| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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H11L1M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 |
auf Bestellung 760 Stücke: Lieferzeit 14-21 Tag (e) |
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MC7815ABD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2907ABU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PN2907ATA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PN2907ATAR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PN2907ATF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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PN2907ATFR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Polarisation: bipolar Case: TO92 Formed Mounting: THT Type of transistor: PNP Power dissipation: 0.625W Collector current: 0.8A Current gain: 100...300 Collector-emitter voltage: 60V Frequency: 200MHz Kind of package: reel; tape |
auf Bestellung 1861 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3021TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3021SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3021VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3083SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3083M Kind of package: tube Conform to the norm: VDE Output voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3083VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3083M Kind of package: tube Conform to the norm: VDE Output voltage: 800V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1SMB5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 4583 Stücke: Lieferzeit 14-21 Tag (e) |
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BC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBC807-25WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 0.16Ω Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 337mΩ Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 224mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 377mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3022SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3022SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Kind of package: reel; tape Conform to the norm: VDE Output voltage: 400V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14081BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Case: SO14 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
auf Bestellung 1048 Stücke: Lieferzeit 14-21 Tag (e) |
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1N914 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.4A Semiconductor structure: single diode Capacitance: 4pF Kind of package: bulk Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 4ns Leakage current: 50µA |
auf Bestellung 16038 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA24N50F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 270W Case: TO3PN On-state resistance: 0.2Ω Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 96A |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC78M15CDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 2385 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC78M15ABDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC78M15ACDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC7815BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 658 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP8860 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 556A Power dissipation: 254W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MUR4100ERLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns |
auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33179DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14 Case: SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Slew rate: 2V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 5MHz Number of channels: quad; 4 |
auf Bestellung 2414 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4743ATR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4743A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| LP2951CD-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
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FXL4TD245BQX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Case: DQFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 4 Number of inputs: 4 |
auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF55N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.8A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±25V Mounting: THT Gate charge: 37nC Kind of channel: enhancement Pulsed drain current: 220A Kind of package: tube On-state resistance: 0.22Ω |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7SZ175P6X | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ |
auf Bestellung 2253 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C10LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
auf Bestellung 20785 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3052M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M Output voltage: 600V Manufacturer series: MOC3052M Mounting: THT Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Trigger current: 10mA Case: DIP6 Type of optocoupler: optotriac |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAV99LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 8648 Stücke: Lieferzeit 14-21 Tag (e) |
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4N35M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: THT Kind of output: transistor Turn-off time: 2µs Turn-on time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 100%@10mA Insulation voltage: 7.5kV Case: DIP6 Type of optocoupler: optocoupler |
auf Bestellung 787 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCP190N65F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVB190N65S3F | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
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| FCH190N65F-F155 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO247-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
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| FCP190N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
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| FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 33nC Power dissipation: 144W Pulsed drain current: 42.5A |
Produkt ist nicht verfügbar |
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| NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 36W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Case: TO247 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.165Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
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| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 129W Pulsed drain current: 45A |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TDFN4 Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTPF190N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Case: TO220FP Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 31nC Power dissipation: 32W Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
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|
SBAS40-06LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W |
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
|
MMBT3904 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
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|
1N4148WS | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD323F Max. forward voltage: 1V Reverse recovery time: 4ns Capacitance: 4pF Power dissipation: 0.2W |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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|
FDS4480 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 10.8A Pulsed drain current: 45A Power dissipation: 2.5W Case: SO8 On-state resistance: 21mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2278 Stücke: Lieferzeit 14-21 Tag (e) |
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| H11L1M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
auf Bestellung 760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 149+ | 0.48 EUR |
| 172+ | 0.42 EUR |
| 178+ | 0.4 EUR |
| MC7815ABD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 1498 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 124+ | 0.58 EUR |
| 135+ | 0.53 EUR |
| 155+ | 0.46 EUR |
| PN2907ABU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PN2907ATA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN2907ATAR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN2907ATF |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN2907ATFR |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Frequency: 200MHz
Kind of package: reel; tape
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 0.625W
Collector current: 0.8A
Current gain: 100...300
Collector-emitter voltage: 60V
Frequency: 200MHz
Kind of package: reel; tape
auf Bestellung 1861 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 618+ | 0.12 EUR |
| 875+ | 0.082 EUR |
| 1040+ | 0.069 EUR |
| 1163+ | 0.061 EUR |
| MOC3021TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3083SVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 800V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3083VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 800V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
Conform to the norm: VDE
Output voltage: 800V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5918BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 4583 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 258+ | 0.28 EUR |
| 313+ | 0.23 EUR |
| 404+ | 0.18 EUR |
| 569+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| BC807-25LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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| SBC807-25LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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| SBC807-25WT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTHL160N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Produkt ist nicht verfügbar
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| NTBG160N120SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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| NVBG160N120SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Produkt ist nicht verfügbar
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| NVHL160N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Produkt ist nicht verfügbar
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| NTH4L160N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Produkt ist nicht verfügbar
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| NVH4L160N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Produkt ist nicht verfügbar
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| MOC3022SM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Output voltage: 400V
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| MOC3022SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Produkt ist nicht verfügbar
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| MC14081BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 1048 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 218+ | 0.33 EUR |
| 244+ | 0.29 EUR |
| 290+ | 0.25 EUR |
| 323+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| 1N914 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.4A
Semiconductor structure: single diode
Capacitance: 4pF
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.4A
Semiconductor structure: single diode
Capacitance: 4pF
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Leakage current: 50µA
auf Bestellung 16038 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1191+ | 0.06 EUR |
| 1429+ | 0.05 EUR |
| 2718+ | 0.026 EUR |
| 3847+ | 0.019 EUR |
| 4311+ | 0.017 EUR |
| 4762+ | 0.015 EUR |
| 5320+ | 0.013 EUR |
| FDA24N50F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.79 EUR |
| 30+ | 3.4 EUR |
| MC78M15CDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 304+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 400+ | 0.18 EUR |
| 468+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| MC78M15ABDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC78M15ACDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC7815BD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 135+ | 0.53 EUR |
| 149+ | 0.48 EUR |
| 169+ | 0.42 EUR |
| 200+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| FDP8860 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUR4100ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 125+ | 0.57 EUR |
| 156+ | 0.46 EUR |
| 167+ | 0.43 EUR |
| MC33179DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 5MHz
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 5MHz
Number of channels: quad; 4
auf Bestellung 2414 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 127+ | 0.57 EUR |
| 140+ | 0.51 EUR |
| 163+ | 0.44 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 1N4743ATR |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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| 1N4743A |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LP2951CD-3.0R2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXL4TD245BQX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
auf Bestellung 1982 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 65+ | 1.1 EUR |
| SZMM3Z18VT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 910+ | 0.079 EUR |
| 1147+ | 0.062 EUR |
| 1257+ | 0.057 EUR |
| 1511+ | 0.047 EUR |
| FDPF55N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Pulsed drain current: 220A
Kind of package: tube
On-state resistance: 0.22Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
Mounting: THT
Gate charge: 37nC
Kind of channel: enhancement
Pulsed drain current: 220A
Kind of package: tube
On-state resistance: 0.22Ω
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| NC7SZ175P6X |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 2253 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1000+ | 0.072 EUR |
| 1180+ | 0.061 EUR |
| 1270+ | 0.056 EUR |
| BZX84C10LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 20785 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 834+ | 0.086 EUR |
| 1042+ | 0.069 EUR |
| 1405+ | 0.051 EUR |
| 1651+ | 0.043 EUR |
| 2093+ | 0.034 EUR |
| 2526+ | 0.028 EUR |
| 2977+ | 0.024 EUR |
| 3334+ | 0.021 EUR |
| 15000+ | 0.018 EUR |
| MOC3052M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Output voltage: 600V
Manufacturer series: MOC3052M
Mounting: THT
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Trigger current: 10mA
Case: DIP6
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Output voltage: 600V
Manufacturer series: MOC3052M
Mounting: THT
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Trigger current: 10mA
Case: DIP6
Type of optocoupler: optotriac
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| SBAV99LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 8648 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1250+ | 0.057 EUR |
| 1786+ | 0.04 EUR |
| 2253+ | 0.032 EUR |
| 2539+ | 0.028 EUR |
| 2809+ | 0.025 EUR |
| 3268+ | 0.022 EUR |
| 5000+ | 0.021 EUR |
| 4N35M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 277+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| 302+ | 0.24 EUR |
| NTB190N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB190N65S3F |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH190N65F-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65S3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP190N65S3R0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF190N65S3HF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL190N65S3HF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT190N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF190N65S3H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 32W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBAS40-06LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT3904 |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4148WS |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Power dissipation: 0.2W
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 893+ | 0.08 EUR |
| 1097+ | 0.065 EUR |
| 1220+ | 0.059 EUR |
| 1624+ | 0.044 EUR |
| 1887+ | 0.038 EUR |
| 3000+ | 0.034 EUR |
| FDS4480 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2278 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 72+ | 1.01 EUR |
| 81+ | 0.89 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.76 EUR |























