Technische Details FQPF19N20C ON Semiconductor
Description: ONSEMI - FQPF19N20C - Leistungs-MOSFET, n-Kanal, 200 V, 19 A, 0.14 ohm, TO-220F, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 200, Dauer-Drainstrom Id: 19, hazardous: false, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 43, Gate-Source-Schwellenspannung, max.: 4, euEccn: NLR, Verlustleistung: 43, Bauform - Transistor: TO-220F, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: QFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.14, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.14, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote FQPF19N20C nach Preis ab 1.19 EUR bis 4.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FQPF19N20C | ON Semiconductor |
 Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1107 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: QFET® |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | ON Semiconductor |
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | onsemi |
Description: MOSFET N-CH 200V 19A TO220F Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF19N20C | onsemi |
MOSFETs 200V N-Channel Advance Q-FET |
auf Bestellung 3756 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF19N20C |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 83+ | 2.14 EUR |
| 112+ | 1.56 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.19 EUR |
| FQPF19N20C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.88 EUR |
| 42+ | 2.06 EUR |
| 56+ | 1.54 EUR |
| 65+ | 1.31 EUR |
| FQPF19N20C |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 680 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 3.3 EUR |
| 101+ | 1.73 EUR |
| 109+ | 1.56 EUR |
| 500+ | 1.23 EUR |
| FQPF19N20C |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 19A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 200V 19A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.08 EUR |
| 50+ | 1.99 EUR |
| 100+ | 1.77 EUR |
| FQPF19N20C |
|
Hersteller: onsemi
MOSFETs 200V N-Channel Advance Q-FET
MOSFETs 200V N-Channel Advance Q-FET
auf Bestellung 3756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.77 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.07 EUR |