| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MM74HC126MX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Family: HC Manufacturer series: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NSI45015WT1G | ONSEMI |
Category: LED driversDescription: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V DC Power dissipation: 0.46W Operating current: 15mA |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS120T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC245DWG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Manufacturer series: AC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape Quiescent current: 80µA Kind of output: 3-state |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ15024G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Collector current: 16A Collector-emitter voltage: 250V |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT4401LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQAF16N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBR0530T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 30474 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR0530T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 7834 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33035DWG | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Supply voltage: 0...40V DC Operating temperature: -40...85°C Kind of package: tube Mounting: SMD Case: SO24 Number of channels: 3 Operating voltage: 10...30V DC Kind of integrated circuit: brushless motor controller Type of integrated circuit: driver |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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NUD4001DR2G | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM Mounting: SMD Case: SO8 Operating temperature: -40...125°C Type of integrated circuit: driver Output current: 0.5A Output voltage: 28V Kind of integrated circuit: LED driver Integrated circuit features: PWM Number of channels: 1 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of channel: enhancement |
auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Kind of channel: enhancement |
auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
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6N138M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 300-1600%@1.6mA Case: DIP8 Manufacturer series: 6N138M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBFJ201 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA Case: SOT23 Type of transistor: N-JFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -40V Drain current: 200µA Gate current: 50mA Power dissipation: 0.35W |
auf Bestellung 3170 Stücke: Lieferzeit 14-21 Tag (e) |
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| CAT24C04HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Kind of interface: serial Operating temperature: -40...85°C Memory: 4kb EEPROM Operating voltage: 1.7...5.5V Clock frequency: 400kHz Memory organisation: 512x8bit Interface: I2C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FQD2N90TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.08A Pulsed drain current: 6.8A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 7.2Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP431ACSNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 0.1A Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCPF11N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF11N60T | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD6637 | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Drain current: -55A Drain-source voltage: -35V Gate charge: 35nC On-state resistance: 19mΩ Gate-source voltage: ±25V Power dissipation: 57W Polarisation: unipolar |
auf Bestellung 2554 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTH81 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Type of transistor: PNP Kind of package: reel; tape Kind of transistor: RF Mounting: SMD Case: SOT23 Collector current: 50mA Power dissipation: 0.225W Collector-emitter voltage: 20V Frequency: 600MHz Polarisation: bipolar |
auf Bestellung 2482 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC86M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 20µA Family: HC Kind of package: tube Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MJH11020G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Kind of transistor: Darlington Type of transistor: PNP Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V Polarisation: bipolar |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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MJH11022G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Kind of transistor: Darlington Type of transistor: NPN Mounting: THT Case: TO247-3 Kind of package: tube Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V Polarisation: bipolar |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of transistor: Darlington |
auf Bestellung 1462 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C10 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 2779 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C15 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 15V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX85C Kind of package: bulk |
auf Bestellung 4186 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C16 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C Tolerance: ±5% Mounting: THT Manufacturer series: BZX85C Semiconductor structure: single diode Kind of package: bulk Power dissipation: 1.3W Zener voltage: 16V Leakage current: 0.5µA Case: DO41 Type of diode: Zener |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA06LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 438 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC32MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...85°C Delay time: 10ns Technology: CMOS |
Produkt ist nicht verfügbar |
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MM74HC32MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -40...85°C Delay time: 10ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC86MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Family: HC Delay time: 9ns Kind of package: reel; tape Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MM74HC86MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Family: HC Kind of package: reel; tape Manufacturer series: HC Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HC132MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC132MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of input: with Schmitt trigger Family: HC Kind of package: reel; tape Delay time: 12ns Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD1503A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Case: SOT23 Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Kind of package: reel; tape Semiconductor structure: double series |
auf Bestellung 2766 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.225/0.3W Collector-emitter voltage: 60V Type of transistor: NPN Current gain: 250...800 Polarisation: bipolar |
auf Bestellung 2889 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Output voltage: 1.2...37V Mounting: THT Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output current: 0.1A Number of channels: 1 Input voltage: 3...40V Kind of voltage regulator: adjustable; linear Kind of package: bulk Case: TO92 Manufacturer series: LM317L |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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LM317LZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Operating temperature: 0...125°C Number of channels: 1 Input voltage: 3...40V Manufacturer series: LM317L Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MUR1640CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
Produkt ist nicht verfügbar |
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FSB560A | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Frequency: 75MHz Polarisation: bipolar Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 60V Current gain: 250...550 |
Produkt ist nicht verfügbar |
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QSD2030 | ONSEMI |
Category: PhotodiodesDescription: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex Operating voltage: 1.3V LED lens: transparent Front: convex Mounting: THT Type of photoelement: photodiode Wavelength: 400...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Viewing angle: 40° |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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LM258DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Operating temperature: -25...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FQA140N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1075STAT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 59...71kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP1075STBT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 16Ω Operating voltage: 6.3...10V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
6N139M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 500-1600%@1.6mA Case: DIP8 Turn-on time: 0.2µs Turn-off time: 1.3µs Manufacturer series: 6N139M |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP27P06 | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -27A Case: TO220AB Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 369 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5335BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA Type of diode: Zener Power dissipation: 5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 50µA Manufacturer series: 1N53xxB |
auf Bestellung 2048 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N53xxB |
auf Bestellung 4270 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N53xxB |
auf Bestellung 606 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5341BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
auf Bestellung 1605 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5341BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.2V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP32AG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP32BG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MM74HC126MX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSI45015WT1G |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45VDC; 460mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V DC
Power dissipation: 0.46W
Operating current: 15mA
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 225+ | 0.32 EUR |
| 272+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 750+ | 0.14 EUR |
| MURS120T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 243+ | 0.29 EUR |
| 271+ | 0.26 EUR |
| 338+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 834+ | 0.086 EUR |
| 878+ | 0.082 EUR |
| MC74AC245DWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 80µA
Kind of output: 3-state
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 56+ | 1.29 EUR |
| 81+ | 0.89 EUR |
| 82+ | 0.87 EUR |
| 85+ | 0.84 EUR |
| 114+ | 0.83 EUR |
| MJ15024G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 250V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 250V
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.05 EUR |
| 10+ | 7.22 EUR |
| 11+ | 6.56 EUR |
| MMBT4401LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQAF16N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR0530T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 30474 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 575+ | 0.12 EUR |
| 655+ | 0.11 EUR |
| 701+ | 0.1 EUR |
| 1806+ | 0.04 EUR |
| 1909+ | 0.037 EUR |
| MBR0530T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 7834 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 807+ | 0.089 EUR |
| 951+ | 0.075 EUR |
| 1017+ | 0.07 EUR |
| 1208+ | 0.059 EUR |
| 1279+ | 0.056 EUR |
| 2000+ | 0.054 EUR |
| MC33035DWG |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: tube
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: tube
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.46 EUR |
| 13+ | 5.52 EUR |
| 14+ | 5.29 EUR |
| NUD4001DR2G | ![]() |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Type of integrated circuit: driver
Output current: 0.5A
Output voltage: 28V
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Number of channels: 1
Category: LED drivers
Description: IC: driver; LED driver; SO8; 500mA; 28V; Ch: 1; PWM
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Type of integrated circuit: driver
Output current: 0.5A
Output voltage: 28V
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Number of channels: 1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 73+ | 0.99 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| 250+ | 0.63 EUR |
| NTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 209+ | 0.34 EUR |
| 304+ | 0.24 EUR |
| 358+ | 0.2 EUR |
| 496+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| NVTJD4001NT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.18A
Power dissipation: 0.272W
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
auf Bestellung 2910 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 191+ | 0.38 EUR |
| 222+ | 0.32 EUR |
| 283+ | 0.25 EUR |
| 397+ | 0.18 EUR |
| 491+ | 0.15 EUR |
| 532+ | 0.13 EUR |
| 6N138M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP8; 6N138M
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 300-1600%@1.6mA
Case: DIP8
Manufacturer series: 6N138M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ201 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 200uA; 0.35W; SOT23; Igt: 50mA
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 200µA
Gate current: 50mA
Power dissipation: 0.35W
auf Bestellung 3170 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 188+ | 0.38 EUR |
| 253+ | 0.28 EUR |
| 290+ | 0.25 EUR |
| 327+ | 0.22 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| CAT24C04HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 4kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory organisation: 512x8bit
Interface: I2C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...85°C
Memory: 4kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Memory organisation: 512x8bit
Interface: I2C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD2N90TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.08A
Pulsed drain current: 6.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.08A
Pulsed drain current: 6.8A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 7.2Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU2N90TU-AM002 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU2N90TU-WS |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP431ACSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 0.1A
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF11N60 | ![]() |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.66 EUR |
| 33+ | 2.23 EUR |
| 35+ | 2.09 EUR |
| 50+ | 2.02 EUR |
| FCPF11N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.92 EUR |
| 25+ | 2.96 EUR |
| 26+ | 2.79 EUR |
| FCPF11N60T |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD6637 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
auf Bestellung 2554 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.02 EUR |
| 41+ | 1.76 EUR |
| 45+ | 1.6 EUR |
| 61+ | 1.17 EUR |
| 65+ | 1.12 EUR |
| 250+ | 1.07 EUR |
| MMBTH81 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Collector current: 50mA
Power dissipation: 0.225W
Collector-emitter voltage: 20V
Frequency: 600MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: SOT23
Collector current: 50mA
Power dissipation: 0.225W
Collector-emitter voltage: 20V
Frequency: 600MHz
Polarisation: bipolar
auf Bestellung 2482 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 417+ | 0.17 EUR |
| 481+ | 0.15 EUR |
| 575+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 794+ | 0.09 EUR |
| 1220+ | 0.059 EUR |
| 1283+ | 0.056 EUR |
| MM74HC86M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: HC
Kind of package: tube
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJH11020G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.36 EUR |
| 15+ | 4.92 EUR |
| 16+ | 4.48 EUR |
| MJH11021G |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Polarisation: bipolar
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.02 EUR |
| 16+ | 4.73 EUR |
| 17+ | 4.45 EUR |
| MJH11022G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Polarisation: bipolar
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.48 EUR |
| 18+ | 4.02 EUR |
| 19+ | 3.85 EUR |
| 21+ | 3.55 EUR |
| 30+ | 3.5 EUR |
| MJD127T4G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of transistor: Darlington
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 76+ | 0.95 EUR |
| 89+ | 0.81 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| BZX85C10 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 2779 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 521+ | 0.14 EUR |
| 618+ | 0.12 EUR |
| 989+ | 0.072 EUR |
| 1177+ | 0.061 EUR |
| 1413+ | 0.051 EUR |
| 1429+ | 0.05 EUR |
| BZX85C15 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 15V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 15V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX85C
Kind of package: bulk
auf Bestellung 4186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 521+ | 0.14 EUR |
| 645+ | 0.11 EUR |
| 765+ | 0.094 EUR |
| 903+ | 0.079 EUR |
| 1107+ | 0.065 EUR |
| 1484+ | 0.048 EUR |
| 1568+ | 0.046 EUR |
| 3000+ | 0.044 EUR |
| BZX85C16 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Semiconductor structure: single diode
Kind of package: bulk
Power dissipation: 1.3W
Zener voltage: 16V
Leakage current: 0.5µA
Case: DO41
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; bulk; DO41; single diode; 0.5uA; BZX85C
Tolerance: ±5%
Mounting: THT
Manufacturer series: BZX85C
Semiconductor structure: single diode
Kind of package: bulk
Power dissipation: 1.3W
Zener voltage: 16V
Leakage current: 0.5µA
Case: DO41
Type of diode: Zener
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 146+ | 0.49 EUR |
| MMBTA06LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 438 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 438+ | 0.16 EUR |
| MM74HC32MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 10ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC32MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -40...85°C
Delay time: 10ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC86MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 9ns
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Family: HC
Delay time: 9ns
Kind of package: reel; tape
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC86MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Family: HC
Kind of package: reel; tape
Delay time: 12ns
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1503A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
auf Bestellung 2766 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 315+ | 0.23 EUR |
| 444+ | 0.16 EUR |
| 518+ | 0.14 EUR |
| 887+ | 0.081 EUR |
| 939+ | 0.076 EUR |
| 2000+ | 0.073 EUR |
| MMBT2484LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 60V
Type of transistor: NPN
Current gain: 250...800
Polarisation: bipolar
auf Bestellung 2889 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 491+ | 0.15 EUR |
| 709+ | 0.1 EUR |
| 832+ | 0.086 EUR |
| 1894+ | 0.038 EUR |
| 2000+ | 0.036 EUR |
| LM317LZG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Output voltage: 1.2...37V
Mounting: THT
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output current: 0.1A
Number of channels: 1
Input voltage: 3...40V
Kind of voltage regulator: adjustable; linear
Kind of package: bulk
Case: TO92
Manufacturer series: LM317L
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 110+ | 0.64 EUR |
| LM317LZRAG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Manufacturer series: LM317L
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Manufacturer series: LM317L
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MUR1640CTG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB560A |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.5W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 75MHz
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 60V
Current gain: 250...550
Produkt ist nicht verfügbar
Im Einkaufswagen
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| QSD2030 |
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Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Operating voltage: 1.3V
LED lens: transparent
Front: convex
Mounting: THT
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 40°
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 400÷1100nm; 40°; 1.3V; convex
Operating voltage: 1.3V
LED lens: transparent
Front: convex
Mounting: THT
Type of photoelement: photodiode
Wavelength: 400...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 40°
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.46 EUR |
| LM258DR2G | ![]() |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Operating temperature: -25...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA140N10 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.55 EUR |
| 11+ | 6.56 EUR |
| 12+ | 6.21 EUR |
| NCP1075STAT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1075STBT3G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 6N139M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500-1600%@1.6mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500-1600%@1.6mA
Case: DIP8
Turn-on time: 0.2µs
Turn-off time: 1.3µs
Manufacturer series: 6N139M
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 75+ | 0.96 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.7 EUR |
| FQP27P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 369 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 44+ | 1.63 EUR |
| 46+ | 1.59 EUR |
| 48+ | 1.5 EUR |
| 50+ | 1.44 EUR |
| 1N5335BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 3.9V; reel,tape; CASE017AA; single diode; 50uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 50µA
Manufacturer series: 1N53xxB
auf Bestellung 2048 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 214+ | 0.33 EUR |
| 252+ | 0.28 EUR |
| 311+ | 0.23 EUR |
| 329+ | 0.22 EUR |
| 1000+ | 0.21 EUR |
| 1N5337BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; reel,tape; CASE017AA; single diode; 5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 4270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 143+ | 0.5 EUR |
| 162+ | 0.44 EUR |
| 275+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| 1N5337BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; bulk; CASE017AA; single diode; 5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N53xxB
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 205+ | 0.35 EUR |
| 228+ | 0.31 EUR |
| 291+ | 0.25 EUR |
| 313+ | 0.23 EUR |
| 321+ | 0.22 EUR |
| 1N5341BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 137+ | 0.52 EUR |
| 153+ | 0.47 EUR |
| 240+ | 0.3 EUR |
| 248+ | 0.29 EUR |
| 254+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| 1N5341BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.2V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.2V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 161+ | 0.45 EUR |
| 178+ | 0.4 EUR |
| 307+ | 0.23 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| TIP32AG |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 66+ | 1.1 EUR |
| 132+ | 0.54 EUR |
| 140+ | 0.51 EUR |
| 141+ | 0.5 EUR |
| TIP32BG |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Produkt ist nicht verfügbar
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