hex; inverter
Number of inputs: 1
Number of channels: 6
Supply voltage: 3...18V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP16
Mounting: SMD
Operating temperature: -55...125°C
Type of integrated circuit: digital
Case: TSSOP16
Kind of package: reel; tape
Kind of integrated circuit: buffer; hex; inverter
Number of inputs: 1
Number of channels: 6
Supply voltage: 3...18V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCH3474-TL-W |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 50mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 50mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT138DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Kind of package: reel; tape
Manufacturer series: ACT
Family: ACT
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Kind of package: reel; tape
Manufacturer series: ACT
Family: ACT
Technology: TTL
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: decoder; demultiplexer
auf Bestellung 1808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 135+ | 0.53 EUR |
| 144+ | 0.5 EUR |
| 161+ | 0.45 EUR |
| 250+ | 0.41 EUR |
| 1000+ | 0.36 EUR |
| LP2951ACDM-3.3RG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 3989 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 159+ | 0.45 EUR |
| 214+ | 0.33 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.26 EUR |
| 2500+ | 0.24 EUR |
| NCV4275ADS50R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
auf Bestellung 1544 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 43+ | 1.69 EUR |
| 44+ | 1.64 EUR |
| RFP70N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 50+ | 1.73 EUR |
| MBR120VLSFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 45A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 45A
Kind of package: reel; tape
auf Bestellung 1617 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 432+ | 0.17 EUR |
| 562+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 770+ | 0.093 EUR |
| 1000+ | 0.092 EUR |
| BSS138-G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 353+ | 0.2 EUR |
| 521+ | 0.14 EUR |
| 685+ | 0.1 EUR |
| MCH3484-TL-W |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KT7G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 596+ | 0.12 EUR |
| 1099+ | 0.065 EUR |
| 1603+ | 0.045 EUR |
| 1852+ | 0.039 EUR |
| 3500+ | 0.034 EUR |
| FDS4435BZ | |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1932 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 122+ | 0.59 EUR |
| 152+ | 0.47 EUR |
| 166+ | 0.43 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.36 EUR |
| FGY160T65SPD-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.8 EUR |
| LM393EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138K |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4204 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 468+ | 0.15 EUR |
| 713+ | 0.1 EUR |
| 842+ | 0.085 EUR |
| 1174+ | 0.061 EUR |
| 1323+ | 0.054 EUR |
| 3000+ | 0.046 EUR |
| BSS138 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6425 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 705+ | 0.1 EUR |
| 839+ | 0.085 EUR |
| 1127+ | 0.063 EUR |
| 1544+ | 0.046 EUR |
| 1656+ | 0.043 EUR |
| 3000+ | 0.038 EUR |
| 6000+ | 0.035 EUR |
| FCB110N65F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTS2101PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of package: reel; tape
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of package: reel; tape
Polarisation: unipolar
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 268+ | 0.27 EUR |
| 307+ | 0.23 EUR |
| 343+ | 0.21 EUR |
| 382+ | 0.19 EUR |
| MBT3904DW1T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 9497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 910+ | 0.079 EUR |
| 1299+ | 0.055 EUR |
| 1489+ | 0.048 EUR |
| 1645+ | 0.043 EUR |
| 1819+ | 0.039 EUR |
| 2000+ | 0.036 EUR |
| 5000+ | 0.032 EUR |
| 1N4148-T26A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 26269 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1191+ | 0.06 EUR |
| 1516+ | 0.047 EUR |
| 3473+ | 0.021 EUR |
| 5495+ | 0.013 EUR |
| 6330+ | 0.011 EUR |
| 7353+ | 0.0097 EUR |
| 7693+ | 0.0093 EUR |
| ES1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4736A-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: Ammo Pack
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4736ATR | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Power dissipation: 1W
Case: DO41
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5931BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 319+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 582+ | 0.12 EUR |
| 1N5344BRLG | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 2912 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 183+ | 0.39 EUR |
| 242+ | 0.3 EUR |
| 277+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| ESD5B5.0ST1G | |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Peak pulse power dissipation: 50W
auf Bestellung 1782 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 870+ | 0.082 EUR |
| 1226+ | 0.058 EUR |
| 1421+ | 0.05 EUR |
| MC74AC125DG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| BAT54T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 21989 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1352+ | 0.053 EUR |
| 1749+ | 0.041 EUR |
| 1961+ | 0.036 EUR |
| 2156+ | 0.033 EUR |
| 2370+ | 0.03 EUR |
| 3000+ | 0.026 EUR |
| 6000+ | 0.023 EUR |
| 9000+ | 0.022 EUR |
| SZESD5B5.0ST1G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN306P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3032 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 213+ | 0.34 EUR |
| 277+ | 0.26 EUR |
| 313+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| MBRS130LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 304+ | 0.24 EUR |
| 385+ | 0.19 EUR |
| 432+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| FDBL0150N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD7N60TM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCI7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH47N60F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.2 EUR |
| 10+ | 11.68 EUR |
| FDBL0240N100 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3843BVD1R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3843BVDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD620N60ZF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCA20N60-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT360N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP42AG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 84+ | 0.86 EUR |
| 98+ | 0.74 EUR |
| 105+ | 0.68 EUR |
| FCD5N60TM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDBL0110N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG040N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH