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2N7002KT7G 2N7002KT7G ONSEMI 2n7002k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5260 Stücke:
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358+0.2 EUR
596+0.12 EUR
1226+0.058 EUR
1553+0.046 EUR
1799+0.04 EUR
2033+0.035 EUR
3500+0.034 EUR
Mindestbestellmenge: 358
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FDS4435BZ FDS4435BZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC7F0EAF8F4259&compId=FDS4435BZ.pdf?ci_sign=4e3b4b27557dd1929c9ebe5eb764fa744f2c0cf7 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2131 Stücke:
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75+0.96 EUR
123+0.58 EUR
153+0.47 EUR
168+0.43 EUR
250+0.38 EUR
500+0.36 EUR
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FGY160T65SPD-F085
+1
 		FGY160T65SPD-F085 ONSEMI fgy160t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
auf Bestellung 27 Stücke:
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5+15.84 EUR
10+14.8 EUR
Mindestbestellmenge: 5
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LM393EDR2G ONSEMI lm393-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
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ES3C ONSEMI ES3J-D.PDF es3a.pdf es3a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
Produkt ist nicht verfügbar
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BZX84C47LT1G BZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SS35 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SS351-TB-E ONSEMI Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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GBPC2506 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2506W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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NTD20P06LT4G NTD20P06LT4G ONSEMI NTD20P06-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
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75+0.96 EUR
79+0.92 EUR
86+0.84 EUR
94+0.76 EUR
105+0.68 EUR
120+0.6 EUR
130+0.55 EUR
200+0.53 EUR
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BSS138K BSS138K ONSEMI bss138k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6429 Stücke:
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278+0.26 EUR
472+0.15 EUR
717+0.1 EUR
847+0.085 EUR
1169+0.061 EUR
1306+0.055 EUR
3000+0.047 EUR
6000+0.044 EUR
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BSS138 BSS138 ONSEMI bss138-d.pdf 5399_BSS138%20SOT-23.PDF BSS138.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 273 Stücke:
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273+0.26 EUR
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2SK3557-6-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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2SK3557-7-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBZ6V8ALT1G MMBZ6V8ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.5A
auf Bestellung 1636 Stücke:
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556+0.13 EUR
770+0.093 EUR
1191+0.06 EUR
1475+0.048 EUR
1636+0.044 EUR
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SZMMBZ6V8ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Peak pulse power dissipation: 25W
Max. forward impulse current: 2.5A
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FDMS015N04B ONSEMI FDMS015N04B-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PCA9306FMUTCG ONSEMI PCA9306AMUTCG.pdf Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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PCA9306AMUTCG ONSEMI PCA9306AMUTCG.pdf Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
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PCA9306FMUTAG ONSEMI PCA9306AMUTCG.pdf Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
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MC74AC08DG MC74AC08DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE39886FFB020C7&compId=MC74AC08DG.PDF?ci_sign=ba642d9ca6c182c2786d62e2b707688f9ca5f0ae Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: AND
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 429 Stücke:
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114+0.63 EUR
159+0.45 EUR
177+0.4 EUR
192+0.37 EUR
197+0.36 EUR
Mindestbestellmenge: 114
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MC74AC32DG MC74AC32DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
auf Bestellung 303 Stücke:
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57+1.26 EUR
94+0.76 EUR
149+0.48 EUR
173+0.41 EUR
Mindestbestellmenge: 57
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FCB110N65F ONSEMI fcb110n65f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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NTS2101PT1G NTS2101PT1G ONSEMI nts2101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 900 Stücke:
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209+0.34 EUR
253+0.28 EUR
280+0.26 EUR
307+0.23 EUR
341+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 209
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NTZD3155CT2G NTZD3155CT2G ONSEMI ntzd3155c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3459 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
250+0.29 EUR
325+0.22 EUR
472+0.15 EUR
603+0.12 EUR
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MBT3904DW1T3G MBT3904DW1T3G ONSEMI mbt3904dw1t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 9497 Stücke:
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417+0.17 EUR
910+0.079 EUR
1299+0.055 EUR
1489+0.048 EUR
1645+0.043 EUR
1819+0.039 EUR
2000+0.036 EUR
5000+0.032 EUR
Mindestbestellmenge: 417
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GBPC1202 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Produkt ist nicht verfügbar
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1N4148-T26A 1N4148-T26A ONSEMI 1n914-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 27142 Stücke:
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625+0.11 EUR
1000+0.072 EUR
3013+0.024 EUR
4630+0.015 EUR
5320+0.013 EUR
6098+0.012 EUR
6494+0.011 EUR
10000+0.01 EUR
Mindestbestellmenge: 625
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ES1G ES1G ONSEMI ES1x.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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MC14518BDWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5800D3&compId=MC14518B-D.pdf?ci_sign=70038b5271aa293efe3a9cf24f730cf816f1f2c6 Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Produkt ist nicht verfügbar
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MC14518BDWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286EBB30A0D3&compId=MC14518B-D.pdf?ci_sign=553ea2062b9f5b8f698b26266b441aaa9ac056cb Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Produkt ist nicht verfügbar
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MBRS1100T3G MBRS1100T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699B75518C84469&compId=MBRS1100T3G.PDF?ci_sign=25ae38c58ba5d7f9276949c6b332c91542ccd773 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 10087 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
200+0.36 EUR
219+0.33 EUR
272+0.26 EUR
302+0.24 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
2500+0.12 EUR
Mindestbestellmenge: 162
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1N4736A-T50A 1N4736A-T50A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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1N4736ATR 1N4736ATR ONSEMI 1N47xxA.PDF description Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N5931BRLG 1N5931BRLG ONSEMI 1N59xxB.pdf Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 1702 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
338+0.21 EUR
439+0.16 EUR
486+0.15 EUR
582+0.12 EUR
Mindestbestellmenge: 218
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1N5344BRLG 1N5344BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
183+0.39 EUR
242+0.3 EUR
277+0.26 EUR
500+0.2 EUR
Mindestbestellmenge: 152
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1N5344BG 1N5344BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
309+0.23 EUR
332+0.22 EUR
334+0.21 EUR
Mindestbestellmenge: 278
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NCP45525IMNTWG-H ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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NCP45525IMNTWG-L ONSEMI ncp45524-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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NCP1337DR2G ONSEMI ncp1337-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
Produkt ist nicht verfügbar
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BC847BM3T5G BC847BM3T5G ONSEMI bc847bm3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
348+0.21 EUR
524+0.14 EUR
631+0.11 EUR
797+0.09 EUR
935+0.077 EUR
1080+0.066 EUR
Mindestbestellmenge: 250
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NRVB0540T1G NRVB0540T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE591CD00AD4538C469&compId=mbr0540.pdf?ci_sign=dcea4e3b73408d0a485fa55752de7ef298874441 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Load current: 0.5A
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
auf Bestellung 6595 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
256+0.28 EUR
305+0.23 EUR
385+0.19 EUR
532+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FDP3632 FDP3632 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE33690743E28&compId=FDB3632.pdf?ci_sign=b3680f3107d38a415f18e5077e2c8328a1368657 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.72 EUR
20+3.62 EUR
26+2.77 EUR
Mindestbestellmenge: 16
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ESD5B5.0ST1G ESD5B5.0ST1G ONSEMI ESD5B5.0-DTE.PDF description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 50W
Case: SOD523
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
491+0.15 EUR
550+0.13 EUR
870+0.082 EUR
1226+0.058 EUR
1421+0.05 EUR
Mindestbestellmenge: 417
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NUP4114UCLW1T2G NUP4114UCLW1T2G ONSEMI NUP4114.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
214+0.33 EUR
240+0.3 EUR
319+0.22 EUR
360+0.2 EUR
432+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 173
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NCP511SN18T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7F919B15C40CE&compId=NCP511_NCV511.PDF?ci_sign=8e1fc2dd67991141707d604bc8defde448a8aa65 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.16V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.8...6V
Output voltage: 1.8V
Manufacturer series: NCP511
Produkt ist nicht verfügbar
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FDMS8090 ONSEMI fdms8090-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74AC125DG MC74AC125DG ONSEMI MC74AC125DG.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
161+0.44 EUR
177+0.4 EUR
191+0.37 EUR
203+0.36 EUR
Mindestbestellmenge: 114
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MC74AC125DTR2G MC74AC125DTR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
161+0.45 EUR
183+0.39 EUR
224+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 125
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MC74AC245DTG MC74AC245DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
88+0.82 EUR
106+0.67 EUR
122+0.59 EUR
Mindestbestellmenge: 54
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BAT54T1G BAT54T1G ONSEMI bat54t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.086 EUR
1250+0.057 EUR
1902+0.038 EUR
2203+0.032 EUR
2451+0.029 EUR
2703+0.026 EUR
3087+0.023 EUR
Mindestbestellmenge: 834
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SZESD5B5.0ST1G ONSEMI esd5b5.0st1-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74ACT125DR2G MC74ACT125DR2G ONSEMI mc74ac125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MMSZ4V7T1G MMSZ4V7T1G ONSEMI MMSZxxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
auf Bestellung 2020 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1000+0.072 EUR
1367+0.052 EUR
1588+0.045 EUR
2020+0.036 EUR
Mindestbestellmenge: 715
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FDN306P FDN306P ONSEMI FDN306P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Gate charge: 17nC
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±8V
auf Bestellung 3674 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
242+0.3 EUR
323+0.22 EUR
368+0.19 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 173
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MBRS130LT3G MBRS130LT3G ONSEMI mbrs130.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
304+0.24 EUR
385+0.19 EUR
432+0.17 EUR
500+0.14 EUR
556+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
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FDV303N FDV303N ONSEMI pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14176 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
472+0.15 EUR
671+0.11 EUR
779+0.092 EUR
1051+0.068 EUR
1166+0.061 EUR
1500+0.058 EUR
3000+0.054 EUR
6000+0.051 EUR
Mindestbestellmenge: 334
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US1GFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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2N7002KT7G 2n7002k-d.pdf
2N7002KT7G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
596+0.12 EUR
1226+0.058 EUR
1553+0.046 EUR
1799+0.04 EUR
2033+0.035 EUR
3500+0.034 EUR
Mindestbestellmenge: 358
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FDS4435BZ description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC7F0EAF8F4259&compId=FDS4435BZ.pdf?ci_sign=4e3b4b27557dd1929c9ebe5eb764fa744f2c0cf7
FDS4435BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2131 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
123+0.58 EUR
153+0.47 EUR
168+0.43 EUR
250+0.38 EUR
500+0.36 EUR
Mindestbestellmenge: 75
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FGY160T65SPD-F085 fgy160t65spd-f085-d.pdf
FGY160T65SPD-F085
+1
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.84 EUR
10+14.8 EUR
Mindestbestellmenge: 5
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LM393EDR2G lm393-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Produkt ist nicht verfügbar
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ES3C ES3J-D.PDF es3a.pdf es3a.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
Produkt ist nicht verfügbar
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BZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C47LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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SZBZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SS35 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1SS351-TB-E
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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GBPC2506 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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GBPC2506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
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NTD20P06LT4G NTD20P06-DTE.PDF
NTD20P06LT4G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
79+0.92 EUR
86+0.84 EUR
94+0.76 EUR
105+0.68 EUR
120+0.6 EUR
130+0.55 EUR
200+0.53 EUR
Mindestbestellmenge: 75
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BSS138K bss138k-d.pdf
BSS138K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
472+0.15 EUR
717+0.1 EUR
847+0.085 EUR
1169+0.061 EUR
1306+0.055 EUR
3000+0.047 EUR
6000+0.044 EUR
Mindestbestellmenge: 278
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BSS138 bss138-d.pdf 5399_BSS138%20SOT-23.PDF BSS138.pdf
BSS138
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 273 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
273+0.26 EUR
Mindestbestellmenge: 273
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2SK3557-6-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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2SK3557-7-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBZ6V8ALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ6V8ALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: universal
Tolerance: ±5%
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 0.5µA
Max. forward impulse current: 2.5A
auf Bestellung 1636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
770+0.093 EUR
1191+0.06 EUR
1475+0.048 EUR
1636+0.044 EUR
Mindestbestellmenge: 556
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SZMMBZ6V8ALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Peak pulse power dissipation: 25W
Max. forward impulse current: 2.5A
Produkt ist nicht verfügbar
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FDMS015N04B FDMS015N04B-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PCA9306FMUTCG PCA9306AMUTCG.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
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PCA9306AMUTCG PCA9306AMUTCG.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Produkt ist nicht verfügbar
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PCA9306FMUTAG PCA9306AMUTCG.pdf
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
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MC74AC08DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE39886FFB020C7&compId=MC74AC08DG.PDF?ci_sign=ba642d9ca6c182c2786d62e2b707688f9ca5f0ae
MC74AC08DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: AND
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
159+0.45 EUR
177+0.4 EUR
192+0.37 EUR
197+0.36 EUR
Mindestbestellmenge: 114
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MC74AC32DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36
MC74AC32DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
94+0.76 EUR
149+0.48 EUR
173+0.41 EUR
Mindestbestellmenge: 57
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FCB110N65F fcb110n65f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Produkt ist nicht verfügbar
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NTS2101PT1G nts2101p-d.pdf
NTS2101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Kind of channel: enhancement
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
253+0.28 EUR
280+0.26 EUR
307+0.23 EUR
341+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 209
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NTZD3155CT2G ntzd3155c-d.pdf
NTZD3155CT2G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
250+0.29 EUR
325+0.22 EUR
472+0.15 EUR
603+0.12 EUR
Mindestbestellmenge: 162
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MBT3904DW1T3G mbt3904dw1t1-d.pdf
MBT3904DW1T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Mounting: SMD
auf Bestellung 9497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
910+0.079 EUR
1299+0.055 EUR
1489+0.048 EUR
1645+0.043 EUR
1819+0.039 EUR
2000+0.036 EUR
5000+0.032 EUR
Mindestbestellmenge: 417
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GBPC1202 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; Ufmax: 1.1V; If: 12A
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 200V
Kind of package: bulk
Leads: connectors FASTON
Case: GBPC
Produkt ist nicht verfügbar
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1N4148-T26A 1n914-d.pdf
1N4148-T26A
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 27142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1000+0.072 EUR
3013+0.024 EUR
4630+0.015 EUR
5320+0.013 EUR
6098+0.012 EUR
6494+0.011 EUR
10000+0.01 EUR
Mindestbestellmenge: 625
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ES1G ES1x.PDF
ES1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Capacitance: 10pF
Reverse recovery time: 35ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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MC14518BDWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627B9CA5800D3&compId=MC14518B-D.pdf?ci_sign=70038b5271aa293efe3a9cf24f730cf816f1f2c6
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: tube
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Produkt ist nicht verfügbar
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MC14518BDWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286EBB30A0D3&compId=MC14518B-D.pdf?ci_sign=553ea2062b9f5b8f698b26266b441aaa9ac056cb
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Kind of package: reel; tape
Mounting: SMD
Case: SO16WB
Number of channels: 2
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: BCD; up counter
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRS1100T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699B75518C84469&compId=MBRS1100T3G.PDF?ci_sign=25ae38c58ba5d7f9276949c6b332c91542ccd773
MBRS1100T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 10087 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
200+0.36 EUR
219+0.33 EUR
272+0.26 EUR
302+0.24 EUR
353+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
2500+0.12 EUR
Mindestbestellmenge: 162
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1N4736A-T50A 1N47xxA.PDF
1N4736A-T50A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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1N4736ATR description 1N47xxA.PDF
1N4736ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 10uA; 1N47xxA
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 6.8V
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N5931BRLG 1N59xxB.pdf
1N5931BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 1µA
auf Bestellung 1702 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
338+0.21 EUR
439+0.16 EUR
486+0.15 EUR
582+0.12 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
1N5344BRLG description 1N53xx.PDF
1N5344BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
183+0.39 EUR
242+0.3 EUR
277+0.26 EUR
500+0.2 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
1N5344BG 1N53xx.PDF
1N5344BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
309+0.23 EUR
332+0.22 EUR
334+0.21 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
NCP45525IMNTWG-H ncp45524-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: high
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP45525IMNTWG-L ncp45524-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Kind of package: reel; tape
Kind of output: N-Channel
On-state resistance: 31.7mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 6A
Type of integrated circuit: power switch
Case: DFN8
Active logical level: low
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1337DR2G ncp1337-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847BM3T5G bc847bm3-d.pdf
BC847BM3T5G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.26W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
348+0.21 EUR
524+0.14 EUR
631+0.11 EUR
797+0.09 EUR
935+0.077 EUR
1080+0.066 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
NRVB0540T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE591CD00AD4538C469&compId=mbr0540.pdf?ci_sign=dcea4e3b73408d0a485fa55752de7ef298874441
NRVB0540T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Load current: 0.5A
Max. load current: 1A
Max. forward impulse current: 5.5A
Max. off-state voltage: 40V
auf Bestellung 6595 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
256+0.28 EUR
305+0.23 EUR
385+0.19 EUR
532+0.13 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FDP3632 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE33690743E28&compId=FDB3632.pdf?ci_sign=b3680f3107d38a415f18e5077e2c8328a1368657
FDP3632
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.72 EUR
20+3.62 EUR
26+2.77 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
ESD5B5.0ST1G description ESD5B5.0-DTE.PDF
ESD5B5.0ST1G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 50W; 6.8V; bidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 50W
Case: SOD523
auf Bestellung 2308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
491+0.15 EUR
550+0.13 EUR
870+0.082 EUR
1226+0.058 EUR
1421+0.05 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
NUP4114UCLW1T2G NUP4114.PDF
NUP4114UCLW1T2G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; SC88; Ch: 4; reel,tape
Case: SC88
Version: ESD
Application: universal
Mounting: SMD
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Kind of package: reel; tape
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
214+0.33 EUR
240+0.3 EUR
319+0.22 EUR
360+0.2 EUR
432+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
NCP511SN18T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7F919B15C40CE&compId=NCP511_NCV511.PDF?ci_sign=8e1fc2dd67991141707d604bc8defde448a8aa65
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Operating temperature: -40...85°C
Output current: 0.15A
Voltage drop: 0.16V
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.8...6V
Output voltage: 1.8V
Manufacturer series: NCP511
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8090 fdms8090-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DG MC74AC125DG.PDF
MC74AC125DG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
161+0.44 EUR
177+0.4 EUR
191+0.37 EUR
203+0.36 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC125DTR2G mc74ac125-d.pdf
MC74AC125DTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
auf Bestellung 731 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
161+0.45 EUR
183+0.39 EUR
224+0.32 EUR
250+0.31 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC245DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C560D3&compId=MC74AC245-D.pdf?ci_sign=267d55e22d868668c229e33385eebf43ec7b025c
MC74AC245DTG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Kind of output: 3-state
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
88+0.82 EUR
106+0.67 EUR
122+0.59 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
BAT54T1G bat54t1-d.pdf
BAT54T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 3361 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
834+0.086 EUR
1250+0.057 EUR
1902+0.038 EUR
2203+0.032 EUR
2451+0.029 EUR
2703+0.026 EUR
3087+0.023 EUR
Mindestbestellmenge: 834
Im Einkaufswagen  Stück im Wert von  UAH
SZESD5B5.0ST1G esd5b5.0st1-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.8÷7.8V; bidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.8...7.8V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT125DR2G mc74ac125-d.pdf
MC74ACT125DR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4V7T1G MMSZxxxT1G.PDF
MMSZ4V7T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
auf Bestellung 2020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1000+0.072 EUR
1367+0.052 EUR
1588+0.045 EUR
2020+0.036 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
FDN306P FDN306P.pdf
FDN306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Gate charge: 17nC
On-state resistance: 80mΩ
Power dissipation: 0.5W
Gate-source voltage: ±8V
auf Bestellung 3674 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
242+0.3 EUR
323+0.22 EUR
368+0.19 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
MBRS130LT3G mbrs130.pdf
MBRS130LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
304+0.24 EUR
385+0.19 EUR
432+0.17 EUR
500+0.14 EUR
556+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDV303N pVersion=0046&contRep=ZT&docId=E20E08AD993A0FF1A303005056AB0C4F&compId=FDV303N.pdf?ci_sign=88cc801a301a7bf4624e67f601d940e550f21f85
FDV303N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
472+0.15 EUR
671+0.11 EUR
779+0.092 EUR
1051+0.068 EUR
1166+0.061 EUR
1500+0.058 EUR
3000+0.054 EUR
6000+0.051 EUR
Mindestbestellmenge: 334
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US1GFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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