BD13810STU ON Semiconductor
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1346+ | 0.4 EUR |
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Technische Details BD13810STU ON Semiconductor
Description: TRANS PNP 60V 1.5A TO-126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.25 W.
Weitere Produktangebote BD13810STU nach Preis ab 0.34 EUR bis 1.6 EUR
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BD13810STU | Hersteller : ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
auf Bestellung 1163 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13810STU | Hersteller : Fairchild Semiconductor |
Description: TRANS PNP 60V 1.5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.25 W |
auf Bestellung 3626 Stücke: Lieferzeit 10-14 Tag (e) |
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BD13810STU | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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BD13810STU | Hersteller : onsemi |
Description: TRANS PNP 60V 1.5A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.25 W |
auf Bestellung 1535 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD13810STU | Hersteller : ONSEMI |
Description: ONSEMI - BD13810STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3626 Stücke: Lieferzeit 14-21 Tag (e) |