NVMFS6H800NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS6H800NLT1G onsemi
Description: ONSEMI - NVMFS6H800NLT1G - Leistungs-MOSFET, n-Kanal, 80 V, 224 A, 1900 µohm, DFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 224A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2V, Verlustleistung: 214W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: DFN, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1900µohm.
Weitere Produktangebote NVMFS6H800NLT1G nach Preis ab 4.13 EUR bis 10.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVMFS6H800NLT1G | ONSEMI |
Description: ONSEMI - NVMFS6H800NLT1G - Leistungs-MOSFET, n-Kanal, 80 V, 224 A, 1900 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 224A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 214W SVHC: Lead (25-Jun-2025) Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1900µohm |
auf Bestellung 19500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H800NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 224A Pulsed drain current: 900A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1266 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H800NLT1G | onsemi |
MOSFETs T8 80V LL NFET |
auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H800NLT1G | onsemi |
Description: MOSFET N-CH 80V 30A/224A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 330µA Power Dissipation (Max): 3.9W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 5295 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H800NLT1G | ON Semiconductor |
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auf Bestellung 903 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H800NLT1G |
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Hersteller: ONSEMI
Description: ONSEMI - NVMFS6H800NLT1G - Leistungs-MOSFET, n-Kanal, 80 V, 224 A, 1900 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 224A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 214W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1900µohm
Description: ONSEMI - NVMFS6H800NLT1G - Leistungs-MOSFET, n-Kanal, 80 V, 224 A, 1900 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 224A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 214W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1900µohm
auf Bestellung 19500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 4.55 EUR |
| 4500+ | 4.13 EUR |
| NVMFS6H800NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.7 EUR |
| 17+ | 5.26 EUR |
| NVMFS6H800NLT1G |
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Hersteller: onsemi
MOSFETs T8 80V LL NFET
MOSFETs T8 80V LL NFET
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.48 EUR |
| 10+ | 6.64 EUR |
| 100+ | 5.32 EUR |
| 500+ | 5.11 EUR |
| 1000+ | 4.52 EUR |
| NVMFS6H800NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.31 EUR |
| 10+ | 6.89 EUR |
| 100+ | 4.95 EUR |
| 500+ | 4.83 EUR |
| NVMFS6H800NLT1G |
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Hersteller: ON Semiconductor
auf Bestellung 903 Stücke:
Lieferzeit 21-28 Tag (e)