| Foto | Bezeichnung | Hersteller | Beschreibung |
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MOC3062SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Slew rate: 0.6kV/μs Manufacturer series: MOC3062M |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3062TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Trigger current: 10mA Mounting: THT Number of channels: 1 Slew rate: 0.6kV/μs Manufacturer series: MOC3062M |
auf Bestellung 647 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1560G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: TO220AC Reverse recovery time: 60ns Heatsink thickness: 1.14...1.39mm |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC373ADTG | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Kind of output: 3-state Kind of package: tube Supply voltage: 2...6V DC Manufacturer series: HC |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC373ADTR2G | ONSEMI |
Category: LatchesDescription: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Kind of output: 3-state Quiescent current: 160µA Kind of package: reel; tape Supply voltage: 2...6V DC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC373ADWG | ONSEMI |
Category: LatchesDescription: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 8 Technology: CMOS; TTL Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -55...125°C Family: HC Kind of output: 3-state Kind of package: tube Quiescent current: 160µA |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC373ADWR2G | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C; HC Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Family: HC Kind of output: 3-state; non-inverting Trigger: level-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM74HC373MTC | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Family: HC Kind of output: 3-state Kind of package: tube Supply voltage: 2...6V DC Manufacturer series: HC |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM74HC373MTCX | ONSEMI |
Category: LatchesDescription: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Family: HC Kind of output: 3-state Kind of package: reel; tape Supply voltage: 2...6V DC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM74HC373WM | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Family: HC Kind of output: 3-state Trigger: level-triggered |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM74HC373WMX | ONSEMI |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Manufacturer series: HC Operating temperature: -40...85°C Family: HC Kind of output: 3-state Trigger: level-triggered |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC74HC4067ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; IN: 4 Type of integrated circuit: digital Kind of integrated circuit: analog; demultiplexer; multiplexer; switch Number of channels: 1 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP24 Manufacturer series: HC Family: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SBC856ALT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75332P3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Case: TO220AB Technology: UltraFET® Polarisation: unipolar Gate charge: 85nC On-state resistance: 16mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 60A Power dissipation: 145W Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUS2MA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC849BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2003 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
auf Bestellung 8487 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC517-D74Z | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
auf Bestellung 5755 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1455DR2G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: astable; monostable; RC timer Supply voltage: 4.5...16V DC Case: SO8 DC supply current: 10mA Output current: 0.2A Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape Controlled voltage: 10V |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS260T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Kind of package: reel; tape |
auf Bestellung 4025 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD5N60TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD5N60NZTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2411 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD5N60CTM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQI5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQU5N60CTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MOC3051M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 600V; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
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2N3773G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 16A Power dissipation: 150W Case: TO3 Mounting: THT Frequency: 200kHz Kind of package: in-tray |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC245MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...5.5V DC Manufacturer series: VHC |
auf Bestellung 536 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74VHC245MX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCD380N60E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLV431ALPG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: bulk Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLV431ALPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 1506 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431ASN1T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLV431ASNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Kind of package: reel; tape Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Maximum output current: 20mA Tolerance: ±1% Reference voltage: 1.24V Operating voltage: 1.24...16V Type of integrated circuit: voltage reference source |
auf Bestellung 2585 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BLPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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TLV431BSN1T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLV431BSNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLV431CSN1T1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
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NCP45521IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Mounting: SMD Active logical level: high Kind of integrated circuit: high-side Kind of output: N-Channel Kind of package: reel; tape On-state resistance: 9.5/22.5mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 10.5A Type of integrated circuit: power switch |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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BD237G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 2A Power dissipation: 25W Case: TO225 Mounting: THT Kind of package: bulk Frequency: 3MHz Current gain: 40 |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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FIN1001M5X | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Technology: LVDS Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3.6V DC Kind of integrated circuit: differential; line driver; translator Case: SOT23-5 |
auf Bestellung 5680 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6517BU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 20...200 Mounting: THT Frequency: 40Hz...200MHz Kind of package: bulk |
auf Bestellung 4860 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6517TA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 30...200 Mounting: THT Frequency: 40...200MHz Kind of package: Ammo Pack |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6520TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 0.5A Current gain: 30...200 Frequency: 40...200MHz Collector-emitter voltage: 350V |
auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2234LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Base resistor: 22kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN |
auf Bestellung 3854 Stücke: Lieferzeit 14-21 Tag (e) |
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FJPF13007H2TU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 8A Power dissipation: 40W Case: TO220FP Current gain: 8...60 Mounting: THT Kind of package: tube Frequency: 4MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MUR1620CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.15...1.39mm Max. load current: 16A Max. forward impulse current: 100A |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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74ACT04SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Family: ACT Kind of package: tube Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 Supply voltage: 4.5...5.5V DC |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
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74ACT04SCX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Family: ACT Kind of package: reel; tape Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 4.5...5.5V DC |
auf Bestellung 1727 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT04DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: NOT Family: ACT Number of inputs: 1 Kind of package: reel; tape |
auf Bestellung 2530 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH104N60F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH104N60F-F085 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AFGB40T65SQDN | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 76nC |
Produkt ist nicht verfügbar |
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TIP122G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR40250G | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.86V Kind of package: tube Max. load current: 80A Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 150A |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR40250TG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220-3 Max. forward voltage: 0.86V Kind of package: tube Max. load current: 80A Heatsink thickness: 1.14...1.39mm Max. forward impulse current: 150A |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ11015G | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP8N50NZ | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDA28N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3062SR2M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Slew rate: 0.6kV/μs
Manufacturer series: MOC3062M
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; Gull wing 6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Slew rate: 0.6kV/μs
Manufacturer series: MOC3062M
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| MOC3062TVM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Slew rate: 0.6kV/μs
Manufacturer series: MOC3062M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC3062M; 0.6kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Slew rate: 0.6kV/μs
Manufacturer series: MOC3062M
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.03 EUR |
| 97+ | 0.74 EUR |
| 112+ | 0.64 EUR |
| 120+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| MUR1560G | ![]() |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220AC; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: TO220AC
Reverse recovery time: 60ns
Heatsink thickness: 1.14...1.39mm
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.33 EUR |
| 64+ | 1.13 EUR |
| MC74HC373ADTG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Supply voltage: 2...6V DC
Manufacturer series: HC
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 91+ | 0.79 EUR |
| 108+ | 0.66 EUR |
| 132+ | 0.54 EUR |
| 150+ | 0.48 EUR |
| 300+ | 0.44 EUR |
| MC74HC373ADTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC373ADWG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; CMOS,TTL; 2÷6VDC; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 111+ | 0.65 EUR |
| 131+ | 0.55 EUR |
| 142+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| MC74HC373ADWR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C; HC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C; HC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC373MTC |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: tube
Supply voltage: 2...6V DC
Manufacturer series: HC
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 74+ | 0.98 EUR |
| 92+ | 0.78 EUR |
| MM74HC373MTCX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷6VDC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Kind of package: reel; tape
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC373WM | ![]() |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state
Trigger: level-triggered
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| MM74HC373WMX |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: HC
Operating temperature: -40...85°C
Family: HC
Kind of output: 3-state
Trigger: level-triggered
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC4067ADTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; analog,demultiplexer,multiplexer,switch; Ch: 1; IN: 4
Type of integrated circuit: digital
Kind of integrated circuit: analog; demultiplexer; multiplexer; switch
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP24
Manufacturer series: HC
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBC856ALT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 343+ | 0.21 EUR |
| 560+ | 0.13 EUR |
| 767+ | 0.093 EUR |
| 1000+ | 0.083 EUR |
| HUF75332P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 145W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 85nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 145W
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
| NRVUS2MA |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC849BLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2003 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.072 EUR |
| 1667+ | 0.043 EUR |
| 2003+ | 0.036 EUR |
| BAW56LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 8487 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1137+ | 0.063 EUR |
| 1583+ | 0.045 EUR |
| 1719+ | 0.042 EUR |
| 1832+ | 0.039 EUR |
| 2618+ | 0.027 EUR |
| 3049+ | 0.023 EUR |
| 3938+ | 0.018 EUR |
| BAW56LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC517-D74Z |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 5755 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 186+ | 0.39 EUR |
| 213+ | 0.34 EUR |
| 379+ | 0.19 EUR |
| 472+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| MC1455DR2G |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: SO8
DC supply current: 10mA
Output current: 0.2A
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Controlled voltage: 10V
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 174+ | 0.41 EUR |
| 197+ | 0.36 EUR |
| 207+ | 0.35 EUR |
| MBRS260T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Kind of package: reel; tape
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 266+ | 0.27 EUR |
| 360+ | 0.2 EUR |
| 410+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| FCD5N60TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 44+ | 1.64 EUR |
| 49+ | 1.49 EUR |
| 57+ | 1.27 EUR |
| 100+ | 1.07 EUR |
| FDD5N60NZTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2411 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.3 EUR |
| 63+ | 1.15 EUR |
| 68+ | 1.05 EUR |
| 78+ | 0.92 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.72 EUR |
| FQD5N60CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQI5N60CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU5N60CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3051M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 77+ | 0.93 EUR |
| 85+ | 0.84 EUR |
| 110+ | 0.65 EUR |
| 133+ | 0.54 EUR |
| 2N3773G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 16A
Power dissipation: 150W
Case: TO3
Mounting: THT
Frequency: 200kHz
Kind of package: in-tray
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.45 EUR |
| 11+ | 7.11 EUR |
| 100+ | 6.55 EUR |
| 74VHC245MTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.46 EUR |
| 99+ | 0.73 EUR |
| 137+ | 0.52 EUR |
| 250+ | 0.45 EUR |
| 74VHC245MX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD380N60E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ALPG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ALPRAG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 123+ | 0.58 EUR |
| TLV431ASN1T1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431ASNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 20mA
Tolerance: ±1%
Reference voltage: 1.24V
Operating voltage: 1.24...16V
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Kind of package: reel; tape
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 20mA
Tolerance: ±1%
Reference voltage: 1.24V
Operating voltage: 1.24...16V
Type of integrated circuit: voltage reference source
auf Bestellung 2585 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 177+ | 0.41 EUR |
| 196+ | 0.37 EUR |
| 220+ | 0.33 EUR |
| 224+ | 0.32 EUR |
| TLV431BLPRAG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 89+ | 0.81 EUR |
| 100+ | 0.72 EUR |
| 110+ | 0.65 EUR |
| TLV431BSN1T1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 182+ | 0.39 EUR |
| 202+ | 0.35 EUR |
| 234+ | 0.31 EUR |
| 260+ | 0.28 EUR |
| 285+ | 0.25 EUR |
| TLV431BSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLV431CSN1T1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP45521IMNTWG-H |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
On-state resistance: 9.5/22.5mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Kind of package: reel; tape
On-state resistance: 9.5/22.5mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
Type of integrated circuit: power switch
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| BD237G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 40
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Current gain: 40
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 89+ | 0.81 EUR |
| 105+ | 0.69 EUR |
| 122+ | 0.59 EUR |
| FIN1001M5X |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Case: SOT23-5
auf Bestellung 5680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 70+ | 1.03 EUR |
| 77+ | 0.93 EUR |
| 84+ | 0.86 EUR |
| 2N6517BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...200
Mounting: THT
Frequency: 40Hz...200MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...200
Mounting: THT
Frequency: 40Hz...200MHz
Kind of package: bulk
auf Bestellung 4860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 940+ | 0.077 EUR |
| 980+ | 0.073 EUR |
| 1040+ | 0.07 EUR |
| 2000+ | 0.067 EUR |
| 2N6517TA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 30...200
Mounting: THT
Frequency: 40...200MHz
Kind of package: Ammo Pack
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 30...200
Mounting: THT
Frequency: 40...200MHz
Kind of package: Ammo Pack
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 325+ | 0.22 EUR |
| 387+ | 0.18 EUR |
| 508+ | 0.14 EUR |
| 560+ | 0.13 EUR |
| 2N6520TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 0.5A
Current gain: 30...200
Frequency: 40...200MHz
Collector-emitter voltage: 350V
auf Bestellung 612 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 506+ | 0.14 EUR |
| 612+ | 0.12 EUR |
| MMUN2234LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
auf Bestellung 3854 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 926+ | 0.077 EUR |
| 1462+ | 0.049 EUR |
| 1954+ | 0.037 EUR |
| 2193+ | 0.033 EUR |
| 3000+ | 0.028 EUR |
| FJPF13007H2TU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 40W
Case: TO220FP
Current gain: 8...60
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 40W
Case: TO220FP
Current gain: 8...60
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1620CTG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 57+ | 1.27 EUR |
| 66+ | 1.09 EUR |
| 87+ | 0.83 EUR |
| 74ACT04SC |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 161+ | 0.44 EUR |
| 74ACT04SCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
auf Bestellung 1727 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 139+ | 0.52 EUR |
| 164+ | 0.44 EUR |
| 185+ | 0.39 EUR |
| 500+ | 0.37 EUR |
| MC74ACT04DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NOT
Family: ACT
Number of inputs: 1
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NOT
Family: ACT
Number of inputs: 1
Kind of package: reel; tape
auf Bestellung 2530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 193+ | 0.37 EUR |
| 215+ | 0.33 EUR |
| 254+ | 0.28 EUR |
| 283+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| 2500+ | 0.2 EUR |
| FCH104N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| 30+ | 5.88 EUR |
| FCH104N60F-F085 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGB40T65SQDN |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP122G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 95+ | 0.76 EUR |
| 132+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 250+ | 0.4 EUR |
| MBR40250G |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Kind of package: tube
Max. load current: 80A
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Kind of package: tube
Max. load current: 80A
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.82 EUR |
| 43+ | 1.67 EUR |
| 48+ | 1.5 EUR |
| MBR40250TG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Kind of package: tube
Max. load current: 80A
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Kind of package: tube
Max. load current: 80A
Heatsink thickness: 1.14...1.39mm
Max. forward impulse current: 150A
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 50+ | 1.59 EUR |
| MJ11015G | ![]() |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.04 EUR |
| FDP8N50NZ |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDA28N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.32 EUR |
| 17+ | 4.25 EUR |
| 30+ | 3.68 EUR |

































