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MC74HC245ADWG MC74HC245ADWG ONSEMI MC74HC245ADTG.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
114+0.63 EUR
143+0.5 EUR
Mindestbestellmenge: 88
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MC74HC245ADWR2G ONSEMI MC74HC245A-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AMTC MM74HC245AMTC ONSEMI MM74HC245A-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.43 EUR
82+0.87 EUR
101+0.71 EUR
122+0.59 EUR
Mindestbestellmenge: 50
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MM74HC245AMTCX MM74HC245AMTCX ONSEMI MM74HC245A-D.PDF FAIRS32532-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245ASJ ONSEMI ONSM-S-A0006342266-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AWM MM74HC245AWM ONSEMI MM74HC245A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
117+0.62 EUR
125+0.58 EUR
128+0.56 EUR
133+0.54 EUR
134+0.53 EUR
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MM74HC245AWMX MM74HC245AWMX ONSEMI MM74HC245A-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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BD13916S BD13916S ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BD13916STU BD13916STU ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
auf Bestellung 2716 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
119+0.6 EUR
140+0.51 EUR
161+0.44 EUR
178+0.4 EUR
540+0.32 EUR
Mindestbestellmenge: 71
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BD139G BD139G ONSEMI bd135-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000-D26Z 2N7000-D26Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
198+0.36 EUR
283+0.25 EUR
329+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 125
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2N7000-D74Z 2N7000-D74Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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2N7000-D75Z 2N7000-D75Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 1939 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
207+0.35 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 136
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2N7000BU 2N7000BU ONSEMI 2N7000TA.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000TA 2N7000TA ONSEMI 2N7000TA.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
199+0.36 EUR
353+0.2 EUR
506+0.14 EUR
Mindestbestellmenge: 143
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BS170 BS170 ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 9249 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
216+0.33 EUR
250+0.29 EUR
336+0.21 EUR
468+0.15 EUR
582+0.12 EUR
658+0.11 EUR
1000+0.099 EUR
3000+0.097 EUR
Mindestbestellmenge: 179
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BS170-D75Z BS170-D75Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 5171 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
304+0.24 EUR
394+0.18 EUR
582+0.12 EUR
Mindestbestellmenge: 264
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BS170-D26Z BS170-D26Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
218+0.33 EUR
262+0.27 EUR
300+0.24 EUR
341+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 132
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BS170-D27Z BS170-D27Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4096 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
235+0.3 EUR
291+0.25 EUR
400+0.18 EUR
556+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 152
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BC807-40LT1G BC807-40LT1G ONSEMI BC807-xxL.pdf description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC807-40LT3G BC807-40LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BD140G BD140G ONSEMI BD136G_BD140G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
80+0.9 EUR
102+0.71 EUR
112+0.64 EUR
250+0.57 EUR
Mindestbestellmenge: 47
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MMBD1401 MMBD1401 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
782+0.092 EUR
910+0.079 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 625
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MMBD1403 MMBD1403 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 MMBD1404 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
414+0.17 EUR
Mindestbestellmenge: 358
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MMBD1404A MMBD1404A ONSEMI mmbd1405a-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 MMBD1405 ONSEMI mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
397+0.18 EUR
519+0.14 EUR
585+0.12 EUR
765+0.094 EUR
1000+0.084 EUR
Mindestbestellmenge: 313
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2N3904BU 2N3904BU ONSEMI 2N3904BU-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 9093 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
348+0.21 EUR
404+0.18 EUR
709+0.1 EUR
993+0.072 EUR
1122+0.064 EUR
2000+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 264
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2N3904TFR 2N3904TFR ONSEMI pzt3904-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
863+0.083 EUR
926+0.077 EUR
1092+0.065 EUR
1177+0.061 EUR
1211+0.059 EUR
Mindestbestellmenge: 715
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BSS138L BSS138L ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
532+0.13 EUR
693+0.1 EUR
787+0.091 EUR
939+0.076 EUR
1080+0.066 EUR
1260+0.057 EUR
3000+0.043 EUR
Mindestbestellmenge: 385
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BSS138LT1G BSS138LT1G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 3.5Ω
Power dissipation: 0.225W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 7922 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
368+0.19 EUR
458+0.16 EUR
652+0.11 EUR
964+0.074 EUR
1092+0.065 EUR
3000+0.055 EUR
6000+0.051 EUR
Mindestbestellmenge: 278
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BSS138LT3G BSS138LT3G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
451+0.16 EUR
556+0.13 EUR
762+0.094 EUR
840+0.086 EUR
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BSS138W BSS138W ONSEMI 5272_BSS138W.pdf bss138w-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
379+0.19 EUR
506+0.14 EUR
581+0.12 EUR
806+0.089 EUR
1000+0.083 EUR
3000+0.07 EUR
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LM2904DR2G LM2904DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7216 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
397+0.18 EUR
451+0.16 EUR
491+0.15 EUR
538+0.13 EUR
667+0.11 EUR
736+0.097 EUR
770+0.093 EUR
2500+0.086 EUR
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FGH40N60SFDTU FGH40N60SFDTU ONSEMI FGH40N60SFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 24 Stücke:
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14+5.25 EUR
16+4.65 EUR
21+3.5 EUR
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FGH40N60SMD FGH40N60SMD ONSEMI FGH40N60SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 180nC
Collector current: 40A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 120A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 158 Stücke:
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15+5.08 EUR
16+4.75 EUR
18+4.09 EUR
30+3.43 EUR
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FGH40N60UFDTU FGH40N60UFDTU ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 40A
Power dissipation: 116W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 120A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.22 EUR
28+2.62 EUR
30+2.49 EUR
120+2.37 EUR
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FGAF40N60UFDTU ONSEMI FGAF40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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BCP53-10T1G BCP53-10T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
178+0.4 EUR
269+0.27 EUR
304+0.24 EUR
500+0.2 EUR
Mindestbestellmenge: 105
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BCP53-16T1G BCP53-16T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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BC856BDW1T1G BC856BDW1T1G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5842 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
977+0.073 EUR
1158+0.062 EUR
1713+0.042 EUR
1977+0.036 EUR
3000+0.031 EUR
Mindestbestellmenge: 500
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BC856BLT1G BC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
472+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1348+0.053 EUR
1568+0.046 EUR
Mindestbestellmenge: 417
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MMBT2222ALT1G MMBT2222ALT1G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 38709 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
667+0.11 EUR
977+0.073 EUR
1169+0.061 EUR
1767+0.04 EUR
2119+0.034 EUR
3000+0.026 EUR
9000+0.021 EUR
24000+0.017 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222ALT3G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G ONSEMI MMBT2222ATT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
962+0.074 EUR
1276+0.056 EUR
1425+0.05 EUR
1731+0.041 EUR
1909+0.037 EUR
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MMBT2222AWT1G MMBT2222AWT1G ONSEMI MMBT2222AWT1G.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6573 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
758+0.094 EUR
1087+0.066 EUR
1276+0.056 EUR
1563+0.046 EUR
1812+0.039 EUR
2101+0.034 EUR
2294+0.031 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
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MMBT2222AWT3G MMBT2222AWT3G ONSEMI MMBT2222AWT1G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG 1N5408RLG ONSEMI 1N540x.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
404+0.18 EUR
486+0.15 EUR
527+0.14 EUR
569+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 200
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FOD3120SD FOD3120SD ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.07 EUR
38+1.9 EUR
43+1.67 EUR
44+1.63 EUR
100+1.42 EUR
250+1.29 EUR
300+1.27 EUR
500+1.22 EUR
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FOD3120SDV FOD3120SDV ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG ONSEMI MC74AC132DG.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
218+0.33 EUR
232+0.31 EUR
233+0.3 EUR
Mindestbestellmenge: 152
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BCP56-16T1G BCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.13 EUR
Mindestbestellmenge: 63
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BCP56-16T3G BCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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SBCP56-16T1G SBCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K ONSEMI 2n7002k-fsc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
323+0.22 EUR
490+0.15 EUR
588+0.12 EUR
738+0.097 EUR
Mindestbestellmenge: 228
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2N7002KT1G 2N7002KT1G ONSEMI 2N7002K.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
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1N4742A 1N4742A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1352+0.053 EUR
1598+0.045 EUR
Mindestbestellmenge: 715
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1N4742ATR 1N4742ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
569+0.13 EUR
658+0.11 EUR
774+0.093 EUR
Mindestbestellmenge: 455
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MC74HC245ADWG MC74HC245ADTG.pdf
MC74HC245ADWG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
114+0.63 EUR
143+0.5 EUR
Mindestbestellmenge: 88
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MC74HC245ADWR2G MC74HC245A-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AMTC MM74HC245A-D.pdf
MM74HC245AMTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
82+0.87 EUR
101+0.71 EUR
122+0.59 EUR
Mindestbestellmenge: 50
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MM74HC245AMTCX MM74HC245A-D.PDF FAIRS32532-1.pdf?t.download=true&u=5oefqw
MM74HC245AMTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245ASJ ONSM-S-A0006342266-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Case: SOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AWM MM74HC245A.pdf
MM74HC245AWM
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
117+0.62 EUR
125+0.58 EUR
128+0.56 EUR
133+0.54 EUR
134+0.53 EUR
Mindestbestellmenge: 82
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MM74HC245AWMX MM74HC245A-D.PDF
MM74HC245AWMX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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BD13916S BD135_137_139.PDF
BD13916S
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BD13916STU BD135_137_139.PDF
BD13916STU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
auf Bestellung 2716 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
119+0.6 EUR
140+0.51 EUR
161+0.44 EUR
178+0.4 EUR
540+0.32 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
BD139G bd135-d.pdf
BD139G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000-D26Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
198+0.36 EUR
283+0.25 EUR
329+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
2N7000-D74Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7000-D75Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 1939 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
207+0.35 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
2N7000BU 2N7000TA.pdf
2N7000BU
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7000TA 2N7000TA.pdf
2N7000TA
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
199+0.36 EUR
353+0.2 EUR
506+0.14 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BS170 BS170,MMBF170.PDF
BS170
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 9249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
216+0.33 EUR
250+0.29 EUR
336+0.21 EUR
468+0.15 EUR
582+0.12 EUR
658+0.11 EUR
1000+0.099 EUR
3000+0.097 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
BS170-D75Z BS170,MMBF170.PDF
BS170-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 5171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
304+0.24 EUR
394+0.18 EUR
582+0.12 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BS170-D26Z BS170,MMBF170.PDF
BS170-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
218+0.33 EUR
262+0.27 EUR
300+0.24 EUR
341+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
BS170-D27Z BS170,MMBF170.PDF
BS170-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
235+0.3 EUR
291+0.25 EUR
400+0.18 EUR
556+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
BC807-40LT1G description BC807-xxL.pdf
BC807-40LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC807-40LT3G bc807-16lt1-d.pdf
BC807-40LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD140G BD136G_BD140G.PDF
BD140G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
80+0.9 EUR
102+0.71 EUR
112+0.64 EUR
250+0.57 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1401 mmbd1405-d.pdf
MMBD1401
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
782+0.092 EUR
910+0.079 EUR
962+0.074 EUR
1021+0.07 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1404 mmbd1405-d.pdf
MMBD1404
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
414+0.17 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1404A mmbd1405a-d.pdf
MMBD1404A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw
MMBD1405
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2718 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
397+0.18 EUR
519+0.14 EUR
585+0.12 EUR
765+0.094 EUR
1000+0.084 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
2N3904BU 2N3904BU-DTE.pdf
2N3904BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 9093 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
348+0.21 EUR
404+0.18 EUR
709+0.1 EUR
993+0.072 EUR
1122+0.064 EUR
2000+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
2N3904TFR pzt3904-d.pdf
2N3904TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
863+0.083 EUR
926+0.077 EUR
1092+0.065 EUR
1177+0.061 EUR
1211+0.059 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
BSS138L BSS138L.PDF
BSS138L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
532+0.13 EUR
693+0.1 EUR
787+0.091 EUR
939+0.076 EUR
1080+0.066 EUR
1260+0.057 EUR
3000+0.043 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT1G BSS138L.PDF
BSS138LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 50V
Drain current: 0.2A
On-state resistance: 3.5Ω
Power dissipation: 0.225W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 7922 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
368+0.19 EUR
458+0.16 EUR
652+0.11 EUR
964+0.074 EUR
1092+0.065 EUR
3000+0.055 EUR
6000+0.051 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT3G BSS138L.PDF
BSS138LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
451+0.16 EUR
556+0.13 EUR
762+0.094 EUR
840+0.086 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
BSS138W 5272_BSS138W.pdf bss138w-d.pdf
BSS138W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
379+0.19 EUR
506+0.14 EUR
581+0.12 EUR
806+0.089 EUR
1000+0.083 EUR
3000+0.07 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
LM2904DR2G description lm358-d.pdf
LM2904DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
397+0.18 EUR
451+0.16 EUR
491+0.15 EUR
538+0.13 EUR
667+0.11 EUR
736+0.097 EUR
770+0.093 EUR
2500+0.086 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SFDTU FGH40N60SFD.pdf
FGH40N60SFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
16+4.65 EUR
21+3.5 EUR
Mindestbestellmenge: 14
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FGH40N60SMD FGH40N60SMD.pdf
FGH40N60SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 180nC
Collector current: 40A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 120A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.75 EUR
18+4.09 EUR
30+3.43 EUR
Mindestbestellmenge: 15
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FGH40N60UFDTU FGH40N60UFD.pdf
FGH40N60UFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 40A
Power dissipation: 116W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Pulsed collector current: 120A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.22 EUR
28+2.62 EUR
30+2.49 EUR
120+2.37 EUR
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FGAF40N60UFDTU FGAF40N60UFD.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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BCP53-10T1G BCP53_ser.pdf
BCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
178+0.4 EUR
269+0.27 EUR
304+0.24 EUR
500+0.2 EUR
Mindestbestellmenge: 105
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BCP53-16T1G BCP53_ser.pdf
BCP53-16T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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BC856BDW1T1G bc856bdw1t1-d.pdf
BC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5842 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
977+0.073 EUR
1158+0.062 EUR
1713+0.042 EUR
1977+0.036 EUR
3000+0.031 EUR
Mindestbestellmenge: 500
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BC856BLT1G BC856_7_8.PDF
BC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856_7_8.PDF
BC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BM3T5G bc856bm3-d.pdf
BC856BM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
472+0.15 EUR
538+0.13 EUR
923+0.078 EUR
1348+0.053 EUR
1568+0.046 EUR
Mindestbestellmenge: 417
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MMBT2222ALT1G MMBT2222.PDF
MMBT2222ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 38709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
667+0.11 EUR
977+0.073 EUR
1169+0.061 EUR
1767+0.04 EUR
2119+0.034 EUR
3000+0.026 EUR
9000+0.021 EUR
24000+0.017 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222.PDF
MMBT2222ALT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ATT1G MMBT2222ATT1G.PDF
MMBT2222ATT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
962+0.074 EUR
1276+0.056 EUR
1425+0.05 EUR
1731+0.041 EUR
1909+0.037 EUR
Mindestbestellmenge: 715
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MMBT2222AWT1G description MMBT2222AWT1G.pdf
MMBT2222AWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6573 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
758+0.094 EUR
1087+0.066 EUR
1276+0.056 EUR
1563+0.046 EUR
1812+0.039 EUR
2101+0.034 EUR
2294+0.031 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
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MMBT2222AWT3G MMBT2222AWT1G.pdf
MMBT2222AWT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5408RLG description 1N540x.PDF
1N5408RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
404+0.18 EUR
486+0.15 EUR
527+0.14 EUR
569+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SD FOD3120SD.pdf
FOD3120SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.07 EUR
38+1.9 EUR
43+1.67 EUR
44+1.63 EUR
100+1.42 EUR
250+1.29 EUR
300+1.27 EUR
500+1.22 EUR
Mindestbestellmenge: 31
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FOD3120SDV FOD3120SD.pdf
FOD3120SDV
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG.PDF
MC74AC132DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: AC
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
218+0.33 EUR
232+0.31 EUR
233+0.3 EUR
Mindestbestellmenge: 152
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BCP56-16T1G BCP56_ser.pdf
BCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.13 EUR
Mindestbestellmenge: 63
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BCP56-16T3G bcp56t1-d.pdf
BCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56-16T1G BCP56_ser.pdf
SBCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K 2n7002k-fsc-d.pdf
2N7002K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
323+0.22 EUR
490+0.15 EUR
588+0.12 EUR
738+0.097 EUR
Mindestbestellmenge: 228
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2N7002KT1G 2N7002K.PDF
2N7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
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1N4742A 1N47xxA.PDF
1N4742A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1352+0.053 EUR
1598+0.045 EUR
Mindestbestellmenge: 715
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1N4742ATR 1N47xxA.PDF
1N4742ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
auf Bestellung 774 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
658+0.11 EUR
774+0.093 EUR
Mindestbestellmenge: 455
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