| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| TIP35AG | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LM258DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: -25...85°C Input offset current: 100nA Input offset voltage: 7mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Bandwidth: 1MHz Case: Micro8 Number of channels: dual; 2 |
auf Bestellung 3890 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP11N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MMBT5401M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 60mA Power dissipation: 0.25W Case: SOT723 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBT5401WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT5401M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 60mA Power dissipation: 0.25W Case: SOT723 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT5401WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2903EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Kind of comparator: universal Case: SO8 Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...105°C Input offset current: 5nA Input bias current: 20nA Input offset voltage: 7mV Number of comparators: 2 Operating voltage: 2...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2903DMR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape Kind of comparator: universal Case: Micro8 Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...105°C Input offset current: 5nA Input bias current: 20nA Input offset voltage: 7mV Number of comparators: 2 Operating voltage: 2...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBT5551M3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 60mA Power dissipation: 0.64W Case: SOT723 Current gain: 80...250 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT5551M3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 60mA Power dissipation: 0.64W Case: SOT723 Current gain: 80...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT2222AM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT2222ATT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC846BDW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1875 Stücke: Lieferzeit 14-21 Tag (e) |
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| TIP41BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 6A Case: TO220AB Current gain: 15...75 Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC33725TAR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 160...400 Mounting: THT Kind of package: Ammo Pack Frequency: 210MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCV57302DSADJR4G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD Case: D2PAK-5 Mounting: SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Number of channels: 1 Output voltage: 1.24...13V Output current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM324ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 5mV Type of integrated circuit: operational amplifier Bandwidth: 1.2MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...15V DC; 3...30V DC Case: TSSOP14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 75nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM324DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.2MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...15V DC; 3...30V DC Case: TSSOP14 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM324EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1.2MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...15V DC; 3...30V DC Case: SO14 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 150nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC33063AVDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N3904TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
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2N3904TF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N3904TAR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LM2901VDTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2901DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: -40...105°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2901EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: -40...105°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2901VDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCP260N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 45A Power dissipation: 156W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCPF260N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 45A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV78L15ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCP7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 23nC Pulsed drain current: 21A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCA47N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.21µC Pulsed drain current: 141A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMQ8205A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Power dissipation: 2.5W Case: WDFN12 On-state resistance: 51/147mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCP260N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3 Case: TO220-3 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 24nC On-state resistance: 0.26Ω Drain current: 12A Gate-source voltage: ±30V Pulsed drain current: 30A Power dissipation: 90W Drain-source voltage: 650V Kind of channel: enhancement |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP360N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 18nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVD260N65S3T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Case: DPAK Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 23.5nC On-state resistance: 0.26Ω Drain current: 12A Gate-source voltage: ±30V Pulsed drain current: 30A Power dissipation: 90W Drain-source voltage: 650V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVD360N65S3T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: DPAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 16.8nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC33204DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC Number of channels: quad; 4 Mounting: SMT Integrated circuit features: low voltage; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: TSSOP14 Operating temperature: -40...105°C Input offset current: 100nA Input bias current: 0.25µA Input offset voltage: 13mV Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Slew rate: 1V/μs Bandwidth: 2.2MHz |
auf Bestellung 2324 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2222ATFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LM337BD2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM337BTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: TO220AB Mounting: THT Number of channels: 1 Kind of package: tube |
Produkt ist nicht verfügbar |
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LM337D2TR4G | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
auf Bestellung 657 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBCP53-16T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVBG025N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Kind of package: reel; tape Technology: SiC Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...18V Gate charge: 164nC On-state resistance: 24mΩ Power dissipation: 197W Drain current: 75A Pulsed drain current: 284A Drain-source voltage: 650V Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC848CDW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2268 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP110N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 105A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBT3904TT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
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| NTHL060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 33A Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 74nC On-state resistance: 49mΩ Power dissipation: 88W Pulsed drain current: 143A Technology: SiC |
Produkt ist nicht verfügbar |
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| NVBG060N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: D2PAK-7 Gate-source voltage: -5...18V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 85W Pulsed drain current: 130A Features of semiconductor devices: Kelvin terminal Technology: SiC |
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| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -8...22V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC |
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| NVH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV78L12ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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 |
NCV78L12ABPG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 Application: automotive industry |
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| LMV358DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: SO8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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| LMV358DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: Micro8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBT2907AM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT2907AM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT2907AWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVB110N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 58nC Pulsed drain current: 69A |
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Im Einkaufswagen Stück im Wert von UAH |
| TIP35AG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM258DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -25...85°C
Input offset current: 100nA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Bandwidth: 1MHz
Case: Micro8
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -25...85°C
Input offset current: 100nA
Input offset voltage: 7mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Bandwidth: 1MHz
Case: Micro8
Number of channels: dual; 2
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| 439+ | 0.16 EUR |
| 516+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| FCP11N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 33A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT5401M3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT5401WT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NSVMMBT5401M3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 60mA
Power dissipation: 0.25W
Case: SOT723
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBT5401WT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM2903EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Case: SO8
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Kind of comparator: universal
Case: SO8
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM2903DMR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Kind of comparator: universal
Case: Micro8
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Kind of comparator: universal
Case: Micro8
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 7mV
Number of comparators: 2
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBT5551M3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NSVMMBT5551M3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 60mA
Power dissipation: 0.64W
Case: SOT723
Current gain: 80...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBT2222AM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NSVMMBT2222ATT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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| BC846BDW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1875 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 521+ | 0.14 EUR |
| 635+ | 0.11 EUR |
| 742+ | 0.096 EUR |
| 873+ | 0.082 EUR |
| 1299+ | 0.055 EUR |
| 1563+ | 0.046 EUR |
| 1743+ | 0.041 EUR |
| TIP41BG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Produkt ist nicht verfügbar
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| BC33725TAR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 210MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 210MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV57302DSADJR4G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Case: D2PAK-5
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Number of channels: 1
Output voltage: 1.24...13V
Output current: 3A
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Case: D2PAK-5
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Number of channels: 1
Output voltage: 1.24...13V
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM324ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM324DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM324EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.2MHz; Ch: 4; ±1.5÷15VDC,3÷30VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1.2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...15V DC; 3...30V DC
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 150nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33063AVDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3904TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3904TF |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2N3904TAR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2901VDTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2901DTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2901EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2901VDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP260N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF260N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV78L15ABDR2G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 23nC
Pulsed drain current: 21A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 23nC
Pulsed drain current: 21A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCA47N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.21µC
Pulsed drain current: 141A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.21µC
Pulsed drain current: 141A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMQ8205A |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Power dissipation: 2.5W
Case: WDFN12
On-state resistance: 51/147mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3A
Power dissipation: 2.5W
Case: WDFN12
On-state resistance: 51/147mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP260N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Case: TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Case: TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.46 EUR |
| 31+ | 2.32 EUR |
| FCP360N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD260N65S3T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 23.5nC
On-state resistance: 0.26Ω
Drain current: 12A
Gate-source voltage: ±30V
Pulsed drain current: 30A
Power dissipation: 90W
Drain-source voltage: 650V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD360N65S3T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 16.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 16.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33204DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSSOP14
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
auf Bestellung 2324 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 225+ | 0.32 EUR |
| 246+ | 0.29 EUR |
| 256+ | 0.28 EUR |
| 265+ | 0.27 EUR |
| 277+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| PN2222ATFR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM337BD2TR4G |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM337BTG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM337D2TR4G |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 105+ | 0.69 EUR |
| 121+ | 0.59 EUR |
| 133+ | 0.54 EUR |
| 141+ | 0.51 EUR |
| NSVBCP53-16T3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG025N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 164nC
On-state resistance: 24mΩ
Power dissipation: 197W
Drain current: 75A
Pulsed drain current: 284A
Drain-source voltage: 650V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Kind of package: reel; tape
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...18V
Gate charge: 164nC
On-state resistance: 24mΩ
Power dissipation: 197W
Drain current: 75A
Pulsed drain current: 284A
Drain-source voltage: 650V
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
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| BC848CDW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 455+ | 0.16 EUR |
| 532+ | 0.13 EUR |
| 870+ | 0.082 EUR |
| 977+ | 0.073 EUR |
| 1139+ | 0.063 EUR |
| 1292+ | 0.055 EUR |
| 2000+ | 0.049 EUR |
| FCP110N65F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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| MMBT3904TT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NTHL060N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
Pulsed drain current: 143A
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
Pulsed drain current: 143A
Technology: SiC
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| NVBG060N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
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| NTH4L060N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
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| NVH4L060N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
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| NCV78L12ABDR2G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV78L12ABPG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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| LMV358DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| LMV358DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| MMBT2907AM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| NSVMMBT2907AM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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| NSVMMBT2907AWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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| NVB110N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 69A
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