Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FGHL40T120SWD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FQA36P15 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -25.5A Power dissipation: 294W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
TL431CDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
TL431CLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
TL431CLPRPG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
TL431ILPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
1N4937RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 4019 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MPSA42 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
auf Bestellung 3184 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
FGY140T120SWD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 140A Power dissipation: 576W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 560A Mounting: THT Gate charge: 415.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FGH4L40T120LQD | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 153W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 227nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
TL431IDR2G | ONSEMI |
![]() Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
1N4733A | ONSEMI |
![]() Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA |
auf Bestellung 3190 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
1N4749A | ONSEMI |
![]() Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 24V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA |
auf Bestellung 1668 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
1N4933G | ONSEMI |
![]() Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Case: CASE59-10; DO41 Mounting: THT Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 200ns Load current: 1A Max. forward voltage: 1.2V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
FDG6335N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 442mΩ Gate charge: 1.4nC Drain current: 0.7A Technology: PowerTrench® Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 477 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
BAS16WT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SC70 Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 7619 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
BAS16XV2T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 1462 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
BAS16XV2T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NCP5181DR2G | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 60ns Pulse fall time: 40ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
auf Bestellung 1747 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() +1 |
MC74VHC1G04DTT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSOP5 Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC Number of inputs: 1 Kind of gate: NOT |
auf Bestellung 1413 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
BAT54LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.2W Max. load current: 0.3A Reverse recovery time: 5ns Capacitance: 7.6pF |
auf Bestellung 9158 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MC1413BDG | ONSEMI |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
NL27WZ07DTT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C Case: TSOP6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
FXL5T244BQX | ONSEMI |
![]() Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Case: DQFN14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 5 Number of inputs: 5 |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MBR20L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.47V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDMS86520 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
NCP51460SN33T1G | ONSEMI |
![]() Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Case: SOT23 Type of integrated circuit: voltage reference source Kind of package: reel; tape Mounting: SMD Operating temperature: 0...100°C Maximum output current: 20mA Tolerance: ±1% Reference voltage: 3.3V Operating voltage: 4.2...28V |
auf Bestellung 3022 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MC14073BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Kind of gate: AND Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Case: SO14 Kind of package: tube Mounting: SMD Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC |
auf Bestellung 379 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MC14073BDR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Supply voltage: 3...18V DC Operating temperature: -55...125°C Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Case: SO14 Kind of package: reel; tape Mounting: SMD Number of channels: triple; 3 Delay time: 130ns Number of inputs: 3 Kind of gate: AND |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 14011 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
DF10M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Max. off-state voltage: 1kV Case: MDIP4L Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Kind of package: tube Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
BZX79C2V4 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C Leakage current: 0.1mA |
auf Bestellung 2091 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
FSUSB42MUX | ONSEMI |
![]() Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Case: MSOP10 Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Supply voltage: 2.4...4.4V DC Kind of output: DPDT |
auf Bestellung 2095 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
74AC86MTCX | ONSEMI |
![]() ![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
74AC86SCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC86DR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC86DTR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
BZX79C9V1 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX79C |
auf Bestellung 1985 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
ES1B | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Leakage current: 0.1mA Capacitance: 7pF Reverse recovery time: 15ns Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 0.92V Load current: 1A Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 100V Semiconductor structure: single diode Kind of package: reel; tape Mounting: SMD Type of diode: rectifying |
auf Bestellung 3445 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MJE15035G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB Type of transistor: PNP Mounting: THT Collector current: 4A Collector-emitter voltage: 350V Power dissipation: 50W Frequency: 30MHz Polarisation: bipolar Kind of package: tube Case: TO220AB |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MC78LC50NTRG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.038V Output voltage: 5V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...12V |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
auf Bestellung 1837 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
SMMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 2843 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NSVMMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Current gain: 60...100 |
auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
MMUN2217LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2230LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2236LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ Current gain: 80...150 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2238LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2240LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...300 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
MMUN2241LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Current gain: 160...350 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SMMUN2238LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SMMUN2234LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SMMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
SMMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
![]() |
2N7002LT3G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FUSB302BUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9 Kind of integrated circuit: USB C controller Case: WLCSP9 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB380CUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12 Kind of integrated circuit: USB C controller Case: WLCSP12 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.4...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
![]() |
80SQ045NG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Kind of package: bulk Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.55V Load current: 8A Max. off-state voltage: 45V Case: DO201AD |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
|
FGHL40T120SWD |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQA36P15 |
![]() |
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.29 EUR |
16+ | 4.75 EUR |
20+ | 3.63 EUR |
21+ | 3.43 EUR |
TL431CDR2G |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TL431CLPRAG |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TL431CLPRPG |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TL431ILPRAG |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4937RLG |
![]() |
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 4019 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
439+ | 0.16 EUR |
500+ | 0.14 EUR |
673+ | 0.11 EUR |
763+ | 0.094 EUR |
898+ | 0.08 EUR |
1202+ | 0.059 EUR |
1273+ | 0.056 EUR |
MPSA42 |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 3184 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
321+ | 0.22 EUR |
550+ | 0.13 EUR |
625+ | 0.11 EUR |
695+ | 0.1 EUR |
FGY140T120SWD |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGH4L40T120LQD |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TL431IDR2G |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4733A |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
auf Bestellung 3190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
400+ | 0.18 EUR |
498+ | 0.14 EUR |
819+ | 0.087 EUR |
1455+ | 0.049 EUR |
1539+ | 0.046 EUR |
1N4749A |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
439+ | 0.16 EUR |
511+ | 0.14 EUR |
747+ | 0.096 EUR |
878+ | 0.082 EUR |
1071+ | 0.067 EUR |
1446+ | 0.049 EUR |
1525+ | 0.047 EUR |
1N4933G |
![]() |
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: bulk
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Mounting: THT
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDG6335N |
![]() |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Drain current: 0.7A
Technology: PowerTrench®
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Drain current: 0.7A
Technology: PowerTrench®
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
111+ | 0.65 EUR |
143+ | 0.5 EUR |
230+ | 0.31 EUR |
243+ | 0.29 EUR |
BAS16WT1G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 7619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
625+ | 0.11 EUR |
981+ | 0.073 EUR |
1774+ | 0.04 EUR |
2578+ | 0.028 EUR |
3677+ | 0.019 EUR |
3907+ | 0.018 EUR |
BAS16XV2T1G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
826+ | 0.087 EUR |
1191+ | 0.06 EUR |
1462+ | 0.049 EUR |
BAS16XV2T5G |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
581+ | 0.12 EUR |
782+ | 0.092 EUR |
1313+ | 0.054 EUR |
1731+ | 0.041 EUR |
1810+ | 0.04 EUR |
NCP5181DR2G |
![]() |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
43+ | 1.7 EUR |
44+ | 1.63 EUR |
45+ | 1.6 EUR |
100+ | 1.54 EUR |
MC74VHC1G04DTT1G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
Kind of gate: NOT
auf Bestellung 1413 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
610+ | 0.12 EUR |
695+ | 0.1 EUR |
747+ | 0.096 EUR |
807+ | 0.089 EUR |
834+ | 0.086 EUR |
848+ | 0.084 EUR |
1000+ | 0.08 EUR |
BAT54LT1G |
![]() |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.3A
Reverse recovery time: 5ns
Capacitance: 7.6pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Max. load current: 0.3A
Reverse recovery time: 5ns
Capacitance: 7.6pF
auf Bestellung 9158 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
613+ | 0.12 EUR |
944+ | 0.076 EUR |
1296+ | 0.055 EUR |
1502+ | 0.048 EUR |
2101+ | 0.034 EUR |
3125+ | 0.023 EUR |
3312+ | 0.022 EUR |
MC1413BDG |
![]() |
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NL27WZ07DTT1G |
![]() |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FXL5T244BQX |
![]() |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
71+ | 1 EUR |
MBR20L45CTG |
![]() |
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86520 |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP51460SN33T1G |
![]() |
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Case: SOT23
Type of integrated circuit: voltage reference source
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...100°C
Maximum output current: 20mA
Tolerance: ±1%
Reference voltage: 3.3V
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Case: SOT23
Type of integrated circuit: voltage reference source
Kind of package: reel; tape
Mounting: SMD
Operating temperature: 0...100°C
Maximum output current: 20mA
Tolerance: ±1%
Reference voltage: 3.3V
Operating voltage: 4.2...28V
auf Bestellung 3022 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
76+ | 0.95 EUR |
90+ | 0.8 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
1000+ | 0.45 EUR |
MC14073BDG |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
204+ | 0.35 EUR |
226+ | 0.32 EUR |
244+ | 0.29 EUR |
365+ | 0.2 EUR |
379+ | 0.19 EUR |
MC14073BDR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Kind of gate: AND
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Kind of gate: AND
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2214LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 14011 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
695+ | 0.1 EUR |
1211+ | 0.059 EUR |
1437+ | 0.05 EUR |
1786+ | 0.04 EUR |
3312+ | 0.022 EUR |
3497+ | 0.02 EUR |
DF10M |
![]() |
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: MDIP4L
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: MDIP4L
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C2V4 |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
834+ | 0.086 EUR |
1352+ | 0.053 EUR |
2091+ | 0.034 EUR |
FSUSB42MUX |
![]() |
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2.4...4.4V DC
Kind of output: DPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Supply voltage: 2.4...4.4V DC
Kind of output: DPDT
auf Bestellung 2095 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
154+ | 0.47 EUR |
178+ | 0.4 EUR |
199+ | 0.36 EUR |
309+ | 0.23 EUR |
327+ | 0.22 EUR |
74AC86MTCX |
![]() ![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74AC86SCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC86DR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC86DTR2G |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C9V1 |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX79C
auf Bestellung 1985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
834+ | 0.086 EUR |
1191+ | 0.06 EUR |
1471+ | 0.049 EUR |
1985+ | 0.036 EUR |
ES1B |
![]() |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Capacitance: 7pF
Reverse recovery time: 15ns
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Capacitance: 7pF
Reverse recovery time: 15ns
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Kind of package: reel; tape
Mounting: SMD
Type of diode: rectifying
auf Bestellung 3445 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
203+ | 0.35 EUR |
286+ | 0.25 EUR |
336+ | 0.21 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
MJE15035G |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: PNP
Mounting: THT
Collector current: 4A
Collector-emitter voltage: 350V
Power dissipation: 50W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: PNP
Mounting: THT
Collector current: 4A
Collector-emitter voltage: 350V
Power dissipation: 50W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.23 EUR |
53+ | 1.36 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
250+ | 0.92 EUR |
MC78LC50NTRG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
174+ | 0.41 EUR |
194+ | 0.37 EUR |
231+ | 0.31 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
MMUN2216LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
auf Bestellung 1837 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
610+ | 0.12 EUR |
884+ | 0.081 EUR |
1034+ | 0.069 EUR |
1462+ | 0.049 EUR |
1837+ | 0.039 EUR |
SMMUN2214LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 2843 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
587+ | 0.12 EUR |
1021+ | 0.07 EUR |
1645+ | 0.043 EUR |
2009+ | 0.036 EUR |
2315+ | 0.031 EUR |
2451+ | 0.029 EUR |
NSVMMUN2212LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
527+ | 0.14 EUR |
949+ | 0.075 EUR |
1250+ | 0.057 EUR |
1374+ | 0.052 EUR |
MMUN2212LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
658+ | 0.11 EUR |
758+ | 0.094 EUR |
1226+ | 0.058 EUR |
1701+ | 0.042 EUR |
2840+ | 0.026 EUR |
MMUN2217LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2211LT3G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2230LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2236LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2238LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2240LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2241LT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2238LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2234LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2211LT3G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2216LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N7002LT3G | ![]() |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FUSB302BUCX |
![]() |
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of integrated circuit: USB C controller
Case: WLCSP9
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of integrated circuit: USB C controller
Case: WLCSP9
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FUSB380CUCX |
![]() |
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of integrated circuit: USB C controller
Case: WLCSP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of integrated circuit: USB C controller
Case: WLCSP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
80SQ045NG |
![]() |
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Kind of package: bulk
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. off-state voltage: 45V
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Kind of package: bulk
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. off-state voltage: 45V
Case: DO201AD
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
115+ | 0.62 EUR |
117+ | 0.61 EUR |