NDUL03N150CG ON Semiconductor

Description: MOSFET N-CH 1500V 2.5A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 1500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P(L), Power Dissipation (Max): 3W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PL, Packaging: Tube.