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AFGHL40T65SQD ONSEMI afghl40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
Produkt ist nicht verfügbar
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MBRD835LT4G MBRD835LT4G ONSEMI MBRD835LG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.27 EUR
Mindestbestellmenge: 56
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BC807-25LT3G BC807-25LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC807-25LT3G SBC807-25LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC807-25WT1G SBC807-25WT1G ONSEMI bc807-25w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MMSD4148T1G MMSD4148T1G ONSEMI MMSD4148T1.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
auf Bestellung 3057 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
2084+0.034 EUR
2174+0.033 EUR
2428+0.029 EUR
2578+0.028 EUR
2778+0.026 EUR
2959+0.024 EUR
3057+0.023 EUR
Mindestbestellmenge: 1000
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MMSD4148T3G MMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
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SMMSD4148T1G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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SMMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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NTHL160N120SC1 NTHL160N120SC1 ONSEMI NTHL160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTBG160N120SC1 ONSEMI ntbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVBG160N120SC1 ONSEMI nvbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVHL160N120SC1 ONSEMI nvhl160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI NTH4L160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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NVH4L160N120SC1 ONSEMI nvh4l160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Produkt ist nicht verfügbar
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FGH50T65SQD-F155 FGH50T65SQD-F155 ONSEMI FGH50T65SQD.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.95 EUR
17+4.45 EUR
19+3.93 EUR
30+3.55 EUR
Mindestbestellmenge: 15
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MOC3022SM ONSEMI moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Output voltage: 400V
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MOC3022SR2VM ONSEMI moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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LM385BZ-1.2RAG LM385BZ-1.2RAG ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Produkt ist nicht verfügbar
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MC14081BDR2G MC14081BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: reel; tape
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
auf Bestellung 2053 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
218+0.33 EUR
244+0.29 EUR
290+0.25 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
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1N914 1N914 ONSEMI 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw 1N914.pdf 1N914.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
auf Bestellung 8263 Stücke:
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715+0.1 EUR
1471+0.049 EUR
2605+0.027 EUR
3732+0.019 EUR
4311+0.017 EUR
4951+0.014 EUR
5618+0.013 EUR
Mindestbestellmenge: 715
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FDA24N50F FDA24N50F ONSEMI fda24n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.79 EUR
30+3.4 EUR
Mindestbestellmenge: 19
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MC78M15CDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ABDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ACDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NXH020U90MNF2PTG ONSEMI NXH020U90MNF2PTG.PDF Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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MC7815BD2TR4G ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
135+0.53 EUR
149+0.48 EUR
169+0.42 EUR
200+0.4 EUR
500+0.38 EUR
Mindestbestellmenge: 97
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NGTB75N65FL2WG ONSEMI ngtb75n65fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
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SZESD5Z5.0T1G ONSEMI esd5z2.5t1-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDP8860 FDP8860 ONSEMI fdp8860-d.pdf FAIRS24307-1.pdf?t.download=true&u=5oefqw cd2a566805c21f3b24b835958e72f586.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
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MUR4100ERLG MUR4100ERLG ONSEMI MUR4100EG.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
125+0.57 EUR
156+0.46 EUR
167+0.43 EUR
Mindestbestellmenge: 80
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MC33179DR2G MC33179DR2G ONSEMI MC33179DG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
auf Bestellung 2458 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
127+0.57 EUR
140+0.51 EUR
163+0.44 EUR
250+0.4 EUR
500+0.37 EUR
Mindestbestellmenge: 95
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NCP1654BD65R2G NCP1654BD65R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1654BD200R2G NCP1654BD200R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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1N4743ATR 1N4743ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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1N4743A 1N4743A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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LP2951CD-3.0R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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FXL4TD245BQX FXL4TD245BQX ONSEMI FXL4TD245BQX.pdf Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
auf Bestellung 1982 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
64+1.13 EUR
65+1.1 EUR
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SZMM3Z18VT1G SZMM3Z18VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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Lieferzeit 14-21 Tag (e)
625+0.11 EUR
910+0.079 EUR
1147+0.062 EUR
1257+0.057 EUR
1511+0.047 EUR
Mindestbestellmenge: 625
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FDPF55N06 FDPF55N06 ONSEMI fdpf55n06-d.pdf FAIRS45691-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Pulsed drain current: 220A
Kind of package: tube
On-state resistance: 0.22Ω
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Lieferzeit 14-21 Tag (e)
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NC7SZ175P6X NC7SZ175P6X ONSEMI NC7SZ175-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2253 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1000+0.072 EUR
1180+0.061 EUR
1270+0.056 EUR
Mindestbestellmenge: 715
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BZX84C10LT1G BZX84C10LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1163+0.061 EUR
1690+0.042 EUR
2017+0.035 EUR
2526+0.028 EUR
2759+0.026 EUR
Mindestbestellmenge: 715
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MOC3052M MOC3052M ONSEMI MOC3052M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3052M
Output voltage: 600V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
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SBAV99LT3G SBAV99LT3G ONSEMI bav99lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 8748 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
2632+0.027 EUR
3106+0.023 EUR
5000+0.021 EUR
Mindestbestellmenge: 715
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4N35M 4N35M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
211+0.34 EUR
228+0.31 EUR
242+0.3 EUR
257+0.28 EUR
500+0.24 EUR
Mindestbestellmenge: 125
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NTB190N65S3HF ONSEMI ntb190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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FCP190N65F ONSEMI fcp190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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NVB190N65S3F ONSEMI nvb190n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
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FCH190N65F-F155 ONSEMI fch190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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FCP190N65S3 ONSEMI fcp190n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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FCP190N65S3R0 ONSEMI fcp190n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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NTPF190N65S3HF ONSEMI ntpf190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTHL190N65S3HF ONSEMI nthl190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTMT190N65S3H ONSEMI ntmt190n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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NTMT190N65S3HF ONSEMI ntmt190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTPF190N65S3H ONSEMI ntpf190n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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SBAS40-06LT1G SBAS40-06LT1G ONSEMI bas40-06lt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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MMBT3904 MMBT3904 ONSEMI MMBT3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NTHL040N65S3HF ONSEMI nthl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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AFGHL40T65SQD afghl40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
Produkt ist nicht verfügbar
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MBRD835LT4G MBRD835LG.PDF
MBRD835LT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.27 EUR
Mindestbestellmenge: 56
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BC807-25LT3G bc807-16lt1-d.pdf
BC807-25LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC807-25LT3G bc807-16lt1-d.pdf
SBC807-25LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBC807-25WT1G bc807-25w-d.pdf
SBC807-25WT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMSD4148T1G MMSD4148T1.PDF
MMSD4148T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
auf Bestellung 3057 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
2084+0.034 EUR
2174+0.033 EUR
2428+0.029 EUR
2578+0.028 EUR
2778+0.026 EUR
2959+0.024 EUR
3057+0.023 EUR
Mindestbestellmenge: 1000
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MMSD4148T3G mmsd4148t1-d.pdf
MMSD4148T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
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SMMSD4148T1G mmsd4148t1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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SMMSD4148T3G mmsd4148t1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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NTHL160N120SC1 NTHL160N120SC1.PDF
NTHL160N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTBG160N120SC1 ntbg160n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVBG160N120SC1 nvbg160n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVHL160N120SC1 nvhl160n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Produkt ist nicht verfügbar
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NTH4L160N120SC1 NTH4L160N120SC1.PDF
NTH4L160N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Produkt ist nicht verfügbar
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NVH4L160N120SC1 nvh4l160n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Produkt ist nicht verfügbar
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FGH50T65SQD-F155 FGH50T65SQD.PDF
FGH50T65SQD-F155
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.95 EUR
17+4.45 EUR
19+3.93 EUR
30+3.55 EUR
Mindestbestellmenge: 15
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MOC3022SM moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Output voltage: 400V
Produkt ist nicht verfügbar
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MOC3022SR2VM moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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LM385BZ-1.2RAG LM285_LM385B.PDF
LM385BZ-1.2RAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Produkt ist nicht verfügbar
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MC14081BDR2G MC14001B-D.pdf
MC14081BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: reel; tape
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
auf Bestellung 2053 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
218+0.33 EUR
244+0.29 EUR
290+0.25 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
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1N914 1n914-d.pdf FAIR-S-A0001232564-1.pdf?t.download=true&u=5oefqw 1N914.pdf 1N914.pdf
1N914
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
auf Bestellung 8263 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1471+0.049 EUR
2605+0.027 EUR
3732+0.019 EUR
4311+0.017 EUR
4951+0.014 EUR
5618+0.013 EUR
Mindestbestellmenge: 715
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FDA24N50F fda24n50f-d.pdf
FDA24N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
30+3.4 EUR
Mindestbestellmenge: 19
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MC78M15CDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC78M15ABDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC78M15ACDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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NXH020U90MNF2PTG NXH020U90MNF2PTG.PDF
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MC7815BD2TR4G mc7800-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
135+0.53 EUR
149+0.48 EUR
169+0.42 EUR
200+0.4 EUR
500+0.38 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
NGTB75N65FL2WG ngtb75n65fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SZESD5Z5.0T1G esd5z2.5t1-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP8860 fdp8860-d.pdf FAIRS24307-1.pdf?t.download=true&u=5oefqw cd2a566805c21f3b24b835958e72f586.pdf
FDP8860
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MUR4100ERLG MUR4100EG.PDF
MUR4100ERLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
125+0.57 EUR
156+0.46 EUR
167+0.43 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
MC33179DR2G MC33179DG.PDF
MC33179DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
auf Bestellung 2458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
127+0.57 EUR
140+0.51 EUR
163+0.44 EUR
250+0.4 EUR
500+0.37 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
NCP1654BD65R2G ncp1654-d.pdf
NCP1654BD65R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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NCP1654BD200R2G ncp1654-d.pdf
NCP1654BD200R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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1N4743ATR 1N47xxA.PDF
1N4743ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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1N4743A 1N47xxA.PDF
1N4743A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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LP2951CD-3.0R2G lp2950-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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FXL4TD245BQX FXL4TD245BQX.pdf
FXL4TD245BQX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
auf Bestellung 1982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
64+1.13 EUR
65+1.1 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
SZMM3Z18VT1G MM3ZxxT1G.PDF
SZMM3Z18VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
910+0.079 EUR
1147+0.062 EUR
1257+0.057 EUR
1511+0.047 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
FDPF55N06 fdpf55n06-d.pdf FAIRS45691-1.pdf?t.download=true&u=5oefqw
FDPF55N06
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Pulsed drain current: 220A
Kind of package: tube
On-state resistance: 0.22Ω
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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NC7SZ175P6X NC7SZ175-D.pdf
NC7SZ175P6X
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1000+0.072 EUR
1180+0.061 EUR
1270+0.056 EUR
Mindestbestellmenge: 715
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BZX84C10LT1G BZX84B_BZX84C.PDF
BZX84C10LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1163+0.061 EUR
1690+0.042 EUR
2017+0.035 EUR
2526+0.028 EUR
2759+0.026 EUR
Mindestbestellmenge: 715
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MOC3052M MOC3052M-ONS.PDF
MOC3052M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Manufacturer series: MOC3052M
Output voltage: 600V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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SBAV99LT3G bav99lt1-d.pdf
SBAV99LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 8748 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
2632+0.027 EUR
3106+0.023 EUR
5000+0.021 EUR
Mindestbestellmenge: 715
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4N35M 4N25M-ONS.pdf
4N35M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
211+0.34 EUR
228+0.31 EUR
242+0.3 EUR
257+0.28 EUR
500+0.24 EUR
Mindestbestellmenge: 125
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NTB190N65S3HF ntb190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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FCP190N65F fcp190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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NVB190N65S3F nvb190n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
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FCH190N65F-F155 fch190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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FCP190N65S3 fcp190n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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FCP190N65S3R0 fcp190n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
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NTPF190N65S3HF ntpf190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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NTMT190N65S3H ntmt190n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
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NTMT190N65S3HF ntmt190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTPF190N65S3H ntpf190n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
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SBAS40-06LT1G bas40-06lt1-d.pdf
SBAS40-06LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
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MMBT3904 MMBT3904.pdf
MMBT3904
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NTHL040N65S3HF nthl040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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1N4148WS 1N4148WS.pdf
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 4pF
Case: SOD323F
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.2W
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