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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 14.5W
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5H-023
Type of integrated circuit: driver
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MMSZ5248CT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G ONSEMI MMSZ52xxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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RS1J RS1J ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
323+0.22 EUR
410+0.17 EUR
486+0.14 EUR
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RS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JFP ONSEMI rs1mfp-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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NRVHPRS1JFA NRVHPRS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU ONSEMI KSD880.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
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FGH40T120SMD FGH40T120SMD ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 188 Stücke:
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8+10.02 EUR
10+8.64 EUR
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FGY60T120SQDN FGY60T120SQDN ONSEMI fgy60t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
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6+12.1 EUR
7+11.53 EUR
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FGY75T120SQDN FGY75T120SQDN ONSEMI fgy75t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
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FGH40T120SMD-F155 FGH40T120SMD-F155 ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 8 Stücke:
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6+13.89 EUR
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FQPF3N80C FQPF3N80C ONSEMI FQPF3N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
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FQP3N80C FQP3N80C ONSEMI FAIRS47784-1.pdf?t.download=true&u=5oefqw fqpf3n80c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
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NSVBC847BTT1G ONSEMI bc847att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Produkt ist nicht verfügbar
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2SB1201S-TL-E ONSEMI 2sb1201-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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MC14027BDR2G MC14027BDR2G ONSEMI mc14027b-d.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
154+0.47 EUR
171+0.42 EUR
197+0.36 EUR
216+0.33 EUR
234+0.31 EUR
250+0.29 EUR
256+0.28 EUR
500+0.27 EUR
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NVLJWS022N06CLTAG ONSEMI nvljws022n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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KSA1013YTA KSA1013YTA ONSEMI KSA1013.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
auf Bestellung 3522 Stücke:
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105+0.69 EUR
171+0.42 EUR
295+0.24 EUR
353+0.2 EUR
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KSA1013YBU KSA1013YBU ONSEMI KSA1013.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
auf Bestellung 5878 Stücke:
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99+0.73 EUR
125+0.57 EUR
146+0.49 EUR
247+0.29 EUR
500+0.23 EUR
Mindestbestellmenge: 99
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DTC144TET1G ONSEMI dtc144t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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BZX85C12-T50R ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
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1N5380BG 1N5380BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 801 Stücke:
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193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
311+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 193
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1N5380BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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MC7918CTG MC7918CTG ONSEMI MC7900-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2409 Stücke:
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103+0.7 EUR
146+0.49 EUR
183+0.39 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 103
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BC638TA ONSEMI BC638.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
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BC638TA BC638TA ONSEMI BC638.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
293+0.24 EUR
505+0.14 EUR
727+0.098 EUR
1000+0.086 EUR
Mindestbestellmenge: 209
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MC33079DR2G MC33079DR2G ONSEMI MC33079PG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Input offset voltage: 3.5mV
Slew rate: 7V/μs
auf Bestellung 3686 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
268+0.27 EUR
295+0.24 EUR
341+0.21 EUR
363+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 209
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MC33074DR2G MC33074DR2G ONSEMI MC3x07x.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 810 Stücke:
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120+0.6 EUR
122+0.59 EUR
160+0.45 EUR
163+0.44 EUR
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MC33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
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MC33074ADR2G MC33074ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074ADTBR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074DTBR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MJH11022G MJH11022G ONSEMI MJH11017G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.66 EUR
16+4.6 EUR
17+4.23 EUR
21+3.49 EUR
Mindestbestellmenge: 13
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MJH11020G MJH11020G ONSEMI MJH11017G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
auf Bestellung 23 Stücke:
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12+6.28 EUR
Mindestbestellmenge: 12
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MJH11021G MJH11021G ONSEMI MJH11017G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.35 EUR
15+4.92 EUR
17+4.39 EUR
Mindestbestellmenge: 14
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74AC04SC 74AC04SC ONSEMI 74AC04SC.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
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176+0.41 EUR
204+0.35 EUR
225+0.32 EUR
240+0.3 EUR
275+0.28 EUR
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MM74HCT74M MM74HCT74M ONSEMI MM74HCT74M.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: HCT
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FCD380N60E ONSEMI fcd380n60e-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FCP380N60 ONSEMI fcpf380n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E ONSEMI FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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NTD280N60S5Z ONSEMI ntd280n60s5z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 ONSEMI fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E ONSEMI FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV70LT3G BAV70LT3G ONSEMI bav70lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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MC33151DG MC33151DG ONSEMI MC33151_MC34151.PDF Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
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49+1.47 EUR
66+1.09 EUR
72+1 EUR
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MC33151PG MC33151PG ONSEMI MC33151_MC34151.PDF description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of output: inverting
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MC33151DR2G MC33151DR2G ONSEMI MC33151_MC34151.PDF Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
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MC34151DG MC34151DG ONSEMI MC34151DG.PDF description Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1N5404RLG 1N5404RLG ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: reel; tape
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371+0.19 EUR
432+0.17 EUR
468+0.15 EUR
506+0.14 EUR
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MOCD223M MOCD223M ONSEMI MOCD223M.pdf description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
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MBRB20200CTT4G MBRB20200CTT4G ONSEMI MBRB20200CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MCT9001 MCT9001 ONSEMI MCT9001.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
auf Bestellung 892 Stücke:
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81+0.89 EUR
105+0.68 EUR
136+0.53 EUR
171+0.42 EUR
211+0.34 EUR
250+0.32 EUR
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MCT9001SD MCT9001SD ONSEMI mct9001-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Manufacturer series: MCT9001
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FQD5P20TM FQD5P20TM ONSEMI FQD5P20.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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500+0.48 EUR
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BAT54S ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
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MC74HC390ADR2G MC74HC390ADR2G ONSEMI MC74HC390A-D.pdf Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
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MC74HC390ADTR2G ONSEMI MC74HC390A-D.pdf Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74ACT161DG MC74ACT161DG ONSEMI MC74AC161-D.pdf Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 9
Kind of package: tube
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73+0.97 EUR
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Number of channels: 6
Power dissipation: 14.5W
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPM5H-023
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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MMSZ5248CT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxC
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SZMMSZ5248ET1G MMSZ52xxET1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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RS1J RS1x.pdf
RS1J
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
323+0.22 EUR
410+0.17 EUR
486+0.14 EUR
Mindestbestellmenge: 228
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RS1JFA rs1afa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RS1JFP rs1mfp-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVHPRS1JFA rs1afa-d.pdf
NRVHPRS1JFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU KSD880.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
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FGH40T120SMD FGH40T120SMD.pdf
FGH40T120SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 188 Stücke:
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Anzahl Preis
8+10.02 EUR
10+8.64 EUR
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FGY60T120SQDN fgy60t120sqdn-d.pdf
FGY60T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
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Anzahl Preis
6+12.1 EUR
7+11.53 EUR
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FGY75T120SQDN fgy75t120sqdn-d.pdf
FGY75T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
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Anzahl Preis
6+11.95 EUR
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FGH40T120SMD-F155 FGH40T120SMD.pdf
FGH40T120SMD-F155
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.89 EUR
Mindestbestellmenge: 6
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FQPF3N80C FQPF3N80C.pdf
FQPF3N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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FQP3N80C FAIRS47784-1.pdf?t.download=true&u=5oefqw fqpf3n80c-d.pdf
FQP3N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 107W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC847BTT1G bc847att1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Produkt ist nicht verfügbar
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2SB1201S-TL-E 2sb1201-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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MC14027BDR2G mc14027b-d.pdf
MC14027BDR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: JK flip-flop
Type of integrated circuit: digital
Number of channels: 2
Trigger: negative-edge-triggered
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
154+0.47 EUR
171+0.42 EUR
197+0.36 EUR
216+0.33 EUR
234+0.31 EUR
250+0.29 EUR
256+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAG nvljws022n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Case: WDFNW6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
On-state resistance: 21mΩ
Power dissipation: 14W
Drain current: 25A
Pulsed drain current: 90A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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KSA1013YTA KSA1013.pdf
KSA1013YTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
auf Bestellung 3522 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
171+0.42 EUR
295+0.24 EUR
353+0.2 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
KSA1013YBU KSA1013.pdf
KSA1013YBU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
auf Bestellung 5878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
125+0.57 EUR
146+0.49 EUR
247+0.29 EUR
500+0.23 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
DTC144TET1G dtc144t-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C12-T50R BZX85C.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5380BG 1N53xx.PDF
1N5380BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
311+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
1N5380BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC7918CTG MC7900-D.PDF
MC7918CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2409 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
146+0.49 EUR
183+0.39 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
BC638TA BC638.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC638TA BC638.pdf
BC638TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
293+0.24 EUR
505+0.14 EUR
727+0.098 EUR
1000+0.086 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MC33079DR2G MC33079PG.PDF
MC33079DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Input offset voltage: 3.5mV
Slew rate: 7V/μs
auf Bestellung 3686 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
268+0.27 EUR
295+0.24 EUR
341+0.21 EUR
363+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MC33074DR2G MC3x07x.PDF
MC33074DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
122+0.59 EUR
160+0.45 EUR
163+0.44 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
MC33035DWR2G mc33035-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 10...30V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC33074ADR2G mc34071-d.pdf
MC33074ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074ADTBR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074DTBR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MJH11022G MJH11017G.PDF
MJH11022G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.66 EUR
16+4.6 EUR
17+4.23 EUR
21+3.49 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
MJH11020G MJH11017G.PDF
MJH11020G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.28 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJH11021G MJH11017G.PDF
MJH11021G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.35 EUR
15+4.92 EUR
17+4.39 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
74AC04SC 74AC04SC.pdf
74AC04SC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
176+0.41 EUR
204+0.35 EUR
225+0.32 EUR
240+0.3 EUR
275+0.28 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT74M MM74HCT74M.pdf
MM74HCT74M
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: HCT
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
133+0.54 EUR
Mindestbestellmenge: 133
Im Einkaufswagen  Stück im Wert von  UAH
FCD380N60E fcd380n60e-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60 fcpf380n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTD280N60S5Z ntd280n60s5z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAV70LT3G bav70lt1-d.pdf
BAV70LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Produkt ist nicht verfügbar
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MC33151DG MC33151_MC34151.PDF
MC33151DG
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
66+1.09 EUR
72+1 EUR
Mindestbestellmenge: 49
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MC33151PG description MC33151_MC34151.PDF
MC33151PG
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of output: inverting
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
65+1.12 EUR
Mindestbestellmenge: 54
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MC33151DR2G MC33151_MC34151.PDF
MC33151DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Protection: undervoltage UVP
Kind of output: inverting
Produkt ist nicht verfügbar
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MC34151DG description MC34151DG.PDF
MC34151DG
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Output voltage: 0.8...11.2V
Kind of package: tube
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1N5404RLG 1N540x.PDF
1N5404RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; Ifsm: 200A; DO27
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: reel; tape
auf Bestellung 1127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
371+0.19 EUR
432+0.17 EUR
468+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 186
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MOCD223M description MOCD223M.pdf
MOCD223M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.34 EUR
Mindestbestellmenge: 53
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MBRB20200CTT4G MBRB20200CTG.PDF
MBRB20200CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MCT9001 MCT9001.pdf
MCT9001
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Case: DIP8
Mounting: THT
Kind of output: transistor
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
auf Bestellung 892 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
105+0.68 EUR
136+0.53 EUR
171+0.42 EUR
211+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 81
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MCT9001SD mct9001-d.pdf
MCT9001SD
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Case: PDIP8
Mounting: SMD
Kind of output: transistor
Type of optocoupler: optocoupler
Turn-on time: 3µs
Turn-off time: 3µs
Number of channels: 2
Max. off-state voltage: 5V
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Insulation voltage: 5kV
Manufacturer series: MCT9001
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
93+0.77 EUR
116+0.62 EUR
Mindestbestellmenge: 65
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FQD5P20TM FQD5P20.pdf
FQD5P20TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
136+0.53 EUR
146+0.49 EUR
500+0.48 EUR
Mindestbestellmenge: 99
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BAT54S bat54x-f.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
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MC74HC390ADR2G MC74HC390A-D.pdf
MC74HC390ADR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74HC390ADTR2G MC74HC390A-D.pdf
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; TSSOP16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74ACT161DG MC74AC161-D.pdf
MC74ACT161DG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 9
Kind of package: tube
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.97 EUR
Mindestbestellmenge: 73
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