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NTLJS17D0P03P8ZTAG

NTLJS17D0P03P8ZTAG onsemi

ntljs17d0p03p8z-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTLJS17D0P03P8ZTAG onsemi

Description: MOSFET P-CH 30V 7A 6PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).

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NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG onsemi ntljs17d0p03p8z-d.pdf Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTLJS17D0P03P8ZTAG ON Semiconductor ntljs17d0p03p8z-d.pdf
auf Bestellung 1320 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
NTLJS17D0P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.62 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 1320 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH