FQPF19N20C ON Semiconductor
| Anzahl | Preis |
|---|---|
| 340+ | 1.6 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.28 EUR |
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Technische Details FQPF19N20C ON Semiconductor
Description: MOSFET N-CH 200V 19A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FQPF19N20C nach Preis ab 0.94 EUR bis 3.54 EUR
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FQPF19N20C | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1647 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 999 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1655 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF19N20C | Hersteller : onsemi / Fairchild |
MOSFETs 200V N-Channel Advance Q-FET |
auf Bestellung 3238 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF19N20C | Hersteller : onsemi |
Description: MOSFET N-CH 200V 19A TO220F Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 125 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF19N20C | Hersteller : onsemi |
MOSFETs 200V N-Channel Advance Q-FET |
auf Bestellung 4219 Stücke: Lieferzeit 10-14 Tag (e) |
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