| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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MM74HCT04MTCX | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Delay time: 12ns Kind of gate: NOT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HCT04MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Delay time: 12ns Kind of gate: NOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| US1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NRVUS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAS40LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape |
auf Bestellung 4470 Stücke: Lieferzeit 14-21 Tag (e) |
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DF04S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Case: SDIP 4L Electrical mounting: SMT Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN7382MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™ Operating temperature: -40...125°C Technology: MillerDrive™ Case: SOP8 Kind of package: reel; tape Mounting: SMD Protection: undervoltage UVP Output current: -650...350mA Pulse fall time: 80ns Impulse rise time: 140ns Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: H-bridge |
auf Bestellung 1052 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5484 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Gate-source voltage: ±30V Drain-source voltage: 500V |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.7Ω Kind of channel: enhancement Technology: UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate charge: 30nC On-state resistance: 0.65Ω Kind of channel: enhancement Technology: DMOS; UniFET™ Drain current: 6.9A Pulsed drain current: 46A Gate-source voltage: ±30V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUR4100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns |
auf Bestellung 359 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1A | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Semiconductor structure: single diode Max. forward voltage: 0.92V Load current: 1A Type of diode: rectifying Power dissipation: 1.47W Features of semiconductor devices: fast switching Case: SMA Max. forward impulse current: 30A Max. off-state voltage: 50V Capacitance: 7pF Kind of package: reel; tape Reverse recovery time: 15ns Leakage current: 0.1mA |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV7812BD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
auf Bestellung 1596 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NE592D8R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V Type of integrated circuit: video amplifier Bandwidth: 120MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 8V DC Case: SO8 Operating temperature: 0...70°C Gain: 100V/V; 400V/V Kind of package: reel; tape Input bias current: 40µA Input offset current: 6µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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QSD2030F | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Mounting: THT Wavelength: 700...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 20° LED lens: black Front: convex Type of photoelement: photodiode |
auf Bestellung 706 Stücke: Lieferzeit 14-21 Tag (e) |
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QSD2030 | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Mounting: THT Wavelength: 400...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Operating voltage: 1.3V Viewing angle: 40° LED lens: transparent Front: convex Type of photoelement: photodiode |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Power dissipation: 0.2/0.3W |
auf Bestellung 163 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC114YET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Power dissipation: 0.6W Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Power dissipation: 0.6W Quantity in set/package: 8000pcs. |
auf Bestellung 5190 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Kind of package: reel; tape Output current: -4.3...2.8A Kind of output: non-inverting Impulse rise time: 20ns Number of channels: 2 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 1173 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Kind of package: reel; tape Output current: -4.3...2.8A Kind of output: non-inverting Impulse rise time: 20ns Number of channels: 2 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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4N32M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 50%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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4N32SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Insulation voltage: 2.5kV Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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FQAF11N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 120W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MJL21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Frequency: 4MHz Kind of package: tube |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N5358BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1N5358BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FSB50450S | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Operating temperature: -20...100°C Type of integrated circuit: driver Topology: MOSFET three-phase bridge Technology: Motion SPM® 5 Mounting: SMD Output current: 1.5A Operating voltage: 13.5...16.5/0...400V DC Number of channels: 6 Power dissipation: 10W Collector-emitter voltage: 500V Frequency: 15kHz Kind of integrated circuit: 3-phase motor controller; IPM Case: SPM5D-023 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FSB50550US | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Operating temperature: -40...150°C Type of integrated circuit: driver Topology: MOSFET three-phase bridge Technology: Motion SPM® 5 Mounting: SMD Output current: 2A Operating voltage: 13.5...16.5/0...400V DC Number of channels: 6 Power dissipation: 14.5W Collector-emitter voltage: 500V Kind of integrated circuit: 3-phase motor controller; IPM Case: SPM5H-023 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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RS1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Case: DO214AC; SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Power dissipation: 1.19W Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
auf Bestellung 456 Stücke: Lieferzeit 14-21 Tag (e) |
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| RS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| RS1JFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Case: SOD123HE Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 300ns Load current: 1.2A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Application: automotive industry Case: SOD123F Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 0.8A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 30W Case: TO220AB Current gain: 100...200 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Power dissipation: 277W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 0.37µC |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Collector current: 60A Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 240A Power dissipation: 259W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 311nC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Collector current: 75A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 395W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 399nC |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Collector current: 40A Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Features of semiconductor devices: integrated anti-parallel diode Power dissipation: 277W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 0.37µC |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP3N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 107W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC14027BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Kind of integrated circuit: JK flip-flop Type of integrated circuit: digital Number of channels: 2 Trigger: negative-edge-triggered |
auf Bestellung 2173 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVLJWS022N06CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6 Case: WDFNW6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.6nC On-state resistance: 21mΩ Power dissipation: 14W Drain current: 25A Pulsed drain current: 90A Gate-source voltage: ±20V Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Case: TO92 Formed Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: Ammo Pack Type of transistor: PNP |
auf Bestellung 3305 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Case: TO92 Power dissipation: 0.9W Collector current: 1A Current gain: 160...320 Collector-emitter voltage: 160V Frequency: 50MHz Polarisation: bipolar Kind of package: bulk Type of transistor: PNP |
auf Bestellung 5870 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX85C12-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Output current: 1A Voltage drop: 1.3V Number of channels: 1 Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Mounting: SMT Case: SO14 Integrated circuit features: low noise Voltage supply range: ± 5...18V DC; 10...36V DC Slew rate: 7V/μs Bandwidth: 16MHz Number of channels: quad; 4 Kind of package: reel; tape Operating temperature: -40...85°C Input offset voltage: 3.5mV |
auf Bestellung 3444 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33035DWR2G | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brushless motor controller Case: SO24 Output current: 0.1A Number of channels: 3 Supply voltage: 0...40V DC Mounting: SMD Operating temperature: -40...85°C Application: universal Operating voltage: 10...30V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MM74HCT04MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Delay time: 12ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Delay time: 12ns
Kind of gate: NOT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT04MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Delay time: 12ns
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Delay time: 12ns
Kind of gate: NOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| US1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVUS1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 4470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 715+ | 0.1 EUR |
| 820+ | 0.087 EUR |
| 1064+ | 0.067 EUR |
| 1183+ | 0.06 EUR |
| 1511+ | 0.047 EUR |
| 1755+ | 0.041 EUR |
| 1924+ | 0.037 EUR |
| 3000+ | 0.032 EUR |
| DF04S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 94+ | 0.77 EUR |
| 105+ | 0.68 EUR |
| 137+ | 0.52 EUR |
| 154+ | 0.46 EUR |
| 200+ | 0.41 EUR |
| FAN7382MX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Operating temperature: -40...125°C
Technology: MillerDrive™
Case: SOP8
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 80ns
Impulse rise time: 140ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: H-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Operating temperature: -40...125°C
Technology: MillerDrive™
Case: SOP8
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -650...350mA
Pulse fall time: 80ns
Impulse rise time: 140ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: H-bridge
auf Bestellung 1052 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 52+ | 1.4 EUR |
| 61+ | 1.17 EUR |
| 100+ | 1.04 EUR |
| MMBF5484 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 232+ | 0.31 EUR |
| FDPF12N50T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Gate-source voltage: ±30V
Drain-source voltage: 500V
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 36+ | 2.03 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.62 EUR |
| FDB12N50FTM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB12N50TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.65Ω
Kind of channel: enhancement
Technology: DMOS; UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR4100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; bulk; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 127+ | 0.57 EUR |
| 134+ | 0.54 EUR |
| ES1A |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Load current: 1A
Type of diode: rectifying
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Capacitance: 7pF
Kind of package: reel; tape
Reverse recovery time: 15ns
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Semiconductor structure: single diode
Max. forward voltage: 0.92V
Load current: 1A
Type of diode: rectifying
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Case: SMA
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Capacitance: 7pF
Kind of package: reel; tape
Reverse recovery time: 15ns
Leakage current: 0.1mA
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 281+ | 0.25 EUR |
| 350+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| 443+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| NCV7812BD2TR4G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
auf Bestellung 1596 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 144+ | 0.5 EUR |
| 154+ | 0.47 EUR |
| 173+ | 0.41 EUR |
| 250+ | 0.4 EUR |
| 1N5337BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| 1N5337BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NE592D8R2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Bandwidth: 120MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 8V DC
Case: SO8
Operating temperature: 0...70°C
Gain: 100V/V; 400V/V
Kind of package: reel; tape
Input bias current: 40µA
Input offset current: 6µA
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Bandwidth: 120MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 8V DC
Case: SO8
Operating temperature: 0...70°C
Gain: 100V/V; 400V/V
Kind of package: reel; tape
Input bias current: 40µA
Input offset current: 6µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| QSD2030F |
|
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 20°
LED lens: black
Front: convex
Type of photoelement: photodiode
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 137+ | 0.52 EUR |
| 168+ | 0.43 EUR |
| 197+ | 0.36 EUR |
| 232+ | 0.31 EUR |
| 250+ | 0.3 EUR |
| QSD2030 |
|
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Mounting: THT
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Type of photoelement: photodiode
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 187+ | 0.38 EUR |
| 269+ | 0.27 EUR |
| 321+ | 0.22 EUR |
| DTC114EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.2/0.3W
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 163+ | 0.44 EUR |
| DTC114YET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114YM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
auf Bestellung 5190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 250+ | 0.29 EUR |
| 290+ | 0.25 EUR |
| 540+ | 0.13 EUR |
| 892+ | 0.08 EUR |
| 1085+ | 0.066 EUR |
| 2000+ | 0.058 EUR |
| 2500+ | 0.056 EUR |
| FAN3224TMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -4.3...2.8A
Kind of output: non-inverting
Impulse rise time: 20ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -4.3...2.8A
Kind of output: non-inverting
Impulse rise time: 20ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 1173 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 65+ | 1.1 EUR |
| 73+ | 0.99 EUR |
| 85+ | 0.84 EUR |
| FAN3224CMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -4.3...2.8A
Kind of output: non-inverting
Impulse rise time: 20ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -4.3...2.8A
Kind of output: non-inverting
Impulse rise time: 20ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 1.96 EUR |
| 39+ | 1.86 EUR |
| 43+ | 1.69 EUR |
| 100+ | 1.59 EUR |
| 4N32M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 4N32SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 109+ | 0.66 EUR |
| ES3J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 277+ | 0.26 EUR |
| FQAF11N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.92 EUR |
| 18+ | 4.12 EUR |
| MJL21194G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Frequency: 4MHz
Kind of package: tube
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 18+ | 3.99 EUR |
| 25+ | 3.92 EUR |
| NTMFSC011N08M7 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5358BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5358BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50450S |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 1.5A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 10W
Collector-emitter voltage: 500V
Frequency: 15kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5D-023
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 1.5A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 10W
Collector-emitter voltage: 500V
Frequency: 15kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5D-023
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550US |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 14.5W
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5H-023
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 14.5W
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5H-023
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5248BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 323+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 456+ | 0.16 EUR |
| RS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1JFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NRVHPRS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
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| KSD880YTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 30W
Case: TO220AB
Current gain: 100...200
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 10.02 EUR |
| 10+ | 8.64 EUR |
| FGY60T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Collector current: 60A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Power dissipation: 259W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 311nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Collector current: 60A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Power dissipation: 259W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 311nC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| FGY75T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 395W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 399nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Collector current: 75A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 395W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 399nC
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 11.95 EUR |
| FGH40T120SMD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Collector current: 40A
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Power dissipation: 277W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 13.91 EUR |
| FQPF3N80C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| FQP3N80C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14027BDR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
auf Bestellung 2173 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 154+ | 0.47 EUR |
| 171+ | 0.42 EUR |
| 197+ | 0.36 EUR |
| 216+ | 0.33 EUR |
| 234+ | 0.31 EUR |
| 250+ | 0.29 EUR |
| 256+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| NVLJWS022N06CLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA1013YTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 158+ | 0.45 EUR |
| 208+ | 0.34 EUR |
| 235+ | 0.3 EUR |
| 277+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| KSA1013YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
auf Bestellung 5870 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 125+ | 0.57 EUR |
| 145+ | 0.49 EUR |
| 242+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| BZX85C12-T50R |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7918CTG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 146+ | 0.49 EUR |
| 161+ | 0.44 EUR |
| 174+ | 0.41 EUR |
| 187+ | 0.38 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 293+ | 0.24 EUR |
| 505+ | 0.14 EUR |
| 727+ | 0.098 EUR |
| 1000+ | 0.086 EUR |
| MC33079DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
auf Bestellung 3444 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 221+ | 0.32 EUR |
| 254+ | 0.28 EUR |
| 280+ | 0.26 EUR |
| 305+ | 0.23 EUR |
| 338+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 2500+ | 0.19 EUR |
| MC33074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 122+ | 0.59 EUR |
| 160+ | 0.45 EUR |
| 163+ | 0.44 EUR |
| MC33035DWR2G |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33074ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33074ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH