MMUN2111LT3G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 1993+ | 0.073 EUR |
| 2802+ | 0.051 EUR |
| 3704+ | 0.038 EUR |
| 3832+ | 0.036 EUR |
| 5000+ | 0.03 EUR |
| 10000+ | 0.024 EUR |
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Produktbewertung abgeben
Technische Details MMUN2111LT3G ON Semiconductor
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote MMUN2111LT3G nach Preis ab 0.038 EUR bis 0.33 EUR
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MMUN2111LT3G | onsemi |
 Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 6422 Stücke: Lieferzeit 10-14 Tag (e) |
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MMUN2111LT3G | onsemi |
Digital Transistors 100mA 50V BRT PNP |
auf Bestellung 70000 Stücke: Lieferzeit 318-322 Tag (e) |
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| MMUN2111LT3G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 6422 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.21 EUR |
| 136+ | 0.13 EUR |
| 219+ | 0.08 EUR |
| 500+ | 0.058 EUR |
| 1000+ | 0.051 EUR |
| 2000+ | 0.045 EUR |
| 5000+ | 0.038 EUR |
| MMUN2111LT3G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT PNP
Digital Transistors 100mA 50V BRT PNP
auf Bestellung 70000 Stücke:
Lieferzeit 318-322 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 18+ | 0.16 EUR |
| 100+ | 0.097 EUR |
| 500+ | 0.067 EUR |
| 1000+ | 0.058 EUR |
| 2500+ | 0.049 EUR |
| 5000+ | 0.04 EUR |