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SMBJ30A SMBJ30A ONSEMI SMBJ5V0A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74HC157ADG MC74HC157ADG ONSEMI mc74hc157a-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
Produkt ist nicht verfügbar
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FDMQ8203 ONSEMI FDMQ8203.PDF Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Produkt ist nicht verfügbar
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FDMQ86530L ONSEMI fdmq86530l-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NCV1117ST33T3G ONSEMI ncp1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV4274CST33T3G ONSEMI ncv4274c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV4274AST33T3G ONSEMI ncv4274-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV8664CST33T3G ONSEMI ncv8664c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV4264-2ST33T3G ONSEMI ncv4264-2-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4264-2CST33T3G ONSEMI ncv4264-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4266-2CST33T3G ONSEMI ncv4266-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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2SA2126-TL-H 2SA2126-TL-H ONSEMI en7990-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
184+0.39 EUR
209+0.34 EUR
232+0.31 EUR
700+0.29 EUR
Mindestbestellmenge: 90
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2SC6097-TL-E 2SC6097-TL-E ONSEMI 2sc6097-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
69+1.04 EUR
115+0.62 EUR
250+0.51 EUR
500+0.45 EUR
700+0.43 EUR
Mindestbestellmenge: 54
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CAT25160VI-GT3 ONSEMI CAT25080-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25160YI-GT3 ONSEMI CAT25080-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESD9X5.0ST5G ESD9X5.0ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
auf Bestellung 1085 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
834+0.086 EUR
1000+0.072 EUR
1085+0.066 EUR
Mindestbestellmenge: 625
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SZESD9X5.0ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBT589LT1G MMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
auf Bestellung 1401 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 143
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NSVMMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Produkt ist nicht verfügbar
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MC74AC574DTR2G ONSEMI MC74AC574-D.pdf Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
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MC74AC574DWG ONSEMI MC74AC574-D.pdf description Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
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MC74AC574DWR2G ONSEMI MC74ACT574DWR2G.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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NRVBSS24NT3G ONSEMI ss24-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Produkt ist nicht verfügbar
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RB521S30T1G RB521S30T1G ONSEMI RB521S30T1G.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.34 EUR
Mindestbestellmenge: 53
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RB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T1G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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NSVRB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDPC8016S ONSEMI fdpc8016s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
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FDMC8015L ONSEMI fdmc8015l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Kind of channel: enhancement
Case: WDFN8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 24W
Gate-source voltage: ±20V
Drain current: 18A
Drain-source voltage: 40V
Pulsed drain current: 30A
Kind of package: reel; tape
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FDMC8010 ONSEMI fdmc8010-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Kind of channel: enhancement
Case: Power33
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 2mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 30V
Pulsed drain current: 120A
Kind of package: reel; tape
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FDMC8010DC ONSEMI fdmc8010dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 1.89mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain current: 99A
Drain-source voltage: 30V
Pulsed drain current: 788A
Kind of package: reel; tape
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FDPC8011S ONSEMI fdpc8011s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDPC8012S ONSEMI fdpc8012s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDPC8013S ONSEMI fdpc8013s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TIP121G TIP121G ONSEMI TIP12xG.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Kind of transistor: Darlington
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 5A
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
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NFVA25012NP2T ONSEMI nfva25012np2t-d.pdf Category: Motor and PWM drivers
Description: IC: driver; DIP; 50A
Operating temperature: -40...150°C
Mounting: THT
Output current: 50A
Application: automotive industry
Case: DIP
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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NCV4275ADS50R4G NCV4275ADS50R4G ONSEMI NCV4275A.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCV4275A
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 5.5...42V
Integrated circuit features: RESET output
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
48+1.52 EUR
Mindestbestellmenge: 39
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MRA4007T3G MRA4007T3G ONSEMI MRA4006T3G-DTE.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
383+0.19 EUR
Mindestbestellmenge: 295
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NRVA4007T3G NRVA4007T3G ONSEMI mra4003t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
auf Bestellung 3987 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
725+0.099 EUR
864+0.083 EUR
973+0.074 EUR
Mindestbestellmenge: 455
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SMBJ36A SMBJ36A ONSEMI SMBJ5V0A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RSL10-002GEVB ONSEMI rsl10-d.pdf Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
Produkt ist nicht verfügbar
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RSL10-SIP-001GEVB ONSEMI Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
Produkt ist nicht verfügbar
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LM2574DW-ADJR2G LM2574DW-ADJR2G ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Case: SO16-W
Output current: 0.5A
Output voltage: 1.23...37V DC
Input voltage: 4.75...40V DC
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
auf Bestellung 3 Stücke:
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LM2575T-3.3G LM2575T-3.3G ONSEMI LM2575-ON-DTE.PDF Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Output voltage: 3.3V DC
Input voltage: 4.75...40V DC
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32+2.26 EUR
35+2.09 EUR
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MMBFJ111 MMBFJ111 ONSEMI J111.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
193+0.37 EUR
278+0.26 EUR
325+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 129
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J111 J111 ONSEMI J111.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Power dissipation: 0.625W
Gate current: 50mA
On-state resistance: 30Ω
Kind of package: bulk
Case: TO92
auf Bestellung 3812 Stücke:
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152+0.47 EUR
358+0.2 EUR
407+0.18 EUR
511+0.14 EUR
Mindestbestellmenge: 152
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UJ4C075060K4S UJ4C075060K4S ONSEMI UJ4C075060K4S-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.68 EUR
7+11.23 EUR
10+10.05 EUR
30+9.52 EUR
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MMBFJ309LT1G MMBFJ309LT1G ONSEMI MMBFJ309LT1G.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 5093 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
472+0.15 EUR
527+0.14 EUR
582+0.12 EUR
Mindestbestellmenge: 278
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J109 J109 ONSEMI j109-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -25V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Gate current: 10mA
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
Mindestbestellmenge: 76
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MMBF4416A MMBF4416A ONSEMI MMBF4416A.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1477 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
544+0.13 EUR
618+0.12 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 417
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2SK932-24-TB-E 2SK932-24-TB-E ONSEMI 2SK932.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
170+0.42 EUR
194+0.37 EUR
219+0.33 EUR
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MMBF4393LT1G MMBF4393LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
295+0.24 EUR
379+0.19 EUR
428+0.17 EUR
516+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 228
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MMBFJ202 MMBFJ202 ONSEMI MMBFJ201_MMBFJ202.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
207+0.35 EUR
248+0.29 EUR
463+0.15 EUR
532+0.13 EUR
Mindestbestellmenge: 157
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MMBF4392LT1G MMBF4392LT1G ONSEMI MMBF439xLT1.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Produkt ist nicht verfügbar
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MMBF4391LT1G MMBF4391LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
auf Bestellung 2621 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
161+0.45 EUR
180+0.4 EUR
278+0.26 EUR
350+0.2 EUR
511+0.14 EUR
Mindestbestellmenge: 143
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CPH3910-TL-E CPH3910-TL-E ONSEMI ENA1965-D.html Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
137+0.52 EUR
161+0.44 EUR
Mindestbestellmenge: 100
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MMBFJ110 MMBFJ110 ONSEMI mmbfj110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
auf Bestellung 2814 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
120+0.6 EUR
137+0.52 EUR
231+0.31 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 100
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MMBF4416 MMBF4416 ONSEMI MMBF4416.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
432+0.17 EUR
506+0.14 EUR
550+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 358
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MMBFJ108 MMBFJ108 ONSEMI j109-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
auf Bestellung 1486 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
163+0.44 EUR
224+0.32 EUR
253+0.28 EUR
266+0.27 EUR
Mindestbestellmenge: 99
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SMMBF4393LT1G SMMBF4393LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 30mA; 225mW; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
133+0.54 EUR
208+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
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SMBJ30A SMBJ5V0A.pdf
SMBJ30A
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74HC157ADG mc74hc157a-d.pdf
MC74HC157ADG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: TTL
Number of channels: 4
Kind of integrated circuit: data selector; multiplexer
Manufacturer series: HC
Family: HC
Number of inputs: 2
Produkt ist nicht verfügbar
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FDMQ8203 FDMQ8203.PDF
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Produkt ist nicht verfügbar
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FDMQ86530L fdmq86530l-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NCV1117ST33T3G ncp1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
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NCV4274CST33T3G ncv4274c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV4274AST33T3G ncv4274-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV8664CST33T3G ncv8664c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV4264-2ST33T3G ncv4264-2-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4264-2CST33T3G ncv4264-2c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Output voltage: 3.3V
Produkt ist nicht verfügbar
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NCV4266-2CST33T3G ncv4266-2c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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2SA2126-TL-H en7990-d.pdf
2SA2126-TL-H
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
184+0.39 EUR
209+0.34 EUR
232+0.31 EUR
700+0.29 EUR
Mindestbestellmenge: 90
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2SC6097-TL-E 2sc6097-d.pdf
2SC6097-TL-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.8W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 300...600
Frequency: 390MHz
Polarisation: bipolar
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
69+1.04 EUR
115+0.62 EUR
250+0.51 EUR
500+0.45 EUR
700+0.43 EUR
Mindestbestellmenge: 54
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CAT25160VI-GT3 CAT25080-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT25160YI-GT3 CAT25080-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: SPI
Memory organisation: 2048x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESD9X5.0ST5G esd9x3.3st5g-d.pdf
ESD9X5.0ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
auf Bestellung 1085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
834+0.086 EUR
1000+0.072 EUR
1085+0.066 EUR
Mindestbestellmenge: 625
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SZESD9X5.0ST5G esd9x3.3st5g-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBT589LT1G mmbt589lt1-d.pdf
MMBT589LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
auf Bestellung 1401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 143
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NSVMMBT589LT1G mmbt589lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Produkt ist nicht verfügbar
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MC74AC574DTR2G MC74AC574-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC574DWG description MC74AC574-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC574DWR2G MC74ACT574DWR2G.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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NRVBSS24NT3G ss24-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Produkt ist nicht verfügbar
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RB521S30T1G RB521S30T1G.PDF
RB521S30T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.34 EUR
Mindestbestellmenge: 53
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RB521S30T5G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB521S30T1G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVRB521S30T5G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDPC8016S fdpc8016s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 25/67nC
On-state resistance: 3.8/1.4mΩ
Power dissipation: 21/42W
Gate-source voltage: ±12V
Drain current: 60/100A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC8015L fdmc8015l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Kind of channel: enhancement
Case: WDFN8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 24W
Gate-source voltage: ±20V
Drain current: 18A
Drain-source voltage: 40V
Pulsed drain current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC8010 fdmc8010-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 120A; 54W; Power33
Kind of channel: enhancement
Case: Power33
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 2mΩ
Power dissipation: 54W
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 30V
Pulsed drain current: 120A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC8010DC fdmc8010dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 1.89mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain current: 99A
Drain-source voltage: 30V
Pulsed drain current: 788A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDPC8011S fdpc8011s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 20/60A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 19/64nC
On-state resistance: 6/1.8mΩ
Power dissipation: 1.6/2W
Drain current: 20/60A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDPC8012S fdpc8012s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 35/88A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 8/25nC
On-state resistance: 7/2.2mΩ
Power dissipation: 1.6/2W
Drain current: 35/88A
Drain-source voltage: 25V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDPC8013S fdpc8013s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 20/55A; 1.6/2W; PQFN8
Kind of channel: enhancement
Case: PQFN8
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13/44nC
On-state resistance: 6.4/1.9mΩ
Power dissipation: 1.6/2W
Gate-source voltage: ±20V
Drain current: 20/55A
Drain-source voltage: 30V
Semiconductor structure: asymmetric
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TIP121G TIP12xG.PDF
TIP121G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Kind of package: tube
Polarisation: bipolar
Case: TO220AB
Kind of transistor: Darlington
Mounting: THT
Type of transistor: NPN
Power dissipation: 2W
Collector current: 5A
Collector-emitter voltage: 80V
Produkt ist nicht verfügbar
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NFVA25012NP2T nfva25012np2t-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; DIP; 50A
Operating temperature: -40...150°C
Mounting: THT
Output current: 50A
Application: automotive industry
Case: DIP
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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NCV4275ADS50R4G NCV4275A.PDF
NCV4275ADS50R4G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCV4275A
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Application: automotive industry
Input voltage: 5.5...42V
Integrated circuit features: RESET output
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
48+1.52 EUR
Mindestbestellmenge: 39
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MRA4007T3G MRA4006T3G-DTE.PDF
MRA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
383+0.19 EUR
Mindestbestellmenge: 295
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NRVA4007T3G mra4003t3-d.pdf
NRVA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. forward impulse current: 30A
Kind of package: reel; tape
Max. load current: 2A
Application: automotive industry
auf Bestellung 3987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
725+0.099 EUR
864+0.083 EUR
973+0.074 EUR
Mindestbestellmenge: 455
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SMBJ36A SMBJ5V0A.pdf
SMBJ36A
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RSL10-002GEVB rsl10-d.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
Produkt ist nicht verfügbar
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RSL10-SIP-001GEVB
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
Produkt ist nicht verfügbar
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LM2574DW-ADJR2G LM2574.pdf
LM2574DW-ADJR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Case: SO16-W
Output current: 0.5A
Output voltage: 1.23...37V DC
Input voltage: 4.75...40V DC
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Topology: buck
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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LM2575T-3.3G LM2575-ON-DTE.PDF
LM2575T-3.3G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Topology: buck
Frequency: 42...63kHz
Operating temperature: -40...125°C
Number of channels: 1
Output current: 1A
Output voltage: 3.3V DC
Input voltage: 4.75...40V DC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
35+2.09 EUR
Mindestbestellmenge: 32
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MMBFJ111 J111.pdf
MMBFJ111
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
193+0.37 EUR
278+0.26 EUR
325+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 129
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J111 J111.pdf
J111
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Power dissipation: 0.625W
Gate current: 50mA
On-state resistance: 30Ω
Kind of package: bulk
Case: TO92
auf Bestellung 3812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
358+0.2 EUR
407+0.18 EUR
511+0.14 EUR
Mindestbestellmenge: 152
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UJ4C075060K4S UJ4C075060K4S-D.PDF
UJ4C075060K4S
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.68 EUR
7+11.23 EUR
10+10.05 EUR
30+9.52 EUR
Mindestbestellmenge: 6
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MMBFJ309LT1G MMBFJ309LT1G.PDF
MMBFJ309LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 5093 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
348+0.21 EUR
397+0.18 EUR
472+0.15 EUR
527+0.14 EUR
582+0.12 EUR
Mindestbestellmenge: 278
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J109 j109-d.pdf
J109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -25V
On-state resistance: 12Ω
Mounting: THT
Kind of package: tape
Gate current: 10mA
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
Mindestbestellmenge: 76
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MMBF4416A MMBF4416A.pdf
MMBF4416A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
618+0.12 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 417
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2SK932-24-TB-E 2SK932.PDF
2SK932-24-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
170+0.42 EUR
194+0.37 EUR
219+0.33 EUR
Mindestbestellmenge: 136
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MMBF4393LT1G mmbf4391lt1-d.pdf
MMBF4393LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
295+0.24 EUR
379+0.19 EUR
428+0.17 EUR
516+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 228
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MMBFJ202 MMBFJ201_MMBFJ202.pdf
MMBFJ202
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 900µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
207+0.35 EUR
248+0.29 EUR
463+0.15 EUR
532+0.13 EUR
Mindestbestellmenge: 157
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MMBF4392LT1G MMBF439xLT1.PDF
MMBF4392LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Produkt ist nicht verfügbar
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MMBF4391LT1G mmbf4391lt1-d.pdf
MMBF4391LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
auf Bestellung 2621 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
161+0.45 EUR
180+0.4 EUR
278+0.26 EUR
350+0.2 EUR
511+0.14 EUR
Mindestbestellmenge: 143
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CPH3910-TL-E ENA1965-D.html
CPH3910-TL-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
137+0.52 EUR
161+0.44 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ110 mmbfj110-d.pdf
MMBFJ110
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
auf Bestellung 2814 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
120+0.6 EUR
137+0.52 EUR
231+0.31 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
MMBF4416 MMBF4416.pdf
MMBF4416
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
506+0.14 EUR
550+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 358
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MMBFJ108 j109-d.pdf
MMBFJ108
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
auf Bestellung 1486 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
163+0.44 EUR
224+0.32 EUR
253+0.28 EUR
266+0.27 EUR
Mindestbestellmenge: 99
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SMMBF4393LT1G mmbf4391lt1-d.pdf
SMMBF4393LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 30mA; 225mW; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 2909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
133+0.54 EUR
208+0.34 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 84
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