| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FQA24N60 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.9A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MUR860G | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; Ifsm: 100A; TO220AC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 1.5V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP69T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 1284 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Current gain: 40 Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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74VHC595MTCX | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of output: latch |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC595MX | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: SO16 Manufacturer series: VHC Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Kind of output: latch Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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J112 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.625W Case: TO92 Gate-source voltage: -35V On-state resistance: 50Ω Mounting: THT Kind of package: bulk Gate current: 50mA |
auf Bestellung 2303 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDS9435A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4508 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT23; TO236AB Mounting: SMD Frequency: 100MHz Current gain: 200...450 Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
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BC846BPDW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SC70-6; SC88; SOT363 Mounting: SMD Frequency: 100MHz Current gain: 200...475 Kind of package: reel; tape Power dissipation: 0.38W Kind of transistor: complementary pair |
auf Bestellung 20534 Stücke: Lieferzeit 14-21 Tag (e) |
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4N25SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Case: Gull wing 6 Mounting: SMD CTR@If: 20%@10mA Kind of output: transistor Insulation voltage: 7.5kV Type of optocoupler: optocoupler Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Collector-emitter voltage: 30V |
auf Bestellung 1177 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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4N25SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Case: Gull wing 6 Mounting: SMD CTR@If: 20%@10mA Kind of output: transistor Insulation voltage: 7.5kV Type of optocoupler: optocoupler Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Collector-emitter voltage: 30V |
Produkt ist nicht verfügbar |
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MMBT2222LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 6153 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC848ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2017 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSP2907ABU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Mounting: THT Type of transistor: PNP Current gain: 100...300 Kind of package: bulk Case: TO92 Frequency: 200MHz Collector current: 0.6A Collector-emitter voltage: 60V Power dissipation: 0.625W Polarisation: bipolar |
auf Bestellung 7630 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP2907ACTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Mounting: THT Type of transistor: PNP Current gain: 100...300 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 200MHz Collector current: 0.6A Collector-emitter voltage: 60V Power dissipation: 0.625W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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KSP2907ATA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Mounting: THT Type of transistor: PNP Current gain: 100...300 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 200MHz Collector current: 0.6A Collector-emitter voltage: 60V Power dissipation: 0.625W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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KSP2907ATF | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Mounting: THT Type of transistor: PNP Current gain: 100...300 Kind of package: reel; tape Case: TO92 Formed Frequency: 200MHz Collector current: 0.6A Collector-emitter voltage: 60V Power dissipation: 0.625W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FCD4N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2433 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Mounting: THT Case: DIP6 Trigger current: 10mA Kind of output: zero voltage crossing driver Insulation voltage: 5.3kV Max. off-state voltage: 3V Type of optocoupler: optotriac Output voltage: 600V |
auf Bestellung 1303 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Manufacturer series: MOC3062M Slew rate: 0.6kV/μs Number of channels: 1 |
Produkt ist nicht verfügbar |
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MOC3062TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Trigger current: 10mA Mounting: THT Manufacturer series: MOC3062M Slew rate: 0.6kV/μs Number of channels: 1 |
Produkt ist nicht verfügbar |
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MUR1560G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220AC; tube; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 60ns |
Produkt ist nicht verfügbar |
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SBC856ALT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUS2MA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BAW56LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 11611 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Features of semiconductor devices: fast switching Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC517-D74Z | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Mounting: THT Collector-emitter voltage: 30V Power dissipation: 0.625W Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Kind of package: Ammo Pack Case: TO92 Collector current: 1.2A |
auf Bestellung 1282 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FCD5N60TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK On-state resistance: 0.95Ω Power dissipation: 54W Gate charge: 16nC Polarisation: unipolar Technology: SuperFET® Drain current: 2.9A |
auf Bestellung 2478 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: reel; tape Case: DPAK On-state resistance: 2Ω Power dissipation: 83W Polarisation: unipolar Drain current: 2.4A |
auf Bestellung 2395 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD5N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Drain-source voltage: 600V Drain current: 1.8A Case: DPAK Polarisation: unipolar On-state resistance: 2.5Ω Power dissipation: 49W Kind of channel: enhancement Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FQU5N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Drain-source voltage: 600V Drain current: 1.8A Case: IPAK Polarisation: unipolar On-state resistance: 2.5Ω Pulsed drain current: 11.2A Power dissipation: 49W Kind of channel: enhancement Gate charge: 19nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TLV431ALPG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: bulk Maximum output current: 20mA |
Produkt ist nicht verfügbar |
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TLV431ALPRAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 1158 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431ASN1T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
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TLV431ASNT1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 2578 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BLPRAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BSN1T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLV431BSNT1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TLV431CSN1T1G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP45521IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 10.5A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 9.5/22.5mΩ |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH104N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP122G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP8N50NZ | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDA28N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 112A |
auf Bestellung 72 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3022VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 400V Kind of output: triac Case: DIP6 Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM |
auf Bestellung 362 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 100...300MHz Current gain: 50...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N5550TFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz Current gain: 50...200 |
auf Bestellung 1174 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1N914BWS | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape Reverse recovery time: 4ns Max. forward voltage: 1V |
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 |
1N914BWT | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Semiconductor structure: single diode Case: SOD523F Kind of package: reel; tape Reverse recovery time: 4ns Leakage current: 5µA Capacitance: 4pF Max. forward voltage: 1V Power dissipation: 0.2W Features of semiconductor devices: fast switching |
auf Bestellung 6351 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT245ADTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MC74HCT245ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Quiescent current: 160µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MC74HCT245ADWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Quiescent current: 160µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74HCT245ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MM74HCT245MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
MM74HCT245MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Quiescent current: 160µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MM74HCT245WM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
auf Bestellung 1374 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MM74HCT245WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
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|
2N6043G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube Kind of transistor: Darlington Collector current: 8A Collector-emitter voltage: 60V |
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| FQA24N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR860G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; Ifsm: 100A; TO220AC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
| BCP69T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 1284 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBTA42LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 40
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Current gain: 40
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| 74VHC595MTCX |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of output: latch
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of output: latch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC595MX |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
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Im Einkaufswagen
Stück im Wert von UAH
| J112 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 50Ω
Mounting: THT
Kind of package: bulk
Gate current: 50mA
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: -35V
On-state resistance: 50Ω
Mounting: THT
Kind of package: bulk
Gate current: 50mA
auf Bestellung 2303 Stücke:
Lieferzeit 14-21 Tag (e)
| FDS9435A |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4508 Stücke:
Lieferzeit 14-21 Tag (e)
| BC846BLT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.225W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 200...450
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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| BC846BPDW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Frequency: 100MHz
Current gain: 200...475
Kind of package: reel; tape
Power dissipation: 0.38W
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Frequency: 100MHz
Current gain: 200...475
Kind of package: reel; tape
Power dissipation: 0.38W
Kind of transistor: complementary pair
auf Bestellung 20534 Stücke:
Lieferzeit 14-21 Tag (e)
| 4N25SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: Gull wing 6
Mounting: SMD
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: Gull wing 6
Mounting: SMD
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
auf Bestellung 1177 Stücke:
Lieferzeit 14-21 Tag (e)
| 4N25SR2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: Gull wing 6
Mounting: SMD
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: Gull wing 6
Mounting: SMD
CTR@If: 20%@10mA
Kind of output: transistor
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
Produkt ist nicht verfügbar
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| MMBT2222LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 6153 Stücke:
Lieferzeit 14-21 Tag (e)
| BC848ALT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| BC848BLT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2017 Stücke:
Lieferzeit 14-21 Tag (e)
| KSP2907ABU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: bulk
Case: TO92
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: bulk
Case: TO92
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
auf Bestellung 7630 Stücke:
Lieferzeit 14-21 Tag (e)
| KSP2907ACTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ATA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ATF |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: reel; tape
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Mounting: THT
Type of transistor: PNP
Current gain: 100...300
Kind of package: reel; tape
Case: TO92 Formed
Frequency: 200MHz
Collector current: 0.6A
Collector-emitter voltage: 60V
Power dissipation: 0.625W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD4N60TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2433 Stücke:
Lieferzeit 14-21 Tag (e)
| MOC3062M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Mounting: THT
Case: DIP6
Trigger current: 10mA
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Mounting: THT
Case: DIP6
Trigger current: 10mA
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Max. off-state voltage: 3V
Type of optocoupler: optotriac
Output voltage: 600V
auf Bestellung 1303 Stücke:
Lieferzeit 14-21 Tag (e)
| MOC3062SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MOC3062TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1560G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220AC; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220AC; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC856ALT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
| NRVUS2MA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAW56LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 11611 Stücke:
Lieferzeit 14-21 Tag (e)
| BAW56LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| BC517-D74Z |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: Ammo Pack
Case: TO92
Collector current: 1.2A
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Mounting: THT
Collector-emitter voltage: 30V
Power dissipation: 0.625W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: Ammo Pack
Case: TO92
Collector current: 1.2A
auf Bestellung 1282 Stücke:
Lieferzeit 14-21 Tag (e)
| FCD5N60TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Technology: SuperFET®
Drain current: 2.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Technology: SuperFET®
Drain current: 2.9A
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
| FDD5N60NZTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 2Ω
Power dissipation: 83W
Polarisation: unipolar
Drain current: 2.4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 2Ω
Power dissipation: 83W
Polarisation: unipolar
Drain current: 2.4A
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
| FQD5N60CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Drain-source voltage: 600V
Drain current: 1.8A
Case: DPAK
Polarisation: unipolar
On-state resistance: 2.5Ω
Power dissipation: 49W
Kind of channel: enhancement
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Drain-source voltage: 600V
Drain current: 1.8A
Case: DPAK
Polarisation: unipolar
On-state resistance: 2.5Ω
Power dissipation: 49W
Kind of channel: enhancement
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| FQU5N60CTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Drain-source voltage: 600V
Drain current: 1.8A
Case: IPAK
Polarisation: unipolar
On-state resistance: 2.5Ω
Pulsed drain current: 11.2A
Power dissipation: 49W
Kind of channel: enhancement
Gate charge: 19nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Drain-source voltage: 600V
Drain current: 1.8A
Case: IPAK
Polarisation: unipolar
On-state resistance: 2.5Ω
Pulsed drain current: 11.2A
Power dissipation: 49W
Kind of channel: enhancement
Gate charge: 19nC
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ALPG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ALPRAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 1158 Stücke:
Lieferzeit 14-21 Tag (e)
| TLV431ASN1T1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ASNT1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 2578 Stücke:
Lieferzeit 14-21 Tag (e)
| TLV431BLPRAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
| TLV431BSN1T1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| TLV431BSNT1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431CSN1T1G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP45521IMNTWG-H |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 9.5/22.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 9.5/22.5mΩ
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| FCH104N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| TIP122G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| FDP8N50NZ |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDA28N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 112A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 112A
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
| MOC3022VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 362 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N5550TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
Current gain: 50...200
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
Current gain: 50...200
Produkt ist nicht verfügbar
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| 2N5550TFR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
Current gain: 50...200
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
Current gain: 50...200
auf Bestellung 1174 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N914BWS |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Reverse recovery time: 4ns
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Reverse recovery time: 4ns
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N914BWT |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD523F
Kind of package: reel; tape
Reverse recovery time: 4ns
Leakage current: 5µA
Capacitance: 4pF
Max. forward voltage: 1V
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: single diode
Case: SOD523F
Kind of package: reel; tape
Reverse recovery time: 4ns
Leakage current: 5µA
Capacitance: 4pF
Max. forward voltage: 1V
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
auf Bestellung 6351 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74HCT245ADTG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74HCT245ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT245ADWG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT245ADWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT245MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT245MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT245WM |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
auf Bestellung 1374 Stücke:
Lieferzeit 14-21 Tag (e)
| MM74HCT245WMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N6043G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Collector current: 8A
Collector-emitter voltage: 60V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Collector current: 8A
Collector-emitter voltage: 60V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)