NJVMJD50T4G onsemi
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.54 EUR |
| 5000+ | 0.49 EUR |
| 7500+ | 0.46 EUR |
| 12500+ | 0.44 EUR |
| 17500+ | 0.43 EUR |
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Technische Details NJVMJD50T4G onsemi
Description: TRANS NPN 400V 1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Current - Collector Cutoff (Max): 200µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 1.56 W.
Weitere Produktangebote NJVMJD50T4G nach Preis ab 0.43 EUR bis 2.09 EUR
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NJVMJD50T4G | onsemi |
Bipolar Transistors - BJT BIP NPN 1A 400V TR |
auf Bestellung 16690 Stücke: Lieferzeit 10-14 Tag (e) |
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NJVMJD50T4G | onsemi |
Description: TRANS NPN 400V 1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.56 W |
auf Bestellung 28255 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NJVMJD50T4G |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 1A 400V TR
Bipolar Transistors - BJT BIP NPN 1A 400V TR
auf Bestellung 16690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.48 EUR |
| 5000+ | 0.43 EUR |
| NJVMJD50T4G |
|
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 28255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 16+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |