Foto | Bezeichnung | Hersteller | Beschreibung |
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NSVRB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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MM3Z3V6T1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 6901 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5223BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 75µA Manufacturer series: MMBZ52xxBLT1G |
auf Bestellung 2882 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3647S-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Collector current: 2A Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Case: SOT89 Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Power dissipation: 1.5W |
auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Technology: TTL Operating temperature: -40...85°C Quiescent current: 500nA Number of channels: 2 Supply voltage: 1.65...4.5V DC Case: MicroPak10 Type of integrated circuit: analog switch |
Produkt ist nicht verfügbar |
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BAS16HT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 36A Leakage current: 1µA Power dissipation: 0.2W Max. load current: 0.2A |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVXT4052DTG | ONSEMI |
![]() Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
Produkt ist nicht verfügbar |
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MC74LVXT4051DR2G | ONSEMI |
![]() Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SO16 Supply voltage: 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MC74LVXT4051DTR2G | ONSEMI |
![]() Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
Produkt ist nicht verfügbar |
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MMBT6428LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23 Mounting: SMD Type of transistor: NPN Kind of transistor: RF Case: SOT23 Collector current: 0.2A Power dissipation: 0.225/0.3W Collector-emitter voltage: 50V Current gain: 250...650 Frequency: 700MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS3201T3G | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 0.59V Load current: 3A Max. off-state voltage: 200V Type of diode: Schottky rectifying |
auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC132DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AC |
Produkt ist nicht verfügbar |
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KSA1281YTA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Case: TO92 Formed Current gain: 120...240 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz Power dissipation: 1W |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHCT240AMTCX | ONSEMI |
![]() Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: VHCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FOD817B3S | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG045N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 184A Power dissipation: 121W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTBL045N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 51A Pulsed drain current: 182A Power dissipation: 174W Case: H-PSOF8L Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTTFS030N06CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N5388BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM120LT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Load current: 1A Max. load current: 2A Max. off-state voltage: 20V Max. forward impulse current: 50A Case: DO216AA |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP432BVSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C4V7LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C Application: automotive industry |
auf Bestellung 5425 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C4V7ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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NTJS3157NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 60mΩ Power dissipation: 1W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NLAS3157MX3TCG | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
Produkt ist nicht verfügbar |
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BAS19LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Capacitance: 5pF Max. forward voltage: 1V |
auf Bestellung 6071 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBAS19LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FFSH15120ADN-F155 | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Kind of package: tube Load current: 15A Max. off-state voltage: 1.2kV Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
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MOC3031M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC303XM Output voltage: 250V |
auf Bestellung 1769 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G132DFT1G | ONSEMI |
![]() Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NCP51820AMNTWG | ONSEMI |
![]() Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Mounting: SMD Operating temperature: -40...125°C Output current: -2...1A Supply voltage: 9...17V DC Voltage class: 650V Type of integrated circuit: driver Technology: GaN Case: QFN15 Kind of integrated circuit: gate driver; high-side; low-side |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
1N5383BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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HUF75339P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Technology: UltraFET® Polarisation: unipolar Gate charge: 130nC On-state resistance: 12mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 75A Power dissipation: 200W Case: TO220AB Kind of channel: enhancement |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DR2G | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Active logical level: low Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: reel; tape Case: SO8 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) |
auf Bestellung 714 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33172DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Number of channels: 2 |
auf Bestellung 2177 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164P-5G | ONSEMI |
![]() ![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: THT Operating temperature: -40...125°C Active logical level: low Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: bulk Case: TO92 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) |
auf Bestellung 1232 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33161DG | ONSEMI |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Mounting: SMD Operating temperature: -40...105°C Active logical level: low Kind of RESET output: open collector DC supply current: 560µA Maximum output current: 20mA Supply voltage: 2...40V DC Threshold on-voltage: 1.27V Kind of package: tube Case: SO8 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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MC34152DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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ESD8008MUTAG | ONSEMI |
![]() Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 5.5...8.5V Mounting: SMD Case: uDFN14 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Number of channels: 8 |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB86563-F085 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 126nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FSB50450AS | ONSEMI |
![]() Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V Operating temperature: -40...150°C Mounting: SMD Case: Gull wing; PowerSMD Output current: 1.5A Supply voltage: 300V Type of integrated circuit: driver Integrated circuit features: MOSFET |
auf Bestellung 11491 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS015N04CTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDD86250 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Drain-source voltage: 150V Drain current: 27A Power dissipation: 132W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhancement Polarisation: unipolar Kind of package: reel; tape Pulsed drain current: 164A |
auf Bestellung 2401 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1819 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SBAS16LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BD13810STU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
auf Bestellung 1248 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ5241BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: MMBZ52xxBLT1G Application: automotive industry |
Produkt ist nicht verfügbar |
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FDC6561AN | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 152mΩ Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC5614P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 24nC Technology: PowerTrench® |
auf Bestellung 2688 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6327C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Drain current: 2.7/-1.9A On-state resistance: 0.13/0.27Ω Power dissipation: 0.96W Gate-source voltage: ±8V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 20/-20V |
auf Bestellung 1732 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7003P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Gate charge: 2.2nC Power dissipation: 0.96W On-state resistance: 10Ω Gate-source voltage: ±20V Case: SuperSOT-6 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6321C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Technology: PowerTrench® Gate charge: 2.3/1.5nC Drain current: 0.68/-0.46A On-state resistance: 720/1220mΩ Power dissipation: 0.9W Gate-source voltage: ±8V Drain-source voltage: 25/-25V Polarisation: unipolar |
auf Bestellung 1429 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6333C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±16/±25V On-state resistance: 150/220mΩ Mounting: SMD Gate charge: 6.6/5.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® |
auf Bestellung 1960 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC658AP | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±25V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 8.1nC Technology: PowerTrench® |
auf Bestellung 2611 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4685T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Leakage current: 7.5µA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 3.6V Manufacturer series: MMSZ4xxT1G |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5375BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N5375BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MC74HC377ADTR2G | ONSEMI |
![]() Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Family: HC Technology: CMOS Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N5374BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 0.5µA Power dissipation: 5W Tolerance: ±5% Zener voltage: 75V Manufacturer series: 1N53xxB Kind of package: bulk |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVRB521S30T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM3Z3V6T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6901 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
574+ | 0.12 EUR |
807+ | 0.089 EUR |
944+ | 0.076 EUR |
1169+ | 0.061 EUR |
1651+ | 0.043 EUR |
2464+ | 0.029 EUR |
3449+ | 0.021 EUR |
3650+ | 0.02 EUR |
3788+ | 0.019 EUR |
MMBZ5223BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 75µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2882 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
581+ | 0.12 EUR |
758+ | 0.094 EUR |
863+ | 0.083 EUR |
1619+ | 0.044 EUR |
1977+ | 0.036 EUR |
2591+ | 0.028 EUR |
2882+ | 0.024 EUR |
2SC3647S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Power dissipation: 1.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Power dissipation: 1.5W
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
106+ | 0.68 EUR |
198+ | 0.36 EUR |
209+ | 0.34 EUR |
FSA2269L10X |
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS16HT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 36A
Leakage current: 1µA
Power dissipation: 0.2W
Max. load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 36A
Leakage current: 1µA
Power dissipation: 0.2W
Max. load current: 0.2A
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.017 EUR |
MC74LVXT4052DTG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVXT4051DR2G |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVXT4051DTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT6428LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Frequency: 700MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Frequency: 700MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
725+ | 0.099 EUR |
977+ | 0.073 EUR |
1095+ | 0.065 EUR |
1916+ | 0.037 EUR |
2025+ | 0.035 EUR |
MBRS3201T3G | ![]() |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Load current: 3A
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Load current: 3A
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
90+ | 0.8 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
500+ | 0.5 EUR |
MC74AC132DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KSA1281YTA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Power dissipation: 1W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Power dissipation: 1W
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
131+ | 0.55 EUR |
188+ | 0.38 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
74VHCT240AMTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD817B3S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.13 EUR |
NTBG045N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTBL045N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS030N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5388BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
162+ | 0.44 EUR |
178+ | 0.4 EUR |
296+ | 0.24 EUR |
313+ | 0.23 EUR |
500+ | 0.22 EUR |
MBRM120LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
249+ | 0.29 EUR |
311+ | 0.23 EUR |
319+ | 0.22 EUR |
500+ | 0.21 EUR |
NCP432BVSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
194+ | 0.37 EUR |
219+ | 0.33 EUR |
256+ | 0.28 EUR |
363+ | 0.2 EUR |
385+ | 0.19 EUR |
SZBZX84C4V7LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 5425 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
491+ | 0.15 EUR |
575+ | 0.12 EUR |
977+ | 0.073 EUR |
1254+ | 0.057 EUR |
2067+ | 0.035 EUR |
2440+ | 0.029 EUR |
2646+ | 0.027 EUR |
SZBZX84C4V7ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTJS3157NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLAS3157MX3TCG |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAS19LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Capacitance: 5pF
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Capacitance: 5pF
Max. forward voltage: 1V
auf Bestellung 6071 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
527+ | 0.14 EUR |
782+ | 0.092 EUR |
878+ | 0.082 EUR |
1158+ | 0.062 EUR |
1337+ | 0.053 EUR |
1993+ | 0.036 EUR |
2942+ | 0.024 EUR |
3106+ | 0.023 EUR |
NSVBAS19LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FFSH15120ADN-F155 |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Load current: 15A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Load current: 15A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MOC3031M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Output voltage: 250V
auf Bestellung 1769 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
100+ | 0.72 EUR |
112+ | 0.64 EUR |
116+ | 0.62 EUR |
119+ | 0.6 EUR |
123+ | 0.58 EUR |
MC74VHC1G132DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP51820AMNTWG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
Voltage class: 650V
Type of integrated circuit: driver
Technology: GaN
Case: QFN15
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
Voltage class: 650V
Type of integrated circuit: driver
Technology: GaN
Case: QFN15
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5383BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HUF75339P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
44+ | 1.66 EUR |
48+ | 1.52 EUR |
49+ | 1.47 EUR |
52+ | 1.39 EUR |
MC33161DR2G |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
80+ | 0.9 EUR |
87+ | 0.83 EUR |
MC33172DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Number of channels: 2
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
175+ | 0.41 EUR |
196+ | 0.37 EUR |
228+ | 0.31 EUR |
252+ | 0.28 EUR |
327+ | 0.22 EUR |
348+ | 0.21 EUR |
MC33164P-5G | ![]() |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
auf Bestellung 1232 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
137+ | 0.52 EUR |
151+ | 0.47 EUR |
MC33161DG |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Mounting: SMD
Operating temperature: -40...105°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 560µA
Maximum output current: 20mA
Supply voltage: 2...40V DC
Threshold on-voltage: 1.27V
Kind of package: tube
Case: SO8
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.53 EUR |
70+ | 1.03 EUR |
80+ | 0.9 EUR |
84+ | 0.86 EUR |
87+ | 0.83 EUR |
MC34152DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ESD8008MUTAG |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.5...8.5V
Mounting: SMD
Case: uDFN14
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.5...8.5V
Mounting: SMD
Case: uDFN14
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Number of channels: 8
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
98+ | 0.73 EUR |
169+ | 0.42 EUR |
180+ | 0.4 EUR |
FDB86563-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSB50450AS |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Operating temperature: -40...150°C
Mounting: SMD
Case: Gull wing; PowerSMD
Output current: 1.5A
Supply voltage: 300V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Operating temperature: -40...150°C
Mounting: SMD
Case: Gull wing; PowerSMD
Output current: 1.5A
Supply voltage: 300V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
auf Bestellung 11491 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
450+ | 7.25 EUR |
NTTFS015N04CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDD86250 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
auf Bestellung 2401 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
42+ | 1.73 EUR |
44+ | 1.63 EUR |
250+ | 1.6 EUR |
500+ | 1.57 EUR |
SBAS16LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
554+ | 0.13 EUR |
676+ | 0.11 EUR |
758+ | 0.094 EUR |
1169+ | 0.061 EUR |
1183+ | 0.06 EUR |
1263+ | 0.057 EUR |
BAS16LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAS16LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BD13810STU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
151+ | 0.48 EUR |
167+ | 0.43 EUR |
191+ | 0.38 EUR |
202+ | 0.35 EUR |
480+ | 0.34 EUR |
SZMMBZ5241BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDC6561AN |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
93+ | 0.78 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
FDC5614P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 24nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 24nC
Technology: PowerTrench®
auf Bestellung 2688 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
97+ | 0.74 EUR |
108+ | 0.66 EUR |
154+ | 0.47 EUR |
248+ | 0.29 EUR |
262+ | 0.27 EUR |
FDC6327C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Drain current: 2.7/-1.9A
On-state resistance: 0.13/0.27Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20/-20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Drain current: 2.7/-1.9A
On-state resistance: 0.13/0.27Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 20/-20V
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
75+ | 0.96 EUR |
100+ | 0.72 EUR |
250+ | 0.29 EUR |
265+ | 0.27 EUR |
NDC7003P |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
205+ | 0.35 EUR |
257+ | 0.28 EUR |
300+ | 0.24 EUR |
511+ | 0.14 EUR |
544+ | 0.13 EUR |
FDC6321C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Gate charge: 2.3/1.5nC
Drain current: 0.68/-0.46A
On-state resistance: 720/1220mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain-source voltage: 25/-25V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Gate charge: 2.3/1.5nC
Drain current: 0.68/-0.46A
On-state resistance: 720/1220mΩ
Power dissipation: 0.9W
Gate-source voltage: ±8V
Drain-source voltage: 25/-25V
Polarisation: unipolar
auf Bestellung 1429 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
111+ | 0.64 EUR |
126+ | 0.57 EUR |
197+ | 0.36 EUR |
209+ | 0.34 EUR |
500+ | 0.33 EUR |
FDC6333C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
auf Bestellung 1960 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
83+ | 0.86 EUR |
106+ | 0.68 EUR |
250+ | 0.29 EUR |
265+ | 0.27 EUR |
1500+ | 0.26 EUR |
FDC658AP |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 8.1nC
Technology: PowerTrench®
auf Bestellung 2611 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
111+ | 0.64 EUR |
150+ | 0.48 EUR |
232+ | 0.31 EUR |
246+ | 0.29 EUR |
1000+ | 0.28 EUR |
MMSZ4685T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1N5375BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5375BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MC74HC377ADTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5374BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
169+ | 0.42 EUR |
313+ | 0.23 EUR |
332+ | 0.22 EUR |