Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
LMV339DTBR2G | ONSEMI |
![]() Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Operating voltage: 2.7...5V Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Input offset voltage: 9mV Input bias current: 1nA Kind of comparator: universal Number of comparators: 4 Kind of package: reel; tape Input offset current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDMS7680 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28A Pulsed drain current: 80A Power dissipation: 33W Case: Power56 Gate-source voltage: ±20V On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FQL40N50F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Pulsed drain current: 160A Power dissipation: 460W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDC86244 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 6nC On-state resistance: 273mΩ Power dissipation: 1.6W Drain current: 2.3A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 150V Case: SuperSOT-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMC86244 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 5.9nC On-state resistance: 254mΩ Power dissipation: 26W Drain current: 9.4A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 150V Case: WDFN8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() +1 |
FSBB20CH60C | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Technology: Motion SPM® 3 Mounting: THT Operating temperature: -40...125°C Power dissipation: 62W Output current: 20A Number of channels: 6 Collector-emitter voltage: 600V Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Kind of integrated circuit: 3-phase motor controller; IPM Case: SPMMC-027 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74LVXT4051DTRG | ONSEMI |
![]() Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74LVXT4053DTRG | ONSEMI |
![]() Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD Mounting: SMD Family: LVXT Manufacturer series: LVXT Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -6...0V DC; 2.5...6V DC Number of channels: 3 Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Type of integrated circuit: digital Technology: CMOS; TTL Case: TSSOP16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FGB3040G2-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Version: ESD Collector current: 25.6A Gate-emitter voltage: ±10V Collector-emitter voltage: 400V Application: ignition systems |
auf Bestellung 741 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
NCP130AMX180TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD Case: XDFN6 Mounting: SMD Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1.8V Voltage drop: 0.15V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP130 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP130BMX180TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD Case: XDFN6 Mounting: SMD Operating temperature: -40...85°C Output current: 0.3A Output voltage: 1.8V Voltage drop: 0.15V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP130 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
MC74HC1G00DTT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
auf Bestellung 1116 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
MC74HC1G08DFT1G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G08DFT2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
MC74HCT4851ADR2G | ONSEMI |
![]() Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Family: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MC74HCT4852ADR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD Family: HCT Kind of package: reel; tape Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
M74HCT4852ADTR2G | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Family: HCT Kind of package: reel; tape Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Number of channels: 2 Supply voltage: 4...5.5V DC Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of inputs: 5 Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTP125N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
MC14503BDR2G | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Number of inputs: 1 Supply voltage: 3...18V DC Kind of output: 3-state Kind of integrated circuit: 3-state; buffer; hex Type of integrated circuit: digital Technology: CMOS Case: SOIC16 Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MM74HCT574SJX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Mounting: SMD Case: SOP20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Technology: CMOS Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NCP130BMX210TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.1V Output current: 0.3A Case: XDFN6 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Manufacturer series: NCP130 Voltage drop: 0.15V Input voltage: 0.8...5.5V Tolerance: ±1.5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV25256DTHFT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV25256DWHFT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV25256MUW3VTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV25256VE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV25256YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
BAS116LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
BAS116TT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT416 Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
SBAS116LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NSVBAS116LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
1N5956BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 1µA |
auf Bestellung 5386 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
1N5956BG | ONSEMI |
![]() Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FSB50550AS | ONSEMI |
![]() Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V Supply voltage: 300V Output voltage: 500V Frequency: 15kHz Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Output current: 2A |
auf Bestellung 17550 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SMF05CT2G | ONSEMI |
![]() Description: SMF05CT2G |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
NSVRB751S40T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCB125N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTPF125N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 44nC On-state resistance: 0.125Ω Gate-source voltage: ±30V Drain current: 24A Power dissipation: 37W Pulsed drain current: 67A Drain-source voltage: 650V Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCMT125N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FDD86252 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2357 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NUP1301ML3T1G | ONSEMI |
![]() Description: Diode: TVS array; double series; SOT23; reel,tape; ESD Type of diode: TVS array Semiconductor structure: double series Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Kind of package: reel; tape Version: ESD |
auf Bestellung 2855 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
FDD3672 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1552 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NC7S32M5X | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NL17SG32DFT2G | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 0.9...3.6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: NL Manufacturer series: MiniGate |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NC7SZ332P6X | ONSEMI |
![]() Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 3 Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTMFS5C670NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTP165N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 53A Power dissipation: 142W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
FDMS007N08LC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
NUP4301MR6T1G | ONSEMI |
![]() Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD Type of diode: diode arrays Mounting: SMD Case: SC74 Max. off-state voltage: 70V Kind of package: reel; tape Version: ESD Number of channels: 4 |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
PACDN042Y3R | ONSEMI |
![]() Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD Type of diode: TVS array Mounting: SMD Case: SOT23 Max. off-state voltage: 5.5V Kind of package: reel; tape Version: ESD Number of channels: 2 |
auf Bestellung 2172 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTZD3152PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
auf Bestellung 1830 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
NTMTS1D2N08H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 335A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMTS1D5N08H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 125nC On-state resistance: 1.5mΩ Drain-source voltage: 80V Drain current: 255A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMTS1D6N10MCTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMA7672 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 24A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
RFD12N06RLESM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Technology: UltraFET® |
auf Bestellung 1440 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
sm05t1g | ONSEMI |
![]() ![]() Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD Type of diode: TVS array Breakdown voltage: 6.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 17A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SZSM05T1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23 Type of diode: TVS array Breakdown voltage: 6.2...7.3V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FDP22N50N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
MURF860G | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220FP-2 Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
SZBZX84C3V0LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry Leakage current: 10µA Manufacturer series: BZX84C |
auf Bestellung 2363 Stücke: Lieferzeit 14-21 Tag (e) |
|
LMV339DTBR2G |
![]() |
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS7680 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQL40N50F |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDC86244 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMC86244 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: WDFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: WDFN8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSBB20CH60C |
![]() |
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVXT4051DTRG |
![]() |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVXT4053DTRG |
![]() |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGB3040G2-F085 |
![]() |
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Collector current: 25.6A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Collector current: 25.6A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
auf Bestellung 741 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
25+ | 2.97 EUR |
26+ | 2.8 EUR |
250+ | 2.77 EUR |
500+ | 2.7 EUR |
NCP130AMX180TCG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP130BMX180TCG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC1G00DTT1G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1116 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
293+ | 0.24 EUR |
439+ | 0.16 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
MC74HC1G08DFT1G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC1G08DFT2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT4851ADR2G |
![]() |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HCT4852ADR2G |
![]() |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
M74HCT4852ADTR2G |
![]() |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTP125N65S3H |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14503BDR2G |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM74HCT574SJX |
![]() |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP130BMX210TCG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV25256DTHFT3G |
![]() |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV25256DWHFT3G |
![]() |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV25256MUW3VTBG |
![]() |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV25256VE-GT3 |
![]() |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV25256YE-GT3 |
![]() |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS116LT1G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
207+ | 0.34 EUR |
BAS116TT1G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAS116LT1G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBAS116LT3G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5956BRLG |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 5386 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
407+ | 0.18 EUR |
435+ | 0.16 EUR |
468+ | 0.15 EUR |
496+ | 0.14 EUR |
1N5956BG |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSB50550AS |
![]() |
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
auf Bestellung 17550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
450+ | 7.64 EUR |
SMF05CT2G |
![]() |
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
NSVRB751S40T1G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCB125N65S3 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTPF125N65S3H |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCMT125N65S3 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDD86252 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
59+ | 1.22 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
NUP1301ML3T1G |
![]() |
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
313+ | 0.23 EUR |
443+ | 0.16 EUR |
725+ | 0.099 EUR |
FDD3672 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1552 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.2 EUR |
41+ | 1.74 EUR |
56+ | 1.29 EUR |
59+ | 1.22 EUR |
250+ | 1.16 EUR |
NC7S32M5X |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
531+ | 0.13 EUR |
676+ | 0.11 EUR |
758+ | 0.094 EUR |
913+ | 0.078 EUR |
1180+ | 0.061 EUR |
1345+ | 0.053 EUR |
1583+ | 0.045 EUR |
1673+ | 0.043 EUR |
NL17SG32DFT2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
358+ | 0.2 EUR |
444+ | 0.16 EUR |
517+ | 0.14 EUR |
607+ | 0.12 EUR |
1025+ | 0.07 EUR |
1083+ | 0.066 EUR |
NC7SZ332P6X |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
332+ | 0.22 EUR |
414+ | 0.17 EUR |
575+ | 0.12 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
NTMFS5C670NLT1G |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
36+ | 2.02 EUR |
47+ | 1.54 EUR |
50+ | 1.46 EUR |
NTP165N65S3H |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.02 EUR |
19+ | 3.88 EUR |
20+ | 3.72 EUR |
21+ | 3.52 EUR |
FDMS007N08LC |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NUP4301MR6T1G |
![]() |
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
246+ | 0.29 EUR |
288+ | 0.25 EUR |
376+ | 0.19 EUR |
575+ | 0.12 EUR |
642+ | 0.11 EUR |
PACDN042Y3R |
![]() |
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
auf Bestellung 2172 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
332+ | 0.22 EUR |
379+ | 0.19 EUR |
463+ | 0.15 EUR |
695+ | 0.1 EUR |
736+ | 0.097 EUR |
NTZD3152PT1G |
![]() |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
269+ | 0.27 EUR |
338+ | 0.21 EUR |
477+ | 0.15 EUR |
500+ | 0.14 EUR |
NTMTS1D2N08H |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMTS1D5N08H |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMTS1D6N10MCTXG |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMA7672 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RFD12N06RLESM9A |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
69+ | 1.05 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
250+ | 0.71 EUR |
sm05t1g | ![]() |
![]() |
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZSM05T1G |
![]() |
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDP22N50N |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
MURF860G |
![]() |
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZBZX84C3V0LT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 10µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Leakage current: 10µA
Manufacturer series: BZX84C
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
610+ | 0.12 EUR |
695+ | 0.1 EUR |
920+ | 0.078 EUR |
1707+ | 0.042 EUR |
2009+ | 0.036 EUR |
2284+ | 0.031 EUR |
2363+ | 0.03 EUR |