| Foto | Bezeichnung | Hersteller | Beschreibung |
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ES2D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.66W Leakage current: 0.35mA Capacitance: 18pF |
auf Bestellung 2381 Stücke: Lieferzeit 14-21 Tag (e) |
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| ES2DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTLJS17D0P03P8ZTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -11.7A Power dissipation: 2.4W Case: WDFN6 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -47A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFS012P03P8ZTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -11.7A Power dissipation: 2.4W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 36nC Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -47A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFWS012P03P8ZTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -11.7A Power dissipation: 2.4W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 36nC Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -47A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8187AMT330TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1.2A Case: WDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC164ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: parallel in Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Kind of output: push-pull Delay time: 250ns Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC164ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: TSSOP14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of outputs: 8 Trigger: positive-edge-triggered Kind of output: push-pull Delay time: 250ns Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC164BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC Type of integrated circuit: digital Kind of integrated circuit: parallel in; shift register Mounting: SMD Case: SOIC14 Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V Number of outputs: 8 Trigger: positive-edge-triggered Kind of output: push-pull Number of channels: 1 Number of inputs: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| N93C66BT3ETAG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.7...5.5V Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT93C66VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.8...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV93C66VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV93C66YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FQP9N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BYW29-200G | ONSEMI |
 Category: THT universal diodesDescription: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TL331VSN4T3G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TL331SN4T1G | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR0530 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Mounting: SMD Polarisation: bipolar Kind of transistor: BRT Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Mounting: SMD Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Current gain: 8...15 Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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BD13810STU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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| BD138G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Current gain: 40...250 Mounting: THT Power dissipation: 12.5W Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB5100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape Mounting: SMD Load current: 5A Max. load current: 10A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.98V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR5H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape Mounting: SMD Load current: 5A Max. forward impulse current: 200A Max. off-state voltage: 0.1kV Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.73V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR8H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape Mounting: SMD Load current: 8A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB10100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Load current: 10A Max. load current: 20A Max. forward impulse current: 150A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.95V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MBR30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. forward impulse current: 0.3kA Max. off-state voltage: 0.1kV Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. forward impulse current: 350A Max. off-state voltage: 0.1kV Case: DFN5x6 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.68V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB10100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape Mounting: SMD Load current: 10A Max. load current: 20A Max. forward impulse current: 150A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.95V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB30H100MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. load current: 60A Max. forward impulse current: 0.3kA Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. load current: 60A Max. forward impulse current: 0.3kA Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB8H100MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. load current: 60A Max. forward impulse current: 350A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.76V |
Produkt ist nicht verfügbar |
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Output voltage: 600V Number of channels: 1 Mounting: THT Trigger current: 5mA Slew rate: 1kV/μs Insulation voltage: 4.17kV Manufacturer series: MOC3163M Kind of output: zero voltage crossing driver Type of optocoupler: optotriac |
auf Bestellung 1095 Stücke: Lieferzeit 14-21 Tag (e) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Case: SO4 Electrical mounting: SMT Type of bridge rectifier: single-phase Load current: 0.5A Max. forward impulse current: 35A Max. off-state voltage: 200V Kind of package: reel; tape |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM301ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 10V/μs Input offset voltage: 7.5mV Input bias current: 0.25µA Input offset current: 50nA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC14555BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3 Operating temperature: -55...125°C Technology: CMOS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Case: SOIC16 Number of channels: 2 Supply voltage: 3...18V DC Number of inputs: 3 Family: HEF4000B Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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| FSB50450US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
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| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Operating temperature: -40...150°C Mounting: SMD DC supply current: 0.2mA Output current: 1.2A Operating voltage: 500V Power dissipation: 13.4W Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
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| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Case: PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C DC supply current: 0.2mA Output current: 1.5A Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV |
Produkt ist nicht verfügbar |
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| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Operating temperature: -40...150°C Mounting: THT DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: DIP Type of integrated circuit: driver Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
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| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Operating temperature: -40...150°C Mounting: SMD DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: Gull wing; PowerSMD Type of integrated circuit: driver Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PowerTrench® Mounting: SMD Drain current: -55A Drain-source voltage: -35V Gate charge: 35nC On-state resistance: 19mΩ Gate-source voltage: ±25V Power dissipation: 57W Polarisation: unipolar |
auf Bestellung 2363 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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| NTHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 159nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
Produkt ist nicht verfügbar |
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 |
MC14071BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: tube Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
Produkt ist nicht verfügbar |
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|
|
MC14071BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
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 |
MC14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: TSSOP14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NLV14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
P6KE350A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 350V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Max. forward impulse current: 2A Max. off-state voltage: 300V Leakage current: 5µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Family: HC Number of channels: 6 Kind of integrated circuit: inverter Kind of output: push-pull Mounting: SMD Operating temperature: -55...125°C Quiescent current: 2µA Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V Case: SOIC14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25040VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25040VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TDFN8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
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Im Einkaufswagen Stück im Wert von UAH |
| ES2D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 281+ | 0.25 EUR |
| 348+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 397+ | 0.18 EUR |
| ES2DAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJS17D0P03P8ZTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS012P03P8ZTAG |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS012P03P8ZTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8187AMT330TAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164ADR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC164BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N93C66BT3ETAG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT93C66VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV93C66VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV93C66YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP9N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.08 EUR |
| 22+ | 3.33 EUR |
| 50+ | 3.12 EUR |
| FQPF9N90CT |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.26 EUR |
| 20+ | 3.76 EUR |
| 23+ | 3.15 EUR |
| BYW29-200G | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 61+ | 1.19 EUR |
| 85+ | 0.84 EUR |
| 100+ | 0.72 EUR |
| TL331SN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL331VSN4T3G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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| MBR0530 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MUN5131DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 720+ | 0.099 EUR |
| SMUN5131DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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| BD13810STU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.48 EUR |
| 167+ | 0.43 EUR |
| 188+ | 0.38 EUR |
| 480+ | 0.34 EUR |
| BD138G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NRVB5100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR5H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR8H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
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| NRVB10100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Produkt ist nicht verfügbar
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| MBR30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
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| NRTS30100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB10100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
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| NRVB8H100MFSWFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB8H100MFSWFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS30100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MOC3163M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 117+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 133+ | 0.54 EUR |
| 139+ | 0.52 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.41 EUR |
| MB2S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Case: SO4
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Load current: 0.5A
Max. forward impulse current: 35A
Max. off-state voltage: 200V
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Case: SO4
Electrical mounting: SMT
Type of bridge rectifier: single-phase
Load current: 0.5A
Max. forward impulse current: 35A
Max. off-state voltage: 200V
Kind of package: reel; tape
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| LM301ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14555BDG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| FSB50450US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50250AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50250US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50450AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
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| FSB50825AB |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FSB50825AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
Integrated circuit features: MOSFET
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| FDD6637 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 42+ | 1.73 EUR |
| 47+ | 1.53 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| SZBZX84C10LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| NTHL040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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| NTLJS2103PTBG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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| MC14071BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| MC14071BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| MC14071BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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| NLV14071BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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| P6KE350A |
|
Hersteller: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 350V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. forward impulse current: 2A
Max. off-state voltage: 300V
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 350V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. forward impulse current: 2A
Max. off-state voltage: 300V
Leakage current: 5µA
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| MC74HC04ADR2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
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| NUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
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| SNUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| CAT25040VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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| CAT25040VP2I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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