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NL17SZ74USG NL17SZ74USG ONSEMI nl17sz74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2093 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
447+0.16 EUR
516+0.14 EUR
532+0.13 EUR
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MMBTA05LT1G MMBTA05LT1G ONSEMI MMBTA05L_06L.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6020 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
477+0.15 EUR
731+0.098 EUR
890+0.08 EUR
1348+0.053 EUR
1539+0.046 EUR
1651+0.043 EUR
3000+0.039 EUR
Mindestbestellmenge: 334 Stücke
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2N4403BU 2N4403BU ONSEMI 2N4403.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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1N4740A-T50A 1N4740A-T50A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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SS16T3G SS16T3G ONSEMI ss16-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 10227 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
575+0.12 EUR
642+0.11 EUR
705+0.1 EUR
1000+0.094 EUR
2500+0.086 EUR
5000+0.082 EUR
10000+0.077 EUR
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FDA59N30 FDA59N30 ONSEMI FDA59N30-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
17+4.32 EUR
20+3.73 EUR
30+3.13 EUR
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FQP8N80C FQP8N80C ONSEMI FQPF8N80C-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 ONSEMI fgy120t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Produkt ist nicht verfügbar
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AFGY120T65SPD ONSEMI AFGY120T65SPD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Produkt ist nicht verfügbar
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TIP29AG TIP29AG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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TIP29CG TIP29CG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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TIP29BG TIP29BG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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SBCP56-16T3G SBCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA56WT1G MMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
545+0.13 EUR
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SMMBTA56LT1G SMMBTA56LT1G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
253+0.28 EUR
324+0.22 EUR
353+0.2 EUR
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SMMBTA56LT3G ONSEMI mmbta55lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA56WT1G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA56WT3G ONSEMI mmbta56wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA56 MMBTA56 ONSEMI MMBTA56-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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BD243C BD243C ONSEMI BD243-FAI-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3 Stücke
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SB5100 SB5100 ONSEMI SB5100%20N0092%20REV.B.pdf FAIRS26624-1.pdf?t.download=true&u=5oefqw sb520.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJL3281AG MJL3281AG ONSEMI MJL3281AG.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Type of transistor: NPN
Case: TO264
Kind of package: tube
Collector current: 15A
Power dissipation: 200W
Collector-emitter voltage: 260V
Frequency: 30MHz
Polarisation: bipolar
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.63 EUR
25+3.37 EUR
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MJL1302AG MJL1302AG ONSEMI MJL3281A_MJL1302A.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Type of transistor: PNP
Case: TO264
Kind of package: tube
Collector current: 15A
Power dissipation: 200W
Collector-emitter voltage: 260V
Frequency: 30MHz
Polarisation: bipolar
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.92 EUR
25+4.48 EUR
Mindestbestellmenge: 13 Stücke
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BD682G BD682G ONSEMI BD682G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BC848BLT3G BC848BLT3G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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SPZT2222AT1G ONSEMI pzt2222at1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC74HC10ADR2G MC74HC10ADR2G ONSEMI MC74HC10A-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
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DF06S DF06S ONSEMI DF04S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1271 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
141+0.51 EUR
169+0.42 EUR
182+0.39 EUR
200+0.36 EUR
250+0.35 EUR
500+0.33 EUR
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1N5341BG 1N5341BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1N53xxB
Manufacturer series: 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 6.2V
Kind of package: bulk
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
180+0.4 EUR
214+0.33 EUR
334+0.21 EUR
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H11AA1M H11AA1M ONSEMI H11AA1M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
150+0.48 EUR
165+0.43 EUR
178+0.4 EUR
194+0.37 EUR
250+0.35 EUR
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BC857BLT3G BC857BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BDX53CG BDX53CG ONSEMI BDX53B-D.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
66+1.09 EUR
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MOC3023M MOC3023M ONSEMI MOC3020M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: without zero voltage crossing driver
Trigger current: 5mA
Output voltage: 400V
Insulation voltage: 5.3kV
Manufacturer series: MOC302XM
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.9 EUR
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FDD8447L FDD8447L ONSEMI FDD8447L.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
72+1 EUR
83+0.87 EUR
121+0.59 EUR
141+0.51 EUR
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1N5346BRLG 1N5346BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 5867 Stücke:
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162+0.44 EUR
178+0.4 EUR
199+0.36 EUR
307+0.23 EUR
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MJD45H11T4G MJD45H11T4G ONSEMI MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
90+0.8 EUR
106+0.68 EUR
130+0.55 EUR
149+0.48 EUR
200+0.43 EUR
500+0.38 EUR
1000+0.35 EUR
2500+0.34 EUR
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MJD45H11G MJD45H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
auf Bestellung 1012 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
61+1.17 EUR
81+0.89 EUR
91+0.79 EUR
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MJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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MJD45H11-1G MJD45H11-1G ONSEMI MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
auf Bestellung 225 Stücke:
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68+1.06 EUR
81+0.89 EUR
90+0.8 EUR
97+0.74 EUR
150+0.7 EUR
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NJVMJD45H11G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD45H11T4G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NTMFS024N06CT1G ONSEMI NTMFS024N06C-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1G ONSEMI nvmfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74AC573DWG MC74AC573DWG ONSEMI mc74ac573-d.pdf Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Family: AC
auf Bestellung 764 Stücke:
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64+1.13 EUR
89+0.81 EUR
101+0.71 EUR
109+0.66 EUR
128+0.56 EUR
190+0.54 EUR
266+0.52 EUR
532+0.5 EUR
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MMBT5401LT3G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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MMBT5401 MMBT5401 ONSEMI MMBT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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KSD1692YS KSD1692YS ONSEMI KSD1692YS.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 15W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 4000...12000
Kind of package: tube
Polarisation: bipolar
Kind of transistor: Darlington
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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1N4006FFG 1N4006FFG ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
auf Bestellung 3614 Stücke:
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3206+0.022 EUR
3614+0.02 EUR
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MBRB20100CTT4G MBRB20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 20A
auf Bestellung 333 Stücke:
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38+1.9 EUR
41+1.76 EUR
49+1.49 EUR
53+1.37 EUR
58+1.24 EUR
100+1.17 EUR
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MC14014BDG MC14014BDG ONSEMI MC14014B-D.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of integrated circuit: 8bit; shift register
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
auf Bestellung 425 Stücke:
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143+0.5 EUR
201+0.36 EUR
224+0.32 EUR
240+0.3 EUR
257+0.28 EUR
268+0.27 EUR
288+0.25 EUR
Mindestbestellmenge: 143 Stücke
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1N5356BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5401RLG 1N5401RLG ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 230 Stücke:
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209+0.34 EUR
230+0.31 EUR
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1N5401G 1N5401G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 427 Stücke:
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193+0.37 EUR
277+0.26 EUR
385+0.19 EUR
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BC847BM3T5G BC847BM3T5G ONSEMI BC847BM3-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 7920 Stücke:
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250+0.29 EUR
302+0.24 EUR
427+0.17 EUR
515+0.14 EUR
663+0.11 EUR
794+0.09 EUR
1000+0.076 EUR
5000+0.055 EUR
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FCB070N65S3FCB070N65S3
FCB070N65S3FCB070N65S3
 FCB070N65S3 ONSEMI fcb070n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 44A
Drain-source voltage: 650V
Power dissipation: 312W
auf Bestellung 437 Stücke:
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10+7.61 EUR
14+5.15 EUR
100+5.13 EUR
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LM833DR2G LM833DR2G ONSEMI LM833DR2G.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
253+0.28 EUR
290+0.25 EUR
353+0.2 EUR
443+0.16 EUR
477+0.15 EUR
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MC14584BDG MC14584BDG ONSEMI MC14584BDG.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
auf Bestellung 5 Stücke:
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5+14.3 EUR
Mindestbestellmenge: 5 Stücke
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NL17SZ74USG nl17sz74-d.pdf
NL17SZ74USG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2093 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
447+0.16 EUR
516+0.14 EUR
532+0.13 EUR
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MMBTA05LT1G description MMBTA05L_06L.pdf
MMBTA05LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6020 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
477+0.15 EUR
731+0.098 EUR
890+0.08 EUR
1348+0.053 EUR
1539+0.046 EUR
1651+0.043 EUR
3000+0.039 EUR
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2N4403BU 2N4403.pdf
2N4403BU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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1N4740A-T50A 1N47xxA.PDF
1N4740A-T50A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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SS16T3G ss16-d.pdf
SS16T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 10227 Stücke:
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AnzahlPreis
500+0.14 EUR
575+0.12 EUR
642+0.11 EUR
705+0.1 EUR
1000+0.094 EUR
2500+0.086 EUR
5000+0.082 EUR
10000+0.077 EUR
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FDA59N30 FDA59N30-D.pdf
FDA59N30
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
14+5.29 EUR
17+4.32 EUR
20+3.73 EUR
30+3.13 EUR
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FQP8N80C FQPF8N80C-D.pdf
FQP8N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 fgy120t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 378A
Mounting: THT
Gate charge: 162nC
Kind of package: tube
Produkt ist nicht verfügbar
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AFGY120T65SPD AFGY120T65SPD-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Produkt ist nicht verfügbar
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TIP29AG TIP29A-C_TIP30A-C.pdf
TIP29AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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TIP29CG TIP29A-C_TIP30A-C.pdf
TIP29CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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TIP29BG TIP29A-C_TIP30A-C.pdf
TIP29BG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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SBCP56-16T3G bcp56t1-d.pdf
SBCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA56WT1G mmbta56wt1-d.pdf
MMBTA56WT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 545 Stücke:
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AnzahlPreis
417+0.17 EUR
545+0.13 EUR
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SMMBTA56LT1G mmbta55lt1-d.pdf
SMMBTA56LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
253+0.28 EUR
324+0.22 EUR
353+0.2 EUR
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SMMBTA56LT3G mmbta55lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA56WT1G mmbta56wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA56WT3G mmbta56wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA56 MMBTA56-DTE.pdf
MMBTA56
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD243C BD243-FAI-DTE.pdf
BD243C
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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SB5100 SB5100%20N0092%20REV.B.pdf FAIRS26624-1.pdf?t.download=true&u=5oefqw sb520.pdf
SB5100
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJL3281AG MJL3281AG.PDF
MJL3281AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Type of transistor: NPN
Case: TO264
Kind of package: tube
Collector current: 15A
Power dissipation: 200W
Collector-emitter voltage: 260V
Frequency: 30MHz
Polarisation: bipolar
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
13+5.63 EUR
25+3.37 EUR
Mindestbestellmenge: 13 Stücke
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MJL1302AG MJL3281A_MJL1302A.PDF
MJL1302AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Type of transistor: PNP
Case: TO264
Kind of package: tube
Collector current: 15A
Power dissipation: 200W
Collector-emitter voltage: 260V
Frequency: 30MHz
Polarisation: bipolar
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
13+5.92 EUR
25+4.48 EUR
Mindestbestellmenge: 13 Stücke
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BD682G BD682G.PDF
BD682G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BC848BLT3G BC846ALT1G.PDF
BC848BLT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SPZT2222AT1G pzt2222at1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC74HC10ADR2G MC74HC10A-D.pdf
MC74HC10ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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DF06S DF04S.pdf
DF06S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1271 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
93+0.77 EUR
141+0.51 EUR
169+0.42 EUR
182+0.39 EUR
200+0.36 EUR
250+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 93 Stücke
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1N5341BG 1N53xx.PDF
1N5341BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1N53xxB
Manufacturer series: 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 6.2V
Kind of package: bulk
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
120+0.6 EUR
180+0.4 EUR
214+0.33 EUR
334+0.21 EUR
Mindestbestellmenge: 120 Stücke
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H11AA1M H11AA1M.pdf
H11AA1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
87+0.83 EUR
150+0.48 EUR
165+0.43 EUR
178+0.4 EUR
194+0.37 EUR
250+0.35 EUR
Mindestbestellmenge: 87 Stücke
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BC857BLT3G BC856_7_8.PDF
BC857BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BDX53CG BDX53B-D.pdf
BDX53CG
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
54+1.33 EUR
66+1.09 EUR
Mindestbestellmenge: 54 Stücke
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MOC3023M MOC3020M-ONS.PDF
MOC3023M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: without zero voltage crossing driver
Trigger current: 5mA
Output voltage: 400V
Insulation voltage: 5.3kV
Manufacturer series: MOC302XM
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
79+0.9 EUR
Mindestbestellmenge: 79 Stücke
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FDD8447L description FDD8447L.pdf
FDD8447L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
59+1.22 EUR
72+1 EUR
83+0.87 EUR
121+0.59 EUR
141+0.51 EUR
Mindestbestellmenge: 59 Stücke
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1N5346BRLG description 1N53xx.PDF
1N5346BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 5867 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
162+0.44 EUR
178+0.4 EUR
199+0.36 EUR
307+0.23 EUR
Mindestbestellmenge: 162 Stücke
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MJD45H11T4G description MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF
MJD45H11T4G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
auf Bestellung 2958 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
57+1.26 EUR
90+0.8 EUR
106+0.68 EUR
130+0.55 EUR
149+0.48 EUR
200+0.43 EUR
500+0.38 EUR
1000+0.35 EUR
2500+0.34 EUR
Mindestbestellmenge: 57 Stücke
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MJD45H11G description MJD44H11_MJD45H11.PDF
MJD45H11G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
auf Bestellung 1012 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
51+1.42 EUR
61+1.17 EUR
81+0.89 EUR
91+0.79 EUR
Mindestbestellmenge: 51 Stücke
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MJD45H11RLG mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJD45H11-1G description MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF
MJD45H11-1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
68+1.06 EUR
81+0.89 EUR
90+0.8 EUR
97+0.74 EUR
150+0.7 EUR
Mindestbestellmenge: 68 Stücke
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NJVMJD45H11G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11RLG mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11T4G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NTMFS024N06CT1G NTMFS024N06C-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFD024N06CT1G nvmfd024n06c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS024N06CT1G nvmfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74AC573DWG mc74ac573-d.pdf
MC74AC573DWG
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Family: AC
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
64+1.13 EUR
89+0.81 EUR
101+0.71 EUR
109+0.66 EUR
128+0.56 EUR
190+0.54 EUR
266+0.52 EUR
532+0.5 EUR
Mindestbestellmenge: 64 Stücke
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MMBT5401LT3G mmbt5401lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MMBT5401 MMBT5401.pdf
MMBT5401
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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KSD1692YS KSD1692YS.pdf
KSD1692YS
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 15W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 4000...12000
Kind of package: tube
Polarisation: bipolar
Kind of transistor: Darlington
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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1N4006FFG 1N4001-D.PDF
1N4006FFG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
auf Bestellung 3614 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3206+0.022 EUR
3614+0.02 EUR
Mindestbestellmenge: 3206 Stücke
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MBRB20100CTT4G mbrb20100ct-d.pdf
MBRB20100CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 20A
auf Bestellung 333 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
38+1.9 EUR
41+1.76 EUR
49+1.49 EUR
53+1.37 EUR
58+1.24 EUR
100+1.17 EUR
Mindestbestellmenge: 38 Stücke
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MC14014BDG MC14014B-D.pdf
MC14014BDG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of integrated circuit: 8bit; shift register
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
143+0.5 EUR
201+0.36 EUR
224+0.32 EUR
240+0.3 EUR
257+0.28 EUR
268+0.27 EUR
288+0.25 EUR
Mindestbestellmenge: 143 Stücke
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1N5356BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5401RLG 1N540x.PDF
1N5401RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; reel,tape; Ifsm: 200A; DO27
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 230 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
209+0.34 EUR
230+0.31 EUR
Mindestbestellmenge: 209 Stücke
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1N5401G 1N540x.PDF
1N5401G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
277+0.26 EUR
385+0.19 EUR
Mindestbestellmenge: 193 Stücke
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BC847BM3T5G BC847BM3-D.PDF
BC847BM3T5G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 7920 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
250+0.29 EUR
302+0.24 EUR
427+0.17 EUR
515+0.14 EUR
663+0.11 EUR
794+0.09 EUR
1000+0.076 EUR
5000+0.055 EUR
Mindestbestellmenge: 250 Stücke
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FCB070N65S3 fcb070n65s3-d.pdf
FCB070N65S3FCB070N65S3
FCB070N65S3FCB070N65S3
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 44A
Drain-source voltage: 650V
Power dissipation: 312W
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10+7.61 EUR
14+5.15 EUR
100+5.13 EUR
Mindestbestellmenge: 10 Stücke
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LM833DR2G LM833DR2G.PDF
LM833DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; ±5÷18VDC,10÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
218+0.33 EUR
253+0.28 EUR
290+0.25 EUR
353+0.2 EUR
443+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 218 Stücke
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MC14584BDG MC14584BDG.PDF
MC14584BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
5+14.3 EUR
Mindestbestellmenge: 5 Stücke
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