Weitere Produktangebote FDA032N08 nach Preis ab 3.83 EUR bis 12.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDA032N08 | ON Semiconductor |
 Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 156150 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 2850 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | ON Semiconductor |
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA032N08 | onsemi |
Description: MOSFET N-CH 75V 120A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V |
auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA032N08 | onsemi |
MOSFETs PT3 75V 3.2mohm |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA032N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Pulsed drain current: 940A Power dissipation: 37.5W Case: TO3PN Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDA032N08 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.12 EUR |
| FDA032N08 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 4.12 EUR |
| FDA032N08 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 138+ | 4.84 EUR |
| FDA032N08 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 156150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 138+ | 4.84 EUR |
| 500+ | 4.52 EUR |
| 1000+ | 4.18 EUR |
| 10000+ | 3.83 EUR |
| FDA032N08 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 2850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 138+ | 4.84 EUR |
| 500+ | 4.52 EUR |
| 1000+ | 4.18 EUR |
| FDA032N08 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 138+ | 4.84 EUR |
| FDA032N08 |
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Hersteller: onsemi
Description: MOSFET N-CH 75V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Description: MOSFET N-CH 75V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.5 EUR |
| 30+ | 5.93 EUR |
| 60+ | 5.38 EUR |
| 120+ | 4.93 EUR |
| FDA032N08 |
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Hersteller: onsemi
MOSFETs PT3 75V 3.2mohm
MOSFETs PT3 75V 3.2mohm
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.17 EUR |
| 10+ | 7.96 EUR |
| 120+ | 5.87 EUR |
| 510+ | 5.21 EUR |
| 1020+ | 4.61 EUR |
| FDA032N08 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)