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CAT25128HU4I-GT3 ONSEMI CAT25128-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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CAT25160HU4I-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D660D5&compId=CAT25080-D.pdf?ci_sign=f38bdf23c993eeb71f88d8ee89d8016cd5a6b706 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 16kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 2048x8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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CAT25320HU4I-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038DE80D5&compId=CAT25320-D.pdf?ci_sign=b804b38500121979c616e3ca037e7205dcabc09d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 32kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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CAT25640HU4I-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836040D5&compId=CAT25640-D.pdf?ci_sign=e1b8c76dbae8a9e2881d01665fb56abc326280ce Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 64kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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CAT34C02HU4IGT4A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F36E0D5&compId=CAT34C02-D.pdf?ci_sign=f4510991079a4bfb00060749f4e1a24db767b102 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 2kb EEPROM
Access time: 900ns
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory organisation: 256x8bit
Interface: I2C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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FCP067N65S3 FCP067N65S3 ONSEMI fcp067n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTH027N65S3F-F155 ONSEMI nth027n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1SMB5919BT3G 1SMB5919BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 9546 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
266+0.27 EUR
307+0.23 EUR
477+0.15 EUR
582+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 218
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MJD127G MJD127G ONSEMI MJD122_MJD127.PDF Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
71+1 EUR
Mindestbestellmenge: 42
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MCT9001 MCT9001 ONSEMI MCT9001.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
auf Bestellung 965 Stücke:
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73+0.99 EUR
107+0.67 EUR
121+0.59 EUR
133+0.54 EUR
146+0.49 EUR
Mindestbestellmenge: 73
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BAS21SLT1G BAS21SLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDFA4559AF1F820&compId=BAS21SLT1G.pdf?ci_sign=e684d4163dd37a631f2697235df38ad817239e50 Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 8189 Stücke:
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625+0.11 EUR
1064+0.067 EUR
1352+0.053 EUR
1507+0.047 EUR
1985+0.036 EUR
2284+0.031 EUR
2348+0.03 EUR
Mindestbestellmenge: 625
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MC33204DR2G MC33204DR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: 4
Integrated circuit features: rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
137+0.52 EUR
152+0.47 EUR
163+0.44 EUR
174+0.41 EUR
250+0.39 EUR
Mindestbestellmenge: 99
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KSC2383YTA KSC2383YTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
226+0.32 EUR
293+0.24 EUR
323+0.22 EUR
Mindestbestellmenge: 120
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MC78M05CDTRKG MC78M05CDTRKG ONSEMI mc78m_ser.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Produkt ist nicht verfügbar
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MC78M05CTG MC78M05CTG ONSEMI mc78m_ser.pdf description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Heatsink thickness: 0.508...0.61mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
159+0.45 EUR
183+0.39 EUR
205+0.35 EUR
209+0.34 EUR
Mindestbestellmenge: 117
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BCP53T1G BCP53T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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SBCP53-10T1G SBCP53-10T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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SBCP53T1G SBCP53T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
208+0.34 EUR
278+0.26 EUR
Mindestbestellmenge: 148
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BAT54SWT1G BAT54SWT1G ONSEMI BAT54SWT1-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
auf Bestellung 24083 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+0.11 EUR
944+0.076 EUR
1095+0.065 EUR
1563+0.046 EUR
1846+0.039 EUR
2033+0.035 EUR
3000+0.029 EUR
6000+0.024 EUR
Mindestbestellmenge: 455
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NV24C32DWVLT3G ONSEMI NV24C32LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C32MUW3VLTBG ONSEMI NV24C32LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C32UVLT2G ONSEMI NV24C32LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C32C4CTR ONSEMI CAV24C32-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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J111 J111 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8B7D2AD995F5EA&compId=J111.pdf?ci_sign=23158dcca2e47f7ef2d19b8846e159bbca0e7d3b Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: bulk
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
204+0.35 EUR
244+0.29 EUR
397+0.18 EUR
477+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 162
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FDMC7660 FDMC7660 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF4D36B10D5E28&compId=FDMC7660.pdf?ci_sign=a3f8e3c0e8cc9f77dae828e356702cd2412e3b82 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
auf Bestellung 2111 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
Mindestbestellmenge: 65
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NC7S00M5X NC7S00M5X ONSEMI NC7S00.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 14109 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
758+0.094 EUR
916+0.078 EUR
1386+0.052 EUR
1624+0.044 EUR
3000+0.043 EUR
Mindestbestellmenge: 500
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BC847BPDW1T1G BC847BPDW1T1G ONSEMI BC846BPDW1.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 6296 Stücke:
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417+0.17 EUR
544+0.13 EUR
673+0.11 EUR
946+0.076 EUR
1382+0.052 EUR
1603+0.045 EUR
3000+0.036 EUR
6000+0.032 EUR
Mindestbestellmenge: 417
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BC847BPDW1T2G BC847BPDW1T2G ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 2343 Stücke:
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358+0.2 EUR
432+0.17 EUR
491+0.15 EUR
717+0.1 EUR
851+0.084 EUR
1244+0.057 EUR
1446+0.049 EUR
Mindestbestellmenge: 358
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LM385D-2.5G LM385D-2.5G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
84+0.85 EUR
105+0.68 EUR
137+0.52 EUR
196+0.49 EUR
Mindestbestellmenge: 49
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MC14060BDG MC14060BDG ONSEMI mc14060b-d.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Case: SO16
Family: HEF4000B
Mounting: SMD
Kind of integrated circuit: 14bit; binary counter; oscillator
Type of integrated circuit: digital
Technology: CMOS
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
168+0.43 EUR
174+0.41 EUR
Mindestbestellmenge: 122
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MC74VHC245DWG ONSEMI MC74VHC245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
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MC74VHC245DWR2G ONSEMI MC74VHC245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
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DF04M DF04M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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LP2951CD-3.3R2G LP2951CD-3.3R2G ONSEMI LP2950-LP2951.PDF description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
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LP2951CDR2G LP2951CDR2G ONSEMI LP2950-LP2951.PDF Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
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182+0.39 EUR
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MC33164D-3G MC33164D-3G ONSEMI mc34164-d.pdf description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: tube
Number of channels: 1
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FCH041N60E ONSEMI FCH041N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
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FCH041N60F ONSEMI fch041n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
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N93C66BT3ETAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT93C66VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV93C66VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV93C66YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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BC817-40WT1G BC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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569+0.13 EUR
650+0.11 EUR
926+0.077 EUR
1087+0.066 EUR
1544+0.046 EUR
1774+0.04 EUR
Mindestbestellmenge: 455
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SBC817-40LT1G SBC817-40LT1G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC817-40LT3G SBC817-40LT3G ONSEMI BC817-xxL.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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NV24C08DWVLT3G ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C08MUW3VLTBG ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C08WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCP56T3G BCP56T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
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BC846CLT1G BC846CLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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715+0.1 EUR
1042+0.069 EUR
1380+0.051 EUR
Mindestbestellmenge: 715
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NTB25P06T4G ONSEMI ntb25p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
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BAT54AWT1G BAT54AWT1G ONSEMI BAT54AW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 5909 Stücke:
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715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
2174+0.033 EUR
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SBAT54ALT1G SBAT54ALT1G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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SBAT54ALT3G SBAT54ALT3G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G SBAT54AWT1G ONSEMI bat54awt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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CAT25128HU4I-GT3 CAT25128-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Produkt ist nicht verfügbar
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CAT25160HU4I-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D660D5&compId=CAT25080-D.pdf?ci_sign=f38bdf23c993eeb71f88d8ee89d8016cd5a6b706
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 16kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 2048x8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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CAT25320HU4I-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038DE80D5&compId=CAT25320-D.pdf?ci_sign=b804b38500121979c616e3ca037e7205dcabc09d
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 32kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Memory organisation: 4kx8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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CAT25640HU4I-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C9A836040D5&compId=CAT25640-D.pdf?ci_sign=e1b8c76dbae8a9e2881d01665fb56abc326280ce
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 64kb EEPROM
Access time: 40ns
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Interface: SPI
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT34C02HU4IGT4A pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F36E0D5&compId=CAT34C02-D.pdf?ci_sign=f4510991079a4bfb00060749f4e1a24db767b102
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 2kb EEPROM
Access time: 900ns
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory organisation: 256x8bit
Interface: I2C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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FCP067N65S3 fcp067n65s3-d.pdf
FCP067N65S3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTH027N65S3F-F155 nth027n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1SMB5919BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5919BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 9546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
266+0.27 EUR
307+0.23 EUR
477+0.15 EUR
582+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 218
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MJD127G MJD122_MJD127.PDF
MJD127G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: tube
Current gain: 100...12000
Frequency: 4MHz
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
71+1 EUR
Mindestbestellmenge: 42
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MCT9001 MCT9001.pdf
MCT9001
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
107+0.67 EUR
121+0.59 EUR
133+0.54 EUR
146+0.49 EUR
Mindestbestellmenge: 73
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BAS21SLT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDFA4559AF1F820&compId=BAS21SLT1G.pdf?ci_sign=e684d4163dd37a631f2697235df38ad817239e50
BAS21SLT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 8189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1064+0.067 EUR
1352+0.053 EUR
1507+0.047 EUR
1985+0.036 EUR
2284+0.031 EUR
2348+0.03 EUR
Mindestbestellmenge: 625
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MC33204DR2G mc33201-d.pdf
MC33204DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: 4
Integrated circuit features: rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
137+0.52 EUR
152+0.47 EUR
163+0.44 EUR
174+0.41 EUR
250+0.39 EUR
Mindestbestellmenge: 99
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KSC2383YTA KSC2383.pdf
KSC2383YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
226+0.32 EUR
293+0.24 EUR
323+0.22 EUR
Mindestbestellmenge: 120
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MC78M05CDTRKG mc78m_ser.pdf
MC78M05CDTRKG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Produkt ist nicht verfügbar
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MC78M05CTG description mc78m_ser.pdf
MC78M05CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Heatsink thickness: 0.508...0.61mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
159+0.45 EUR
183+0.39 EUR
205+0.35 EUR
209+0.34 EUR
Mindestbestellmenge: 117
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BCP53T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
BCP53T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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SBCP53-10T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
SBCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SBCP53T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
SBCP53T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
208+0.34 EUR
278+0.26 EUR
Mindestbestellmenge: 148
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BAT54SWT1G BAT54SWT1-D.PDF
BAT54SWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
auf Bestellung 24083 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
944+0.076 EUR
1095+0.065 EUR
1563+0.046 EUR
1846+0.039 EUR
2033+0.035 EUR
3000+0.029 EUR
6000+0.024 EUR
Mindestbestellmenge: 455
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NV24C32DWVLT3G NV24C32LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C32MUW3VLTBG NV24C32LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C32UVLT2G NV24C32LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C32C4CTR CAV24C32-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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J111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8B7D2AD995F5EA&compId=J111.pdf?ci_sign=23158dcca2e47f7ef2d19b8846e159bbca0e7d3b
J111
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: bulk
auf Bestellung 2119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
204+0.35 EUR
244+0.29 EUR
397+0.18 EUR
477+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
FDMC7660 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF4D36B10D5E28&compId=FDMC7660.pdf?ci_sign=a3f8e3c0e8cc9f77dae828e356702cd2412e3b82
FDMC7660
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
auf Bestellung 2111 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
Mindestbestellmenge: 65
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NC7S00M5X NC7S00.pdf
NC7S00M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 14109 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
758+0.094 EUR
916+0.078 EUR
1386+0.052 EUR
1624+0.044 EUR
3000+0.043 EUR
Mindestbestellmenge: 500
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BC847BPDW1T1G BC846BPDW1.PDF
BC847BPDW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 6296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
673+0.11 EUR
946+0.076 EUR
1382+0.052 EUR
1603+0.045 EUR
3000+0.036 EUR
6000+0.032 EUR
Mindestbestellmenge: 417
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BC847BPDW1T2G bc846bpdw1t1-d.pdf
BC847BPDW1T2G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
432+0.17 EUR
491+0.15 EUR
717+0.1 EUR
851+0.084 EUR
1244+0.057 EUR
1446+0.049 EUR
Mindestbestellmenge: 358
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LM385D-2.5G LM285_LM385B.PDF
LM385D-2.5G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
auf Bestellung 447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
84+0.85 EUR
105+0.68 EUR
137+0.52 EUR
196+0.49 EUR
Mindestbestellmenge: 49
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MC14060BDG mc14060b-d.pdf
MC14060BDG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Case: SO16
Family: HEF4000B
Mounting: SMD
Kind of integrated circuit: 14bit; binary counter; oscillator
Type of integrated circuit: digital
Technology: CMOS
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
168+0.43 EUR
174+0.41 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC245DWG MC74VHC245-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC245DWR2G MC74VHC245-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
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DF04M pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67
DF04M
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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LP2951CD-3.3R2G description LP2950-LP2951.PDF
LP2951CD-3.3R2G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
Produkt ist nicht verfügbar
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LP2951CDR2G LP2950-LP2951.PDF
LP2951CDR2G
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
auf Bestellung 5279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
182+0.39 EUR
201+0.36 EUR
234+0.31 EUR
261+0.27 EUR
500+0.25 EUR
1000+0.23 EUR
2500+0.21 EUR
Mindestbestellmenge: 125
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MC33164D-3G description mc34164-d.pdf
MC33164D-3G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 32µA
Maximum output current: 30mA
Threshold on-voltage: 2.71V
Kind of package: tube
Number of channels: 1
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.3 EUR
Mindestbestellmenge: 31
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FCH041N60E FCH041N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
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FCH041N60F fch041n60f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
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N93C66BT3ETAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT93C66VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC817-40WT1G bc817-40w-d.pdf
BC817-40WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2614 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
650+0.11 EUR
926+0.077 EUR
1087+0.066 EUR
1544+0.046 EUR
1774+0.04 EUR
Mindestbestellmenge: 455
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SBC817-40LT1G BC817-xxL.pdf
SBC817-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
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SBC817-40LT3G BC817-xxL.pdf
SBC817-40LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NTHL040N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a
NTHL040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NV24C08DWVLT3G NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C08MUW3VLTBG NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08YI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCP56T3G bcp56t1-d.pdf
BCP56T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846ALT1G.PDF
BC846CLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1380+0.051 EUR
Mindestbestellmenge: 715
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NTB25P06T4G ntb25p06-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G BAT54AW.pdf
BAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 5909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
2174+0.033 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54ALT1G bat54alt1-d.pdf
SBAT54ALT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54ALT3G bat54alt1-d.pdf
SBAT54ALT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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