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FQB55N10TM | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.9A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 13.3A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 84A |
auf Bestellung 620 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD6N40CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 29.6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FQT5P10TF | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223 Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.8A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC7905CTG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900 Manufacturer series: MC7900 Operating temperature: 0...125°C Case: TO220AB Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Mounting: THT Output voltage: -5V Heatsink thickness: 0.508...0.61mm Output current: 1A Number of channels: 1 Voltage drop: 1.3V Tolerance: ±4% Kind of package: tube |
auf Bestellung 1546 Stücke: Lieferzeit 14-21 Tag (e) |
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| NV24C512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV24C512YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SA5534ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 3...20V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Integrated circuit features: low noise Input offset voltage: 2mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1597AMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck Type of integrated circuit: PMIC Input voltage: 4...5.5V Output current: 2A Frequency: 0.87...1.13MHz Mounting: SMD Case: DFN6 Topology: buck Number of channels: 1 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJ802G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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| PIR-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCS36000 Connection: Pmod connector development kits accessories features: motion sensor Kit contents: prototype board Components: NCS36000 Interface: GPIO; I2C Type of accessories for development kits: expansion board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBR20L45CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.47V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GBPC2508 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GBPC2508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PRISM1M-AR0830CSSC130110-GEVB | ONSEMI |
Category: Microchip development kits Description: PRISM1M-AR0830CSSC130110-GEVB |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| PRISM1M-AR1223NPSC130110-GEVB | ONSEMI |
Category: Unclassified Description: PRISM1M-AR1223NPSC130110-GEVB |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33274ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape |
auf Bestellung 1108 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV Type of integrated circuit: operational amplifier Bandwidth: 24MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...18V DC; 3...36V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 10V/μs Input offset voltage: 1.8mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC7812ACD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: 0...125°C Input voltage: 14.8...27V Case: D2PAK Kind of voltage regulator: fixed; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output current: 1A Voltage drop: 2V Tolerance: ±2% Output voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC7812ABD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 14.8...27V Case: D2PAK Kind of voltage regulator: fixed; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output current: 1A Voltage drop: 2V Tolerance: ±2% Output voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| ESD5581N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.2÷7.5V; bidirectional; X2DFN2; reel,tape Case: X2DFN2 Kind of package: reel; tape Mounting: SMD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.2...7.5V Semiconductor structure: bidirectional |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC33262PG | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC Type of integrated circuit: PMIC Output current: 0.5A Case: DIP8 Mounting: THT Application: SMPS Kind of package: tube Output voltage: 6.4V Operating voltage: 12...28V DC Kind of integrated circuit: PFC controller |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33262DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO8 Mounting: SMD Kind of package: reel; tape Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74HC597ADR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13 Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 13 Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD4216 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Mounting: THT Kind of output: triac; without zero voltage crossing driver Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FOD4216SD | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Kind of output: triac Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FOD4216SDV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FOD4216SV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: SMD Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FOD4216TV | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: THT Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FOD4216V | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: THT Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX85C12 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 2N5686G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2N5684G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 2SD1802T-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1W; DPAK Mounting: SMD Power dissipation: 1W Collector current: 3A Collector-emitter voltage: 50V Current gain: 200...400 Frequency: 150MHz Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MJ15025G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
Produkt ist nicht verfügbar |
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MJ15023G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
Produkt ist nicht verfügbar |
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MJ15015G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 180W Case: TO3 Mounting: THT Kind of package: in-tray Collector current: 15A Collector-emitter voltage: 120V Frequency: 6MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MJ15016G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3 Type of transistor: PNP Polarisation: bipolar Power dissipation: 115W Case: TO3 Mounting: THT Kind of package: in-tray Collector current: 15A Collector-emitter voltage: 120V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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D45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube Frequency: 40MHz |
auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC5569-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 7A Power dissipation: 1.3W Case: SOT89 Current gain: 560...200 Mounting: SMD Kind of package: reel; tape Frequency: 330MHz |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC5566-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 4A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
auf Bestellung 1035 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.4W |
auf Bestellung 1203 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54XV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBAT54HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 5500 Stücke: Lieferzeit 14-21 Tag (e) |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Current gain: 60 Mounting: THT Kind of package: tube Frequency: 50MHz |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJB44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KSE44H11 | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
Produkt ist nicht verfügbar |
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| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
Produkt ist nicht verfügbar |
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| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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|
2N3442G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 10A Power dissipation: 117W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 800kHz |
Produkt ist nicht verfügbar |
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|
FQPF11N40C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 35nC |
Produkt ist nicht verfügbar |
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| MC14520BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB Type of integrated circuit: digital Kind of integrated circuit: binary up counter Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO16WB Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Number of inputs: 3 Family: HEF4000B |
Produkt ist nicht verfügbar |
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 |
2SA1774T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 120...560 Frequency: 140MHz Polarisation: bipolar Type of transistor: PNP |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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| S2SA1774G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV333ASN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5 Type of integrated circuit: operational amplifier Mounting: SMT Case: SOT23-5 Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: zero-drift Number of channels: single; 1 Input offset current: 400pA Input bias current: 0.2nA Input offset voltage: 30µV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz |
auf Bestellung 2815 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV333ASQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SC70-5 Type of integrated circuit: operational amplifier Mounting: SMT Case: SC70-5 Operating temperature: -40...125°C Kind of package: reel; tape Integrated circuit features: zero-drift Number of channels: single; 1 Input offset current: 400pA Input bias current: 0.2nA Input offset voltage: 30µV Slew rate: 0.15V/μs Voltage supply range: 1.8...5.5V DC Bandwidth: 350kHz |
Produkt ist nicht verfügbar |
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FAN5333ASX | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC Type of integrated circuit: driver Mounting: SMD Case: SOT23-5 Operating temperature: -40...85°C Kind of integrated circuit: LED driver Integrated circuit features: linear dimming; PWM Number of channels: 1 Output current: 65mA Maximum output current: 1.5A Supply voltage: 1.8...5.5V DC Output voltage: 1.8...30V Frequency: 1.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQB55N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 31+ | 2.36 EUR |
| 34+ | 2.16 EUR |
| 38+ | 1.9 EUR |
| 50+ | 1.73 EUR |
| 100+ | 1.7 EUR |
| FQB19N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 45+ | 1.62 EUR |
| 52+ | 1.4 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.22 EUR |
| FQD6N40CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 59+ | 1.22 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.83 EUR |
| 250+ | 0.8 EUR |
| FQP11N40C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.17 EUR |
| 37+ | 1.94 EUR |
| 44+ | 1.64 EUR |
| 50+ | 1.56 EUR |
| FQD9N25TM-F080 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQT5P10TF |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7905CTG | |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
auf Bestellung 1546 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 164+ | 0.44 EUR |
| 180+ | 0.4 EUR |
| 193+ | 0.37 EUR |
| 206+ | 0.35 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.31 EUR |
| NV24C512MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C512YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SA5534ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 3...20V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Integrated circuit features: low noise
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 3...20V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Integrated circuit features: low noise
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1597AMNTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ802G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.47 EUR |
| 11+ | 6.89 EUR |
| 12+ | 6.21 EUR |
| 50+ | 6.08 EUR |
| PIR-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Connection: Pmod connector
development kits accessories features: motion sensor
Kit contents: prototype board
Components: NCS36000
Interface: GPIO; I2C
Type of accessories for development kits: expansion board
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Connection: Pmod connector
development kits accessories features: motion sensor
Kit contents: prototype board
Components: NCS36000
Interface: GPIO; I2C
Type of accessories for development kits: expansion board
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR20L45CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC2508 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC2508W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PRISM1M-AR0830CSSC130110-GEVB |
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 490.79 EUR |
| PRISM1M-AR1223NPSC130110-GEVB |
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 490.79 EUR |
| MC33274ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
auf Bestellung 1108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 103+ | 0.7 EUR |
| 112+ | 0.64 EUR |
| 115+ | 0.63 EUR |
| MC33274ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
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| MC7812ACD2TR4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: 0...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: 0...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC7812ABD2TR4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ESD5581N2T5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.2÷7.5V; bidirectional; X2DFN2; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.2...7.5V
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.2÷7.5V; bidirectional; X2DFN2; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.2...7.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC33262PG | |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output current: 0.5A
Case: DIP8
Mounting: THT
Application: SMPS
Kind of package: tube
Output voltage: 6.4V
Operating voltage: 12...28V DC
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Output current: 0.5A
Case: DIP8
Mounting: THT
Application: SMPS
Kind of package: tube
Output voltage: 6.4V
Operating voltage: 12...28V DC
Kind of integrated circuit: PFC controller
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 72+ | 0.99 EUR |
| MC33262DR2G |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74HC597ADR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
Manufacturer series: HC
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FOD4216 |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD4216SD |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD4216SDV |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD4216SV |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD4216TV |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD4216V |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C12 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5686G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5684G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SD1802T-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15025G | |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15023G | |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15015G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Frequency: 6MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Frequency: 6MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJ15016G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D45H11G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 106+ | 0.67 EUR |
| 133+ | 0.54 EUR |
| 146+ | 0.49 EUR |
| 2SC5569-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 143+ | 0.5 EUR |
| 174+ | 0.41 EUR |
| 2SC5566-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 115+ | 0.62 EUR |
| 156+ | 0.46 EUR |
| 177+ | 0.41 EUR |
| 500+ | 0.33 EUR |
| SBAT54T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
auf Bestellung 1203 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 651+ | 0.11 EUR |
| 921+ | 0.078 EUR |
| 1064+ | 0.067 EUR |
| SBAT54XV2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| NSVBAT54HT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 5500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 893+ | 0.08 EUR |
| 1078+ | 0.066 EUR |
| 1389+ | 0.051 EUR |
| 1839+ | 0.039 EUR |
| MJF44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| MJB44H11G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSE44H11 |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJW44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3442G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF11N40C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 35nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14520BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 3
Family: HEF4000B
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO16WB
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Number of inputs: 3
Family: HEF4000B
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2SA1774T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 367+ | 0.2 EUR |
| S2SA1774G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV333ASN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single; 1
Input offset current: 400pA
Input bias current: 0.2nA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single; 1
Input offset current: 400pA
Input bias current: 0.2nA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
auf Bestellung 2815 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 130+ | 0.55 EUR |
| 148+ | 0.48 EUR |
| 155+ | 0.46 EUR |
| NCV333ASQ3T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SC70-5
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single; 1
Input offset current: 400pA
Input bias current: 0.2nA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SC70-5
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Integrated circuit features: zero-drift
Number of channels: single; 1
Input offset current: 400pA
Input bias current: 0.2nA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FAN5333ASX |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Number of channels: 1
Output current: 65mA
Maximum output current: 1.5A
Supply voltage: 1.8...5.5V DC
Output voltage: 1.8...30V
Frequency: 1.5MHz
Category: LED drivers
Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC
Type of integrated circuit: driver
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Kind of integrated circuit: LED driver
Integrated circuit features: linear dimming; PWM
Number of channels: 1
Output current: 65mA
Maximum output current: 1.5A
Supply voltage: 1.8...5.5V DC
Output voltage: 1.8...30V
Frequency: 1.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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