| Foto | Bezeichnung | Hersteller | Beschreibung |
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KSA992FATA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: PNP Case: TO92 Formed Mounting: THT Collector current: 50mA Power dissipation: 0.5W Collector-emitter voltage: 120V Current gain: 300...470 Kind of package: Ammo Pack Frequency: 100MHz Polarisation: bipolar |
auf Bestellung 1335 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA992FBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Type of transistor: PNP Case: TO92 Mounting: THT Collector current: 50mA Power dissipation: 0.5W Collector-emitter voltage: 120V Current gain: 300...600 Kind of package: bulk Frequency: 100MHz Polarisation: bipolar |
auf Bestellung 5291 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA992FTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed Type of transistor: PNP Case: TO92 Formed Mounting: THT Collector current: 50mA Power dissipation: 0.5W Collector-emitter voltage: 120V Current gain: 300...600 Kind of package: Ammo Pack Frequency: 100MHz Polarisation: bipolar |
auf Bestellung 1869 Stücke: Lieferzeit 14-21 Tag (e) |
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KSB772YS | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 3A Power dissipation: 1W Case: TO126ISO Pulsed collector current: 7A Current gain: 160...320 Mounting: THT Kind of package: bulk Frequency: 80MHz |
auf Bestellung 1640 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSE13003H2ASTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO Type of transistor: NPN Mounting: THT Case: TO126ISO Collector current: 1.5A Power dissipation: 20W Pulsed collector current: 3A Current gain: 14...21 Collector-emitter voltage: 400V Frequency: 4MHz Kind of package: tube Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSC1815YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.4W Case: TO92 Formed Current gain: 120...240 Mounting: THT Kind of package: Ammo Pack Frequency: 80MHz |
auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC857BWT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSD2012GTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Collector current: 3A Power dissipation: 25W Collector-emitter voltage: 60V Current gain: 150...320 Frequency: 3MHz Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CNY173M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY173SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 867 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY173SR2VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 1790 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1691GS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 200...400 Polarisation: bipolar Kind of package: bulk Type of transistor: NPN |
auf Bestellung 1977 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSD1691GSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 200...400 Polarisation: bipolar Kind of package: tube Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| KSD1691YS | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar Kind of package: bulk Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| KSD1691YSTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Case: TO126ISO Collector current: 5A Pulsed collector current: 8A Power dissipation: 20W Collector-emitter voltage: 60V Current gain: 160...320 Polarisation: bipolar Kind of package: tube Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSD1616AGBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Case: TO92 Mounting: THT Power dissipation: 0.75W Collector current: 1A Pulsed collector current: 2A Type of transistor: NPN Collector-emitter voltage: 60V Polarisation: bipolar Current gain: 200...400 Kind of package: bulk Frequency: 160MHz |
auf Bestellung 6574 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1616AGTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed Case: TO92 Formed Mounting: THT Power dissipation: 0.75W Collector current: 1A Type of transistor: NPN Collector-emitter voltage: 60V Polarisation: bipolar Current gain: 200...400 Kind of package: Ammo Pack Frequency: 160MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1616AYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Case: TO92 Mounting: THT Power dissipation: 0.75W Collector current: 1A Type of transistor: NPN Collector-emitter voltage: 60V Polarisation: bipolar Current gain: 135...270 Kind of package: Ammo Pack Frequency: 160MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| KSD880YTU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Collector-emitter voltage: 60V Current gain: 100...200 Polarisation: bipolar Frequency: 3MHz Type of transistor: NPN Collector current: 3A Power dissipation: 30W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSA928AYTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Frequency: 120MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSC2383OTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 1951 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008CYTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Case: TO92 Formed Type of transistor: NPN Mounting: THT Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC1008YBU | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Mounting: THT Case: TO92 Type of transistor: NPN Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: bulk Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSC1008YTA | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed Mounting: THT Case: TO92 Formed Type of transistor: NPN Collector current: 0.7A Power dissipation: 0.8W Collector-emitter voltage: 60V Current gain: 120...240 Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 71208 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 61nC On-state resistance: 68mΩ Technology: SiC Power dissipation: 74W Pulsed drain current: 120A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74VHC1G09DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: TSSOP5 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: open drain Technology: CMOS Number of inputs: 2 Kind of gate: AND Family: VHC Quiescent current: 40µA |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
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NLSV1T34DFT2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Case: SOT353 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 2µA Supply voltage: 0.9...4.5V DC Number of outputs: 1 |
auf Bestellung 958 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.4A Max. forward impulse current: 4A Power dissipation: 0.5W |
auf Bestellung 1896 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5401G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
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4N25M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V Mounting: THT Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 20%@10mA Insulation voltage: 0.85kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor Turn-off time: 2µs Turn-on time: 2µs |
auf Bestellung 1186 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
auf Bestellung 1839 Stücke: Lieferzeit 14-21 Tag (e) |
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| 6N136VM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: 6N136M |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4006G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 1000pcs. |
auf Bestellung 1675 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT139DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: ACT Number of inputs: 3 Kind of package: tube |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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6N137SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 30ns Manufacturer series: 6N137M |
auf Bestellung 2079 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD8P10TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA115EET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...150 Base resistor: 100kΩ Base-emitter resistor: 100kΩ Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 6N136SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; 5kV Type of optocoupler: optocoupler Insulation voltage: 5kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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KSA1298YMTF | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.8A Power dissipation: 0.2W Case: SOT23; TO236AB Current gain: 100...320 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 1673 Stücke: Lieferzeit 14-21 Tag (e) |
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FXMA2104UMX | ONSEMI |
Category: Level translatorsDescription: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 4 Case: MLP12 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of outputs: 4 Number of inputs: 4 Frequency: 26MHz Kind of output: open drain Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing |
auf Bestellung 3636 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4005G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Quantity in set/package: 1000pcs. Kind of package: bulk Case: CASE59 |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| FSUSB242GEVB | ONSEMI |
Category: Unclassified Description: FSUSB242GEVB |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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UF4007 | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Power dissipation: 2.08W Leakage current: 75µA Capacitance: 17pF |
auf Bestellung 1132 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH40N60SMD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Power dissipation: 174W Case: TO247-3 Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Collector current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGAF40N60SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 40A; 58W; TO3PF Type of transistor: IGBT Power dissipation: 58W Case: TO3PF Mounting: THT Gate charge: 119nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 600V Collector current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGAF40N60UFTU | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Power dissipation: 40W Case: TO3PF Mounting: THT Gate charge: 77nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 160A Collector-emitter voltage: 600V Collector current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGB20N60SFD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD Type of transistor: IGBT Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 600V Version: ESD Application: ignition systems Features of semiconductor devices: logic level Gate charge: 63nC Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGA40N65SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 174W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 174W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGH60T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGH60T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 167W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 167W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 79nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGA40T65SHD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO3P Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 72.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
FGB40T65SPD-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Application: ignition systems Version: ESD Features of semiconductor devices: logic level Gate charge: 36nC |
auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH40T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Gate charge: 72.2nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGH40T65SHDF-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Gate charge: 68nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGH40T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL40T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 86nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGHL40T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 80nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TL431ACDG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TL431ACDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSA992FATA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...470
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...470
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 311+ | 0.23 EUR |
| 374+ | 0.19 EUR |
| 526+ | 0.14 EUR |
| 766+ | 0.093 EUR |
| 1000+ | 0.082 EUR |
| KSA992FBU |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Case: TO92
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: bulk
Frequency: 100MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Case: TO92
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: bulk
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 5291 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 272+ | 0.26 EUR |
| 317+ | 0.23 EUR |
| 468+ | 0.15 EUR |
| 554+ | 0.13 EUR |
| 792+ | 0.09 EUR |
| 1000+ | 0.079 EUR |
| 2000+ | 0.07 EUR |
| KSA992FTA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 325+ | 0.22 EUR |
| 462+ | 0.16 EUR |
| 535+ | 0.13 EUR |
| 740+ | 0.097 EUR |
| 1000+ | 0.085 EUR |
| KSB772YS |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 119+ | 0.6 EUR |
| 174+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| KSE13003H2ASTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC1815YTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.4W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 80MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.4W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 80MHz
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 363+ | 0.2 EUR |
| 611+ | 0.12 EUR |
| 855+ | 0.084 EUR |
| 1000+ | 0.073 EUR |
| SBC857BWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 863+ | 0.083 EUR |
| KSD2012GTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CNY173M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 224+ | 0.32 EUR |
| 239+ | 0.3 EUR |
| 250+ | 0.29 EUR |
| CNY173SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 168+ | 0.43 EUR |
| 185+ | 0.39 EUR |
| 203+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| CNY173SR2VM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 156+ | 0.46 EUR |
| 183+ | 0.39 EUR |
| KSD1691GS |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
auf Bestellung 1977 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 57+ | 1.26 EUR |
| 66+ | 1.09 EUR |
| 80+ | 0.9 EUR |
| 106+ | 0.68 EUR |
| 500+ | 0.6 EUR |
| KSD1691GSTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1691YS |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1691YSTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1616AGBU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: bulk
Frequency: 160MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: bulk
Frequency: 160MHz
auf Bestellung 6574 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 179+ | 0.4 EUR |
| 219+ | 0.33 EUR |
| 481+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| KSD1616AGTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: Ammo Pack
Frequency: 160MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1616AYTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 135...270
Kind of package: Ammo Pack
Frequency: 160MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 135...270
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD880YTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA928AYTA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC2383OTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 178+ | 0.4 EUR |
| 272+ | 0.26 EUR |
| 321+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| KSC1008CYTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 283+ | 0.25 EUR |
| 360+ | 0.2 EUR |
| 532+ | 0.13 EUR |
| 770+ | 0.093 EUR |
| 1000+ | 0.084 EUR |
| KSC1008YBU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC1008YTA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 71208 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 214+ | 0.33 EUR |
| 253+ | 0.28 EUR |
| 355+ | 0.2 EUR |
| 400+ | 0.18 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 1500+ | 0.13 EUR |
| NTHL075N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Power dissipation: 74W
Pulsed drain current: 120A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Power dissipation: 74W
Pulsed drain current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1G09DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 705+ | 0.1 EUR |
| NLSV1T34DFT2G |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 94+ | 0.76 EUR |
| 109+ | 0.66 EUR |
| 126+ | 0.57 EUR |
| 500+ | 0.53 EUR |
| 1N4448 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1429+ | 0.05 EUR |
| 1896+ | 0.037 EUR |
| 1N5401G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 277+ | 0.26 EUR |
| 385+ | 0.19 EUR |
| 4N25M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 162+ | 0.44 EUR |
| 204+ | 0.35 EUR |
| 227+ | 0.32 EUR |
| 500+ | 0.28 EUR |
| 1N4004G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1839 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 676+ | 0.11 EUR |
| 807+ | 0.089 EUR |
| 1348+ | 0.053 EUR |
| 1539+ | 0.046 EUR |
| 6N136VM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 2.9 EUR |
| 200+ | 2.53 EUR |
| 1N4006G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 618+ | 0.12 EUR |
| 930+ | 0.077 EUR |
| 1217+ | 0.059 EUR |
| 1337+ | 0.053 EUR |
| MC74ACT139DG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 3
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 3
Kind of package: tube
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 103+ | 0.7 EUR |
| 126+ | 0.57 EUR |
| 138+ | 0.52 EUR |
| 145+ | 0.49 EUR |
| 6N137SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 2079 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 1.29 EUR |
| 77+ | 0.94 EUR |
| 84+ | 0.86 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.72 EUR |
| FQD8P10TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 76+ | 0.94 EUR |
| 87+ | 0.82 EUR |
| 119+ | 0.6 EUR |
| 136+ | 0.53 EUR |
| DTA115EET1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 603+ | 0.12 EUR |
| 995+ | 0.072 EUR |
| 1378+ | 0.052 EUR |
| 1573+ | 0.045 EUR |
| 3000+ | 0.039 EUR |
| 6N136SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA1298YMTF |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 477+ | 0.15 EUR |
| 844+ | 0.085 EUR |
| 1226+ | 0.058 EUR |
| 1413+ | 0.051 EUR |
| FXMA2104UMX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 3636 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 100+ | 0.72 EUR |
| 1N4005G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 802+ | 0.089 EUR |
| 1049+ | 0.068 EUR |
| 1397+ | 0.051 EUR |
| 1563+ | 0.046 EUR |
| 2000+ | 0.044 EUR |
| FSUSB242GEVB |
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 157.36 EUR |
| UF4007 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 258+ | 0.28 EUR |
| 295+ | 0.24 EUR |
| 451+ | 0.16 EUR |
| 527+ | 0.14 EUR |
| 589+ | 0.12 EUR |
| FGH40N60SMD-F085 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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| FGAF40N60SMD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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| FGAF40N60UFTU |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Produkt ist nicht verfügbar
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| FGB20N60SFD-F085 |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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| FGA40N65SMD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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| FGH60T65SHD-F155 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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| FGH60T65SQD-F155 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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| FGA40T65SHD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Produkt ist nicht verfügbar
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| FGB40T65SPD-F085 |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.98 EUR |
| 14+ | 5.22 EUR |
| 16+ | 4.7 EUR |
| 25+ | 3.99 EUR |
| 100+ | 3.8 EUR |
| FGH40T65SHD-F155 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FGH40T65SHDF-F155 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T65SQD-F155 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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| FGHL40T65MQD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Produkt ist nicht verfügbar
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| FGHL40T65MQDT |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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| TL431ACDG |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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| TL431ACDR2G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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