Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4435DY | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1682 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD2955T4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: -60V Pulsed drain current: -18A Drain current: -12A Gate charge: 15nC On-state resistance: 0.18Ω Power dissipation: 55W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 871 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5457 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 3mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Gate current: 10mA Kind of package: reel; tape |
auf Bestellung 2661 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5485 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 4mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Gate current: 10mA Kind of package: reel; tape |
auf Bestellung 2856 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5486 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBF5484 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Gate current: 10mA Kind of package: reel; tape |
auf Bestellung 2872 Stücke: Lieferzeit 14-21 Tag (e) |
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MCH3914-7-TL-H | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA Kind of package: reel; tape Mounting: SMD Case: MCPH3 Type of transistor: N-JFET Polarisation: unipolar Gate-source voltage: -15V Gate current: 5mA Drain current: 16mA Power dissipation: 0.3W Drain-source voltage: 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MCH3914-8-TL-H | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA Kind of package: reel; tape Mounting: SMD Case: MCPH3 Type of transistor: N-JFET Polarisation: unipolar Gate-source voltage: -15V Gate current: 5mA Drain current: 25mA Power dissipation: 0.3W Drain-source voltage: 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
IRFM120ATF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223 Mounting: SMD Case: SOT223 Polarisation: unipolar Gate charge: 16nC On-state resistance: 0.2Ω Drain current: 2.3A Power dissipation: 2.4W Pulsed drain current: 18A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTB110N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC33275ST-3.3T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: SOT223 Operating temperature: -40...125°C Output current: 0.8A Input voltage: 0...20V Output voltage: 3.3V Number of channels: 1 Tolerance: ±1% Voltage drop: 1.1V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Manufacturer series: MC33275 |
auf Bestellung 2881 Stücke: Lieferzeit 14-21 Tag (e) |
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NTB150N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK Type of transistor: N-MOSFET Power dissipation: 192W Case: D2PAK Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement On-state resistance: 0.15Ω Drain current: 24A Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTD250N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK Type of transistor: N-MOSFET Power dissipation: 106W Case: DPAK Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement On-state resistance: 0.25Ω Drain current: 13A Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDD86367-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3 On-state resistance: 4.2mΩ Case: DPAK3 Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Power dissipation: 227W Gate charge: 68nC Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBZ15VALT1G | ONSEMI |
![]() Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5% Type of diode: TVS array Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Leakage current: 50nA Max. forward impulse current: 1.9A Max. off-state voltage: 12V Breakdown voltage: 15V Peak pulse power dissipation: 40W Version: ESD |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG040N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TIP36CG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP36AG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD280N60S5Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
2SA2029M3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BD441G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Kind of package: bulk Current gain: 40...475 Power dissipation: 36W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MM3Z9V1T1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 3153 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS8878 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 10.2A; Idm: 80A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10.2A Pulsed drain current: 80A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC14014BDG | ONSEMI |
![]() Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of integrated circuit: 8bit; shift register Type of integrated circuit: digital Kind of package: tube Technology: CMOS Number of channels: 1 |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14014BDR2G | ONSEMI |
![]() Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; -40÷85°C Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of integrated circuit: 8bit; static shift register Case: SO16 Technology: CMOS Type of integrated circuit: digital Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NTMFS08N2D5C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Pulsed drain current: 823A Power dissipation: 138W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1256ASN100T1G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Number of channels: 1 Operating voltage: 8.9...26V DC Frequency: 93...107kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback Type of integrated circuit: PMIC Mounting: SMD Case: TSOP6 Operating temperature: -40...125°C Output current: -0.5...0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1256ASN65T1G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 61...70kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1256BSN65T1G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 61...70kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDD390N15ALZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 104A Power dissipation: 63W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 17.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2SA1416S-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 936 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416T-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC858BWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NTMFS024N06CT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDT86244 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 4.9nC On-state resistance: 128mΩ Power dissipation: 2.2W Drain current: 2.8A Pulsed drain current: 12A Drain-source voltage: 150V Case: SOT223 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC100EPT21DTG | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT21DTR2G | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT22DTG | ONSEMI |
![]() Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 2 Manufacturer series: 100EPT Number of channels: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT20DG | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC100EPT23MNR4G | ONSEMI |
![]() Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: VDFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of outputs: 2 Manufacturer series: 100EPT Number of channels: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMFS015N10MCLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 54A Pulsed drain current: 423A Power dissipation: 79W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC100EPT21DG | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT21DR2G | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT21MNR4G | ONSEMI |
![]() Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of outputs: 1 Manufacturer series: 100EPT Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT23DG | ONSEMI |
![]() Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 2 Manufacturer series: 100EPT Number of channels: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT23DTG | ONSEMI |
![]() Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of outputs: 2 Manufacturer series: 100EPT Number of channels: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC100EPT23DTR2G | ONSEMI |
![]() Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Number of outputs: 2 Manufacturer series: 100EPT Number of channels: 2 Number of inputs: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FSUSB42UMX | ONSEMI |
![]() Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: UMLP10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT |
Produkt ist nicht verfügbar |
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MRA4004T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Load current: 1A Max. forward voltage: 1.18V Max. load current: 30A Max. off-state voltage: 0.4kV Semiconductor structure: single diode |
auf Bestellung 3963 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1184 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP308MT300TBG | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6 Supply voltage: 1.6...5.5V DC Operating temperature: -40...125°C Case: WDFN6 Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Type of integrated circuit: supervisor circuit DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 2.79V Active logical level: low Kind of RESET output: open drain |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NSS60201LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Application: automotive industry Polarisation: bipolar Mounting: SMD Type of transistor: NPN Case: SOT23; TO236AB Kind of package: reel; tape Power dissipation: 0.54W Collector current: 2A Current gain: 150...350 Collector-emitter voltage: 60V Frequency: 100MHz |
Produkt ist nicht verfügbar |
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MOC3023M | ONSEMI |
![]() Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC302XM |
auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH45N50F-F133 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Pulsed drain current: 180A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5923BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Case: SMB Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 8.2V Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 2996 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5942BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode Type of diode: Zener Case: SMB Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 51V Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 2273 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z3V0T1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 1890 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C3V0LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: BZX84C |
auf Bestellung 2316 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT541ADWG | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: tube Manufacturer series: HCT |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4435DY |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1682 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.62 EUR |
67+ | 1.08 EUR |
100+ | 0.72 EUR |
105+ | 0.68 EUR |
500+ | 0.66 EUR |
NTD2955T4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
69+ | 1.05 EUR |
78+ | 0.93 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
MMBF5457 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2661 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
300+ | 0.24 EUR |
388+ | 0.18 EUR |
410+ | 0.17 EUR |
MMBF5485 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2856 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
459+ | 0.16 EUR |
491+ | 0.15 EUR |
596+ | 0.12 EUR |
625+ | 0.11 EUR |
MMBF5486 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBF5484 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2872 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
468+ | 0.15 EUR |
500+ | 0.14 EUR |
603+ | 0.12 EUR |
642+ | 0.11 EUR |
MCH3914-7-TL-H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCH3914-8-TL-H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFM120ATF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTB110N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33275ST-3.3T3G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.8A
Input voltage: 0...20V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.1V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC33275
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Output current: 0.8A
Input voltage: 0...20V
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.1V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: MC33275
auf Bestellung 2881 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
152+ | 0.47 EUR |
167+ | 0.43 EUR |
196+ | 0.37 EUR |
207+ | 0.35 EUR |
500+ | 0.33 EUR |
NTB150N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTD250N65S3H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD86367-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBZ15VALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
397+ | 0.19 EUR |
NTBG040N120SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TIP36CG |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.71 EUR |
14+ | 5.13 EUR |
25+ | 2.89 EUR |
26+ | 2.75 EUR |
TIP36AG |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.16 EUR |
25+ | 2.89 EUR |
27+ | 2.73 EUR |
30+ | 2.63 EUR |
NTD280N60S5Z |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2SA2029M3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD441G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
Produkt ist nicht verfügbar
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MM3Z9V1T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 3153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
609+ | 0.12 EUR |
944+ | 0.076 EUR |
1421+ | 0.05 EUR |
1719+ | 0.042 EUR |
2618+ | 0.027 EUR |
3013+ | 0.024 EUR |
3087+ | 0.023 EUR |
FDS8878 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.2A; Idm: 80A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.2A
Pulsed drain current: 80A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.2A; Idm: 80A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.2A
Pulsed drain current: 80A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14014BDG |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; 3÷18VDC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
187+ | 0.38 EUR |
206+ | 0.35 EUR |
219+ | 0.33 EUR |
272+ | 0.26 EUR |
290+ | 0.25 EUR |
MC14014BDR2G |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; static shift register
Case: SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; static shift register
Case: SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Produkt ist nicht verfügbar
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NTMFS08N2D5C |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Power dissipation: 138W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Power dissipation: 138W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP1256ASN100T1G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Number of channels: 1
Operating voltage: 8.9...26V DC
Frequency: 93...107kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Number of channels: 1
Operating voltage: 8.9...26V DC
Frequency: 93...107kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Produkt ist nicht verfügbar
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NCP1256ASN65T1G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 61...70kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 61...70kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26V DC
Produkt ist nicht verfügbar
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NCP1256BSN65T1G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 61...70kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 61...70kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26V DC
Produkt ist nicht verfügbar
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FDD390N15ALZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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2SA1416S-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 936 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
91+ | 0.79 EUR |
125+ | 0.58 EUR |
262+ | 0.27 EUR |
277+ | 0.26 EUR |
2SA1416T-TD-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC858BWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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NTMFS024N06CT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDT86244 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Case: SOT223
Produkt ist nicht verfügbar
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MC100EPT21DTG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
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MC100EPT21DTR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC100EPT22DTG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC100EPT20DG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC100EPT23MNR4G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
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NTMFS015N10MCLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC100EPT21DG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
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MC100EPT21DR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC100EPT21MNR4G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
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MC100EPT23DG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Produkt ist nicht verfügbar
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MC100EPT23DTG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC100EPT23DTR2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
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2N7002 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSUSB42UMX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MRA4004T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
auf Bestellung 3963 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
385+ | 0.19 EUR |
481+ | 0.15 EUR |
536+ | 0.13 EUR |
983+ | 0.073 EUR |
1040+ | 0.069 EUR |
NVTFS5116PLTAG |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1184 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
80+ | 0.9 EUR |
107+ | 0.67 EUR |
114+ | 0.63 EUR |
200+ | 0.61 EUR |
NCP308MT300TBG |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSS60201LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.54W
Collector current: 2A
Current gain: 150...350
Collector-emitter voltage: 60V
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.54W
Collector current: 2A
Current gain: 150...350
Collector-emitter voltage: 60V
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MOC3023M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
131+ | 0.55 EUR |
177+ | 0.41 EUR |
186+ | 0.38 EUR |
FDH45N50F-F133 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.74 EUR |
13+ | 5.58 EUR |
30+ | 5.52 EUR |
1SMB5923BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 8.2V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 8.2V
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
313+ | 0.23 EUR |
350+ | 0.2 EUR |
404+ | 0.18 EUR |
459+ | 0.16 EUR |
516+ | 0.14 EUR |
544+ | 0.13 EUR |
575+ | 0.12 EUR |
1SMB5942BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 51V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 51V
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
288+ | 0.25 EUR |
332+ | 0.22 EUR |
368+ | 0.19 EUR |
410+ | 0.17 EUR |
500+ | 0.14 EUR |
544+ | 0.13 EUR |
MM3Z3V0T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 1890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
582+ | 0.12 EUR |
848+ | 0.084 EUR |
1276+ | 0.056 EUR |
1539+ | 0.046 EUR |
1890+ | 0.037 EUR |
BZX84C3V0LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
auf Bestellung 2316 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
527+ | 0.14 EUR |
782+ | 0.092 EUR |
944+ | 0.076 EUR |
1534+ | 0.047 EUR |
1852+ | 0.039 EUR |
2316+ | 0.031 EUR |
MC74HCT541ADWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: tube
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: tube
Manufacturer series: HCT
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
81+ | 0.89 EUR |
105+ | 0.69 EUR |
112+ | 0.64 EUR |