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MMUN2211LT1G MMUN2211LT1G ONSEMI MUN2211.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
auf Bestellung 38588 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
863+0.083 EUR
1257+0.057 EUR
1480+0.048 EUR
1812+0.039 EUR
2093+0.034 EUR
2451+0.029 EUR
2660+0.027 EUR
3013+0.024 EUR
Mindestbestellmenge: 625
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SMMUN2211LT1G SMMUN2211LT1G ONSEMI MUN2211.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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MC34071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC78M09CDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 2361 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
197+0.36 EUR
225+0.32 EUR
269+0.27 EUR
304+0.24 EUR
334+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 167
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MC78M09BDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MUN5314DW1T1G MUN5314DW1T1G ONSEMI MUN5314DW1T1G-DTE.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2599 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
953+0.075 EUR
1241+0.058 EUR
1370+0.052 EUR
Mindestbestellmenge: 385
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MUN5311DW1T1G MUN5311DW1T1G ONSEMI MUN5311DW1.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
265+0.27 EUR
Mindestbestellmenge: 265
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MUN5313DW1T1G MUN5313DW1T1G ONSEMI MUN5313DW1.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
320+0.23 EUR
Mindestbestellmenge: 295
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SMUN5311DW1T1G SMUN5311DW1T1G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
368+0.19 EUR
447+0.16 EUR
Mindestbestellmenge: 295
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SMUN5314DW1T1G SMUN5314DW1T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
248+0.29 EUR
Mindestbestellmenge: 248
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MUN5312DW1T1G MUN5312DW1T1G ONSEMI MUN5312DW1.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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MUN5315DW1T1G ONSEMI dtc114tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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MUN5311DW1T2G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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MUN5312DW1T2G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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MUN5316DW1T1G MUN5316DW1T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5312DW1T1G SMUN5312DW1T1G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5311DW1T2G SMUN5311DW1T2G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5311DW1T3G SMUN5311DW1T3G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5313DW1T1G SMUN5313DW1T1G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5313DW1T3G SMUN5313DW1T3G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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SMUN5315DW1T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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NSVMUN531335DW1T1G ONSEMI mun531335dw1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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NSVMUN5312DW1T2G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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NSVMUN5316DW1T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
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BZX85C10 BZX85C10 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
auf Bestellung 2655 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
705+0.1 EUR
1386+0.052 EUR
1507+0.047 EUR
Mindestbestellmenge: 455
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BZX85C10-T50R ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
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FFSB2065B ONSEMI ffsb2065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Technology: SiC
Produkt ist nicht verfügbar
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FFSB2065B-F085 ONSEMI ffsb2065b-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
Produkt ist nicht verfügbar
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FFSB2065BDN-F085 ONSEMI ffsb2065bdn-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.75V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI NTH4L040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.45 EUR
Mindestbestellmenge: 4
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MMSD4448 MMSD4448 ONSEMI mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
auf Bestellung 3658 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
807+0.089 EUR
926+0.077 EUR
1021+0.07 EUR
Mindestbestellmenge: 625
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LM2575T-5G LM2575T-5G ONSEMI LM2575-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
40+1.79 EUR
Mindestbestellmenge: 31
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LM2575T-ADJG LM2575T-ADJG ONSEMI LM2575-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
41+1.76 EUR
Mindestbestellmenge: 38
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LM2575D2T-5G LM2575D2T-5G ONSEMI lm2575-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
38+1.89 EUR
Mindestbestellmenge: 32
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FQA90N15 FQA90N15 ONSEMI fqa90n15-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQA90N15-F109 FQA90N15-F109 ONSEMI fqa90n15_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DF08S DF08S ONSEMI DF04S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
auf Bestellung 3923 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
104+0.69 EUR
152+0.47 EUR
177+0.4 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 75
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NSV9435T1G ONSEMI nsb9435t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Produkt ist nicht verfügbar
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DTA123EET1G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123EM3T5G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123JET1G ONSEMI dta123j-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQU5N50CTU-WS ONSEMI FQU5N50CTU_WS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDH45N50F-F133 FDH45N50F-F133 ONSEMI fdh45n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQPF5N50CYDTU FQPF5N50CYDTU ONSEMI FQP5N50C%2C%20FQPF5N50C.pdf FAIRS27140-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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H11F3M H11F3M ONSEMI H11F3M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.59 EUR
25+3.4 EUR
50+3.07 EUR
100+2.93 EUR
Mindestbestellmenge: 16
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PCRU3060W ONSEMI Category: Transistors - Unclassified
Description: PCRU3060W
auf Bestellung 12492 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
Mindestbestellmenge: 24
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LM2574N-5G LM2574N-5G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
55+1.3 EUR
64+1.13 EUR
100+1.07 EUR
250+1 EUR
500+0.99 EUR
Mindestbestellmenge: 41
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LM2574N-ADJG LM2574N-ADJG ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 41
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LM2574N-12G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BD137G BD137G ONSEMI BD137.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
117+0.61 EUR
136+0.53 EUR
Mindestbestellmenge: 62
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BZX79C5V6 BZX79C5V6 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
770+0.093 EUR
Mindestbestellmenge: 556
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NVMFD5C466NLT1G ONSEMI nvmfd5c466nl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFD5C466NLWFT1G ONSEMI nvmfd5c466nl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL075N065SC1 NTHL075N065SC1 ONSEMI NTHL075N065SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
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NTH4L075N065SC1 ONSEMI nth4l075n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
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NVBG075N065SC1 ONSEMI nvbg075n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
800+10.6 EUR
Mindestbestellmenge: 800
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NXH040F120MNF1PG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040F120MNF1PTG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040P120MNF1PG ONSEMI nxh040p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MMUN2211LT1G MUN2211.PDF
MMUN2211LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
auf Bestellung 38588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
863+0.083 EUR
1257+0.057 EUR
1480+0.048 EUR
1812+0.039 EUR
2093+0.034 EUR
2451+0.029 EUR
2660+0.027 EUR
3013+0.024 EUR
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SMMUN2211LT1G MUN2211.PDF
SMMUN2211LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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MC34071DR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC78M09CDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 2361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
197+0.36 EUR
225+0.32 EUR
269+0.27 EUR
304+0.24 EUR
334+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 167
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MC78M09BDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 9V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 9V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MUN5314DW1T1G MUN5314DW1T1G-DTE.PDF
MUN5314DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
953+0.075 EUR
1241+0.058 EUR
1370+0.052 EUR
Mindestbestellmenge: 385
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MUN5311DW1T1G MUN5311DW1.pdf
MUN5311DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
265+0.27 EUR
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MUN5313DW1T1G MUN5313DW1.PDF
MUN5313DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
320+0.23 EUR
Mindestbestellmenge: 295
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SMUN5311DW1T1G dtc114ep-d.pdf
SMUN5311DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
368+0.19 EUR
447+0.16 EUR
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SMUN5314DW1T1G dtc114yp-d.pdf
SMUN5314DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
248+0.29 EUR
Mindestbestellmenge: 248
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MUN5312DW1T1G MUN5312DW1.pdf
MUN5312DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5315DW1T1G dtc114tp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5311DW1T2G dtc114ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5312DW1T2G dtc124ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUN5316DW1T1G dtc143tp-d.pdf
MUN5316DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5312DW1T1G dtc124ep-d.pdf
SMUN5312DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5311DW1T2G dtc114ep-d.pdf
SMUN5311DW1T2G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5311DW1T3G dtc114ep-d.pdf
SMUN5311DW1T3G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T1G dtc144ep-d.pdf
SMUN5313DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T3G dtc144ep-d.pdf
SMUN5313DW1T3G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5315DW1T1G dtc114yp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN531335DW1T1G mun531335dw1-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T2G dtc124ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5316DW1T1G dtc143tp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C10 BZX85C.PDF
BZX85C10
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
auf Bestellung 2655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
705+0.1 EUR
1386+0.052 EUR
1507+0.047 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C10-T50R BZX85C.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSB2065B ffsb2065b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSB2065B-F085 ffsb2065b-f085-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSB2065BDN-F085 ffsb2065bdn-f085-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.75V
Kind of package: reel; tape
Application: automotive industry
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L040N120SC1 NTH4L040N120SC1.PDF
NTH4L040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+21.45 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MMSD4448 mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw
MMSD4448
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
auf Bestellung 3658 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
807+0.089 EUR
926+0.077 EUR
1021+0.07 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
LM2575T-5G description LM2575-ON-DTE.PDF
LM2575T-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
40+1.79 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LM2575T-ADJG description LM2575-ON-DTE.PDF
LM2575T-ADJG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
41+1.76 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
LM2575D2T-5G lm2575-d.pdf
LM2575D2T-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
38+1.89 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
FQA90N15 fqa90n15-d.pdf
FQA90N15
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQA90N15-F109 fqa90n15_f109-d.pdf
FQA90N15-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DF08S DF04S.pdf
DF08S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
auf Bestellung 3923 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
104+0.69 EUR
152+0.47 EUR
177+0.4 EUR
204+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
NSV9435T1G nsb9435t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTA123EET1G dta123e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTA123EM3T5G dta123e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTA123JET1G dta123j-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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FDD5N50NZTM fdd5n50nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQU5N50CTU-WS FQU5N50CTU_WS.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDH45N50F-F133 fdh45n50f-d.pdf
FDH45N50F-F133
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQPF5N50CYDTU FQP5N50C%2C%20FQPF5N50C.pdf FAIRS27140-1.pdf?t.download=true&u=5oefqw
FQPF5N50CYDTU
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H11F3M H11F3M.pdf
H11F3M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 723 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.59 EUR
25+3.4 EUR
50+3.07 EUR
100+2.93 EUR
Mindestbestellmenge: 16
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PCRU3060W
Hersteller: ONSEMI
Category: Transistors - Unclassified
Description: PCRU3060W
auf Bestellung 12492 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
Mindestbestellmenge: 24
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LM2574N-5G description LM2574.pdf
LM2574N-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
55+1.3 EUR
64+1.13 EUR
100+1.07 EUR
250+1 EUR
500+0.99 EUR
Mindestbestellmenge: 41
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LM2574N-ADJG LM2574.pdf
LM2574N-ADJG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
55+1.3 EUR
59+1.23 EUR
Mindestbestellmenge: 41
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LM2574N-12G description LM2574.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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BD137G BD137.PDF
BD137G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
117+0.61 EUR
136+0.53 EUR
Mindestbestellmenge: 62
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BZX79C5V6 BZX79C.PDF
BZX79C5V6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
770+0.093 EUR
Mindestbestellmenge: 556
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NVMFD5C466NLT1G nvmfd5c466nl-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFD5C466NLWFT1G nvmfd5c466nl-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL075N065SC1 NTHL075N065SC1.PDF
NTHL075N065SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
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NTH4L075N065SC1 nth4l075n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
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NVBG075N065SC1 nvbg075n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+10.6 EUR
Mindestbestellmenge: 800
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NXH040F120MNF1PG nxh040f120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040P120MNF1PG nxh040p120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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