| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
| MJE2955TG | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB Kind of package: tube Case: TO220AB Type of transistor: PNP Mounting: THT Power dissipation: 125W Current gain: 20...100 Collector current: 10A Collector-emitter voltage: 60V Frequency: 2MHz Polarisation: bipolar |
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| SVD2955T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Drain-source voltage: -60V Pulsed drain current: -18A Drain current: -12A Gate charge: 15nC On-state resistance: 0.18Ω Power dissipation: 55W Gate-source voltage: ±20V Polarisation: unipolar |
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SS8550CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
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| NGTB40N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3 Type of transistor: IGBT Power dissipation: 267W Case: TO247-3 Mounting: THT Gate charge: 313nC Kind of package: tube Collector current: 40A Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 200A |
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| NTHL040N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Pulsed drain current: 134A Power dissipation: 115W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
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| NVBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -3...18V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Kind of channel: enhancement |
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| NVBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| NVHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
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| LM358EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: SO8 Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input offset current: 150nA |
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| LM358DMR2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: dual Case: Micro8 Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: 3...32V DC Input offset current: 150nA Kind of package: reel; tape |
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| MMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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| NSVMMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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| LM339DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA Type of integrated circuit: comparator Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| LM339EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA Type of integrated circuit: comparator Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| FCP380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
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| FCP380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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| FCPF380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
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| FCPF380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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| NGTB15N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3 Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 109nC Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 147W Pulsed collector current: 60A Collector-emitter voltage: 1.2kV |
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| NGTB25N120FL3WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 136nC Kind of package: tube |
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| NSVBC817-40WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| MC33202DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape Mounting: SMT Case: Micro8 Operating temperature: -40...105°C Kind of package: reel; tape Input offset current: 100nA Input bias current: 0.25µA Input offset voltage: 11mV Voltage supply range: ± 1.8...12V DC Slew rate: 1V/μs Bandwidth: 2.2MHz Number of channels: dual Type of integrated circuit: operational amplifier |
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| MC33202VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape Mounting: SMT Case: SO8 Operating temperature: -55...125°C Kind of package: reel; tape Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 14mV Voltage supply range: ± 1.8...12V DC Slew rate: 1V/μs Bandwidth: 2.2MHz Number of channels: dual Type of integrated circuit: operational amplifier |
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| LM2902DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: quad Case: TSSOP14 Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
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| LM2902EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: quad Case: SO14 Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
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| LM2902VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: quad Case: SO14 Operating temperature: -40...125°C Input offset voltage: 13mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
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| LM2902VDTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: quad Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 13mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
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| MC33274ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 24MHz Mounting: SMT Case: TSSOP14 Slew rate: 10V/μs Operating temperature: -40...85°C Input offset voltage: 1.8mV Voltage supply range: ± 1.5...18V DC; 3...36V DC Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 80nA Number of channels: quad |
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| NVMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8 Kind of package: reel; tape Pulsed drain current: 900A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Power dissipation: 146W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 165A |
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| MC78M12ACDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| NCV78M12BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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J112-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: tape Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
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J112-D27Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: tape Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
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J112-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: Ammo Pack Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
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| LM1117MPX-50NOPB | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MC7805ACD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Case: D2PAK Output current: 1A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Output voltage: 5V Kind of voltage regulator: fixed; linear |
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| NGTB40N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 170nC Kind of package: tube |
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| NVH040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Gate charge: 153nC Kind of package: tube Gate-source voltage: ±30V Pulsed drain current: 162.5A Kind of channel: enhancement Drain-source voltage: 650V Polarisation: unipolar On-state resistance: 40mΩ Drain current: 65A |
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| LM393DMR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 5nA Input bias current: 20nA Input offset voltage: 5mV Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Type of integrated circuit: comparator Case: Micro8 |
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| MBT3904DW1T1H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape |
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| NST3904DP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.42W Case: SOT963 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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| LM2576TV-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
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| LM2576TV-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
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SS8050DTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 25V; 1.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
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| 2SC5200OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 150W Case: TO264 Current gain: 80...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
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| NSV1C301ET4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK Kind of package: reel; tape Mounting: SMD Type of transistor: NPN Power dissipation: 12.5W Collector current: 3A Collector-emitter voltage: 100V Current gain: 120...360 Application: automotive industry Polarisation: bipolar Case: DPAK |
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| NSS1C301ET4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK Kind of package: reel; tape Mounting: SMD Type of transistor: NPN Power dissipation: 12.5W Collector current: 3A Collector-emitter voltage: 100V Current gain: 120...360 Polarisation: bipolar Case: DPAK |
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| NCV21671SQ025T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 40kHz; SC70-6; 25V/V; 0.019mV Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Slew rate: 0.3V/μs Gain: 25V/V Input offset voltage: 0.019mV Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 35µA Input offset current: 300nA Number of channels: single |
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| NCV21671SQ050T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 40kHz; SC70-6; 50V/V; 0.012mV Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Slew rate: 0.3V/μs Gain: 50V/V Input offset voltage: 12µV Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 35µA Input offset current: 300nA Number of channels: single |
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| NCV21674DMG050R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 270kHz; Micro8; 50V/V; 0.55mV Case: Micro8 Mounting: SMT Kind of package: reel; tape Operating temperature: -40...150°C Input offset current: 15µA Input bias current: 1µA Input offset voltage: 0.55mV Slew rate: 2V/μs Voltage supply range: 2.7...5.5V DC Gain: 50V/V Bandwidth: 270kHz Number of channels: dual Type of integrated circuit: instrumentation amplifier |
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| NCV78M05ABDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV78M05BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| LMV321SN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: TSOP5 Number of channels: single Mounting: SMT Operating temperature: -40...85°C |
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| LMV321SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; SC70-5; 2.7÷5VDC; reel,tape Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SC70-5 Number of channels: single Mounting: SMT Operating temperature: -40...85°C |
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| LMV321ISN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: TSOP5 Number of channels: single Mounting: SMT Operating temperature: -40...125°C |
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| FSL336LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1.8A Output voltage: 650V Frequency: 50kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...125°C Topology: buck; buck-boost; flyback Input voltage: 85...265V On-state resistance: 4Ω Kind of package: tube Power: 9/20W Application: SMPS |
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| FSL306LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Output voltage: 650V Frequency: 50kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...125°C Topology: buck; buck-boost; flyback Input voltage: 85...265V On-state resistance: 18Ω Kind of package: tube Power: 3/7W Application: SMPS |
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| TIP35CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
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| NCV78L08ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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 |
MC74HC175ADG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 4 Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: tube Trigger: positive-edge-triggered Manufacturer series: HC Technology: CMOS |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
|
| MJE2955TG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Type of transistor: PNP
Mounting: THT
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Kind of package: tube
Case: TO220AB
Type of transistor: PNP
Mounting: THT
Power dissipation: 125W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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| SVD2955T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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| SS8550CTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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| NGTB40N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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| NTHL040N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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| NVBG040N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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| NVBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Stück im Wert von UAH
| NVHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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| LM358EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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| LM358DMR2G | |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
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| MMBT3906TT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NSVMMBT3906TT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| LM339DTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| LM339EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| FCP380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCP380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| NGTB15N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
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| NGTB25N120FL3WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| NSVBC817-40WT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MC33202DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
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| MC33202VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: SO8
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: SO8
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
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| LM2902DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| LM2902EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| LM2902VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| LM2902VDTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| MC33274ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
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| NVMTSC4D3N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
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| MC78M12ACDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NCV78M12BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| J112-D26Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
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| J112-D27Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
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| J112-D74Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
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| LM1117MPX-50NOPB |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC7805ACD2TR4G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: D2PAK
Output current: 1A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Kind of voltage regulator: fixed; linear
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: D2PAK
Output current: 1A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Kind of voltage regulator: fixed; linear
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| NGTB40N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
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| NVH040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
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| LM393DMR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: Micro8
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: Micro8
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| MBT3904DW1T1H |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
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| NST3904DP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| LM2576TV-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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| LM2576TV-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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| SS8050DTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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| 2SC5200OTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| NSV1C301ET4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Power dissipation: 12.5W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 120...360
Application: automotive industry
Polarisation: bipolar
Case: DPAK
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Power dissipation: 12.5W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 120...360
Application: automotive industry
Polarisation: bipolar
Case: DPAK
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| NSS1C301ET4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Power dissipation: 12.5W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 120...360
Polarisation: bipolar
Case: DPAK
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 12.5W; DPAK
Kind of package: reel; tape
Mounting: SMD
Type of transistor: NPN
Power dissipation: 12.5W
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 120...360
Polarisation: bipolar
Case: DPAK
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| NCV21671SQ025T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 25V/V; 0.019mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 25V/V
Input offset voltage: 0.019mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 25V/V; 0.019mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 25V/V
Input offset voltage: 0.019mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
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| NCV21671SQ050T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 50V/V; 0.012mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 50V/V
Input offset voltage: 12µV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; SC70-6; 50V/V; 0.012mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Gain: 50V/V
Input offset voltage: 12µV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 35µA
Input offset current: 300nA
Number of channels: single
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| NCV21674DMG050R2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 270kHz; Micro8; 50V/V; 0.55mV
Case: Micro8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...150°C
Input offset current: 15µA
Input bias current: 1µA
Input offset voltage: 0.55mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Gain: 50V/V
Bandwidth: 270kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 270kHz; Micro8; 50V/V; 0.55mV
Case: Micro8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...150°C
Input offset current: 15µA
Input bias current: 1µA
Input offset voltage: 0.55mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Gain: 50V/V
Bandwidth: 270kHz
Number of channels: dual
Type of integrated circuit: instrumentation amplifier
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| NCV78M05ABDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV78M05BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| LMV321SN3T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single
Mounting: SMT
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single
Mounting: SMT
Operating temperature: -40...85°C
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| LMV321SQ3T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SC70-5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Mounting: SMT
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SC70-5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: single
Mounting: SMT
Operating temperature: -40...85°C
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| LMV321ISN3T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSOP5; 2.7÷5VDC; reel,tape
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single
Mounting: SMT
Operating temperature: -40...125°C
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| FSL336LRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.8A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 4Ω
Kind of package: tube
Power: 9/20W
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.8A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 4Ω
Kind of package: tube
Power: 9/20W
Application: SMPS
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| FSL306LRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
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| TIP35CG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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| NCV78L08ABDR2G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MC74HC175ADG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HC
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 4
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HC
Technology: CMOS
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.74 EUR |