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MM74HC125MX MM74HC125MX ONSEMI MM74HC125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: HC
Case: SO14
Produkt ist nicht verfügbar
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BC550CTA BC550CTA ONSEMI BC546-BC550.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 3371 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
538+0.13 EUR
727+0.098 EUR
812+0.088 EUR
1040+0.069 EUR
1217+0.059 EUR
2000+0.05 EUR
Mindestbestellmenge: 358
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CAT24C512HU5IGT3 ONSEMI CAT24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C512WI-GT3 CAT24C512WI-GT3 ONSEMI CAT24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Interface: I2C
Memory: 512kb EEPROM
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
139+0.52 EUR
146+0.49 EUR
154+0.47 EUR
158+0.45 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 125
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CAT24C512XI-T2 ONSEMI CAT24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C512YI-GT3 ONSEMI CAT24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LM317MBSTT3G LM317MBSTT3G ONSEMI LM317M_NCV317M.PDF Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Output voltage: 1.2...37V
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; linear
Kind of package: reel; tape
Case: SOT223
Manufacturer series: LM317M
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
241+0.3 EUR
261+0.27 EUR
296+0.24 EUR
321+0.22 EUR
Mindestbestellmenge: 173
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LM317MSTT3G LM317MSTT3G ONSEMI LM317M_NCV317M.PDF Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Manufacturer series: LM317M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Produkt ist nicht verfügbar
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BC640TA BC640TA ONSEMI BC640TA.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 5623 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
200+0.36 EUR
290+0.25 EUR
345+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 148
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MMBT3904LT1G MMBT3904LT1G ONSEMI MMBT3904L.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 8529 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1250+0.057 EUR
1544+0.046 EUR
1737+0.041 EUR
2488+0.029 EUR
2924+0.024 EUR
3598+0.02 EUR
6000+0.017 EUR
Mindestbestellmenge: 1000
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MMBT3904LT3G MMBT3904LT3G ONSEMI mmbt3904lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT3904WT1G MMBT3904WT1G ONSEMI mmbt3904wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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SMMBT3904LT1G SMMBT3904LT1G ONSEMI MMBT3904L.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
auf Bestellung 1546 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
491+0.15 EUR
610+0.12 EUR
940+0.076 EUR
1229+0.058 EUR
Mindestbestellmenge: 385
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BD243CG BD243CG ONSEMI BD244CG.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
65+1.11 EUR
79+0.91 EUR
105+0.68 EUR
Mindestbestellmenge: 44
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HCPL2630M HCPL2630M ONSEMI HCPL2611M.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
Turn-on time: 30ns
Turn-off time: 30ns
Max. off-state voltage: 5V
Slew rate: 10kV/μs
auf Bestellung 884 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.26 EUR
43+1.69 EUR
47+1.53 EUR
50+1.52 EUR
Mindestbestellmenge: 32
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1N4744ATR 1N4744ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 2325 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
725+0.099 EUR
1266+0.056 EUR
1583+0.045 EUR
Mindestbestellmenge: 455
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LM2576T-ADJG LM2576T-ADJG ONSEMI LM2576-ON-DTE.PDF description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.3÷37VDC; 3A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.3...37V DC
Output current: 3A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...125°C
Kind of package: tube
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
38+1.92 EUR
47+1.54 EUR
Mindestbestellmenge: 31
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BCP56-10T1G BCP56-10T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
168+0.43 EUR
268+0.27 EUR
307+0.23 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 109
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MMBFJ310LT1G
+1
 		MMBFJ310LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
241+0.3 EUR
278+0.26 EUR
332+0.22 EUR
376+0.19 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 193
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MBR20200CTG MBR20200CTG ONSEMI MBR20200CTG.PDF description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
39+1.87 EUR
45+1.62 EUR
59+1.22 EUR
76+0.94 EUR
Mindestbestellmenge: 33
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MC14015BDG MC14015BDG ONSEMI MC14015B-D.pdf Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 4bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 2
Family: HEF4000B
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
115+0.61 EUR
Mindestbestellmenge: 115
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TL431AILPG TL431AILPG ONSEMI TL431_ser.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
auf Bestellung 892 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
205+0.35 EUR
226+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 152
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TL431CLPG TL431CLPG ONSEMI TL431_ser.pdf description Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
220+0.33 EUR
262+0.27 EUR
300+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 173
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BAT54CLT1G BAT54CLT1G ONSEMI BAT54CLT1G-ON-Semiconductor.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 0.3A
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1042+0.069 EUR
1495+0.047 EUR
Mindestbestellmenge: 715
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FOD817C3SD FOD817C3SD ONSEMI FOD817ASD.pdf FOD817C3SD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
208+0.34 EUR
262+0.27 EUR
290+0.25 EUR
500+0.21 EUR
Mindestbestellmenge: 148
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FQB8N60CTM FQB8N60CTM ONSEMI fqi8n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14093BDG MC14093BDG ONSEMI MC14093BDG.PDF description Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NAND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
215+0.33 EUR
236+0.3 EUR
256+0.28 EUR
274+0.26 EUR
302+0.24 EUR
550+0.22 EUR
Mindestbestellmenge: 152
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MC14093BDR2G MC14093BDR2G ONSEMI MC14093BDG.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Mounting: SMD
Kind of input: with Schmitt trigger
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NAND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
241+0.3 EUR
265+0.27 EUR
285+0.25 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
2500+0.15 EUR
Mindestbestellmenge: 186
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74ACT245SCX 74ACT245SCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Operating temperature: -40...85°C
Case: SO20
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
81+0.89 EUR
90+0.8 EUR
95+0.76 EUR
100+0.74 EUR
Mindestbestellmenge: 59
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74ACT245MTCX 74ACT245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 1171 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
112+0.64 EUR
124+0.58 EUR
132+0.54 EUR
141+0.51 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 81
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74ACT245SC 74ACT245SC ONSEMI 74ACT245SC.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: SO20-W
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
Mindestbestellmenge: 20
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NRVTSS3100ET3G ONSEMI nrvtss3100e-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Max. load current: 6A
Application: automotive industry
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MOC3061M MOC3061M ONSEMI MOC3061M.pdf MOC3061M.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: zero voltage crossing driver
Trigger current: 15mA
Max. off-state voltage: 3V
Output voltage: 600V
Insulation voltage: 5.3kV
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13+5.51 EUR
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MOC3061SM MOC3061SM ONSEMI MOC3061SM.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Case: Gull wing 6
Type of optocoupler: optotriac
Mounting: SMD
Kind of output: zero voltage crossing driver
Trigger current: 15mA
Number of channels: 1
Output voltage: 600V
Slew rate: 1.5kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3061M
auf Bestellung 87 Stücke:
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67+1.07 EUR
80+0.9 EUR
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BAV103 BAV103 ONSEMI BAV103.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Capacitance: 5pF
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218+0.33 EUR
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MC74AC74DG MC74AC74DG ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
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MC74AC74DR2G MC74AC74DR2G ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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MC74AC74DTR2G MC74AC74DTR2G ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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BAV99LT1G BAV99LT1G ONSEMI BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
auf Bestellung 101277 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1042+0.069 EUR
1382+0.052 EUR
2050+0.035 EUR
2416+0.03 EUR
2841+0.025 EUR
3522+0.02 EUR
6000+0.018 EUR
15000+0.016 EUR
Mindestbestellmenge: 1000
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SBAV99LT1G SBAV99LT1G ONSEMI bav99lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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2+35.75 EUR
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FCD7N60TM ONSEMI fcd7n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCA47N60 FCA47N60 ONSEMI fca47n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
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5+14.97 EUR
10+12.84 EUR
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FCA47N60-F109 FCA47N60-F109 ONSEMI FCA47N60.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Produkt ist nicht verfügbar
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FCH47N60-F133 FCH47N60-F133 ONSEMI FCH47N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
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BC546ABU BC546ABU ONSEMI BC546-550-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 2824 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
394+0.18 EUR
573+0.12 EUR
673+0.11 EUR
790+0.091 EUR
971+0.074 EUR
1092+0.065 EUR
Mindestbestellmenge: 264
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BC546BTA BC546BTA ONSEMI BC546-BC550.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 1995 Stücke:
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313+0.23 EUR
455+0.16 EUR
646+0.11 EUR
751+0.095 EUR
1031+0.069 EUR
1163+0.061 EUR
Mindestbestellmenge: 313
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BC546BTF BC546BTF ONSEMI BC546-50.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 5474 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
455+0.16 EUR
646+0.11 EUR
757+0.095 EUR
1055+0.068 EUR
1194+0.06 EUR
2000+0.054 EUR
4000+0.05 EUR
Mindestbestellmenge: 334
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BC546CTA BC546CTA ONSEMI BC546-50.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
Mindestbestellmenge: 455
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MMBFJ177LT1G MMBFJ177LT1G ONSEMI MMBFJ177LT1G.PDF Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
auf Bestellung 12158 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
239+0.3 EUR
269+0.27 EUR
360+0.2 EUR
410+0.17 EUR
481+0.15 EUR
544+0.13 EUR
Mindestbestellmenge: 193
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1N5818G 1N5818G ONSEMI 1n5817-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Produkt ist nicht verfügbar
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FDS9926A FDS9926A ONSEMI FDS9926A.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
125+0.57 EUR
141+0.51 EUR
184+0.39 EUR
204+0.35 EUR
250+0.31 EUR
Mindestbestellmenge: 88
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FDD8N50NZTM FDD8N50NZTM ONSEMI fdd8n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N5401YTA 2N5401YTA ONSEMI 2N5401_Rev2.1_May2016.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
auf Bestellung 19200 Stücke:
Lieferzeit 14-21 Tag (e)
820+0.088 EUR
920+0.079 EUR
1040+0.07 EUR
2000+0.063 EUR
10000+0.062 EUR
Mindestbestellmenge: 820
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BC32725TA BC32725TA ONSEMI BC327.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
459+0.16 EUR
637+0.11 EUR
735+0.097 EUR
1000+0.072 EUR
1132+0.063 EUR
2000+0.056 EUR
Mindestbestellmenge: 313
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1N4002G 1N4002G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1269 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
667+0.11 EUR
898+0.08 EUR
1132+0.063 EUR
1266+0.056 EUR
Mindestbestellmenge: 385
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1N4002RLG 1N4002RLG ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
auf Bestellung 4927 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
481+0.15 EUR
693+0.1 EUR
810+0.088 EUR
985+0.073 EUR
1127+0.063 EUR
1279+0.056 EUR
Mindestbestellmenge: 358
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RS1M RS1M ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 962 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
353+0.2 EUR
477+0.15 EUR
544+0.13 EUR
658+0.11 EUR
747+0.096 EUR
Mindestbestellmenge: 250
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NRVHPRS1MFA NRVHPRS1MFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FQI4N90TU ONSEMI fqi4n90-d.pdf FQI4N90-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16.8A
Power dissipation: 140W
Gate charge: 30nC
Produkt ist nicht verfügbar
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MOC3023SM MOC3023SM ONSEMI MOC3023SM-DTE.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
141+0.51 EUR
154+0.47 EUR
166+0.43 EUR
178+0.4 EUR
500+0.33 EUR
Mindestbestellmenge: 95
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MM74HC125MX MM74HC125.pdf
MM74HC125MX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: HC
Case: SO14
Produkt ist nicht verfügbar
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BC550CTA BC546-BC550.pdf
BC550CTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 3371 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
538+0.13 EUR
727+0.098 EUR
812+0.088 EUR
1040+0.069 EUR
1217+0.059 EUR
2000+0.05 EUR
Mindestbestellmenge: 358
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CAT24C512HU5IGT3 CAT24C512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C512WI-GT3 CAT24C512-D.pdf
CAT24C512WI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Interface: I2C
Memory: 512kb EEPROM
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Access time: 400ns
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Memory organisation: 64kx8bit
Kind of package: reel; tape
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
139+0.52 EUR
146+0.49 EUR
154+0.47 EUR
158+0.45 EUR
500+0.39 EUR
1000+0.38 EUR
Mindestbestellmenge: 125
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CAT24C512XI-T2 CAT24C512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C512YI-GT3 CAT24C512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LM317MBSTT3G LM317M_NCV317M.PDF
LM317MBSTT3G
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Output voltage: 1.2...37V
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; linear
Kind of package: reel; tape
Case: SOT223
Manufacturer series: LM317M
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
241+0.3 EUR
261+0.27 EUR
296+0.24 EUR
321+0.22 EUR
Mindestbestellmenge: 173
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LM317MSTT3G LM317M_NCV317M.PDF
LM317MSTT3G
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Manufacturer series: LM317M
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Produkt ist nicht verfügbar
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BC640TA BC640TA.pdf
BC640TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
auf Bestellung 5623 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
200+0.36 EUR
290+0.25 EUR
345+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 148
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MMBT3904LT1G MMBT3904L.PDF
MMBT3904LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 8529 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1250+0.057 EUR
1544+0.046 EUR
1737+0.041 EUR
2488+0.029 EUR
2924+0.024 EUR
3598+0.02 EUR
6000+0.017 EUR
Mindestbestellmenge: 1000
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MMBT3904LT3G mmbt3904lt1-d.pdf
MMBT3904LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT3904WT1G mmbt3904wt1-d.pdf
MMBT3904WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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SMMBT3904LT1G MMBT3904L.PDF
SMMBT3904LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
auf Bestellung 1546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
491+0.15 EUR
610+0.12 EUR
940+0.076 EUR
1229+0.058 EUR
Mindestbestellmenge: 385
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BD243CG BD244CG.PDF
BD243CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 20
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
65+1.11 EUR
79+0.91 EUR
105+0.68 EUR
Mindestbestellmenge: 44
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HCPL2630M HCPL2611M.pdf
HCPL2630M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Output voltage: -500mV...7V
Manufacturer series: HCPL2630M
Turn-on time: 30ns
Turn-off time: 30ns
Max. off-state voltage: 5V
Slew rate: 10kV/μs
auf Bestellung 884 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.26 EUR
43+1.69 EUR
47+1.53 EUR
50+1.52 EUR
Mindestbestellmenge: 32
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1N4744ATR 1N47xxA.PDF
1N4744ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 15V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 2325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
725+0.099 EUR
1266+0.056 EUR
1583+0.045 EUR
Mindestbestellmenge: 455
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LM2576T-ADJG description LM2576-ON-DTE.PDF
LM2576T-ADJG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.3÷37VDC; 3A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.3...37V DC
Output current: 3A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: 0...125°C
Kind of package: tube
auf Bestellung 732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
38+1.92 EUR
47+1.54 EUR
Mindestbestellmenge: 31
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BCP56-10T1G BCP56_ser.pdf
BCP56-10T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 1661 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
168+0.43 EUR
268+0.27 EUR
307+0.23 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 109
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MMBFJ310LT1G mmbfj309lt1-d.pdf
MMBFJ310LT1G
+1
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 24mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 24mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 567 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
241+0.3 EUR
278+0.26 EUR
332+0.22 EUR
376+0.19 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 193
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MBR20200CTG description MBR20200CTG.PDF
MBR20200CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 10Ax2; TO220-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.9V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
39+1.87 EUR
45+1.62 EUR
59+1.22 EUR
76+0.94 EUR
Mindestbestellmenge: 33
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MC14015BDG MC14015B-D.pdf
MC14015BDG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 4bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 2
Family: HEF4000B
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
115+0.61 EUR
Mindestbestellmenge: 115
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TL431AILPG TL431_ser.pdf
TL431AILPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
auf Bestellung 892 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
205+0.35 EUR
226+0.32 EUR
240+0.3 EUR
Mindestbestellmenge: 152
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TL431CLPG description TL431_ser.pdf
TL431CLPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; TO92; bulk; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: bulk
Maximum output current: 0.1A
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
220+0.33 EUR
262+0.27 EUR
300+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 173
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BAT54CLT1G BAT54CLT1G-ON-Semiconductor.pdf
BAT54CLT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 0.3A
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1495+0.047 EUR
Mindestbestellmenge: 715
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FOD817C3SD FOD817ASD.pdf FOD817C3SD.pdf
FOD817C3SD
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 1295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
208+0.34 EUR
262+0.27 EUR
290+0.25 EUR
500+0.21 EUR
Mindestbestellmenge: 148
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FQB8N60CTM fqi8n60c-d.pdf
FQB8N60CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14093BDG description MC14093BDG.PDF
MC14093BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Kind of input: with Schmitt trigger
Quiescent current: 30µA
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NAND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
215+0.33 EUR
236+0.3 EUR
256+0.28 EUR
274+0.26 EUR
302+0.24 EUR
550+0.22 EUR
Mindestbestellmenge: 152
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MC14093BDR2G MC14093BDG.PDF
MC14093BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; reel,tape
Mounting: SMD
Kind of input: with Schmitt trigger
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: NAND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
241+0.3 EUR
265+0.27 EUR
285+0.25 EUR
305+0.23 EUR
338+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
2500+0.15 EUR
Mindestbestellmenge: 186
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74ACT245SCX 74ACT245-D.pdf
74ACT245SCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Operating temperature: -40...85°C
Case: SO20
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
81+0.89 EUR
90+0.8 EUR
95+0.76 EUR
100+0.74 EUR
Mindestbestellmenge: 59
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74ACT245MTCX 74ACT245-D.pdf
74ACT245MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: TSSOP20
Mounting: SMD
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 1171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
112+0.64 EUR
124+0.58 EUR
132+0.54 EUR
141+0.51 EUR
250+0.48 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 81
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74ACT245SC 74ACT245SC.pdf
74ACT245SC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Case: SO20-W
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Number of channels: 8
Kind of integrated circuit: bidirectional; transceiver
Kind of output: 3-state
Manufacturer series: ACT
Technology: CMOS; TTL
Type of integrated circuit: digital
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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NRVTSS3100ET3G nrvtss3100e-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMB; Ufmax: 0.995V; Ifsm: 90A
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.995V
Max. forward impulse current: 90A
Kind of package: reel; tape
Max. load current: 6A
Application: automotive industry
Produkt ist nicht verfügbar
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MOC3061M MOC3061M.pdf MOC3061M.pdf
MOC3061M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Type of optocoupler: optotriac
Mounting: THT
Kind of output: zero voltage crossing driver
Trigger current: 15mA
Max. off-state voltage: 3V
Output voltage: 600V
Insulation voltage: 5.3kV
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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MOC3061SM MOC3061SM.pdf
MOC3061SM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; Ch: 1
Case: Gull wing 6
Type of optocoupler: optotriac
Mounting: SMD
Kind of output: zero voltage crossing driver
Trigger current: 15mA
Number of channels: 1
Output voltage: 600V
Slew rate: 1.5kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3061M
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
67+1.07 EUR
80+0.9 EUR
Mindestbestellmenge: 44
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BAV103 BAV103.pdf
BAV103
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Capacitance: 5pF
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
Mindestbestellmenge: 218
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MC74AC74DG mc74ac74-d.pdf
MC74AC74DG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
118+0.6 EUR
Mindestbestellmenge: 118
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MC74AC74DR2G mc74ac74-d.pdf
MC74AC74DR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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MC74AC74DTR2G mc74ac74-d.pdf
MC74AC74DTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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BAV99LT1G BAV99.pdf
BAV99LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1V
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
auf Bestellung 101277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1042+0.069 EUR
1382+0.052 EUR
2050+0.035 EUR
2416+0.03 EUR
2841+0.025 EUR
3522+0.02 EUR
6000+0.018 EUR
15000+0.016 EUR
Mindestbestellmenge: 1000
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SBAV99LT1G bav99lt1-d.pdf
SBAV99LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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FCD7N60TM fcd7n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCA47N60 fca47n60_f109-d.pdf
FCA47N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.97 EUR
10+12.84 EUR
Mindestbestellmenge: 5
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FCA47N60-F109 FCA47N60.PDF
FCA47N60-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Produkt ist nicht verfügbar
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FCH47N60-F133 FCH47N60.pdf
FCH47N60-F133
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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BC546ABU BC546-550-DTE.pdf
BC546ABU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92
Current gain: 110...450
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 2824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
394+0.18 EUR
573+0.12 EUR
673+0.11 EUR
790+0.091 EUR
971+0.074 EUR
1092+0.065 EUR
Mindestbestellmenge: 264
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BC546BTA BC546-BC550.pdf
BC546BTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
455+0.16 EUR
646+0.11 EUR
751+0.095 EUR
1031+0.069 EUR
1163+0.061 EUR
Mindestbestellmenge: 313
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BC546BTF BC546-50.pdf
BC546BTF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 5474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
646+0.11 EUR
757+0.095 EUR
1055+0.068 EUR
1194+0.06 EUR
2000+0.054 EUR
4000+0.05 EUR
Mindestbestellmenge: 334
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BC546CTA BC546-50.pdf
BC546CTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 110...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
Mindestbestellmenge: 455
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MMBFJ177LT1G MMBFJ177LT1G.PDF
MMBFJ177LT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
auf Bestellung 12158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
239+0.3 EUR
269+0.27 EUR
360+0.2 EUR
410+0.17 EUR
481+0.15 EUR
544+0.13 EUR
Mindestbestellmenge: 193
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1N5818G 1n5817-d.pdf
1N5818G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; CASE59; Ufmax: 0.875V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: CASE59
Max. forward voltage: 0.875V
Max. forward impulse current: 25A
Produkt ist nicht verfügbar
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FDS9926A FDS9926A.pdf
FDS9926A
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
125+0.57 EUR
141+0.51 EUR
184+0.39 EUR
204+0.35 EUR
250+0.31 EUR
Mindestbestellmenge: 88
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FDD8N50NZTM fdd8n50nz-d.pdf
FDD8N50NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2N5401YTA 2N5401_Rev2.1_May2016.pdf
2N5401YTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...400MHz
auf Bestellung 19200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
820+0.088 EUR
920+0.079 EUR
1040+0.07 EUR
2000+0.063 EUR
10000+0.062 EUR
Mindestbestellmenge: 820
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BC32725TA BC327.pdf
BC32725TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 160...400
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
459+0.16 EUR
637+0.11 EUR
735+0.097 EUR
1000+0.072 EUR
1132+0.063 EUR
2000+0.056 EUR
Mindestbestellmenge: 313
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1N4002G 1N4001-D.PDF
1N4002G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
667+0.11 EUR
898+0.08 EUR
1132+0.063 EUR
1266+0.056 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
1N4002RLG 1N4001-D.PDF
1N4002RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
auf Bestellung 4927 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
481+0.15 EUR
693+0.1 EUR
810+0.088 EUR
985+0.073 EUR
1127+0.063 EUR
1279+0.056 EUR
Mindestbestellmenge: 358
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RS1M RS1x.pdf
RS1M
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
auf Bestellung 962 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
353+0.2 EUR
477+0.15 EUR
544+0.13 EUR
658+0.11 EUR
747+0.096 EUR
Mindestbestellmenge: 250
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NRVHPRS1MFA rs1afa-d.pdf
NRVHPRS1MFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FQI4N90TU fqi4n90-d.pdf FQI4N90-D.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16.8A
Power dissipation: 140W
Gate charge: 30nC
Produkt ist nicht verfügbar
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MOC3023SM MOC3023SM-DTE.pdf
MOC3023SM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 400V; without zero voltage crossing driver
Type of optocoupler: optotriac
Insulation voltage: 5kV
Kind of output: without zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Output voltage: 400V
Manufacturer series: MOC302XM
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
141+0.51 EUR
154+0.47 EUR
166+0.43 EUR
178+0.4 EUR
500+0.33 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
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