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| NTP110N65S3HF | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
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| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 62nC Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 161W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 131nC On-state resistance: 1.5mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 312A Pulsed drain current: 2055A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 147W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 272A Pulsed drain current: 2137A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Drain current: 1.2A Gate-source voltage: ±8V Kind of package: reel; tape Drain-source voltage: 20V Kind of channel: enhancement Type of transistor: N-MOSFET x2 Technology: PowerTrench® Case: SC70-6; SC88; SOT363 Mounting: SMD Polarisation: unipolar Gate charge: 2.6nC Power dissipation: 0.36W On-state resistance: 389mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCB260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.26Ω Pulsed drain current: 30A Power dissipation: 90W Gate charge: 24nC |
auf Bestellung 767 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCD260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: DPAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.26Ω Pulsed drain current: 30A Power dissipation: 90W Gate charge: 24nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTPF360N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 28A Power dissipation: 26W Gate charge: 17.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N7000 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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FQL40N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Pulsed drain current: 160A Power dissipation: 460W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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NTP165N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 53A Power dissipation: 142W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP22N50N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 316W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 90.4nC Kind of channel: enhancement On-state resistance: 4.4mΩ Drain current: 187A Pulsed drain current: 2255A Drain-source voltage: 150V Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N5388BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
auf Bestellung 3620 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Max. off-state voltage: 650V Semiconductor structure: diode/transistor Technology: SiC Application: for UPS; Inverter Type of semiconductor module: IGBT Topology: NTC thermistor; three-level inverter; single-phase Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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MC78M15CDTG | ONSEMI |
 Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 17.5...30V |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78M15CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 17.5...30V |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM2596DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Case: D2PAK-5 Kind of integrated circuit: DC/DC converter Type of integrated circuit: PMIC Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2596TVADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SS8550CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LM358DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV Type of integrated circuit: operational amplifier Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: 0...70°C Input offset voltage: 9mV Input offset current: 150nA Kind of package: reel; tape Bandwidth: 1.1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM339DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM339EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
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NGTB15N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3 Mounting: THT Pulsed collector current: 60A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 109nC Collector current: 15A Gate-emitter voltage: ±20V Power dissipation: 147W |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBC817-40WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| LM2902DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: TSSOP14 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
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| LM2902EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
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| LM2902VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...125°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
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| LM2902VDTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 200nA |
Produkt ist nicht verfügbar |
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| MC78M12ACDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCV78M12BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
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J112-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: tape Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
Produkt ist nicht verfügbar |
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J112-D27Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: tape Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
Produkt ist nicht verfügbar |
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J112-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: Ammo Pack Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NGTB40N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 170nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVH040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Gate charge: 153nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 40mΩ Drain current: 65A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM393DMR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape Mounting: SMT Operating temperature: 0...70°C Operating voltage: 2...36V Number of comparators: 2 Case: Micro8 Type of integrated circuit: comparator Kind of package: reel; tape Kind of comparator: universal Input bias current: 20nA Input offset current: 5nA Input offset voltage: 5mV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2576TV-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LM2576TV-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
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2SC5200OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 150W Case: TO264 Current gain: 80...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV78M05ABDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV78M05BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LMV321SN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Integrated circuit features: low voltage; rail-to-rail output Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: TSOP5 Number of channels: single; 1 Mounting: SMT Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LMV321SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Integrated circuit features: low voltage; rail-to-rail output Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SC70-5 Number of channels: single; 1 Mounting: SMT Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LMV321ISN3T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA Input bias current: 1nA Input offset current: 1nA Input offset voltage: 9mV Slew rate: 1V/μs Voltage supply range: 2.7...5V DC Bandwidth: 1MHz Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: TSOP5 Number of channels: single; 1 Mounting: SMT Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TIP35CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV78L08ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCP130N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 278W Pulsed drain current: 84A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LMV358IDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 2.7...5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Input offset current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2N3055AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 115W Case: TO3; TO204 Current gain: 10...70 Mounting: THT Kind of package: in-tray Frequency: 2.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCP150N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Gate charge: 72nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 0.15Ω Gate-source voltage: ±20V Drain current: 24A Pulsed drain current: 72A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NGTB50N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 208W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.22µC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
|
2N5550TAR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2N5551YBU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
2N5401YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 40...200 Mounting: THT Kind of package: bulk Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LP2951ACD-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LP2951ACDM-3.0RG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 62nC
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBLS1D5N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 161W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBLS1D7N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 147W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDG1024NZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB260N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.38 EUR |
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 100+ | 2.37 EUR |
| FCD260N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF360N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7000 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 162+ | 0.44 EUR |
| 187+ | 0.38 EUR |
| 233+ | 0.31 EUR |
| 319+ | 0.22 EUR |
| 365+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| FQL40N50F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP165N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 22+ | 3.37 EUR |
| FDP22N50N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| NTBLS4D0N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5388BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
auf Bestellung 3620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 180+ | 0.4 EUR |
| 198+ | 0.36 EUR |
| 293+ | 0.24 EUR |
| 500+ | 0.22 EUR |
| NXH450N65L4Q2F2S1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Technology: SiC
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Technology: SiC
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC78M15CDTG | |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 258+ | 0.28 EUR |
| 302+ | 0.24 EUR |
| 382+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| MC78M15CTG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| LM2596DSADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2596TVADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS8550CTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM358DMR2G | |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: reel; tape
Bandwidth: 1.1MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: reel; tape
Bandwidth: 1.1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT3906TT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBT3906TT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM339DTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM339EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; SO14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB15N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.41 EUR |
| 14+ | 5.13 EUR |
| 30+ | 4.89 EUR |
| NSVBC817-40WT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 10mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2902VDTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC78M12ACDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV78M12BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| J112-D26Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| J112-D27Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| J112-D74Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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| NGTB40N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Produkt ist nicht verfügbar
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| NVH040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM393DMR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Mounting: SMT
Operating temperature: 0...70°C
Operating voltage: 2...36V
Number of comparators: 2
Case: Micro8
Type of integrated circuit: comparator
Kind of package: reel; tape
Kind of comparator: universal
Input bias current: 20nA
Input offset current: 5nA
Input offset voltage: 5mV
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape
Mounting: SMT
Operating temperature: 0...70°C
Operating voltage: 2...36V
Number of comparators: 2
Case: Micro8
Type of integrated circuit: comparator
Kind of package: reel; tape
Kind of comparator: universal
Input bias current: 20nA
Input offset current: 5nA
Input offset voltage: 5mV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2576TV-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2576TV-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2SC5200OTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 80...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.03 EUR |
| 15+ | 4.96 EUR |
| 17+ | 4.36 EUR |
| 25+ | 4.02 EUR |
| NCV78M05ABDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV78M05BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| LMV321SN3T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...85°C
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| LMV321SQ3T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...85°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; SC70-5; 9mV
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Integrated circuit features: low voltage; rail-to-rail output
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...85°C
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| LMV321ISN3T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 1; 2.7÷5VDC; TSOP5; 9mV; IB: 1nA
Input bias current: 1nA
Input offset current: 1nA
Input offset voltage: 9mV
Slew rate: 1V/μs
Voltage supply range: 2.7...5V DC
Bandwidth: 1MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: TSOP5
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
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| TIP35CG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.7 EUR |
| 28+ | 2.6 EUR |
| 37+ | 1.96 EUR |
| NCV78L08ABDR2G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| FCP130N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 278W
Pulsed drain current: 84A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 278W
Pulsed drain current: 84A
Gate charge: 54nC
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| LMV358IDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.7...5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.7...5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Input offset current: 1nA
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| 2N3055AG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 10...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 10...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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| FCP150N65F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 0.15Ω
Gate-source voltage: ±20V
Drain current: 24A
Pulsed drain current: 72A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 0.15Ω
Gate-source voltage: ±20V
Drain current: 24A
Pulsed drain current: 72A
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| NGTB50N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 208W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 208W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
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| 2N5550TAR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
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| 2N5551YBU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
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| 2N5401YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 40...200
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
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| LP2951ACD-3.0R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LP2951ACDM-3.0RG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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