| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.66 EUR |
| 10+ | 7.96 EUR |
| 100+ | 7.25 EUR |
| 500+ | 6.64 EUR |
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Technische Details FFSP2065BDN-F085 onsemi
Description: DIODE SIL CARB 650V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 421pF @ 1V, 100kHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-3, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote FFSP2065BDN-F085 nach Preis ab 5.72 EUR bis 14.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FFSP2065BDN-F085 | onsemi |
 Description: DIODE SIL CARB 650V 10A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 2104 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSP2065BDN-F085 | ON Semiconductor |
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auf Bestellung 760 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSP2065BDN-F085 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 2104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.68 EUR |
| 50+ | 7.93 EUR |
| 100+ | 7.27 EUR |
| 500+ | 6.13 EUR |
| 1000+ | 5.77 EUR |
| 2000+ | 5.72 EUR |
| FFSP2065BDN-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 760 Stücke:
Lieferzeit 21-28 Tag (e)