Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142318) > Seite 2324 nach 2372

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2319 2320 2321 2322 2323 2324 2325 2326 2327 2328 2329 2370 2372  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CAT24C02TDI-GT3A CAT24C02TDI-GT3A ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C02WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C02YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP3063BDR2G NCP3063BDR2G ONSEMI NCP3063.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Output voltage: 1.25...40V DC
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1.5A
Input voltage: 3...40V DC
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
69+1.04 EUR
76+0.94 EUR
84+0.86 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
FODM3063 FODM3063 ONSEMI FODM3063.pdf Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; triac; Mini-flat 4pin; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac
Case: Mini-flat 4pin
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM306x
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.27 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
MBRB2545CTT4G MBRB2545CTT4G ONSEMI MBRB2545CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
32+2.3 EUR
40+1.79 EUR
46+1.56 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
MUR1540G MUR1540G ONSEMI MUR15xx.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 200A
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
MBRS1540T3G MBRS1540T3G ONSEMI MBRS1540T3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
192+0.37 EUR
215+0.33 EUR
235+0.3 EUR
256+0.28 EUR
286+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
FQPF27P06 FQPF27P06 ONSEMI FQPF27P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
37+1.93 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
FQB27P06TM FQB27P06TM ONSEMI FQB27P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N3772G 2N3772G ONSEMI 1578.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 20A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJ15001G
+1
 		MJ15001G ONSEMI mj15001-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV324DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV324DTBR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
173+0.41 EUR
193+0.37 EUR
221+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDG MC14512BDG ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C256YI-GT3 CAT24C256YI-GT3 ONSEMI cat24c256-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.4 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
NV24C256MUW3VTBG ONSEMI NV24C256MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C256WE-GT3 ONSEMI CAV24C256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C256YE-GT3 ONSEMI CAV24C256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1246BLD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165ADR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165ADTR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165AMN2TWG ONSEMI MC74HC165A-D.PDF Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165AMN2TWG-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS3590 FDS3590 ONSEMI fds3590-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
71+1.01 EUR
87+0.83 EUR
117+0.62 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.56 EUR
15+4.93 EUR
16+4.7 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H800NLT1G ONSEMI nvmfs6h800nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.63 EUR
17+4.42 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383YTA KSC2383YTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 3445 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
191+0.38 EUR
261+0.27 EUR
298+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383OTA KSC2383OTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1883 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
163+0.44 EUR
190+0.38 EUR
285+0.25 EUR
334+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101 FDMS86101 ONSEMI FDMS86101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Polarisation: unipolar
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 55nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 104W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101A ONSEMI fdms86101a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Polarisation: unipolar
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 58nC
On-state resistance: 13.5mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 104W
Pulsed drain current: 180A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101DC FDMS86101DC ONSEMI fdms86101dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDUL03N150CG ONSEMI ena2218-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP083N15A-F102 FDP083N15A-F102 ONSEMI fdp083n15a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.01 EUR
17+4.46 EUR
19+3.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTP7D3N15MC ONSEMI ntp7d3n15mc-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14021BDR2G MC14021BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Family: HEF4000B
Quiescent current: 600µA
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
177+0.4 EUR
216+0.33 EUR
265+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC14049BDG MC14049BDG ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
146+0.49 EUR
170+0.42 EUR
224+0.32 EUR
228+0.31 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC14082BDG MC14082BDG ONSEMI MC14082BDG.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
295+0.24 EUR
343+0.21 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MC14025BDG MC14025BDG ONSEMI MC14001B-D.pdf description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
MC14013BDTR2G ONSEMI MC14013B-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT74DG MC74ACT74DG ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT74DTR2G ONSEMI MC74AC74-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2D ES2D ONSEMI ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
281+0.25 EUR
348+0.21 EUR
379+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
ES2DAF ONSEMI ES2DAF-D.PDF es2daf-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTLJS17D0P03P8ZTAG ONSEMI ntljs17d0p03p8z-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS012P03P8ZTAG ONSEMI Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS012P03P8ZTAG ONSEMI nvtfs012p03p8z-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8187AMT330TAG ONSEMI ncv8187-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164ADR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164ADTR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164BDR2G ONSEMI mc74hc164b-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N93C66BT3ETAG ONSEMI N93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT93C66VI-GT3 ONSEMI CAT93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66VE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66YE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP9N90C FQP9N90C ONSEMI FQP9N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
22+3.33 EUR
50+3.12 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FQPF9N90CT FQPF9N90CT ONSEMI FQPF9N90C-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
20+3.76 EUR
23+3.15 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYW29-200G BYW29-200G ONSEMI BYW29-200G.PDF description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
61+1.19 EUR
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C02TDI-GT3A cat24c01-d.pdf
CAT24C02TDI-GT3A
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C02WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C02YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP3063BDR2G description NCP3063.pdf
NCP3063BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Output voltage: 1.25...40V DC
Case: SO8
Mounting: SMD
Number of channels: 1
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: 1.5A
Input voltage: 3...40V DC
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
auf Bestellung 1976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
69+1.04 EUR
76+0.94 EUR
84+0.86 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
FODM3063 FODM3063.pdf
FODM3063
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 600V; triac; Mini-flat 4pin; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 600V
Kind of output: triac
Case: Mini-flat 4pin
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM306x
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.27 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
MBRB2545CTT4G MBRB2545CTG.PDF
MBRB2545CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
32+2.3 EUR
40+1.79 EUR
46+1.56 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
MUR1540G MUR15xx.PDF
MUR1540G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 200A
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
MBRS1540T3G MBRS1540T3G-DTE.PDF
MBRS1540T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
192+0.37 EUR
215+0.33 EUR
235+0.3 EUR
256+0.28 EUR
286+0.25 EUR
500+0.24 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
FQPF27P06 FQPF27P06.pdf
FQPF27P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
37+1.93 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
FQB27P06TM FQB27P06.pdf
FQB27P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N3772G 1578.pdf
2N3772G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 20A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 150W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 200kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJ15001G mj15001-d.pdf
MJ15001G
+1
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV324DR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV324DTBR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
173+0.41 EUR
193+0.37 EUR
221+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
MC14512BDG mc14512b-d.pdf
MC14512BDG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: data selector
Number of channels: 8
Number of inputs: 8
Technology: TTL
Mounting: SMD
Case: SO16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C256YI-GT3 cat24c256-d.pdf
CAT24C256YI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.4 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
NV24C256MUW3VTBG NV24C256MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C256WE-GT3 CAV24C256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C256YE-GT3 CAV24C256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1246BLD065R2G ncp1246-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165ADR2G-Q mc74hc165a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: SOIC16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165ADTR2G-Q mc74hc165a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: TSSOP16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165AMN2TWG MC74HC165A-D.PDF
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Kind of output: complementary; push-pull
Case: QFN16
Family: HC
Trigger: positive-edge-triggered
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 1
Supply voltage: 2...6V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC165AMN2TWG-Q mc74hc165a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Kind of output: complementary
Case: QFN16
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of integrated circuit: parallel in; shift register
Number of inputs: 9
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS3590 fds3590-d.pdf
FDS3590
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
71+1.01 EUR
87+0.83 EUR
117+0.62 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 190A
Pulsed drain current: 1.44kA
Power dissipation: 250W
Case: D2PAK-6
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 249nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.56 EUR
15+4.93 EUR
16+4.7 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H800NLT1G nvmfs6h800nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.63 EUR
17+4.42 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383YTA KSC2383.pdf
KSC2383YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 3445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
191+0.38 EUR
261+0.27 EUR
298+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383OTA KSC2383.pdf
KSC2383OTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1883 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
163+0.44 EUR
190+0.38 EUR
285+0.25 EUR
334+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101 FDMS86101.pdf
FDMS86101
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Polarisation: unipolar
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 55nC
On-state resistance: 14mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 104W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101A fdms86101a-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Polarisation: unipolar
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate charge: 58nC
On-state resistance: 13.5mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 104W
Pulsed drain current: 180A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86101DC fdms86101dc-d.pdf
FDMS86101DC
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Polarisation: unipolar
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 13mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDUL03N150CG ena2218-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: TO3PF
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 10.5Ω
Drain current: 2.5A
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP083N15A-F102 fdp083n15a-d.pdf
FDP083N15A-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 294W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
On-state resistance: 8.3mΩ
Drain current: 83A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.01 EUR
17+4.46 EUR
19+3.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTP7D3N15MC ntp7d3n15mc-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 574A; 166W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 166W
Case: TO220-3
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 574A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14021BDR2G mc14014b-d.pdf
MC14021BDR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Family: HEF4000B
Quiescent current: 600µA
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
177+0.4 EUR
216+0.33 EUR
265+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC14049BDG mc14049b-d.pdf
MC14049BDG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
146+0.49 EUR
170+0.42 EUR
224+0.32 EUR
228+0.31 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC14082BDG MC14082BDG.PDF
MC14082BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
295+0.24 EUR
343+0.21 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MC14025BDG description MC14001B-D.pdf
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: tube
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
MC14013BDTR2G MC14013B-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT74DG mc74ac74-d.pdf
MC74ACT74DG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT74DTR2G MC74AC74-D.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES2D ES2(A-J)%20N0160%20REV.D.pdf es2d-d.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf
ES2D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
348+0.21 EUR
379+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
ES2DAF ES2DAF-D.PDF es2daf-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS012P03P8ZTAG
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS012P03P8ZTAG nvtfs012p03p8z-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -11.7A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -47A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8187AMT330TAG ncv8187-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.2A; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.2A
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164ADR2G-Q mc74hc164a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164ADTR2G-Q mc74hc164a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Delay time: 250ns
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC164BDR2G mc74hc164b-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of outputs: 8
Trigger: positive-edge-triggered
Kind of output: push-pull
Number of channels: 1
Number of inputs: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N93C66BT3ETAG N93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT93C66VI-GT3 CAT93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66VE-GT3 CAV93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66YE-GT3 CAV93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP9N90C FQP9N90C.pdf
FQP9N90C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
22+3.33 EUR
50+3.12 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
20+3.76 EUR
23+3.15 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYW29-200G description BYW29-200G.PDF
BYW29-200G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
61+1.19 EUR
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2319 2320 2321 2322 2323 2324 2325 2326 2327 2328 2329 2370 2372  [ Nächste Seite >> ]