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BSS138-G BSS138-G ONSEMI bss138-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 1240 Stücke:
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239+0.3 EUR
368+0.19 EUR
582+0.12 EUR
794+0.09 EUR
834+0.086 EUR
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MCH3484-TL-W ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
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BZX84C5V6LT1G BZX84C5V6LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 1µA
auf Bestellung 2266 Stücke:
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581+0.12 EUR
834+0.086 EUR
1021+0.07 EUR
1603+0.045 EUR
1938+0.037 EUR
2266+0.031 EUR
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SZBZX84C5V6ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C5V6LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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NCV7356D1R2G NCV7356D1R2G ONSEMI ncv7356-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Operating temperature: -40...150°C
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NCV7356D2R2G NCV7356D2R2G ONSEMI ncv7356-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO14; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Application: automotive industry
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2SK2394-6-TB-E 2SK2394-6-TB-E ONSEMI 2sk2394-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 1237 Stücke:
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118+0.61 EUR
155+0.46 EUR
253+0.28 EUR
268+0.27 EUR
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SMUN5231DW1T1G SMUN5231DW1T1G ONSEMI dtc123ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Application: automotive industry
Kind of transistor: BRT
auf Bestellung 3000 Stücke:
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556+0.13 EUR
1250+0.057 EUR
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NLV74HC151ADR2G ONSEMI mc74hc151a-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; IN: 8; CMOS; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 1
auf Bestellung 5000 Stücke:
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2500+0.28 EUR
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2N7002KT7G 2N7002KT7G ONSEMI 2n7002k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Version: ESD
auf Bestellung 5375 Stücke:
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334+0.21 EUR
550+0.13 EUR
1134+0.063 EUR
1437+0.05 EUR
1916+0.037 EUR
2025+0.035 EUR
3500+0.034 EUR
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FDS4435BZ FDS4435BZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC7F0EAF8F4259&compId=FDS4435BZ.pdf?ci_sign=4e3b4b27557dd1929c9ebe5eb764fa744f2c0cf7 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2250 Stücke:
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68+1.06 EUR
94+0.77 EUR
181+0.4 EUR
191+0.37 EUR
1000+0.36 EUR
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NCP1565MNTXG ONSEMI ONSM-S-A0001407785-1.pdf?t.download=true&u=5oefqw ncp1565-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Topology: forward
Output current: -2...3A
Frequency: 0.1...1.5MHz
Operating voltage: 6.5...20V DC
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NCP1566MNTXG ONSEMI ncp1566-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Topology: forward
Output current: -2...3A
Frequency: 0.1...1MHz
Operating voltage: 6.5...20V DC
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NCP699SN18T1G NCP699SN18T1G ONSEMI ncp699-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.62V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
auf Bestellung 2880 Stücke:
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139+0.51 EUR
192+0.37 EUR
222+0.32 EUR
338+0.21 EUR
358+0.2 EUR
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FGY160T65SPD-F085
+1
 		FGY160T65SPD-F085 ONSEMI fgy160t65spd-f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
auf Bestellung 30 Stücke:
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4+18.19 EUR
5+15.39 EUR
10+15.24 EUR
30+14.8 EUR
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NCP1399BADR2G NCP1399BADR2G ONSEMI ncp1399-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Case: SO16
Mounting: SMD
Frequency: 20...750kHz
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
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LM393EDR2G ONSEMI lm393-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; SO8; reel,tape; Iio: 5nA; IB: 20nA
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Produkt ist nicht verfügbar
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ES3C ONSEMI ES3J-D.PDF es3a.pdf es3a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
Produkt ist nicht verfügbar
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MM3Z12VT1G MM3Z12VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE594AB13485B302469&compId=MM3Z12VT1G.PDF?ci_sign=237b1d34ea9779fcfdaefadae8076d762172dbd8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 5276 Stücke:
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582+0.12 EUR
863+0.083 EUR
1214+0.059 EUR
1417+0.05 EUR
2041+0.035 EUR
2794+0.026 EUR
2959+0.024 EUR
3068+0.023 EUR
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NCP12400BBBBA0DR2G ONSEMI ncp12400-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
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NCP12400BBHAA1DR2G ONSEMI ncp12400-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 94...110kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
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BZX84C47LT1G BZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C22ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
auf Bestellung 3000 Stücke:
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556+0.13 EUR
582+0.12 EUR
667+0.11 EUR
1083+0.066 EUR
1819+0.039 EUR
1931+0.037 EUR
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SZBZX84C22LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SS35 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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1SS351-TB-E ONSEMI Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
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BZX84C24LT1G BZX84C24LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 description Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 2573 Stücke:
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612+0.12 EUR
981+0.073 EUR
1454+0.049 EUR
1737+0.041 EUR
2552+0.028 EUR
2573+0.027 EUR
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SZBZX84C24LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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GBPC2506 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2506W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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S215FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMDL770T1G MMDL770T1G ONSEMI mmdl770t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1pF
Produkt ist nicht verfügbar
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NTD20P06LT4G NTD20P06LT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89E7BC6C8FF9E27&compId=NTD20P06-DTE.PDF?ci_sign=cd706c4a6fc93bc90b41bca030c4664c37cc4ead Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 873 Stücke:
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72+0.99 EUR
80+0.9 EUR
87+0.82 EUR
97+0.74 EUR
124+0.58 EUR
131+0.55 EUR
500+0.53 EUR
Mindestbestellmenge: 70
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BSS138K BSS138K ONSEMI bss138k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 2.4nC
Drain current: 0.22A
Power dissipation: 0.35W
On-state resistance: 1.6Ω
Gate-source voltage: ±12V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 7009 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
439+0.16 EUR
664+0.11 EUR
784+0.091 EUR
1846+0.039 EUR
1946+0.037 EUR
Mindestbestellmenge: 250
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BSS138 BSS138 ONSEMI bss138-d.pdf BSS138.pdf 5399_BSS138%20SOT-23.PDF 5272_BSS138.pdf BSS138.pdf 493e10da2532f2961f91526e524f7946.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11707 Stücke:
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455+0.16 EUR
758+0.094 EUR
955+0.075 EUR
1273+0.056 EUR
1471+0.049 EUR
1603+0.045 EUR
2605+0.027 EUR
2748+0.026 EUR
Mindestbestellmenge: 455
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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MBR30H100CTG ONSEMI mbr30h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Produkt ist nicht verfügbar
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2SK3557-6-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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2SK3557-7-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBZ6V8ALT1G MMBZ6V8ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Version: ESD
Kind of package: reel; tape
Tolerance: ±5%
auf Bestellung 7751 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
758+0.094 EUR
1719+0.042 EUR
2500+0.029 EUR
2718+0.026 EUR
Mindestbestellmenge: 556
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SZMMBZ6V8ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SZMMBZ6V8ALT3G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Application: automotive industry
Version: ESD
Operating temperature: -55...150°C
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.055 EUR
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MMBZ5V6ALT1G MMBZ5V6ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 5µA
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
auf Bestellung 8537 Stücke:
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334+0.21 EUR
481+0.15 EUR
851+0.084 EUR
1090+0.066 EUR
1961+0.036 EUR
2075+0.034 EUR
3000+0.033 EUR
Mindestbestellmenge: 334
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FDMS004N08C ONSEMI fdms004n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS015N04B ONSEMI FDMS015N04B-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0306AS ONSEMI fdms0306as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PCA9306FMUTCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9 Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
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PCA9306AMUTCG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9 Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
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PCA9306FMUTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9 Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
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MC74AC08DG MC74AC08DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE39886FFB020C7&compId=MC74AC08DG.PDF?ci_sign=ba642d9ca6c182c2786d62e2b707688f9ca5f0ae Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: AND
Family: AC
Number of inputs: 2
auf Bestellung 429 Stücke:
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107+0.67 EUR
147+0.49 EUR
164+0.44 EUR
180+0.4 EUR
190+0.38 EUR
275+0.36 EUR
Mindestbestellmenge: 107
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MC74AC08DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BD5E0D3&compId=MC74AC08-D.pdf?ci_sign=4be03fae9140f89e8f342fadb59f2687e062d988 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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MC74AC08DTR2G MC74AC08DTR2G ONSEMI mc74ac08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Produkt ist nicht verfügbar
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MC74AC32DG MC74AC32DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: OR
Family: AC
Number of inputs: 2
auf Bestellung 311 Stücke:
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53+1.36 EUR
87+0.82 EUR
138+0.52 EUR
164+0.44 EUR
174+0.41 EUR
Mindestbestellmenge: 53
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CAV24C32WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D60245FE0D5&compId=CAV24C32-D.pdf?ci_sign=5e9b1b806f273aefc8625282fc90f554aecf31a9 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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D44VH10G D44VH10G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD024FA6A146469&compId=D44VH10.PDF?ci_sign=3f345a7f3a89ccf06e7e1d33fda1cac89425cfc2 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 78 Stücke:
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50+1.43 EUR
78+0.92 EUR
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FDMC8030 ONSEMI fdmc8030-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB110N65F ONSEMI fcb110n65f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Produkt ist nicht verfügbar
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MJF15030G MJF15030G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9D7960DA92C143&compId=MJF15031G.pdf?ci_sign=9f2aa4dce61dfbdd73dc19c49602bcef62b33744 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 150V
Current gain: 40
Power dissipation: 36W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
54+1.34 EUR
61+1.17 EUR
65+1.1 EUR
100+1.07 EUR
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BSS138-G bss138-d.pdf
BSS138-G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
368+0.19 EUR
582+0.12 EUR
794+0.09 EUR
834+0.086 EUR
Mindestbestellmenge: 239
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MCH3484-TL-W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
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BZX84C5V6LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C5V6LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 1µA
auf Bestellung 2266 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
581+0.12 EUR
834+0.086 EUR
1021+0.07 EUR
1603+0.045 EUR
1938+0.037 EUR
2266+0.031 EUR
Mindestbestellmenge: 581
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SZBZX84C5V6ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C5V6LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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NCV7356D1R2G ncv7356-d.pdf
NCV7356D1R2G
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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NCV7356D2R2G ncv7356-d.pdf
NCV7356D2R2G
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO14; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Mounting: SMD
Case: SO14
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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2SK2394-6-TB-E 2sk2394-d.pdf
2SK2394-6-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 1237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
118+0.61 EUR
155+0.46 EUR
253+0.28 EUR
268+0.27 EUR
Mindestbestellmenge: 97
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SMUN5231DW1T1G dtc123ed-d.pdf
SMUN5231DW1T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Application: automotive industry
Kind of transistor: BRT
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1250+0.057 EUR
1323+0.054 EUR
Mindestbestellmenge: 556
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NLV74HC151ADR2G mc74hc151a-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; IN: 8; CMOS; SMD; SOIC16; HC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
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2N7002KT7G 2n7002k-d.pdf
2N7002KT7G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Version: ESD
auf Bestellung 5375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
550+0.13 EUR
1134+0.063 EUR
1437+0.05 EUR
1916+0.037 EUR
2025+0.035 EUR
3500+0.034 EUR
Mindestbestellmenge: 334
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FDS4435BZ description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC7F0EAF8F4259&compId=FDS4435BZ.pdf?ci_sign=4e3b4b27557dd1929c9ebe5eb764fa744f2c0cf7
FDS4435BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
68+1.06 EUR
94+0.77 EUR
181+0.4 EUR
191+0.37 EUR
1000+0.36 EUR
Mindestbestellmenge: 68
Im Einkaufswagen  Stück im Wert von  UAH
NCP1565MNTXG ONSM-S-A0001407785-1.pdf?t.download=true&u=5oefqw ncp1565-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Topology: forward
Output current: -2...3A
Frequency: 0.1...1.5MHz
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP1566MNTXG ncp1566-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN24; forward; 6.5÷20VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: QFN24
Operating temperature: -40...125°C
Topology: forward
Output current: -2...3A
Frequency: 0.1...1MHz
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP699SN18T1G ncp699-d.pdf
NCP699SN18T1G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.62V
Output voltage: 1.8V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
192+0.37 EUR
222+0.32 EUR
338+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 139
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FGY160T65SPD-F085 fgy160t65spd-f085-d.pdf
FGY160T65SPD-F085
+1
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.19 EUR
5+15.39 EUR
10+15.24 EUR
30+14.8 EUR
Mindestbestellmenge: 4
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NCP1399BADR2G ncp1399-d.pdf
NCP1399BADR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO16; resonant LLC; 9.5÷20VDC
Type of integrated circuit: PMIC
Output current: 0.5...1A
Case: SO16
Mounting: SMD
Frequency: 20...750kHz
Topology: resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...20V DC
Produkt ist nicht verfügbar
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LM393EDR2G lm393-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; SO8; reel,tape; Iio: 5nA; IB: 20nA
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 5nA
Input bias current: 20nA
Input offset voltage: 5mV
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Type of integrated circuit: comparator
Case: SO8
Produkt ist nicht verfügbar
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ES3C ES3J-D.PDF es3a.pdf es3a.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.5mA
Capacitance: 45pF
Produkt ist nicht verfügbar
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MM3Z12VT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE594AB13485B302469&compId=MM3Z12VT1G.PDF?ci_sign=237b1d34ea9779fcfdaefadae8076d762172dbd8
MM3Z12VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 5276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
863+0.083 EUR
1214+0.059 EUR
1417+0.05 EUR
2041+0.035 EUR
2794+0.026 EUR
2959+0.024 EUR
3068+0.023 EUR
Mindestbestellmenge: 582
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NCP12400BBBBA0DR2G ncp12400-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...69kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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NCP12400BBHAA1DR2G ncp12400-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 94...110kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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BZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C47LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C22ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
582+0.12 EUR
667+0.11 EUR
1083+0.066 EUR
1819+0.039 EUR
1931+0.037 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C22LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SS35 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Case: SMC
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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1SS351-TB-E
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Capacitance: 0.9pF
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Case: SC59
Kind of package: reel; tape
Semiconductor structure: double series
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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BZX84C24LT1G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C24LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 2573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
612+0.12 EUR
981+0.073 EUR
1454+0.049 EUR
1737+0.041 EUR
2552+0.028 EUR
2573+0.027 EUR
Mindestbestellmenge: 612
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C24LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC2506 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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GBPC2506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
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S215FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMDL770T1G mmdl770t1-d.pdf
MMDL770T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD20P06LT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89E7BC6C8FF9E27&compId=NTD20P06-DTE.PDF?ci_sign=cd706c4a6fc93bc90b41bca030c4664c37cc4ead
NTD20P06LT4G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
72+0.99 EUR
80+0.9 EUR
87+0.82 EUR
97+0.74 EUR
124+0.58 EUR
131+0.55 EUR
500+0.53 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K bss138k-d.pdf
BSS138K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 2.4nC
Drain current: 0.22A
Power dissipation: 0.35W
On-state resistance: 1.6Ω
Gate-source voltage: ±12V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 7009 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
439+0.16 EUR
664+0.11 EUR
784+0.091 EUR
1846+0.039 EUR
1946+0.037 EUR
Mindestbestellmenge: 250
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BSS138 bss138-d.pdf BSS138.pdf 5399_BSS138%20SOT-23.PDF 5272_BSS138.pdf BSS138.pdf 493e10da2532f2961f91526e524f7946.pdf
BSS138
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Gate charge: 1.7nC
Drain current: 0.22A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Drain-source voltage: 50V
auf Bestellung 11707 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
758+0.094 EUR
955+0.075 EUR
1273+0.056 EUR
1471+0.049 EUR
1603+0.045 EUR
2605+0.027 EUR
2748+0.026 EUR
Mindestbestellmenge: 455
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Case: DFN5x6
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR30H100CTG mbr30h100ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Produkt ist nicht verfügbar
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2SK3557-6-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SK3557-7-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ6V8ALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ6V8ALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Version: ESD
Kind of package: reel; tape
Tolerance: ±5%
auf Bestellung 7751 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
1719+0.042 EUR
2500+0.029 EUR
2718+0.026 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ6V8ALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ6V8ALT3G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46V; 2.5A; 24W; unidirectional,common anode
Type of diode: TVS array
Breakdown voltage: 6.46V
Max. forward impulse current: 2.5A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Leakage current: 0.5µA
Number of channels: 2
Application: automotive industry
Version: ESD
Operating temperature: -55...150°C
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.055 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5V6ALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ5V6ALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Peak pulse power dissipation: 24W
Version: ESD
Leakage current: 5µA
Max. forward impulse current: 3A
Max. off-state voltage: 3V
Breakdown voltage: 5.6V
auf Bestellung 8537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
481+0.15 EUR
851+0.084 EUR
1090+0.066 EUR
1961+0.036 EUR
2075+0.034 EUR
3000+0.033 EUR
Mindestbestellmenge: 334
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FDMS004N08C fdms004n08c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS015N04B FDMS015N04B-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0306AS fdms0306as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCA9306FMUTCG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCA9306AMUTCG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PCA9306FMUTAG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A7203820&compId=PCA9306AMUTCG.pdf?ci_sign=d5a4ff1214b8cdd24932132eb3264e4438c3dfa9
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1...3.6V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of output: open drain
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC08DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE39886FFB020C7&compId=MC74AC08DG.PDF?ci_sign=ba642d9ca6c182c2786d62e2b707688f9ca5f0ae
MC74AC08DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: AND
Family: AC
Number of inputs: 2
auf Bestellung 429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
147+0.49 EUR
164+0.44 EUR
180+0.4 EUR
190+0.38 EUR
275+0.36 EUR
Mindestbestellmenge: 107
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MC74AC08DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BD5E0D3&compId=MC74AC08-D.pdf?ci_sign=4be03fae9140f89e8f342fadb59f2687e062d988
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC08DTR2G mc74ac08-d.pdf
MC74AC08DTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Produkt ist nicht verfügbar
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MC74AC32DG pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A560C7&compId=MC74AC32DG.pdf?ci_sign=2445cd0567e47abdf5adb2e1047c1744f7366b36
MC74AC32DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Technology: CMOS
Kind of gate: OR
Family: AC
Number of inputs: 2
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
87+0.82 EUR
138+0.52 EUR
164+0.44 EUR
174+0.41 EUR
Mindestbestellmenge: 53
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CAV24C32WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D60245FE0D5&compId=CAV24C32-D.pdf?ci_sign=5e9b1b806f273aefc8625282fc90f554aecf31a9
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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D44VH10G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD024FA6A146469&compId=D44VH10.PDF?ci_sign=3f345a7f3a89ccf06e7e1d33fda1cac89425cfc2
D44VH10G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
78+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FDMC8030 fdmc8030-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±12V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCB110N65F fcb110n65f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Produkt ist nicht verfügbar
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MJF15030G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9D7960DA92C143&compId=MJF15031G.pdf?ci_sign=9f2aa4dce61dfbdd73dc19c49602bcef62b33744
MJF15030G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Collector-emitter voltage: 150V
Current gain: 40
Power dissipation: 36W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
54+1.34 EUR
61+1.17 EUR
65+1.1 EUR
100+1.07 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
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