Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142640) > Seite 2317 nach 2378

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2312 2313 2314 2315 2316 2317 2318 2319 2320 2321 2322 2370 2378  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NUP4114HMR6T1G NUP4114HMR6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9C8BAB0A75BF00C7&compId=NUP4114.PDF?ci_sign=5d35c610d832eaa422109862e6a524956e4aaed1 Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114UPXV6T2G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114UPXV6T1G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP4114HMR6T1G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP4114UCLW1T2G ONSEMI nup4114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20CTM FQD10N20CTM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197461A92B30259&compId=FQD10N20C.pdf?ci_sign=c62d5bc9c879fb19f5c2d4ab2f91ba800650fb68 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DG MC74AC125DG ONSEMI MC74AC125DG.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
161+0.44 EUR
177+0.4 EUR
191+0.37 EUR
203+0.36 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DTR2G MC74AC125DTR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
161+0.45 EUR
183+0.39 EUR
224+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC245DTG MC74AC245DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
88+0.82 EUR
106+0.67 EUR
122+0.59 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BAT54T1G BAT54T1G ONSEMI bat54t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
1250+0.057 EUR
1902+0.038 EUR
2203+0.032 EUR
2451+0.029 EUR
2703+0.026 EUR
3087+0.023 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
SZESD5B5.0ST1G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMBA14 FMBA14 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
1191+0.06 EUR
Mindestbestellmenge: 1191
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4V7T1G MMSZ4V7T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 2020 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1000+0.072 EUR
1367+0.052 EUR
1588+0.045 EUR
2020+0.036 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
FDN306P FDN306P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3944 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
217+0.33 EUR
290+0.25 EUR
332+0.22 EUR
394+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
MBRS130LT3G MBRS130LT3G ONSEMI mbrs130.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 2713 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
304+0.24 EUR
385+0.19 EUR
432+0.17 EUR
500+0.14 EUR
556+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDV303N FDV303N ONSEMI pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14176 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
472+0.15 EUR
671+0.11 EUR
779+0.092 EUR
1051+0.068 EUR
1166+0.061 EUR
1500+0.058 EUR
3000+0.054 EUR
6000+0.051 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
US1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1GFA NRVUS1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6N139SM 6N139SM ONSEMI 6N139SM-FAI.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
84+0.86 EUR
95+0.76 EUR
100+0.73 EUR
500+0.65 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 ONSEMI fdbl0150n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCD7N60TM-WS ONSEMI fcd7n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCI7N60 ONSEMI fci7n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH47N60F-F133
+1
 		FCH47N60F-F133 ONSEMI fch47n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.2 EUR
10+11.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDC3612 FDC3612 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2982 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
143+0.5 EUR
172+0.42 EUR
189+0.38 EUR
250+0.34 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0240N100 ONSEMI fdbl0240n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3843BVD1R2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3843BVDR2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB0260N1007L ONSEMI fdb0260n1007l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0260N100 ONSEMI fdbl0260n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCD620N60ZF ONSEMI fcd620n60zf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 3
Kind of gate: NOR
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
167+0.43 EUR
185+0.39 EUR
196+0.37 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
J176-D74Z J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
auf Bestellung 1797 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
232+0.31 EUR
277+0.26 EUR
360+0.2 EUR
500+0.16 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
TIP42AG TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
54+1.35 EUR
81+0.89 EUR
100+0.72 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0110N60 ONSEMI fdbl0110n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858CLT1G BC858CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
848+0.084 EUR
1220+0.059 EUR
1441+0.05 EUR
2065+0.034 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BC858BLT3G BC858BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S ONSEMI NTBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD18N20LZ ONSEMI fdd18n20lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F20NXT5G ONSEMI nsr05f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245MTC 74AC245MTC ONSEMI 74ACT245-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245MTCX 74AC245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245SCX 74AC245SCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS; TTL
Case: SO20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC245DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Manufacturer series: AC
Family: AC
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DY SI4435DY ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1682 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
72+1 EUR
94+0.76 EUR
103+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
NTD2955T4G NTD2955T4G ONSEMI ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
74+0.97 EUR
84+0.86 EUR
100+0.72 EUR
250+0.65 EUR
500+0.6 EUR
1000+0.55 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
MMBF5484 MMBF5484 ONSEMI mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2872 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
506+0.14 EUR
544+0.13 EUR
633+0.11 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MCH3914-7-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCH3914-8-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114HMR6T1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9C8BAB0A75BF00C7&compId=NUP4114.PDF?ci_sign=5d35c610d832eaa422109862e6a524956e4aaed1
NUP4114HMR6T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Leakage current: 1µA
Version: ESD
Max. forward impulse current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114UPXV6T2G nup4114-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114UPXV6T1G nup4114-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; reel,tape
Type of diode: TVS array
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP4114HMR6T1G nup4114-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP4114UCLW1T2G nup4114-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20CTM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197461A92B30259&compId=FQD10N20C.pdf?ci_sign=c62d5bc9c879fb19f5c2d4ab2f91ba800650fb68
FQD10N20CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DG MC74AC125DG.PDF
MC74AC125DG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
161+0.44 EUR
177+0.4 EUR
191+0.37 EUR
203+0.36 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DTR2G mc74ac125-d.pdf
MC74AC125DTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
161+0.45 EUR
183+0.39 EUR
224+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC245DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c
MC74AC245DTG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
88+0.82 EUR
106+0.67 EUR
122+0.59 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BAT54T1G bat54t1-d.pdf
BAT54T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
1250+0.057 EUR
1902+0.038 EUR
2203+0.032 EUR
2451+0.029 EUR
2703+0.026 EUR
3087+0.023 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
SZESD5B5.0ST1G esd5b5.0st1-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMBA14 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff
FMBA14
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN x2
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1191+0.06 EUR
Mindestbestellmenge: 1191
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4V7T1G MMSZxxxT1G.PDF
MMSZ4V7T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 2020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1000+0.072 EUR
1367+0.052 EUR
1588+0.045 EUR
2020+0.036 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
FDN306P pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85
FDN306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3944 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
217+0.33 EUR
290+0.25 EUR
332+0.22 EUR
394+0.18 EUR
500+0.16 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
MBRS130LT3G mbrs130.pdf
MBRS130LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 2713 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
304+0.24 EUR
385+0.19 EUR
432+0.17 EUR
500+0.14 EUR
556+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDV303N pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85
FDV303N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
472+0.15 EUR
671+0.11 EUR
779+0.092 EUR
1051+0.068 EUR
1166+0.061 EUR
1500+0.058 EUR
3000+0.054 EUR
6000+0.051 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
US1GFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1GFA us1mfa-d.pdf
NRVUS1GFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6N139SM 6N139SM-FAI.pdf
6N139SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
84+0.86 EUR
95+0.76 EUR
100+0.73 EUR
500+0.65 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCD7N60TM-WS fcd7n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCI7N60 fci7n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH47N60F-F133 fch47n60f-d.pdf
FCH47N60F-F133
+1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.2 EUR
10+11.68 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDC3612 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f
FDC3612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
143+0.5 EUR
172+0.42 EUR
189+0.38 EUR
250+0.34 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0240N100 fdbl0240n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3843BVD1R2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3843BVDR2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB0260N1007L fdb0260n1007l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0260N100 fdbl0260n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT199N60 fcmt199n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCD620N60ZF fcd620n60zf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDB5060L ndb5060l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 3
Kind of gate: NOR
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
167+0.43 EUR
185+0.39 EUR
196+0.37 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
FCA20N60-F109 fca20n60_f109-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 fcmt360n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: PQFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD5N50NZTM fdd5n50nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
J176-D74Z j175-d.pdf
J176-D74Z
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
auf Bestellung 1797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
232+0.31 EUR
277+0.26 EUR
360+0.2 EUR
500+0.16 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
TIP42AG tip41a-d.pdf
TIP42AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
54+1.35 EUR
81+0.89 EUR
100+0.72 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
FCD5N60TM-WS fcu5n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0110N60 fdbl0110n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
848+0.084 EUR
1220+0.059 EUR
1441+0.05 EUR
2065+0.034 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
BC858BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0210N80 fdbl0210n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTBG040N120M3S NTBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV33035DWR2G mc33035-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD18N20LZ fdd18n20lz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F20NXT5G nsr05f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245MTC description 74ACT245-D.pdf
74AC245MTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245MTCX 74ACT245-D.pdf
74AC245MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS
Case: TSSOP20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AC245SCX 74ACT245-D.pdf
74AC245SCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Manufacturer series: AC
Technology: CMOS; TTL
Case: SO20
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC245DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Manufacturer series: AC
Family: AC
Technology: CMOS
Case: TSSOP20
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4435DY pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c
SI4435DY
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
72+1 EUR
94+0.76 EUR
103+0.7 EUR
500+0.66 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
NTD2955T4G ntd2955-d.pdf 546ddeaeab93c794f84a448873c3157d.pdf
NTD2955T4G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
74+0.97 EUR
84+0.86 EUR
100+0.72 EUR
250+0.65 EUR
500+0.6 EUR
1000+0.55 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
MMBF5484 mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw
MMBF5484
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2872 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
506+0.14 EUR
544+0.13 EUR
633+0.11 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MCH3914-7-TL-H ena1511-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MCH3914-8-TL-H ena1511-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2312 2313 2314 2315 2316 2317 2318 2319 2320 2321 2322 2370 2378  [ Nächste Seite >> ]