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NCP1380BDR2G NCP1380BDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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MC74ACT240DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62A04BA7960D3&compId=MC74AC240-D.pdf?ci_sign=a1ad4175192233851cb0baae7c091b940c5c99d0 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
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LMV339DTBR2G LMV339DTBR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
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FDMS7680 ONSEMI fdms7680-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FQL40N50F FQL40N50F ONSEMI fql40n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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FDC86244 ONSEMI fdc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
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FDMC86244 ONSEMI fdmc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: WDFN8
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FSBB20CH60C
+1
 		FSBB20CH60C ONSEMI fsbb20ch60c-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
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MC74LVXT4051DTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471500D3&compId=MC74LVXT4051-D.pdf?ci_sign=b617d64f825fd0026a27b9fdbfc91d25985d3b69 Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
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MC74LVXT4053DTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632603CCC20D3&compId=MC74LVXT4053-D.pdf?ci_sign=2caf136b119a7d294123070628e9bada5d8bcdb1 Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
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FGB3040G2-F085 FGB3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Collector current: 25.6A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
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21+3.42 EUR
25+2.97 EUR
26+2.8 EUR
250+2.77 EUR
500+2.7 EUR
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NCP130AMX180TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
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NCP130BMX180TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
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MC74HC1G00DTT1G MC74HC1G00DTT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C585820&compId=MC74HC1G00-D.pdf?ci_sign=25500adb036f3ea7aed9e0aab4e777ab995a7a1b Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1116 Stücke:
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179+0.4 EUR
293+0.24 EUR
439+0.16 EUR
569+0.13 EUR
603+0.12 EUR
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MC74HC1G08DFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HC1G08DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
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MC74HCT4851ADR2G MC74HCT4851ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADAA20D3&compId=MC74HCT4851A-D.pdf?ci_sign=8d18eb8219015ab3c3172c11fa869e7b67d60c5b Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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MC74HCT4852ADR2G MC74HCT4852ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADAB60D3&compId=MC74HCT4851A-D.pdf?ci_sign=9e009955d806b97fc537c16e8e249fb92bc21c26 Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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M74HCT4852ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627E96205A0D3&compId=MC74HCT4851A-D.pdf?ci_sign=4bc721a1ec8d7d42abd28e542a431484728bd500 Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
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NTP125N65S3H ONSEMI ntp125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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MC14503BDR2G MC14503BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5300D3&compId=MC14503B-D.pdf?ci_sign=9e07668e1723414b4879ae2d65db5688ed290b90 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
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MM74HCT574SJX MM74HCT574SJX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADED820&compId=MM74HCT573-D.pdf?ci_sign=e619172a886100e00e4214fb18d9a0d543bab3a6 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HCT
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NCP130BMX210TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
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NV25256DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256MUW3VTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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BAS116LT1G BAS116LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
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207+0.34 EUR
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BAS116TT1G ONSEMI bas116tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G SBAS116LT1G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS116LT3G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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1N5956BRLG 1N5956BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 5386 Stücke:
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407+0.18 EUR
435+0.16 EUR
468+0.15 EUR
496+0.14 EUR
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1N5956BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FSB50550AS ONSEMI fsb50550as-d.pdf Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
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SMF05CT2G ONSEMI smf05c-d.pdf Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 3000 Stücke:
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NSVRB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
Produkt ist nicht verfügbar
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDD86252 FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
59+1.22 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 55
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NUP1301ML3T1G NUP1301ML3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00 Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
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209+0.34 EUR
313+0.23 EUR
443+0.16 EUR
725+0.099 EUR
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FDD3672 FDD3672 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1552 Stücke:
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56+1.29 EUR
59+1.22 EUR
250+1.16 EUR
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NC7S32M5X NC7S32M5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE23AD9F3B8745&compId=NC7S32.pdf?ci_sign=8f09cc14a4feb41de49d4a0f2e536f860dd141e9 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
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531+0.13 EUR
676+0.11 EUR
758+0.094 EUR
913+0.078 EUR
1180+0.061 EUR
1345+0.053 EUR
1583+0.045 EUR
1673+0.043 EUR
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NL17SG32DFT2G NL17SG32DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D5E80D3&compId=NL17SG32-D.pdf?ci_sign=be6677f1d2178d34a34ec5ef3db1ff9bbad7cbf1 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2987 Stücke:
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209+0.34 EUR
358+0.2 EUR
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517+0.14 EUR
607+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
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NC7SZ332P6X NC7SZ332P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAACBC4B6D7E6DC0C7&compId=NC7SZ332.pdf?ci_sign=9ba9041c243bd3e67ad2d3bc8237cc5f04bdb657 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 1945 Stücke:
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193+0.37 EUR
332+0.22 EUR
414+0.17 EUR
575+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 193
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NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 157 Stücke:
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50+1.46 EUR
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NTP165N65S3H NTP165N65S3H ONSEMI ntp165n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
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19+3.88 EUR
20+3.72 EUR
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FDMS007N08LC ONSEMI fdms007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NUP4301MR6T1G NUP4301MR6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2 Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
246+0.29 EUR
288+0.25 EUR
376+0.19 EUR
575+0.12 EUR
642+0.11 EUR
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PACDN042Y3R PACDN042Y3R ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEE1A18029E0CE&compId=PACDN04x.PDF?ci_sign=d9ce101fbe316f81d35daf81cc54beb867ef9674 Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
auf Bestellung 2172 Stücke:
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157+0.46 EUR
332+0.22 EUR
379+0.19 EUR
463+0.15 EUR
695+0.1 EUR
736+0.097 EUR
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NTZD3152PT1G NTZD3152PT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A468CDB64C745&compId=NTZD3152P.PDF?ci_sign=bebe4c44be257e5f5e46cd20d05cd246bd216720 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
auf Bestellung 1830 Stücke:
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269+0.27 EUR
338+0.21 EUR
477+0.15 EUR
500+0.14 EUR
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NTMTS1D2N08H ONSEMI ntmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ONSEMI ntmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ONSEMI ntmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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FDMA7672 ONSEMI fdma7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD12N06RLESM9A RFD12N06RLESM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEBCBDF03DC745&compId=RFD12N06RLESM.pdf?ci_sign=b329f5809fdc790d1cc6e79cb1df143b63b41d5d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
auf Bestellung 1440 Stücke:
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54+1.33 EUR
69+1.05 EUR
92+0.78 EUR
97+0.74 EUR
250+0.71 EUR
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sm05t1g sm05t1g ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 description Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
Produkt ist nicht verfügbar
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SZSM05T1G ONSEMI sm05t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDP22N50N FDP22N50N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE91A81D4CFE259&compId=FDP22N50N.pdf?ci_sign=d78cca91e5c318fcd01fc984ce6f1c626cac85a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
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11+6.51 EUR
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NCP1380BDR2G ncp1380-d.pdf
NCP1380BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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MC74ACT240DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62A04BA7960D3&compId=MC74AC240-D.pdf?ci_sign=a1ad4175192233851cb0baae7c091b940c5c99d0
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
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LMV339DTBR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c
LMV339DTBR2G
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Operating voltage: 2.7...5V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Input offset voltage: 9mV
Input bias current: 1nA
Kind of comparator: universal
Number of comparators: 4
Kind of package: reel; tape
Input offset current: 1nA
Produkt ist nicht verfügbar
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FDMS7680 fdms7680-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FQL40N50F fql40n50f-d.pdf
FQL40N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDC86244 fdc86244-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: SuperSOT-6
Produkt ist nicht verfügbar
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FDMC86244 fdmc86244-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Case: WDFN8
Produkt ist nicht verfügbar
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FSBB20CH60C fsbb20ch60c-d.pdf
FSBB20CH60C
+1
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Produkt ist nicht verfügbar
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MC74LVXT4051DTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6328A471500D3&compId=MC74LVXT4051-D.pdf?ci_sign=b617d64f825fd0026a27b9fdbfc91d25985d3b69
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Produkt ist nicht verfügbar
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MC74LVXT4053DTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632603CCC20D3&compId=MC74LVXT4053-D.pdf?ci_sign=2caf136b119a7d294123070628e9bada5d8bcdb1
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; SMD
Mounting: SMD
Family: LVXT
Manufacturer series: LVXT
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -6...0V DC; 2.5...6V DC
Number of channels: 3
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Type of integrated circuit: digital
Technology: CMOS; TTL
Case: TSSOP16
Produkt ist nicht verfügbar
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FGB3040G2-F085 fgi3040g2_f085-d.pdf
FGB3040G2-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Collector current: 25.6A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 400V
Application: ignition systems
auf Bestellung 741 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
25+2.97 EUR
26+2.8 EUR
250+2.77 EUR
500+2.7 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
NCP130AMX180TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP130BMX180TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; XDFN6; SMD
Case: XDFN6
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 1.8V
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP130
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G00DTT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C585820&compId=MC74HC1G00-D.pdf?ci_sign=25500adb036f3ea7aed9e0aab4e777ab995a7a1b
MC74HC1G00DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
293+0.24 EUR
439+0.16 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC1G08DFT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G08DFT2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT4851ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADAA20D3&compId=MC74HCT4851A-D.pdf?ci_sign=8d18eb8219015ab3c3172c11fa869e7b67d60c5b
MC74HCT4851ADR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT4852ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADAB60D3&compId=MC74HCT4851A-D.pdf?ci_sign=9e009955d806b97fc537c16e8e249fb92bc21c26
MC74HCT4852ADR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
M74HCT4852ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627E96205A0D3&compId=MC74HCT4851A-D.pdf?ci_sign=4bc721a1ec8d7d42abd28e542a431484728bd500
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: HCT
Produkt ist nicht verfügbar
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NTP125N65S3H ntp125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14503BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5300D3&compId=MC14503B-D.pdf?ci_sign=9e07668e1723414b4879ae2d65db5688ed290b90
MC14503BDR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Number of inputs: 1
Supply voltage: 3...18V DC
Kind of output: 3-state
Kind of integrated circuit: 3-state; buffer; hex
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 6
Produkt ist nicht verfügbar
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MM74HCT574SJX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADED820&compId=MM74HCT573-D.pdf?ci_sign=e619172a886100e00e4214fb18d9a0d543bab3a6
MM74HCT574SJX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HCT
Produkt ist nicht verfügbar
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NCP130BMX210TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.1V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.1V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Manufacturer series: NCP130
Voltage drop: 0.15V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV25256DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV25256DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV25256MUW3VTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25256VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25256YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403
BAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
207+0.34 EUR
Mindestbestellmenge: 207
Im Einkaufswagen  Stück im Wert von  UAH
BAS116TT1G bas116tt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SBAS116LT1G bas116lt1-d.pdf
SBAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBAS116LT3G bas116lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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1N5956BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5956BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 5386 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
407+0.18 EUR
435+0.16 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
1N5956BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
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FSB50550AS fsb50550as-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
auf Bestellung 17550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
450+7.64 EUR
Mindestbestellmenge: 450
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SMF05CT2G smf05c-d.pdf
Hersteller: ONSEMI
Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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NSVRB751S40T1G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
Produkt ist nicht verfügbar
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FCMT125N65S3 fcmt125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDD86252 fdd86252-d.pdf
FDD86252
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
59+1.22 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
NUP1301ML3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00
NUP1301ML3T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
443+0.16 EUR
725+0.099 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDD3672 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821
FDD3672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1552 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
41+1.74 EUR
56+1.29 EUR
59+1.22 EUR
250+1.16 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NC7S32M5X pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE23AD9F3B8745&compId=NC7S32.pdf?ci_sign=8f09cc14a4feb41de49d4a0f2e536f860dd141e9
NC7S32M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
531+0.13 EUR
676+0.11 EUR
758+0.094 EUR
913+0.078 EUR
1180+0.061 EUR
1345+0.053 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 531
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NL17SG32DFT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D5E80D3&compId=NL17SG32-D.pdf?ci_sign=be6677f1d2178d34a34ec5ef3db1ff9bbad7cbf1
NL17SG32DFT2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 209
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NC7SZ332P6X pVersion=0046&contRep=ZT&docId=005056AB90B41EDAACBC4B6D7E6DC0C7&compId=NC7SZ332.pdf?ci_sign=9ba9041c243bd3e67ad2d3bc8237cc5f04bdb657
NC7SZ332P6X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
332+0.22 EUR
414+0.17 EUR
575+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 193
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NTMFS5C670NLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87
NTMFS5C670NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
36+2.02 EUR
47+1.54 EUR
50+1.46 EUR
Mindestbestellmenge: 23
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NTP165N65S3H ntp165n65s3h-d.pdf
NTP165N65S3H
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.02 EUR
19+3.88 EUR
20+3.72 EUR
21+3.52 EUR
Mindestbestellmenge: 18
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FDMS007N08LC fdms007n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NUP4301MR6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2
NUP4301MR6T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
246+0.29 EUR
288+0.25 EUR
376+0.19 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
PACDN042Y3R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEE1A18029E0CE&compId=PACDN04x.PDF?ci_sign=d9ce101fbe316f81d35daf81cc54beb867ef9674
PACDN042Y3R
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
auf Bestellung 2172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
332+0.22 EUR
379+0.19 EUR
463+0.15 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 157
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NTZD3152PT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A468CDB64C745&compId=NTZD3152P.PDF?ci_sign=bebe4c44be257e5f5e46cd20d05cd246bd216720
NTZD3152PT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
269+0.27 EUR
338+0.21 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 179
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NTMTS1D2N08H ntmts1d2n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTS1D5N08H ntmts1d5n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTS1D6N10MCTXG ntmts1d6n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMA7672 fdma7672-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD12N06RLESM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEBCBDF03DC745&compId=RFD12N06RLESM.pdf?ci_sign=b329f5809fdc790d1cc6e79cb1df143b63b41d5d
RFD12N06RLESM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
69+1.05 EUR
92+0.78 EUR
97+0.74 EUR
250+0.71 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
sm05t1g description pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
sm05t1g
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
Produkt ist nicht verfügbar
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SZSM05T1G sm05t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP22N50N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE91A81D4CFE259&compId=FDP22N50N.pdf?ci_sign=d78cca91e5c318fcd01fc984ce6f1c626cac85a7
FDP22N50N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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