FGH40T120SMD ON Semiconductor
auf Bestellung 3808 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 12.32 EUR |
| 15+ | 10.5 EUR |
| 25+ | 8.77 EUR |
| 100+ | 7.89 EUR |
| 250+ | 7.37 EUR |
| 450+ | 6.64 EUR |
| 900+ | 5.76 EUR |
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Technische Details FGH40T120SMD ON Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/475ns, Switching Energy: 2.7mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 555 W.
Weitere Produktangebote FGH40T120SMD nach Preis ab 5.77 EUR bis 25.35 EUR
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FGH40T120SMD | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 3808 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40T120SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH40T120SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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FGH40T120SMD | Hersteller : onsemi |
Description: IGBT TRENCH FS 1200V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
auf Bestellung 702 Stücke: Lieferzeit 21-28 Tag (e) |
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FGH40T120SMD | Hersteller : onsemi / Fairchild |
IGBT Transistors 1200V 40A FS2 Trench IGBT |
auf Bestellung 28 Stücke: Lieferzeit 14-28 Tag (e) |
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FGH40T120SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 3808 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH40T120SMD | Hersteller : ON-Semicoductor |
Single IGBT Transistors 1200V 40A FS2 Trench IGBT; 1.8V ; FGH40T120SMD TO-247-3L TFGH40T120smd Anzahl je Verpackung: 2 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGH40T120SMD | Hersteller : ON-Semicoductor |
Single IGBT Transistors 1200V 40A FS2 Trench IGBT; 1.8V ; FGH40T120SMD TO-247-3L TFGH40T120smd Anzahl je Verpackung: 2 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH40T120SMD Produktcode: 104369 |
Transistoren > Transistoren IGBT, Leistungsmodule ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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FGH40T120SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |