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MMBFJ201 MMBFJ201 ONSEMI MMBFJ201_MMBFJ202.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 200µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 2470 Stücke:
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162+0.44 EUR
204+0.35 EUR
274+0.26 EUR
313+0.23 EUR
353+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 162
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CAT24C04HU4I-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQD2N90TM FQD2N90TM ONSEMI fqu2n90tu_am002-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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FQU2N90TU-AM002 ONSEMI FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FQU2N90TU-WS ONSEMI fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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NCP431ACSNT1G NCP431ACSNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
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FCPF11N60 FCPF11N60 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDB48224E3FE28&compId=FCP11N60.pdf?ci_sign=034f7a2d265f3c4ecad582e5b6722a28d02a6d8e description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 65 Stücke:
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30+2.46 EUR
36+2.02 EUR
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FCPF11N60F FCPF11N60F ONSEMI fcpf11n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
auf Bestellung 48 Stücke:
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16+4.56 EUR
24+3.02 EUR
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FCPF11N60T FCPF11N60T ONSEMI fcpf11n60t-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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FDD6637 FDD6637 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE7F191DCDBE28&compId=FDD6637.pdf?ci_sign=d0f88e0396ba7c4537cdcb6466484af1c291a595 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
auf Bestellung 2544 Stücke:
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39+1.86 EUR
44+1.63 EUR
49+1.49 EUR
62+1.16 EUR
100+1.07 EUR
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MM74HC86M MM74HC86M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDBC3A2DEF6745&compId=MM74HC86.pdf?ci_sign=e6e8b057652d7271015b69543f58f7b233323693 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MJH11020G MJH11020G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.69 EUR
16+4.48 EUR
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MJH11021G MJH11021G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 22 Stücke:
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16+4.49 EUR
17+4.39 EUR
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MJH11022G MJH11022G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Produkt ist nicht verfügbar
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MJD127T4G MJD127T4G ONSEMI mjd122.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
82+0.88 EUR
96+0.75 EUR
119+0.6 EUR
138+0.52 EUR
200+0.45 EUR
500+0.43 EUR
Mindestbestellmenge: 60
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BZX85C10 BZX85C10 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
582+0.12 EUR
695+0.1 EUR
1107+0.065 EUR
1316+0.054 EUR
1429+0.05 EUR
Mindestbestellmenge: 455
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BZX85C15 BZX85C15 ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 4787 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
582+0.12 EUR
723+0.099 EUR
857+0.084 EUR
1009+0.071 EUR
1238+0.058 EUR
1421+0.05 EUR
1608+0.044 EUR
Mindestbestellmenge: 417
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BZX85C16 BZX85C16 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE15CDCCE4C0D8&compId=BZX85C.PDF?ci_sign=87905373aa210dcc23b1b92ad515bef6e29cc18e Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Produkt ist nicht verfügbar
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MMBTA06LT1G MMBTA06LT1G ONSEMI pVersion=0046&contRep=ZT&docId=E1C052121529EAF1A6F5005056AB5A8F&compId=mmbta05.pdf?ci_sign=b895910f566e550c18f0d2ef62c925a0321e5016 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 868 Stücke:
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556+0.13 EUR
770+0.093 EUR
868+0.083 EUR
Mindestbestellmenge: 556
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MM74HC32MX MM74HC32MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA2D820&compId=MM74HC32-D.pdf?ci_sign=ecd9de9b86ca7241fa36791c9e960bc1cdcdd7e4 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC32MTCX MM74HC32MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA2D820&compId=MM74HC32-D.pdf?ci_sign=ecd9de9b86ca7241fa36791c9e960bc1cdcdd7e4 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC86MX MM74HC86MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA93820&compId=MM74HC86-D.pdf?ci_sign=19ce9a2c10bf48fc82288ed48ae7aee40dc660b3 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC86MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63439BD5720D3&compId=MM74HC86-D.pdf?ci_sign=d179aa7f6be2073fd3d60ba07ecd90b8c71dd4f5 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC132MX MM74HC132MX ONSEMI MM74HC132-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
Produkt ist nicht verfügbar
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MM74HC132MTCX MM74HC132MTCX ONSEMI MM74HC132-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
Produkt ist nicht verfügbar
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MMBD1503A MMBD1503A ONSEMI MMBD1501A.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: double series
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
353+0.2 EUR
496+0.14 EUR
579+0.12 EUR
827+0.087 EUR
1000+0.074 EUR
1500+0.073 EUR
Mindestbestellmenge: 250
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MMBT2484LT1G MMBT2484LT1G ONSEMI mmbt2484lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
269+0.27 EUR
Mindestbestellmenge: 269
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LM317LZG LM317LZG ONSEMI LM317L_NCV317L.PDF Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
247+0.29 EUR
278+0.26 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 200
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LM317LZRAG LM317LZRAG ONSEMI pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCABD070943C7440CE&compId=LM317L_NCV317L.PDF?ci_sign=4ff4b3253c954d878c959a39e31ee50c32badad1 Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Produkt ist nicht verfügbar
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MUR1640CTG MUR1640CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 60ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
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FSB560A FSB560A ONSEMI FSB560A-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
Produkt ist nicht verfügbar
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QSD2030 QSD2030 ONSEMI QSD2030-D.PDF Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
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161+0.45 EUR
182+0.39 EUR
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LM258DR2G LM258DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -25...85°C
Slew rate: 0.6V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
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FQA140N10 FQA140N10 ONSEMI fqa140n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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NCP1075STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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NCP1075STBT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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6N139M 6N139M ONSEMI 6N139M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N139M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
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80+0.89 EUR
94+0.76 EUR
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FQP27P06 FQP27P06 ONSEMI pVersion=0046&contRep=ZT&docId=E20E0BA06562B5F1A303005056AB0C4F&compId=FQP27P06.pdf?ci_sign=2ed558b67ec056b733e490276427ca921640cfb6 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
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48+1.52 EUR
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1N5335BRLG 1N5335BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
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240+0.3 EUR
281+0.25 EUR
302+0.24 EUR
332+0.22 EUR
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1N5337BRLG 1N5337BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
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143+0.5 EUR
174+0.41 EUR
197+0.36 EUR
305+0.23 EUR
500+0.22 EUR
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1N5337BG 1N5337BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 1240 Stücke:
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230+0.31 EUR
254+0.28 EUR
321+0.22 EUR
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1N5341BRLG 1N5341BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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137+0.52 EUR
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1N5341BG 1N5341BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 1µA
auf Bestellung 483 Stücke:
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180+0.4 EUR
199+0.36 EUR
290+0.25 EUR
336+0.21 EUR
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TIP32AG TIP32AG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 137 Stücke:
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73+0.98 EUR
132+0.54 EUR
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TIP32BG TIP32BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
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TIP32CG TIP32CG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 387 Stücke:
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88+0.82 EUR
166+0.43 EUR
220+0.33 EUR
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TIP32G TIP32G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
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FMB2907A ONSEMI mmpq2907a-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23-6
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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MC7805BDTG MC7805BDTG ONSEMI MC78xx.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
auf Bestellung 1671 Stücke:
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105+0.69 EUR
114+0.63 EUR
180+0.4 EUR
265+0.27 EUR
350+0.2 EUR
525+0.19 EUR
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MC7805BDTRKG MC7805BDTRKG ONSEMI MC78xx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
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MC74HC161ADG MC74HC161ADG ONSEMI MC74HC161A-D.pdf Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Manufacturer series: HC
Number of channels: 1
Number of inputs: 9
auf Bestellung 98 Stücke:
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98+0.73 EUR
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TIP120G TIP120G ONSEMI TIP12xG.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 561 Stücke:
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146+0.49 EUR
168+0.43 EUR
180+0.4 EUR
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MC78L05ACHT1G MC78L05ACHT1G ONSEMI MC78LxxA_NCV78LxxA.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SOT89; SMD; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
auf Bestellung 1898 Stücke:
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246+0.29 EUR
277+0.26 EUR
321+0.22 EUR
388+0.18 EUR
421+0.17 EUR
500+0.16 EUR
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MJE350G MJE350G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9D6244A5496143&compId=MJE350G.pdf?ci_sign=ceecdaf803505ecf20ef449e5ce0e923b91b36c9 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
auf Bestellung 432 Stücke:
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76+0.94 EUR
106+0.68 EUR
200+0.61 EUR
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FQB4N80TM ONSEMI fqi4n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQI4N80TU ONSEMI FAIRS46000-1.pdf?t.download=true&u=5oefqw fqi4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQP4N80 FQP4N80 ONSEMI fqp4n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
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7+10.21 EUR
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FQB5N90TM FQB5N90TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
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31+2.37 EUR
33+2.19 EUR
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CAT24C02TDI-GT3A CAT24C02TDI-GT3A ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
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FQD4N25TM-WS FQD4N25TM-WS ONSEMI fqd4n25-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Pulsed drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 250V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 1.75Ω
Drain current: 1.9A
Produkt ist nicht verfügbar
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MMBFJ201 MMBFJ201_MMBFJ202.pdf
MMBFJ201
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 200µA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -40V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 2470 Stücke:
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Anzahl Preis
162+0.44 EUR
204+0.35 EUR
274+0.26 EUR
313+0.23 EUR
353+0.2 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 162
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CAT24C04HU4I-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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FQU2N90TU-AM002 FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FQU2N90TU-WS fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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NCP431ACSNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0
NCP431ACSNT1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
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FCPF11N60 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDB48224E3FE28&compId=FCP11N60.pdf?ci_sign=034f7a2d265f3c4ecad582e5b6722a28d02a6d8e
FCPF11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
36+2.02 EUR
Mindestbestellmenge: 30
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FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
24+3.02 EUR
Mindestbestellmenge: 16
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FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
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FDD6637 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE7F191DCDBE28&compId=FDD6637.pdf?ci_sign=d0f88e0396ba7c4537cdcb6466484af1c291a595
FDD6637
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
auf Bestellung 2544 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.86 EUR
44+1.63 EUR
49+1.49 EUR
62+1.16 EUR
100+1.07 EUR
Mindestbestellmenge: 39
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MM74HC86M pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDBC3A2DEF6745&compId=MM74HC86.pdf?ci_sign=e6e8b057652d7271015b69543f58f7b233323693
MM74HC86M
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MJH11020G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98
MJH11020G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.69 EUR
16+4.48 EUR
Mindestbestellmenge: 13
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MJH11021G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98
MJH11021G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
17+4.39 EUR
Mindestbestellmenge: 16
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MJH11022G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD137CF80B00469&compId=MJH11017G.PDF?ci_sign=3efe45594b0b8c8fbf78869176663551b00edf98
MJH11022G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Produkt ist nicht verfügbar
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MJD127T4G mjd122.pdf
MJD127T4G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
auf Bestellung 1418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
82+0.88 EUR
96+0.75 EUR
119+0.6 EUR
138+0.52 EUR
200+0.45 EUR
500+0.43 EUR
Mindestbestellmenge: 60
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BZX85C10 BZX85C.PDF
BZX85C10
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 2770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
582+0.12 EUR
695+0.1 EUR
1107+0.065 EUR
1316+0.054 EUR
1429+0.05 EUR
Mindestbestellmenge: 455
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BZX85C15 BZX85C.PDF
BZX85C15
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 4787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
582+0.12 EUR
723+0.099 EUR
857+0.084 EUR
1009+0.071 EUR
1238+0.058 EUR
1421+0.05 EUR
1608+0.044 EUR
Mindestbestellmenge: 417
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BZX85C16 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE15CDCCE4C0D8&compId=BZX85C.PDF?ci_sign=87905373aa210dcc23b1b92ad515bef6e29cc18e
BZX85C16
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Produkt ist nicht verfügbar
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MMBTA06LT1G pVersion=0046&contRep=ZT&docId=E1C052121529EAF1A6F5005056AB5A8F&compId=mmbta05.pdf?ci_sign=b895910f566e550c18f0d2ef62c925a0321e5016
MMBTA06LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 868 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
770+0.093 EUR
868+0.083 EUR
Mindestbestellmenge: 556
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MM74HC32MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA2D820&compId=MM74HC32-D.pdf?ci_sign=ecd9de9b86ca7241fa36791c9e960bc1cdcdd7e4
MM74HC32MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC32MTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA2D820&compId=MM74HC32-D.pdf?ci_sign=ecd9de9b86ca7241fa36791c9e960bc1cdcdd7e4
MM74HC32MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Family: HC
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 10ns
Number of inputs: 2
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC86MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9FA93820&compId=MM74HC86-D.pdf?ci_sign=19ce9a2c10bf48fc82288ed48ae7aee40dc660b3
MM74HC86MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC86MTCX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63439BD5720D3&compId=MM74HC86-D.pdf?ci_sign=d179aa7f6be2073fd3d60ba07ecd90b8c71dd4f5
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
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MM74HC132MX MM74HC132-D.pdf
MM74HC132MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: SO14
Produkt ist nicht verfügbar
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MM74HC132MTCX MM74HC132-D.pdf
MM74HC132MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Supply voltage: 2...6V DC
Technology: CMOS
Case: TSSOP14
Produkt ist nicht verfügbar
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MMBD1503A MMBD1501A.pdf
MMBD1503A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: double series
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
353+0.2 EUR
496+0.14 EUR
579+0.12 EUR
827+0.087 EUR
1000+0.074 EUR
1500+0.073 EUR
Mindestbestellmenge: 250
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MMBT2484LT1G mmbt2484lt1-d.pdf
MMBT2484LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
269+0.27 EUR
Mindestbestellmenge: 269
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LM317LZG LM317L_NCV317L.PDF
LM317LZG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
247+0.29 EUR
278+0.26 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 200
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LM317LZRAG pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCABD070943C7440CE&compId=LM317L_NCV317L.PDF?ci_sign=4ff4b3253c954d878c959a39e31ee50c32badad1
LM317LZRAG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LM317L
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Produkt ist nicht verfügbar
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MUR1640CTG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b
MUR1640CTG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 16A
Reverse recovery time: 60ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
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FSB560A FSB560A-D.PDF
FSB560A
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
Produkt ist nicht verfügbar
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QSD2030 QSD2030-D.PDF
QSD2030
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Operating voltage: 1.3V
Viewing angle: 40°
LED lens: transparent
Front: convex
Mounting: THT
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
161+0.45 EUR
182+0.39 EUR
216+0.33 EUR
250+0.3 EUR
Mindestbestellmenge: 114
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LM258DR2G description lm358-d.pdf
LM258DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -25...85°C
Slew rate: 0.6V/μs
Input offset voltage: 2mV
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.92 EUR
12+6.08 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NCP1075STAT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1075STBT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
6N139M 6N139M.pdf
6N139M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N139M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
80+0.89 EUR
94+0.76 EUR
101+0.71 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
FQP27P06 pVersion=0046&contRep=ZT&docId=E20E0BA06562B5F1A303005056AB0C4F&compId=FQP27P06.pdf?ci_sign=2ed558b67ec056b733e490276427ca921640cfb6
FQP27P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
48+1.52 EUR
50+1.44 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
1N5335BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5335BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
auf Bestellung 1824 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
240+0.3 EUR
281+0.25 EUR
302+0.24 EUR
332+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1N5337BRLG description 1N53xx.PDF
1N5337BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 4074 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
174+0.41 EUR
197+0.36 EUR
305+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
1N5337BG 1N53xx.PDF
1N5337BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
230+0.31 EUR
254+0.28 EUR
321+0.22 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
1N5341BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5341BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
137+0.52 EUR
153+0.47 EUR
240+0.3 EUR
248+0.29 EUR
254+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
1N5341BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5341BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 1µA
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
180+0.4 EUR
199+0.36 EUR
290+0.25 EUR
336+0.21 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
TIP32AG pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d
TIP32AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
73+0.98 EUR
132+0.54 EUR
137+0.51 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
TIP32BG pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d
TIP32BG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP32CG pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d
TIP32CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
88+0.82 EUR
166+0.43 EUR
220+0.33 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
TIP32G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A65A424764745&compId=TIP3xx.PDF?ci_sign=3cddb36a2bada97e5a9d5a87156464b58ab3b52d
TIP32G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMB2907A mmpq2907a-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.7W; TSOT23-6
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC7805BDTG MC78xx.pdf
MC7805BDTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Manufacturer series: MC7800
auf Bestellung 1671 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
114+0.63 EUR
180+0.4 EUR
265+0.27 EUR
350+0.2 EUR
525+0.19 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
MC7805BDTRKG MC78xx.pdf
MC7805BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; MC7800; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 8...20V
Produkt ist nicht verfügbar
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MC74HC161ADG MC74HC161A-D.pdf
MC74HC161ADG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Manufacturer series: HC
Number of channels: 1
Number of inputs: 9
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
98+0.73 EUR
Mindestbestellmenge: 98
Im Einkaufswagen  Stück im Wert von  UAH
TIP120G TIP12xG.PDF
TIP120G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
146+0.49 EUR
168+0.43 EUR
180+0.4 EUR
250+0.39 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
MC78L05ACHT1G MC78LxxA_NCV78LxxA.PDF
MC78L05ACHT1G
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; SOT89; SMD; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78L00A
auf Bestellung 1898 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
246+0.29 EUR
277+0.26 EUR
321+0.22 EUR
388+0.18 EUR
421+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 193
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MJE350G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9D6244A5496143&compId=MJE350G.pdf?ci_sign=ceecdaf803505ecf20ef449e5ce0e923b91b36c9
MJE350G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
76+0.94 EUR
106+0.68 EUR
200+0.61 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
FQB4N80TM fqi4n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQI4N80TU FAIRS46000-1.pdf?t.download=true&u=5oefqw fqi4n80-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQP4N80 fqp4n80-d.pdf
FQP4N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
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FQB5N90TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415
FQB5N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
33+2.19 EUR
Mindestbestellmenge: 31
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CAT24C02TDI-GT3A cat24c01-d.pdf
CAT24C02TDI-GT3A
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
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FQD4N25TM-WS fqd4n25-d.pdf
FQD4N25TM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Pulsed drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 250V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 1.75Ω
Drain current: 1.9A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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