| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
4N32M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 50%@10mA Insulation voltage: 2.5kV Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 5µs |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
4N32SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Insulation voltage: 2.5kV Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
auf Bestellung 1760 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FQAF11N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 120W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 80nC |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MJL21194G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 4MHz |
auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FSB50450S | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Operating temperature: -20...100°C Collector-emitter voltage: 500V Output current: 1.5A Type of integrated circuit: driver Power dissipation: 10W Technology: Motion SPM® 5 Case: SPM5D-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Frequency: 15kHz Operating voltage: 13.5...16.5/0...400V DC Topology: MOSFET three-phase bridge Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FSB50550US | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Operating temperature: -40...150°C Collector-emitter voltage: 500V Output current: 2A Type of integrated circuit: driver Power dissipation: 14.5W Technology: Motion SPM® 5 Case: SPM5H-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC Topology: MOSFET three-phase bridge Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
RS1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Power dissipation: 1.19W Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: DO214AC; SMA |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
RS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Load current: 0.8A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RS1JFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Type of diode: rectifying Reverse recovery time: 300ns Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.6kV Load current: 0.8A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FGH40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 277W Gate charge: 0.37µC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 40A |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 259W Gate charge: 311nC Pulsed collector current: 240A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 60A |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 395W Gate charge: 399nC Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 277W Gate charge: 0.37µC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 40A |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FQPF3N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC14027BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Trigger: negative-edge-triggered Case: SO16 Kind of integrated circuit: JK flip-flop Number of channels: 2 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital |
auf Bestellung 2173 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Collector-emitter voltage: 160V Power dissipation: 0.9W Polarisation: bipolar Type of transistor: PNP Current gain: 160...320 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 50MHz Collector current: 1A |
auf Bestellung 3256 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
KSA1013YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Collector-emitter voltage: 160V Power dissipation: 0.9W Polarisation: bipolar Type of transistor: PNP Current gain: 160...320 Kind of package: bulk Case: TO92 Frequency: 50MHz Collector current: 1A |
auf Bestellung 5839 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
BZX85C12-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC7918CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Output current: 1A Voltage drop: 1.3V Number of channels: 1 Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1725 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Mounting: SMT Case: SO14 Integrated circuit features: low noise Voltage supply range: ± 5...18V DC; 10...36V DC Kind of package: reel; tape Number of channels: quad; 4 Bandwidth: 16MHz Input offset voltage: 3.5mV Slew rate: 7V/μs Operating temperature: -40...85°C |
auf Bestellung 690 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC33074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
auf Bestellung 731 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC33035DWR2G | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Supply voltage: 0...40V DC Output current: 0.1A Type of integrated circuit: driver Operating temperature: -40...85°C Application: universal Kind of package: reel; tape Case: SO24 Kind of integrated circuit: brushless motor controller Number of channels: 3 Operating voltage: 10...30V DC Topology: H-bridge Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
74AC04SC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC Quiescent current: 20µA |
auf Bestellung 271 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MM74HCT74M | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FCD380N60E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FCP380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FCP380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FCPF380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FCPF380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
BAV70LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Max. load current: 0.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC33151DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Kind of output: inverting Protection: undervoltage UVP Output voltage: 0.8...11.2V Kind of package: tube |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC33151PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Mounting: THT Operating temperature: -40...85°C Output current: -1.5...1.5A Type of integrated circuit: driver Kind of output: inverting Protection: undervoltage UVP Pulse fall time: 30ns Output voltage: 0.8...11.2V Kind of package: tube Case: DIP8 Kind of integrated circuit: MOSFET gate driver Number of channels: 2 Impulse rise time: 30ns Supply voltage: 6.5...18V DC |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MC34151DG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Kind of output: inverting Protection: undervoltage UVP Output voltage: 0.8...11.2V Kind of package: tube |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
1N5404RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape Max. off-state voltage: 0.4kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1V |
auf Bestellung 1127 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.8V Max. load current: 20A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MCT9001 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Case: DIP8 |
auf Bestellung 892 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MCT9001SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Case: PDIP8 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 5V Manufacturer series: MCT9001 |
auf Bestellung 669 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FQD5P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC74ACT161DG | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
74ACT240MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of integrated circuit: buffer; inverting; line driver Technology: CMOS Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC74ACT157DG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Operating temperature: -40...85°C Manufacturer series: ACT Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Technology: TTL Number of inputs: 4 Kind of package: tube Case: SOIC16 Family: ACT Kind of integrated circuit: multiplexer Number of channels: 4 |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
4N33M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Mounting: THT Turn-on time: 5µs Case: DIP6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 50%@10mA Kind of output: Darlington Insulation voltage: 2.5kV Type of optocoupler: optocoupler |
auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
4N33SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Manufacturer series: 4N3X Mounting: SMD Turn-on time: 5µs Case: PDIP6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 500%@10mA Kind of output: Darlington Insulation voltage: 4.17kV Max. off-state voltage: 3V Type of optocoupler: optocoupler |
auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
4N33SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-on time: 5µs Case: Gull wing 6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Kind of output: Darlington Insulation voltage: 7.5kV Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MC33172DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 2mV Slew rate: 2.1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low power Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Case: SO8 Number of channels: dual; 2 Bandwidth: 1.8MHz |
auf Bestellung 2123 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC33171DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 2mV Slew rate: 2.1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low power Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Case: SO8 Number of channels: single; 1 Bandwidth: 1.8MHz |
auf Bestellung 605 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC33152PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Number of channels: 2 Mounting: THT Operating temperature: -40...85°C Output voltage: 0.8...11.2V Kind of package: tube Impulse rise time: 30ns Supply voltage: 6.1...18V DC Kind of output: non-inverting Protection: undervoltage UVP Pulse fall time: 30ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC33164D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Maximum output current: 50mA Active logical level: low Type of integrated circuit: supervisor circuit DC supply current: 32µA Kind of package: tube Threshold on-voltage: 4.33V Case: SO8 Kind of integrated circuit: power on reset monitor (PoR) Number of channels: 1 Kind of RESET output: open collector Supply voltage: 1...10V DC |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC33164D-3G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Maximum output current: 30mA Active logical level: low Type of integrated circuit: supervisor circuit DC supply current: 32µA Kind of package: tube Threshold on-voltage: 2.71V Case: SO8 Kind of integrated circuit: power on reset monitor (PoR) Number of channels: 1 Kind of RESET output: open collector Supply voltage: 1...10V DC |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 4N32M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 105+ | 0.82 EUR |
| 150+ | 0.57 EUR |
| 165+ | 0.51 EUR |
| 177+ | 0.48 EUR |
| 191+ | 0.44 EUR |
| 250+ | 0.39 EUR |
| 500+ | 0.37 EUR |
| 4N32SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 109+ | 0.79 EUR |
| ES3J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
auf Bestellung 1760 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 205+ | 0.42 EUR |
| 227+ | 0.38 EUR |
| 268+ | 0.32 EUR |
| 277+ | 0.31 EUR |
| FQAF11N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 80nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 80nC
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 7.04 EUR |
| 18+ | 4.9 EUR |
| MJL21194G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.29 EUR |
| 18+ | 4.75 EUR |
| 25+ | 4.66 EUR |
| NTMFSC011N08M7 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50450S |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Power dissipation: 10W
Technology: Motion SPM® 5
Case: SPM5D-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Frequency: 15kHz
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Power dissipation: 10W
Technology: Motion SPM® 5
Case: SPM5D-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Frequency: 15kHz
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550US |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5248BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO214AC; SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO214AC; SMA
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.37 EUR |
| 323+ | 0.26 EUR |
| 410+ | 0.2 EUR |
| 451+ | 0.19 EUR |
| RS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1JFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 300ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 300ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NRVHPRS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 12.04 EUR |
| 10+ | 10.34 EUR |
| FGY60T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 60A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 42.54 EUR |
| FGY75T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.22 EUR |
| FGH40T120SMD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 16.55 EUR |
| FQPF3N80C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.46 EUR |
| MC14027BDR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
auf Bestellung 2173 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 154+ | 0.56 EUR |
| 173+ | 0.49 EUR |
| 202+ | 0.42 EUR |
| 223+ | 0.38 EUR |
| 240+ | 0.36 EUR |
| 253+ | 0.33 EUR |
| KSA1013YTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 50MHz
Collector current: 1A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 50MHz
Collector current: 1A
auf Bestellung 3256 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.86 EUR |
| 158+ | 0.54 EUR |
| 208+ | 0.4 EUR |
| 235+ | 0.36 EUR |
| 277+ | 0.31 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| KSA1013YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO92
Frequency: 50MHz
Collector current: 1A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO92
Frequency: 50MHz
Collector current: 1A
auf Bestellung 5839 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 125+ | 0.68 EUR |
| 145+ | 0.58 EUR |
| 242+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| BZX85C12-T50R |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7918CTG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 105+ | 0.82 EUR |
| 146+ | 0.58 EUR |
| 161+ | 0.52 EUR |
| 174+ | 0.49 EUR |
| 187+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.38 EUR |
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 258+ | 0.33 EUR |
| 300+ | 0.29 EUR |
| 512+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 715+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| MC33079DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Number of channels: quad; 4
Bandwidth: 16MHz
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Number of channels: quad; 4
Bandwidth: 16MHz
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Operating temperature: -40...85°C
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 199+ | 0.43 EUR |
| 221+ | 0.38 EUR |
| 254+ | 0.33 EUR |
| 280+ | 0.31 EUR |
| 305+ | 0.27 EUR |
| 338+ | 0.25 EUR |
| 500+ | 0.24 EUR |
| MC33074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 0.8 EUR |
| 118+ | 0.73 EUR |
| 148+ | 0.58 EUR |
| 163+ | 0.52 EUR |
| MC33035DWR2G |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33074ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33074ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC04SC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Quiescent current: 20µA
auf Bestellung 271 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 0.71 EUR |
| 165+ | 0.51 EUR |
| 184+ | 0.46 EUR |
| 200+ | 0.43 EUR |
| 213+ | 0.4 EUR |
| MM74HCT74M |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 0.76 EUR |
| FCD380N60E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCP380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD280N60S5Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCPF380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV70LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33151DG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.65 EUR |
| MC33151PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Impulse rise time: 30ns
Supply voltage: 6.5...18V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Case: DIP8
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Impulse rise time: 30ns
Supply voltage: 6.5...18V DC
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 1.98 EUR |
| MC33151DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC34151DG |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.57 EUR |
| 65+ | 1.31 EUR |
| 66+ | 1.3 EUR |
| 1N5404RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
auf Bestellung 1127 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 264+ | 0.32 EUR |
| 334+ | 0.25 EUR |
| 379+ | 0.23 EUR |
| 432+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| MBRB20200CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MCT9001 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: DIP8
auf Bestellung 892 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 1.19 EUR |
| 125+ | 0.68 EUR |
| 138+ | 0.62 EUR |
| 148+ | 0.57 EUR |
| 160+ | 0.54 EUR |
| 500+ | 0.44 EUR |
| MCT9001SD |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: PDIP8
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
Manufacturer series: MCT9001
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: PDIP8
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
Manufacturer series: MCT9001
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 1.26 EUR |
| 99+ | 0.87 EUR |
| 116+ | 0.74 EUR |
| FQD5P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 1.02 EUR |
| 117+ | 0.73 EUR |
| 135+ | 0.63 EUR |
| 500+ | 0.57 EUR |
| MC74ACT161DG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 74ACT240MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.86 EUR |
| 75+ | 1.14 EUR |
| 90+ | 0.95 EUR |
| 103+ | 0.83 EUR |
| 111+ | 0.77 EUR |
| MC74ACT157DG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.76 EUR |
| 4N33M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Turn-on time: 5µs
Case: DIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Turn-on time: 5µs
Case: DIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
auf Bestellung 960 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 165+ | 0.51 EUR |
| 180+ | 0.48 EUR |
| 193+ | 0.44 EUR |
| 206+ | 0.42 EUR |
| 300+ | 0.37 EUR |
| 500+ | 0.35 EUR |
| 4N33SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
auf Bestellung 543 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 95+ | 0.9 EUR |
| 121+ | 0.7 EUR |
| 145+ | 0.58 EUR |
| 159+ | 0.54 EUR |
| 200+ | 0.49 EUR |
| 500+ | 0.42 EUR |
| 4N33SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-on time: 5µs
Case: Gull wing 6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Kind of output: Darlington
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-on time: 5µs
Case: Gull wing 6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Kind of output: Darlington
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33172DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.8MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.8MHz
auf Bestellung 2123 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 180+ | 0.48 EUR |
| 203+ | 0.42 EUR |
| 234+ | 0.37 EUR |
| 260+ | 0.33 EUR |
| 281+ | 0.3 EUR |
| 305+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| MC33171DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: single; 1
Bandwidth: 1.8MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: single; 1
Bandwidth: 1.8MHz
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| MC33152PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Output voltage: 0.8...11.2V
Kind of package: tube
Impulse rise time: 30ns
Supply voltage: 6.1...18V DC
Kind of output: non-inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Output voltage: 0.8...11.2V
Kind of package: tube
Impulse rise time: 30ns
Supply voltage: 6.1...18V DC
Kind of output: non-inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33164D-5G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 4.33V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 4.33V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 105+ | 0.82 EUR |
| 148+ | 0.57 EUR |
| 166+ | 0.51 EUR |
| MC33164D-3G |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 30mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 2.71V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 30mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 2.71V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 122+ | 0.7 EUR |
| 137+ | 0.62 EUR |