| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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MUN5314DW1T1G | ONSEMI |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 1699 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5311DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5313DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5311DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
auf Bestellung 2705 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5314DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 80...140 Base resistor: 10kΩ Base-emitter resistor: 47kΩ Application: automotive industry Type of transistor: NPN / PNP |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5312DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 100 Base resistor: 22kΩ Base-emitter resistor: 22kΩ Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MUN5315DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 160...350 Base resistor: 10kΩ Quantity in set/package: 3000pcs. Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MUN5311DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 60 Base resistor: 10kΩ Base-emitter resistor: 10kΩ Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MUN5312DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 100 Base resistor: 22kΩ Base-emitter resistor: 22kΩ Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5316DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 160...350 Base resistor: 4.7kΩ Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5312DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5311DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5311DW1T3G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5313DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5313DW1T3G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SMUN5315DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 160...350 Base resistor: 10kΩ Quantity in set/package: 3000pcs. Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVMUN531335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 80...140 Base resistor: 2.2/47kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVMUN5312DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 60...100 Base resistor: 22kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 22kΩ Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVMUN5316DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.385W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Current gain: 160...350 Base resistor: 4.7kΩ Quantity in set/package: 3000pcs. Application: automotive industry Type of transistor: NPN / PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX85C10 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
auf Bestellung 1326 Stücke: Lieferzeit 14-21 Tag (e) |
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| BZX85C10-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTH4L040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 232A Power dissipation: 160W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575T-5G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 367 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575D2T-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Kind of package: reel; tape Electrical mounting: SMT |
auf Bestellung 3501 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSV9435T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Application: automotive industry Kind of transistor: BRT Kind of package: reel; tape Mounting: SMD Type of transistor: PNP Case: SOT223 Collector-emitter voltage: 300mV Power dissipation: 0.72W Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123JET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Quantity in set/package: 3000pcs. Current gain: 80...140 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDD5N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Pulsed drain current: 16A Power dissipation: 62W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FQU5N50CTU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDH45N50F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Pulsed drain current: 180A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PCRU3060W | ONSEMI |
Category: Transistors - Unclassified Description: PCRU3060W |
auf Bestellung 12492 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM2574N-12G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DIP8; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DIP8 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BD137G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Mounting: THT Frequency: 50MHz Power dissipation: 12W Kind of package: bulk |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX79C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
auf Bestellung 764 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 120A On-state resistance: 68mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: Kelvin terminal Pulsed drain current: 120A On-state resistance: 68mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG075N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 37A Power dissipation: 139W Case: D2PAK-7 Gate-source voltage: -8...22V Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH040F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH040F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH040P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBF5485 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Kind of package: reel; tape Mounting: SMD Type of transistor: N-JFET Case: SOT23 Polarisation: unipolar Gate-source voltage: -25V Drain current: 4mA Gate current: 10mA Power dissipation: 0.225W |
auf Bestellung 2456 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS35 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape Mounting: SMD Load current: 3A Max. forward voltage: 0.75V Max. forward impulse current: 100A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMC Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Mounting: SMD Load current: 30mA Max. forward voltage: 0.23V Max. off-state voltage: 5V Kind of package: reel; tape Case: SC59 Semiconductor structure: double series Type of diode: Schottky switching Capacitance: 0.9pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Max. off-state voltage: 5V Number of channels: 4 Application: automotive industry; USB Kind of package: reel; tape Peak pulse power dissipation: 0.5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZNSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Max. off-state voltage: 5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZESD5Z3.3T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MM74HC132M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: HC Kind of input: with Schmitt trigger Quiescent current: 20µA |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC132MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Kind of gate: NAND Number of channels: quad; 4 Kind of package: tube Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Family: HC Supply voltage: 2...6V DC Case: TSSOP14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC132MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Family: HC Supply voltage: 2...6V DC Case: TSSOP14 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Technology: CMOS Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Family: HC Supply voltage: 2...6V DC Case: SO14 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MJE340G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 30...240 |
auf Bestellung 1362 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE350G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Current gain: 30...240 Mounting: THT Kind of package: bulk |
auf Bestellung 838 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC02MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Case: TSSOP14 Kind of gate: NOR Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC02M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Case: SO14 Kind of gate: NOR Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MUN5314DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1699 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 953+ | 0.075 EUR |
| 1241+ | 0.058 EUR |
| 1370+ | 0.052 EUR |
| MUN5311DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 265+ | 0.27 EUR |
| MUN5313DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 220+ | 0.33 EUR |
| SMUN5311DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
auf Bestellung 2705 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 391+ | 0.18 EUR |
| 555+ | 0.13 EUR |
| 646+ | 0.11 EUR |
| 901+ | 0.079 EUR |
| 1027+ | 0.07 EUR |
| SMUN5314DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 248+ | 0.29 EUR |
| MUN5312DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5315DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5311DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5312DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 100
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5316DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5312DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5311DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5311DW1T3G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5313DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5313DW1T3G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5315DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 10kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN531335DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 2.2/47kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5312DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 60...100
Base resistor: 22kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5316DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 160...350
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Application: automotive industry
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C10 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
auf Bestellung 1326 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 582+ | 0.12 EUR |
| 705+ | 0.1 EUR |
| 1326+ | 0.054 EUR |
| BZX85C10-T50R |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 21.45 EUR |
| LM2575T-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 2.37 EUR |
| 40+ | 1.79 EUR |
| LM2575T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 1.93 EUR |
| 41+ | 1.76 EUR |
| LM2575D2T-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 38+ | 1.89 EUR |
| DF08S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
auf Bestellung 3501 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 107+ | 0.67 EUR |
| 140+ | 0.51 EUR |
| 158+ | 0.45 EUR |
| 200+ | 0.4 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| NSV9435T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123JET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Quantity in set/package: 3000pcs.
Current gain: 80...140
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD5N50NZTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FQU5N50CTU-WS |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH45N50F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.61 EUR |
| 12+ | 6.23 EUR |
| 13+ | 5.51 EUR |
| 30+ | 5.36 EUR |
| FQPF5N50CYDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PCRU3060W |
auf Bestellung 12492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 2.99 EUR |
| LM2574N-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 55+ | 1.32 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1.09 EUR |
| 250+ | 1.02 EUR |
| LM2574N-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 72+ | 1 EUR |
| 75+ | 0.96 EUR |
| 100+ | 0.92 EUR |
| 250+ | 0.89 EUR |
| LM2574N-12G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD137G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 123+ | 0.58 EUR |
| 171+ | 0.42 EUR |
| BZX79C5V6 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 764+ | 0.093 EUR |
| NTHL075N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L075N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG075N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 10.7 EUR |
| NXH040F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NXH040F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NXH040P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBF5485 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -25V
Drain current: 4mA
Gate current: 10mA
Power dissipation: 0.225W
auf Bestellung 2456 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 463+ | 0.15 EUR |
| 516+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| SS35 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMC
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SS351-TB-E |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Kind of package: reel; tape
Case: SC59
Semiconductor structure: double series
Type of diode: Schottky switching
Capacitance: 0.9pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Kind of package: reel; tape
Case: SC59
Semiconductor structure: double series
Type of diode: Schottky switching
Capacitance: 0.9pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSP4201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Application: automotive industry; USB
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Application: automotive industry; USB
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNSP4201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD5Z3.3T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: HC
Kind of input: with Schmitt trigger
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: HC
Kind of input: with Schmitt trigger
Quiescent current: 20µA
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| MM74HC132MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: TSSOP14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: TSSOP14
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Family: HC
Supply voltage: 2...6V DC
Case: SO14
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJE340G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
auf Bestellung 1362 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 115+ | 0.62 EUR |
| 178+ | 0.4 EUR |
| 200+ | 0.36 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| MJE350G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
auf Bestellung 838 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 84+ | 0.86 EUR |
| 95+ | 0.76 EUR |
| 126+ | 0.57 EUR |
| 200+ | 0.51 EUR |
| 500+ | 0.47 EUR |
| 74VHC02MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC02M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH