Foto | Bezeichnung | Hersteller | Beschreibung |
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MC14025BDR2G | ONSEMI |
![]() Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: NOR Kind of package: reel; tape Technology: CMOS Number of channels: triple; 3 Family: HEF4000B |
auf Bestellung 1480 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHCT125ADTRG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA Manufacturer series: VHCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KST10MTF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Kind of transistor: RF Power dissipation: 0.35W Collector-emitter voltage: 25V Current gain: 60 Frequency: 650MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 1123 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC244DTG | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: tube Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC244DTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC244DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Technology: CMOS Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX84C4V7LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 3µA |
auf Bestellung 13489 Stücke: Lieferzeit 14-21 Tag (e) |
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ADP3120AJRZ-RL | ONSEMI |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 4.6...13.2V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -20...150°C Impulse rise time: 20ns Pulse fall time: 11ns Kind of package: reel; tape Protection: overheating OTP; undervoltage UVP Voltage class: 35V |
auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2073TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1.5A Power dissipation: 25W Case: TO220AB Current gain: 40...140 Mounting: THT Kind of package: tube Frequency: 4MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSS12100XV6T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Power dissipation: 0.65W Collector current: 1A Collector-emitter voltage: 12V Current gain: 100 Application: automotive industry Polarisation: bipolar Case: SOT563 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR16 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Case: SOT23; TO236AB Polarisation: bipolar Mounting: SMD Type of transistor: PNP Collector current: 0.8A Power dissipation: 0.35W Collector-emitter voltage: 60V Frequency: 300MHz Kind of package: reel; tape |
auf Bestellung 3591 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14081BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14081BDTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL4503M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Manufacturer series: HCPL4503M CTR@If: 19-50%@16mA Slew rate: 10kV/μs Transfer rate: 1Mbps |
auf Bestellung 903 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14557BDWG | ONSEMI |
![]() Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: shift register Supply voltage: 3...18V DC Case: SO16WB Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Number of channels: 1 Number of inputs: 12 Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86101 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FCMT299N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SBCP56-10T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT125DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Manufacturer series: ACT Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of output: 3-state |
auf Bestellung 2265 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3111ESX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -0.9...1.1A Impulse rise time: 18ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 17ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
auf Bestellung 1063 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP361SNT1G | ONSEMI |
![]() Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Input voltage: 1.2...20V Threshold on-voltage: 3V Kind of output: transistor Application: USB |
auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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FIN1002M5X | ONSEMI |
![]() Description: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Case: SOT23-5 Kind of integrated circuit: differential; line receiver; translator |
auf Bestellung 1655 Stücke: Lieferzeit 14-21 Tag (e) |
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2SB815-7-TB-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Frequency: 250MHz Type of transistor: PNP Mounting: SMD Power dissipation: 0.2W Collector current: 0.7A Collector-emitter voltage: 15V Current gain: 300...600 Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP81080DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Case: SO8 Operating temperature: -40...140°C Output current: -800...500mA Impulse rise time: 19ns Supply voltage: 5.5...20V DC Type of integrated circuit: driver Pulse fall time: 17ns Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side Mounting: SMD |
auf Bestellung 767 Stücke: Lieferzeit 14-21 Tag (e) |
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SS12 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Power dissipation: 1.1W |
auf Bestellung 6353 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: logic level Type of transistor: N-MOSFET Gate charge: 2.5nC Drain current: 0.17A Power dissipation: 0.36W On-state resistance: 12Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 18418 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain current: 0.17A Power dissipation: 0.2W Pulsed drain current: 0.68A On-state resistance: 10Ω Gate-source voltage: ±20V Drain-source voltage: 100V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 1290 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Mounting: THT Leakage current: 50µA Max. forward voltage: 1V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: bulk Case: DO27 Type of diode: rectifying Semiconductor structure: single diode |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3022M | ONSEMI |
![]() Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC302XM |
auf Bestellung 537 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G08DTT1G | ONSEMI |
![]() ![]() Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Family: VHC Number of inputs: 2 Kind of gate: AND |
auf Bestellung 3145 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16HT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 36A Leakage current: 30µA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
1N5407G | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM260EV2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM260EV2T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. forward impulse current: 50A Max. off-state voltage: 60V Case: POWERMITE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ESD9R3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Kind of package: reel; tape Case: SOD923 Mounting: SMD Semiconductor structure: unidirectional Version: ESD Leakage current: 1nA Peak pulse power dissipation: 0.15W Max. forward impulse current: 1A Max. off-state voltage: 3.3V Breakdown voltage: 4.8V |
auf Bestellung 5551 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC857BDW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 598 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP451AFCT2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Output current: 3A Control voltage: 0...5.5V DC Kind of integrated circuit: high-side Active logical level: high Kind of output: N-Channel On-state resistance: 35mΩ Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP451FCT2G | ONSEMI |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Output current: 3A Control voltage: 0...5.5V DC Kind of integrated circuit: high-side Active logical level: high Kind of output: N-Channel On-state resistance: 35mΩ Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N4148WT | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.1A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD523F Max. forward voltage: 1V Reverse recovery time: 4ns Max. load current: 0.2A Capacitance: 4pF |
auf Bestellung 1504 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54XV2T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape |
auf Bestellung 11900 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5239BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Case: SOD123 Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 9.1V Manufacturer series: MMSZ52xxB |
auf Bestellung 927 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86182 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 364A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FXMAR2102UMX | ONSEMI |
![]() Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Case: MLP8 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 2 Number of inputs: 2 Frequency: 50MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
auf Bestellung 4681 Stücke: Lieferzeit 14-21 Tag (e) |
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BC639 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Case: TO92 Mounting: THT Frequency: 100MHz Power: 0.8W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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J310 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 60mA Case: TO92 Mounting: THT Power: 0.35W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SS8550 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TIP41C-TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJE15030 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5401G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SS8050C | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC550CG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 300MHz Power: 0.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBZ20VALT1G | ONSEMI |
![]() Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5% Case: SOT23 Mounting: SMD Kind of package: reel; tape Leakage current: 50nA Max. forward impulse current: 1.4A Tolerance: ±5% Type of diode: TVS array Max. off-state voltage: 17V Breakdown voltage: 20V Version: ESD Peak pulse power dissipation: 40W Semiconductor structure: common anode; double |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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LF353N | ONSEMI |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 16V/μs Operating temperature: 0...70°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SS25 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SS25FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74ACT74DR2G | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Manufacturer series: ACT Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered |
auf Bestellung 1866 Stücke: Lieferzeit 14-21 Tag (e) |
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BC560CG | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: TO92 Mounting: THT Frequency: 150MHz Power: 0.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MPSA42G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
LM358ADR2G | ONSEMI |
![]() Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Input offset voltage: 5mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Number of channels: 2 Bandwidth: 1.1MHz Case: SO8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: 0...70°C Input offset current: 75nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MC14025BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: NOR
Kind of package: reel; tape
Technology: CMOS
Number of channels: triple; 3
Family: HEF4000B
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
199+ | 0.36 EUR |
223+ | 0.32 EUR |
236+ | 0.3 EUR |
256+ | 0.28 EUR |
MC74VHCT125ADTRG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHCT
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KST10MTF |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
618+ | 0.12 EUR |
958+ | 0.075 EUR |
1123+ | 0.064 EUR |
MC74VHC244DTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Technology: CMOS
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74VHC244DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74VHC244DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C4V7LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
auf Bestellung 13489 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
589+ | 0.12 EUR |
782+ | 0.092 EUR |
910+ | 0.079 EUR |
1405+ | 0.051 EUR |
1701+ | 0.042 EUR |
2552+ | 0.028 EUR |
2977+ | 0.024 EUR |
5000+ | 0.014 EUR |
ADP3120AJRZ-RL |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
104+ | 0.69 EUR |
117+ | 0.61 EUR |
146+ | 0.49 EUR |
155+ | 0.46 EUR |
KSC2073TU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSS12100XV6T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
Case: SOT563
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
Case: SOT563
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
BSR16 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Case: SOT23; TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
auf Bestellung 3591 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
183+ | 0.39 EUR |
268+ | 0.27 EUR |
317+ | 0.23 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
3000+ | 0.11 EUR |
MC14081BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
133+ | 0.54 EUR |
149+ | 0.48 EUR |
175+ | 0.41 EUR |
183+ | 0.39 EUR |
MC14081BDTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
108+ | 0.66 EUR |
132+ | 0.54 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
HCPL4503M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Manufacturer series: HCPL4503M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Transfer rate: 1Mbps
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Manufacturer series: HCPL4503M
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Transfer rate: 1Mbps
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.53 EUR |
34+ | 2.12 EUR |
41+ | 1.76 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
50+ | 1.5 EUR |
100+ | 1.49 EUR |
MC14557BDWG |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86101 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCMT299N60 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBCP56-10T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
181+ | 0.4 EUR |
SBAS16HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
542+ | 0.13 EUR |
830+ | 0.086 EUR |
MC74ACT125DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: ACT
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
auf Bestellung 2265 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
166+ | 0.43 EUR |
186+ | 0.38 EUR |
206+ | 0.35 EUR |
214+ | 0.33 EUR |
500+ | 0.32 EUR |
FAN3111ESX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Impulse rise time: 18ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
76+ | 0.95 EUR |
93+ | 0.77 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
200+ | 0.54 EUR |
NCP361SNT1G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Application: USB
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Kind of output: transistor
Application: USB
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
107+ | 0.67 EUR |
129+ | 0.56 EUR |
141+ | 0.51 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
FIN1002M5X |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line receiver; translator
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line receiver; translator
auf Bestellung 1655 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
87+ | 0.83 EUR |
106+ | 0.68 EUR |
126+ | 0.57 EUR |
133+ | 0.54 EUR |
139+ | 0.52 EUR |
2SB815-7-TB-E |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP81080DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Operating temperature: -40...140°C
Output current: -800...500mA
Impulse rise time: 19ns
Supply voltage: 5.5...20V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Operating temperature: -40...140°C
Output current: -800...500mA
Impulse rise time: 19ns
Supply voltage: 5.5...20V DC
Type of integrated circuit: driver
Pulse fall time: 17ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
61+ | 1.19 EUR |
67+ | 1.07 EUR |
68+ | 1.06 EUR |
71+ | 1.02 EUR |
100+ | 0.97 EUR |
SS12 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 6353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
334+ | 0.21 EUR |
355+ | 0.2 EUR |
379+ | 0.19 EUR |
BSS123 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Gate charge: 2.5nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 12Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 18418 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
278+ | 0.26 EUR |
397+ | 0.18 EUR |
586+ | 0.12 EUR |
694+ | 0.1 EUR |
1812+ | 0.039 EUR |
1909+ | 0.037 EUR |
BSS123W |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain current: 0.17A
Power dissipation: 0.2W
Pulsed drain current: 0.68A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
360+ | 0.2 EUR |
530+ | 0.14 EUR |
600+ | 0.12 EUR |
675+ | 0.11 EUR |
710+ | 0.1 EUR |
1N5408G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: bulk
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
222+ | 0.32 EUR |
247+ | 0.29 EUR |
350+ | 0.2 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
MOC3022M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 537 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
114+ | 0.63 EUR |
120+ | 0.6 EUR |
158+ | 0.45 EUR |
167+ | 0.43 EUR |
MC74VHC1G08DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Number of inputs: 2
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Number of inputs: 2
Kind of gate: AND
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
345+ | 0.21 EUR |
395+ | 0.18 EUR |
535+ | 0.13 EUR |
3000+ | 0.12 EUR |
SBAS16HT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5407G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTSM260EV2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTSM260EV2T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Case: POWERMITE
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ESD9R3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Semiconductor structure: unidirectional
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Semiconductor structure: unidirectional
Version: ESD
Leakage current: 1nA
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
auf Bestellung 5551 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
174+ | 0.41 EUR |
214+ | 0.33 EUR |
243+ | 0.29 EUR |
257+ | 0.28 EUR |
500+ | 0.27 EUR |
SBC857BDW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
598+ | 0.12 EUR |
NCP451AFCT2G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP451FCT2G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Output current: 3A
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Active logical level: high
Kind of output: N-Channel
On-state resistance: 35mΩ
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4148WT |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD523F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Max. load current: 0.2A
Capacitance: 4pF
auf Bestellung 1504 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
820+ | 0.087 EUR |
1129+ | 0.063 EUR |
1316+ | 0.054 EUR |
1504+ | 0.047 EUR |
BAT54XV2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
auf Bestellung 11900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
725+ | 0.099 EUR |
1013+ | 0.071 EUR |
1171+ | 0.061 EUR |
1608+ | 0.044 EUR |
2165+ | 0.033 EUR |
2294+ | 0.031 EUR |
6000+ | 0.03 EUR |
MMSZ5239BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 9.1V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 9.1V
Manufacturer series: MMSZ52xxB
auf Bestellung 927 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
705+ | 0.1 EUR |
927+ | 0.077 EUR |
FDMS86182 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FXMAR2102UMX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Number of inputs: 2
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 4681 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
100+ | 0.84 EUR |
BC639 |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Produkt ist nicht verfügbar
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J310 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Produkt ist nicht verfügbar
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SS8550 |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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TIP41C-TU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MJE15030 |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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2N5401G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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SS8050C |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BC550CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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MMBZ20VALT1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 1.4A
Tolerance: ±5%
Type of diode: TVS array
Max. off-state voltage: 17V
Breakdown voltage: 20V
Version: ESD
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 1.4A
Tolerance: ±5%
Type of diode: TVS array
Max. off-state voltage: 17V
Breakdown voltage: 20V
Version: ESD
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
521+ | 0.14 EUR |
658+ | 0.11 EUR |
1244+ | 0.057 EUR |
1500+ | 0.047 EUR |
LF353N |
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Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Produkt ist nicht verfügbar
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SS25 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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SS25FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74ACT74DR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
auf Bestellung 1866 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
222+ | 0.32 EUR |
249+ | 0.29 EUR |
290+ | 0.25 EUR |
321+ | 0.22 EUR |
BC560CG | ![]() |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MPSA42G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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LM358ADR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 75nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 75nA
Produkt ist nicht verfügbar
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