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TIP36CG TIP36CG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 26 Stücke:
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16+4.6 EUR
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22+3.35 EUR
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TIP36AG TIP36AG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 60 Stücke:
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20+3.72 EUR
24+3.07 EUR
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NTD280N60S5Z ONSEMI ntd280n60s5z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA2029M3T5G ONSEMI 2sa2029m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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MM3Z9V1T1G MM3Z9V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 3153 Stücke:
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715+0.1 EUR
1042+0.069 EUR
1593+0.045 EUR
1924+0.037 EUR
2924+0.024 EUR
3153+0.023 EUR
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MC14014BDG MC14014BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7592C0D3&compId=MC14014B-D.pdf?ci_sign=ed9ec2fb77e360863287d3d74a3ad3ba7ef56d77 Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of package: tube
Operating temperature: -55...125°C
Family: HEF4000B
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Technology: CMOS
auf Bestellung 480 Stücke:
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143+0.5 EUR
202+0.35 EUR
223+0.32 EUR
236+0.3 EUR
249+0.29 EUR
257+0.28 EUR
288+0.27 EUR
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NTMFS08N2D5C ONSEMI ntmfs08n2d5c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
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2SA1416S-TD-E
+1
 		2SA1416S-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
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2SA1416T-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
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BC858BWT1G BC858BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTMFS024N06CT1G ONSEMI NTMFS024N06C-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS015N10MCLT1G ONSEMI ntmfs015n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MRA4004T3G MRA4004T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.18V
Max. load current: 30A
auf Bestellung 3658 Stücke:
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334+0.21 EUR
455+0.16 EUR
560+0.13 EUR
619+0.12 EUR
716+0.1 EUR
810+0.088 EUR
1000+0.077 EUR
2500+0.066 EUR
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NCP308MT300TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MOC3023M MOC3023M ONSEMI MOC3020M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
auf Bestellung 262 Stücke:
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97+0.74 EUR
141+0.51 EUR
173+0.41 EUR
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FDH45N50F-F133 FDH45N50F-F133 ONSEMI fdh45n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
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12+6.05 EUR
14+5.41 EUR
30+5.36 EUR
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1SMB5923BT3G 1SMB5923BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2896 Stücke:
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295+0.24 EUR
353+0.2 EUR
391+0.18 EUR
455+0.16 EUR
511+0.14 EUR
575+0.12 EUR
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1SMB5942BT3G 1SMB5942BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2273 Stücke:
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239+0.3 EUR
321+0.22 EUR
371+0.19 EUR
410+0.17 EUR
459+0.16 EUR
550+0.13 EUR
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2SA1552S-TL-E ONSEMI en2262-d.pdf ONSM-S-A0000136312-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
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2SA1552S-TL-H ONSEMI en2262-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
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2SA1593S-TL-E ONSEMI en2511-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
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NTR5105PT1G NTR5105PT1G ONSEMI ntr5105p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1144 Stücke:
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358+0.2 EUR
544+0.13 EUR
782+0.092 EUR
906+0.079 EUR
955+0.075 EUR
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BSP52T1G BSP52T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD7DC9F5AF8469&compId=BSP52.PDF?ci_sign=f8f7489c22d6fe1d0f211ca7b159e04be9517d45 description Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 770 Stücke:
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173+0.41 EUR
268+0.27 EUR
315+0.23 EUR
500+0.2 EUR
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BSP52T3G BSP52T3G ONSEMI bsp52t1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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MMSZ5248BT1G MMSZ5248BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1779 Stücke:
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625+0.11 EUR
944+0.076 EUR
1397+0.051 EUR
1651+0.043 EUR
1779+0.04 EUR
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SZMMSZ5248BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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DF005S DF005S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F719CFE3C74469&compId=DF005S.pdf?ci_sign=71de7becbc26bb3965fe3784af153c93ce6e0759 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 362 Stücke:
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100+0.72 EUR
115+0.62 EUR
162+0.44 EUR
172+0.42 EUR
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NTBG060N065SC1 ONSEMI ntbg060n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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FCD600N60Z ONSEMI fcd600n60z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCD600N65S3R0 ONSEMI fcd600n65s3r0-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7660AS ONSEMI fdms7660as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0310AS ONSEMI fdms0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC33071DR2G MC33071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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117+0.61 EUR
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NTP067N65S3H ONSEMI ntp067n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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NCP551SN50T1G ONSEMI ncp551-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI fqu2n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC540DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA380D3&compId=MC74VHC540-D.pdf?ci_sign=d6d8a5a088e1f65f006fdd98c1bd7a0fbbed35c9 Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
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MBRS240LT3G MBRS240LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
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219+0.33 EUR
258+0.28 EUR
295+0.24 EUR
334+0.21 EUR
388+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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RB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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807+0.089 EUR
1083+0.066 EUR
1232+0.058 EUR
1634+0.044 EUR
1839+0.039 EUR
1961+0.036 EUR
3000+0.033 EUR
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NTR4170NT1G NTR4170NT1G ONSEMI ntr4170n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
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167+0.43 EUR
226+0.32 EUR
266+0.27 EUR
388+0.18 EUR
439+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 167
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NSVJ5908DSG5T1G ONSEMI nsvj5908dsg5-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
Produkt ist nicht verfügbar
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2N6488G 2N6488G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
auf Bestellung 276 Stücke:
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70+1.03 EUR
91+0.79 EUR
108+0.67 EUR
116+0.62 EUR
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MMSZ5V6T1G MMSZ5V6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
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1042+0.069 EUR
1454+0.049 EUR
1701+0.042 EUR
2075+0.034 EUR
2428+0.029 EUR
2841+0.025 EUR
2942+0.024 EUR
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MM3Z5V6T1G MM3Z5V6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
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736+0.097 EUR
947+0.076 EUR
1158+0.062 EUR
1417+0.05 EUR
2233+0.032 EUR
2689+0.027 EUR
3334+0.021 EUR
Mindestbestellmenge: 500
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NTMYS014N06CLTWG ONSEMI ntmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3081M MOC3081M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281 Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Produkt ist nicht verfügbar
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LM285Z-2.5RAG LM285Z-2.5RAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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NSR05F40NXT5G NSR05F40NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BD4425A48EA0CE&compId=NSR05F40NXT5G.PDF?ci_sign=05f8c00715ec2118bb81283864ab98ce8af480e0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
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NSR0530P2T5G ONSEMI nsr0530p2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
Produkt ist nicht verfügbar
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NSR05F30NXT5G ONSEMI nsr05f30.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
Produkt ist nicht verfügbar
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1SMB5956BT3G 1SMB5956BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1188 Stücke:
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295+0.24 EUR
417+0.17 EUR
506+0.14 EUR
618+0.12 EUR
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1SMB5955BT3G 1SMB5955BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2380 Stücke:
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209+0.34 EUR
261+0.27 EUR
290+0.25 EUR
382+0.19 EUR
432+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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NTBG025N065SC1 ONSEMI ntbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTMYS025N06CLTWG ONSEMI ntmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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NTP110N65S3HF ONSEMI ntp110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTMT110N65S3HF ONSEMI ntmt110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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TIP36CG tip35a-d.pdf
TIP36CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
16+4.6 EUR
20+3.66 EUR
22+3.35 EUR
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TIP36AG tip35a-d.pdf
TIP36AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 60 Stücke:
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Anzahl Preis
20+3.72 EUR
24+3.07 EUR
30+2.65 EUR
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NTD280N60S5Z ntd280n60s5z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA2029M3T5G 2sa2029m3-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MM3Z9V1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z9V1T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 3153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1593+0.045 EUR
1924+0.037 EUR
2924+0.024 EUR
3153+0.023 EUR
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MC14014BDG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7592C0D3&compId=MC14014B-D.pdf?ci_sign=ed9ec2fb77e360863287d3d74a3ad3ba7ef56d77
MC14014BDG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of package: tube
Operating temperature: -55...125°C
Family: HEF4000B
Mounting: SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Technology: CMOS
auf Bestellung 480 Stücke:
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Anzahl Preis
143+0.5 EUR
202+0.35 EUR
223+0.32 EUR
236+0.3 EUR
249+0.29 EUR
257+0.28 EUR
288+0.27 EUR
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NTMFS08N2D5C ntmfs08n2d5c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Produkt ist nicht verfügbar
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2SA1416S-TD-E 2sa1416-d.pdf
2SA1416S-TD-E
+1
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Produkt ist nicht verfügbar
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2SA1416T-TD-E 2sa1416-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC858BWT1G bc856bwt1-d.pdf
BC858BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NTMFS024N06CT1G NTMFS024N06C-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS015N10MCLT1G ntmfs015n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N7002 2N7000_2N7002_NDS7002A.PDF
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MRA4004T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4004T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Max. off-state voltage: 0.4kV
Load current: 1A
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.18V
Max. load current: 30A
auf Bestellung 3658 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
560+0.13 EUR
619+0.12 EUR
716+0.1 EUR
810+0.088 EUR
1000+0.077 EUR
2500+0.066 EUR
Mindestbestellmenge: 334
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NCP308MT300TBG ncp308-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
Produkt ist nicht verfügbar
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MOC3023M MOC3020M-ONS.PDF
MOC3023M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
141+0.51 EUR
173+0.41 EUR
Mindestbestellmenge: 97
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FDH45N50F-F133 fdh45n50f-d.pdf
FDH45N50F-F133
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
12+6.05 EUR
14+5.41 EUR
30+5.36 EUR
Mindestbestellmenge: 10
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1SMB5923BT3G 1SMB59xxBT3G.PDF
1SMB5923BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
391+0.18 EUR
455+0.16 EUR
511+0.14 EUR
575+0.12 EUR
Mindestbestellmenge: 295
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1SMB5942BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5942BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
321+0.22 EUR
371+0.19 EUR
410+0.17 EUR
459+0.16 EUR
550+0.13 EUR
Mindestbestellmenge: 239
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2SA1552S-TL-E en2262-d.pdf ONSM-S-A0000136312-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
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2SA1552S-TL-H en2262-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 1.5A
Power dissipation: 1W
Collector-emitter voltage: 160V
Current gain: 140...280
Produkt ist nicht verfügbar
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2SA1593S-TL-E en2511-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 2A
Power dissipation: 1W
Collector-emitter voltage: 100V
Current gain: 140...280
Produkt ist nicht verfügbar
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NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
544+0.13 EUR
782+0.092 EUR
906+0.079 EUR
955+0.075 EUR
Mindestbestellmenge: 358
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BSP52T1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD7DC9F5AF8469&compId=BSP52.PDF?ci_sign=f8f7489c22d6fe1d0f211ca7b159e04be9517d45
BSP52T1G
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
173+0.41 EUR
268+0.27 EUR
315+0.23 EUR
500+0.2 EUR
Mindestbestellmenge: 120
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BSP52T3G bsp52t1-d.pdf
BSP52T3G
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5248BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5248BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1779 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
944+0.076 EUR
1397+0.051 EUR
1651+0.043 EUR
1779+0.04 EUR
Mindestbestellmenge: 625
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SZMMSZ5248BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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DF005S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F719CFE3C74469&compId=DF005S.pdf?ci_sign=71de7becbc26bb3965fe3784af153c93ce6e0759
DF005S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
115+0.62 EUR
162+0.44 EUR
172+0.42 EUR
Mindestbestellmenge: 100
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NTBG060N065SC1 ntbg060n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Produkt ist nicht verfügbar
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FCD600N60Z fcd600n60z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCD600N65S3R0 fcd600n65s3r0-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS7660AS fdms7660as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0310AS fdms0310as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC33071DR2G mc34071-d.pdf
MC33071DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2339 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
117+0.61 EUR
Mindestbestellmenge: 112
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NTP067N65S3H ntp067n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP551SN50T1G ncp551-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC540DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E633C86DA380D3&compId=MC74VHC540-D.pdf?ci_sign=d6d8a5a088e1f65f006fdd98c1bd7a0fbbed35c9
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Family: VHC
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBRS240LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe
MBRS240LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
219+0.33 EUR
258+0.28 EUR
295+0.24 EUR
334+0.21 EUR
388+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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RB751S40T1G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 3791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
1083+0.066 EUR
1232+0.058 EUR
1634+0.044 EUR
1839+0.039 EUR
1961+0.036 EUR
3000+0.033 EUR
Mindestbestellmenge: 556
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NTR4170NT1G ntr4170n-d.pdf
NTR4170NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
226+0.32 EUR
266+0.27 EUR
388+0.18 EUR
439+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 167
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NSVJ5908DSG5T1G nsvj5908dsg5-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
Produkt ist nicht verfügbar
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2N6488G 2n6487-d.pdf
2N6488G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
91+0.79 EUR
108+0.67 EUR
116+0.62 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5V6T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ5V6T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
auf Bestellung 6295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1454+0.049 EUR
1701+0.042 EUR
2075+0.034 EUR
2428+0.029 EUR
2841+0.025 EUR
2942+0.024 EUR
Mindestbestellmenge: 715
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MM3Z5V6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z5V6T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6012 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.097 EUR
947+0.076 EUR
1158+0.062 EUR
1417+0.05 EUR
2233+0.032 EUR
2689+0.027 EUR
3334+0.021 EUR
Mindestbestellmenge: 500
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NTMYS014N06CLTWG ntmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3081M pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281
MOC3081M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Produkt ist nicht verfügbar
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LM285Z-2.5RAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM285Z-2.5RAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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NSR05F40NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BD4425A48EA0CE&compId=NSR05F40NXT5G.PDF?ci_sign=05f8c00715ec2118bb81283864ab98ce8af480e0
NSR05F40NXT5G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DSN0402-2; SMD; 40V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.46V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Case: DSN0402-2
Produkt ist nicht verfügbar
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NSR0530P2T5G nsr0530p2-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.62V
Load current: 0.5A
Max. off-state voltage: 30V
Case: SOD923
Produkt ist nicht verfügbar
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NSR05F30NXT5G nsr05f30.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 30V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Case: 0402
Produkt ist nicht verfügbar
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1SMB5956BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5956BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 200V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
417+0.17 EUR
506+0.14 EUR
618+0.12 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5955BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5955BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
261+0.27 EUR
290+0.25 EUR
382+0.19 EUR
432+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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NTBG025N065SC1 ntbg025n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTMYS025N06CLTWG ntmys025n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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NTP110N65S3HF ntp110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTMT110N65S3HF ntmt110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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