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1N4739A-T50A | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 9.1V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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| MUR460G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 4A; bulk; Ifsm: 70A; DO201AD; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 70A Case: DO201AD Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
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| MMBD1401ALT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape Max. off-state voltage: 250V Kind of package: reel; tape Semiconductor structure: single diode Features of semiconductor devices: small signal Mounting: SMD Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Load current: 0.6A |
Produkt ist nicht verfügbar |
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| MMBD1403ALT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape Max. off-state voltage: 250V Kind of package: reel; tape Semiconductor structure: double series Features of semiconductor devices: small signal Mounting: SMD Case: SOT23 Type of diode: switching Reverse recovery time: 50ns Load current: 0.6A |
Produkt ist nicht verfügbar |
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| MBR2045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.61V Kind of package: reel; tape Max. forward impulse current: 0.4kA |
Produkt ist nicht verfügbar |
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| ES1JAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 34ns; SMA flat; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 34ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES1JFL | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| US1MFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RS1MFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RS1MFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ES1DAF | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA flat; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA flat Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 1N914B | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: bulk Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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| 1N914BTR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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| 1N914-T50A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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| 1N914ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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BC549CTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
auf Bestellung 1563 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4750A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
auf Bestellung 1973 Stücke: Lieferzeit 14-21 Tag (e) |
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BCV27 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 1.2A Power dissipation: 0.35W Collector-emitter voltage: 30V Current gain: 10k Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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| US2MA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BAT43XV2 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 6105 Stücke: Lieferzeit 14-21 Tag (e) |
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1N914TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Kind of package: reel; tape Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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MC14044BDG | ONSEMI |
Category: Latches Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Kind of package: tube Trigger: level-triggered Kind of output: 3-state Supply voltage: 3...18V DC Kind of integrated circuit: RS latch Number of channels: 4 Family: HEF4000B |
auf Bestellung 667 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC4066DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...12V DC Kind of package: reel; tape Technology: CMOS Manufacturer series: VHC Operating temperature: -55...125°C Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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MC74VHC4066DTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...12V DC Kind of package: reel; tape Technology: CMOS Manufacturer series: VHC Operating temperature: -55...125°C Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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MMBTA56LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 7560 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA56LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
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NCP1250BP65G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: AC/DC switcher; PWM controller Case: DIP8 Output current: -500...300mA Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 8.8...28V DC Frequency: 61...71kHz |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAW56M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT723 Max. forward voltage: 1V Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
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| GBPC3510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
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LM317MABDTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Output voltage: 1.2...37V Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.5A Tolerance: ±4% Number of channels: 1 Input voltage: 1.2...40V Kind of voltage regulator: adjustable; linear Kind of package: tube Case: DPAK Manufacturer series: LM317M |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
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| SRV05-4MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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1N4007G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
auf Bestellung 5048 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100EPT22DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator Number of channels: 2 Manufacturer series: 100EPT Case: SO8 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...3.6V DC Number of outputs: 2 Number of inputs: 4 |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCH3474-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD Mounting: SMD On-state resistance: 50mΩ Power dissipation: 1W Version: ESD Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: MCPH3 |
Produkt ist nicht verfügbar |
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MC74ACT138DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT Supply voltage: 4.5...5.5V DC Case: SO16 Technology: TTL Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of inputs: 1 Number of channels: 1 Kind of integrated circuit: decoder; demultiplexer Manufacturer series: ACT Family: ACT |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
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LP2951ACDM-3.3RG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 3369 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
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| MCH3484-TL-W | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD Mounting: SMD On-state resistance: 40mΩ Power dissipation: 1W Version: ESD Drain current: 4.5A Gate-source voltage: ±5V Drain-source voltage: 20V Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Case: MCPH3 |
Produkt ist nicht verfügbar |
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2N7002KT7G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Pulsed drain current: 5A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 3514 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4435BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 909 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM393EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 20nA Operating temperature: 0...70°C Operating voltage: 2...36V |
Produkt ist nicht verfügbar |
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BSS138K | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3662 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 50V Drain current: 0.22A Gate charge: 1.7nC On-state resistance: 3.5Ω Power dissipation: 0.36W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 12260 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCB110N65F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 105A |
Produkt ist nicht verfügbar |
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SC70; SOT323 Polarisation: unipolar Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Power dissipation: 0.29W Gate-source voltage: ±8V |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4148-T26A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
auf Bestellung 15672 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4736A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
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1N4736ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC74AC125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: tube Quiescent current: 80µA |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Leakage current: 2µA Power dissipation: 0.4W Max. forward impulse current: 0.6A |
auf Bestellung 14122 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MBRS130LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.395V Kind of package: reel; tape |
auf Bestellung 5791 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDBL0150N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 357W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCD7N60TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCI7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 +1 |
FCH47N60F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDBL0240N100 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 210A Pulsed drain current: 910A Power dissipation: 300W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 79nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Topology: flyback Case: SO14 Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Kind of package: reel; tape Mounting: SMD Operating temperature: -40...105°C Duty cycle factor: 0...96% Output current: 1A Power: 862mW Number of channels: 1 Supply voltage: 8.4...36V Operating voltage: 7.6...36V Frequency: 48...500kHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCD620N60ZF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 21.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCA20N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 75nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N4739A-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 9.1V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 9.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR460G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; bulk; Ifsm: 70A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; bulk; Ifsm: 70A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1401ALT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape
Max. off-state voltage: 250V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape
Max. off-state voltage: 250V
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1403ALT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape
Max. off-state voltage: 250V
Kind of package: reel; tape
Semiconductor structure: double series
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.6A; 50ns; SOT23; reel,tape
Max. off-state voltage: 250V
Kind of package: reel; tape
Semiconductor structure: double series
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2045MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Kind of package: reel; tape
Max. forward impulse current: 0.4kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 34ns; SMA flat; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 34ns; SMA flat; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 34ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JFL |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| US1MFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1MFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1MFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1DAF |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N914B |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N914BTR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N914-T50A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N914ATR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC549CTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 1563 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 360+ | 0.2 EUR |
| 667+ | 0.11 EUR |
| 981+ | 0.073 EUR |
| 1124+ | 0.064 EUR |
| 1N4750A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 658+ | 0.11 EUR |
| 787+ | 0.091 EUR |
| 1025+ | 0.07 EUR |
| 1389+ | 0.051 EUR |
| 1588+ | 0.045 EUR |
| BCV27 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.2A
Power dissipation: 0.35W
Collector-emitter voltage: 30V
Current gain: 10k
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.2A
Power dissipation: 0.35W
Collector-emitter voltage: 30V
Current gain: 10k
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 238+ | 0.3 EUR |
| US2MA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT43XV2 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 6105 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| 618+ | 0.12 EUR |
| 792+ | 0.09 EUR |
| 1263+ | 0.057 EUR |
| 1701+ | 0.042 EUR |
| 1N914TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14044BDG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: tube
Trigger: level-triggered
Kind of output: 3-state
Supply voltage: 3...18V DC
Kind of integrated circuit: RS latch
Number of channels: 4
Family: HEF4000B
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: tube
Trigger: level-triggered
Kind of output: 3-state
Supply voltage: 3...18V DC
Kind of integrated circuit: RS latch
Number of channels: 4
Family: HEF4000B
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 172+ | 0.42 EUR |
| 206+ | 0.35 EUR |
| 229+ | 0.31 EUR |
| 249+ | 0.29 EUR |
| 258+ | 0.28 EUR |
| 288+ | 0.27 EUR |
| MC74VHC4066DR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC4066DTR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Kind of package: reel; tape
Technology: CMOS
Manufacturer series: VHC
Operating temperature: -55...125°C
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA56LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 7560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 569+ | 0.13 EUR |
| 823+ | 0.087 EUR |
| 968+ | 0.074 EUR |
| 1205+ | 0.059 EUR |
| 1417+ | 0.05 EUR |
| 1662+ | 0.043 EUR |
| 5000+ | 0.03 EUR |
| MMBTA56LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1250BP65G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP8
Output current: -500...300mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.8...28V DC
Frequency: 61...71kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP8
Output current: -500...300mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 8.8...28V DC
Frequency: 61...71kHz
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 70+ | 1.03 EUR |
| 91+ | 0.79 EUR |
| 95+ | 0.76 EUR |
| BAW56M3T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3510W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM317MABDTG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Output voltage: 1.2...37V
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; linear
Kind of package: tube
Case: DPAK
Manufacturer series: LM317M
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Output voltage: 1.2...37V
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Kind of voltage regulator: adjustable; linear
Kind of package: tube
Case: DPAK
Manufacturer series: LM317M
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 302+ | 0.24 EUR |
| SRV05-4MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4007G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 5048 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 1017+ | 0.07 EUR |
| 1337+ | 0.053 EUR |
| 1530+ | 0.047 EUR |
| 2000+ | 0.04 EUR |
| 5000+ | 0.039 EUR |
| MC100EPT22DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Manufacturer series: 100EPT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of outputs: 2
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Manufacturer series: 100EPT
Case: SO8
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Number of outputs: 2
Number of inputs: 4
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.61 EUR |
| 10+ | 9.6 EUR |
| MCH3474-TL-W |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 50mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 50mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT138DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Supply voltage: 4.5...5.5V DC
Case: SO16
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of channels: 1
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: ACT
Family: ACT
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Supply voltage: 4.5...5.5V DC
Case: SO16
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 1
Number of channels: 1
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: ACT
Family: ACT
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 173+ | 0.41 EUR |
| 186+ | 0.39 EUR |
| 203+ | 0.35 EUR |
| 250+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| LP2951ACDM-3.3RG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 3369 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 152+ | 0.47 EUR |
| 189+ | 0.38 EUR |
| 250+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
| BSS138-G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 274+ | 0.26 EUR |
| MCH3484-TL-W |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; 1W; MCPH3; ESD
Mounting: SMD
On-state resistance: 40mΩ
Power dissipation: 1W
Version: ESD
Drain current: 4.5A
Gate-source voltage: ±5V
Drain-source voltage: 20V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: MCPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KT7G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3514 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 544+ | 0.13 EUR |
| 949+ | 0.075 EUR |
| 1374+ | 0.052 EUR |
| 1563+ | 0.046 EUR |
| 3500+ | 0.037 EUR |
| FDS4435BZ | |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 79+ | 0.91 EUR |
| 91+ | 0.79 EUR |
| 133+ | 0.54 EUR |
| 155+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| LM393EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
Operating temperature: 0...70°C
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
Operating temperature: 0...70°C
Operating voltage: 2...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138K |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3662 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 397+ | 0.18 EUR |
| 587+ | 0.12 EUR |
| 700+ | 0.1 EUR |
| 1029+ | 0.069 EUR |
| 1147+ | 0.062 EUR |
| 3000+ | 0.053 EUR |
| BSS138 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 50V
Drain current: 0.22A
Gate charge: 1.7nC
On-state resistance: 3.5Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 50V
Drain current: 0.22A
Gate charge: 1.7nC
On-state resistance: 3.5Ω
Power dissipation: 0.36W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 12260 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 596+ | 0.12 EUR |
| 727+ | 0.098 EUR |
| 977+ | 0.073 EUR |
| 1303+ | 0.055 EUR |
| 1458+ | 0.049 EUR |
| 3000+ | 0.042 EUR |
| 6000+ | 0.039 EUR |
| 9000+ | 0.038 EUR |
| FCB110N65F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTS2101PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Power dissipation: 0.29W
Gate-source voltage: ±8V
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 199+ | 0.36 EUR |
| 1N4148-T26A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
auf Bestellung 15672 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1137+ | 0.063 EUR |
| 1471+ | 0.049 EUR |
| 3547+ | 0.02 EUR |
| 5556+ | 0.013 EUR |
| 6330+ | 0.011 EUR |
| 7143+ | 0.01 EUR |
| 7693+ | 0.0093 EUR |
| 1N4736A-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4736ATR | |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC125DG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Quiescent current: 80µA
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 136+ | 0.53 EUR |
| 150+ | 0.48 EUR |
| 165+ | 0.43 EUR |
| 178+ | 0.4 EUR |
| BAT54T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Leakage current: 2µA
Power dissipation: 0.4W
Max. forward impulse current: 0.6A
auf Bestellung 14122 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 782+ | 0.092 EUR |
| 878+ | 0.082 EUR |
| 1117+ | 0.064 EUR |
| 1389+ | 0.051 EUR |
| 1701+ | 0.042 EUR |
| 2041+ | 0.035 EUR |
| 2273+ | 0.031 EUR |
| 2552+ | 0.028 EUR |
| MBRS130LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
auf Bestellung 5791 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 288+ | 0.25 EUR |
| 313+ | 0.23 EUR |
| 379+ | 0.19 EUR |
| 417+ | 0.17 EUR |
| 481+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| FDBL0150N60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD7N60TM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCI7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH47N60F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.2 EUR |
| 10+ | 11.68 EUR |
| FDBL0240N100 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3843BVD1R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV3843BVDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Topology: flyback
Case: SO14
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Duty cycle factor: 0...96%
Output current: 1A
Power: 862mW
Number of channels: 1
Supply voltage: 8.4...36V
Operating voltage: 7.6...36V
Frequency: 48...500kHz
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Topology: flyback
Case: SO14
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...105°C
Duty cycle factor: 0...96%
Output current: 1A
Power: 862mW
Number of channels: 1
Supply voltage: 8.4...36V
Operating voltage: 7.6...36V
Frequency: 48...500kHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD620N60ZF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCA20N60-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH