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FDMC012N03 FDMC012N03 onsemi fdmc012n03-d.pdf Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
Produkt ist nicht verfügbar
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FDMC012N03 FDMC012N03 onsemi fdmc012n03-d.pdf Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
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J211-D74Z J211-D74Z onsemi J210-12%2CMMBFJ210-12.pdf Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 20mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 25 V
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J211-D74Z J211-D74Z onsemi J210-12%2CMMBFJ210-12.pdf Description: RF MOSFET JFET 25V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 20mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 25 V
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MBT3906DW1T1 MBT3906DW1T1 onsemi MBT%2CSMBT3906DW1T1.pdf Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Bulk
Part Status: Obsolete
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CPH3459-TL-W onsemi Description: MOSFET N-CH 200V 500MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 20 V
Produkt ist nicht verfügbar
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BS107AG BS107AG onsemi BS107-D.PDF Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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BS107ARL1 BS107ARL1 onsemi bs107-d.pdf Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BS107ARL1G BS107ARL1G onsemi BS107-D.PDF description Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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BS107G BS107G onsemi BS107-D.PDF description Description: MOSFET N-CH 200V 250MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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LA4708NF-MB-E onsemi SNYOS14936-1.pdf?t.download=true&u=5oefqw Description: AMPLIFIER
Part Status: Active
Supplier Device Package: 18-SIP
Max Output Power x Channels @ Load: 30W x 2 @ 2Ohm
Voltage - Supply: 9V ~ 16V
Operating Temperature: -35°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 2-Channel (Stereo)
Package / Case: 18-SIP
Packaging: Bulk
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CAT93C76BVI-GT3 CAT93C76BVI-GT3 onsemi CAT93C76B-D.PDF Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LC74761M-9006-E LC74761M-9006-E onsemi LC74761_M.pdf Description: IC DRVR DISPLAY LSI MFP30S
Operating Temperature: -30°C ~ 70°C
Mounting Type: Surface Mount
Display Type: LCD
Package / Case: 30-SOP (0.311", 7.90mm Width)
Packaging: Tube
Supplier Device Package: 30-MFP-SDJ
Digits or Characters: 288 Characters
Voltage - Supply: 4.5V ~ 5.5V
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BD675AS-ON BD675AS-ON onsemi FAIRS18550-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 45V 4A TO126-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FDG6303N_G FDG6303N_G onsemi Description: INTEGRATED CIRCUIT
Produkt ist nicht verfügbar
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FDG6303N-F169 FDG6303N-F169 onsemi FDG6303N.pdf Description: MOSFET 2N-CH 25V 0.5A SC70-6
Produkt ist nicht verfügbar
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MC33465N-20ATR MC33465N-20ATR onsemi ONSMS12475-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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1902+0.32 EUR
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MC33465N-30ATR MC33465N-30ATR onsemi ONSMS12475-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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MC33465N-27ATR MC33465N-27ATR onsemi ONSMS12475-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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MC33465N-32ATR MC33465N-32ATR onsemi ONSMS12475-1.pdf?t.download=true&u=5oefqw Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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2SK4101FS 2SK4101FS onsemi SNYOS14314-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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2SK4101FS-V-H 2SK4101FS-V-H onsemi SNYOS14314-1.pdf?t.download=true&u=5oefqw Description: NCH 10V DRIVE SERIES
Packaging: Bulk
Part Status: Active
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SB100-05J SB100-05J onsemi SNYOS10359-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
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SB10015M-TL-E onsemi ena0444-d.pdf Description: DIODE SCHOTTKY 15V 1A 3MCPH
Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 3-MCPH
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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SB1003M3-TL-E onsemi sb1003m3-d.pdf Description: DIODE SCHOTTKY 30V 1A 3MCPH
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: 3-MCPH
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 27pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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SB10-03A3-BT SB10-03A3-BT onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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SB10-03A3 SB10-03A3 onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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SB10-03A2-BT SB10-03A2-BT onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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SB10-03A2 SB10-03A2 onsemi SB10-03A2%2CA3.pdf Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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1402+0.4 EUR
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SB10-05A2-AT1 SB10-05A2-AT1 onsemi SB10-05A2%2CA3.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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SB10-05A3 SB10-05A3 onsemi SB10-05A2%2CA3.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Technology: Schottky
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1110+0.52 EUR
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SB10-05A2 SB10-05A2 onsemi SB10-05A2%2CA3.pdf Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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757+0.71 EUR
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TL431CPG TL431CPG onsemi tl431-d.pdf Description: IC VREF SHUNT ADJ 2.2% 8DIP
Packaging: Tube
Tolerance: ±2.2%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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FDS6982 FDS6982 onsemi FDS6982.pdf Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FDS6982 FDS6982 onsemi FDS6982.pdf Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDS6982S FDS6982S onsemi FDS6982S.pdf Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDS6982AS_G FDS6982AS_G onsemi Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVUS1GFA NRVUS1GFA onsemi us1mfa-d.pdf Description: DIODE STANDARD 400V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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NJVMJD50T4G NJVMJD50T4G onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
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NJVMJD50T4G NJVMJD50T4G onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
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1.5KE62ARL4G 1.5KE62ARL4G onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 53VWM 85VC
Packaging: Bulk
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.7A
Voltage - Reverse Standoff (Typ): 53V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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L78MR05R-E L78MR05R-E onsemi Description: IC REG LINEAR 5V 500MA TO220-5H
Protection Features: Over Current, Over Temperature
PSRR: 80dB ~ 77db (120Hz)
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-5H
Number of Regulators: 1
Voltage - Input (Max): 20V
Output Configuration: Positive
Operating Temperature: -30°C ~ 80°C
Current - Output: 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
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L78LR05B-FA-E onsemi Description: IC REG LINEAR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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L78LR05DJ-TL L78LR05DJ-TL onsemi CYPRS14016-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR VOLTAGE 5V/250M
Packaging: Bulk
Part Status: Active
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L78LR05B-TL-E onsemi Description: IC REG LINEAR
Packaging: Bulk
Part Status: Active
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L78LR05C-MA-E onsemi CYPRS09162-1.pdf?t.download=true&u=5oefqw Description: 5V VOLTAGE REGULATOR WITH RESET
Packaging: Bulk
Part Status: Active
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1.5KE16ARL4G 1.5KE16ARL4G onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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LM2904SNG LM2904SNG onsemi lm358s-d.pdf Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-PDIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Current - Supply: 500µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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1.5KE36AG 1.5KE36AG onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 30.8VWM 49.9VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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NCP1601ADR2 NCP1601ADR2 onsemi ncp1601a-d.pdf Description: IC PFC CTR CRM/TRANS 58KHZ 8SOIC
Current - Startup: 17 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Frequency - Switching: 58kHz
Voltage - Supply: 12.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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NCP1601ADR2G NCP1601ADR2G onsemi ncp1601a-d.pdf Description: IC PFC CTR CRM/TRANS 58KHZ 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Current - Startup: 17 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Frequency - Switching: 58kHz
Voltage - Supply: 12.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
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STR-NCL30160-1A-LED-GEVB STR-NCL30160-1A-LED-GEVB onsemi STR-NCL30160-1A-LED-GEVB_USER_GUIDE.PDF Description: EVAL BOARD FOR NCL30160
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
Contents: Board(s)
Produkt ist nicht verfügbar
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LM317MDT-001-ON onsemi Description: POSITIVE ADJUSTABLE REGULATOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SN74LS155D SN74LS155D onsemi Description: DECIMAL DECODER, LS SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN74LS155ML1 onsemi Description: 1-OF-4 DECODER
Packaging: Bulk
Part Status: Active
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SN74LS155MEL onsemi Description: DECODER
Packaging: Bulk
Part Status: Active
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MC74HC299F onsemi Description: SHIFT REGISTER
Packaging: Bulk
Part Status: Active
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LC786927W-04AP-LR-H onsemi Description: CD-DSP
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NRVUS1BFA NRVUS1BFA onsemi us1mfa-d.pdf Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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SA12CARL SA12CARL onsemi ONSMS15487-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
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FDMC012N03 fdmc012n03-d.pdf
FDMC012N03
Hersteller: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
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FDMC012N03 fdmc012n03-d.pdf
FDMC012N03
Hersteller: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
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J211-D74Z J210-12%2CMMBFJ210-12.pdf
J211-D74Z
Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 20mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 25 V
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J211-D74Z J210-12%2CMMBFJ210-12.pdf
J211-D74Z
Hersteller: onsemi
Description: RF MOSFET JFET 25V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current Rating (Amps): 20mA
Mounting Type: Through Hole
Configuration: N-Channel
Technology: JFET
Supplier Device Package: TO-92-3
Part Status: Active
Voltage - Rated: 25 V
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MBT3906DW1T1 MBT%2CSMBT3906DW1T1.pdf
MBT3906DW1T1
Hersteller: onsemi
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Bulk
Part Status: Obsolete
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CPH3459-TL-W
Hersteller: onsemi
Description: MOSFET N-CH 200V 500MA 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 20 V
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BS107AG BS107-D.PDF
BS107AG
Hersteller: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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BS107ARL1 bs107-d.pdf
BS107ARL1
Hersteller: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BS107ARL1G description BS107-D.PDF
BS107ARL1G
Hersteller: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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BS107G description BS107-D.PDF
BS107G
Hersteller: onsemi
Description: MOSFET N-CH 200V 250MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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LA4708NF-MB-E SNYOS14936-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: AMPLIFIER
Part Status: Active
Supplier Device Package: 18-SIP
Max Output Power x Channels @ Load: 30W x 2 @ 2Ohm
Voltage - Supply: 9V ~ 16V
Operating Temperature: -35°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 2-Channel (Stereo)
Package / Case: 18-SIP
Packaging: Bulk
Produkt ist nicht verfügbar
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CAT93C76BVI-GT3 CAT93C76B-D.PDF
CAT93C76BVI-GT3
Hersteller: onsemi
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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LC74761M-9006-E LC74761_M.pdf
LC74761M-9006-E
Hersteller: onsemi
Description: IC DRVR DISPLAY LSI MFP30S
Operating Temperature: -30°C ~ 70°C
Mounting Type: Surface Mount
Display Type: LCD
Package / Case: 30-SOP (0.311", 7.90mm Width)
Packaging: Tube
Supplier Device Package: 30-MFP-SDJ
Digits or Characters: 288 Characters
Voltage - Supply: 4.5V ~ 5.5V
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AnzahlPrivatkunde
126+4.37 EUR
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BD675AS-ON FAIRS18550-1.pdf?t.download=true&u=5oefqw
BD675AS-ON
Hersteller: onsemi
Description: TRANS NPN DARL 45V 4A TO126-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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FDG6303N_G
FDG6303N_G
Hersteller: onsemi
Description: INTEGRATED CIRCUIT
Produkt ist nicht verfügbar
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FDG6303N-F169 FDG6303N.pdf
FDG6303N-F169
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.5A SC70-6
Produkt ist nicht verfügbar
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MC33465N-20ATR ONSMS12475-1.pdf?t.download=true&u=5oefqw
MC33465N-20ATR
Hersteller: onsemi
Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1902+0.32 EUR
Mindestbestellmenge: 1902 Stücke
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MC33465N-30ATR ONSMS12475-1.pdf?t.download=true&u=5oefqw
MC33465N-30ATR
Hersteller: onsemi
Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1902+0.32 EUR
Mindestbestellmenge: 1902 Stücke
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MC33465N-27ATR ONSMS12475-1.pdf?t.download=true&u=5oefqw
MC33465N-27ATR
Hersteller: onsemi
Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
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1902+0.32 EUR
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MC33465N-32ATR ONSMS12475-1.pdf?t.download=true&u=5oefqw
MC33465N-32ATR
Hersteller: onsemi
Description: IC SUPERVISOR PWR SUP SUPPORT
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 33088 Stücke:
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AnzahlPrivatkunde
1902+0.32 EUR
Mindestbestellmenge: 1902 Stücke
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2SK4101FS SNYOS14314-1.pdf?t.download=true&u=5oefqw
2SK4101FS
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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AnzahlPrivatkunde
387+1.43 EUR
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2SK4101FS-V-H SNYOS14314-1.pdf?t.download=true&u=5oefqw
2SK4101FS-V-H
Hersteller: onsemi
Description: NCH 10V DRIVE SERIES
Packaging: Bulk
Part Status: Active
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164+3.36 EUR
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SB100-05J SNYOS10359-1.pdf?t.download=true&u=5oefqw
SB100-05J
Hersteller: onsemi
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
auf Bestellung 6797 Stücke:
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AnzahlPrivatkunde
1402+0.4 EUR
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SB10015M-TL-E ena0444-d.pdf
Hersteller: onsemi
Description: DIODE SCHOTTKY 15V 1A 3MCPH
Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 15 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 3-MCPH
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 17775 Stücke:
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2959+0.19 EUR
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SB1003M3-TL-E sb1003m3-d.pdf
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A 3MCPH
Current - Reverse Leakage @ Vr: 15 µA @ 16 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: 3-MCPH
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 27pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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2219+0.27 EUR
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SB10-03A3-BT SB10-03A2%2CA3.pdf
SB10-03A3-BT
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
auf Bestellung 1210000 Stücke:
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1567+0.37 EUR
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SB10-03A3 SB10-03A2%2CA3.pdf
SB10-03A3
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
1567+0.37 EUR
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SB10-03A2-BT SB10-03A2%2CA3.pdf
SB10-03A2-BT
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
auf Bestellung 108000 Stücke:
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AnzahlPrivatkunde
1402+0.4 EUR
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SB10-03A2 SB10-03A2%2CA3.pdf
SB10-03A2
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
auf Bestellung 9031 Stücke:
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AnzahlPrivatkunde
1402+0.4 EUR
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SB10-05A2-AT1 SB10-05A2%2CA3.pdf
SB10-05A2-AT1
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
757+0.71 EUR
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SB10-05A3 SB10-05A2%2CA3.pdf
SB10-05A3
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Technology: Schottky
auf Bestellung 25880 Stücke:
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1110+0.52 EUR
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SB10-05A2 SB10-05A2%2CA3.pdf
SB10-05A2
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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AnzahlPrivatkunde
757+0.71 EUR
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TL431CPG tl431-d.pdf
TL431CPG
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2.2% 8DIP
Packaging: Tube
Tolerance: ±2.2%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 19350 Stücke:
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AnzahlPrivatkunde
519+1.06 EUR
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FDS6982 FDS6982.pdf
FDS6982
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDS6982 FDS6982.pdf
FDS6982
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDS6982S FDS6982S.pdf
FDS6982S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDS6982AS_G
FDS6982AS_G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6.3A/8.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V, 16nC @ 5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.3A, 10V, 13.5mOhm @ 8.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NRVUS1GFA us1mfa-d.pdf
NRVUS1GFA
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NJVMJD50T4G mjd47-d.pdf
NJVMJD50T4G
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.54 EUR
5000+0.49 EUR
7500+0.46 EUR
12500+0.44 EUR
17500+0.43 EUR
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NJVMJD50T4G mjd47-d.pdf
NJVMJD50T4G
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 28255 Stücke:
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10+2.09 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.6 EUR
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1.5KE62ARL4G ONSMS21119-1.pdf?t.download=true&u=5oefqw
1.5KE62ARL4G
Hersteller: onsemi
Description: TVS DIODE 53VWM 85VC
Packaging: Bulk
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.7A
Voltage - Reverse Standoff (Typ): 53V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58.9V
Voltage - Clamping (Max) @ Ipp: 85V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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865+0.64 EUR
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L78MR05R-E
L78MR05R-E
Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA TO220-5H
Protection Features: Over Current, Over Temperature
PSRR: 80dB ~ 77db (120Hz)
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-5H
Number of Regulators: 1
Voltage - Input (Max): 20V
Output Configuration: Positive
Operating Temperature: -30°C ~ 80°C
Current - Output: 500mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
auf Bestellung 27517 Stücke:
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200+2.71 EUR
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L78LR05B-FA-E
Hersteller: onsemi
Description: IC REG LINEAR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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L78LR05DJ-TL CYPRS14016-1.pdf?t.download=true&u=5oefqw
L78LR05DJ-TL
Hersteller: onsemi
Description: IC REG LINEAR VOLTAGE 5V/250M
Packaging: Bulk
Part Status: Active
auf Bestellung 4900 Stücke:
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757+0.73 EUR
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L78LR05B-TL-E
Hersteller: onsemi
Description: IC REG LINEAR
Packaging: Bulk
Part Status: Active
auf Bestellung 10500 Stücke:
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478+1.13 EUR
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L78LR05C-MA-E CYPRS09162-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: 5V VOLTAGE REGULATOR WITH RESET
Packaging: Bulk
Part Status: Active
auf Bestellung 37286 Stücke:
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519+1.05 EUR
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1.5KE16ARL4G ONSMS21119-1.pdf?t.download=true&u=5oefqw
1.5KE16ARL4G
Hersteller: onsemi
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1990 Stücke:
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AnzahlPrivatkunde
956+0.57 EUR
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LM2904SNG lm358s-d.pdf
LM2904SNG
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 45 mA
Number of Circuits: 2
Supplier Device Package: 8-PDIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Current - Supply: 500µA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 978085 Stücke:
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1820+0.29 EUR
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1.5KE36AG ONSMS21119-1.pdf?t.download=true&u=5oefqw
1.5KE36AG
Hersteller: onsemi
Description: TVS DIODE 30.8VWM 49.9VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 14678 Stücke:
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AnzahlPrivatkunde
956+0.57 EUR
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NCP1601ADR2 ncp1601a-d.pdf
NCP1601ADR2
Hersteller: onsemi
Description: IC PFC CTR CRM/TRANS 58KHZ 8SOIC
Current - Startup: 17 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Frequency - Switching: 58kHz
Voltage - Supply: 12.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 2500 Stücke:
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701+0.83 EUR
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NCP1601ADR2G ncp1601a-d.pdf
NCP1601ADR2G
Hersteller: onsemi
Description: IC PFC CTR CRM/TRANS 58KHZ 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Current - Startup: 17 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Frequency - Switching: 58kHz
Voltage - Supply: 12.5V ~ 18V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
auf Bestellung 14111 Stücke:
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398+1.45 EUR
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STR-NCL30160-1A-LED-GEVB STR-NCL30160-1A-LED-GEVB_USER_GUIDE.PDF
STR-NCL30160-1A-LED-GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCL30160
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
Contents: Board(s)
Produkt ist nicht verfügbar
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LM317MDT-001-ON
Hersteller: onsemi
Description: POSITIVE ADJUSTABLE REGULATOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SN74LS155D
SN74LS155D
Hersteller: onsemi
Description: DECIMAL DECODER, LS SERIES
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN74LS155ML1
Hersteller: onsemi
Description: 1-OF-4 DECODER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SN74LS155MEL
Hersteller: onsemi
Description: DECODER
Packaging: Bulk
Part Status: Active
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
1137+0.48 EUR
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MC74HC299F
Hersteller: onsemi
Description: SHIFT REGISTER
Packaging: Bulk
Part Status: Active
auf Bestellung 4496 Stücke:
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AnzahlPrivatkunde
550+0.98 EUR
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LC786927W-04AP-LR-H
Hersteller: onsemi
Description: CD-DSP
auf Bestellung 5298 Stücke:
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90+7.35 EUR
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NRVUS1BFA us1mfa-d.pdf
NRVUS1BFA
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.24 EUR
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SA12CARL ONSMS15487-1.pdf?t.download=true&u=5oefqw
SA12CARL
Hersteller: onsemi
Description: TRANS VOLTAGE SUPPRESSOR DIODE
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5770+0.1 EUR
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