auf Bestellung 36140 Stücke:
Lieferzeit 1093-1107 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.76 EUR |
| 13+ | 4.24 EUR |
| 100+ | 3.41 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.81 EUR |
| 1500+ | 2.31 EUR |
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Technische Details NVMFD5C466NLT1G onsemi
Description: MOSFET 2N-CH 40V 14A/52A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V, Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD5C466NLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFD5C466NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 94 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFD5C466NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 14A/52A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD5C466NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 14A/52A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |