auf Bestellung 3750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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1250+ | 0.16 EUR |
2500+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5408G Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote 1N5408G nach Preis ab 0.11 EUR bis 1.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5408G | Hersteller : Taiwan Semiconductor | Diode 1KV 3A 2-Pin DO-201AD T/R |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO27 Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 (DO-201AD) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 32400 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 28500 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : EIC Semiconductor | Diode Si 1KV 3A 2-Pin DO-201AD |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4372 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 1kV; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Mounting: THT Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 50µA Type of diode: switching |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 1kV; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Mounting: THT Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 50µA Type of diode: switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 288 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
auf Bestellung 19200 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4372 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 9825 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : onsemi |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 19982 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 1KV 3A DO27 Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-27 (DO-201AD) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 20489 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor | Rectifiers 3A, 1000V, Standard Recovery Rectifier |
auf Bestellung 6098 Stücke: Lieferzeit 14-28 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology | Diodes - General Purpose, Power, Switching VR=1000V, IO=3A |
auf Bestellung 6061 Stücke: Lieferzeit 14-28 Tag (e) |
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1N5408G | Hersteller : onsemi | Rectifiers 1000V 3A Standard |
auf Bestellung 43348 Stücke: Lieferzeit 14-28 Tag (e) |
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1N5408G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Features of semiconductor devices: glass passivated Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tape Type of diode: rectifying |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Mounting: THT Features of semiconductor devices: glass passivated Case: DO27 Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tape Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 258 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5408G | Hersteller : ONSEMI |
Description: ONSEMI - 1N5408G - Diode mit Standard-Erholzeit, 1 kV, 3 A, Einfach, 1 V, 200 A tariffCode: 85411000 Durchlassstoßstrom: 200A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Durchlassspannung, max.: 1V Sperrverzögerungszeit: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) productTraceability: No Betriebstemperatur, max.: 150°C |
auf Bestellung 12611 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : ON Semiconductor | Rectifier Diode Switching 1KV 3A 2-Pin DO-201AD Box |
auf Bestellung 4250 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408G | Hersteller : Taiwan Semiconductor | Diode 1KV 3A 2-Pin DO-201AD |
auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |
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1N5408G | Hersteller : Taiwan Semiconductor | Diode 1KV 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5408-G | Hersteller : Comchip Technology | Diode 1KV 3A 2-Pin DO-201AD Ammo |
Produkt ist nicht verfügbar |