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MC74AC245DTG MC74AC245DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Family: AC
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
81+0.88 EUR
99+0.73 EUR
111+0.65 EUR
117+0.61 EUR
122+0.59 EUR
Mindestbestellmenge: 50
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BAT54T1G BAT54T1G ONSEMI bat54t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 15691 Stücke:
Lieferzeit 14-21 Tag (e)
725+0.099 EUR
1112+0.064 EUR
1701+0.042 EUR
1969+0.036 EUR
2193+0.033 EUR
2416+0.03 EUR
4274+0.017 EUR
4546+0.016 EUR
Mindestbestellmenge: 725
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SZESD5B5.0ST1G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FMBA14 FMBA14 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN x2
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
1191+0.06 EUR
Mindestbestellmenge: 1191
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CAT3626HV4-GT2 ONSEMI cat3626-d.pdf Category: LED drivers
Description: IC: driver; LED driver; I2C; TQFN16; 32mA; 4.2V; Ch: 6; 3÷5.5VDC; 1MHz
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 1MHz
Interface: I2C
Kind of integrated circuit: LED driver
Case: TQFN16
Output current: 32mA
Supply voltage: 3...5.5V DC
Output voltage: 4.2V
Number of channels: 6
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MMSZ4V7T1G MMSZ4V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 3092 Stücke:
Lieferzeit 14-21 Tag (e)
609+0.12 EUR
893+0.08 EUR
1226+0.058 EUR
1421+0.05 EUR
2033+0.035 EUR
2674+0.027 EUR
2825+0.025 EUR
Mindestbestellmenge: 609
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NTR2101PT1G NTR2101PT1G ONSEMI ntr2101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1971 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
236+0.3 EUR
336+0.21 EUR
385+0.19 EUR
582+0.12 EUR
Mindestbestellmenge: 157
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FDN306P FDN306P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3954 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
201+0.36 EUR
268+0.27 EUR
400+0.18 EUR
424+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 143
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MBRS130LT3G MBRS130LT3G ONSEMI pVersion=0046&contRep=ZT&docId=E1C051B1320146F1A6F5005056AB5A8F&compId=mbrs130.pdf?ci_sign=e106ae61b4d5e0b8cbf67c3e23576b76b862c00e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Case: SMB
Load current: 1A
Max. off-state voltage: 30V
Max. forward voltage: 0.395V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
272+0.26 EUR
345+0.21 EUR
385+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 186
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SS14 SS14 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC80F478116040C4&compId=SSxx.pdf?ci_sign=2bedf5667bd971c989f277b0833ac0b4e538a06e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 7636 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
272+0.26 EUR
300+0.24 EUR
385+0.19 EUR
432+0.17 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 218
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FDV303N FDV303N ONSEMI pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.68A
Gate charge: 2.3nC
On-state resistance: 0.8Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
auf Bestellung 10786 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
435+0.16 EUR
621+0.12 EUR
722+0.099 EUR
1598+0.045 EUR
1690+0.042 EUR
Mindestbestellmenge: 313
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US1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVUS1GFA NRVUS1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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6N139SM 6N139SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE0174CDD1C745&compId=6N139SM-FAI.pdf?ci_sign=83ef5d15ae68fb1641376e339d06481a818855fb Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
78+0.92 EUR
114+0.63 EUR
121+0.59 EUR
Mindestbestellmenge: 57
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MC74ACT244DWG MC74ACT244DWG ONSEMI mc74ac244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MC74ACT244DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62A04BA7BE0D3&compId=MC74AC244-D.pdf?ci_sign=df8b97a5fea29bbc10e26bdb03186da2c2ad1b87 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MMQA5V6T1G ONSEMI mmqa-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; reel,tape
Type of diode: TVS array
Kind of package: reel; tape
Case: SC74-6
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; quadruple
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
272+0.26 EUR
304+0.24 EUR
400+0.18 EUR
455+0.16 EUR
667+0.11 EUR
705+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 218
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FDBL0150N60 ONSEMI fdbl0150n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMBZ5241BLT1G MMBZ5241BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Mounting: SMD
Type of diode: Zener
Leakage current: 2µA
Power dissipation: 0.3W
Zener voltage: 11V
Tolerance: ±5%
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
569+0.13 EUR
705+0.1 EUR
1749+0.041 EUR
2763+0.026 EUR
2948+0.024 EUR
Mindestbestellmenge: 455
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FCD7N60TM-WS ONSEMI fcd7n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCI7N60 ONSEMI fci7n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH47N60F-F133
+1
 		FCH47N60F-F133 ONSEMI fch47n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.18 EUR
7+11.51 EUR
Mindestbestellmenge: 6
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FDC3612 FDC3612 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
132+0.54 EUR
194+0.37 EUR
205+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 120
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CAT25256XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT25256YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDBL0240N100 ONSEMI fdbl0240n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCV3843BVD1R2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
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NCV3843BVDR2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
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NTR4003NT1G NTR4003NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
837+0.086 EUR
905+0.079 EUR
Mindestbestellmenge: 837
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FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB0260N1007L ONSEMI fdb0260n1007l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 ONSEMI fdbl0260n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF ONSEMI fcd620n60zf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 190A
Power dissipation: 250W
Pulsed drain current: 1.44kA
Gate charge: 249nC
Case: D2PAK-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 4.3mΩ
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
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14+5.16 EUR
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BZX84C6V2LT1G BZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
auf Bestellung 4508 Stücke:
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807+0.089 EUR
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1337+0.053 EUR
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3497+0.02 EUR
3704+0.019 EUR
Mindestbestellmenge: 556
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NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 200 Stücke:
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154+0.46 EUR
172+0.42 EUR
178+0.4 EUR
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FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
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FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PQFN4
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.36Ω
Power dissipation: 83W
Drain current: 10A
Gate-source voltage: ±30V
Pulsed drain current: 25A
Kind of package: reel; tape
Drain-source voltage: 650V
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM2575D2T-ADJG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
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J176-D74Z J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
167+0.43 EUR
200+0.36 EUR
260+0.28 EUR
319+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 125
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TIP42AG TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 6A
Current gain: 15...75
Collector-emitter voltage: 60V
Power dissipation: 65W
Frequency: 3MHz
Polarisation: bipolar
auf Bestellung 148 Stücke:
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48+1.51 EUR
104+0.69 EUR
110+0.65 EUR
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FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDBL0110N60 ONSEMI fdbl0110n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
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BC858CLT1G BC858CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2325 Stücke:
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555+0.13 EUR
782+0.092 EUR
1132+0.063 EUR
1337+0.053 EUR
1946+0.037 EUR
2325+0.031 EUR
Mindestbestellmenge: 555
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BC858BLT3G BC858BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MRA4007T3G MRA4007T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Case: SMA
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 15109 Stücke:
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264+0.27 EUR
379+0.19 EUR
508+0.14 EUR
576+0.12 EUR
1003+0.071 EUR
1060+0.067 EUR
10000+0.065 EUR
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NRVA4007T3G NRVA4007T3G ONSEMI mra4003t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Case: SMA
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Max. load current: 2A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Semiconductor structure: single diode
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FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
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NCV8406ASTT1G NCV8406ASTT1G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 0.46Ω
Number of channels: 1
Output current: 7A
Supply voltage: 60V DC
Case: SOT223
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 961 Stücke:
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47+1.53 EUR
57+1.27 EUR
69+1.04 EUR
73+0.99 EUR
100+0.94 EUR
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NTBG040N120M3S ONSEMI NTBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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MJF122G MJF122G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
auf Bestellung 178 Stücke:
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41+1.74 EUR
58+1.25 EUR
104+0.69 EUR
110+0.65 EUR
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NCV33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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FDD18N20LZ ONSEMI fdd18n20lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
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NSR05F20NXT5G ONSEMI nsr05f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
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74AC245MTC 74AC245MTC ONSEMI 74ACT245-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245MTCX 74AC245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC245DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c
MC74AC245DTG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Family: AC
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
81+0.88 EUR
99+0.73 EUR
111+0.65 EUR
117+0.61 EUR
122+0.59 EUR
Mindestbestellmenge: 50
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BAT54T1G bat54t1-d.pdf
BAT54T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 15691 Stücke:
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Anzahl Preis
725+0.099 EUR
1112+0.064 EUR
1701+0.042 EUR
1969+0.036 EUR
2193+0.033 EUR
2416+0.03 EUR
4274+0.017 EUR
4546+0.016 EUR
Mindestbestellmenge: 725
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SZESD5B5.0ST1G esd5b5.0st1-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FMBA14 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD04ABBD1798469&compId=FMBA14.pdf?ci_sign=80d8a07fb7315c6395d47373401cde7e8c4ffdff
FMBA14
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN x2; bipolar; Darlington; 30V; 1.2A; 0.7W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.2A
Power dissipation: 0.7W
Collector-emitter voltage: 30V
Frequency: 1.25MHz
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN x2
auf Bestellung 1423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1191+0.06 EUR
Mindestbestellmenge: 1191
Im Einkaufswagen  Stück im Wert von  UAH
CAT3626HV4-GT2 cat3626-d.pdf
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; I2C; TQFN16; 32mA; 4.2V; Ch: 6; 3÷5.5VDC; 1MHz
Mounting: SMD
Operating temperature: -40...85°C
Frequency: 1MHz
Interface: I2C
Kind of integrated circuit: LED driver
Case: TQFN16
Output current: 32mA
Supply voltage: 3...5.5V DC
Output voltage: 4.2V
Number of channels: 6
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4V7T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ4V7T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 3092 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
609+0.12 EUR
893+0.08 EUR
1226+0.058 EUR
1421+0.05 EUR
2033+0.035 EUR
2674+0.027 EUR
2825+0.025 EUR
Mindestbestellmenge: 609
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NTR2101PT1G ntr2101p-d.pdf
NTR2101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
236+0.3 EUR
336+0.21 EUR
385+0.19 EUR
582+0.12 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
FDN306P pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E4B33FE5D35EA&compId=FDN306P.pdf?ci_sign=26eedbb7a4dcd74ee32ee68829452848d1ab9f85
FDN306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
201+0.36 EUR
268+0.27 EUR
400+0.18 EUR
424+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
MBRS130LT3G pVersion=0046&contRep=ZT&docId=E1C051B1320146F1A6F5005056AB5A8F&compId=mbrs130.pdf?ci_sign=e106ae61b4d5e0b8cbf67c3e23576b76b862c00e
MBRS130LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Case: SMB
Load current: 1A
Max. off-state voltage: 30V
Max. forward voltage: 0.395V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
345+0.21 EUR
385+0.19 EUR
538+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
SS14 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC80F478116040C4&compId=SSxx.pdf?ci_sign=2bedf5667bd971c989f277b0833ac0b4e538a06e
SS14
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 7636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
300+0.24 EUR
385+0.19 EUR
432+0.17 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
FDV303N pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85
FDV303N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.68A
Gate charge: 2.3nC
On-state resistance: 0.8Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
auf Bestellung 10786 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
435+0.16 EUR
621+0.12 EUR
722+0.099 EUR
1598+0.045 EUR
1690+0.042 EUR
Mindestbestellmenge: 313
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US1GFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVUS1GFA us1mfa-d.pdf
NRVUS1GFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6N139SM pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE0174CDD1C745&compId=6N139SM-FAI.pdf?ci_sign=83ef5d15ae68fb1641376e339d06481a818855fb
6N139SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 400-2000%@0.5mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
78+0.92 EUR
114+0.63 EUR
121+0.59 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT244DWG mc74ac244-d.pdf
MC74ACT244DWG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MC74ACT244DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62A04BA7BE0D3&compId=MC74AC244-D.pdf?ci_sign=df8b97a5fea29bbc10e26bdb03186da2c2ad1b87
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MMQA5V6T1G mmqa-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; quadruple,common anode; SC74-6; reel,tape
Type of diode: TVS array
Kind of package: reel; tape
Case: SC74-6
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; quadruple
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
304+0.24 EUR
400+0.18 EUR
455+0.16 EUR
667+0.11 EUR
705+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5241BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5241BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Mounting: SMD
Type of diode: Zener
Leakage current: 2µA
Power dissipation: 0.3W
Zener voltage: 11V
Tolerance: ±5%
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
705+0.1 EUR
1749+0.041 EUR
2763+0.026 EUR
2948+0.024 EUR
Mindestbestellmenge: 455
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FCD7N60TM-WS fcd7n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCI7N60 fci7n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH47N60F-F133 fch47n60f-d.pdf
FCH47N60F-F133
+1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.18 EUR
7+11.51 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDC3612 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A58EB56DCDB260E2&compId=FDC3612.PDF?ci_sign=79261df772af88d070e7d6c2633dc7f42384222f
FDC3612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
132+0.54 EUR
194+0.37 EUR
205+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDBL0240N100 fdbl0240n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCV3843BVD1R2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV3843BVDR2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTR4003NT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff
NTR4003NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
837+0.086 EUR
905+0.079 EUR
Mindestbestellmenge: 837
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FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB0260N1007L fdb0260n1007l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0260N100 fdbl0260n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT199N60 fcmt199n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
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FCD620N60ZF fcd620n60zf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
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FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 190A
Power dissipation: 250W
Pulsed drain current: 1.44kA
Gate charge: 249nC
Case: D2PAK-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 4.3mΩ
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
14+5.16 EUR
15+4.79 EUR
25+4.75 EUR
Mindestbestellmenge: 12
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BZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
auf Bestellung 4508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
915+0.078 EUR
1337+0.053 EUR
1645+0.043 EUR
2488+0.029 EUR
3497+0.02 EUR
3704+0.019 EUR
Mindestbestellmenge: 556
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NDB5060L ndb5060l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
Produkt ist nicht verfügbar
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MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
154+0.46 EUR
172+0.42 EUR
178+0.4 EUR
184+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 136
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FCA20N60-F109 fca20n60_f109-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCMT360N65S3 fcmt360n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PQFN4
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.36Ω
Power dissipation: 83W
Drain current: 10A
Gate-source voltage: ±30V
Pulsed drain current: 25A
Kind of package: reel; tape
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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FDD5N50NZTM fdd5n50nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM2575D2T-ADJG pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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J176-D74Z j175-d.pdf
J176-D74Z
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
167+0.43 EUR
200+0.36 EUR
260+0.28 EUR
319+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 125
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TIP42AG tip41a-d.pdf
TIP42AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Kind of package: tube
Collector current: 6A
Current gain: 15...75
Collector-emitter voltage: 60V
Power dissipation: 65W
Frequency: 3MHz
Polarisation: bipolar
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
48+1.51 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 40
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FCD5N60TM-WS fcu5n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDBL0110N60 fdbl0110n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
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BC858CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
555+0.13 EUR
782+0.092 EUR
1132+0.063 EUR
1337+0.053 EUR
1946+0.037 EUR
2325+0.031 EUR
Mindestbestellmenge: 555
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BC858BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MRA4007T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Mounting: SMD
Case: SMA
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Semiconductor structure: single diode
auf Bestellung 15109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
379+0.19 EUR
508+0.14 EUR
576+0.12 EUR
1003+0.071 EUR
1060+0.067 EUR
10000+0.065 EUR
Mindestbestellmenge: 264
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NRVA4007T3G mra4003t3-d.pdf
NRVA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Case: SMA
Application: automotive industry
Type of diode: rectifying
Load current: 1A
Max. forward impulse current: 30A
Max. forward voltage: 1.18V
Max. load current: 2A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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FDBL0210N80 fdbl0210n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
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NCV8406ASTT1G ncv8406-d.pdf
NCV8406ASTT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Mounting: SMD
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 0.46Ω
Number of channels: 1
Output current: 7A
Supply voltage: 60V DC
Case: SOT223
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 961 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
57+1.27 EUR
69+1.04 EUR
73+0.99 EUR
100+0.94 EUR
Mindestbestellmenge: 47
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NTBG040N120M3S NTBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MJF122G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937
MJF122G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
58+1.25 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 41
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NCV33035DWR2G mc33035-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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FDD18N20LZ fdd18n20lz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
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NSR05F20NXT5G nsr05f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
Produkt ist nicht verfügbar
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74AC245MTC description 74ACT245-D.pdf
74AC245MTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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74AC245MTCX 74ACT245-D.pdf
74AC245MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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