NCV57530DWKR2G onsemi
Hersteller: onsemi
Galvanically Isolated Gate Drivers Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance
| Anzahl | Preis |
|---|---|
| 1+ | 9.24 EUR |
| 10+ | 6.11 EUR |
| 25+ | 5.28 EUR |
| 100+ | 4.36 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.87 EUR |
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Technische Details NCV57530DWKR2G onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE, Voltage - Output Supply: 32V, Number of Channels: 2, Pulse Width Distortion (Max): 20ns, Propagation Delay tpLH / tpHL (Max): 90ns, 90ns, Common Mode Transient Immunity (Min): 100kV/µs, Rise / Fall Time (Typ): 12ns, 10ns, Supplier Device Package: 16-SOIC, Approval Agency: VDE, Voltage - Isolation: 5000Vrms, Current - Output High, Low: 6.5A, 6.5A, Technology: Capacitive Coupling, Current - Peak Output: 6.5A, Operating Temperature: -40°C ~ 125°C, Mounting Type: Surface Mount, Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NCV57530DWKR2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NCV57530DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEVoltage - Output Supply: 32V Number of Channels: 2 Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Common Mode Transient Immunity (Min): 100kV/µs Rise / Fall Time (Typ): 12ns, 10ns Supplier Device Package: 16-SOIC Approval Agency: VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 6.5A, 6.5A Technology: Capacitive Coupling Current - Peak Output: 6.5A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCV57530DWKR2G | onsemi |
Description: ISOLATED DUAL-CHANNEL IGBT GATEVoltage - Output Supply: 32V Number of Channels: 2 Pulse Width Distortion (Max): 20ns Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Common Mode Transient Immunity (Min): 100kV/µs Rise / Fall Time (Typ): 12ns, 10ns Supplier Device Package: 16-SOIC Approval Agency: VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 6.5A, 6.5A Technology: Capacitive Coupling Current - Peak Output: 6.5A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCV57530DWKR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Voltage - Output Supply: 32V
Number of Channels: 2
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Packaging: Tape & Reel (TR)
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Voltage - Output Supply: 32V
Number of Channels: 2
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV57530DWKR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Voltage - Output Supply: 32V
Number of Channels: 2
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Packaging: Cut Tape (CT)
Description: ISOLATED DUAL-CHANNEL IGBT GATE
Voltage - Output Supply: 32V
Number of Channels: 2
Pulse Width Distortion (Max): 20ns
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 12ns, 10ns
Supplier Device Package: 16-SOIC
Approval Agency: VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 6.5A, 6.5A
Technology: Capacitive Coupling
Current - Peak Output: 6.5A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width), 14 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
