| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N5227B | ONSEMI |
Description: ONSEMI - 1N5227B - Zener-Diode, 3.6 V, 500 mW, DO-35, 2 Pin(s), 200 °C, DurchsteckmontagetariffCode: 85411000 Bauform - Diode: DO-35 rohsCompliant: Y-EX Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 2Pin(s) Produktpalette: 1N52xxB productTraceability: No Betriebstemperatur, max.: 200°C Zener-Spannung, nom.: 3.6V SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 6816 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CAT25160VI-GT3 | ONSEMI |
Description: ONSEMI - CAT25160VI-GT3 - EEPROM, 16 Kbit, 2K x 8 Bit, SPI, 10 MHz, SOIC, 8 Pin(s)tariffCode: 85423261 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y IC-Gehäuse / Bauform: SOIC Speicherdichte: 16Kbit MSL: MSL 1 - unbegrenzt usEccn: EAR99 Taktfrequenz, max.: 10MHz Betriebstemperatur, min.: -40°C Versorgungsspannung, min.: 1.8V euEccn: NLR Anzahl der Pins: 8Pin(s) Produktpalette: 16Kbit SPI Serial EEPROM productTraceability: No Versorgungsspannung, max.: 5.5V Schnittstellen: SPI Betriebstemperatur, max.: 85°C Speicherkonfiguration: 2K x 8 Bit SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC857BLT1G | ONSEMI |
Description: ONSEMI - BC857BLT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 45 V, 100 mA, 225 mW, SOT-23, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Dauerkollektorstrom: 100mA Anzahl der Pins: 3Pin(s) Produktpalette: BCxxx Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 54452 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC595ADTR2G | ONSEMI |
Description: ONSEMI - MC74HC595ADTR2G - Schieberegister, Produktreihe HC, 74HC595, Seriell zu parallel, seriell zu seriell, 1 ElementtariffCode: 85423990 Logik-IC-Sockelnummer: 74595 rohsCompliant: YES Logik-IC-Familie: 74HC Bauform - Logikbaustein: TSSOP IC-Ausgang: Tri-State Anzahl der Elemente: 1 Element Schieberegisterfunktion: Seriell zu parallel, seriell zu seriell hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N IC-Gehäuse / Bauform: TSSOP MSL: - usEccn: EAR99 Betriebstemperatur, min.: -55°C Versorgungsspannung, min.: 2V Logikfamilie / Sockelnummer: 74HC595 euEccn: NLR Anzahl der Pins: 16Pin(s) Produktpalette: - productTraceability: No Versorgungsspannung, max.: 6V Betriebstemperatur, max.: 125°C Anzahl der Bits pro Element: 8bit SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC33725TA | ONSEMI |
Description: ONSEMI - BC33725TA - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 625 mW, TO-92, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 160hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 euEccn: NLR Verlustleistung: 625mW Bauform - Transistor: TO-92 Dauerkollektorstrom: 800mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MB10S | ONSEMI |
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 VtariffCode: 85411000 Durchlassstoßstrom: 35A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Durchlassspannung, max.: 1V Bauform - Brückengleichrichter: SOIC usEccn: EAR99 Montage des Brückengleichrichters: Oberflächenmontage Anzahl der Phasen: Eine Phase Durchschnittlicher Durchlassstrom: 800mA euEccn: NLR Anzahl der Pins: 4Pin(s) Produktpalette: MB10S productTraceability: No Periodische Spitzensperrspannung: 1kV Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 9850 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MB10S | ONSEMI |
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 VtariffCode: 85411000 Durchlassstoßstrom: 35A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Durchlassspannung, max.: 1V Bauform - Brückengleichrichter: SOIC usEccn: EAR99 Montage des Brückengleichrichters: Oberflächenmontage Anzahl der Phasen: Eine Phase Durchschnittlicher Durchlassstrom: 800mA euEccn: NLR Anzahl der Pins: 4Pin(s) Produktpalette: MB10S productTraceability: No Periodische Spitzensperrspannung: 1kV Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 9850 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SG3525ADWR2G | ONSEMI |
Description: ONSEMI - SG3525ADWR2G - PWM-Controller, Voltage-Mode, 35V-8V Versorgungsspannung, 400kHz, SOIC-16tariffCode: 85423990 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Schaltfrequenz, max.: 400kHz Qualifikation: - isCanonical: N IC-Gehäuse / Bauform: SOIC Schaltfrequenz, min.: 100Hz MSL: MSL 3 - 168 Stunden usEccn: EAR99 Schaltfrequenz, typ.: - Anzahl der Kanäle: 2Kanäle Betriebstemperatur, min.: 0°C Versorgungsspannung, min.: 8V euEccn: NLR Netzteil-Controller: Double-Ended-Regler (doppelseitig) Topologie: Halbbrücke Anzahl der Pins: 16Pin(s) Produktpalette: - Steuer-/Bedienmodus: Voltage-Mode-Regelung productTraceability: No Versorgungsspannung, max.: 35V Tastverhältnis, min.: 0% Betriebstemperatur, max.: 70°C Tastverhältnis, max.: 49% SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCA20N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCB20N60FTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 699 Stücke: Lieferzeit 14-21 Tag (e) |
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FCB20N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCP20N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 6.1...18V DC Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Kind of package: tube Kind of output: non-inverting |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33152DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 6.1...18V DC Protection: undervoltage UVP Impulse rise time: 30ns Pulse fall time: 30ns Output voltage: 0.8...11.2V Kind of package: reel; tape Kind of output: non-inverting |
auf Bestellung 1014 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BD1G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Operating voltage: 7.6...36V Power: 702mW |
auf Bestellung 907 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 702mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UC3843BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 862mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UC3843BNG | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: 0...70°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Operating voltage: 7.6...36V Power: 1.25W |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 702mW |
auf Bestellung 1999 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Operating voltage: 7.6...36V Power: 862mW |
auf Bestellung 1443 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC573ADTG | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: HC Family: HC Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: 3-state; latch transparent; octal Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC573ADTR2G | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: HC Family: HC Trigger: level-triggered Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: D latch Kind of output: 3-state; non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC573ADWG | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Family: HC Trigger: level-triggered Manufacturer series: HC Technology: CMOS Kind of output: 3-state; non-inverting |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC573ADWR2G | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Technology: CMOS Manufacturer series: HC Family: HC Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: 3-state; latch transparent; octal Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HC573MTC | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: HC Family: HC Trigger: level-triggered Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: D latch Kind of output: 3-state |
auf Bestellung 188 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC573MTCX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Technology: CMOS Case: TSSOP20 Manufacturer series: HC Family: HC Trigger: level-triggered Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 160µA Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: D latch Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC573WM | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC Type of integrated circuit: digital Technology: CMOS Case: SO20 Manufacturer series: HC Family: HC Trigger: level-triggered Mounting: SMD Operating temperature: -40...85°C Quiescent current: 80µA Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: D latch Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC573WMX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC Type of integrated circuit: digital Technology: CMOS Case: SO20 Manufacturer series: HC Family: HC Trigger: level-triggered Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of channels: 8 Kind of integrated circuit: D latch Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAS16DXV6T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double independent Capacitance: 2pF Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 2416 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16HT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOD323 Max. forward voltage: 1V Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 72736 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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LM311DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Delay time: 200ns Number of comparators: 1 Operating voltage: 5...30V Type of integrated circuit: comparator Case: SO8 Mounting: SMT Kind of comparator: universal |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC817-40LT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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BC857ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 6348 Stücke: Lieferzeit 14-21 Tag (e) |
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BC548BTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
auf Bestellung 1567 Stücke: Lieferzeit 14-21 Tag (e) |
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BC548CTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FOD814ASD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
auf Bestellung 2709 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Manufacturer series: 6N137M Supply voltage: 4.5...5.5V DC CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
auf Bestellung 1771 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137SDM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Manufacturer series: 6N137M Output voltage: 7V CTR@If: 19-50%@16mA Slew rate: 10kV/μs |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD340G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Kind of package: tube Case: DPAK Type of transistor: NPN Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V Frequency: 10MHz |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE340G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Polarisation: bipolar Collector-emitter voltage: 300V Kind of package: bulk Type of transistor: NPN Case: TO225 Mounting: THT Collector current: 0.5A Power dissipation: 20W Current gain: 30...240 |
auf Bestellung 2126 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14HE | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBSS14HE | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1827 Stücke: Lieferzeit 14-21 Tag (e) |
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UC3845BD1G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: boost; flyback Supply voltage: 8.4...36V Duty cycle factor: 0...48% Kind of package: tube Operating voltage: 7.6...36V Power: 702mW Part status: Not recommended for new designs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N5551BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 100MHz Current gain: 80...250 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N5551TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz Current gain: 80...250 |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: reel; tape Frequency: 100MHz Current gain: 80...250 |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551TFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: reel; tape Frequency: 100MHz Current gain: 80...250 |
auf Bestellung 673 Stücke: Lieferzeit 14-21 Tag (e) |
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RFP50N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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SS36FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBSS36FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TIP41CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220AB Current gain: 15...75 Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP31AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP31BG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP31CG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5227B |
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Hersteller: ONSEMI
Description: ONSEMI - 1N5227B - Zener-Diode, 3.6 V, 500 mW, DO-35, 2 Pin(s), 200 °C, Durchsteckmontage
tariffCode: 85411000
Bauform - Diode: DO-35
rohsCompliant: Y-EX
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Anzahl der Pins: 2Pin(s)
Produktpalette: 1N52xxB
productTraceability: No
Betriebstemperatur, max.: 200°C
Zener-Spannung, nom.: 3.6V
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - 1N5227B - Zener-Diode, 3.6 V, 500 mW, DO-35, 2 Pin(s), 200 °C, Durchsteckmontage
tariffCode: 85411000
Bauform - Diode: DO-35
rohsCompliant: Y-EX
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Anzahl der Pins: 2Pin(s)
Produktpalette: 1N52xxB
productTraceability: No
Betriebstemperatur, max.: 200°C
Zener-Spannung, nom.: 3.6V
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 6816 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| CAT25160VI-GT3 |
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Hersteller: ONSEMI
Description: ONSEMI - CAT25160VI-GT3 - EEPROM, 16 Kbit, 2K x 8 Bit, SPI, 10 MHz, SOIC, 8 Pin(s)
tariffCode: 85423261
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
IC-Gehäuse / Bauform: SOIC
Speicherdichte: 16Kbit
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Taktfrequenz, max.: 10MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 1.8V
euEccn: NLR
Anzahl der Pins: 8Pin(s)
Produktpalette: 16Kbit SPI Serial EEPROM
productTraceability: No
Versorgungsspannung, max.: 5.5V
Schnittstellen: SPI
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 2K x 8 Bit
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - CAT25160VI-GT3 - EEPROM, 16 Kbit, 2K x 8 Bit, SPI, 10 MHz, SOIC, 8 Pin(s)
tariffCode: 85423261
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
IC-Gehäuse / Bauform: SOIC
Speicherdichte: 16Kbit
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Taktfrequenz, max.: 10MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 1.8V
euEccn: NLR
Anzahl der Pins: 8Pin(s)
Produktpalette: 16Kbit SPI Serial EEPROM
productTraceability: No
Versorgungsspannung, max.: 5.5V
Schnittstellen: SPI
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 2K x 8 Bit
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BC857BLT1G |
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Hersteller: ONSEMI
Description: ONSEMI - BC857BLT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 45 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 225mW
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3Pin(s)
Produktpalette: BCxxx
Kollektor-Emitter-Spannung, max.: 45V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - BC857BLT1G - Bipolarer Einzeltransistor (BJT), Universal, PNP, 45 V, 100 mA, 225 mW, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 225mW
Bauform - Transistor: SOT-23
Dauerkollektorstrom: 100mA
Anzahl der Pins: 3Pin(s)
Produktpalette: BCxxx
Kollektor-Emitter-Spannung, max.: 45V
productTraceability: No
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 54452 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MC74HC595ADTR2G |
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Hersteller: ONSEMI
Description: ONSEMI - MC74HC595ADTR2G - Schieberegister, Produktreihe HC, 74HC595, Seriell zu parallel, seriell zu seriell, 1 Element
tariffCode: 85423990
Logik-IC-Sockelnummer: 74595
rohsCompliant: YES
Logik-IC-Familie: 74HC
Bauform - Logikbaustein: TSSOP
IC-Ausgang: Tri-State
Anzahl der Elemente: 1 Element
Schieberegisterfunktion: Seriell zu parallel, seriell zu seriell
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
IC-Gehäuse / Bauform: TSSOP
MSL: -
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 2V
Logikfamilie / Sockelnummer: 74HC595
euEccn: NLR
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 6V
Betriebstemperatur, max.: 125°C
Anzahl der Bits pro Element: 8bit
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - MC74HC595ADTR2G - Schieberegister, Produktreihe HC, 74HC595, Seriell zu parallel, seriell zu seriell, 1 Element
tariffCode: 85423990
Logik-IC-Sockelnummer: 74595
rohsCompliant: YES
Logik-IC-Familie: 74HC
Bauform - Logikbaustein: TSSOP
IC-Ausgang: Tri-State
Anzahl der Elemente: 1 Element
Schieberegisterfunktion: Seriell zu parallel, seriell zu seriell
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
IC-Gehäuse / Bauform: TSSOP
MSL: -
usEccn: EAR99
Betriebstemperatur, min.: -55°C
Versorgungsspannung, min.: 2V
Logikfamilie / Sockelnummer: 74HC595
euEccn: NLR
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 6V
Betriebstemperatur, max.: 125°C
Anzahl der Bits pro Element: 8bit
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BC33725TA |
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Hersteller: ONSEMI
Description: ONSEMI - BC33725TA - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 160hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Verlustleistung: 625mW
Bauform - Transistor: TO-92
Dauerkollektorstrom: 800mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 45V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - BC33725TA - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 800 mA, 625 mW, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 160hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
euEccn: NLR
Verlustleistung: 625mW
Bauform - Transistor: TO-92
Dauerkollektorstrom: 800mA
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 45V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MB10S |
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Hersteller: ONSEMI
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 V
tariffCode: 85411000
Durchlassstoßstrom: 35A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Durchlassspannung, max.: 1V
Bauform - Brückengleichrichter: SOIC
usEccn: EAR99
Montage des Brückengleichrichters: Oberflächenmontage
Anzahl der Phasen: Eine Phase
Durchschnittlicher Durchlassstrom: 800mA
euEccn: NLR
Anzahl der Pins: 4Pin(s)
Produktpalette: MB10S
productTraceability: No
Periodische Spitzensperrspannung: 1kV
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 V
tariffCode: 85411000
Durchlassstoßstrom: 35A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Durchlassspannung, max.: 1V
Bauform - Brückengleichrichter: SOIC
usEccn: EAR99
Montage des Brückengleichrichters: Oberflächenmontage
Anzahl der Phasen: Eine Phase
Durchschnittlicher Durchlassstrom: 800mA
euEccn: NLR
Anzahl der Pins: 4Pin(s)
Produktpalette: MB10S
productTraceability: No
Periodische Spitzensperrspannung: 1kV
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 9850 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| MB10S |
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Hersteller: ONSEMI
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 V
tariffCode: 85411000
Durchlassstoßstrom: 35A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Durchlassspannung, max.: 1V
Bauform - Brückengleichrichter: SOIC
usEccn: EAR99
Montage des Brückengleichrichters: Oberflächenmontage
Anzahl der Phasen: Eine Phase
Durchschnittlicher Durchlassstrom: 800mA
euEccn: NLR
Anzahl der Pins: 4Pin(s)
Produktpalette: MB10S
productTraceability: No
Periodische Spitzensperrspannung: 1kV
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - MB10S - Brückengleichrichter, Eine Phase, 1 kV, 800 mA, SOIC, 4 Pin(s), 1 V
tariffCode: 85411000
Durchlassstoßstrom: 35A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Durchlassspannung, max.: 1V
Bauform - Brückengleichrichter: SOIC
usEccn: EAR99
Montage des Brückengleichrichters: Oberflächenmontage
Anzahl der Phasen: Eine Phase
Durchschnittlicher Durchlassstrom: 800mA
euEccn: NLR
Anzahl der Pins: 4Pin(s)
Produktpalette: MB10S
productTraceability: No
Periodische Spitzensperrspannung: 1kV
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 9850 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SG3525ADWR2G |
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Hersteller: ONSEMI
Description: ONSEMI - SG3525ADWR2G - PWM-Controller, Voltage-Mode, 35V-8V Versorgungsspannung, 400kHz, SOIC-16
tariffCode: 85423990
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Schaltfrequenz, max.: 400kHz
Qualifikation: -
isCanonical: N
IC-Gehäuse / Bauform: SOIC
Schaltfrequenz, min.: 100Hz
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Schaltfrequenz, typ.: -
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: 0°C
Versorgungsspannung, min.: 8V
euEccn: NLR
Netzteil-Controller: Double-Ended-Regler (doppelseitig)
Topologie: Halbbrücke
Anzahl der Pins: 16Pin(s)
Produktpalette: -
Steuer-/Bedienmodus: Voltage-Mode-Regelung
productTraceability: No
Versorgungsspannung, max.: 35V
Tastverhältnis, min.: 0%
Betriebstemperatur, max.: 70°C
Tastverhältnis, max.: 49%
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - SG3525ADWR2G - PWM-Controller, Voltage-Mode, 35V-8V Versorgungsspannung, 400kHz, SOIC-16
tariffCode: 85423990
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Schaltfrequenz, max.: 400kHz
Qualifikation: -
isCanonical: N
IC-Gehäuse / Bauform: SOIC
Schaltfrequenz, min.: 100Hz
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Schaltfrequenz, typ.: -
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: 0°C
Versorgungsspannung, min.: 8V
euEccn: NLR
Netzteil-Controller: Double-Ended-Regler (doppelseitig)
Topologie: Halbbrücke
Anzahl der Pins: 16Pin(s)
Produktpalette: -
Steuer-/Bedienmodus: Voltage-Mode-Regelung
productTraceability: No
Versorgungsspannung, max.: 35V
Tastverhältnis, min.: 0%
Betriebstemperatur, max.: 70°C
Tastverhältnis, max.: 49%
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2132 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FCA20N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB20N60FTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.13 EUR |
| 13+ | 5.66 EUR |
| 15+ | 4.86 EUR |
| 25+ | 4.2 EUR |
| 50+ | 3.78 EUR |
| 100+ | 3.43 EUR |
| 500+ | 3.37 EUR |
| FCB20N60TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.96 EUR |
| 16+ | 4.65 EUR |
| 17+ | 4.22 EUR |
| MC33152DG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of output: non-inverting
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| MC33152DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 6.1...18V DC
Protection: undervoltage UVP
Impulse rise time: 30ns
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 1014 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 77+ | 0.93 EUR |
| 80+ | 0.9 EUR |
| UC3843BD1G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
auf Bestellung 907 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 167+ | 0.43 EUR |
| 197+ | 0.36 EUR |
| 202+ | 0.35 EUR |
| UC3843BD1R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UC3843BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UC3843BNG |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 1.25W
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.19 EUR |
| 97+ | 0.74 EUR |
| 103+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| 115+ | 0.62 EUR |
| 250+ | 0.58 EUR |
| UC3843BVD1R2G | ![]() |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 702mW
auf Bestellung 1999 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 89+ | 0.81 EUR |
| 109+ | 0.66 EUR |
| 143+ | 0.5 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| UC3843BVDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Operating voltage: 7.6...36V
Power: 862mW
auf Bestellung 1443 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 86+ | 0.83 EUR |
| 105+ | 0.69 EUR |
| 136+ | 0.53 EUR |
| 250+ | 0.45 EUR |
| 500+ | 0.42 EUR |
| MC74HC573ADTG | ![]() |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: 3-state; latch transparent; octal
Kind of output: 3-state
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: 3-state; latch transparent; octal
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC573ADTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state; non-inverting
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state; non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC573ADWG | ![]() |
![]() |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Family: HC
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state; non-inverting
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Family: HC
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Kind of output: 3-state; non-inverting
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.59 EUR |
| MC74HC573ADWR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Manufacturer series: HC
Family: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: 3-state; latch transparent; octal
Kind of output: 3-state
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Technology: CMOS
Manufacturer series: HC
Family: HC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: 3-state; latch transparent; octal
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC573MTC |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.38 EUR |
| 13+ | 5.72 EUR |
| 25+ | 4.92 EUR |
| 75+ | 4.4 EUR |
| MM74HC573MTCX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC573WM |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SO20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 80µA
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SO20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 80µA
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC573WMX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SO20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SO20
Manufacturer series: HC
Family: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of channels: 8
Kind of integrated circuit: D latch
Kind of output: 3-state
Produkt ist nicht verfügbar
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| BAS16DXV6T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 763+ | 0.094 EUR |
| 810+ | 0.088 EUR |
| 860+ | 0.083 EUR |
| 935+ | 0.077 EUR |
| 939+ | 0.076 EUR |
| BAS16HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; 6ns; SOD323; Ufmax: 1V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1V
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 72736 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1667+ | 0.043 EUR |
| 2500+ | 0.029 EUR |
| 3650+ | 0.02 EUR |
| 4167+ | 0.017 EUR |
| 4546+ | 0.016 EUR |
| 4902+ | 0.015 EUR |
| 5435+ | 0.013 EUR |
| 9000+ | 0.012 EUR |
| FCH077N65F-F085 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH077N65F-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM311DR2G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Delay time: 200ns
Number of comparators: 1
Operating voltage: 5...30V
Type of integrated circuit: comparator
Case: SO8
Mounting: SMT
Kind of comparator: universal
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Delay time: 200ns
Number of comparators: 1
Operating voltage: 5...30V
Type of integrated circuit: comparator
Case: SO8
Mounting: SMT
Kind of comparator: universal
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 239+ | 0.3 EUR |
| 281+ | 0.25 EUR |
| 302+ | 0.24 EUR |
| FDP18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 25+ | 2.86 EUR |
| 31+ | 2.37 EUR |
| FDPF18N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.19 EUR |
| 27+ | 2.66 EUR |
| FDPF18N50T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.29 EUR |
| 23+ | 3.19 EUR |
| 27+ | 2.75 EUR |
| 50+ | 2.7 EUR |
| BC817-40LT1G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817-40LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857ALT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 878+ | 0.082 EUR |
| 1296+ | 0.055 EUR |
| 1548+ | 0.046 EUR |
| 2294+ | 0.031 EUR |
| 2674+ | 0.027 EUR |
| 2907+ | 0.025 EUR |
| 3334+ | 0.021 EUR |
| 6000+ | 0.019 EUR |
| BC548BTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
auf Bestellung 1567 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 371+ | 0.19 EUR |
| 652+ | 0.11 EUR |
| 955+ | 0.075 EUR |
| 1109+ | 0.064 EUR |
| BC548CTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD814ASD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
auf Bestellung 2709 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 165+ | 0.43 EUR |
| 191+ | 0.37 EUR |
| 244+ | 0.29 EUR |
| 286+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |
| 6N137M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 126+ | 0.57 EUR |
| 135+ | 0.53 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.47 EUR |
| 6N137SDM |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Manufacturer series: 6N137M
Output voltage: 7V
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps; 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Manufacturer series: 6N137M
Output voltage: 7V
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.5 EUR |
| 75+ | 0.96 EUR |
| 89+ | 0.81 EUR |
| 104+ | 0.69 EUR |
| 107+ | 0.67 EUR |
| MJD340G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Kind of package: tube
Case: DPAK
Type of transistor: NPN
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Kind of package: tube
Case: DPAK
Type of transistor: NPN
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Frequency: 10MHz
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 58+ | 1.23 EUR |
| MJE340G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Polarisation: bipolar
Collector-emitter voltage: 300V
Kind of package: bulk
Type of transistor: NPN
Case: TO225
Mounting: THT
Collector current: 0.5A
Power dissipation: 20W
Current gain: 30...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Polarisation: bipolar
Collector-emitter voltage: 300V
Kind of package: bulk
Type of transistor: NPN
Case: TO225
Mounting: THT
Collector current: 0.5A
Power dissipation: 20W
Current gain: 30...240
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 137+ | 0.52 EUR |
| 197+ | 0.36 EUR |
| 217+ | 0.33 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| SS14HE |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| NRVBSS14HE |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1827 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 191+ | 0.38 EUR |
| 277+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| UC3845BD1G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
Part status: Not recommended for new designs
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 7.6...36V
Power: 702mW
Part status: Not recommended for new designs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5551BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Current gain: 80...250
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Current gain: 80...250
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5551TA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Current gain: 80...250
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Current gain: 80...250
auf Bestellung 1720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 348+ | 0.21 EUR |
| 514+ | 0.14 EUR |
| 611+ | 0.12 EUR |
| 890+ | 0.08 EUR |
| 1029+ | 0.069 EUR |
| 2N5551TF |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 313+ | 0.23 EUR |
| 444+ | 0.16 EUR |
| 2N5551TFR |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Current gain: 80...250
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 472+ | 0.15 EUR |
| 673+ | 0.11 EUR |
| RFP50N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 48+ | 1.52 EUR |
| SS36FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 141+ | 0.51 EUR |
| 157+ | 0.46 EUR |
| 233+ | 0.31 EUR |
| 500+ | 0.24 EUR |
| NRVBSS36FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP41CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 71+ | 1.02 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| TIP31AG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| TIP31BG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 94+ | 0.76 EUR |
| 126+ | 0.57 EUR |
| 146+ | 0.49 EUR |
| TIP31CG |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |







































