Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142349) > Seite 2298 nach 2373

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2293 2294 2295 2296 2297 2298 2299 2300 2301 2302 2303 2370 2373  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CNY173SM CNY173SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
174+0.41 EUR
195+0.37 EUR
205+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CNY173SR2VM CNY173SR2VM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE15500065C745&compId=CNY172M.pdf?ci_sign=9aa5dceae1f8043b24543a67c5b38104b946659a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
156+0.46 EUR
167+0.43 EUR
184+0.39 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GS KSD1691GS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
auf Bestellung 1989 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
51+1.41 EUR
59+1.22 EUR
72+1.01 EUR
108+0.66 EUR
114+0.63 EUR
500+0.6 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GSTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YSTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGBU KSD1616AGBU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 6578 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
160+0.45 EUR
196+0.37 EUR
432+0.17 EUR
496+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGTA KSD1616AGTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AYTA KSD1616AYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD880YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE48620638940D6&compId=KSD880.pdf?ci_sign=f673fa2a8126b65570c4afc7736b98d650074192 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Type of transistor: NPN
Mounting: THT
Power dissipation: 30W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 100...200
Frequency: 3MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA928AYTA KSA928AYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE30A131AC300D6&compId=KSA928A.PDF?ci_sign=23220499c41c3c7681a657e40cf16bd7df36a9f4 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383OTA KSC2383OTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3BA56433280D6&compId=KSC2383.pdf?ci_sign=f52c045d8f4dd7fee0a7603c263b16f1125bf694 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
160+0.45 EUR
350+0.2 EUR
371+0.19 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008CYTA KSC1008CYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
253+0.28 EUR
323+0.22 EUR
477+0.15 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YBU KSC1008YBU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YTA KSC1008YTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002 2N7002 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 71484 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
199+0.36 EUR
234+0.31 EUR
329+0.22 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
NTHL075N065SC1 NTHL075N065SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDAE9828496F60D6&compId=NTHL075N065SC1.PDF?ci_sign=430aea5e6198bb2ffbb8f61c66a0b836c3d03f91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC1G09DTT1G
+1
 		MC74VHC1G09DTT1G ONSEMI mc74vhc1g09-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: AND
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
550+0.13 EUR
582+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
NLSV1T34DFT2G NLSV1T34DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598BA2109CB4E611C&compId=NLSV1T34DFT2G.PDF?ci_sign=d6d5abd1422ede23756fd3da5e4360215918d835 Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
123+0.58 EUR
130+0.55 EUR
500+0.53 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
1N4448 1N4448 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9A1FBFD6582259&compId=1n4448-f.pdf?ci_sign=df8b65112dab024043ac0dabc4269c9e3544b125 Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 2006 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
1283+0.056 EUR
1755+0.041 EUR
2006+0.036 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
1N5401G 1N5401G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
277+0.26 EUR
353+0.2 EUR
385+0.19 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
4N25M 4N25M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
151+0.48 EUR
189+0.38 EUR
232+0.31 EUR
246+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
1N4004G 1N4004G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
610+0.12 EUR
725+0.099 EUR
1205+0.059 EUR
1397+0.051 EUR
1498+0.048 EUR
1539+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
6N136VM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.87 EUR
200+2.52 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1N4006G 1N4006G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1223+0.058 EUR
1296+0.055 EUR
1345+0.053 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT139DG MC74ACT139DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Technology: TTL
Family: ACT
Number of inputs: 3
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
103+0.7 EUR
135+0.53 EUR
143+0.5 EUR
145+0.49 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
6N137SM 6N137SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C009602B2C0D6&compId=4N35SM.pdf?ci_sign=3eaab7f0259a092f322f6e19ac3b19ae03db130c pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00A397B500D6&compId=6N137SM.pdf?ci_sign=7e56d56cde6cce4ea490ba6ace212c3fc283dc02 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
71+1.02 EUR
91+0.79 EUR
96+0.75 EUR
500+0.74 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
FQD8P10TM FQD8P10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1218 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
71+1.02 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
DTA115EET1G DTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
562+0.13 EUR
921+0.078 EUR
1651+0.043 EUR
1749+0.041 EUR
3000+0.04 EUR
6000+0.039 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
6N136SM ONSEMI hcpl2530m-d.pdf DD93217-6N135_136-ICPL4502_4503-240717.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1298YMTF KSA1298YMTF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2DE4E506540D6&compId=KSA1298.PDF?ci_sign=3f00d0a44fadb11b5c53cb7c184226605f0235aa Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1892 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
443+0.16 EUR
782+0.092 EUR
1673+0.043 EUR
1767+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
FXMA2104UMX FXMA2104UMX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C48D820&compId=FXMA2104UMX.pdf?ci_sign=7c0f95d4bc8386e736e4aa212eaef2a0fc8a85df Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 3647 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
1N4005G 1N4005G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
532+0.13 EUR
596+0.12 EUR
715+0.1 EUR
939+0.076 EUR
1489+0.048 EUR
1573+0.045 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
FSUSB242GEVB ONSEMI Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+156.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF4007 UF4007 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335 Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
232+0.31 EUR
264+0.27 EUR
404+0.18 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40N65SMD ONSEMI fga40n65smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SHD-F155 ONSEMI fgh60t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SQD-F155 ONSEMI fgh60t65sqd-f155-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40T65SHD ONSEMI fga40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB40T65SPD-F085 FGB40T65SPD-F085 ONSEMI fgb40t65spd-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
auf Bestellung 753 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.31 EUR
18+4.16 EUR
19+3.95 EUR
100+3.9 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 ONSEMI fgh40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 ONSEMI fgh40t65shdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 ONSEMI fgh40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQD ONSEMI fghl40t65mqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQDT ONSEMI fghl40t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPG TL431ACLPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPRAG TL431ACLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS36 SS36 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 1907 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
129+0.55 EUR
186+0.39 EUR
197+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCLPRAG TL431BCLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BILPRAG TL431BILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3100TSX FAN3100TSX ONSEMI fan3100t-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2976 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
65+1.11 EUR
94+0.77 EUR
99+0.73 EUR
250+0.71 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T120SQDNL4 ONSEMI fgh40t120sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120RWD ONSEMI fghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CNY173SM pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5
CNY173SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
174+0.41 EUR
195+0.37 EUR
205+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CNY173SR2VM pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE15500065C745&compId=CNY172M.pdf?ci_sign=9aa5dceae1f8043b24543a67c5b38104b946659a
CNY173SR2VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
156+0.46 EUR
167+0.43 EUR
184+0.39 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
KSD1691GS
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
auf Bestellung 1989 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
51+1.41 EUR
59+1.22 EUR
72+1.01 EUR
108+0.66 EUR
114+0.63 EUR
500+0.6 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GSTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YSTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGBU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AGBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: bulk
Polarisation: bipolar
auf Bestellung 6578 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
160+0.45 EUR
196+0.37 EUR
432+0.17 EUR
496+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AGTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 200...400
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AYTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Collector-emitter voltage: 60V
Current gain: 135...270
Frequency: 160MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD880YTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE48620638940D6&compId=KSD880.pdf?ci_sign=f673fa2a8126b65570c4afc7736b98d650074192
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Type of transistor: NPN
Mounting: THT
Power dissipation: 30W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 100...200
Frequency: 3MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA928AYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE30A131AC300D6&compId=KSA928A.PDF?ci_sign=23220499c41c3c7681a657e40cf16bd7df36a9f4
KSA928AYTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383OTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE3BA56433280D6&compId=KSC2383.pdf?ci_sign=f52c045d8f4dd7fee0a7603c263b16f1125bf694
KSC2383OTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
160+0.45 EUR
350+0.2 EUR
371+0.19 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008CYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008CYTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
auf Bestellung 1506 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
253+0.28 EUR
323+0.22 EUR
477+0.15 EUR
770+0.093 EUR
820+0.087 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YBU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008YBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2N7002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 71484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
199+0.36 EUR
234+0.31 EUR
329+0.22 EUR
371+0.19 EUR
685+0.1 EUR
725+0.099 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
NTHL075N065SC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDAE9828496F60D6&compId=NTHL075N065SC1.PDF?ci_sign=430aea5e6198bb2ffbb8f61c66a0b836c3d03f91
NTHL075N065SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC1G09DTT1G mc74vhc1g09-d.pdf
MC74VHC1G09DTT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 2
Kind of gate: AND
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
550+0.13 EUR
582+0.12 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
NLSV1T34DFT2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE598BA2109CB4E611C&compId=NLSV1T34DFT2G.PDF?ci_sign=d6d5abd1422ede23756fd3da5e4360215918d835
NLSV1T34DFT2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
123+0.58 EUR
130+0.55 EUR
500+0.53 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
1N4448 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF9A1FBFD6582259&compId=1n4448-f.pdf?ci_sign=df8b65112dab024043ac0dabc4269c9e3544b125
1N4448
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 2006 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1283+0.056 EUR
1755+0.041 EUR
2006+0.036 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
1N5401G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c
1N5401G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 459 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
277+0.26 EUR
353+0.2 EUR
385+0.19 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
4N25M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283
4N25M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
151+0.48 EUR
189+0.38 EUR
232+0.31 EUR
246+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
1N4004G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4004G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.1V
Type of diode: rectifying
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
610+0.12 EUR
725+0.099 EUR
1205+0.059 EUR
1397+0.051 EUR
1498+0.048 EUR
1539+0.046 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
6N136VM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+2.87 EUR
200+2.52 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1N4006G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4006G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1223+0.058 EUR
1296+0.055 EUR
1345+0.053 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT139DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d
MC74ACT139DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Technology: TTL
Family: ACT
Number of inputs: 3
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
103+0.7 EUR
135+0.53 EUR
143+0.5 EUR
145+0.49 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
6N137SM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C009602B2C0D6&compId=4N35SM.pdf?ci_sign=3eaab7f0259a092f322f6e19ac3b19ae03db130c pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00A397B500D6&compId=6N137SM.pdf?ci_sign=7e56d56cde6cce4ea490ba6ace212c3fc283dc02
6N137SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
71+1.02 EUR
91+0.79 EUR
96+0.75 EUR
500+0.74 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
FQD8P10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
71+1.02 EUR
81+0.89 EUR
146+0.49 EUR
154+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
DTA115EET1G dta115e-d.pdf
DTA115EET1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
562+0.13 EUR
921+0.078 EUR
1651+0.043 EUR
1749+0.041 EUR
3000+0.04 EUR
6000+0.039 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
6N136SM hcpl2530m-d.pdf DD93217-6N135_136-ICPL4502_4503-240717.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1298YMTF pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2DE4E506540D6&compId=KSA1298.PDF?ci_sign=3f00d0a44fadb11b5c53cb7c184226605f0235aa
KSA1298YMTF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1892 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
443+0.16 EUR
782+0.092 EUR
1673+0.043 EUR
1767+0.04 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
FXMA2104UMX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C48D820&compId=FXMA2104UMX.pdf?ci_sign=7c0f95d4bc8386e736e4aa212eaef2a0fc8a85df
FXMA2104UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 3647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
1N4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4005G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
532+0.13 EUR
596+0.12 EUR
715+0.1 EUR
939+0.076 EUR
1489+0.048 EUR
1573+0.045 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
FSUSB242GEVB
Hersteller: ONSEMI
Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+156.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF4007 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335
UF4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
232+0.31 EUR
264+0.27 EUR
404+0.18 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40N65SMD fga40n65smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SHD-F155 fgh60t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40T65SHD fga40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB40T65SPD-F085 fgb40t65spd-f085-d.pdf
FGB40T65SPD-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
auf Bestellung 753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.31 EUR
18+4.16 EUR
19+3.95 EUR
100+3.9 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 fgh40t65shdf-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 fgh40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQD fghl40t65mqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQDT fghl40t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPG tl431-d.pdf
TL431ACLPG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPRAG tl431-d.pdf
TL431ACLPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
SS36
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 1907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
129+0.55 EUR
186+0.39 EUR
197+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCLPRAG tl431-d.pdf
TL431BCLPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BILPRAG tl431-d.pdf
TL431BILPRAG
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3100TSX fan3100t-d.pdf
FAN3100TSX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
65+1.11 EUR
94+0.77 EUR
99+0.73 EUR
250+0.71 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T120SQDNL4 fgh40t120sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120RWD fghl40t120rwd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 711 948 1185 1422 1659 1896 2133 2293 2294 2295 2296 2297 2298 2299 2300 2301 2302 2303 2370 2373  [ Nächste Seite >> ]