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MOC3072SM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
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MOC3072SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3072SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3072TVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3073SR2M ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3073SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3073SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MC78L05ABPRMG MC78L05ABPRMG ONSEMI mc78l00a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
Produkt ist nicht verfügbar
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FDD86367 FDD86367 ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
On-state resistance: 8.4mΩ
Case: DPAK
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 88nC
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
37+1.94 EUR
100+1.56 EUR
Mindestbestellmenge: 24
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FDD86367-F085 ONSEMI fdd86367_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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FFSP10120A ONSEMI ffsp10120a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 10A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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FFSP1065A ONSEMI ffsp1065a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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FFSP1065B-F085 ONSEMI ffsp1065b-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. off-state voltage: 650V
Application: automotive industry
Produkt ist nicht verfügbar
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FFSP1265A ONSEMI ffsp1265a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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FFSP15120A ONSEMI ffsp15120a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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GBU6M GBU6M ONSEMI GBU6x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
75+0.96 EUR
Mindestbestellmenge: 69
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MJ15024G MJ15024G ONSEMI MJ15022.PDF description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
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MMBT5087LT1G MMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
575+0.12 EUR
817+0.088 EUR
951+0.075 EUR
1111+0.064 EUR
Mindestbestellmenge: 385
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NSVMMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Produkt ist nicht verfügbar
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KSC5027OTU ONSEMI KSC5027.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
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FDMS4D0N12C ONSEMI fdms4d0n12c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTD2955T4G NTD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Pulsed drain current: -18A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1838 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
74+0.97 EUR
100+0.74 EUR
250+0.67 EUR
500+0.62 EUR
1000+0.54 EUR
Mindestbestellmenge: 40
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FUSB15201VMNWTWG ONSEMI FUSB15201-D.PDF Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Interface: I2C
DC supply current: 330µA
Supply voltage: 3...5.5V
Frequency: 24MHz
Application: automotive industry
Produkt ist nicht verfügbar
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FOD2711ASDV FOD2711ASDV ONSEMI FOD2711ASDV.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: SO8
Type of optocoupler: optocoupler
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
175+0.41 EUR
182+0.39 EUR
188+0.38 EUR
Mindestbestellmenge: 120
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FOD2711A FOD2711A ONSEMI FOD2711A-D.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: DIP8
Type of optocoupler: optocoupler
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
161+0.45 EUR
167+0.43 EUR
186+0.39 EUR
250+0.38 EUR
500+0.37 EUR
Mindestbestellmenge: 152
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KSD2012GTU ONSEMI KSD2012.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSC1845FTA KSC1845FTA ONSEMI KSC1845.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 3125 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
360+0.2 EUR
510+0.14 EUR
589+0.12 EUR
807+0.089 EUR
1000+0.078 EUR
2000+0.069 EUR
Mindestbestellmenge: 239
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FQD11P06TM FQD11P06TM ONSEMI FQD11P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
54+1.33 EUR
63+1.14 EUR
91+0.79 EUR
104+0.69 EUR
Mindestbestellmenge: 43
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FQD17P06TM FQD17P06TM ONSEMI FQD17P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
57+1.26 EUR
65+1.11 EUR
90+0.8 EUR
102+0.7 EUR
Mindestbestellmenge: 45
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FQA36P15 FQA36P15 ONSEMI FQA36P15.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.11 EUR
18+4.2 EUR
30+3.56 EUR
Mindestbestellmenge: 15
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FQP47P06 FQP47P06 ONSEMI FQP47P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
24+3.07 EUR
26+2.76 EUR
30+2.43 EUR
50+2.42 EUR
Mindestbestellmenge: 18
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FQD8P10TM FQD8P10TM ONSEMI FQD8P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
70+1.02 EUR
80+0.9 EUR
115+0.62 EUR
135+0.53 EUR
500+0.46 EUR
Mindestbestellmenge: 59
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FQD7P20TM FQD7P20TM ONSEMI FQD7P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1898 Stücke:
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43+1.7 EUR
72+1.01 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 43
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FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3386 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
31+2.32 EUR
35+2.04 EUR
43+1.7 EUR
50+1.47 EUR
100+1.34 EUR
Mindestbestellmenge: 26
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FQP17P06 FQP17P06 ONSEMI FQP17P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 61 Stücke:
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35+2.04 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 35
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FQT7N10LTF FQT7N10LTF ONSEMI FQT7N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3668 Stücke:
Lieferzeit 14-21 Tag (e)
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FQD3P50TM FQD3P50TM ONSEMI FQD3P50.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 496 Stücke:
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58+1.24 EUR
66+1.09 EUR
73+0.99 EUR
100+0.89 EUR
250+0.87 EUR
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FQB34P10TM FQB34P10TM ONSEMI FQB34P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 325 Stücke:
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FQD12N20LTM FQD12N20LTM ONSEMI FQD12N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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74+0.98 EUR
84+0.86 EUR
113+0.63 EUR
128+0.56 EUR
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FDMC2523P
+1
 		FDMC2523P ONSEMI FDMC2523P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
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36+2 EUR
48+1.5 EUR
53+1.37 EUR
63+1.14 EUR
100+1.06 EUR
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FQB12P20TM FQB12P20TM ONSEMI FQB12P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 302 Stücke:
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32+2.25 EUR
37+1.97 EUR
50+1.46 EUR
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FQPF47P06 FQPF47P06 ONSEMI FQPF47P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
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FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI FQB47P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 635 Stücke:
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23+3.17 EUR
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FQA70N10 FQA70N10 ONSEMI FQA70N10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
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30+2.42 EUR
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FQD13N10LTM FQD13N10LTM ONSEMI FQD13N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1683 Stücke:
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80+0.9 EUR
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132+0.54 EUR
153+0.47 EUR
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FQD19N10LTM FQD19N10LTM ONSEMI FQD19N10L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Case: DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.11Ω
Kind of channel: enhancement
Power dissipation: 50W
Drain current: 9.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: QFET®
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 2084 Stücke:
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45+1.62 EUR
57+1.27 EUR
65+1.11 EUR
90+0.8 EUR
103+0.7 EUR
500+0.63 EUR
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FQT4N20LTF FQT4N20LTF ONSEMI FQT4N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3228 Stücke:
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80+0.9 EUR
106+0.68 EUR
147+0.49 EUR
250+0.44 EUR
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FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
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32+2.29 EUR
40+1.79 EUR
46+1.56 EUR
62+1.16 EUR
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FQD13N06LTM FQD13N06LTM ONSEMI FQD13N06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2062 Stücke:
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75+0.96 EUR
120+0.6 EUR
141+0.51 EUR
176+0.41 EUR
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FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 141 Stücke:
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29+2.5 EUR
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FQB5N90TM FQB5N90TM ONSEMI FQB5N90.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 709 Stücke:
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23+3.23 EUR
25+2.92 EUR
27+2.72 EUR
30+2.43 EUR
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FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
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FQB55N10TM FQB55N10TM ONSEMI FQB55N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 237 Stücke:
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38+1.9 EUR
50+1.73 EUR
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FQB19N20LTM FQB19N20LTM ONSEMI FQB19N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
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45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
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FQD6N40CTM FQD6N40CTM ONSEMI FQD6N40C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
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59+1.22 EUR
68+1.06 EUR
100+0.83 EUR
250+0.8 EUR
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FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
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37+1.94 EUR
44+1.64 EUR
50+1.56 EUR
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FQD9N25TM-F080 FQD9N25TM-F080 ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
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FQT5P10TF FQT5P10TF ONSEMI FQT5P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC7905CTG MC7905CTG ONSEMI MC7900-D.PDF description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
auf Bestellung 1546 Stücke:
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117+0.61 EUR
164+0.44 EUR
180+0.4 EUR
193+0.37 EUR
206+0.35 EUR
250+0.32 EUR
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NV24C512MUW3VTBG ONSEMI NV24C512MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
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MOC3072SM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3072M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
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MOC3072SR2VM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3072SVM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3072TVM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3073SR2M moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MOC3073SR2VM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MOC3073SVM moc3072m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
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MC78L05ABPRMG mc78l00a-d.pdf
MC78L05ABPRMG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
Produkt ist nicht verfügbar
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FDD86367 fdd86367-d.pdf
FDD86367
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
On-state resistance: 8.4mΩ
Case: DPAK
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 88nC
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
37+1.94 EUR
100+1.56 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FDD86367-F085 fdd86367_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP10120A ffsp10120a-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 10A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065A ffsp1065a-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1065B-F085 ffsp1065b-f085-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.7V
Load current: 10A
Max. off-state voltage: 650V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP1265A ffsp1265a-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP15120A ffsp15120a-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.75V
Load current: 15A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU6M GBU6x.PDF
GBU6M
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
75+0.96 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
MJ15024G description MJ15022.PDF
MJ15024G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT5087LT1G mmbt5087lt1-d.pdf
MMBT5087LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
auf Bestellung 1111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
575+0.12 EUR
817+0.088 EUR
951+0.075 EUR
1111+0.064 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
NSVMMBT5087LT1G mmbt5087lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC5027OTU KSC5027.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 50W
Case: TO220AB
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS4D0N12C fdms4d0n12c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 114A; Idm: 628A; 106W; PQFN8
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 82nC
Kind of package: reel; tape
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Power dissipation: 106W
Drain current: 114A
Drain-source voltage: 120V
Pulsed drain current: 628A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD2955T4G ntd2955-d.pdf
NTD2955T4G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Pulsed drain current: -18A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1838 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
74+0.97 EUR
100+0.74 EUR
250+0.67 EUR
500+0.62 EUR
1000+0.54 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
FUSB15201VMNWTWG FUSB15201-D.PDF
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; QFN24; 3÷5.5V; 24MHz; Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Interface: I2C
DC supply current: 330µA
Supply voltage: 3...5.5V
Frequency: 24MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD2711ASDV FOD2711ASDV.pdf
FOD2711ASDV
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: SO8
Type of optocoupler: optocoupler
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
175+0.41 EUR
182+0.39 EUR
188+0.38 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
FOD2711A FOD2711A-D.pdf
FOD2711A
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 5kV
Case: DIP8
Type of optocoupler: optocoupler
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
161+0.45 EUR
167+0.43 EUR
186+0.39 EUR
250+0.38 EUR
500+0.37 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
KSD2012GTU KSD2012.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC1845FTA KSC1845.PDF
KSC1845FTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: NPN
Mounting: THT
Case: TO92 Formed
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 3125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
360+0.2 EUR
510+0.14 EUR
589+0.12 EUR
807+0.089 EUR
1000+0.078 EUR
2000+0.069 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TM FQD11P06.pdf
FQD11P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
54+1.33 EUR
63+1.14 EUR
91+0.79 EUR
104+0.69 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
FQD17P06TM FQD17P06.pdf
FQD17P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
57+1.26 EUR
65+1.11 EUR
90+0.8 EUR
102+0.7 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
FQA36P15 FQA36P15.pdf
FQA36P15
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
18+4.2 EUR
30+3.56 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FQP47P06 FQP47P06.pdf
FQP47P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
24+3.07 EUR
26+2.76 EUR
30+2.43 EUR
50+2.42 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
FQD8P10TM FQD8P10.pdf
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
70+1.02 EUR
80+0.9 EUR
115+0.62 EUR
135+0.53 EUR
500+0.46 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
FQD7P20TM FQD7P20.pdf
FQD7P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -3.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1898 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
72+1.01 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3386 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
31+2.32 EUR
35+2.04 EUR
43+1.7 EUR
50+1.47 EUR
100+1.34 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
FQP17P06 FQP17P06.pdf
FQP17P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
50+1.46 EUR
53+1.36 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
FQT7N10LTF FQT7N10L.pdf
FQT7N10LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.36A; 2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.36A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
500+0.42 EUR
1000+0.41 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
FQD3P50TM FQD3P50.pdf
FQD3P50TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
58+1.24 EUR
66+1.09 EUR
73+0.99 EUR
100+0.89 EUR
250+0.87 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FQB34P10TM FQB34P10.pdf
FQB34P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
23+3.2 EUR
26+2.82 EUR
31+2.36 EUR
100+2.23 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
FQD12N20LTM FQD12N20L.pdf
FQD12N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
74+0.98 EUR
84+0.86 EUR
113+0.63 EUR
128+0.56 EUR
500+0.47 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
FDMC2523P FDMC2523P.pdf
FDMC2523P
+1
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.8A; 42W; MLP8
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
48+1.5 EUR
53+1.37 EUR
63+1.14 EUR
100+1.06 EUR
250+1 EUR
Mindestbestellmenge: 36
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FQB12P20TM FQB12P20.pdf
FQB12P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.8 EUR
32+2.25 EUR
37+1.97 EUR
50+1.46 EUR
100+1.43 EUR
Mindestbestellmenge: 26
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FQPF47P06 FQPF47P06.pdf
FQPF47P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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FQB47P06TM-AM002 FQB47P06.pdf
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
23+3.17 EUR
26+2.85 EUR
50+2.76 EUR
Mindestbestellmenge: 16
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FQA70N10 FQA70N10.pdf
FQA70N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
30+2.42 EUR
31+2.33 EUR
Mindestbestellmenge: 18
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FQD13N10LTM FQD13N10L.pdf
FQD13N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1683 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
80+0.9 EUR
92+0.78 EUR
132+0.54 EUR
153+0.47 EUR
500+0.37 EUR
Mindestbestellmenge: 65
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FQD19N10LTM FQD19N10L.pdf
FQD19N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Case: DPAK
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.11Ω
Kind of channel: enhancement
Power dissipation: 50W
Drain current: 9.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Technology: QFET®
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 2084 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
57+1.27 EUR
65+1.11 EUR
90+0.8 EUR
103+0.7 EUR
500+0.63 EUR
Mindestbestellmenge: 45
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FQT4N20LTF FQT4N20L.pdf
FQT4N20LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
106+0.68 EUR
147+0.49 EUR
250+0.44 EUR
Mindestbestellmenge: 80
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FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
40+1.79 EUR
46+1.56 EUR
62+1.16 EUR
100+1.06 EUR
Mindestbestellmenge: 32
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FQD13N06LTM FQD13N06L.pdf
FQD13N06LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2062 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
120+0.6 EUR
141+0.51 EUR
176+0.41 EUR
250+0.4 EUR
Mindestbestellmenge: 75
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FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
29+2.5 EUR
33+2.19 EUR
50+1.64 EUR
Mindestbestellmenge: 23
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FQB5N90TM FQB5N90.pdf
FQB5N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
25+2.92 EUR
27+2.72 EUR
30+2.43 EUR
50+2.2 EUR
100+2.19 EUR
Mindestbestellmenge: 23
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FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 31A
Power dissipation: 220W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
34+2.16 EUR
50+1.96 EUR
Mindestbestellmenge: 22
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FQB55N10TM FQB55N10.pdf
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
31+2.36 EUR
34+2.16 EUR
38+1.9 EUR
50+1.73 EUR
100+1.7 EUR
Mindestbestellmenge: 24
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FQB19N20LTM FQB19N20L.pdf
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
100+1.22 EUR
Mindestbestellmenge: 32
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FQD6N40CTM FQD6N40C.pdf
FQD6N40CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
59+1.22 EUR
68+1.06 EUR
100+0.83 EUR
250+0.8 EUR
Mindestbestellmenge: 51
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FQP11N40C FQP11N40C.pdf
FQP11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
37+1.94 EUR
44+1.64 EUR
50+1.56 EUR
Mindestbestellmenge: 33
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FQD9N25TM-F080 ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw
FQD9N25TM-F080
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQT5P10TF FQT5P10.pdf
FQT5P10TF
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.8A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC7905CTG description MC7900-D.PDF
MC7905CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
auf Bestellung 1546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
164+0.44 EUR
180+0.4 EUR
193+0.37 EUR
206+0.35 EUR
250+0.32 EUR
500+0.31 EUR
Mindestbestellmenge: 117
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NV24C512MUW3VTBG NV24C512MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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