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NTHL040N65S3F ONSEMI NTHL040N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
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BZX84C4V7LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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NST3904DXV6T1G ONSEMI nst3904dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NST3904F3T5G ONSEMI nst3904f3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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NUP2105LT1G NUP2105LT1G ONSEMI NUP2105L.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 6048 Stücke:
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179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
Mindestbestellmenge: 179
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MC14011UBDG MC14011UBDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
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167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
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MC14011BDR2G MC14011BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14011UBDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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1N4148WS 1N4148WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 5405 Stücke:
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715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1825+0.039 EUR
2058+0.035 EUR
3000+0.034 EUR
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2318 Stücke:
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63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
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1N5339BRLG 1N5339BRLG ONSEMI 1n5333b-d.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1865 Stücke:
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148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
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LM393N LM393N ONSEMI LM393N-fai.pdf Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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MC79M15CDTRKG MC79M15CDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
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132+0.54 EUR
192+0.37 EUR
211+0.34 EUR
243+0.29 EUR
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MC79M15CTG MC79M15CTG ONSEMI MC79M00-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
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119+0.6 EUR
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MC79M15BDTRKG MC79M15BDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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MC79M15BTG ONSEMI mc79m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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NTR4501NT1G NTR4501NT1G ONSEMI NxR4501N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6921 Stücke:
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313+0.23 EUR
447+0.16 EUR
599+0.12 EUR
677+0.11 EUR
889+0.081 EUR
1000+0.073 EUR
1500+0.068 EUR
3000+0.067 EUR
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FDC3601N FDC3601N ONSEMI fdc3601n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 976mΩ
Gate-source voltage: ±20V
auf Bestellung 2990 Stücke:
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88+0.82 EUR
118+0.61 EUR
177+0.4 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 88
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SZNUP2105LT1G SZNUP2105LT1G ONSEMI NUP2105L.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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RS1G RS1G ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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RS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVHPRS1GFA NRVHPRS1GFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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MBR0540 ONSEMI MBR0540.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Produkt ist nicht verfügbar
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FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
Produkt ist nicht verfügbar
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FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
Produkt ist nicht verfügbar
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AFGHL50T65RQDN ONSEMI afghl50t65rqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
Produkt ist nicht verfügbar
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AFGHL50T65SQ ONSEMI afghl50t65sq-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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AFGHL50T65SQD ONSEMI afghl50t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
Produkt ist nicht verfügbar
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AFGHL50T65SQDC ONSEMI afghl50t65sqdc-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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MC14050BDR2G MC14050BDR2G ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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MC14050BDTR2G ONSEMI MC14049B-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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1N5355BRLG 1N5355BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NVH4L030N120M3S ONSEMI nvh4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NTH4L030N120M3S ONSEMI nth4l030n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NVBG030N120M3S ONSEMI NVBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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MPSA06G MPSA06G ONSEMI pzta06-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Mounting: THT
Collector-emitter voltage: 80V
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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NSDP301MX2WT5G ONSEMI nsdp301mx2w-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Produkt ist nicht verfügbar
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NSVDP301MX2WT5G ONSEMI nsdp301mx2w-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Application: automotive industry
Produkt ist nicht verfügbar
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1N5338BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5337BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MBR140SFT1G MBR140SFT1G ONSEMI MBR140SF.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
auf Bestellung 120 Stücke:
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120+0.6 EUR
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MPSA92G MPSA92G ONSEMI mpsa92-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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BAS16 BAS16 ONSEMI bas16-f.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MB10S ONSEMI mb10s-d.pdf MB05S-MB10S%20N0529%20REV.C.pdf mb2s.pdf MB10S.pdf 5272_MB10S.pdf FAIR-S-A0002364144-1.pdf?t.download=true&u=5oefqw Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C5V6LT3G BZX84C5V6LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
auf Bestellung 9900 Stücke:
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625+0.11 EUR
1191+0.06 EUR
2359+0.03 EUR
3106+0.023 EUR
3356+0.021 EUR
5000+0.02 EUR
Mindestbestellmenge: 625
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NVBLS0D5N04CTXG ONSEMI nvbls0d5n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 4700A; 97.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 185nC
On-state resistance: 570µΩ
Power dissipation: 97.4W
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 4700A
Kind of channel: enhancement
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BZX79C7V5-T50A BZX79C7V5-T50A ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
auf Bestellung 4942 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
758+0.094 EUR
977+0.073 EUR
1417+0.05 EUR
1902+0.038 EUR
1909+0.037 EUR
Mindestbestellmenge: 556
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CNY172M CNY172M ONSEMI CNY172M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 309 Stücke:
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81+0.89 EUR
133+0.54 EUR
163+0.44 EUR
258+0.28 EUR
Mindestbestellmenge: 81
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CNY174M CNY174M ONSEMI CNY173M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.46 EUR
Mindestbestellmenge: 49
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CNY171M CNY171M ONSEMI CNY171M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 106 Stücke:
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81+0.89 EUR
106+0.67 EUR
Mindestbestellmenge: 81
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CNY17F1VM CNY17F1VM ONSEMI CNY17F1VM.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
204+0.35 EUR
246+0.29 EUR
280+0.26 EUR
500+0.24 EUR
Mindestbestellmenge: 81
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CNY172VM CNY172VM ONSEMI CNY172VM.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 538 Stücke:
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91+0.79 EUR
124+0.58 EUR
168+0.43 EUR
Mindestbestellmenge: 91
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CNY17F4TVM CNY17F4TVM ONSEMI CNY17F4TVM.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
173+0.41 EUR
210+0.34 EUR
239+0.3 EUR
Mindestbestellmenge: 81
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NTHL040N65S3F NTHL040N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
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BZX84C4V7LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
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NST3904DXV6T1G nst3904dxv6t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NST3904F3T5G nst3904f3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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NUP2105LT1G NUP2105L.PDF
NUP2105LT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 6048 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
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MC14011UBDG MC14001B-D.pdf
MC14011UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14001B-D.pdf
MC14011BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14001B-D.pdf
MC14011UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS.pdf
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 5405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1825+0.039 EUR
2058+0.035 EUR
3000+0.034 EUR
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2318 Stücke:
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Anzahl Preis
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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1N5339BRLG 1n5333b-d.pdf
1N5339BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1865 Stücke:
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Anzahl Preis
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM393N LM393N-fai.pdf
LM393N
Hersteller: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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MC79M15CDTRKG MC79M00-D.PDF
MC79M15CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
192+0.37 EUR
211+0.34 EUR
243+0.29 EUR
Mindestbestellmenge: 132
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MC79M15CTG MC79M00-D.PDF
MC79M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+0.6 EUR
Mindestbestellmenge: 119
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MC79M15BDTRKG MC79M00-D.PDF
MC79M15BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MC79M15BTG mc79m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
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NTR4501NT1G NxR4501N.PDF
NTR4501NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6921 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
447+0.16 EUR
599+0.12 EUR
677+0.11 EUR
889+0.081 EUR
1000+0.073 EUR
1500+0.068 EUR
3000+0.067 EUR
Mindestbestellmenge: 313
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FDC3601N fdc3601n-d.pdf
FDC3601N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 976mΩ
Gate-source voltage: ±20V
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
118+0.61 EUR
177+0.4 EUR
250+0.34 EUR
500+0.32 EUR
Mindestbestellmenge: 88
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SZNUP2105LT1G NUP2105L.PDF
SZNUP2105LT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Produkt ist nicht verfügbar
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RS1G RS1x.pdf
RS1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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RS1GFA rs1afa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVHPRS1GFA rs1afa-d.pdf
NRVHPRS1GFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR0540 MBR0540.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FGH50T65UPD fgh50t65upd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Produkt ist nicht verfügbar
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FGHL50T65MQD FGHL50T65MQD-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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FGHL50T65LQDT fghl50t65lqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 509nC
Produkt ist nicht verfügbar
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FGHL50T65MQDT fghl50t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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FGHL50T65SQDT fghl50t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99.7nC
Produkt ist nicht verfügbar
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AFGHL50T65RQDN afghl50t65rqdn-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 173W; TO247-3; automotive industry
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Application: automotive industry
Power dissipation: 173W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 65nC
Produkt ist nicht verfügbar
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AFGHL50T65SQ afghl50t65sq-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Produkt ist nicht verfügbar
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AFGHL50T65SQD afghl50t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 102nC
Produkt ist nicht verfügbar
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AFGHL50T65SQDC afghl50t65sqdc-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 119W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 119W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 94nC
Produkt ist nicht verfügbar
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MC14050BDR2G mc14049b-d.pdf
MC14050BDR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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MC14050BDTR2G MC14049B-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
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1N5355BRLG description 1N53xx.PDF
1N5355BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 18V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 18V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NVH4L030N120M3S nvh4l030n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NTH4L030N120M3S nth4l030n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Case: TO247-4
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 52A
Pulsed drain current: 193A
Power dissipation: 156W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -10...22V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NVBG030N120M3S NVBG030N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Case: D2PAK-7
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -3...18V
Gate charge: 107nC
On-state resistance: 58mΩ
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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MPSA06G pzta06-d.pdf
MPSA06G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Mounting: THT
Collector-emitter voltage: 80V
Case: TO92
Collector current: 0.5A
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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NSDP301MX2WT5G nsdp301mx2w-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Produkt ist nicht verfügbar
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NSVDP301MX2WT5G nsdp301mx2w-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; X2DFNW2; reel,tape
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Case: X2DFNW2
Semiconductor structure: single diode
Max. off-state voltage: 80V
Features of semiconductor devices: PIN; RF
Load current: 0.1A
Application: automotive industry
Produkt ist nicht verfügbar
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1N5338BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5337BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MBR140SFT1G MBR140SF.PDF
MBR140SFT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Kind of package: reel; tape
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
MPSA92G description mpsa92-d.pdf
MPSA92G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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BAS16 bas16-f.pdf
BAS16
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MB10S mb10s-d.pdf MB05S-MB10S%20N0529%20REV.C.pdf mb2s.pdf MB10S.pdf 5272_MB10S.pdf FAIR-S-A0002364144-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C5V6LT3G bzx84c2v4lt1-d.pdf
BZX84C5V6LT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1191+0.06 EUR
2359+0.03 EUR
3106+0.023 EUR
3356+0.021 EUR
5000+0.02 EUR
Mindestbestellmenge: 625
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NVBLS0D5N04CTXG nvbls0d5n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 4700A; 97.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 185nC
On-state resistance: 570µΩ
Power dissipation: 97.4W
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 4700A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX79C7V5-T50A BZX79C.PDF
BZX79C7V5-T50A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; Ammo Pack; CASE017AG; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX79C
auf Bestellung 4942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
977+0.073 EUR
1417+0.05 EUR
1902+0.038 EUR
1909+0.037 EUR
Mindestbestellmenge: 556
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CNY172M CNY172M.pdf
CNY172M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
133+0.54 EUR
163+0.44 EUR
258+0.28 EUR
Mindestbestellmenge: 81
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CNY174M CNY173M.pdf
CNY174M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.46 EUR
Mindestbestellmenge: 49
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CNY171M CNY171M.pdf
CNY171M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
106+0.67 EUR
Mindestbestellmenge: 81
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CNY17F1VM CNY17F1VM.pdf
CNY17F1VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
204+0.35 EUR
246+0.29 EUR
280+0.26 EUR
500+0.24 EUR
Mindestbestellmenge: 81
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CNY172VM CNY172VM.pdf
CNY172VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 538 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
124+0.58 EUR
168+0.43 EUR
Mindestbestellmenge: 91
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CNY17F4TVM CNY17F4TVM.pdf
CNY17F4TVM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
173+0.41 EUR
210+0.34 EUR
239+0.3 EUR
Mindestbestellmenge: 81
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