Foto | Bezeichnung | Hersteller | Beschreibung |
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D45H11G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MJD45H11RLG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NJVMJD45H11G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NJVMJD45H11RLG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NJVMJD45H11T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDB33N25TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Power dissipation: 235W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 582 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2907ABU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PN2907ATA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PN2907ATAR | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PN2907ATF | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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PN2907ATFR | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Polarisation: bipolar Type of transistor: PNP Case: TO92 Formed Mounting: THT Power dissipation: 0.625W Collector current: 0.8A Current gain: 100...300 Collector-emitter voltage: 60V Kind of package: reel; tape Frequency: 200MHz |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVBC858BLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
GRUBC858BWT1G | ONSEMI |
Category: Unclassified Description: GRUBC858BWT1G |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3020TVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 30mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC3020VM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 30mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDN360P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 9nC Technology: PowerTrench® |
auf Bestellung 3210 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5103 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -40V Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRF30L60CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.73V Max. load current: 30A Max. forward impulse current: 0.24kA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74HC1G08DBVT1G-Q | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; HC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC74A Operating temperature: -55...125°C Family: HC Quiescent current: 1µA Number of outputs: 1 |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC1G08DFT1G-Q | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD4216SD | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Kind of output: triac Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Turn-off time: 52µs Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FOD4216SDV | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Kind of output: triac Type of optocoupler: optotriac Kind of package: reel; tape Mounting: SMD Conform to the norm: VDE Turn-off time: 52µs Turn-on time: 60µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FOD4216SV | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: SMT6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: SMD Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FOD4216TV | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: THT Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FOD4216V | ONSEMI |
![]() Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube Turn-on time: 60µs Trigger current: 1.3mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 600V Insulation voltage: 5kV Case: DIP6 Manufacturer series: FOD4216 Type of optocoupler: optotriac Kind of package: tube Mounting: THT Kind of output: triac Conform to the norm: VDE Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FGB3040G2-F085C | ONSEMI |
![]() Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA144WET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 80...140 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA144TET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA144TM3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
QRE1113 | ONSEMI |
![]() Description: Sensor: photoelectric Type of sensor: photoelectric |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV4274AST33T3G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Output current: 0.4A Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV4274ADT50RKG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BC858AWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
LMV393MUTAG | ONSEMI |
![]() Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA Type of integrated circuit: comparator Number of comparators: 2 Mounting: SMT Case: uDFN8 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Delay time: 1.5µs Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NST489AMT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6 Mounting: SMD Case: TSOP6 Type of transistor: NPN Kind of package: reel; tape Power dissipation: 0.535W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1126BP65G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC Case: DIP7 On-state resistance: 5.4Ω Mounting: SMD Number of channels: 1 Operating voltage: 8.5...35V DC Frequency: 61...71kHz Kind of integrated circuit: AC/DC switcher; PWM controller Type of integrated circuit: PMIC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP1246AD065R2G | ONSEMI |
![]() Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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GBU4M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MCH6001-TL-E | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6 Quantity in set/package: 3000pcs. Polarisation: bipolar Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Kind of transistor: RF Collector current: 0.15A Power dissipation: 0.6W Collector-emitter voltage: 8V Current gain: 60...150 Frequency: 13...16GHz Case: MCPH6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTS4001NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.33W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.2A On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 3209 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Case: SOD523F Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Capacitance: 3pF Kind of package: reel; tape Power dissipation: 0.2W Features of semiconductor devices: fast switching Reverse recovery time: 4ns Max. forward voltage: 1.2V |
auf Bestellung 4509 Stücke: Lieferzeit 14-21 Tag (e) |
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FNB43060T2 | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAB-C26 Output current: 30A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 59W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MUR1100EG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDB075N15A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 522A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDB075N15A-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC3021TVM | ONSEMI |
![]() ![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC3021SVM | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC3021VM | ONSEMI |
![]() ![]() Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC14070BDG | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Mounting: SMD Number of channels: quad; 4 Kind of package: tube Kind of gate: XOR Operating temperature: -55...125°C Delay time: 150ns Number of inputs: 2 Supply voltage: 3...18V DC Case: SO14 |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14070BDR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 150ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQD16N25CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.1A Power dissipation: 160W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FGY120T65SPD-F085 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 162nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 378A Power dissipation: 441W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
AFGY120T65SPD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 125nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Power dissipation: 357W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDMA1023PZ | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Gate charge: 12nC On-state resistance: 0.195Ω Power dissipation: 1.5W Gate-source voltage: ±8V Kind of channel: enhancement Case: MicroFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
1N5927BG | ONSEMI |
![]() Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
1N5919BRLG | ONSEMI |
![]() Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 5µA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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MAGNCV8402ASTT1G | ONSEMI |
Category: Unclassified Description: MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z12T1G | ONSEMI |
![]() ![]() Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9.6A Leakage current: 10nA Version: ESD Peak pulse power dissipation: 240W |
auf Bestellung 4025 Stücke: Lieferzeit 14-21 Tag (e) |
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SZESD5Z12T1G | ONSEMI |
![]() Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MARSZESD5Z12T1G | ONSEMI |
Category: Unclassified Description: MARSZESD5Z12T1G |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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D45H11G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD45H11RLG |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD45H11G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD45H11RLG |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD45H11T4G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDB33N25TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 582 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.95 EUR |
29+ | 2.52 EUR |
41+ | 1.76 EUR |
44+ | 1.66 EUR |
100+ | 1.59 EUR |
PN2907ABU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PN2907ATA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PN2907ATAR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PN2907ATF |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
PN2907ATFR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 200MHz
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
736+ | 0.097 EUR |
837+ | 0.086 EUR |
1114+ | 0.064 EUR |
1180+ | 0.061 EUR |
NSVBC858BLT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GRUBC858BWT1G |
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.021 EUR |
MOC3020TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MOC3020VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 30mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDN360P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 9nC
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 9nC
Technology: PowerTrench®
auf Bestellung 3210 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
124+ | 0.58 EUR |
140+ | 0.51 EUR |
197+ | 0.36 EUR |
231+ | 0.31 EUR |
428+ | 0.17 EUR |
451+ | 0.16 EUR |
MMBF5103 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
241+ | 0.3 EUR |
295+ | 0.24 EUR |
397+ | 0.18 EUR |
486+ | 0.15 EUR |
516+ | 0.14 EUR |
532+ | 0.13 EUR |
MBRF30L60CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC1G08DBVT1G-Q |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.045 EUR |
MC74HC1G08DFT1G-Q |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.04 EUR |
FOD4216SD |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Kind of output: triac
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Kind of output: triac
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD4216SDV |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Kind of output: triac
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Kind of output: triac
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD4216SV |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216TV |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216V |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
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FGB3040G2-F085C |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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DTA144WET1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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DTA144TET1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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DTA144TM3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
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QRE1113 |
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Hersteller: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric
Type of sensor: photoelectric
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric
Type of sensor: photoelectric
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1600+ | 0.43 EUR |
NCV4274AST33T3G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCV4274ADT50RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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BC858AWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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LMV393MUTAG |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
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NST489AMT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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NCP1126BP65G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Case: DIP7
On-state resistance: 5.4Ω
Mounting: SMD
Number of channels: 1
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Case: DIP7
On-state resistance: 5.4Ω
Mounting: SMD
Number of channels: 1
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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NCP1246AD065R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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GBU4M |
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Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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MCH6001-TL-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
Produkt ist nicht verfügbar
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NTS4001NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 3209 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
472+ | 0.15 EUR |
550+ | 0.13 EUR |
815+ | 0.088 EUR |
935+ | 0.077 EUR |
1067+ | 0.067 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |
1SS400T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
auf Bestellung 4509 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
658+ | 0.11 EUR |
872+ | 0.082 EUR |
993+ | 0.072 EUR |
2025+ | 0.035 EUR |
2137+ | 0.033 EUR |
FNB43060T2 |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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MUR1100EG | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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FDB075N15A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Produkt ist nicht verfügbar
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FDB075N15A-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3021TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
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MOC3021SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3021VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
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MC14070BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
106+ | 0.67 EUR |
MC14070BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
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FQD16N25CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
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AFGY120T65SPD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
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FDMA1023PZ |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
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1N5927BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
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1N5919BRLG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.36 EUR |
ESD5Z12T1G | ![]() |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
676+ | 0.11 EUR |
794+ | 0.09 EUR |
1296+ | 0.055 EUR |
1578+ | 0.045 EUR |
2213+ | 0.032 EUR |
2618+ | 0.027 EUR |
2763+ | 0.026 EUR |
SZESD5Z12T1G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MARSZESD5Z12T1G |
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.038 EUR |