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FOD817C300 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817C300W | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 547 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817CS | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817CSD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2902DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Slew rate: 0.6V/μs |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1117DT33RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V |
auf Bestellung 3468 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1045G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Max. forward impulse current: 150A Kind of package: tube Max. load current: 10A Heatsink thickness: 1.14...1.39mm |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQI7N80TU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC08ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
auf Bestellung 707 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC08ADR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC08ADTR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Delay time: 15ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC08M | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC08MTC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC08MTCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Case: TSSOP14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HC08MX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Case: SO14 Family: HC Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Kind of gate: AND Supply voltage: 2...6V DC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC14066BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC Type of integrated circuit: analog switch Mounting: SMD Case: SO14 Operating temperature: -55...125°C Kind of package: tube Quiescent current: 30µA Number of inputs: 4 Supply voltage: 3...18V DC Kind of integrated circuit: multiplexer Technology: CMOS Number of channels: 4 |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78M05BDTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC78M00 |
auf Bestellung 392 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78M05BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC78M00 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BS270 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92 Mounting: THT Type of transistor: N-MOSFET Case: TO92 Polarisation: unipolar Drain current: 0.4A Power dissipation: 0.625W Pulsed drain current: 2A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: bulk Technology: DMOS Kind of channel: enhancement |
auf Bestellung 3173 Stücke: Lieferzeit 14-21 Tag (e) |
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BS270-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92 Mounting: THT Type of transistor: N-MOSFET Case: TO92 Polarisation: unipolar Drain current: 0.4A Power dissipation: 0.625W Pulsed drain current: 2A On-state resistance: 3.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: Ammo Pack Technology: DMOS Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PN2222ABU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: bulk |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2222ATA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: Ammo Pack |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2222ATF | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
auf Bestellung 179 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT2222ADW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PZT2222AT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 2427 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA24N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.9A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR860G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Reverse recovery time: 50ns Heatsink thickness: 1.14...1.39mm Max. load current: 16A |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP69T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
auf Bestellung 696 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA42LT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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74VHC595MTCX | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: TSSOP16 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of output: latch Manufacturer series: VHC |
auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC595MX | ONSEMI |
Category: Shift registersDescription: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; serial output; shift register Number of channels: 8 Mounting: SMD Case: SO16 Family: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Kind of output: latch Quiescent current: 40µA Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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J112 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA Kind of package: bulk Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 5mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 50Ω |
auf Bestellung 4737 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC846BPDW1T1G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
auf Bestellung 12503 Stücke: Lieferzeit 14-21 Tag (e) |
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4N25SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 7.5kV Case: Gull wing 6 Type of optocoupler: optocoupler Kind of output: transistor |
auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) |
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4N25SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 7.5kV Case: Gull wing 6 Type of optocoupler: optocoupler Kind of output: transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBT2222LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.6A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 2483 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848ALT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 110...220 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5950 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3331 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP2907ABU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 7686 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP2907ACTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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KSP2907ATA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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KSP2907ATF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCD4N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2462 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Output voltage: 600V |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3062M Slew rate: 0.6kV/μs Output voltage: 600V |
Produkt ist nicht verfügbar |
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MUR1560G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: TO220AC Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC856ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUS2MA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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BAW56LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 9662 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
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BC517-D74Z | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Case: TO92 Mounting: THT Kind of package: Ammo Pack Collector current: 1.2A Power dissipation: 0.625W Collector-emitter voltage: 30V Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN |
auf Bestellung 2628 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD5N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2478 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2402 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD5N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FQI5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FQU5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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2N3773G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Frequency: 200kHz Kind of package: in-tray |
auf Bestellung 216 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD817C300 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 228+ | 0.31 EUR |
| 265+ | 0.27 EUR |
| 315+ | 0.23 EUR |
| FOD817C300W |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 547 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 243+ | 0.29 EUR |
| 305+ | 0.23 EUR |
| 428+ | 0.17 EUR |
| 451+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| FOD817CS |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 240+ | 0.3 EUR |
| FOD817CSD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 285+ | 0.25 EUR |
| 435+ | 0.16 EUR |
| LM2902DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Slew rate: 0.6V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Slew rate: 0.6V/μs
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 295+ | 0.24 EUR |
| 325+ | 0.22 EUR |
| 376+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| NCP1117DT33RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
auf Bestellung 3468 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 191+ | 0.37 EUR |
| 216+ | 0.33 EUR |
| 247+ | 0.29 EUR |
| 272+ | 0.26 EUR |
| 2500+ | 0.22 EUR |
| MBR1045G |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 106+ | 0.68 EUR |
| 112+ | 0.64 EUR |
| FQI7N80TU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC08ADG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
auf Bestellung 707 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 144+ | 0.5 EUR |
| 150+ | 0.48 EUR |
| 156+ | 0.46 EUR |
| 162+ | 0.44 EUR |
| 275+ | 0.42 EUR |
| 550+ | 0.41 EUR |
| MC74HC08ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC08ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 15ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC08M |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 172+ | 0.42 EUR |
| MM74HC08MTC |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC08MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC08MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Case: SO14
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...6V DC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14066BDG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC
Type of integrated circuit: analog switch
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Technology: CMOS
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: analog switch; multiplexer; Ch: 4; IN: 4; CMOS; SMD; SO14; 3÷18VDC
Type of integrated circuit: analog switch
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of integrated circuit: multiplexer
Technology: CMOS
Number of channels: 4
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.83 EUR |
| MC78M05BDTG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.1A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 193+ | 0.37 EUR |
| 231+ | 0.31 EUR |
| 323+ | 0.22 EUR |
| MC78M05BDTRKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC78M00
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BS270 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: bulk
Technology: DMOS
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: bulk
Technology: DMOS
Kind of channel: enhancement
auf Bestellung 3173 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| BS270-D74Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 400mA; Idm: 2A; 0.625W; TO92
Mounting: THT
Type of transistor: N-MOSFET
Case: TO92
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 0.625W
Pulsed drain current: 2A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: Ammo Pack
Technology: DMOS
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN2222ABU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: bulk
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 397+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 708+ | 0.1 EUR |
| 1013+ | 0.071 EUR |
| PN2222ATA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: Ammo Pack
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 417+ | 0.17 EUR |
| PN2222ATF |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| MBT2222ADW1T1G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.6A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PZT2222AT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 197+ | 0.36 EUR |
| 262+ | 0.27 EUR |
| 295+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| FQA24N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| MUR860G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Reverse recovery time: 50ns
Heatsink thickness: 1.14...1.39mm
Max. load current: 16A
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 66+ | 1.09 EUR |
| BCP69T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 157+ | 0.46 EUR |
| 240+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 319+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| MMBTA42LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC595MTCX |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of output: latch
Manufacturer series: VHC
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; TSSOP16; VHC; VHC; -40÷85°C; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of output: latch
Manufacturer series: VHC
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 188+ | 0.38 EUR |
| 205+ | 0.35 EUR |
| 74VHC595MX |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
Manufacturer series: VHC
Category: Shift registers
Description: IC: digital; Ch: 8; SMD; SO16; VHC; VHC; -40÷85°C; 2÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; serial output; shift register
Number of channels: 8
Mounting: SMD
Case: SO16
Family: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Kind of output: latch
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| J112 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
auf Bestellung 4737 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 298+ | 0.24 EUR |
| 323+ | 0.22 EUR |
| 404+ | 0.18 EUR |
| 417+ | 0.17 EUR |
| 451+ | 0.16 EUR |
| FDS9435A |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 92+ | 0.78 EUR |
| 134+ | 0.53 EUR |
| 157+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| BC846BLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC846BPDW1T1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 65V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 12503 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 544+ | 0.13 EUR |
| 779+ | 0.092 EUR |
| 905+ | 0.079 EUR |
| 1270+ | 0.056 EUR |
| 1454+ | 0.049 EUR |
| 3000+ | 0.04 EUR |
| 9000+ | 0.033 EUR |
| 4N25SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 205+ | 0.35 EUR |
| 224+ | 0.32 EUR |
| 233+ | 0.31 EUR |
| 248+ | 0.29 EUR |
| 500+ | 0.25 EUR |
| 4N25SR2VM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 7.5kV
Case: Gull wing 6
Type of optocoupler: optocoupler
Kind of output: transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2222LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 2483 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 820+ | 0.087 EUR |
| 1323+ | 0.054 EUR |
| 1859+ | 0.038 EUR |
| 2156+ | 0.033 EUR |
| 2483+ | 0.029 EUR |
| BC848ALT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 110...220
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 1163+ | 0.061 EUR |
| 1489+ | 0.048 EUR |
| 1645+ | 0.043 EUR |
| 1993+ | 0.036 EUR |
| 2165+ | 0.033 EUR |
| 3000+ | 0.028 EUR |
| BC848BLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 736+ | 0.097 EUR |
| 834+ | 0.086 EUR |
| 1191+ | 0.06 EUR |
| 1389+ | 0.051 EUR |
| 1993+ | 0.036 EUR |
| 2305+ | 0.031 EUR |
| 2605+ | 0.027 EUR |
| 3000+ | 0.026 EUR |
| KSP2907ABU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 7686 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 451+ | 0.16 EUR |
| 735+ | 0.097 EUR |
| 1009+ | 0.071 EUR |
| 1147+ | 0.062 EUR |
| 2000+ | 0.06 EUR |
| KSP2907ACTA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ATA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ATF |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD4N60TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2462 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.37 EUR |
| 38+ | 1.89 EUR |
| 44+ | 1.66 EUR |
| 59+ | 1.22 EUR |
| 100+ | 1.09 EUR |
| 250+ | 1.04 EUR |
| MOC3062M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 129+ | 0.56 EUR |
| MOC3062SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| MOC3062TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3062M
Slew rate: 0.6kV/μs
Output voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1560G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| SBC856ALT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 304+ | 0.24 EUR |
| 529+ | 0.14 EUR |
| 763+ | 0.094 EUR |
| 1000+ | 0.082 EUR |
| NRVUS2MA |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAW56LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 9662 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 944+ | 0.076 EUR |
| 1374+ | 0.052 EUR |
| 1619+ | 0.044 EUR |
| 2000+ | 0.036 EUR |
| 2337+ | 0.031 EUR |
| 2703+ | 0.026 EUR |
| 3334+ | 0.021 EUR |
| BAW56LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC517-D74Z |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1.2A
Power dissipation: 0.625W
Collector-emitter voltage: 30V
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Collector current: 1.2A
Power dissipation: 0.625W
Collector-emitter voltage: 30V
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
auf Bestellung 2628 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 186+ | 0.39 EUR |
| 213+ | 0.34 EUR |
| 371+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| FCD5N60TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.63 EUR |
| 49+ | 1.47 EUR |
| 58+ | 1.24 EUR |
| 100+ | 1.07 EUR |
| FDD5N60NZTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2402 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 52+ | 1.38 EUR |
| 60+ | 1.21 EUR |
| 73+ | 0.99 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.71 EUR |
| FQD5N60CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQI5N60CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU5N60CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3773G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.82 EUR |
| 11+ | 6.51 EUR |

































