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1N4001G 1N4001G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 117 Stücke:
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117+0.61 EUR
Mindestbestellmenge: 117 Stücke
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KSC945YTA KSC945YTA ONSEMI KSC945.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 401 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
382+0.19 EUR
401+0.17 EUR
Mindestbestellmenge: 239 Stücke
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KSB772YS KSB772YS ONSEMI KSB772.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
119+0.6 EUR
174+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 93 Stücke
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KSE13003H2ASTU ONSEMI KSE13003.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSC1815YTA KSC1815YTA ONSEMI KSC1815.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Type of transistor: NPN
Collector current: 0.15A
Power dissipation: 0.4W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...240
Kind of package: Ammo Pack
Frequency: 80MHz
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
382+0.19 EUR
610+0.12 EUR
835+0.086 EUR
1000+0.075 EUR
2000+0.066 EUR
Mindestbestellmenge: 239 Stücke
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SBC857BWT1G SBC857BWT1G ONSEMI BC85xBWT1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
763+0.094 EUR
Mindestbestellmenge: 625 Stücke
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CNY173M CNY173M ONSEMI CNY173M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
211+0.34 EUR
229+0.31 EUR
244+0.29 EUR
Mindestbestellmenge: 139 Stücke
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CNY173SM CNY173SM ONSEMI CNY173M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Collector-emitter voltage: 70V
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
CTR@If: 100-200%@10mA
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
168+0.43 EUR
185+0.39 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 152 Stücke
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KSD1691GS KSD1691GS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 200...400
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
57+1.26 EUR
66+1.09 EUR
80+0.9 EUR
106+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 46 Stücke
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KSD1691GSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 200...400
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1691YS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 160...320
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1691YSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 160...320
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616AGBU ONSEMI KSD1616A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 6514 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
174+0.41 EUR
204+0.35 EUR
360+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 136 Stücke
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 43016 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
428+0.17 EUR
618+0.12 EUR
711+0.1 EUR
755+0.095 EUR
Mindestbestellmenge: 295 Stücke
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NLSV1T34DFT2G NLSV1T34DFT2G ONSEMI NLSV1T34DFT2G.PDF Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
126+0.57 EUR
500+0.53 EUR
Mindestbestellmenge: 76 Stücke
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1N4004G 1N4004G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
554+0.13 EUR
Mindestbestellmenge: 500 Stücke
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6N136VM ONSEMI HCPL2530M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Manufacturer series: 6N136
Collector current: 8mA
Number of pins: 8
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.99 EUR
200+2.59 EUR
Mindestbestellmenge: 36 Stücke
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6N137SM 6N137SM ONSEMI 4N35SM.pdf 6N137SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
108+0.67 EUR
114+0.63 EUR
123+0.58 EUR
250+0.52 EUR
750+0.49 EUR
Mindestbestellmenge: 97 Stücke
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6N136SM ONSEMI DD93217-6N135_136-ICPL4502_4503-240717.pdf HCPL2530M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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FXMA2104UMX FXMA2104UMX ONSEMI FXMA2104UMX.pdf Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: MLP12
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
auf Bestellung 3621 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99 Stücke
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1N4005G 1N4005G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Quantity in set/package: 1000pcs.
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: bulk
auf Bestellung 2288 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
610+0.12 EUR
676+0.11 EUR
1085+0.066 EUR
1409+0.051 EUR
1578+0.045 EUR
2000+0.042 EUR
Mindestbestellmenge: 556 Stücke
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UF4007 UF4007 ONSEMI UF4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Produkt ist nicht verfügbar
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FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 360 Stücke
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FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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FGA40N65SMD ONSEMI fga40n65smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 ONSEMI fgh60t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 450 Stücke
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FGH60T65SQD-F155 ONSEMI fgh60t65sqd-f155-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH40T65SHD-F155 ONSEMI fgh40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Produkt ist nicht verfügbar
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FGH40T65SHDF-F155 ONSEMI fgh40t65shdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Produkt ist nicht verfügbar
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FGH40T65SQD-F155 ONSEMI fgh40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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TL431ACLPG TL431ACLPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACLPRAG TL431ACLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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SS36 SS36 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 1345 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
130+0.55 EUR
150+0.48 EUR
202+0.35 EUR
Mindestbestellmenge: 105 Stücke
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TL431BCLPRAG TL431BCLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431BILPRAG TL431BILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431CDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431CLPRPG TL431CLPRPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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MPSA42 MPSA42 ONSEMI MMBTA42.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
321+0.22 EUR
550+0.13 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 200 Stücke
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1N4733A 1N4733A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 4207 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
463+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1049+0.068 EUR
1142+0.063 EUR
1244+0.057 EUR
3000+0.05 EUR
Mindestbestellmenge: 334 Stücke
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1N4749A 1N4749A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
625+0.11 EUR
725+0.099 EUR
1038+0.069 EUR
1194+0.06 EUR
1409+0.051 EUR
1578+0.045 EUR
Mindestbestellmenge: 500 Stücke
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BAS16WT1G BAS16WT1G ONSEMI BAS16WT1G.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
981+0.073 EUR
1774+0.04 EUR
2419+0.03 EUR
Mindestbestellmenge: 625 Stücke
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BAS16XV2T1G BAS16XV2T1G ONSEMI BAS16XV2.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS16XV2T5G BAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT54LT1G BAT54LT1G ONSEMI BAT54L.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Capacitance: 7.6pF
Max. load current: 0.3A
auf Bestellung 5194 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
893+0.08 EUR
1276+0.056 EUR
1484+0.048 EUR
1812+0.039 EUR
2137+0.033 EUR
2605+0.027 EUR
3449+0.021 EUR
Mindestbestellmenge: 625 Stücke
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FXL5T244BQX FXL5T244BQX ONSEMI FXL5T244BQX.pdf Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
68+1.06 EUR
71+1 EUR
Mindestbestellmenge: 68 Stücke
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MC14073BDG MC14073BDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: tube
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.83 EUR
Mindestbestellmenge: 39 Stücke
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BC848BWT1G BC848BWT1G ONSEMI BC846AWT1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 37770 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+0.1 EUR
834+0.086 EUR
1539+0.046 EUR
2393+0.03 EUR
2733+0.026 EUR
3247+0.022 EUR
6000+0.02 EUR
9000+0.019 EUR
Mindestbestellmenge: 556 Stücke
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MC74ACT245DWR2G MC74ACT245DWR2G ONSEMI mc74ac245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
91+0.79 EUR
99+0.73 EUR
Mindestbestellmenge: 69 Stücke
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SMMBT2907ALT1G SMMBT2907ALT1G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBT2907ALT3G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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SMMBT3906LT1G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
auf Bestellung 1356 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
625+0.11 EUR
910+0.079 EUR
1069+0.067 EUR
1356+0.053 EUR
Mindestbestellmenge: 455 Stücke
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SMMBT3906LT3G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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SMMBT3906WT1G ONSEMI mmbt3904wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBT4403LT1G ONSEMI mmbt4403lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBT5401LT1G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GBPC3510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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SMMBFJ310LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBFJ310LT3G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N4001G 1N4001-D.PDF
1N4001G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
117+0.61 EUR
Mindestbestellmenge: 117 Stücke
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KSC945YTA KSC945.PDF
KSC945YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.25W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.25W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 401 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
382+0.19 EUR
401+0.17 EUR
Mindestbestellmenge: 239 Stücke
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KSB772YS KSB772.pdf
KSB772YS
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
auf Bestellung 1396 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
93+0.77 EUR
119+0.6 EUR
174+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 93 Stücke
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KSE13003H2ASTU KSE13003.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSC1815YTA KSC1815.pdf
KSC1815YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Type of transistor: NPN
Collector current: 0.15A
Power dissipation: 0.4W
Polarisation: bipolar
Collector-emitter voltage: 50V
Current gain: 120...240
Kind of package: Ammo Pack
Frequency: 80MHz
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
382+0.19 EUR
610+0.12 EUR
835+0.086 EUR
1000+0.075 EUR
2000+0.066 EUR
Mindestbestellmenge: 239 Stücke
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SBC857BWT1G BC85xBWT1.pdf
SBC857BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 763 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
625+0.11 EUR
763+0.094 EUR
Mindestbestellmenge: 625 Stücke
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CNY173M CNY173M.pdf
CNY173M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
139+0.51 EUR
211+0.34 EUR
229+0.31 EUR
244+0.29 EUR
Mindestbestellmenge: 139 Stücke
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CNY173SM CNY173M.pdf
CNY173SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Collector-emitter voltage: 70V
Case: Gull wing 6
Mounting: SMD
Turn-on time: 2µs
Turn-off time: 3µs
CTR@If: 100-200%@10mA
Insulation voltage: 4.17kV
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
152+0.47 EUR
168+0.43 EUR
185+0.39 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 152 Stücke
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KSD1691GS KSD1691.pdf
KSD1691GS
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 200...400
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
46+1.59 EUR
57+1.26 EUR
66+1.09 EUR
80+0.9 EUR
106+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 46 Stücke
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KSD1691GSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 200...400
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1691YS KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 160...320
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1691YSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Case: TO126ISO
Mounting: THT
Type of transistor: NPN
Power dissipation: 20W
Collector current: 5A
Pulsed collector current: 8A
Collector-emitter voltage: 60V
Current gain: 160...320
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616A.pdf
KSD1616AGBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Type of transistor: NPN
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 6514 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
136+0.53 EUR
174+0.41 EUR
204+0.35 EUR
360+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 136 Stücke
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2N7002 2N7000_2N7002_NDS7002A.PDF
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 43016 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
295+0.24 EUR
428+0.17 EUR
618+0.12 EUR
711+0.1 EUR
755+0.095 EUR
Mindestbestellmenge: 295 Stücke
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NLSV1T34DFT2G NLSV1T34DFT2G.PDF
NLSV1T34DFT2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
126+0.57 EUR
500+0.53 EUR
Mindestbestellmenge: 76 Stücke
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1N4004G 1N4001-D.PDF
1N4004G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
500+0.14 EUR
554+0.13 EUR
Mindestbestellmenge: 500 Stücke
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6N136VM HCPL2530M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 250ns
Turn-off time: 260ns
Max. off-state voltage: 5V
Manufacturer series: 6N136
Collector current: 8mA
Number of pins: 8
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+2.99 EUR
200+2.59 EUR
Mindestbestellmenge: 36 Stücke
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6N137SM 4N35SM.pdf 6N137SM.pdf
6N137SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
97+0.74 EUR
108+0.67 EUR
114+0.63 EUR
123+0.58 EUR
250+0.52 EUR
750+0.49 EUR
Mindestbestellmenge: 97 Stücke
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6N136SM DD93217-6N135_136-ICPL4502_4503-240717.pdf HCPL2530M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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FXMA2104UMX FXMA2104UMX.pdf
FXMA2104UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Case: MLP12
Kind of output: open drain
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
auf Bestellung 3621 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99 Stücke
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1N4005G 1N4001-D.PDF
1N4005G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Quantity in set/package: 1000pcs.
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Kind of package: bulk
auf Bestellung 2288 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
556+0.13 EUR
610+0.12 EUR
676+0.11 EUR
1085+0.066 EUR
1409+0.051 EUR
1578+0.045 EUR
2000+0.042 EUR
Mindestbestellmenge: 556 Stücke
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UF4007 UF4001.pdf
UF4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Produkt ist nicht verfügbar
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FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
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FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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FGA40N65SMD fga40n65smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 fgh60t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 fgh40t65shdf-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 fgh40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPG tl431-d.pdf
TL431ACLPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACLPRAG tl431-d.pdf
TL431ACLPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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SS36 SS32_SS39.pdf
SS36
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 1345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
105+0.69 EUR
130+0.55 EUR
150+0.48 EUR
202+0.35 EUR
Mindestbestellmenge: 105 Stücke
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TL431BCLPRAG tl431-d.pdf
TL431BCLPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431BILPRAG tl431-d.pdf
TL431BILPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431CDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRPG tl431-d.pdf
TL431CLPRPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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MPSA42 MMBTA42.pdf
MPSA42
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
200+0.36 EUR
321+0.22 EUR
550+0.13 EUR
650+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 200 Stücke
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1N4733A 1N47xxA.PDF
1N4733A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 4207 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
463+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1049+0.068 EUR
1142+0.063 EUR
1244+0.057 EUR
3000+0.05 EUR
Mindestbestellmenge: 334 Stücke
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1N4749A 1N47xxA.PDF
1N4749A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 1933 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
500+0.14 EUR
625+0.11 EUR
725+0.099 EUR
1038+0.069 EUR
1194+0.06 EUR
1409+0.051 EUR
1578+0.045 EUR
Mindestbestellmenge: 500 Stücke
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BAS16WT1G BAS16WT1G.pdf
BAS16WT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ufmax: 1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 2419 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
625+0.11 EUR
981+0.073 EUR
1774+0.04 EUR
2419+0.03 EUR
Mindestbestellmenge: 625 Stücke
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BAS16XV2T1G BAS16XV2.PDF
BAS16XV2T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS16XV2T5G bas16xv2t1-d.pdf
BAS16XV2T5G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAT54LT1G BAT54L.pdf
BAT54LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Capacitance: 7.6pF
Max. load current: 0.3A
auf Bestellung 5194 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
625+0.11 EUR
893+0.08 EUR
1276+0.056 EUR
1484+0.048 EUR
1812+0.039 EUR
2137+0.033 EUR
2605+0.027 EUR
3449+0.021 EUR
Mindestbestellmenge: 625 Stücke
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FXL5T244BQX FXL5T244BQX.pdf
FXL5T244BQX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
68+1.06 EUR
71+1 EUR
Mindestbestellmenge: 68 Stücke
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MC14073BDG MC14001B-D.pdf
MC14073BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: tube
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
39+1.83 EUR
Mindestbestellmenge: 39 Stücke
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BC848BWT1G BC846AWT1-D.PDF
BC848BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 37770 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
556+0.13 EUR
715+0.1 EUR
834+0.086 EUR
1539+0.046 EUR
2393+0.03 EUR
2733+0.026 EUR
3247+0.022 EUR
6000+0.02 EUR
9000+0.019 EUR
Mindestbestellmenge: 556 Stücke
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MC74ACT245DWR2G mc74ac245-d.pdf
MC74ACT245DWR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
auf Bestellung 648 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
69+1.04 EUR
91+0.79 EUR
99+0.73 EUR
Mindestbestellmenge: 69 Stücke
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SMMBT2907ALT1G mmbt2907alt1-d.pdf
SMMBT2907ALT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT2907ALT3G mmbt2907alt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SMMBT3906LT1G mmbt3906lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
auf Bestellung 1356 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
455+0.16 EUR
625+0.11 EUR
910+0.079 EUR
1069+0.067 EUR
1356+0.053 EUR
Mindestbestellmenge: 455 Stücke
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SMMBT3906LT3G mmbt3906lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SMMBT3906WT1G mmbt3904wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT4403LT1G mmbt4403lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT5401LT1G mmbt5401lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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GBPC3510 GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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SMMBFJ310LT1G mmbfj309lt1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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SMMBFJ310LT3G mmbfj309lt1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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