FQPF19N20C ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 324+ | 2.07 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
324 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQPF19N20C ON Semiconductor
Description: ONSEMI - FQPF19N20C - Leistungs-MOSFET, n-Kanal, 200 V, 19 A, 0.14 ohm, TO-220F, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 200, Dauer-Drainstrom Id: 19, hazardous: false, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 43, Gate-Source-Schwellenspannung, max.: 4, euEccn: NLR, Verlustleistung: 43, Bauform - Transistor: TO-220F, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: QFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.14, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.14, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote FQPF19N20C nach Preis ab 1.57 EUR bis 4.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQPF19N20C | onsemi |
 MOSFETs 200V N-Channel Advance Q-FET |
auf Bestellung 1859 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FQPF19N20C | onsemi |
Description: MOSFET N-CH 200V 19A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V |
auf Bestellung 391 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FQPF19N20C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQPF19N20C |
|
Hersteller: onsemi
MOSFETs 200V N-Channel Advance Q-FET
MOSFETs 200V N-Channel Advance Q-FET
auf Bestellung 1859 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.57 EUR |
| FQPF19N20C |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 19A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Description: MOSFET N-CH 200V 19A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.32 EUR |
| 10+ | 2.77 EUR |
| 50+ | 2.11 EUR |
| 100+ | 1.89 EUR |
| FQPF19N20C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)