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NCP51820AMNTWG ONSEMI ncp51820-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
Produkt ist nicht verfügbar
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HUF75339P3 HUF75339P3 ONSEMI HUF75339P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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43+1.7 EUR
47+1.53 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 43
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MC33161DR2G MC33161DR2G ONSEMI mc34161-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
auf Bestellung 708 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
87+0.83 EUR
90+0.8 EUR
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MC33172DR2G MC33172DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2 Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Integrated circuit features: low power
Kind of package: reel; tape
auf Bestellung 2165 Stücke:
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157+0.46 EUR
184+0.39 EUR
207+0.35 EUR
240+0.3 EUR
265+0.27 EUR
288+0.25 EUR
313+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 157
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MC33164P-5G MC33164P-5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1201 Stücke:
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109+0.66 EUR
148+0.49 EUR
151+0.47 EUR
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MC33161DG MC33161DG ONSEMI mc34161-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: tube
Number of channels: 2
auf Bestellung 136 Stücke:
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51+1.42 EUR
75+0.96 EUR
87+0.83 EUR
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FDD86250 FDD86250 ONSEMI fdd86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
42+1.73 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
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BD13810STU BD13810STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
151+0.48 EUR
167+0.43 EUR
188+0.38 EUR
480+0.34 EUR
Mindestbestellmenge: 151
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FDC6561AN FDC6561AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
100+0.72 EUR
145+0.49 EUR
169+0.42 EUR
250+0.35 EUR
500+0.31 EUR
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NDC7003P NDC7003P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
221+0.32 EUR
278+0.26 EUR
323+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 200
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FDC6321C FDC6321C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Gate charge: 2.3/1.5nC
On-state resistance: 720/1220mΩ
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
120+0.6 EUR
136+0.53 EUR
173+0.41 EUR
250+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 105
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FDC6333C FDC6333C ONSEMI FDC6333C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
90+0.8 EUR
115+0.63 EUR
138+0.52 EUR
500+0.32 EUR
750+0.29 EUR
1000+0.27 EUR
1500+0.26 EUR
Mindestbestellmenge: 82
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FDC658AP FDC658AP ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Features of semiconductor devices: logic level
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 8.1nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
auf Bestellung 2476 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
120+0.6 EUR
161+0.44 EUR
184+0.39 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 90
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MMSZ4685T1G MMSZ4685T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
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MMSZ5252BT1G MMSZ5252BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
981+0.073 EUR
1367+0.052 EUR
1593+0.045 EUR
1859+0.038 EUR
2294+0.031 EUR
2488+0.029 EUR
Mindestbestellmenge: 715
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NXH450N65L4Q2F2S1G ONSEMI nxh450n65l4q2f2s1g-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MC78M15CDTG MC78M15CDTG ONSEMI mc78m_ser.pdf description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
265+0.27 EUR
298+0.24 EUR
343+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 228
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MC78M15CTG MC78M15CTG ONSEMI mc78m_ser.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
152+0.47 EUR
167+0.43 EUR
178+0.4 EUR
190+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 109
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US1DFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVUS1DFA NRVUS1DFA ONSEMI US1MFA-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NUF2101MT1G NUF2101MT1G ONSEMI nuf2101m-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Number of channels: 3
Mounting: SMD
Application: USB
Semiconductor structure: bidirectional
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
164+0.44 EUR
180+0.4 EUR
194+0.37 EUR
209+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 136
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BZX79C4V7 BZX79C4V7 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Leakage current: 3µA
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
Manufacturer series: BZX79C
auf Bestellung 1362 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
685+0.1 EUR
1042+0.069 EUR
1254+0.057 EUR
1362+0.053 EUR
Mindestbestellmenge: 500
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FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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KA1H0165RTU ONSEMI ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M LM358M ONSEMI pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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GBU4K GBU4K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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LM2596DSADJR4G ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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LM2596TVADJG ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Micro8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MJ2955G ONSEMI 2n3055-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Kind of package: in-tray
Case: TO3; TO204
Mounting: THT
Type of transistor: PNP
Power dissipation: 115W
Current gain: 20...70
Collector current: 15A
Collector-emitter voltage: 60V
Frequency: 2.5MHz
Polarisation: bipolar
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MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
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SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA SS8550CTA ONSEMI ss8550-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
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NGTB40N120FL2WG NGTB40N120FL2WG ONSEMI ngtb40n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.07 EUR
10+7.26 EUR
Mindestbestellmenge: 9
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NTHL040N120M3S ONSEMI nthl040n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120M3S ONSEMI NVBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVBG040N120SC1 ONSEMI nvbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 ONSEMI nvhl040n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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LM358EDR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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LM358DMR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; Micro8; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Bandwidth: 1.1MHz
Produkt ist nicht verfügbar
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MMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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LM339DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM339EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP380N60 ONSEMI fcpf380n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCP380N60E ONSEMI FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60 ONSEMI fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60E ONSEMI FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NGTB15N120FL2WG NGTB15N120FL2WG ONSEMI ngtb15n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.58 EUR
11+6.82 EUR
30+6.02 EUR
Mindestbestellmenge: 10
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NGTB25N120FL3WG ONSEMI ngtb25n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Case: TO247-3
Produkt ist nicht verfügbar
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NSVBC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC33202DMR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Case: Micro8
Operating temperature: -40...105°C
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Input offset current: 100nA
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MC33202VDR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Case: SO8
Operating temperature: -55...125°C
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Input offset current: 200nA
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LM2902DTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; TSSOP14; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902EDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; TSSOP14; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MC33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
Produkt ist nicht verfügbar
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NVMTSC4D3N15MC ONSEMI nvmtsc4d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
Produkt ist nicht verfügbar
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NCP51820AMNTWG ncp51820-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
Produkt ist nicht verfügbar
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HUF75339P3 HUF75339P3.pdf
HUF75339P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
47+1.53 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 43
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MC33161DR2G mc34161-d.pdf
MC33161DR2G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
auf Bestellung 708 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
87+0.83 EUR
90+0.8 EUR
Mindestbestellmenge: 63
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MC33172DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F6A56FC0C3411C&compId=MC33172DG-DTE.PDF?ci_sign=75d33d92f5492c18acf8af66fca3207b27f497d2
MC33172DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Integrated circuit features: low power
Kind of package: reel; tape
auf Bestellung 2165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
184+0.39 EUR
207+0.35 EUR
240+0.3 EUR
265+0.27 EUR
288+0.25 EUR
313+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 157
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MC33164P-5G description pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab
MC33164P-5G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
148+0.49 EUR
151+0.47 EUR
Mindestbestellmenge: 109
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MC33161DG mc34161-d.pdf
MC33161DG
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: tube
Number of channels: 2
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
75+0.96 EUR
87+0.83 EUR
Mindestbestellmenge: 51
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FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
42+1.73 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BD13810STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
151+0.48 EUR
167+0.43 EUR
188+0.38 EUR
480+0.34 EUR
Mindestbestellmenge: 151
Im Einkaufswagen  Stück im Wert von  UAH
FDC6561AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493
FDC6561AN
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
100+0.72 EUR
145+0.49 EUR
169+0.42 EUR
250+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
NDC7003P pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63
NDC7003P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
221+0.32 EUR
278+0.26 EUR
323+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FDC6321C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b
FDC6321C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Gate charge: 2.3/1.5nC
On-state resistance: 720/1220mΩ
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
120+0.6 EUR
136+0.53 EUR
173+0.41 EUR
250+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
FDC6333C FDC6333C.pdf
FDC6333C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
90+0.8 EUR
115+0.63 EUR
138+0.52 EUR
500+0.32 EUR
750+0.29 EUR
1000+0.27 EUR
1500+0.26 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
FDC658AP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0
FDC658AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Features of semiconductor devices: logic level
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 8.1nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
auf Bestellung 2476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
120+0.6 EUR
161+0.44 EUR
184+0.39 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4685T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4685T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
Mindestbestellmenge: 585
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MMSZ5252BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5252BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
981+0.073 EUR
1367+0.052 EUR
1593+0.045 EUR
1859+0.038 EUR
2294+0.031 EUR
2488+0.029 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MC78M15CDTG description mc78m_ser.pdf
MC78M15CDTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
265+0.27 EUR
298+0.24 EUR
343+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
MC78M15CTG mc78m_ser.pdf
MC78M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
auf Bestellung 1190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
152+0.47 EUR
167+0.43 EUR
178+0.4 EUR
190+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
US1DFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1DFA US1MFA-D.PDF
NRVUS1DFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Case: SOD123F
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NUF2101MT1G nuf2101m-d.pdf
NUF2101MT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Number of channels: 3
Mounting: SMD
Application: USB
Semiconductor structure: bidirectional
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
164+0.44 EUR
180+0.4 EUR
194+0.37 EUR
209+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
BZX79C4V7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
BZX79C4V7
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Leakage current: 3µA
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
Manufacturer series: BZX79C
auf Bestellung 1362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.1 EUR
1042+0.069 EUR
1254+0.057 EUR
1362+0.053 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
KA1H0165RTU ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM358M pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3
LM358M
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBU4K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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LM2596DSADJR4G lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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LM2596TVADJG lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; Micro8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MJ2955G 2n3055-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Kind of package: in-tray
Case: TO3; TO204
Mounting: THT
Type of transistor: PNP
Power dissipation: 115W
Current gain: 20...70
Collector current: 15A
Collector-emitter voltage: 60V
Frequency: 2.5MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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MJD2955T4G mjd2955-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Type of transistor: PNP
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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MJE2955TG mje2955t-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Produkt ist nicht verfügbar
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SVD2955T4G ntd2955-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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SS8550CTA ss8550-d.pdf
SS8550CTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
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NGTB40N120FL2WG ngtb40n120fl2w-d.pdf
NGTB40N120FL2WG
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.07 EUR
10+7.26 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120M3S nthl040n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVBG040N120M3S NVBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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LM358EDR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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LM358DMR2G description lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; Micro8; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Bandwidth: 1.1MHz
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MMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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LM339DTBR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM339EDR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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FCP380N60 fcpf380n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60 fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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FCPF380N60E FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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NGTB15N120FL2WG ngtb15n120fl2w-d.pdf
NGTB15N120FL2WG
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.58 EUR
11+6.82 EUR
30+6.02 EUR
Mindestbestellmenge: 10
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NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Case: TO247-3
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NSVBC817-40WT1G bc817-40w-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MC33202DMR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Case: Micro8
Operating temperature: -40...105°C
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Input offset current: 100nA
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MC33202VDR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Case: SO8
Operating temperature: -55...125°C
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Input offset current: 200nA
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LM2902DTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; TSSOP14; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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LM2902EDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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LM2902VDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; SO14; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; TSSOP14; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad; 4
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MC33274ADTBR2G mc33272a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
Produkt ist nicht verfügbar
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NVMTSC4D3N15MC nvmtsc4d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
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