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BS170-D75Z BS170-D75Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 5999 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
253+0.28 EUR
329+0.22 EUR
481+0.15 EUR
Mindestbestellmenge: 209
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BS170-D26Z BS170-D26Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2150 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
211+0.34 EUR
250+0.29 EUR
291+0.25 EUR
341+0.21 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 167
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BS170-D27Z BS170-D27Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4390 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
222+0.32 EUR
278+0.26 EUR
334+0.21 EUR
394+0.18 EUR
569+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
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BC807-40LT1G BC807-40LT1G ONSEMI BC807-xxL.pdf description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 4818 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
794+0.09 EUR
1169+0.061 EUR
1382+0.052 EUR
1977+0.036 EUR
2253+0.032 EUR
2428+0.029 EUR
3000+0.026 EUR
Mindestbestellmenge: 500
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BC807-40LT3G BC807-40LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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CAT24C08C4ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C4CTR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C5ATR ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD14010STU BD14010STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
Produkt ist nicht verfügbar
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BD140G BD140G ONSEMI BD136G_BD140G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
88+0.81 EUR
94+0.76 EUR
Mindestbestellmenge: 49
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MMBD1401 MMBD1401 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
642+0.11 EUR
772+0.093 EUR
845+0.085 EUR
1040+0.069 EUR
Mindestbestellmenge: 417
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MMBD1403 MMBD1403 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1404 MMBD1404 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 834 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
417+0.17 EUR
455+0.16 EUR
590+0.12 EUR
666+0.11 EUR
834+0.086 EUR
Mindestbestellmenge: 358
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MMBD1404A MMBD1404A ONSEMI mmbd1405a-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 MMBD1405 ONSEMI mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
382+0.19 EUR
508+0.14 EUR
577+0.12 EUR
765+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 295
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2N3904BU 2N3904BU ONSEMI 2N3904BU-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 4866 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
313+0.23 EUR
360+0.2 EUR
540+0.13 EUR
645+0.11 EUR
935+0.077 EUR
1071+0.067 EUR
Mindestbestellmenge: 250
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2N3904TFR 2N3904TFR ONSEMI pzt3904-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
625+0.11 EUR
771+0.093 EUR
Mindestbestellmenge: 385
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BSS138L BSS138L ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 11319 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
527+0.14 EUR
669+0.11 EUR
748+0.096 EUR
878+0.082 EUR
997+0.072 EUR
1145+0.062 EUR
3000+0.049 EUR
6000+0.041 EUR
Mindestbestellmenge: 417
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BSS138LT1G BSS138LT1G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 16797 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
435+0.16 EUR
561+0.13 EUR
807+0.089 EUR
981+0.073 EUR
1109+0.064 EUR
1226+0.058 EUR
3000+0.052 EUR
6000+0.049 EUR
Mindestbestellmenge: 264
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BSS138LT3G BSS138LT3G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8482 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
455+0.16 EUR
642+0.11 EUR
1034+0.069 EUR
Mindestbestellmenge: 295
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BSS138W BSS138W ONSEMI bss138w-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
321+0.22 EUR
391+0.18 EUR
596+0.12 EUR
689+0.1 EUR
879+0.081 EUR
1000+0.079 EUR
Mindestbestellmenge: 209
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MMBFJ113 MMBFJ113 ONSEMI J111.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
258+0.28 EUR
321+0.22 EUR
379+0.19 EUR
443+0.16 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
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1N4448TR 1N4448TR ONSEMI 1N91x_1N4x48.PDF Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 9341 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1250+0.057 EUR
1880+0.038 EUR
2273+0.031 EUR
2907+0.025 EUR
3547+0.02 EUR
4311+0.017 EUR
4762+0.015 EUR
Mindestbestellmenge: 625
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LM2904DR2G LM2904DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7472 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
447+0.16 EUR
478+0.15 EUR
625+0.11 EUR
1000+0.079 EUR
1300+0.076 EUR
2500+0.073 EUR
Mindestbestellmenge: 239
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FGH40N60SFDTU FGH40N60SFDTU ONSEMI FGH40N60SFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.19 EUR
17+4.43 EUR
30+3.42 EUR
90+3.26 EUR
Mindestbestellmenge: 14
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FGH40N60SMD FGH40N60SMD ONSEMI FGH40N60SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.28 EUR
15+5.02 EUR
17+4.42 EUR
30+3.66 EUR
120+3.43 EUR
Mindestbestellmenge: 14
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FGH40N60UFDTU FGH40N60UFDTU ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.05 EUR
25+2.86 EUR
30+2.57 EUR
120+2.39 EUR
Mindestbestellmenge: 24
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FGAF40N60UFDTU ONSEMI FGAF40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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MC78LC33NTRG MC78LC33NTRG ONSEMI MC78LCxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
172+0.42 EUR
194+0.37 EUR
Mindestbestellmenge: 139
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BCP53-10T1G BCP53-10T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
164+0.44 EUR
232+0.31 EUR
268+0.27 EUR
304+0.24 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 107
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BCP53-16T1G BCP53-16T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
156+0.46 EUR
173+0.41 EUR
266+0.27 EUR
327+0.22 EUR
397+0.18 EUR
Mindestbestellmenge: 139
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LM2574DW-ADJR2G LM2574DW-ADJR2G ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.52 EUR
36+2.02 EUR
39+1.86 EUR
42+1.72 EUR
50+1.7 EUR
Mindestbestellmenge: 29
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LM2574N-5G LM2574N-5G ONSEMI LM2574.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
59+1.22 EUR
69+1.04 EUR
100+1 EUR
250+0.99 EUR
Mindestbestellmenge: 45
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LM2574N-ADJG LM2574N-ADJG ONSEMI LM2574.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.87 EUR
52+1.39 EUR
59+1.23 EUR
Mindestbestellmenge: 39
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BC856BDW1T1G BC856BDW1T1G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6649 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
642+0.11 EUR
875+0.082 EUR
1038+0.069 EUR
1548+0.046 EUR
1819+0.039 EUR
3000+0.032 EUR
Mindestbestellmenge: 500
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BC856BDW1T3G BC856BDW1T3G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT1G BC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3T5G ONSEMI bc856bm3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1981 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
511+0.14 EUR
582+0.12 EUR
1047+0.068 EUR
1544+0.046 EUR
1793+0.04 EUR
Mindestbestellmenge: 417
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MMBT2222ALT1G MMBT2222ALT1G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 55846 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
834+0.086 EUR
1525+0.047 EUR
2213+0.032 EUR
2539+0.028 EUR
3049+0.023 EUR
6000+0.021 EUR
9000+0.02 EUR
24000+0.018 EUR
Mindestbestellmenge: 500
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MMBT2222ALT3G MMBT2222ALT3G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G ONSEMI MMBT2222ATT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2578 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
1471+0.049 EUR
1656+0.043 EUR
1755+0.041 EUR
2025+0.035 EUR
2156+0.033 EUR
2233+0.032 EUR
Mindestbestellmenge: 455
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MMBT2222AWT1G MMBT2222AWT1G ONSEMI MMBT2222AWT1G.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6639 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
695+0.1 EUR
1047+0.068 EUR
1273+0.056 EUR
1954+0.037 EUR
2305+0.031 EUR
3000+0.025 EUR
6000+0.022 EUR
Mindestbestellmenge: 500
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MMBT2222AWT3G MMBT2222AWT3G ONSEMI MMBT2222AWT1G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG 1N5408RLG ONSEMI 1N540x.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
397+0.18 EUR
477+0.15 EUR
521+0.14 EUR
569+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 200
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FOD3120 FOD3120 ONSEMI FOD3120.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.13 EUR
43+1.67 EUR
50+1.46 EUR
54+1.34 EUR
Mindestbestellmenge: 34
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FOD3120SD FOD3120SD ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
35+2.1 EUR
38+1.92 EUR
100+1.36 EUR
250+1.13 EUR
500+0.97 EUR
Mindestbestellmenge: 28
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FOD3120SDV FOD3120SDV ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E9389CADA11C&compId=MC74AC132DG.PDF?ci_sign=ce61ccd4472383711336117bf60a2304e63cb90f Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
160+0.45 EUR
177+0.41 EUR
190+0.38 EUR
192+0.37 EUR
Mindestbestellmenge: 114
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BCP56-16T1G BCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 8684 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
182+0.39 EUR
247+0.29 EUR
278+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
3000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 120
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BCP56-16T3G BCP56-16T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
167+0.43 EUR
242+0.3 EUR
285+0.25 EUR
348+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
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SBCP56-16T1G SBCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K ONSEMI 2n7002k-fsc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4423 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
379+0.19 EUR
583+0.12 EUR
694+0.1 EUR
997+0.072 EUR
1127+0.063 EUR
Mindestbestellmenge: 228
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2N7002KT1G 2N7002KT1G ONSEMI 2N7002K.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1042+0.069 EUR
1104+0.065 EUR
1389+0.051 EUR
1588+0.045 EUR
2101+0.034 EUR
2337+0.031 EUR
Mindestbestellmenge: 715
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2N7002KW 2N7002KW ONSEMI 2N7002KW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
auf Bestellung 2918 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
432+0.17 EUR
627+0.11 EUR
738+0.097 EUR
1019+0.07 EUR
1155+0.062 EUR
Mindestbestellmenge: 295
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1N4742A 1N4742A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
465+0.16 EUR
Mindestbestellmenge: 465
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1N4742ATR 1N4742ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
544+0.13 EUR
650+0.11 EUR
991+0.072 EUR
Mindestbestellmenge: 455
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FOD817B FOD817B ONSEMI FOD817A300W.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
241+0.3 EUR
272+0.26 EUR
414+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 193
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FOD817B300 FOD817B300 ONSEMI FOD814ASD.pdf FOD817B300.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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FOD817B3SD FOD817B3SD ONSEMI FOD817ASD.pdf FOD817B3SD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
auf Bestellung 1808 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
193+0.37 EUR
241+0.3 EUR
268+0.27 EUR
500+0.21 EUR
Mindestbestellmenge: 136
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BS170-D75Z BS170,MMBF170.PDF
BS170-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 5999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
253+0.28 EUR
329+0.22 EUR
481+0.15 EUR
Mindestbestellmenge: 209
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BS170-D26Z BS170,MMBF170.PDF
BS170-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 2150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
211+0.34 EUR
250+0.29 EUR
291+0.25 EUR
341+0.21 EUR
417+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 167
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BS170-D27Z BS170,MMBF170.PDF
BS170-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 4390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
222+0.32 EUR
278+0.26 EUR
334+0.21 EUR
394+0.18 EUR
569+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 157
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BC807-40LT1G description BC807-xxL.pdf
BC807-40LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 4818 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
794+0.09 EUR
1169+0.061 EUR
1382+0.052 EUR
1977+0.036 EUR
2253+0.032 EUR
2428+0.029 EUR
3000+0.026 EUR
Mindestbestellmenge: 500
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BC807-40LT3G bc807-16lt1-d.pdf
BC807-40LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08C4ATR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C4CTR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08C5ATR CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD14010STU BD136_138_140.pdf
BD14010STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Current gain: 63...160
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Power dissipation: 12.5W
Collector current: 1.5A
Produkt ist nicht verfügbar
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BD140G BD136G_BD140G.PDF
BD140G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Current gain: 40...250
Collector-emitter voltage: 80V
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
Mounting: THT
Case: TO225
Power dissipation: 12.5W
Collector current: 1.5A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
88+0.81 EUR
94+0.76 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1401 mmbd1405-d.pdf
MMBD1401
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
642+0.11 EUR
772+0.093 EUR
845+0.085 EUR
1040+0.069 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1404 mmbd1405-d.pdf
MMBD1404
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 834 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
417+0.17 EUR
455+0.16 EUR
590+0.12 EUR
666+0.11 EUR
834+0.086 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
MMBD1404A mmbd1405a-d.pdf
MMBD1404A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Max. off-state voltage: 175V
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.6A
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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MMBD1405 mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw
MMBD1405
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Max. off-state voltage: 200V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Type of diode: switching
Capacitance: 2pF
Reverse recovery time: 50ns
Leakage current: 0.1µA
Load current: 0.2A
Power dissipation: 0.35W
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
382+0.19 EUR
508+0.14 EUR
577+0.12 EUR
765+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 295
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2N3904BU 2N3904BU-DTE.pdf
2N3904BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 4866 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
313+0.23 EUR
360+0.2 EUR
540+0.13 EUR
645+0.11 EUR
935+0.077 EUR
1071+0.067 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
2N3904TFR pzt3904-d.pdf
2N3904TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
625+0.11 EUR
771+0.093 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BSS138L BSS138L.PDF
BSS138L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 11319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
527+0.14 EUR
669+0.11 EUR
748+0.096 EUR
878+0.082 EUR
997+0.072 EUR
1145+0.062 EUR
3000+0.049 EUR
6000+0.041 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT1G BSS138L.PDF
BSS138LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 16797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
435+0.16 EUR
561+0.13 EUR
807+0.089 EUR
981+0.073 EUR
1109+0.064 EUR
1226+0.058 EUR
3000+0.052 EUR
6000+0.049 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
BSS138LT3G BSS138L.PDF
BSS138LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8482 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
455+0.16 EUR
642+0.11 EUR
1034+0.069 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BSS138W bss138w-d.pdf
BSS138W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
321+0.22 EUR
391+0.18 EUR
596+0.12 EUR
689+0.1 EUR
879+0.081 EUR
1000+0.079 EUR
Mindestbestellmenge: 209
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MMBFJ113 J111.pdf
MMBFJ113
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 100Ω
auf Bestellung 2955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
258+0.28 EUR
321+0.22 EUR
379+0.19 EUR
443+0.16 EUR
538+0.13 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
1N4448TR 1N91x_1N4x48.PDF
1N4448TR
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Kind of package: reel; tape
Power dissipation: 0.5W
auf Bestellung 9341 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1250+0.057 EUR
1880+0.038 EUR
2273+0.031 EUR
2907+0.025 EUR
3547+0.02 EUR
4311+0.017 EUR
4762+0.015 EUR
Mindestbestellmenge: 625
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LM2904DR2G description lm358-d.pdf
LM2904DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7472 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
447+0.16 EUR
478+0.15 EUR
625+0.11 EUR
1000+0.079 EUR
1300+0.076 EUR
2500+0.073 EUR
Mindestbestellmenge: 239
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FGH40N60SFDTU FGH40N60SFD.pdf
FGH40N60SFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
17+4.43 EUR
30+3.42 EUR
90+3.26 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD FGH40N60SMD.pdf
FGH40N60SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
15+5.02 EUR
17+4.42 EUR
30+3.66 EUR
120+3.43 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60UFDTU FGH40N60UFD.pdf
FGH40N60UFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.05 EUR
25+2.86 EUR
30+2.57 EUR
120+2.39 EUR
Mindestbestellmenge: 24
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FGAF40N60UFDTU FGAF40N60UFD.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 20A
Produkt ist nicht verfügbar
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MC78LC33NTRG MC78LCxx.pdf
MC78LC33NTRG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 53mV
Output voltage: 3.3V
Output current: 80mA
Case: TSOT23-5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 4.3...12V
auf Bestellung 2790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
172+0.42 EUR
194+0.37 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
BCP53-10T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
BCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
164+0.44 EUR
232+0.31 EUR
268+0.27 EUR
304+0.24 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
BCP53-16T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF6447155D9820&compId=BCP53_ser.pdf?ci_sign=8f342b934d9aeecf2d8169dc8963df0889f15590
BCP53-16T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
156+0.46 EUR
173+0.41 EUR
266+0.27 EUR
327+0.22 EUR
397+0.18 EUR
Mindestbestellmenge: 139
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LM2574DW-ADJR2G LM2574.pdf
LM2574DW-ADJR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.52 EUR
36+2.02 EUR
39+1.86 EUR
42+1.72 EUR
50+1.7 EUR
Mindestbestellmenge: 29
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LM2574N-5G description LM2574.pdf
LM2574N-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 457 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
59+1.22 EUR
69+1.04 EUR
100+1 EUR
250+0.99 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
LM2574N-ADJG LM2574.pdf
LM2574N-ADJG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
52+1.39 EUR
59+1.23 EUR
Mindestbestellmenge: 39
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BC856BDW1T1G bc856bdw1t1-d.pdf
BC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 6649 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
642+0.11 EUR
875+0.082 EUR
1038+0.069 EUR
1548+0.046 EUR
1819+0.039 EUR
3000+0.032 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BC856BDW1T3G bc856bdw1t1-d.pdf
BC856BDW1T3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT1G BC856_7_8.PDF
BC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BLT3G BC856_7_8.PDF
BC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BM3T5G bc856bm3-d.pdf
BC856BM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
582+0.12 EUR
1047+0.068 EUR
1544+0.046 EUR
1793+0.04 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ALT1G MMBT2222.PDF
MMBT2222ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 55846 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
834+0.086 EUR
1525+0.047 EUR
2213+0.032 EUR
2539+0.028 EUR
3049+0.023 EUR
6000+0.021 EUR
9000+0.02 EUR
24000+0.018 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ALT3G MMBT2222.PDF
MMBT2222ALT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222ATT1G MMBT2222ATT1G.PDF
MMBT2222ATT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2578 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
1471+0.049 EUR
1656+0.043 EUR
1755+0.041 EUR
2025+0.035 EUR
2156+0.033 EUR
2233+0.032 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222AWT1G description MMBT2222AWT1G.pdf
MMBT2222AWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 6639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
695+0.1 EUR
1047+0.068 EUR
1273+0.056 EUR
1954+0.037 EUR
2305+0.031 EUR
3000+0.025 EUR
6000+0.022 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2222AWT3G MMBT2222AWT1G.pdf
MMBT2222AWT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5408RLG description 1N540x.PDF
1N5408RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Mounting: THT
Leakage current: 50µA
Max. forward voltage: 1V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: reel; tape
Case: DO27
Type of diode: rectifying
Semiconductor structure: single diode
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
397+0.18 EUR
477+0.15 EUR
521+0.14 EUR
569+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120 FOD3120.pdf
FOD3120
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; DIP8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 35kV/μs
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
43+1.67 EUR
50+1.46 EUR
54+1.34 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SD FOD3120SD.pdf
FOD3120SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
35+2.1 EUR
38+1.92 EUR
100+1.36 EUR
250+1.13 EUR
500+0.97 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SDV FOD3120SD.pdf
FOD3120SDV
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC132DG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9E9389CADA11C&compId=MC74AC132DG.PDF?ci_sign=ce61ccd4472383711336117bf60a2304e63cb90f
MC74AC132DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Kind of input: with Schmitt trigger
Family: AC
Number of inputs: 2
Kind of package: tube
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
160+0.45 EUR
177+0.41 EUR
190+0.38 EUR
192+0.37 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
BCP56-16T1G BCP56_ser.pdf
BCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 8684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
182+0.39 EUR
247+0.29 EUR
278+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
3000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
BCP56-16T3G bcp56t1-d.pdf
BCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
167+0.43 EUR
242+0.3 EUR
285+0.25 EUR
348+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
SBCP56-16T1G BCP56_ser.pdf
SBCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002K 2n7002k-fsc-d.pdf
2N7002K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
379+0.19 EUR
583+0.12 EUR
694+0.1 EUR
997+0.072 EUR
1127+0.063 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KT1G 2N7002K.PDF
2N7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1042+0.069 EUR
1104+0.065 EUR
1389+0.051 EUR
1588+0.045 EUR
2101+0.034 EUR
2337+0.031 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KW 2N7002KW.pdf
2N7002KW
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.3W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Version: ESD
auf Bestellung 2918 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
432+0.17 EUR
627+0.11 EUR
738+0.097 EUR
1019+0.07 EUR
1155+0.062 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
1N4742A 1N47xxA.PDF
1N4742A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
465+0.16 EUR
Mindestbestellmenge: 465
Im Einkaufswagen  Stück im Wert von  UAH
1N4742ATR 1N47xxA.PDF
1N4742ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
544+0.13 EUR
650+0.11 EUR
991+0.072 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
FOD817B FOD817A300W.pdf
FOD817B
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
241+0.3 EUR
272+0.26 EUR
414+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
FOD817B300 FOD814ASD.pdf FOD817B300.pdf
FOD817B300
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: DIP4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD817B3SD FOD817ASD.pdf FOD817B3SD.pdf
FOD817B3SD
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Mounting: SMD
Kind of output: transistor
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Collector-emitter voltage: 70V
CTR@If: 130-260%@5mA
Insulation voltage: 5kV
Case: SO4
Manufacturer series: FOD817
Type of optocoupler: optocoupler
auf Bestellung 1808 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
193+0.37 EUR
241+0.3 EUR
268+0.27 EUR
500+0.21 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
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