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CNY17F3VM CNY17F3VM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00FFEA2280D6&compId=CNY17F3VM.pdf?ci_sign=2c0e6d78ef9a287466e772105ef08841a667c8b1 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 224 Stücke:
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193+0.37 EUR
224+0.31 EUR
Mindestbestellmenge: 193
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FQD13N06LTM FQD13N06LTM ONSEMI FQD13N06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
auf Bestellung 2080 Stücke:
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72+1 EUR
104+0.69 EUR
121+0.59 EUR
150+0.48 EUR
250+0.41 EUR
500+0.4 EUR
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LM2904VDR2G LM2904VDR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Produkt ist nicht verfügbar
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74AC86MTC 74AC86MTC ONSEMI 74ac86-d.pdf ONSM-S-A0003589997-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
auf Bestellung 171 Stücke:
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171+0.41 EUR
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MC74AC86DG MC74AC86DG ONSEMI mc74ac86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: XOR
Family: AC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
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MC74VHC573DTR2G MC74VHC573DTR2G ONSEMI mc74vhc573-d.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; TSSOP20; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Trigger: level-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of output: 3-state; non-inverting
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 2126 Stücke:
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73+0.99 EUR
102+0.71 EUR
112+0.64 EUR
128+0.56 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.49 EUR
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NTH4L020N120SC1 NTH4L020N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE5DC865AD80C7&compId=NTH4L020N120SC1.PDF?ci_sign=05ea16743d8515b94e77752726b0da5b5f378b97 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MC14060BDR2G MC14060BDR2G ONSEMI MC14060BDR2G.PDF Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Produkt ist nicht verfügbar
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MC14060BDTR2G ONSEMI MC14060B-D.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQB47P06TM-AM002 FQB47P06TM-AM002 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199497D63C9C259&compId=FQB47P06.pdf?ci_sign=7c37740ed8751f7c5f80a7514a0667d6458ca3bd Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 735 Stücke:
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19+3.78 EUR
25+2.92 EUR
26+2.76 EUR
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FQB55N10TM FQB55N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781973901FEFE0259&compId=FQB55N10.pdf?ci_sign=0b94fdec42ad125a870ffe3441fc2fd20d9bfa7b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 248 Stücke:
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32+2.3 EUR
36+2 EUR
39+1.84 EUR
43+1.7 EUR
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FQD11P06TM FQD11P06TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781994C4589FE2259&compId=FQD11P06.pdf?ci_sign=ee27c1aa84725a3bbb6670661b3207ae67af2f59 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2610 Stücke:
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46+1.56 EUR
60+1.21 EUR
67+1.08 EUR
87+0.83 EUR
100+0.75 EUR
250+0.69 EUR
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MC14504BDG MC14504BDG ONSEMI MC14504BDG.PDF description Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of outputs: 6
Number of channels: 6
Kind of integrated circuit: level shifter
auf Bestellung 124 Stücke:
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100+0.72 EUR
112+0.64 EUR
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1SMB5929BT3G 1SMB5929BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2764 Stücke:
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228+0.31 EUR
329+0.22 EUR
394+0.18 EUR
569+0.13 EUR
589+0.12 EUR
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NL27WZ16DTT1G NL27WZ16DTT1G ONSEMI NL27WZ16DFT2G.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
auf Bestellung 614 Stücke:
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193+0.37 EUR
229+0.31 EUR
281+0.25 EUR
421+0.17 EUR
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CAV93C56VE-GT3 ONSEMI CAV93C56-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA63LT1G MMBTA63LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
auf Bestellung 2925 Stücke:
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358+0.2 EUR
521+0.14 EUR
895+0.08 EUR
1283+0.056 EUR
1475+0.048 EUR
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FDMS86252L FDMS86252L ONSEMI fdms86252l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2703 Stücke:
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25+2.9 EUR
31+2.32 EUR
36+2.02 EUR
100+1.42 EUR
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MC14082BDG MC14082BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B97748D0F5811C&compId=MC14082BDG.PDF?ci_sign=5226bc3ecb63c8be9fbf93e4681e4379c91d28c5 Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 4
Kind of gate: AND
auf Bestellung 443 Stücke:
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193+0.37 EUR
264+0.27 EUR
291+0.25 EUR
315+0.23 EUR
332+0.22 EUR
348+0.21 EUR
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MC14082BDR2G MC14082BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 2355 Stücke:
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125+0.57 EUR
212+0.34 EUR
242+0.3 EUR
257+0.28 EUR
500+0.24 EUR
1000+0.23 EUR
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NV24C64DTVLT3G ONSEMI NV24C64LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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NV24C64DWVLT3G ONSEMI NV24C64LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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NV24C64MUW3VLTBG ONSEMI NV24C64LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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NV24C64UVLT2G ONSEMI NV24C64LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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CAV24C64WE-GT3 ONSEMI CAV24C64-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C64YE-GT3 ONSEMI CAV24C64-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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SBAV70LT1G SBAV70LT1G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 880 Stücke:
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455+0.16 EUR
820+0.087 EUR
880+0.082 EUR
Mindestbestellmenge: 455
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MOC3053M MOC3053M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020050FE0C7&compId=MOC3053M.pdf?ci_sign=557930f518d4bda3e7c63916a6840fbd9faec1a5 Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Produkt ist nicht verfügbar
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MC14511BDG MC14511BDG ONSEMI mc14511b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
auf Bestellung 14 Stücke:
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14+5.11 EUR
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RFD14N05SM9A RFD14N05SM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DECAA1801C6745&compId=RFD14N05SM9A.pdf?ci_sign=47ce6443d8b653473e0be2be6a7e70ce337923f7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5229 Stücke:
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114+0.63 EUR
124+0.58 EUR
130+0.55 EUR
133+0.54 EUR
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74LCX16501MTDX ONSEMI 74LCX16501-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 18bit; bus transceiver
Family: LCX
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 1.5...3.6V DC
Number of channels: 18
Manufacturer series: LCX
Technology: CMOS
Integrated circuit features: 5V tolerant on inputs/outputs
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SBC847BLT1G SBC847BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 453 Stücke:
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278+0.26 EUR
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BVSS123LT1G BVSS123LT1G ONSEMI bss123lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1865 Stücke:
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236+0.3 EUR
291+0.25 EUR
596+0.12 EUR
695+0.1 EUR
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MC14504BDR2G MC14504BDR2G ONSEMI mc14504b-d.pdf description Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of channels: 6
Kind of integrated circuit: level shifter
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
81+0.89 EUR
95+0.76 EUR
107+0.67 EUR
119+0.6 EUR
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MC14025BDR2G MC14025BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 1480 Stücke:
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215+0.33 EUR
240+0.3 EUR
260+0.28 EUR
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MC74VHCT125ADTRG MC74VHCT125ADTRG ONSEMI mc74vhct125a-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: VHCT
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 4
Kind of output: 3-state
Case: TSSOP14
auf Bestellung 4975 Stücke:
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125+0.57 EUR
155+0.46 EUR
173+0.41 EUR
200+0.36 EUR
240+0.3 EUR
258+0.28 EUR
Mindestbestellmenge: 125
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KST10MTF KST10MTF ONSEMI kst10-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
auf Bestellung 1123 Stücke:
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313+0.23 EUR
667+0.11 EUR
1036+0.069 EUR
1123+0.064 EUR
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MC74VHC244DTG ONSEMI MC74VHC244-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
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MC74VHC244DTR2G ONSEMI MC74VHC244-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
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MC74VHC244DWR2G ONSEMI MC74VHC244-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: SO20WB
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
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BZX84C4V7LT1G BZX84C4V7LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 6869 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
863+0.083 EUR
1021+0.07 EUR
1573+0.045 EUR
1902+0.038 EUR
2858+0.025 EUR
3334+0.021 EUR
4099+0.017 EUR
6000+0.015 EUR
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NSS12100XV6T1G NSS12100XV6T1G ONSEMI NSS12100XV6.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
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BSR16 BSR16 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3A604A081FD811C&compId=bsr16-fai-dte.pdf?ci_sign=aeea5129443f61098bae866dab48fe26f1e51c35 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
auf Bestellung 2076 Stücke:
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143+0.5 EUR
198+0.36 EUR
290+0.25 EUR
343+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
1500+0.12 EUR
Mindestbestellmenge: 143
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MC14081BDG MC14081BDG ONSEMI MC140xxB.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
143+0.5 EUR
161+0.45 EUR
179+0.4 EUR
193+0.37 EUR
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MC14081BDTR2G MC14081BDTR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
108+0.66 EUR
132+0.54 EUR
175+0.41 EUR
250+0.35 EUR
Mindestbestellmenge: 65
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MC14557BDWG MC14557BDWG ONSEMI MC14557-D.pdf Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Produkt ist nicht verfügbar
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FDMS86101 FDMS86101 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF734384ED1E28&compId=FDMS86101.pdf?ci_sign=fd2a7a2911d4762b27c23272b001ef3cc965d142 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FCMT299N60 ONSEMI fcmt299n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
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SBCP56-10T1G SBCP56-10T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
auf Bestellung 181 Stücke:
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125+0.57 EUR
181+0.4 EUR
Mindestbestellmenge: 125
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SBAS16HT1G SBAS16HT1G ONSEMI pVersion=0046&contRep=ZT&docId=E1C0470F8C515BF1A6F5005056AB5A8F&compId=BAS16HT1-D.pdf?ci_sign=d6b7c5929de3da2430131a18fbf25e167dcf4b39 Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
auf Bestellung 200 Stücke:
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200+0.36 EUR
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MC74ACT125DTR2G MC74ACT125DTR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
auf Bestellung 1736 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
166+0.43 EUR
186+0.38 EUR
214+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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FAN3111ESX FAN3111ESX ONSEMI FAN3111C.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -0.9...1.1A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 18ns
Pulse fall time: 17ns
Kind of package: reel; tape
auf Bestellung 1046 Stücke:
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52+1.39 EUR
80+0.9 EUR
99+0.73 EUR
132+0.54 EUR
Mindestbestellmenge: 52
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NCP361SNT1G NCP361SNT1G ONSEMI NCP361.pdf Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
Application: USB
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
115+0.63 EUR
138+0.52 EUR
167+0.43 EUR
Mindestbestellmenge: 87
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FIN1002M5X FIN1002M5X ONSEMI fin1002-d.pdf Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
auf Bestellung 1645 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
87+0.83 EUR
106+0.68 EUR
139+0.52 EUR
Mindestbestellmenge: 59
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2SB815-7-TB-E 2SB815-7-TB-E ONSEMI EN694-D.html Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Produkt ist nicht verfügbar
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NCP81080DR2G NCP81080DR2G ONSEMI ncp81080-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
61+1.19 EUR
68+1.06 EUR
100+0.97 EUR
Mindestbestellmenge: 54
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SS12 SS12 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
295+0.24 EUR
317+0.23 EUR
334+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 239
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BSS123 BSS123 ONSEMI BSS123-FAI.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 6670 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
428+0.17 EUR
632+0.11 EUR
749+0.096 EUR
1069+0.067 EUR
1217+0.059 EUR
1500+0.055 EUR
3000+0.049 EUR
6000+0.045 EUR
Mindestbestellmenge: 295
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BSS123W BSS123W ONSEMI bss123w-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
570+0.13 EUR
650+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 385
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1N5408G 1N5408G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1097 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
248+0.29 EUR
275+0.26 EUR
391+0.18 EUR
455+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 200
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CNY17F3VM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00FFEA2280D6&compId=CNY17F3VM.pdf?ci_sign=2c0e6d78ef9a287466e772105ef08841a667c8b1
CNY17F3VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
224+0.31 EUR
Mindestbestellmenge: 193
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FQD13N06LTM FQD13N06L.pdf
FQD13N06LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
104+0.69 EUR
121+0.59 EUR
150+0.48 EUR
250+0.41 EUR
500+0.4 EUR
Mindestbestellmenge: 72
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LM2904VDR2G lm358-d.pdf
LM2904VDR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Produkt ist nicht verfügbar
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74AC86MTC 74ac86-d.pdf ONSM-S-A0003589997-1.pdf?t.download=true&u=5oefqw
74AC86MTC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
171+0.41 EUR
Mindestbestellmenge: 171
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MC74AC86DG mc74ac86-d.pdf
MC74AC86DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: XOR
Family: AC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
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MC74VHC573DTR2G mc74vhc573-d.pdf
MC74VHC573DTR2G
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; TSSOP20; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHC
Trigger: level-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of output: 3-state; non-inverting
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
102+0.71 EUR
112+0.64 EUR
128+0.56 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.49 EUR
Mindestbestellmenge: 73
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NTH4L020N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE5DC865AD80C7&compId=NTH4L020N120SC1.PDF?ci_sign=05ea16743d8515b94e77752726b0da5b5f378b97
NTH4L020N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MC14060BDR2G MC14060BDR2G.PDF
MC14060BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14060BDTR2G MC14060B-D.pdf
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB47P06TM-AM002 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199497D63C9C259&compId=FQB47P06.pdf?ci_sign=7c37740ed8751f7c5f80a7514a0667d6458ca3bd
FQB47P06TM-AM002
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
25+2.92 EUR
26+2.76 EUR
Mindestbestellmenge: 19
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FQB55N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781973901FEFE0259&compId=FQB55N10.pdf?ci_sign=0b94fdec42ad125a870ffe3441fc2fd20d9bfa7b
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
36+2 EUR
39+1.84 EUR
43+1.7 EUR
Mindestbestellmenge: 32
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FQD11P06TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781994C4589FE2259&compId=FQD11P06.pdf?ci_sign=ee27c1aa84725a3bbb6670661b3207ae67af2f59
FQD11P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
60+1.21 EUR
67+1.08 EUR
87+0.83 EUR
100+0.75 EUR
250+0.69 EUR
Mindestbestellmenge: 46
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MC14504BDG description MC14504BDG.PDF
MC14504BDG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of outputs: 6
Number of channels: 6
Kind of integrated circuit: level shifter
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
112+0.64 EUR
Mindestbestellmenge: 100
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1SMB5929BT3G 1SMB59xxBT3G.PDF
1SMB5929BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
329+0.22 EUR
394+0.18 EUR
569+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 228
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NL27WZ16DTT1G NL27WZ16DFT2G.pdf
NL27WZ16DTT1G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
auf Bestellung 614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
229+0.31 EUR
281+0.25 EUR
421+0.17 EUR
Mindestbestellmenge: 193
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CAV93C56VE-GT3 CAV93C56-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA63LT1G mmbta63lt1-d.pdf
MMBTA63LT1G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: Darlington
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
521+0.14 EUR
895+0.08 EUR
1283+0.056 EUR
1475+0.048 EUR
Mindestbestellmenge: 358
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FDMS86252L fdms86252l-d.pdf
FDMS86252L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.9 EUR
31+2.32 EUR
36+2.02 EUR
100+1.42 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
MC14082BDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B97748D0F5811C&compId=MC14082BDG.PDF?ci_sign=5226bc3ecb63c8be9fbf93e4681e4379c91d28c5
MC14082BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Delay time: 130ns
Number of inputs: 4
Kind of gate: AND
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
264+0.27 EUR
291+0.25 EUR
315+0.23 EUR
332+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 193
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MC14082BDR2G MC14001B-D.pdf
MC14082BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
212+0.34 EUR
242+0.3 EUR
257+0.28 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
NV24C64DTVLT3G NV24C64LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C64DWVLT3G NV24C64LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C64MUW3VLTBG NV24C64LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C64UVLT2G NV24C64LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C64WE-GT3 CAV24C64-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C64YE-GT3 CAV24C64-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SBAV70LT1G bav70lt1-d.pdf
SBAV70LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
820+0.087 EUR
880+0.082 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MOC3053M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020050FE0C7&compId=MOC3053M.pdf?ci_sign=557930f518d4bda3e7c63916a6840fbd9faec1a5
MOC3053M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Produkt ist nicht verfügbar
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MC14511BDG mc14511b-d.pdf
MC14511BDG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Number of channels: 1
Number of inputs: 4
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.11 EUR
Mindestbestellmenge: 14
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RFD14N05SM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DECAA1801C6745&compId=RFD14N05SM9A.pdf?ci_sign=47ce6443d8b653473e0be2be6a7e70ce337923f7
RFD14N05SM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
124+0.58 EUR
130+0.55 EUR
133+0.54 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
74LCX16501MTDX 74LCX16501-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Case: TSSOP56
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: 18bit; bus transceiver
Family: LCX
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 1.5...3.6V DC
Number of channels: 18
Manufacturer series: LCX
Technology: CMOS
Integrated circuit features: 5V tolerant on inputs/outputs
Produkt ist nicht verfügbar
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SBC847BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1
SBC847BLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 453 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
453+0.16 EUR
Mindestbestellmenge: 278
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BVSS123LT1G bss123lt1-d.pdf
BVSS123LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.225W
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
236+0.3 EUR
291+0.25 EUR
596+0.12 EUR
695+0.1 EUR
Mindestbestellmenge: 179
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MC14504BDR2G description mc14504b-d.pdf
MC14504BDR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Number of channels: 6
Kind of integrated circuit: level shifter
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
81+0.89 EUR
95+0.76 EUR
107+0.67 EUR
119+0.6 EUR
Mindestbestellmenge: 57
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MC14025BDR2G MC14001B-D.pdf
MC14025BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
215+0.33 EUR
240+0.3 EUR
260+0.28 EUR
Mindestbestellmenge: 152
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MC74VHCT125ADTRG mc74vhct125a-d.pdf
MC74VHCT125ADTRG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: VHCT
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 4
Kind of output: 3-state
Case: TSSOP14
auf Bestellung 4975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
155+0.46 EUR
173+0.41 EUR
200+0.36 EUR
240+0.3 EUR
258+0.28 EUR
Mindestbestellmenge: 125
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KST10MTF kst10-d.pdf
KST10MTF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
667+0.11 EUR
1036+0.069 EUR
1123+0.064 EUR
Mindestbestellmenge: 313
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MC74VHC244DTG MC74VHC244-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
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MC74VHC244DTR2G MC74VHC244-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: TSSOP20
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC244DWR2G MC74VHC244-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Family: VHC
Technology: CMOS
Case: SO20WB
Manufacturer series: VHC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; bus buffer; octal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C4V7LT1G BZX84B_BZX84C.PDF
BZX84C4V7LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
auf Bestellung 6869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
863+0.083 EUR
1021+0.07 EUR
1573+0.045 EUR
1902+0.038 EUR
2858+0.025 EUR
3334+0.021 EUR
4099+0.017 EUR
6000+0.015 EUR
Mindestbestellmenge: 715
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NSS12100XV6T1G NSS12100XV6.PDF
NSS12100XV6T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
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BSR16 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3A604A081FD811C&compId=bsr16-fai-dte.pdf?ci_sign=aeea5129443f61098bae866dab48fe26f1e51c35
BSR16
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
198+0.36 EUR
290+0.25 EUR
343+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
1500+0.12 EUR
Mindestbestellmenge: 143
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MC14081BDG MC140xxB.PDF
MC14081BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
143+0.5 EUR
161+0.45 EUR
179+0.4 EUR
193+0.37 EUR
Mindestbestellmenge: 95
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MC14081BDTR2G MC14001B-D.pdf
MC14081BDTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
108+0.66 EUR
132+0.54 EUR
175+0.41 EUR
250+0.35 EUR
Mindestbestellmenge: 65
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MC14557BDWG MC14557-D.pdf
MC14557BDWG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; HEF4000B; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF734384ED1E28&compId=FDMS86101.pdf?ci_sign=fd2a7a2911d4762b27c23272b001ef3cc965d142
FDMS86101
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FCMT299N60 fcmt299n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
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SBCP56-10T1G BCP56_ser.pdf
SBCP56-10T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
181+0.4 EUR
Mindestbestellmenge: 125
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SBAS16HT1G pVersion=0046&contRep=ZT&docId=E1C0470F8C515BF1A6F5005056AB5A8F&compId=BAS16HT1-D.pdf?ci_sign=d6b7c5929de3da2430131a18fbf25e167dcf4b39
SBAS16HT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
Mindestbestellmenge: 200
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MC74ACT125DTR2G mc74ac125-d.pdf
MC74ACT125DTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Manufacturer series: ACT
Kind of output: 3-state
auf Bestellung 1736 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
166+0.43 EUR
186+0.38 EUR
214+0.33 EUR
500+0.32 EUR
Mindestbestellmenge: 107
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FAN3111ESX FAN3111C.pdf
FAN3111ESX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -0.9...1.1A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 18ns
Pulse fall time: 17ns
Kind of package: reel; tape
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
80+0.9 EUR
99+0.73 EUR
132+0.54 EUR
Mindestbestellmenge: 52
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NCP361SNT1G NCP361.pdf
NCP361SNT1G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Ch: 1; Uin: 1.2÷20V; OUT: transistor
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Type of integrated circuit: driver
Application: USB
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
115+0.63 EUR
138+0.52 EUR
167+0.43 EUR
Mindestbestellmenge: 87
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FIN1002M5X fin1002-d.pdf
FIN1002M5X
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Kind of integrated circuit: differential; line receiver; translator
Case: SOT23-5
auf Bestellung 1645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
87+0.83 EUR
106+0.68 EUR
139+0.52 EUR
Mindestbestellmenge: 59
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2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP81080DR2G ncp81080-d.pdf
NCP81080DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
61+1.19 EUR
68+1.06 EUR
100+0.97 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
SS12 SSxx.pdf
SS12
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
295+0.24 EUR
317+0.23 EUR
334+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 239
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BSS123 BSS123-FAI.pdf
BSS123
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 6670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
428+0.17 EUR
632+0.11 EUR
749+0.096 EUR
1069+0.067 EUR
1217+0.059 EUR
1500+0.055 EUR
3000+0.049 EUR
6000+0.045 EUR
Mindestbestellmenge: 295
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BSS123W bss123w-d.pdf
BSS123W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
570+0.13 EUR
650+0.11 EUR
715+0.1 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
1N5408G 1N540x.PDF
1N5408G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1097 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
248+0.29 EUR
275+0.26 EUR
391+0.18 EUR
455+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
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