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LM285Z-2.5RAG | ONSEMI |
 Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
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NSR05F40NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: DSN0402-2 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.46V Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NSR0530P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD923 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.62V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NSR05F30NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: 0402 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1SMB5956BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5953BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode Case: SMB Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 150V Manufacturer series: 1SMB59xxBT3G Semiconductor structure: single diode Mounting: SMD Type of diode: Zener |
auf Bestellung 1578 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5955BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 180V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBG025N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| NTMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 46A |
Produkt ist nicht verfügbar |
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| NTP110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
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| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 62nC |
Produkt ist nicht verfügbar |
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MM3Z3V3T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Case: SOD323 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 0.3W Zener voltage: 3.3V Tolerance: ±5% Manufacturer series: MM3ZxxT1G |
auf Bestellung 40730 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z3V3T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G |
auf Bestellung 2368 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBLS1D1N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 311W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 166nC On-state resistance: 1.05mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 351A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
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| NTBLS1D5N08MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2.9W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 111nC On-state resistance: 1.53mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 298A Pulsed drain current: 4487A |
Produkt ist nicht verfügbar |
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| NTBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 161W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 131nC On-state resistance: 1.5mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 312A Pulsed drain current: 2055A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBLS1D7N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.7mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 203A Pulsed drain current: 1173A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 147W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 60Ω Mounting: SMD Gate current: 50mA Kind of package: reel; tape |
auf Bestellung 904 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS32 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.5V Power dissipation: 2.27W Load current: 3A Max. off-state voltage: 20V Max. forward impulse current: 100A Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MC74AC125DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
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| SZESD7351HT1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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FDA16N50-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
Produkt ist nicht verfügbar |
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| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
Produkt ist nicht verfügbar |
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| 1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: 1N52xxB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Drain current: 1.2A Gate-source voltage: ±8V Kind of package: reel; tape Drain-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: PowerTrench® Case: SC70-6; SC88; SOT363 Mounting: SMD Polarisation: unipolar Gate charge: 2.6nC Power dissipation: 0.36W On-state resistance: 389mΩ |
Produkt ist nicht verfügbar |
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| FST3125DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: 4bit; bus switch Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Number of channels: 4 |
Produkt ist nicht verfügbar |
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FST3125MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 4bit; bus switch Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 3µA |
Produkt ist nicht verfügbar |
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| NCP130BMX080TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...85°C Case: XDFN6 Type of integrated circuit: voltage regulator Manufacturer series: NCP130 Voltage drop: 0.15V Output current: 0.3A Output voltage: 0.8V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| NCP130AMX080TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...85°C Case: XDFN6 Type of integrated circuit: voltage regulator Manufacturer series: NCP130 Voltage drop: 0.15V Output current: 0.3A Output voltage: 0.8V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| FGH75T65SHDTL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 126nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| FGH75T65SQDNL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 152nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| NTBG020N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8.6A Pulsed drain current: 392A Power dissipation: 3.7W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 0.22µC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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MOC8050M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 8.5µs CTR@If: 500%@10mA Turn-off time: 95µs |
Produkt ist nicht verfügbar |
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| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain-source voltage: -12V Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A |
Produkt ist nicht verfügbar |
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FCB260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24nC On-state resistance: 0.26Ω Drain current: 12A Gate-source voltage: ±30V Pulsed drain current: 30A Power dissipation: 90W Drain-source voltage: 650V Kind of channel: enhancement |
auf Bestellung 797 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCD260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 30A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NTPF360N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 28A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 17.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDB150N10 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Kind of channel: enhancement Type of transistor: N/P-MOSFET Power dissipation: 0.125W Drain current: 220/-127mA On-state resistance: 1.5/5Ω Gate-source voltage: ±8V Drain-source voltage: 20/-20V Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair |
Produkt ist nicht verfügbar |
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| MC33262DR2G | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO8 Mounting: SMD Kind of package: reel; tape Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
Produkt ist nicht verfügbar |
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| MC33262PG | ONSEMI |
 Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: DIP8 Mounting: THT Kind of package: tube Application: SMPS Output current: 0.5A Operating voltage: 12...28V DC Output voltage: 6.4V |
Produkt ist nicht verfügbar |
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| FAN4800AUN | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller; PWM controller Case: DIP16 Mounting: SMD Operating temperature: -40...105°C Topology: boost |
Produkt ist nicht verfügbar |
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| FAN4800AUM | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller; PWM controller Case: SO16 Mounting: SMD Operating temperature: -40...105°C Topology: boost |
Produkt ist nicht verfügbar |
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| FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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| FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| FUSB2805MLX | ONSEMI |
Category: USB interfaces - integrated circuits Description: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0 Operating temperature: -40...85°C Case: MLP32 Type of integrated circuit: interface Mounting: SMD Kind of integrated circuit: transceiver Interface: ULPI Kind of connector: USB 2.0 Supply voltage: 2.7...4.5V DC Data transfer rate: 0.48Gbps |
Produkt ist nicht verfügbar |
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NCP115ASN330T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Type of integrated circuit: voltage regulator Output current: 0.3A |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP114ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: TSOP5 Mounting: SMD Number of channels: 1 Voltage drop: 0.225V Operating temperature: -40...85°C Input voltage: 1.7...5.5V Tolerance: ±2% Manufacturer series: NCP114 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
auf Bestellung 3945 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9958 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6679AZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Case: SO8 Drain-source voltage: -30V Drain current: -13A Gate charge: 96nC On-state resistance: 14.8mΩ Power dissipation: 2.5W Gate-source voltage: ±25V Polarisation: unipolar |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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|
74VHCT08AMTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHCT Quiescent current: 20µA |
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74VHCT08AMX | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHCT Quiescent current: 20µA |
Produkt ist nicht verfügbar |
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| NCP1063AP060G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.78A Frequency: 54...66kHz Mounting: SMD Case: DIP7 Topology: buck; buck-boost; flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 14Ω Operating voltage: 7...20V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LM285Z-2.5RAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSR05F40NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: DSN0402-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: DSN0402-2
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSR0530P2T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD923
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSR05F30NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: 0402
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: 0402
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5956BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 334+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 596+ | 0.12 EUR |
| 1SMB5953BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 150V
Manufacturer series: 1SMB59xxBT3G
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 150V; SMD; reel,tape; SMB; single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 150V
Manufacturer series: 1SMB59xxBT3G
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
auf Bestellung 1578 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 256+ | 0.28 EUR |
| 321+ | 0.22 EUR |
| 360+ | 0.2 EUR |
| 443+ | 0.16 EUR |
| 468+ | 0.15 EUR |
| 1SMB5955BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 234+ | 0.31 EUR |
| 260+ | 0.28 EUR |
| 343+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| NTBG025N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMYS025N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB12N50FTM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 46A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 46A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM3Z3V3T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 3.3V
Tolerance: ±5%
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.3W
Zener voltage: 3.3V
Tolerance: ±5%
Manufacturer series: MM3ZxxT1G
auf Bestellung 40730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 658+ | 0.11 EUR |
| 863+ | 0.083 EUR |
| 1774+ | 0.04 EUR |
| 2326+ | 0.031 EUR |
| 3031+ | 0.024 EUR |
| 3425+ | 0.021 EUR |
| 3624+ | 0.02 EUR |
| MM5Z3V3T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 2368 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 658+ | 0.11 EUR |
| 962+ | 0.074 EUR |
| 1124+ | 0.064 EUR |
| 1303+ | 0.055 EUR |
| 1731+ | 0.041 EUR |
| 1832+ | 0.039 EUR |
| NTBLS1D1N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 311W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 311W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBLS1D5N08MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.9W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.9W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTBLS1D5N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NTBLS1D7N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
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Stück im Wert von UAH
| NTBLS1D7N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Produkt ist nicht verfügbar
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| BSR58 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Gate current: 50mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Gate current: 50mA
Kind of package: reel; tape
auf Bestellung 904 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 182+ | 0.39 EUR |
| 305+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 562+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| SS32 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTD20N06T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC125DR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; AC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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| SZESD7351HT1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FDA16N50-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDA16N50LDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
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| 1N5239BTR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FDG1024NZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST3125DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST3125MTCX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP130BMX080TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP130AMX080TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: XDFN6
Type of integrated circuit: voltage regulator
Manufacturer series: NCP130
Voltage drop: 0.15V
Output current: 0.3A
Output voltage: 0.8V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH75T65SHDTL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH75T65SQDNL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG020N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC8050M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 8.5µs
CTR@If: 500%@10mA
Turn-off time: 95µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 8.5µs
CTR@If: 500%@10mA
Turn-off time: 95µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJS2103PTBG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB260N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
auf Bestellung 797 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.95 EUR |
| 28+ | 2.62 EUR |
| 29+ | 2.47 EUR |
| 100+ | 2.37 EUR |
| FCD260N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF360N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB150N10 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTND31225CZTAG |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33262DR2G |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33262PG | |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN4800AUN |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN4800AUM |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGD3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3040G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGD3040G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FUSB2805MLX |
|
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0
Operating temperature: -40...85°C
Case: MLP32
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: ULPI
Kind of connector: USB 2.0
Supply voltage: 2.7...4.5V DC
Data transfer rate: 0.48Gbps
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI; transceiver; 2.7÷4.5VDC; MLP32; USB 2.0
Operating temperature: -40...85°C
Case: MLP32
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: transceiver
Interface: ULPI
Kind of connector: USB 2.0
Supply voltage: 2.7...4.5V DC
Data transfer rate: 0.48Gbps
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP115ASN330T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 190+ | 0.37 EUR |
| NCP114ASN330T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Number of channels: 1
Voltage drop: 0.225V
Operating temperature: -40...85°C
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Number of channels: 1
Voltage drop: 0.225V
Operating temperature: -40...85°C
Input voltage: 1.7...5.5V
Tolerance: ±2%
Manufacturer series: NCP114
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 543+ | 0.13 EUR |
| 863+ | 0.083 EUR |
| 1593+ | 0.045 EUR |
| 1684+ | 0.042 EUR |
| 2N7000 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 3945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 151+ | 0.47 EUR |
| 175+ | 0.41 EUR |
| 222+ | 0.32 EUR |
| 400+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| FDS9958 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 101+ | 0.71 EUR |
| 143+ | 0.5 EUR |
| 151+ | 0.47 EUR |
| 500+ | 0.46 EUR |
| FDS6679AZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
Gate charge: 96nC
On-state resistance: 14.8mΩ
Power dissipation: 2.5W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
Gate charge: 96nC
On-state resistance: 14.8mΩ
Power dissipation: 2.5W
Gate-source voltage: ±25V
Polarisation: unipolar
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.57 EUR |
| 63+ | 1.15 EUR |
| 76+ | 0.95 EUR |
| 108+ | 0.66 EUR |
| 114+ | 0.63 EUR |
| NTMJST2D6N08HTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT08AMTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT08AMX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHCT
Quiescent current: 20µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1063AP060G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.78A
Frequency: 54...66kHz
Mounting: SMD
Case: DIP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.78A
Frequency: 54...66kHz
Mounting: SMD
Case: DIP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 14Ω
Operating voltage: 7...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH