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1N3595TR | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
auf Bestellung 4721 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N3595 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Max. forward impulse current: 0.2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 3µs |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| KA5M0365RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.4A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -40...85°C Topology: flyback; forward On-state resistance: 4.5Ω Duty cycle factor: 72...82% Kind of package: tube Power: 75W Operating voltage: 9...27V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTGS5120PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.4W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Pulsed drain current: -20A Power dissipation: 1.4W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 111mΩ Mounting: SMD Gate charge: 18.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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80SQ045NRLG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
auf Bestellung 1170 Stücke: Lieferzeit 14-21 Tag (e) |
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LM7912CT | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -12V; 1A; TO220-3; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 1A Case: TO220-3 Mounting: THT Kind of package: tube Number of channels: 1 Heatsink thickness: 0.51...0.61mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP5; 2.5÷40VDC Type of integrated circuit: PMIC Mounting: SMD Case: TSOP5 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; TSOP6; 2.5÷40VDC Type of integrated circuit: PMIC Frequency: 1kHz Mounting: SMD Case: TSOP6 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 2.5...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74AC74DR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Trigger: positive-edge-triggered Kind of package: reel; tape Technology: TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74AC74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Trigger: positive-edge-triggered Kind of package: reel; tape Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2N6520TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 0.5A Current gain: 30...200 Frequency: 40...200MHz Collector-emitter voltage: 350V |
auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.6...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Interface: I2C Memory: 2kb EEPROM Kind of memory: EEPROM Mounting: SMD Type of integrated circuit: EEPROM memory Operating voltage: 1.7...5.5V Memory organisation: 256x8bit Case: SOT23-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CAV24C02WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV24C02YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP3063BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Output voltage: 1.25...40V DC Case: SO8 Mounting: SMD Number of channels: 1 Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Operating temperature: -40...125°C Output current: 1.5A Input voltage: 3...40V DC Operating voltage: 5...40V DC Frequency: 110...190kHz Topology: boost; buck; buck-boost |
auf Bestellung 2031 Stücke: Lieferzeit 14-21 Tag (e) |
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FODM3063 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 600V; triac; Mini-flat 4pin; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 3.75kV Output voltage: 600V Kind of output: triac Case: Mini-flat 4pin Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: FODM306x |
auf Bestellung 2104 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Max. forward voltage: 0.65V Load current: 15A x2 Max. load current: 30A Max. off-state voltage: 45V Semiconductor structure: common cathode; double |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1540G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm Load current: 15A Max. load current: 30A Max. off-state voltage: 0.4kV Max. forward impulse current: 200A |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.54V Load current: 1.5A Max. load current: 3A Max. off-state voltage: 40V |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF27P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2N3772G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 20A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 150W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 200kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MJ15001G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray Current gain: 25...150 Collector current: 15A Collector-emitter voltage: 140V Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Voltage supply range: 2.7...5V DC Input offset current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Voltage supply range: 2.7...5V DC Input offset current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Type of integrated circuit: digital Kind of integrated circuit: data selector Number of channels: 8 Number of inputs: 8 Technology: TTL Mounting: SMD Case: SO16 Family: HEF4000B Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of package: reel; tape |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14512BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Type of integrated circuit: digital Kind of integrated circuit: data selector Number of channels: 8 Number of inputs: 8 Technology: TTL Mounting: SMD Case: SO16 Family: HEF4000B Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FCPF16N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Kind of output: complementary; push-pull Case: SOIC16 Family: HC Trigger: positive-edge-triggered Mounting: SMD Operating temperature: -55...125°C Delay time: 225ns Number of channels: 1 Number of outputs: 1 Supply voltage: 2...6V Kind of integrated circuit: parallel in; shift register Number of inputs: 9 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of output: complementary; push-pull Case: TSSOP16 Family: HC Trigger: positive-edge-triggered Mounting: SMD Operating temperature: -55...125°C Delay time: 225ns Number of channels: 1 Number of outputs: 1 Supply voltage: 2...6V Kind of integrated circuit: parallel in; shift register Number of inputs: 9 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC165AMN2TWG | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Kind of output: complementary; push-pull Case: QFN16 Family: HC Trigger: positive-edge-triggered Mounting: SMD Operating temperature: -55...125°C Number of channels: 1 Number of outputs: 1 Supply voltage: 2...6V Kind of integrated circuit: parallel in; shift register Number of inputs: 9 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Kind of output: complementary Case: QFN16 Mounting: SMD Operating temperature: -55...125°C Delay time: 225ns Supply voltage: 4.5...5.5V Kind of integrated circuit: parallel in; shift register Number of inputs: 9 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDS3590 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 6.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB0190N807L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 190A Pulsed drain current: 1.44kA Power dissipation: 250W Case: D2PAK-6 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 249nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 778 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS6H800NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 224A Pulsed drain current: 900A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 3539 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 1885 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86101 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDMS86101A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Polarisation: unipolar Case: DFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD On-state resistance: 13mΩ Gate-source voltage: ±20V Drain current: 60A Drain-source voltage: 100V Power dissipation: 125W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NDUL03N150CG | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: TO3PF Mounting: THT Kind of channel: enhancement Kind of package: tube On-state resistance: 10.5Ω Drain current: 2.5A Gate-source voltage: ±30V Drain-source voltage: 1.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDP083N15A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 294W Case: TO220-3 Mounting: THT Kind of channel: enhancement Kind of package: tube On-state resistance: 8.3mΩ Drain current: 83A Gate-source voltage: ±20V Drain-source voltage: 150V |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTP7D3N15MC | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 166W Case: TO220-3 Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 53nC On-state resistance: 7.3mΩ Drain current: 101A Pulsed drain current: 574A Gate-source voltage: ±20V Drain-source voltage: 150V |
Produkt ist nicht verfügbar |
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MC14021BDR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Mounting: SMD Case: SO16 Operating temperature: -55...125°C Quiescent current: 600µA Supply voltage: 3...18V DC Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS Number of channels: 1 Family: HEF4000B |
auf Bestellung 1680 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049BDG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of integrated circuit: buffer; inverting Type of integrated circuit: digital Kind of package: tube Technology: CMOS Number of channels: 6 |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14082BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 4 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: dual; 2 Family: HEF4000B |
auf Bestellung 413 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14025BDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: NOR Kind of package: tube Technology: CMOS Number of channels: triple; 3 Family: HEF4000B |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC14013BDTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74ACT74DG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Manufacturer series: ACT |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74ACT74DTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Number of inputs: 4 Technology: TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: ACT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N3595TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
auf Bestellung 4721 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 782+ | 0.092 EUR |
| 1161+ | 0.062 EUR |
| 1489+ | 0.048 EUR |
| 1640+ | 0.044 EUR |
| 1N3595 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.035 EUR |
| KA5M0365RYDTU |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS5120PT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.4W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 111mΩ
Mounting: SMD
Gate charge: 18.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.4W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 111mΩ
Mounting: SMD
Gate charge: 18.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 80SQ045NRLG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 97+ | 0.74 EUR |
| 107+ | 0.67 EUR |
| 116+ | 0.62 EUR |
| 125+ | 0.57 EUR |
| 200+ | 0.56 EUR |
| LM7912CT |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 1A; TO220-3; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 1A
Case: TO220-3
Mounting: THT
Kind of package: tube
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4328ASNT1G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP5
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP4328BSNT1G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Frequency: 1kHz
Mounting: SMD
Case: TSOP6
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Type of integrated circuit: PMIC
Frequency: 1kHz
Mounting: SMD
Case: TSOP6
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 2.5...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC74DR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: TTL
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC74DTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34072ADR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34072AMTTBG |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34072VDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6520TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 385+ | 0.19 EUR |
| 572+ | 0.12 EUR |
| N24C02UDTG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N24C02UVTG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C02TDI-GT3A |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Interface: I2C
Memory: 2kb EEPROM
Kind of memory: EEPROM
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 256x8bit
Case: SOT23-5
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Interface: I2C
Memory: 2kb EEPROM
Kind of memory: EEPROM
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Memory organisation: 256x8bit
Case: SOT23-5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C02WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| CAV24C02YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NCP3063BDR2G | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Output voltage: 1.25...40V DC
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1.5A
Input voltage: 3...40V DC
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Output voltage: 1.25...40V DC
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1.5A
Input voltage: 3...40V DC
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
auf Bestellung 2031 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.24 EUR |
| 69+ | 1.04 EUR |
| 76+ | 0.94 EUR |
| 84+ | 0.86 EUR |
| FODM3063 |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; triac; Mini-flat 4pin; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac
Case: Mini-flat 4pin
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM306x
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; triac; Mini-flat 4pin; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac
Case: Mini-flat 4pin
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM306x
auf Bestellung 2104 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| MBRB2545CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.65V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 45V
Semiconductor structure: common cathode; double
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.45 EUR |
| 32+ | 2.3 EUR |
| 40+ | 1.79 EUR |
| 46+ | 1.56 EUR |
| 55+ | 1.32 EUR |
| 100+ | 1.27 EUR |
| MUR1540G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 200A
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| MBRS1540T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 192+ | 0.37 EUR |
| 215+ | 0.33 EUR |
| 235+ | 0.3 EUR |
| 256+ | 0.28 EUR |
| 286+ | 0.25 EUR |
| 500+ | 0.24 EUR |
| FQPF27P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.7 EUR |
| 37+ | 1.93 EUR |
| FQB27P06TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3772G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 20A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 20A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Produkt ist nicht verfügbar
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| MJ15001G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Produkt ist nicht verfügbar
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| LMV324DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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| LMV324DTBR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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| MC14512BDR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 173+ | 0.41 EUR |
| 193+ | 0.37 EUR |
| 221+ | 0.32 EUR |
| 250+ | 0.31 EUR |
| MC14512BDG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FCPF16N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C256YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| NV24C256MUW3VTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C256WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C256YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1246BLD065R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74HC165ADR2G-Q |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165ADTR2G-Q |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
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| MC74HC165AMN2TWG |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165AMN2TWG-Q |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS3590 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 71+ | 1.01 EUR |
| 87+ | 0.83 EUR |
| 117+ | 0.62 EUR |
| FDB0190N807L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.56 EUR |
| 15+ | 4.93 EUR |
| 16+ | 4.7 EUR |
| NVMFS6H800NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.63 EUR |
| 17+ | 4.42 EUR |
| KSC2383YTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 3539 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 191+ | 0.38 EUR |
| 261+ | 0.27 EUR |
| 298+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| KSC2383OTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1885 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 163+ | 0.44 EUR |
| 190+ | 0.38 EUR |
| 285+ | 0.25 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| FDMS86101 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101DC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDUL03N150CG |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP083N15A-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.01 EUR |
| 17+ | 4.46 EUR |
| 19+ | 3.96 EUR |
| NTP7D3N15MC |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC14021BDR2G |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
auf Bestellung 1680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 177+ | 0.4 EUR |
| 216+ | 0.33 EUR |
| 265+ | 0.27 EUR |
| MC14049BDG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: buffer; inverting
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: buffer; inverting
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 6
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 146+ | 0.49 EUR |
| 170+ | 0.42 EUR |
| 224+ | 0.32 EUR |
| 228+ | 0.31 EUR |
| MC14082BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 295+ | 0.24 EUR |
| 343+ | 0.21 EUR |
| MC14025BDG | ![]() |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| MC14013BDTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT74DG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| MC74ACT74DTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



























