MMBT5401 Yangjie
Produktcode: 160586
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Lieblingsprodukt
Hersteller: Yangjie
Gehäuse: SOT-23
Grenzfrequenz fT, MHz: 300 MHz
Spannung Uce, V: 160 V
Spannung Ucb, V: 180 V
Strom Ic, A: 0,6 A
Stromverstärkung h21, max: 300
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote MMBT5401 nach Preis ab 0.018 EUR bis 100.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MMBT5401 | Diotec Semiconductor |
Description: TRANS PNP 150V 0.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 250 mW |
auf Bestellung 53621 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | DIOTEC SEMICONDUCTOR |
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, OberflächenmontagetariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Dauerkollektorstrom: 600mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 150V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 300MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2539 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMBT5401 | HT Jinyu Semiconductor |
Transistor (PNP) |
auf Bestellung 141279000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5401 | MDD(Microdiode Electronics) |
Transistor PNP; 300; 300mW, 160V; 600mA; 100MHz, -55°C ~ 150°C; MMBT5401-LGE; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 SOT23 MDD(MICRODIODE) TMMBT5401 MDDAnzahl je Verpackung: 500 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBT5401 | YY |
Transistor PNP; Bipolar; 160V; 6V; 300MHz; 600mA; 300mW; 300; -55°C~150°C; MMBT5401-YAN; MMBT5401 TMMBT5401 YYAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBT5401 | YFW |
Transistor PNP; Bipolar; 300; -150V; -5V; 100MHz; -600mA; 350mW; -55°C~150°C; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 TMMBT5401 cAnzahl je Verpackung: 500 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBT5401 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TRANS PNP 150V 0.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | EVVO |
Description: TRANS PNP 150V 0.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 300 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | Diotec Semiconductor |
Description: TRANS PNP 150V 0.6A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 250 mW |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | Diotec Semiconductor |
Trans GP BJT PNP 150V 0.6A 250mW 3-Pin SOT-23 T/R |
auf Bestellung 62279 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5401 | DIOTEC |
PNP 500mA 150V 225mW 300MHz MMBT5401 smd TMMBT5401Anzahl je Verpackung: 3000 Stücke |
auf Bestellung 1900 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBT5401 | ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5401 | ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R |
auf Bestellung 12034 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5401 | onsemi |
Description: TRANS PNP 150V 0.6A SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
auf Bestellung 12034 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | DIOTEC SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.6A; 250mW; SOT23 Mounting: SMD Kind of package: reel; tape Case: SOT23 Polarisation: bipolar Type of transistor: PNP Collector current: 0.6A Power dissipation: 0.25W Current gain: 50...240 Collector-emitter voltage: 150V Frequency: 100...300MHz |
auf Bestellung 61779 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5401 | MDD |
Description: TRANS PNP 160V 0.6A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 0.1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 300 mW |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 150V 225MW 60@10MA,5V 500MA PNPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 225 mW |
auf Bestellung 3267 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | Diotec Semiconductor |
Bipolar Transistors - BJT BJT, SOT-23, 150V, 600mA, PNP |
auf Bestellung 13485 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: TRANS PNP 150V 0.6A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW |
auf Bestellung 2923 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | Rectron |
Bipolar Transistors - BJT SOT23 PNP 0.5A 150V HighVolt |
auf Bestellung 11538 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | HY Electronic (Cayman) Limited |
Description: TRANS NPN 150V 0.6A SOT-23Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 300 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401 | DIOTEC SEMICONDUCTOR |
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, OberflächenmontagetariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2539 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMBT5401 | Microdiode Electronics (MDD) |
MMBT5401 |
auf Bestellung 3372000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMBT5401 | FOSAN |
PNP, Uкэ=150V, Iк=0.6A, 0.35Вт, 100МГц, SOT-23 (SMD) Транзистори |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MMBT5401 |
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Hersteller: Diotec Semiconductor
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
auf Bestellung 53621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 137+ | 0.15 EUR |
| 224+ | 0.094 EUR |
| 500+ | 0.068 EUR |
| 1000+ | 0.06 EUR |
| MMBT5401 |
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Hersteller: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250mW
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 600mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 150V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 60hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250mW
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 600mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 150V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 300MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2539 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBT5401 |
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Hersteller: HT Jinyu Semiconductor
Transistor (PNP)
Transistor (PNP)
auf Bestellung 141279000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7093+ | 0.025 EUR |
| 60000+ | 0.021 EUR |
| 300000+ | 0.018 EUR |
| MMBT5401 |
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Hersteller: MDD(Microdiode Electronics)
Transistor PNP; 300; 300mW, 160V; 600mA; 100MHz, -55°C ~ 150°C; MMBT5401-LGE; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 SOT23 MDD(MICRODIODE) TMMBT5401 MDD
Anzahl je Verpackung: 500 Stücke
Transistor PNP; 300; 300mW, 160V; 600mA; 100MHz, -55°C ~ 150°C; MMBT5401-LGE; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 SOT23 MDD(MICRODIODE) TMMBT5401 MDD
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.03 EUR |
| MMBT5401 |
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Hersteller: YY
Transistor PNP; Bipolar; 160V; 6V; 300MHz; 600mA; 300mW; 300; -55°C~150°C; MMBT5401-YAN; MMBT5401 TMMBT5401 YY
Anzahl je Verpackung: 500 Stücke
Transistor PNP; Bipolar; 160V; 6V; 300MHz; 600mA; 300mW; 300; -55°C~150°C; MMBT5401-YAN; MMBT5401 TMMBT5401 YY
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.036 EUR |
| MMBT5401 |
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Hersteller: YFW
Transistor PNP; Bipolar; 300; -150V; -5V; 100MHz; -600mA; 350mW; -55°C~150°C; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 TMMBT5401 c
Anzahl je Verpackung: 500 Stücke
Transistor PNP; Bipolar; 300; -150V; -5V; 100MHz; -600mA; 350mW; -55°C~150°C; MMBT5401-AU_R1_000A1; MMBT5401-YAN; MMBT5401-LGE; MMBT5401 TMMBT5401 c
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.043 EUR |
| MMBT5401 |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.043 EUR |
| 6000+ | 0.038 EUR |
| 9000+ | 0.036 EUR |
| 15000+ | 0.032 EUR |
| MMBT5401 |
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Hersteller: EVVO
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.044 EUR |
| MMBT5401 |
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Hersteller: Diotec Semiconductor
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.049 EUR |
| 6000+ | 0.043 EUR |
| 9000+ | 0.04 EUR |
| 15000+ | 0.037 EUR |
| 21000+ | 0.036 EUR |
| 30000+ | 0.033 EUR |
| MMBT5401 |
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Hersteller: Diotec Semiconductor
Trans GP BJT PNP 150V 0.6A 250mW 3-Pin SOT-23 T/R
Trans GP BJT PNP 150V 0.6A 250mW 3-Pin SOT-23 T/R
auf Bestellung 62279 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3068+ | 0.057 EUR |
| 3788+ | 0.045 EUR |
| 6000+ | 0.039 EUR |
| 9000+ | 0.036 EUR |
| 21000+ | 0.031 EUR |
| 30000+ | 0.03 EUR |
| MMBT5401 |
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Hersteller: DIOTEC
PNP 500mA 150V 225mW 300MHz MMBT5401 smd TMMBT5401
Anzahl je Verpackung: 3000 Stücke
PNP 500mA 150V 225mW 300MHz MMBT5401 smd TMMBT5401
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 1900 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.061 EUR |
| MMBT5401 |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9091+ | 0.073 EUR |
| MMBT5401 |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
auf Bestellung 12034 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9091+ | 0.073 EUR |
| 10205+ | 0.064 EUR |
| MMBT5401 |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
auf Bestellung 12034 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6045+ | 0.089 EUR |
| MMBT5401 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 250mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.6A
Power dissipation: 0.25W
Current gain: 50...240
Collector-emitter voltage: 150V
Frequency: 100...300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 250mW; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.6A
Power dissipation: 0.25W
Current gain: 50...240
Collector-emitter voltage: 150V
Frequency: 100...300MHz
auf Bestellung 61779 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 910+ | 0.094 EUR |
| 1511+ | 0.056 EUR |
| 2243+ | 0.038 EUR |
| 2552+ | 0.033 EUR |
| 3049+ | 0.027 EUR |
| 6000+ | 0.025 EUR |
| 9000+ | 0.024 EUR |
| 21000+ | 0.021 EUR |
| MMBT5401 |
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Hersteller: MDD
Description: TRANS PNP 160V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 0.1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Description: TRANS PNP 160V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 0.1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12000+ | 0.12 EUR |
| MMBT5401 |
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Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 150V 225MW 60@10MA,5V 500MA PNP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
Description: 150V 225MW 60@10MA,5V 500MA PNP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
auf Bestellung 3267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.17 EUR |
| 304+ | 0.069 EUR |
| 491+ | 0.043 EUR |
| 688+ | 0.031 EUR |
| 1000+ | 0.026 EUR |
| MMBT5401 |
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Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, SOT-23, 150V, 600mA, PNP
Bipolar Transistors - BJT BJT, SOT-23, 150V, 600mA, PNP
auf Bestellung 13485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 0.2 EUR |
| 25+ | 0.14 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.082 EUR |
| 3000+ | 0.061 EUR |
| 9000+ | 0.039 EUR |
| MMBT5401 |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Description: TRANS PNP 150V 0.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
auf Bestellung 2923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.21 EUR |
| 154+ | 0.13 EUR |
| 251+ | 0.083 EUR |
| 500+ | 0.061 EUR |
| 1000+ | 0.052 EUR |
| MMBT5401 |
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Hersteller: Rectron
Bipolar Transistors - BJT SOT23 PNP 0.5A 150V HighVolt
Bipolar Transistors - BJT SOT23 PNP 0.5A 150V HighVolt
auf Bestellung 11538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.086 EUR |
| MMBT5401 |
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Hersteller: HY Electronic (Cayman) Limited
Description: TRANS NPN 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
Description: TRANS NPN 150V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 100.39 EUR |
| 100+ | 83.66 EUR |
| 1000+ | 66.93 EUR |
| MMBT5401 |
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Hersteller: DIOTEC SEMICONDUCTOR
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: DIOTEC SEMICONDUCTOR - MMBT5401 - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 600 mA, 250 mW, SOT-23, Oberflächenmontage
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2539 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBT5401 |
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Hersteller: Microdiode Electronics (MDD)
MMBT5401
MMBT5401
auf Bestellung 3372000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9000+ | 0.029 EUR |
| 1686000+ | 0.026 EUR |
| 2529000+ | 0.024 EUR |
| 3372000+ | 0.021 EUR |
| MMBT5401 |
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Hersteller: FOSAN
PNP, Uкэ=150V, Iк=0.6A, 0.35Вт, 100МГц, SOT-23 (SMD) Транзистори
PNP, Uкэ=150V, Iк=0.6A, 0.35Вт, 100МГц, SOT-23 (SMD) Транзистори
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.12 EUR |
Mit diesem Produkt kaufen
| MMBT5551 Produktcode: 200829
2
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: Jingdao
Transistoren > Bipolar-Transistoren NPN
Gehäuse: SOT-23
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
h21: 250
Montage: SMD
Transistoren > Bipolar-Transistoren NPN
Gehäuse: SOT-23
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
h21: 250
Montage: SMD
auf Bestellung 2219 St.:
Lieferzeit 21-28 Tag (e)
| IRFZ44NPBF Produktcode: 35403
7
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Idd, A: 49 A
Durchlasswiderstand Rds(on), Ohm: 0,024 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1470/63
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Idd, A: 49 A
Durchlasswiderstand Rds(on), Ohm: 0,024 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1470/63
Montage: THT
verfügbar: 1510 St.
- 25 St. - stock Köln
- 1485 St. - lieferbar in 3-4 Wochen
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.38 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.32 EUR |
| 220uF 35V EXR 10x16mm (low imp.) (EXR221M35B-Hitano) (Elektrolytkondensator, niedrige Impedanz) Produktcode: 2427
2
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Lieblingsprodukt
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Hersteller: Hitano
Kondensatoren > Kondensatoren elektrolytische THT
Kapazität: 220 µF
Nennspannung: 35 V
Reihe: EXR
Typ: niedrige Impedanz
Temperaturbereich: -40...+105°C
Abmessungen: 10x16 mm
Lebensdauer: 5000 Stunden
Zolltarifnummer: 8532 22 00 00
Kondensatoren > Kondensatoren elektrolytische THT
Kapazität: 220 µF
Nennspannung: 35 V
Reihe: EXR
Typ: niedrige Impedanz
Temperaturbereich: -40...+105°C
Abmessungen: 10x16 mm
Lebensdauer: 5000 Stunden
Zolltarifnummer: 8532 22 00 00
verfügbar: 490 St.
erwartet: 4000 St.
- 4000 St. - erwartet
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.19 EUR |
| 10+ | 0.14 EUR |
| 100+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| L7805CV Produktcode: 24792
7
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Lieblingsprodukt
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Hersteller: ST
IC > IC lineare Spannungsregler
Gehäuse: TO-220
Eingangsspannung Uin, V: 35 V
Ausgangsspannung Uout, V: 5 V
Ausgangsstrom Iout, A: 1,5 A
Spannungsabfall Udrop, V: 1,7 V
Ausgangstyp: Fest
Temperaturbereich: 0...125°C
Montage: THT
IC > IC lineare Spannungsregler
Gehäuse: TO-220
Eingangsspannung Uin, V: 35 V
Ausgangsspannung Uout, V: 5 V
Ausgangsstrom Iout, A: 1,5 A
Spannungsabfall Udrop, V: 1,7 V
Ausgangstyp: Fest
Temperaturbereich: 0...125°C
Montage: THT
verfügbar: 1721 St.
- 118 St. - stock Köln
- 1603 St. - lieferbar in 3-4 Wochen
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.62 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.48 EUR |
| 1000+ | 0.15 EUR |
| IRF7416TRPBF Produktcode: 25625
2
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Id, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,02 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1700/61
Montage: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Id, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 0,02 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1700/61
Montage: SMD
verfügbar: 28 St.
- 15 St. - stock Köln
- 13 St. - lieferbar in 3-4 Wochen
erwartet: 8 St.
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.45 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.37 EUR |

















