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N93C66BT3ETAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT93C66VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV93C66VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC817-40WT1G BC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1474 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
569+0.13 EUR
650+0.11 EUR
926+0.077 EUR
1087+0.066 EUR
1474+0.049 EUR
Mindestbestellmenge: 455
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SBC817-40LT1G SBC817-40LT1G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
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SBC817-40LT3G SBC817-40LT3G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NV24C08DWVLT3G ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C08MUW3VLTBG ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCP56T3G BCP56T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846CLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
1080+0.066 EUR
Mindestbestellmenge: 1080
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NTB25P06T4G ONSEMI ntb25p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G BAT54AWT1G ONSEMI BAT54AW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 5906 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
2174+0.033 EUR
Mindestbestellmenge: 715
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SBAT54ALT1G SBAT54ALT1G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54ALT3G SBAT54ALT3G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G SBAT54AWT1G ONSEMI bat54awt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BC857CWT1G BC857CWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
Mindestbestellmenge: 167
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SBC857CLT1G SBC857CLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NV24C04DTVLT3G ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C04MUW3VLTBG ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC856BWT1G BC856BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5926 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
596+0.12 EUR
736+0.097 EUR
1289+0.055 EUR
1613+0.044 EUR
2841+0.025 EUR
2924+0.024 EUR
Mindestbestellmenge: 455
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SBC856BDW1T1G SBC856BDW1T1G ONSEMI BC85xBDW1T1.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
650+0.11 EUR
999+0.072 EUR
1279+0.056 EUR
1409+0.051 EUR
Mindestbestellmenge: 385
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NCS20071SN2T1G NCS20071SN2T1G ONSEMI NCS20071_2_4.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape; Ch: single
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Bandwidth: 3MHz
Type of integrated circuit: operational amplifier
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
157+0.46 EUR
170+0.42 EUR
Mindestbestellmenge: 112
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NV24C16DTVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16DWVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16SNVLT3G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16UVLT2G ONSEMI NV24C16LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA64LT1G MMBTA64LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
auf Bestellung 749 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
562+0.13 EUR
749+0.096 EUR
Mindestbestellmenge: 455
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BZX84C15LT1G BZX84C15LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 3217 Stücke:
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625+0.11 EUR
1042+0.069 EUR
1645+0.043 EUR
2000+0.036 EUR
2995+0.024 EUR
3217+0.023 EUR
Mindestbestellmenge: 625
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FQD3P50TM FQD3P50TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
61+1.19 EUR
68+1.06 EUR
74+0.97 EUR
100+0.89 EUR
250+0.87 EUR
Mindestbestellmenge: 43
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1N5361BG 1N5361BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 27V
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
199+0.36 EUR
227+0.32 EUR
304+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 152
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MMBT5087LT1G MMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Polarisation: bipolar
auf Bestellung 2008 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
544+0.13 EUR
802+0.089 EUR
958+0.075 EUR
1429+0.05 EUR
1667+0.043 EUR
1819+0.039 EUR
Mindestbestellmenge: 417
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BC857BWT1G
+1
 		BC857BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
390+0.19 EUR
Mindestbestellmenge: 390
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FDMS3660S FDMS3660S ONSEMI fdms3660s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2589 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
44+1.66 EUR
46+1.59 EUR
100+1.44 EUR
Mindestbestellmenge: 40
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FDMS7608S ONSEMI fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: Power56
Polarisation: unipolar
Gate charge: 24/30nC
On-state resistance: 13.9/8.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain current: 22/30A
Drain-source voltage: 30/30V
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MC74VHC541DTG MC74VHC541DTG ONSEMI mc74vhc541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
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MC74VHC541DTR2G MC74VHC541DTR2G ONSEMI mc74vhc541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA4C0D3&compId=MC74VHC541-D.pdf?ci_sign=2962d32f628a84520095d1f388780c617e381cb3 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74AC253DR2G MC74AC253DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C7E0D3&compId=MC74AC253-D.pdf?ci_sign=7b905c43d925418847c9051cddbafbb1f926b31b Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2...6V DC
Number of inputs: 5
Kind of output: 3-state
Kind of integrated circuit: 3-state; multiplexer
Produkt ist nicht verfügbar
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FQP47P06 FQP47P06 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199E4B6843E6259&compId=FQP47P06.pdf?ci_sign=8b76fd8afdefd89adb24be6796803743fcd78564 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.35 EUR
21+3.43 EUR
25+2.97 EUR
29+2.47 EUR
50+2.42 EUR
Mindestbestellmenge: 17
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NTZD3154NT1G NTZD3154NT1G ONSEMI NTZD3154N.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
auf Bestellung 1393 Stücke:
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186+0.39 EUR
236+0.3 EUR
283+0.25 EUR
463+0.15 EUR
562+0.13 EUR
736+0.097 EUR
Mindestbestellmenge: 186
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NTS4101PT1G NTS4101PT1G ONSEMI NTS4101P.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 2933 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
257+0.28 EUR
400+0.18 EUR
481+0.15 EUR
685+0.1 EUR
1000+0.093 EUR
Mindestbestellmenge: 173
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SMMUN2215LT1G SMMUN2215LT1G ONSEMI dtc114t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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LM285D-2.5G LM285D-2.5G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
56+1.29 EUR
83+0.87 EUR
110+0.65 EUR
111+0.64 EUR
Mindestbestellmenge: 51
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FQPF47P06 FQPF47P06 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1AA2D69CF974A15&compId=FQPF47P06.pdf?ci_sign=a8cd8163a4c53a7c85c45f19f1ae4bff51c5b9cf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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17+4.45 EUR
24+3.09 EUR
26+2.76 EUR
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FSBB30CH60C FSBB30CH60C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196D73F17B84259&compId=FSBB30CH60C.pdf?ci_sign=40ba4626435681b6dab2d5f0708ba6379c7f2ccc Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...150°C
Power dissipation: 106W
Output current: 30A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.71 EUR
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NTHL020N120SC1 NTHL020N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEAE42BBD540C7&compId=NTHL020N120SC1.PDF?ci_sign=ad8511e864d07f13b519235b7c577d9feffe137c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL041N60S5H NTHL041N60S5H ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE8818C1A9CA0D6&compId=NTHL041N60S5H.PDF?ci_sign=8f07e389ca7b9532b8cec4d5e06a9f47b7f04df9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.37 EUR
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4N37M 4N37M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9BFFF13913A0D6&compId=4N37M.pdf?ci_sign=b240d89f38bc9cf1131f90076c767f234b0da4ff description Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
auf Bestellung 429 Stücke:
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143+0.5 EUR
159+0.45 EUR
184+0.39 EUR
221+0.32 EUR
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4N37SM 4N37SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9BFFF13914E0D6&compId=4N37SM.pdf?ci_sign=4ea7bef9ae62cb57b7d96c629a4f940f0c31abe1 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 120 Stücke:
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120+0.6 EUR
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MC78L18ACPG MC78L18ACPG ONSEMI MC78LxxA_NCV78LxxA.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: MC78L00A
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
254+0.28 EUR
296+0.24 EUR
374+0.19 EUR
432+0.17 EUR
Mindestbestellmenge: 162
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N93C66BT3ETAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAT93C66VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV93C66VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817-40WT1G bc817-40w-d.pdf
BC817-40WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
650+0.11 EUR
926+0.077 EUR
1087+0.066 EUR
1474+0.049 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SBC817-40LT1G BC817-xxL.pdf
SBC817-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SBC817-40LT3G BC817-xxL.pdf
SBC817-40LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a
NTHL040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NV24C08DWVLT3G NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C08MUW3VLTBG NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08YI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP56T3G bcp56t1-d.pdf
BCP56T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846ALT1G.PDF
BC846CLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1080+0.066 EUR
Mindestbestellmenge: 1080
Im Einkaufswagen  Stück im Wert von  UAH
NTB25P06T4G ntb25p06-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G BAT54AW.pdf
BAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 5906 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
2174+0.033 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54ALT1G bat54alt1-d.pdf
SBAT54ALT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54ALT3G bat54alt1-d.pdf
SBAT54ALT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BC857CWT1G bc856bwt1-d.pdf
BC857CWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
SBC857CLT1G BC856_7_8.PDF
SBC857CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04DTVLT3G NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04MUW3VLTBG NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BWT1G bc856bwt1-d.pdf
BC856BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5926 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
596+0.12 EUR
736+0.097 EUR
1289+0.055 EUR
1613+0.044 EUR
2841+0.025 EUR
2924+0.024 EUR
Mindestbestellmenge: 455
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SBC856BDW1T1G BC85xBDW1T1.pdf
SBC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
650+0.11 EUR
999+0.072 EUR
1279+0.056 EUR
1409+0.051 EUR
Mindestbestellmenge: 385
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NCS20071SN2T1G NCS20071_2_4.PDF
NCS20071SN2T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape; Ch: single
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Bandwidth: 3MHz
Type of integrated circuit: operational amplifier
auf Bestellung 2345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
157+0.46 EUR
170+0.42 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16DTVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16DWVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16MUW3VLTBG NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16SNVLT3G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16UVLT2G NV24C16LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA64LT1G mmbta63lt1-d.pdf
MMBTA64LT1G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
auf Bestellung 749 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
562+0.13 EUR
749+0.096 EUR
Mindestbestellmenge: 455
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BZX84C15LT1G BZX84B_BZX84C.PDF
BZX84C15LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 3217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1042+0.069 EUR
1645+0.043 EUR
2000+0.036 EUR
2995+0.024 EUR
3217+0.023 EUR
Mindestbestellmenge: 625
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FQD3P50TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5
FQD3P50TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
61+1.19 EUR
68+1.06 EUR
74+0.97 EUR
100+0.89 EUR
250+0.87 EUR
Mindestbestellmenge: 43
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1N5361BG 1N53xx.PDF
1N5361BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Manufacturer series: 1N53xxB
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 27V
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
199+0.36 EUR
227+0.32 EUR
304+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 152
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MMBT5087LT1G mmbt5087lt1-d.pdf
MMBT5087LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Polarisation: bipolar
auf Bestellung 2008 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
802+0.089 EUR
958+0.075 EUR
1429+0.05 EUR
1667+0.043 EUR
1819+0.039 EUR
Mindestbestellmenge: 417
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BC857BWT1G bc856bwt1-d.pdf
BC857BWT1G
+1
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
390+0.19 EUR
Mindestbestellmenge: 390
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FDMS3660S fdms3660s-d.pdf
FDMS3660S
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
44+1.66 EUR
46+1.59 EUR
100+1.44 EUR
Mindestbestellmenge: 40
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FDMS7608S fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: Power56
Polarisation: unipolar
Gate charge: 24/30nC
On-state resistance: 13.9/8.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±20V
Drain current: 22/30A
Drain-source voltage: 30/30V
Produkt ist nicht verfügbar
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MC74VHC541DTG mc74vhc541-d.pdf
MC74VHC541DTG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DTR2G mc74vhc541-d.pdf
MC74VHC541DTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA4C0D3&compId=MC74VHC541-D.pdf?ci_sign=2962d32f628a84520095d1f388780c617e381cb3
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74AC253DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C7E0D3&compId=MC74AC253-D.pdf?ci_sign=7b905c43d925418847c9051cddbafbb1f926b31b
MC74AC253DR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Manufacturer series: AC
Family: AC
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2...6V DC
Number of inputs: 5
Kind of output: 3-state
Kind of integrated circuit: 3-state; multiplexer
Produkt ist nicht verfügbar
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FQP47P06 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199E4B6843E6259&compId=FQP47P06.pdf?ci_sign=8b76fd8afdefd89adb24be6796803743fcd78564
FQP47P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
21+3.43 EUR
25+2.97 EUR
29+2.47 EUR
50+2.42 EUR
Mindestbestellmenge: 17
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NTZD3154NT1G NTZD3154N.PDF
NTZD3154NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5nC
auf Bestellung 1393 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
236+0.3 EUR
283+0.25 EUR
463+0.15 EUR
562+0.13 EUR
736+0.097 EUR
Mindestbestellmenge: 186
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NTS4101PT1G NTS4101P.PDF
NTS4101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Gate charge: 6.4nC
On-state resistance: 0.16Ω
Power dissipation: 0.329W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 2933 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
257+0.28 EUR
400+0.18 EUR
481+0.15 EUR
685+0.1 EUR
1000+0.093 EUR
Mindestbestellmenge: 173
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SMMUN2215LT1G dtc114t-d.pdf
SMMUN2215LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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LM285D-2.5G LM285_LM385B.PDF
LM285D-2.5G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
56+1.29 EUR
83+0.87 EUR
110+0.65 EUR
111+0.64 EUR
Mindestbestellmenge: 51
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FQPF47P06 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B1AA2D69CF974A15&compId=FQPF47P06.pdf?ci_sign=a8cd8163a4c53a7c85c45f19f1ae4bff51c5b9cf
FQPF47P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.45 EUR
24+3.09 EUR
26+2.76 EUR
Mindestbestellmenge: 17
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FSBB30CH60C pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196D73F17B84259&compId=FSBB30CH60C.pdf?ci_sign=40ba4626435681b6dab2d5f0708ba6379c7f2ccc
FSBB30CH60C
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...150°C
Power dissipation: 106W
Output current: 30A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.71 EUR
Mindestbestellmenge: 3
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NTHL020N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEAE42BBD540C7&compId=NTHL020N120SC1.PDF?ci_sign=ad8511e864d07f13b519235b7c577d9feffe137c
NTHL020N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL041N60S5H pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE8818C1A9CA0D6&compId=NTHL041N60S5H.PDF?ci_sign=8f07e389ca7b9532b8cec4d5e06a9f47b7f04df9
NTHL041N60S5H
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.37 EUR
Mindestbestellmenge: 8
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4N37M description pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9BFFF13913A0D6&compId=4N37M.pdf?ci_sign=b240d89f38bc9cf1131f90076c767f234b0da4ff
4N37M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
159+0.45 EUR
184+0.39 EUR
221+0.32 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
4N37SM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9BFFF13914E0D6&compId=4N37SM.pdf?ci_sign=4ea7bef9ae62cb57b7d96c629a4f940f0c31abe1
4N37SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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MC78L18ACPG MC78LxxA_NCV78LxxA.PDF
MC78L18ACPG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: MC78L00A
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
254+0.28 EUR
296+0.24 EUR
374+0.19 EUR
432+0.17 EUR
Mindestbestellmenge: 162
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