NVMFS6H800NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 3.32 EUR |
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Technische Details NVMFS6H800NLT1G onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 330µA, Power Dissipation (Max): 3.9W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFS6H800NLT1G nach Preis ab 3.8 EUR bis 8.66 EUR
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NVMFS6H800NLT1G | onsemi |
MOSFETs T8 80V LL NFET |
auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H800NLT1G | onsemi |
Description: MOSFET N-CH 80V 30A/224A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 330µA Power Dissipation (Max): 3.9W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 5295 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H800NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 224A Pulsed drain current: 900A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1380 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS6H800NLT1G | ON Semiconductor |
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auf Bestellung 903 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H800NLT1G |
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Hersteller: onsemi
MOSFETs T8 80V LL NFET
MOSFETs T8 80V LL NFET
auf Bestellung 1390 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.97 EUR |
| 10+ | 5.58 EUR |
| 100+ | 4.47 EUR |
| 500+ | 4.29 EUR |
| 1000+ | 3.8 EUR |
| NVMFS6H800NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 30A/224A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 330µA
Power Dissipation (Max): 3.9W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 224A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 5295 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.66 EUR |
| 10+ | 5.79 EUR |
| 100+ | 4.16 EUR |
| 500+ | 4.06 EUR |
| NVMFS6H800NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.63 EUR |
| 17+ | 4.42 EUR |
| NVMFS6H800NLT1G |
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Hersteller: ON Semiconductor
auf Bestellung 903 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH