SMMUN2215LT1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
| 6000+ | 0.045 EUR |
| 9000+ | 0.042 EUR |
| 15000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMMUN2215LT1G onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 Only.
Weitere Produktangebote SMMUN2215LT1G nach Preis ab 0.051 EUR bis 0.26 EUR
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SMMUN2215LT1G | Hersteller : onsemi |
Digital Transistors SS BR XSTR NPN 50V |
auf Bestellung 6467 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMUN2215LT1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 Only |
auf Bestellung 20700 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMUN2215LT1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SMMUN2215LT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Application: automotive industry Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SMMUN2215LT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Application: automotive industry Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Collector-emitter voltage: 50V Collector current: 0.1A |
Produkt ist nicht verfügbar |