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Technische Details NDUL03N150CG ON Semiconductor
Description: MOSFET N-CH 1500V 2.5A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P(L), Power Dissipation (Max): 3W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PL, Packaging: Tube.
Weitere Produktangebote NDUL03N150CG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NDUL03N150CG | onsemi |
 Description: MOSFET N-CH 1500V 2.5A TO3PInput Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3P(L) Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDUL03N150CG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: TO3PF Mounting: THT Kind of channel: enhancement Kind of package: tube On-state resistance: 10.5Ω Drain current: 2.5A Gate-source voltage: ±30V Drain-source voltage: 1.5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NDUL03N150CG |
|
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDUL03N150CG |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH