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NCP81080DR2G NCP81080DR2G ONSEMI ncp81080-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Impulse rise time: 19ns
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
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SS12 SS12 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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BSS123 BSS123 ONSEMI BSS123-FAI.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.5nC
Features of semiconductor devices: logic level
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1N5408G 1N5408G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: bulk
Max. forward voltage: 1V
Leakage current: 50µA
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1N5407G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Load current: 3A
Kind of package: bulk
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
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SBC857BDW1T1G SBC857BDW1T1G ONSEMI BC85xBDW1T1.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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1N4148WT 1N4148WT ONSEMI 1N4x48WT_1N914BWT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Case: SOD523F
Capacitance: 4pF
Max. load current: 0.2A
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BAT54XV2T1G BAT54XV2T1G ONSEMI BAT54XV2T1-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
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FXMAR2102UMX FXMAR2102UMX ONSEMI FXMAR2102L8X.pdf Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MLP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
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BC639 BC639 ONSEMI BC635-D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power: 0.8W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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SS8550 SS8550 ONSEMI SS8550.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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TIP41C-TU TIP41C-TU ONSEMI TIP41A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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2N5401G 2N5401G ONSEMI 7553200.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC550CG BC550CG ONSEMI BC550C-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 300MHz
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MC74ACT74DR2G MC74ACT74DR2G ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
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LM358ADR2G LM358ADR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
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MOC3021M MOC3021M ONSEMI MOC3020M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC302XM
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KSD882YSTU ONSEMI KSD882.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Current gain: 160...320
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1N914TR 1N914TR ONSEMI 1N914-D.PDF 1n914.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; reel,tape; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Reverse recovery time: 4ns
Leakage current: 50µA
Capacitance: 4pF
Max. forward impulse current: 4A
Max. forward voltage: 1V
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1N4744A 1N4744A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
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74ACT139SC 74ACT139SC ONSEMI 74ACT139-D.PDF 74act139-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
Family: ACT
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74ACT32SC 74ACT32SC ONSEMI 74ACT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
Family: ACT
Kind of gate: OR
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H11L1SVM H11L1SVM ONSEMI H11L3M-D.PDF Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Manufacturer series: H11L1
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Output voltage: 0...16V
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H11L1VM H11L1VM ONSEMI H11L3M-D.PDF Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate; logic
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Manufacturer series: H11L1
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Output voltage: 0...16V
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MOC3052VM MOC3052VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3052M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3052M
Slew rate: 1kV/μs
Number of channels: 1
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MOC3063SM MOC3063SM ONSEMI moc3163m-d.pdf dd93230-moc306x-050318.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3063M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 1.5kV/μs
Max. off-state voltage: 6V
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MOC3063SVM ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3063M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 1.5kV/μs
Max. off-state voltage: 6V
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MOC3061SR2M MOC3061SR2M ONSEMI moc3163m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3061M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Number of channels: 1
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MOC3083TVM MOC3083TVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3083M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3083M
Slew rate: 1.5kV/μs
Number of channels: 1
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MOC8050SR2VM MOC8050SR2VM ONSEMI MOC8021M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
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MOC3041SM MOC3041SM ONSEMI MOC3043M-D.PDF MOC3040_41_42_43.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
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MOC3041SR2M MOC3041SR2M ONSEMI MOC3043M-D.PDF Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
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FXMA2102UMX FXMA2102UMX ONSEMI FXMA2102L8X.pdf Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Number of inputs: 2
Kind of package: reel; tape
Case: UQFN8
Number of outputs: 2
Frequency: 37MHz
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4N35TVM ONSEMI 4N37M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 2µs
Turn-off time: 2µs
Manufacturer series: 4N3X
Max. off-state voltage: 6V
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FGD5T120SH FGD5T120SH ONSEMI fgd5t120sh-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 28W
Case: DPAK
Gate-emitter voltage: ±25V
Pulsed collector current: 12.5A
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
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MOC3022SR2M MOC3022SR2M ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3022TVM ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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1N4001G 1N4001G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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KSC945YTA KSC945YTA ONSEMI KSC945.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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KSB772YS KSB772YS ONSEMI KSB772.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 7A
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Frequency: 80MHz
Collector current: 3A
Mounting: THT
Collector-emitter voltage: 30V
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KSC1815YTA KSC1815YTA ONSEMI KSC1815.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Power dissipation: 0.4W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 80MHz
Collector current: 0.15A
Mounting: THT
Collector-emitter voltage: 50V
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SBC857BWT1G SBC857BWT1G ONSEMI BC85xBWT1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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KSD1691GS KSD1691GS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
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KSD1691GSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1691YS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1691YSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616AGBU ONSEMI KSD1616A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.75W
Case: TO92
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Pulsed collector current: 2A
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NLSV1T34DFT2G NLSV1T34DFT2G ONSEMI NLSV1T34DFT2G.PDF Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: SOT353
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Quiescent current: 2µA
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1N4004G 1N4004G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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6N136VM 6N136VM ONSEMI HCPL2530M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-off time: 260ns
Manufacturer series: 6N136M
Number of pins: 8
Max. off-state voltage: 5V
Turn-on time: 250ns
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6N137SM 6N137SM ONSEMI 4N35SM.pdf 6N137SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Insulation voltage: 5kV
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6N136SM ONSEMI HCPL2530M-D.PDF DD93217-6N135_136-ICPL4502_4503-240717.pdf Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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FXMA2104UMX FXMA2104UMX ONSEMI FXMA2104UMX.pdf Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MLP12
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
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1N4005G 1N4005G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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UF4007 UF4007 ONSEMI UF4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO41
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel; tape
Power dissipation: 2.08W
Capacitance: 17pF
Produkt ist nicht verfügbar
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FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 58W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
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FGB20N60SFD-F085 FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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NCP81080DR2G ncp81080-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Impulse rise time: 19ns
Topology: MOSFET half-bridge
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
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SS12 SSxx.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.5V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
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BSS123 BSS123-FAI.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.5nC
Features of semiconductor devices: logic level
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1N5408G 1N540x.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: bulk
Max. forward voltage: 1V
Leakage current: 50µA
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1N5407G 1N540x.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 200A; DO27; bulk; Ufmax: 1V
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Load current: 3A
Kind of package: bulk
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
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SBC857BDW1T1G BC85xBDW1T1.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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1N4148WT 1N4x48WT_1N914BWT.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Case: SOD523F
Capacitance: 4pF
Max. load current: 0.2A
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BAT54XV2T1G BAT54XV2T1-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
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FXMAR2102UMX FXMAR2102L8X.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MLP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
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BC639 BC635-D.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power: 0.8W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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SS8550 SS8550.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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TIP41C-TU TIP41A.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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2N5401G 7553200.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC550CG BC550C-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power: 0.5W
Case: TO92
Mounting: THT
Frequency: 300MHz
Produkt ist nicht verfügbar
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MC74ACT74DR2G mc74ac74-d.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Trigger: positive-edge-triggered
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LM358ADR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
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MOC3021M MOC3020M-ONS.PDF
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 400V
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC302XM
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KSD882YSTU KSD882.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Current gain: 160...320
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1N914TR 1N914-D.PDF 1n914.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; reel,tape; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Reverse recovery time: 4ns
Leakage current: 50µA
Capacitance: 4pF
Max. forward impulse current: 4A
Max. forward voltage: 1V
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1N4744A 1N47xxA.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
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74ACT139SC 74ACT139-D.PDF 74act139-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
Family: ACT
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74ACT32SC 74ACT32.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 40µA
Number of inputs: 2
Kind of package: tube
Family: ACT
Kind of gate: OR
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H11L1SVM H11L3M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Manufacturer series: H11L1
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Output voltage: 0...16V
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H11L1VM H11L3M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate; logic
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Manufacturer series: H11L1
Insulation voltage: 4.17kV
Max. off-state voltage: 6V
Output voltage: 0...16V
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MOC3052VM moc3052m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3052M; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3052M
Slew rate: 1kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
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MOC3063SM moc3163m-d.pdf dd93230-moc306x-050318.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3063M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 1.5kV/μs
Max. off-state voltage: 6V
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MOC3063SVM moc3163m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3063M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3063M
Slew rate: 1.5kV/μs
Max. off-state voltage: 6V
Produkt ist nicht verfügbar
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MOC3061SR2M moc3163m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; PDIP6; Ch: 1; MOC3061M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC3061M
Slew rate: 1.5kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
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MOC3083TVM moc3083m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; PDIP6; Ch: 1; MOC3083M; 1.5kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3083M
Slew rate: 1.5kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
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MOC8050SR2VM MOC8021M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: SMD
Manufacturer series: MOC8050M
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Turn-on time: 8.5µs
Case: PDIP6
Turn-off time: 95µs
Number of channels: 1
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MOC3041SM MOC3043M-D.PDF MOC3040_41_42_43.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
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MOC3041SR2M MOC3043M-D.PDF
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC304XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC304XM
Slew rate: 2kV/μs
Number of channels: 1
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FXMA2102UMX FXMA2102L8X.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Number of inputs: 2
Kind of package: reel; tape
Case: UQFN8
Number of outputs: 2
Frequency: 37MHz
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4N35TVM 4N37M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 2µs
Turn-off time: 2µs
Manufacturer series: 4N3X
Max. off-state voltage: 6V
Produkt ist nicht verfügbar
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FGD5T120SH fgd5t120sh-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 5A
Power dissipation: 28W
Case: DPAK
Gate-emitter voltage: ±25V
Pulsed collector current: 12.5A
Mounting: SMD
Gate charge: 6.7nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Version: ESD
Application: ignition systems
Produkt ist nicht verfügbar
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MOC3022SR2M moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
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MOC3022TVM moc3023m-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; PDIP6; Ch: 1; MOC302XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac; without zero voltage crossing driver
Case: PDIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Slew rate: 1kV/μs
Produkt ist nicht verfügbar
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1N4001G 1N4001-D.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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KSC945YTA KSC945.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
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KSB772YS KSB772.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Power dissipation: 1W
Polarisation: bipolar
Pulsed collector current: 7A
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO126ISO
Frequency: 80MHz
Collector current: 3A
Mounting: THT
Collector-emitter voltage: 30V
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KSC1815YTA KSC1815.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Power dissipation: 0.4W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...240
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 80MHz
Collector current: 0.15A
Mounting: THT
Collector-emitter voltage: 50V
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SBC857BWT1G BC85xBWT1.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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KSD1691GS KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
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KSD1691GSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 200...400
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1691YS KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1691YSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 20W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616A.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.75W
Case: TO92
Current gain: 200...400
Mounting: THT
Kind of package: bulk
Frequency: 160MHz
Pulsed collector current: 2A
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2N7002 2N7000_2N7002_NDS7002A.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NLSV1T34DFT2G NLSV1T34DFT2G.PDF
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: SOT353
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Quiescent current: 2µA
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1N4004G 1N4001-D.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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6N136VM HCPL2530M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-off time: 260ns
Manufacturer series: 6N136M
Number of pins: 8
Max. off-state voltage: 5V
Turn-on time: 250ns
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6N137SM 4N35SM.pdf 6N137SM.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Insulation voltage: 5kV
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6N136SM HCPL2530M-D.PDF DD93217-6N135_136-ICPL4502_4503-240717.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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FXMA2104UMX FXMA2104UMX.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MLP12
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
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1N4005G 1N4001-D.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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UF4007 UF4001.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; reel,tape; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO41
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel; tape
Power dissipation: 2.08W
Capacitance: 17pF
Produkt ist nicht verfügbar
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FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 58W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Version: ESD
Features of semiconductor devices: logic level
Pulsed collector current: 60A
Application: ignition systems
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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