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MM74HC373WM MM74HC373WM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418B3A0C7&compId=MM74HC373WM.pdf?ci_sign=06c61f2783c6a126ae43aef591e054131fb19a6c description Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO20-W
Manufacturer series: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: D latch
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
74+0.97 EUR
99+0.72 EUR
110+0.64 EUR
Mindestbestellmenge: 47
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MM74HC373WMX ONSEMI mm74hc373-d.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO20-W
Manufacturer series: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: D latch
Produkt ist nicht verfügbar
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MC74HC4067ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BF3CB2320D3&compId=MC74HC4067A-D.pdf?ci_sign=b5f26f897b31790df2c023e21296b838bc08c622 Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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SBC856ALT1G SBC856ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
313+0.23 EUR
513+0.14 EUR
893+0.08 EUR
944+0.076 EUR
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HUF75332P3 HUF75332P3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E833D742A75EA&compId=HUF75332P3.pdf?ci_sign=855526c71d0ccd71301d4e548f98cd1abe287b45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 28 Stücke:
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28+2.56 EUR
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NRVUS2MA NRVUS2MA ONSEMI us2aa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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BC849BLT1G BC849BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
520+0.14 EUR
981+0.073 EUR
1309+0.055 EUR
1489+0.048 EUR
1977+0.036 EUR
2395+0.03 EUR
Mindestbestellmenge: 520
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BAW56LT1G BAW56LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D29CBAC0DC7820&compId=BAW56L_SBAW56L.pdf?ci_sign=09b64bf9d7b4afc6037b72c7f025f3fe5358f6a0 Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
Leakage current: 50µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 70V
auf Bestellung 9497 Stücke:
Lieferzeit 14-21 Tag (e)
584+0.12 EUR
1021+0.07 EUR
1413+0.051 EUR
1544+0.046 EUR
1640+0.044 EUR
2337+0.031 EUR
3650+0.02 EUR
3847+0.019 EUR
Mindestbestellmenge: 584
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BAW56LT3G BAW56LT3G ONSEMI baw56lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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BC517-D74Z BC517-D74Z ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3D90B617272611C&compId=BC517_D74Z-DTE.pdf?ci_sign=688bf3ae779b38e32a04f4bba5f0408edc02ec9f Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
166+0.43 EUR
191+0.37 EUR
341+0.21 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 139
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MC1455DR2G MC1455DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE98894044EAEB6D8BF&compId=MC1455.pdf?ci_sign=bfe57248ec3ce33c5fb8f6bcd29a5ec1647bc864 Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
161+0.44 EUR
182+0.39 EUR
266+0.27 EUR
281+0.25 EUR
Mindestbestellmenge: 114
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MBRS260T3G MBRS260T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDF353D7386FA8&compId=MBRS260T3G-DTE.PDF?ci_sign=cbdb4227e02e90e1ca38c903dc3e2c200ef3919a Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
239+0.3 EUR
321+0.22 EUR
365+0.2 EUR
491+0.15 EUR
521+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 173
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FCD5N60TM FCD5N60TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BED40E2BBED35E28&compId=FCD5N60.pdf?ci_sign=8a021e5b6aab51462b2f0cd6b35640ae4f3b8dfd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
40+1.79 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 36
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FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2413 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
58+1.24 EUR
63+1.14 EUR
92+0.78 EUR
97+0.74 EUR
250+0.71 EUR
Mindestbestellmenge: 52
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FQD5N60CTM ONSEMI fqu5n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FQI5N60CTU ONSEMI FAIRS45966-1.pdf?t.download=true&u=5oefqw fqi5n60c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQU5N60CTU ONSEMI fqu5n60c-d.pdf FAIRS45963-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3051M MOC3051M ONSEMI pVersion=0046&contRep=ZT&docId=E1FC127F2A9C85F1A303005056AB0C4F&compId=MOC3052M.pdf?ci_sign=021b717dc7c855b82b51e7846b64dced5971ef5f pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C03C3088320D6&compId=MOC3051M.pdf?ci_sign=18067741cdab88133fc2b9e4f4647cafb114a16b Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
79+0.91 EUR
102+0.71 EUR
121+0.59 EUR
133+0.54 EUR
Mindestbestellmenge: 66
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2N3773G 2N3773G ONSEMI pVersion=0046&contRep=ZT&docId=E1C03E2501F9B0F1A6F5005056AB5A8F&compId=111421.pdf?ci_sign=755c16d4ca64499ee53af42eeed9636b54b2111d description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.45 EUR
11+7.12 EUR
12+6.46 EUR
Mindestbestellmenge: 10
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74VHC245MTCX 74VHC245MTCX ONSEMI 74VHC245-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
99+0.73 EUR
144+0.5 EUR
152+0.47 EUR
250+0.45 EUR
Mindestbestellmenge: 50
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74VHC245MX ONSEMI ONSM-S-A0003546602-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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FCD380N60E ONSEMI fcd380n60e-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLV431ALPG TLV431ALPG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Produkt ist nicht verfügbar
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TLV431ALPRAG TLV431ALPRAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 1551 Stücke:
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122+0.59 EUR
123+0.58 EUR
Mindestbestellmenge: 122
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TLV431ASN1T1G TLV431ASN1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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TLV431ASNT1G TLV431ASNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
164+0.44 EUR
182+0.39 EUR
204+0.35 EUR
264+0.27 EUR
278+0.26 EUR
Mindestbestellmenge: 125
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TLV431BLPRAG TLV431BLPRAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
82+0.88 EUR
100+0.72 EUR
106+0.68 EUR
250+0.67 EUR
Mindestbestellmenge: 34
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TLV431BSN1T1G TLV431BSN1T1G ONSEMI tlv431a-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
168+0.43 EUR
187+0.38 EUR
217+0.33 EUR
241+0.3 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 143
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TLV431BSNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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TLV431CSN1T1G TLV431CSN1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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NCP45521IMNTWG-H NCP45521IMNTWG-H ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CB25395612A13D1&compId=NCP45520_1.pdf?ci_sign=febe9f0d41f05ad3266afa456de1f6b1eabe2227 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 9.5/22.5mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
Case: DFN8
Type of integrated circuit: power switch
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
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BD237G BD237G ONSEMI bd237-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
80+0.9 EUR
94+0.77 EUR
111+0.65 EUR
117+0.61 EUR
250+0.59 EUR
Mindestbestellmenge: 50
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FIN1001M5X FIN1001M5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196CD128D1B6259&compId=FIN1001.pdf?ci_sign=53b6431c1dea3dff1562add3767cb12df05d7f35 Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line driver; translator
auf Bestellung 5680 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
66+1.09 EUR
76+0.94 EUR
81+0.89 EUR
100+0.86 EUR
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2N6517BU 2N6517BU ONSEMI 2n6515-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 0.5A
Current gain: 20...200
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
auf Bestellung 5080 Stücke:
Lieferzeit 14-21 Tag (e)
940+0.077 EUR
980+0.073 EUR
1040+0.069 EUR
2000+0.067 EUR
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2N6517TA 2N6517TA ONSEMI 2n6515-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
291+0.25 EUR
347+0.21 EUR
454+0.16 EUR
558+0.13 EUR
Mindestbestellmenge: 209
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2N6520TA 2N6520TA ONSEMI 2n6515-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
455+0.16 EUR
615+0.12 EUR
655+0.11 EUR
Mindestbestellmenge: 209
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MMUN2234LT1G MMUN2234LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FB98DB400D0749&compId=MMUN2234.PDF?ci_sign=878eea177f84a5696cad3f7f0cf709eeb1782d0f Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 3854 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
926+0.077 EUR
1462+0.049 EUR
1954+0.037 EUR
3547+0.02 EUR
3760+0.019 EUR
Mindestbestellmenge: 556
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FJPF13007H2TU FJPF13007H2TU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9D8E57CEB29720D3&compId=FJPF13007.pdf?ci_sign=f5478252100497afabe7c8c20179cb3787e946d8 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Current gain: 8...60
Collector current: 8A
Power dissipation: 40W
Collector-emitter voltage: 400V
Frequency: 4MHz
Produkt ist nicht verfügbar
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MUR1620CTG MUR1620CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
39+1.86 EUR
46+1.57 EUR
61+1.19 EUR
65+1.12 EUR
66+1.09 EUR
100+1.07 EUR
Mindestbestellmenge: 29
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74ACT04SC 74ACT04SC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8DE183B22F75EA&compId=74ACT04SC.pdf?ci_sign=3f05fdd77791fcf8af8d4475c5b7e315c48cdc36 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: ACT
Number of inputs: 1
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
147+0.49 EUR
161+0.44 EUR
Mindestbestellmenge: 107
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74ACT04SCX 74ACT04SCX ONSEMI 74ACT04-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
139+0.52 EUR
164+0.44 EUR
175+0.41 EUR
185+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 120
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MC74ACT04DR2G MC74ACT04DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A6E0C7&compId=MC74ACT04DR2G.pdf?ci_sign=9a00c6f3b7838b8033532f3b5fcaa4a65af1f7eb Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of gate: NOT
Family: ACT
Number of inputs: 1
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
178+0.4 EUR
199+0.36 EUR
350+0.2 EUR
371+0.19 EUR
Mindestbestellmenge: 143
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FCH104N60F FCH104N60F ONSEMI fch104n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.85 EUR
12+6.12 EUR
30+6.11 EUR
Mindestbestellmenge: 11
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FCH104N60F-F085 ONSEMI fch104n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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AFGB40T65SQDN AFGB40T65SQDN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A85ACB5D0800C7&compId=AFGB40T65SQDN.PDF?ci_sign=f87b48aa4a99b6859db13e0a6c839d811eac1dd4 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
Produkt ist nicht verfügbar
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TIP122G TIP122G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE85CBB03EE06260D5&compId=TIP12xG.PDF?ci_sign=448ad934d76d962c4f349efb3a2ab3dbfdffec9a Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
85+0.84 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 65
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MBR40250G MBR40250G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A12F0C25A8259&compId=MBR40250G.PDF?ci_sign=cc98a285c8ce827bc1536ca9af3bf5540a2193f3 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.86V
Max. load current: 80A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
39+1.86 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 36
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MBR40250TG MBR40250TG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688C17F7ADD6745&compId=MBR40250xx.PDF?ci_sign=c24c259d3e43463952584f4686986b02bd8c1aa2 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.86V
Max. load current: 80A
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 38
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MJ11015G MJ11015G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD06DD5BEF7C469&compId=MJ11015.PDF?ci_sign=1b5754fa5687a6a406255f198426aba85fd3c2a7 description Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.04 EUR
Mindestbestellmenge: 9
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FDP8N50NZ ONSEMI ONSM-S-A0003584403-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDA28N50 FDA28N50 ONSEMI fda28n50-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.75 EUR
19+3.89 EUR
20+3.68 EUR
Mindestbestellmenge: 13
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1N5359BG 1N5359BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
196+0.37 EUR
253+0.28 EUR
291+0.25 EUR
307+0.23 EUR
321+0.22 EUR
Mindestbestellmenge: 143
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1N5359BRLG 1N5359BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 description Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
158+0.45 EUR
179+0.4 EUR
240+0.3 EUR
304+0.24 EUR
321+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 129
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FST3253MTCX FST3253MTCX ONSEMI ONSM-S-A0003586663-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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MC33151DG MC33151DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688F7AB2C106745&compId=MC33151_MC34151.PDF?ci_sign=59783fcc7a9f016d81531dc5126412ac48de72a3 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Output current: -1.5...1.5A
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.55 EUR
61+1.19 EUR
65+1.1 EUR
68+1.06 EUR
69+1.04 EUR
72+1 EUR
Mindestbestellmenge: 29
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MC33151PG MC33151PG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688F7AB2C106745&compId=MC33151_MC34151.PDF?ci_sign=59783fcc7a9f016d81531dc5126412ac48de72a3 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Output current: -1.5...1.5A
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
Mindestbestellmenge: 44
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MOC3022VM MOC3022VM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC633603BFFE27&compId=MOC3022VM.pdf?ci_sign=6f42708b598eead3353eace05ab45210d037414f Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
112+0.64 EUR
192+0.37 EUR
204+0.35 EUR
Mindestbestellmenge: 79
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ES1J ES1J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Capacitance: 8pF
Features of semiconductor devices: fast switching
Power dissipation: 1.47W
auf Bestellung 6971 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
252+0.28 EUR
327+0.22 EUR
365+0.2 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 179
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LM833DR2G LM833DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78A9B2C9945024745&compId=LM833DR2G.PDF?ci_sign=f51f1cb3f34afe14fe4c0c34e5c269d20a1726bc Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
250+0.29 EUR
283+0.25 EUR
329+0.22 EUR
400+0.18 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
2N5550TA 2N5550TA ONSEMI 2N5550-D.pdf FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Current gain: 50...200
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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MM74HC373WM description pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418B3A0C7&compId=MM74HC373WM.pdf?ci_sign=06c61f2783c6a126ae43aef591e054131fb19a6c
MM74HC373WM
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO20-W
Manufacturer series: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: D latch
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
74+0.97 EUR
99+0.72 EUR
110+0.64 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC373WMX mm74hc373-d.pdf
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO20-W
Manufacturer series: HC
Trigger: level-triggered
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Number of channels: 8
Kind of integrated circuit: D latch
Produkt ist nicht verfügbar
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MC74HC4067ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BF3CB2320D3&compId=MC74HC4067A-D.pdf?ci_sign=b5f26f897b31790df2c023e21296b838bc08c622
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856ALT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC856ALT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
313+0.23 EUR
513+0.14 EUR
893+0.08 EUR
944+0.076 EUR
Mindestbestellmenge: 193
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HUF75332P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E833D742A75EA&compId=HUF75332P3.pdf?ci_sign=855526c71d0ccd71301d4e548f98cd1abe287b45
HUF75332P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Case: TO220AB
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
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NRVUS2MA us2aa-d.pdf
NRVUS2MA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC849BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1
BC849BLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
520+0.14 EUR
981+0.073 EUR
1309+0.055 EUR
1489+0.048 EUR
1977+0.036 EUR
2395+0.03 EUR
Mindestbestellmenge: 520
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BAW56LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D29CBAC0DC7820&compId=BAW56L_SBAW56L.pdf?ci_sign=09b64bf9d7b4afc6037b72c7f025f3fe5358f6a0
BAW56LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Features of semiconductor devices: fast switching
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 6ns
Leakage current: 50µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Max. off-state voltage: 70V
auf Bestellung 9497 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
584+0.12 EUR
1021+0.07 EUR
1413+0.051 EUR
1544+0.046 EUR
1640+0.044 EUR
2337+0.031 EUR
3650+0.02 EUR
3847+0.019 EUR
Mindestbestellmenge: 584
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BAW56LT3G baw56lt1-d.pdf
BAW56LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BC517-D74Z pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3D90B617272611C&compId=BC517_D74Z-DTE.pdf?ci_sign=688bf3ae779b38e32a04f4bba5f0408edc02ec9f
BC517-D74Z
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
166+0.43 EUR
191+0.37 EUR
341+0.21 EUR
569+0.13 EUR
603+0.12 EUR
Mindestbestellmenge: 139
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MC1455DR2G pVersion=0046&contRep=ZT&docId=005056AB82531EE98894044EAEB6D8BF&compId=MC1455.pdf?ci_sign=bfe57248ec3ce33c5fb8f6bcd29a5ec1647bc864
MC1455DR2G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
auf Bestellung 1580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
161+0.44 EUR
182+0.39 EUR
266+0.27 EUR
281+0.25 EUR
Mindestbestellmenge: 114
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MBRS260T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDF353D7386FA8&compId=MBRS260T3G-DTE.PDF?ci_sign=cbdb4227e02e90e1ca38c903dc3e2c200ef3919a
MBRS260T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
239+0.3 EUR
321+0.22 EUR
365+0.2 EUR
491+0.15 EUR
521+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 173
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FCD5N60TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BED40E2BBED35E28&compId=FCD5N60.pdf?ci_sign=8a021e5b6aab51462b2f0cd6b35640ae4f3b8dfd
FCD5N60TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
40+1.79 EUR
44+1.63 EUR
61+1.19 EUR
65+1.12 EUR
500+1.07 EUR
Mindestbestellmenge: 36
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FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
58+1.24 EUR
63+1.14 EUR
92+0.78 EUR
97+0.74 EUR
250+0.71 EUR
Mindestbestellmenge: 52
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FQD5N60CTM fqu5n60c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQI5N60CTU FAIRS45966-1.pdf?t.download=true&u=5oefqw fqi5n60c-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQU5N60CTU fqu5n60c-d.pdf FAIRS45963-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3051M pVersion=0046&contRep=ZT&docId=E1FC127F2A9C85F1A303005056AB0C4F&compId=MOC3052M.pdf?ci_sign=021b717dc7c855b82b51e7846b64dced5971ef5f pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C03C3088320D6&compId=MOC3051M.pdf?ci_sign=18067741cdab88133fc2b9e4f4647cafb114a16b
MOC3051M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
79+0.91 EUR
102+0.71 EUR
121+0.59 EUR
133+0.54 EUR
Mindestbestellmenge: 66
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2N3773G description pVersion=0046&contRep=ZT&docId=E1C03E2501F9B0F1A6F5005056AB5A8F&compId=111421.pdf?ci_sign=755c16d4ca64499ee53af42eeed9636b54b2111d
2N3773G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.45 EUR
11+7.12 EUR
12+6.46 EUR
Mindestbestellmenge: 10
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74VHC245MTCX 74VHC245-D.PDF
74VHC245MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
99+0.73 EUR
144+0.5 EUR
152+0.47 EUR
250+0.45 EUR
Mindestbestellmenge: 50
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74VHC245MX ONSM-S-A0003546602-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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FCD380N60E fcd380n60e-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLV431ALPG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431ALPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Produkt ist nicht verfügbar
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TLV431ALPRAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431ALPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
123+0.58 EUR
Mindestbestellmenge: 122
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TLV431ASN1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431ASN1T1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV431ASNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431ASNT1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
164+0.44 EUR
182+0.39 EUR
204+0.35 EUR
264+0.27 EUR
278+0.26 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
TLV431BLPRAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431BLPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
82+0.88 EUR
100+0.72 EUR
106+0.68 EUR
250+0.67 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
TLV431BSN1T1G tlv431a-d.pdf
TLV431BSN1T1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
168+0.43 EUR
187+0.38 EUR
217+0.33 EUR
241+0.3 EUR
327+0.22 EUR
348+0.21 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
TLV431BSNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLV431CSN1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BAC248AB6520CE&compId=TLV431_NCV431_SCV431.PDF?ci_sign=777d6521122e7abe7cc16b1038a0783e0cbfe67d
TLV431CSN1T1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP45521IMNTWG-H pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CB25395612A13D1&compId=NCP45520_1.pdf?ci_sign=febe9f0d41f05ad3266afa456de1f6b1eabe2227
NCP45521IMNTWG-H
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
On-state resistance: 9.5/22.5mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
Case: DFN8
Type of integrated circuit: power switch
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BD237G bd237-d.pdf
BD237G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
80+0.9 EUR
94+0.77 EUR
111+0.65 EUR
117+0.61 EUR
250+0.59 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FIN1001M5X pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196CD128D1B6259&compId=FIN1001.pdf?ci_sign=53b6431c1dea3dff1562add3767cb12df05d7f35
FIN1001M5X
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line driver; translator
auf Bestellung 5680 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
66+1.09 EUR
76+0.94 EUR
81+0.89 EUR
100+0.86 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
2N6517BU 2n6515-d.pdf
2N6517BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Collector current: 0.5A
Current gain: 20...200
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
auf Bestellung 5080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
940+0.077 EUR
980+0.073 EUR
1040+0.069 EUR
2000+0.067 EUR
Mindestbestellmenge: 940
Im Einkaufswagen  Stück im Wert von  UAH
2N6517TA 2n6515-d.pdf
2N6517TA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
291+0.25 EUR
347+0.21 EUR
454+0.16 EUR
558+0.13 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
2N6520TA 2n6515-d.pdf
2N6520TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
455+0.16 EUR
615+0.12 EUR
655+0.11 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MMUN2234LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0FB98DB400D0749&compId=MMUN2234.PDF?ci_sign=878eea177f84a5696cad3f7f0cf709eeb1782d0f
MMUN2234LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 3854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
926+0.077 EUR
1462+0.049 EUR
1954+0.037 EUR
3547+0.02 EUR
3760+0.019 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
FJPF13007H2TU pVersion=0046&contRep=ZT&docId=005056AB281E1EDD9D8E57CEB29720D3&compId=FJPF13007.pdf?ci_sign=f5478252100497afabe7c8c20179cb3787e946d8
FJPF13007H2TU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Current gain: 8...60
Collector current: 8A
Power dissipation: 40W
Collector-emitter voltage: 400V
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUR1620CTG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b
MUR1620CTG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
39+1.86 EUR
46+1.57 EUR
61+1.19 EUR
65+1.12 EUR
66+1.09 EUR
100+1.07 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
74ACT04SC pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8DE183B22F75EA&compId=74ACT04SC.pdf?ci_sign=3f05fdd77791fcf8af8d4475c5b7e315c48cdc36
74ACT04SC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: ACT
Number of inputs: 1
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
147+0.49 EUR
161+0.44 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
74ACT04SCX 74ACT04-D.PDF
74ACT04SCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
139+0.52 EUR
164+0.44 EUR
175+0.41 EUR
185+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT04DR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0485418A6E0C7&compId=MC74ACT04DR2G.pdf?ci_sign=9a00c6f3b7838b8033532f3b5fcaa4a65af1f7eb
MC74ACT04DR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of gate: NOT
Family: ACT
Number of inputs: 1
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
178+0.4 EUR
199+0.36 EUR
350+0.2 EUR
371+0.19 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
FCH104N60F fch104n60f-d.pdf
FCH104N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.85 EUR
12+6.12 EUR
30+6.11 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FCH104N60F-F085 fch104n60f_f085-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AFGB40T65SQDN pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A85ACB5D0800C7&compId=AFGB40T65SQDN.PDF?ci_sign=f87b48aa4a99b6859db13e0a6c839d811eac1dd4
AFGB40T65SQDN
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP122G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE85CBB03EE06260D5&compId=TIP12xG.PDF?ci_sign=448ad934d76d962c4f349efb3a2ab3dbfdffec9a
TIP122G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
85+0.84 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
MBR40250G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A12F0C25A8259&compId=MBR40250G.PDF?ci_sign=cc98a285c8ce827bc1536ca9af3bf5540a2193f3
MBR40250G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.86V
Max. load current: 80A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
39+1.86 EUR
44+1.64 EUR
46+1.56 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
MBR40250TG pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688C17F7ADD6745&compId=MBR40250xx.PDF?ci_sign=c24c259d3e43463952584f4686986b02bd8c1aa2
MBR40250TG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.86V
Max. load current: 80A
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
MJ11015G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD06DD5BEF7C469&compId=MJ11015.PDF?ci_sign=1b5754fa5687a6a406255f198426aba85fd3c2a7
MJ11015G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.04 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FDP8N50NZ ONSM-S-A0003584403-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDA28N50 fda28n50-d.pdf
FDA28N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.75 EUR
19+3.89 EUR
20+3.68 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
1N5359BG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5359BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 1154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
196+0.37 EUR
253+0.28 EUR
291+0.25 EUR
307+0.23 EUR
321+0.22 EUR
Mindestbestellmenge: 143
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1N5359BRLG description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5359BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 2533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
158+0.45 EUR
179+0.4 EUR
240+0.3 EUR
304+0.24 EUR
321+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 129
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FST3253MTCX ONSM-S-A0003586663-1.pdf?t.download=true&u=5oefqw
FST3253MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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MC33151DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688F7AB2C106745&compId=MC33151_MC34151.PDF?ci_sign=59783fcc7a9f016d81531dc5126412ac48de72a3
MC33151DG
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: SMD
Operating temperature: -40...85°C
Protection: undervoltage UVP
Output current: -1.5...1.5A
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of package: tube
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.55 EUR
61+1.19 EUR
65+1.1 EUR
68+1.06 EUR
69+1.04 EUR
72+1 EUR
Mindestbestellmenge: 29
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MC33151PG description pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688F7AB2C106745&compId=MC33151_MC34151.PDF?ci_sign=59783fcc7a9f016d81531dc5126412ac48de72a3
MC33151PG
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Mounting: THT
Operating temperature: -40...85°C
Protection: undervoltage UVP
Output current: -1.5...1.5A
Pulse fall time: 30ns
Impulse rise time: 30ns
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Kind of package: tube
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Kind of output: inverting
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
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MOC3022VM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC633603BFFE27&compId=MOC3022VM.pdf?ci_sign=6f42708b598eead3353eace05ab45210d037414f
MOC3022VM
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
112+0.64 EUR
192+0.37 EUR
204+0.35 EUR
Mindestbestellmenge: 79
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ES1J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9
ES1J
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Capacitance: 8pF
Features of semiconductor devices: fast switching
Power dissipation: 1.47W
auf Bestellung 6971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
252+0.28 EUR
327+0.22 EUR
365+0.2 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 179
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LM833DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78A9B2C9945024745&compId=LM833DR2G.PDF?ci_sign=f51f1cb3f34afe14fe4c0c34e5c269d20a1726bc
LM833DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
250+0.29 EUR
283+0.25 EUR
329+0.22 EUR
400+0.18 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 200
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2N5550TA 2N5550-D.pdf FAIR-S-A0000605469-1.pdf?t.download=true&u=5oefqw
2N5550TA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Current gain: 50...200
Frequency: 100...300MHz
Produkt ist nicht verfügbar
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