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KSA992FATA KSA992FATA ONSEMI KSA992.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...470
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
311+0.23 EUR
374+0.19 EUR
526+0.14 EUR
766+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 250
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KSA992FBU KSA992FBU ONSEMI KSA992.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Case: TO92
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: bulk
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 5291 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
272+0.26 EUR
317+0.23 EUR
468+0.15 EUR
554+0.13 EUR
792+0.09 EUR
1000+0.079 EUR
2000+0.07 EUR
Mindestbestellmenge: 209
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KSA992FTA KSA992FTA ONSEMI KSA992.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
325+0.22 EUR
462+0.16 EUR
535+0.13 EUR
740+0.097 EUR
1000+0.085 EUR
Mindestbestellmenge: 218
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KSB772YS KSB772YS ONSEMI KSB772.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
119+0.6 EUR
174+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 93
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KSE13003H2ASTU ONSEMI KSE13003.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSC1815YTA KSC1815YTA ONSEMI KSC1815.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.4W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 80MHz
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
363+0.2 EUR
611+0.12 EUR
855+0.084 EUR
1000+0.073 EUR
Mindestbestellmenge: 250
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SBC857BWT1G SBC857BWT1G ONSEMI BC85xBWT1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
863+0.083 EUR
Mindestbestellmenge: 455
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KSD2012GTU ONSEMI KSD2012.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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CNY173M CNY173M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
224+0.32 EUR
239+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 200
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CNY173SM CNY173SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
168+0.43 EUR
185+0.39 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 152
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CNY173SR2VM CNY173SR2VM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE15500065C745&compId=CNY172M.pdf?ci_sign=9aa5dceae1f8043b24543a67c5b38104b946659a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
156+0.46 EUR
183+0.39 EUR
Mindestbestellmenge: 112
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KSD1691GS KSD1691GS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
auf Bestellung 1977 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
57+1.26 EUR
66+1.09 EUR
80+0.9 EUR
106+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 46
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KSD1691GSTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSD1691YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSD1691YSTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616AGBU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: bulk
Frequency: 160MHz
auf Bestellung 6574 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
179+0.4 EUR
219+0.33 EUR
481+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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KSD1616AGTA KSD1616AGTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
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KSD1616AYTA KSD1616AYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 135...270
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
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KSD880YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE48620638940D6&compId=KSD880.pdf?ci_sign=f673fa2a8126b65570c4afc7736b98d650074192 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
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KSA928AYTA KSA928AYTA ONSEMI KSA928A.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Produkt ist nicht verfügbar
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KSC2383OTA KSC2383OTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
178+0.4 EUR
272+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 139
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KSC1008CYTA KSC1008CYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
283+0.25 EUR
360+0.2 EUR
532+0.13 EUR
770+0.093 EUR
1000+0.084 EUR
Mindestbestellmenge: 193
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KSC1008YBU KSC1008YBU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSC1008YTA KSC1008YTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 71208 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
214+0.33 EUR
253+0.28 EUR
355+0.2 EUR
400+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 152
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NTHL075N065SC1 NTHL075N065SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDAE9828496F60D6&compId=NTHL075N065SC1.PDF?ci_sign=430aea5e6198bb2ffbb8f61c66a0b836c3d03f91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Power dissipation: 74W
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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MC74VHC1G09DTT1G
+1
MC74VHC1G09DTT1G ONSEMI mc74vhc1g09-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
596+0.12 EUR
625+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 500
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NLSV1T34DFT2G NLSV1T34DFT2G ONSEMI NLSV1T34DFT2G.PDF Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
126+0.57 EUR
500+0.53 EUR
Mindestbestellmenge: 76
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1N4448 1N4448 ONSEMI 1n4448-f.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1429+0.05 EUR
1896+0.037 EUR
Mindestbestellmenge: 625
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1N5401G 1N5401G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
277+0.26 EUR
385+0.19 EUR
Mindestbestellmenge: 193
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4N25M 4N25M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
162+0.44 EUR
204+0.35 EUR
227+0.32 EUR
500+0.28 EUR
Mindestbestellmenge: 129
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1N4004G 1N4004G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1839 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
676+0.11 EUR
807+0.089 EUR
1348+0.053 EUR
1539+0.046 EUR
Mindestbestellmenge: 556
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6N136VM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.9 EUR
200+2.53 EUR
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1N4006G 1N4006G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1217+0.059 EUR
1337+0.053 EUR
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MC74ACT139DG MC74ACT139DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 3
Kind of package: tube
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
103+0.7 EUR
126+0.57 EUR
138+0.52 EUR
145+0.49 EUR
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6N137SM 6N137SM ONSEMI 4N35SM.pdf 6N137SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 2079 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.94 EUR
84+0.86 EUR
90+0.8 EUR
100+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 56
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FQD8P10TM FQD8P10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
76+0.94 EUR
87+0.82 EUR
119+0.6 EUR
136+0.53 EUR
Mindestbestellmenge: 59
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DTA115EET1G DTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
603+0.12 EUR
995+0.072 EUR
1378+0.052 EUR
1573+0.045 EUR
3000+0.039 EUR
Mindestbestellmenge: 385
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6N136SM ONSEMI DD93217-6N135_136-ICPL4502_4503-240717.pdf hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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KSA1298YMTF KSA1298YMTF ONSEMI KSA1298.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
477+0.15 EUR
844+0.085 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 334
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FXMA2104UMX FXMA2104UMX ONSEMI FXMA2104UMX.pdf Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 3636 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
100+0.72 EUR
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1N4005G 1N4005G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
596+0.12 EUR
667+0.11 EUR
802+0.089 EUR
1049+0.068 EUR
1397+0.051 EUR
1563+0.046 EUR
2000+0.044 EUR
Mindestbestellmenge: 500
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FSUSB242GEVB ONSEMI Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+157.36 EUR
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UF4007 UF4007 ONSEMI UF4001.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
258+0.28 EUR
295+0.24 EUR
451+0.16 EUR
527+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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FGA40N65SMD ONSEMI fga40n65smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 ONSEMI fgh60t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH60T65SQD-F155 ONSEMI fgh60t65sqd-f155-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGA40T65SHD ONSEMI fga40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Produkt ist nicht verfügbar
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FGB40T65SPD-F085 FGB40T65SPD-F085 ONSEMI fgb40t65spd-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.98 EUR
14+5.22 EUR
16+4.7 EUR
25+3.99 EUR
100+3.8 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 ONSEMI fgh40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 ONSEMI fgh40t65shdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 ONSEMI fgh40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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FGHL40T65MQD ONSEMI fghl40t65mqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Produkt ist nicht verfügbar
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FGHL40T65MQDT ONSEMI fghl40t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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TL431ACDG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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KSA992FATA KSA992.PDF
KSA992FATA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...470
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
311+0.23 EUR
374+0.19 EUR
526+0.14 EUR
766+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 250
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KSA992FBU KSA992.PDF
KSA992FBU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92
Type of transistor: PNP
Case: TO92
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: bulk
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 5291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
272+0.26 EUR
317+0.23 EUR
468+0.15 EUR
554+0.13 EUR
792+0.09 EUR
1000+0.079 EUR
2000+0.07 EUR
Mindestbestellmenge: 209
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KSA992FTA KSA992.PDF
KSA992FTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.5W; TO92 Formed
Type of transistor: PNP
Case: TO92 Formed
Mounting: THT
Collector current: 50mA
Power dissipation: 0.5W
Collector-emitter voltage: 120V
Current gain: 300...600
Kind of package: Ammo Pack
Frequency: 100MHz
Polarisation: bipolar
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
325+0.22 EUR
462+0.16 EUR
535+0.13 EUR
740+0.097 EUR
1000+0.085 EUR
Mindestbestellmenge: 218
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KSB772YS KSB772.pdf
KSB772YS
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Pulsed collector current: 7A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Frequency: 80MHz
auf Bestellung 1640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
119+0.6 EUR
174+0.41 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 93
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KSE13003H2ASTU KSE13003.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 20W; TO126ISO
Type of transistor: NPN
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 20W
Pulsed collector current: 3A
Current gain: 14...21
Collector-emitter voltage: 400V
Frequency: 4MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSC1815YTA KSC1815.pdf
KSC1815YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.4W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.4W
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 80MHz
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
363+0.2 EUR
611+0.12 EUR
855+0.084 EUR
1000+0.073 EUR
Mindestbestellmenge: 250
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SBC857BWT1G BC85xBWT1.pdf
SBC857BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
863+0.083 EUR
Mindestbestellmenge: 455
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KSD2012GTU KSD2012.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 25W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 3A
Power dissipation: 25W
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 3MHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CNY173M pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5
CNY173M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
224+0.32 EUR
239+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
CNY173SM pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBB4AB818DD0A469&compId=CNY173M.pdf?ci_sign=2aebd233872bd2136a2f58113ab7772d2db986f5
CNY173SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
168+0.43 EUR
185+0.39 EUR
203+0.35 EUR
214+0.33 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
CNY173SR2VM pVersion=0046&contRep=ZT&docId=005056AB752F1EE786BE15500065C745&compId=CNY172M.pdf?ci_sign=9aa5dceae1f8043b24543a67c5b38104b946659a
CNY173SR2VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
156+0.46 EUR
183+0.39 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
KSD1691GS
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
auf Bestellung 1977 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
57+1.26 EUR
66+1.09 EUR
80+0.9 EUR
106+0.68 EUR
500+0.6 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691GSTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 200...400
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: bulk
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1691YSTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE46058E47340D6&compId=KSD1691.pdf?ci_sign=c4fb070e96a3e08968a4d415284a7a3adf1d056e
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Case: TO126ISO
Collector current: 5A
Pulsed collector current: 8A
Power dissipation: 20W
Collector-emitter voltage: 60V
Current gain: 160...320
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGBU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AGBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: bulk
Frequency: 160MHz
auf Bestellung 6574 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
179+0.4 EUR
219+0.33 EUR
481+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AGTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AGTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Case: TO92 Formed
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 200...400
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD1616AYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE45AC2926140D6&compId=KSD1616A.pdf?ci_sign=bc1e1f60b45e68295cb0d253d06c58ea30ae2025
KSD1616AYTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Case: TO92
Mounting: THT
Power dissipation: 0.75W
Collector current: 1A
Type of transistor: NPN
Collector-emitter voltage: 60V
Polarisation: bipolar
Current gain: 135...270
Kind of package: Ammo Pack
Frequency: 160MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD880YTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE48620638940D6&compId=KSD880.pdf?ci_sign=f673fa2a8126b65570c4afc7736b98d650074192
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA928AYTA KSA928A.PDF
KSA928AYTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC2383OTA KSC2383.pdf
KSC2383OTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1951 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
178+0.4 EUR
272+0.26 EUR
321+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008CYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008CYTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Case: TO92 Formed
Type of transistor: NPN
Mounting: THT
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
283+0.25 EUR
360+0.2 EUR
532+0.13 EUR
770+0.093 EUR
1000+0.084 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YBU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008YBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC1008YTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE360DAA2D640D6&compId=KSC1008.pdf?ci_sign=d42da730da82ea460afe32655f9505a1c9c6eae6
KSC1008YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Type of transistor: NPN
Collector current: 0.7A
Power dissipation: 0.8W
Collector-emitter voltage: 60V
Current gain: 120...240
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
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2N7002 2N7000_2N7002_NDS7002A.PDF
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 71208 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
214+0.33 EUR
253+0.28 EUR
355+0.2 EUR
400+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
NTHL075N065SC1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDAE9828496F60D6&compId=NTHL075N065SC1.PDF?ci_sign=430aea5e6198bb2ffbb8f61c66a0b836c3d03f91
NTHL075N065SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Power dissipation: 74W
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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MC74VHC1G09DTT1G mc74vhc1g09-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: open drain
Technology: CMOS
Number of inputs: 2
Kind of gate: AND
Family: VHC
Quiescent current: 40µA
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
625+0.11 EUR
705+0.1 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
NLSV1T34DFT2G NLSV1T34DFT2G.PDF
NLSV1T34DFT2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 2µA
Supply voltage: 0.9...4.5V DC
Number of outputs: 1
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
94+0.76 EUR
109+0.66 EUR
126+0.57 EUR
500+0.53 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
1N4448 1n4448-f.pdf
1N4448
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1429+0.05 EUR
1896+0.037 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
1N5401G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c
1N5401G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
277+0.26 EUR
385+0.19 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
4N25M 4N25M-ONS.pdf
4N25M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 0.85kV; Uce: 30V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 20%@10mA
Insulation voltage: 0.85kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
162+0.44 EUR
204+0.35 EUR
227+0.32 EUR
500+0.28 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
1N4004G 1N4001-D.PDF
1N4004G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
676+0.11 EUR
807+0.089 EUR
1348+0.053 EUR
1539+0.046 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
6N136VM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: 6N136M
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+2.9 EUR
200+2.53 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1N4006G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4006G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1217+0.059 EUR
1337+0.053 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT139DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d
MC74ACT139DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: ACT
Number of inputs: 3
Kind of package: tube
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
103+0.7 EUR
126+0.57 EUR
138+0.52 EUR
145+0.49 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
6N137SM 4N35SM.pdf 6N137SM.pdf
6N137SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 2079 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
77+0.94 EUR
84+0.86 EUR
90+0.8 EUR
100+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 56
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FQD8P10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
76+0.94 EUR
87+0.82 EUR
119+0.6 EUR
136+0.53 EUR
Mindestbestellmenge: 59
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DTA115EET1G dta115e-d.pdf
DTA115EET1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
603+0.12 EUR
995+0.072 EUR
1378+0.052 EUR
1573+0.045 EUR
3000+0.039 EUR
Mindestbestellmenge: 385
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6N136SM DD93217-6N135_136-ICPL4502_4503-240717.pdf hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; 5kV
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Produkt ist nicht verfügbar
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KSA1298YMTF KSA1298.PDF
KSA1298YMTF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.8A
Power dissipation: 0.2W
Case: SOT23; TO236AB
Current gain: 100...320
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 1673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
477+0.15 EUR
844+0.085 EUR
1226+0.058 EUR
1413+0.051 EUR
Mindestbestellmenge: 334
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FXMA2104UMX FXMA2104UMX.pdf
FXMA2104UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of outputs: 4
Number of inputs: 4
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
auf Bestellung 3636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99
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1N4005G 1N4001-D.PDF
1N4005G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1000pcs.
Kind of package: bulk
Case: CASE59
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
667+0.11 EUR
802+0.089 EUR
1049+0.068 EUR
1397+0.051 EUR
1563+0.046 EUR
2000+0.044 EUR
Mindestbestellmenge: 500
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FSUSB242GEVB
Hersteller: ONSEMI
Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+157.36 EUR
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UF4007 UF4001.pdf
UF4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Power dissipation: 2.08W
Leakage current: 75µA
Capacitance: 17pF
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
258+0.28 EUR
295+0.24 EUR
451+0.16 EUR
527+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 200
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FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Collector current: 40A
Produkt ist nicht verfügbar
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FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Collector current: 20A
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Version: ESD
Application: ignition systems
Features of semiconductor devices: logic level
Gate charge: 63nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Produkt ist nicht verfügbar
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FGA40N65SMD fga40n65smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 fgh60t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGA40T65SHD fga40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO3P
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 72.2nC
Produkt ist nicht verfügbar
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FGB40T65SPD-F085 fgb40t65spd-f085-d.pdf
FGB40T65SPD-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.98 EUR
14+5.22 EUR
16+4.7 EUR
25+3.99 EUR
100+3.8 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 72.2nC
Produkt ist nicht verfügbar
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FGH40T65SHDF-F155 fgh40t65shdf-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 68nC
Produkt ist nicht verfügbar
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FGH40T65SQD-F155 fgh40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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FGHL40T65MQD fghl40t65mqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 86nC
Produkt ist nicht verfügbar
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FGHL40T65MQDT fghl40t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 80nC
Produkt ist nicht verfügbar
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TL431ACDG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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