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6N137M 6N137M ONSEMI 6N137.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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FDA032N08 FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
auf Bestellung 33 Stücke:
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14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
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N64S830HAT22I ONSEMI N64S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22I ONSEMI N01S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22IT ONSEMI N01S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22I ONSEMI N01S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22IT ONSEMI N01S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N25S830HAS22I ONSEMI N25S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N25S830HAT22I ONSEMI N25S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N64S830HAS22I ONSEMI N64S830HA-D.pdf Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 ONSEMI fgy120t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD ONSEMI afgy120t65spd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29AG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
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41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
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TIP29CG TIP29CG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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TIP29BG TIP29BG ONSEMI TIP29A-C_TIP30A-C.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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S310 ONSEMI FAIR-S-A0002364049-1.pdf?t.download=true&u=5oefqw Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Produkt ist nicht verfügbar
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NTP095N65S3H ONSEMI ntp095n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP095N65S3HF ONSEMI ntp095n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVB095N65S3F ONSEMI nvb095n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL095N65S3H ONSEMI nthl095n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL095N65S3HF ONSEMI nthl095n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMT095N65S3H ONSEMI ntmt095n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF095N65S3H ONSEMI ntpf095n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N4004 1N4004 ONSEMI 1N4007-FAI.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
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BSR58 BSR58 ONSEMI bsr58-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
209+0.34 EUR
350+0.2 EUR
407+0.18 EUR
562+0.13 EUR
Mindestbestellmenge: 162
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CS51414EDR8G ONSEMI cs51411-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
auf Bestellung 2500 Stücke:
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29+2.53 EUR
39+1.87 EUR
42+1.72 EUR
50+1.7 EUR
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NCP160BFCS514T2G ONSEMI ncp160-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
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NCP160AFCS514T2G ONSEMI ncp160-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Produkt ist nicht verfügbar
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NCP161AFCS514T2G ONSEMI ncp161-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
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NCP161BFCS514T2G ONSEMI ncp161-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Produkt ist nicht verfügbar
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NCV1117DT50RKG ONSEMI ncp1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NXH240B120H3Q1P1G ONSEMI nxh240b120h3q1p1g-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Produkt ist nicht verfügbar
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FDD86252 FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
65+1.12 EUR
67+1.07 EUR
100+0.97 EUR
250+0.93 EUR
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FDS6673BZ FDS6673BZ ONSEMI FDS6673BZ.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2110 Stücke:
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57+1.26 EUR
73+0.99 EUR
81+0.89 EUR
100+0.74 EUR
250+0.66 EUR
500+0.65 EUR
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FDMC8651 FDMC8651 ONSEMI FDMC8651.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Produkt ist nicht verfügbar
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DTA123EET1G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123EM3T5G ONSEMI dta123e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123JET1G ONSEMI dta123j-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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MBRF30H100CTG MBRF30H100CTG ONSEMI mbr30h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
49+1.49 EUR
58+1.24 EUR
Mindestbestellmenge: 43
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MBR30H100CTG ONSEMI mbr30h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Produkt ist nicht verfügbar
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Produkt ist nicht verfügbar
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SB540 SB540 ONSEMI SB5100.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
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SZBZX84C10LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C10ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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STD5406NT4G-VF01 ONSEMI ntd5406n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NXH003P120M3F2PTHG ONSEMI nxh003p120m3f2pthg-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH003P120M3F2PTNG ONSEMI nxh003p120m3f2ptng-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH007F120M3F2PTHG ONSEMI nxh007f120m3f2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Case: PIM34
Mechanical mounting: screw
Topology: H-bridge
Technology: SiC
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Drain-source voltage: 1.2kV
Pulsed drain current: 447A
Drain current: 149A
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Power dissipation: 353W
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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NXH008T120M3F2PTHG ONSEMI nxh008t120m3f2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011F120M3F2PTHG ONSEMI nxh011f120m3f2pt-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011T120M3F2PTHG ONSEMI nxh011t120m3f2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH400N100H4Q2F2PG ONSEMI nxh400n100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Produkt ist nicht verfügbar
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M74HCT4852ADTR2G ONSEMI MC74HCT4851A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Produkt ist nicht verfügbar
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MC74HCT4851ADR2G MC74HCT4851ADR2G ONSEMI MC74HCT4851A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 11
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Produkt ist nicht verfügbar
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MC74HCT4852ADR2G MC74HCT4852ADR2G ONSEMI MC74HCT4851A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
Produkt ist nicht verfügbar
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SBCP56-16T3G SBCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BUV21G BUV21G ONSEMI BUV21.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
Produkt ist nicht verfügbar
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SBC807-16LT3G SBC807-16LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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6N137M 6N137.pdf
6N137M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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FDA032N08 fda032n08-d.pdf
FDA032N08
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.25 EUR
30+3.62 EUR
Mindestbestellmenge: 14
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N64S830HAT22I N64S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22I N01S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22IT N01S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22I N01S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830HAT22IT N01S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N25S830HAS22I N25S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N25S830HAT22I N25S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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N64S830HAS22I N64S830HA-D.pdf
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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FGY120T65SPD-F085 fgy120t65spd-f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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AFGY120T65SPD afgy120t65spd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Produkt ist nicht verfügbar
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TIP29AG TIP29A-C_TIP30A-C.pdf
TIP29AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
63+1.14 EUR
84+0.86 EUR
Mindestbestellmenge: 41
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TIP29CG TIP29A-C_TIP30A-C.pdf
TIP29CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
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TIP29BG TIP29A-C_TIP30A-C.pdf
TIP29BG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
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S310 FAIR-S-A0002364049-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Produkt ist nicht verfügbar
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NTP095N65S3H ntp095n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP095N65S3HF ntp095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVB095N65S3F nvb095n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL095N65S3H nthl095n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL095N65S3HF nthl095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMT095N65S3H ntmt095n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF095N65S3H ntpf095n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N4004 1N4007-FAI.pdf
1N4004
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
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BSR58 bsr58-d.pdf
BSR58
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
209+0.34 EUR
350+0.2 EUR
407+0.18 EUR
562+0.13 EUR
Mindestbestellmenge: 162
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CS51414EDR8G cs51411-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
39+1.87 EUR
42+1.72 EUR
50+1.7 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
NCP160BFCS514T2G ncp160-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Produkt ist nicht verfügbar
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NCP160AFCS514T2G ncp160-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.105V
Output current: 0.25A
Produkt ist nicht verfügbar
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NCP161AFCS514T2G ncp161-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Produkt ist nicht verfügbar
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NCP161BFCS514T2G ncp161-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 450mA; WLCSP4; SMD
Manufacturer series: NCP161
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Voltage drop: 0.185V
Output current: 0.45A
Produkt ist nicht verfügbar
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NCV1117DT50RKG ncp1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NXH240B120H3Q1P1G nxh240b120h3q1p1g-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Electrical mounting: Press-Fit
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Case: PIM32
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 92A
Pulsed collector current: 276A
Max. off-state voltage: 1.2kV
Technology: SiC
Semiconductor structure: SiC diode/transistor
Produkt ist nicht verfügbar
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FDD86252 fdd86252-d.pdf
FDD86252
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 103mΩ
Gate-source voltage: ±20V
Drain current: 27A
Power dissipation: 89W
Drain-source voltage: 150V
Technology: PowerTrench®
auf Bestellung 2327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
65+1.12 EUR
67+1.07 EUR
100+0.97 EUR
250+0.93 EUR
Mindestbestellmenge: 60
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FDS6673BZ description FDS6673BZ.pdf
FDS6673BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
73+0.99 EUR
81+0.89 EUR
100+0.74 EUR
250+0.66 EUR
500+0.65 EUR
Mindestbestellmenge: 57
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FDMC8651 FDMC8651.pdf
FDMC8651
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 27.2nC
On-state resistance: 9.3mΩ
Gate-source voltage: ±12V
Drain current: 20A
Drain-source voltage: 30V
Power dissipation: 41W
Produkt ist nicht verfügbar
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DTA123EET1G dta123e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123EM3T5G dta123e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123JET1G dta123j-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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MBRF30H100CTG mbr30h100ct-d.pdf
MBRF30H100CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.93V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
49+1.49 EUR
58+1.24 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
MBR30H100CTG mbr30h100ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
Kind of package: tube
Mounting: THT
Max. forward voltage: 0.8V
Load current: 15A x2
Max. load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5x6
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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NRVB30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Produkt ist nicht verfügbar
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.9V
Load current: 30A
Max. load current: 60A
Max. off-state voltage: 100V
Max. forward impulse current: 0.3kA
Application: automotive industry
Produkt ist nicht verfügbar
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SB540 SB5100.pdf
SB540
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 500pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
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SZBZX84C10LT1G BZX84B_BZX84C.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C10ET1G BZX84CxxET1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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STD5406NT4G-VF01 ntd5406n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; Idm: 150A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Pulsed drain current: 150A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NXH003P120M3F2PTHG nxh003p120m3f2pthg-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH003P120M3F2PTNG nxh003p120m3f2ptng-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH007F120M3F2PTHG nxh007f120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Case: PIM34
Mechanical mounting: screw
Topology: H-bridge
Technology: SiC
Kind of package: in-tray
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Drain-source voltage: 1.2kV
Pulsed drain current: 447A
Drain current: 149A
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Power dissipation: 353W
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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NXH008T120M3F2PTHG nxh008t120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011F120M3F2PTHG nxh011f120m3f2pt-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH011T120M3F2PTHG nxh011t120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
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NXH400N100H4Q2F2PG nxh400n100h4q2f2-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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M74HCT4852ADTR2G MC74HCT4851A-D.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 5
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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MC74HCT4851ADR2G MC74HCT4851A-D.pdf
MC74HCT4851ADR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of inputs: 11
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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MC74HCT4852ADR2G MC74HCT4851A-D.pdf
MC74HCT4852ADR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Manufacturer series: HCT
Kind of package: reel; tape
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS; TTL
Type of integrated circuit: digital
Family: HCT
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SBCP56-16T3G bcp56t1-d.pdf
SBCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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BUV21G BUV21.PDF
BUV21G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
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SBC807-16LT3G bc807-16lt1-d.pdf
SBC807-16LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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