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MBT3906DW1T1G MBT3906DW1T1G ONSEMI mbt3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 4574 Stücke:
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625+0.11 EUR
807+0.089 EUR
1327+0.054 EUR
1819+0.039 EUR
2033+0.035 EUR
3000+0.03 EUR
Mindestbestellmenge: 625
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MCT6 MCT6 ONSEMI MCT6-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Produkt ist nicht verfügbar
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MCT61 MCT61 ONSEMI MCT61.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Produkt ist nicht verfügbar
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MCT6S ONSEMI MCT62-D.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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MCT6SD ONSEMI MCT62-D.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
Produkt ist nicht verfügbar
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MC74HC112ADTG MC74HC112ADTG ONSEMI MC74HC112-D.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
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BAT54A ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
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MMBT5088LT1G MMBT5088LT1G ONSEMI MMBT5088L_MMBT5089L.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Type of transistor: NPN
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
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385+0.19 EUR
715+0.1 EUR
1095+0.065 EUR
1441+0.05 EUR
1619+0.044 EUR
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NTMFS5C628NLT1G NTMFS5C628NLT1G ONSEMI ntmfs5c628nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1120 Stücke:
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73+0.99 EUR
81+0.89 EUR
100+0.82 EUR
250+0.79 EUR
500+0.7 EUR
1000+0.67 EUR
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1N4148-T50R 1N4148-T50R ONSEMI 1n914-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 5259 Stücke:
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1471+0.049 EUR
2500+0.029 EUR
3473+0.021 EUR
4133+0.017 EUR
4546+0.016 EUR
4951+0.014 EUR
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2V7002KT1G 2V7002KT1G ONSEMI 2n7002k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6947 Stücke:
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715+0.1 EUR
893+0.08 EUR
1060+0.067 EUR
2174+0.033 EUR
2404+0.03 EUR
3000+0.026 EUR
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FQT13N06LTF FQT13N06LTF ONSEMI fqt13n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDC655BN FDC655BN ONSEMI FDC655BN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 260 Stücke:
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112+0.64 EUR
146+0.49 EUR
200+0.36 EUR
231+0.31 EUR
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NTD6414ANT4G ONSEMI ntd6414an-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS14 SS14 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 4288 Stücke:
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250+0.29 EUR
313+0.23 EUR
341+0.21 EUR
417+0.17 EUR
459+0.16 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 250
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NCP1053ST136T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Produkt ist nicht verfügbar
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NCP1053ST44T3G ONSEMI ncp1050-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Produkt ist nicht verfügbar
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GBU6M GBU6M ONSEMI GBU6x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 726 Stücke:
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65+1.1 EUR
72+1 EUR
100+0.97 EUR
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NVR4501NT1G NVR4501NT1G ONSEMI NxR4501N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2341 Stücke:
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90+0.8 EUR
146+0.49 EUR
224+0.32 EUR
261+0.27 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 90
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H11L1M H11L1M ONSEMI H11L1.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
Produkt ist nicht verfügbar
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BAV70 ONSEMI BAV70.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVR0340HT1G ONSEMI nsr0340h-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; 5ns; reel,tape
Mounting: SMD
Capacitance: 6pF
Reverse recovery time: 5ns
Load current: 0.25A
Max. forward voltage: 0.59V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Produkt ist nicht verfügbar
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MMBT3906 MMBT3906 ONSEMI MMBT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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FCH125N60E ONSEMI ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FCP125N60E ONSEMI fcp125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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NTP125N60S5H ONSEMI ntp125n60s5h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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ADP3120AJRZ-RL ADP3120AJRZ-RL ONSEMI adp3120a-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
auf Bestellung 199 Stücke:
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60+1.2 EUR
110+0.65 EUR
124+0.58 EUR
135+0.53 EUR
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SBAS16XV2T5G SBAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 10664 Stücke:
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320+0.23 EUR
425+0.17 EUR
510+0.14 EUR
560+0.13 EUR
8000+0.11 EUR
Mindestbestellmenge: 320
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DTA124EET1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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MMBTA92 MMBTA92 ONSEMI MMBTA92-DTE.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SBAS16XV2T1G SBAS16XV2T1G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3798 Stücke:
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1000+0.072 EUR
1283+0.056 EUR
2009+0.036 EUR
2565+0.028 EUR
2841+0.025 EUR
3247+0.022 EUR
Mindestbestellmenge: 1000
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BAT54 ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
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LL4148 LL4148 ONSEMI LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 1878 Stücke:
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715+0.1 EUR
1087+0.066 EUR
1220+0.059 EUR
1563+0.046 EUR
1774+0.04 EUR
1878+0.039 EUR
Mindestbestellmenge: 715
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FAN7842MX FAN7842MX ONSEMI fan7842-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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NTHL125N65S3H ONSEMI nthl125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC547B BC547B ONSEMI BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
auf Bestellung 9760 Stücke:
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410+0.17 EUR
459+0.16 EUR
550+0.13 EUR
610+0.12 EUR
758+0.094 EUR
1000+0.092 EUR
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FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C15 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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MC74HC377ADTR2G ONSEMI MC74HC377A-D.pdf Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Produkt ist nicht verfügbar
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BZX84C75LT1G BZX84C75LT1G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 41998 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
1042+0.069 EUR
2075+0.034 EUR
2748+0.026 EUR
2977+0.024 EUR
3106+0.023 EUR
12000+0.021 EUR
Mindestbestellmenge: 556
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MMSD103T1G MMSD103T1G ONSEMI MMSD103T1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
890+0.08 EUR
Mindestbestellmenge: 890
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1N5364BRLG 1N5364BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 2150 Stücke:
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157+0.46 EUR
184+0.39 EUR
203+0.35 EUR
285+0.25 EUR
500+0.23 EUR
Mindestbestellmenge: 157
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1N5364BG 1N5364BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 615 Stücke:
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179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
286+0.25 EUR
319+0.22 EUR
343+0.21 EUR
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ESD9B3.3ST5G ESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
auf Bestellung 10782 Stücke:
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455+0.16 EUR
794+0.09 EUR
1323+0.054 EUR
1603+0.045 EUR
1954+0.037 EUR
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SZESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCP1234BD100R2G ONSEMI ncp1234-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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NCP1234BD65R2G ONSEMI ncp1234-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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NCP1236BD100R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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NCP1236BD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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SS34 SS34 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
auf Bestellung 2024 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
141+0.51 EUR
179+0.4 EUR
202+0.35 EUR
250+0.32 EUR
Mindestbestellmenge: 107
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NVTYS003N04CLTWG ONSEMI nvtys003n04cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTYS003N04CTWG ONSEMI nvtys003n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS003N04CTAG ONSEMI nvtfs003n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS24 SS24 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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SS24 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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1SMA5922BT3G 1SMA5922BT3G ONSEMI 1SMA59xxBT3.PDF Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
236+0.3 EUR
321+0.22 EUR
374+0.19 EUR
532+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 200
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SMBJ30A SMBJ30A ONSEMI SMBJ5V0A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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MBT3906DW1T1G mbt3906.pdf
MBT3906DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 4574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
807+0.089 EUR
1327+0.054 EUR
1819+0.039 EUR
2033+0.035 EUR
3000+0.03 EUR
Mindestbestellmenge: 625
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MCT6 MCT6-ONS.pdf
MCT6
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Produkt ist nicht verfügbar
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MCT61 MCT61.pdf
MCT61
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 85V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 50%@5mA
Collector-emitter voltage: 85V
Insulation voltage: 5.3kV
Produkt ist nicht verfügbar
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MCT6S MCT62-D.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
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MCT6SD MCT62-D.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 85V; DIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: DIP8
CTR@If: 20%@10mA
Collector-emitter voltage: 85V
Insulation voltage: 5kV
Manufacturer series: MCT6
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 3V
Produkt ist nicht verfügbar
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MC74HC112ADTG MC74HC112-D.pdf
MC74HC112ADTG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP16; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BAT54A bat54x-f.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
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MMBT5088LT1G MMBT5088L_MMBT5089L.PDF
MMBT5088LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Type of transistor: NPN
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 50MHz
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
715+0.1 EUR
1095+0.065 EUR
1441+0.05 EUR
1619+0.044 EUR
Mindestbestellmenge: 385
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NTMFS5C628NLT1G ntmfs5c628nl-d.pdf
NTMFS5C628NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
81+0.89 EUR
100+0.82 EUR
250+0.79 EUR
500+0.7 EUR
1000+0.67 EUR
Mindestbestellmenge: 73
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1N4148-T50R 1n914-d.pdf
1N4148-T50R
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 5259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1471+0.049 EUR
2500+0.029 EUR
3473+0.021 EUR
4133+0.017 EUR
4546+0.016 EUR
4951+0.014 EUR
Mindestbestellmenge: 1471
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2V7002KT1G 2n7002k-d.pdf
2V7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6947 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
893+0.08 EUR
1060+0.067 EUR
2174+0.033 EUR
2404+0.03 EUR
3000+0.026 EUR
Mindestbestellmenge: 715
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FQT13N06LTF fqt13n06l-d.pdf
FQT13N06LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDC655BN FDC655BN.pdf
FDC655BN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
146+0.49 EUR
200+0.36 EUR
231+0.31 EUR
Mindestbestellmenge: 112
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NTD6414ANT4G ntd6414an-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS14 SSxx.pdf
SS14
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 4288 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
313+0.23 EUR
341+0.21 EUR
417+0.17 EUR
459+0.16 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 250
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NCP1053ST136T3G ncp1050-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Produkt ist nicht verfügbar
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NCP1053ST44T3G ncp1050-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V DC
Produkt ist nicht verfügbar
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GBU6M GBU6x.PDF
GBU6M
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 726 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
72+1 EUR
100+0.97 EUR
Mindestbestellmenge: 65
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NVR4501NT1G NxR4501N.PDF
NVR4501NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
146+0.49 EUR
224+0.32 EUR
261+0.27 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 90
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H11L1M H11L1.pdf
H11L1M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 1Mbps; DIP6; 5.3kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Transfer rate: 1Mbps
Turn-on time: 650ns
Turn-off time: 1.2µs
Slew rate: 5.3kV/μs
Produkt ist nicht verfügbar
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BAV70 BAV70.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVR0340HT1G nsr0340h-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; 5ns; reel,tape
Mounting: SMD
Capacitance: 6pF
Reverse recovery time: 5ns
Load current: 0.25A
Max. forward voltage: 0.59V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
Produkt ist nicht verfügbar
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MMBT3906 MMBT3906.pdf
MMBT3906
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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FCH125N60E ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FCP125N60E fcp125n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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NTP125N60S5H ntp125n60s5h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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ADP3120AJRZ-RL adp3120a-d.pdf
ADP3120AJRZ-RL
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
110+0.65 EUR
124+0.58 EUR
135+0.53 EUR
Mindestbestellmenge: 60
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SBAS16XV2T5G bas16xv2t1-d.pdf
SBAS16XV2T5G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 10664 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.23 EUR
425+0.17 EUR
510+0.14 EUR
560+0.13 EUR
8000+0.11 EUR
Mindestbestellmenge: 320
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DTA124EET1G dta124e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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MMBTA92 MMBTA92-DTE.PDF
MMBTA92
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SBAS16XV2T1G bas16xv2t1-d.pdf
SBAS16XV2T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 3798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1283+0.056 EUR
2009+0.036 EUR
2565+0.028 EUR
2841+0.025 EUR
3247+0.022 EUR
Mindestbestellmenge: 1000
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BAT54 bat54x-f.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
Produkt ist nicht verfügbar
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LL4148 LL4148.pdf
LL4148
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 1878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1087+0.066 EUR
1220+0.059 EUR
1563+0.046 EUR
1774+0.04 EUR
1878+0.039 EUR
Mindestbestellmenge: 715
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FAN7842MX fan7842-d.pdf
FAN7842MX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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NTHL125N65S3H nthl125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC547B BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw
BC547B
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
auf Bestellung 9760 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
410+0.17 EUR
459+0.16 EUR
550+0.13 EUR
610+0.12 EUR
758+0.094 EUR
1000+0.092 EUR
Mindestbestellmenge: 334
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FCP125N65S3R0 fcp125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP125N65S3 fcp125n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX84C15 BZX84Cxx.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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MC74HC377ADTR2G MC74HC377A-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
Produkt ist nicht verfügbar
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BZX84C75LT1G bzx84c2v4lt1-d.pdf
BZX84C75LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 41998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1042+0.069 EUR
2075+0.034 EUR
2748+0.026 EUR
2977+0.024 EUR
3106+0.023 EUR
12000+0.021 EUR
Mindestbestellmenge: 556
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MMSD103T1G MMSD103T1G.PDF
MMSD103T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Mounting: SMD
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Load current: 0.2A
Power dissipation: 0.4W
Max. forward voltage: 1.25V
Max. off-state voltage: 250V
Case: SOD123
Semiconductor structure: single diode
Type of diode: switching
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
890+0.08 EUR
Mindestbestellmenge: 890
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1N5364BRLG description 1N53xx.PDF
1N5364BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 2150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
184+0.39 EUR
203+0.35 EUR
285+0.25 EUR
500+0.23 EUR
Mindestbestellmenge: 157
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1N5364BG 1N53xx.PDF
1N5364BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
205+0.35 EUR
224+0.32 EUR
286+0.25 EUR
319+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 179
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ESD9B3.3ST5G esd9b-d.pdf
ESD9B3.3ST5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
auf Bestellung 10782 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
794+0.09 EUR
1323+0.054 EUR
1603+0.045 EUR
1954+0.037 EUR
Mindestbestellmenge: 455
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SZESD9B3.3ST5G esd9b-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCP1234BD100R2G ncp1234-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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NCP1234BD65R2G ncp1234-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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NCP1236BD100R2G ncp1236-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1236BD65R2G ncp1236-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
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SS34 SS32_SS39.pdf
SS34
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape; 2.27W
Mounting: SMD
Power dissipation: 2.27W
Load current: 3A
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
auf Bestellung 2024 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
141+0.51 EUR
179+0.4 EUR
202+0.35 EUR
250+0.32 EUR
Mindestbestellmenge: 107
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NVTYS003N04CLTWG nvtys003n04cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 498A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 498A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTYS003N04CTWG nvtys003n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 99A; Idm: 465A; 34W; LFPAK33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 99A
Pulsed drain current: 465A
Power dissipation: 34W
Case: LFPAK33
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS003N04CTAG nvtfs003n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS24 S210.pdf
SS24
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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SS24 S210.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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1SMA5922BT3G 1SMA59xxBT3.PDF
1SMA5922BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
236+0.3 EUR
321+0.22 EUR
374+0.19 EUR
532+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 200
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SMBJ30A SMBJ5V0A.pdf
SMBJ30A
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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