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MC74HC245ADWR2G ONSEMI MC74HC245A-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AMTC MM74HC245AMTC ONSEMI MM74HC245A-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.7 EUR
82+1.04 EUR
101+0.84 EUR
122+0.7 EUR
Mindestbestellmenge: 50 Stücke
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MM74HC245AMTCX MM74HC245AMTCX ONSEMI MM74HC245A-D.PDF FAIRS32532-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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MM74HC245AWM MM74HC245AWM ONSEMI MM74HC245A.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
84+1.02 EUR
116+0.74 EUR
118+0.71 EUR
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MM74HC245AWMX MM74HC245AWMX ONSEMI MM74HC245A-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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BD13916S BD13916S ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BD13916STU BD13916STU ONSEMI BD135_137_139.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
auf Bestellung 1818 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.24 EUR
121+0.7 EUR
138+0.62 EUR
156+0.55 EUR
172+0.5 EUR
540+0.4 EUR
1020+0.38 EUR
Mindestbestellmenge: 69 Stücke
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BD139G BD139G ONSEMI BD135-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000-D26Z 2N7000-D26Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.75 EUR
170+0.5 EUR
241+0.36 EUR
281+0.3 EUR
500+0.2 EUR
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2N7000-D74Z 2N7000-D74Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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2N7000-D75Z 2N7000-D75Z ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 1809 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
207+0.42 EUR
348+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 136 Stücke
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2N7000BU 2N7000BU ONSEMI 2N7000TA.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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2N7000TA 2N7000TA ONSEMI 2N7000TA.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
98+0.87 EUR
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BS170 BS170 ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 8436 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
184+0.46 EUR
215+0.39 EUR
388+0.21 EUR
472+0.18 EUR
538+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
Mindestbestellmenge: 152 Stücke
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BS170-D75Z BS170-D75Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.32 EUR
304+0.29 EUR
394+0.21 EUR
582+0.14 EUR
Mindestbestellmenge: 264 Stücke
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BS170-D26Z BS170-D26Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 1279 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
178+0.48 EUR
216+0.39 EUR
249+0.35 EUR
290+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 125 Stücke
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BS170-D27Z BS170-D27Z ONSEMI BS170,MMBF170.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 3276 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
217+0.39 EUR
285+0.3 EUR
348+0.25 EUR
417+0.2 EUR
511+0.17 EUR
575+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 143 Stücke
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BC807-40LT1G BC807-40LT1G ONSEMI BC807-xxL.pdf description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 13880 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
603+0.14 EUR
920+0.093 EUR
1107+0.077 EUR
1316+0.064 EUR
1624+0.052 EUR
1866+0.045 EUR
2017+0.042 EUR
3000+0.038 EUR
Mindestbestellmenge: 455 Stücke
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BC807-40LT3G BC807-40LT3G ONSEMI BC807-16LT1-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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BD140G BD140G ONSEMI BD136G_BD140G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Kind of package: bulk
Case: TO225
Collector current: 1.5A
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...250
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.82 EUR
73+1.18 EUR
94+0.9 EUR
105+0.81 EUR
250+0.7 EUR
Mindestbestellmenge: 47 Stücke
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MMBD1401 MMBD1401 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 2314 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.15 EUR
725+0.12 EUR
774+0.11 EUR
795+0.11 EUR
828+0.1 EUR
906+0.094 EUR
1051+0.081 EUR
Mindestbestellmenge: 556 Stücke
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MMBD1403 MMBD1403 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: double series
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Produkt ist nicht verfügbar
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MMBD1404 MMBD1404 ONSEMI mmbd1405-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 414 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
358+0.24 EUR
410+0.2 EUR
Mindestbestellmenge: 278 Stücke
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MMBD1404A MMBD1404A ONSEMI mmbd1405a-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 175V
Load current: 0.6A
Produkt ist nicht verfügbar
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MMBD1405 MMBD1405 ONSEMI mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 5698 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
298+0.29 EUR
341+0.25 EUR
470+0.18 EUR
534+0.15 EUR
704+0.12 EUR
1000+0.11 EUR
3000+0.089 EUR
Mindestbestellmenge: 239 Stücke
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2N3904BU 2N3904BU ONSEMI 2N3904BU-DTE.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 8432 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
334+0.25 EUR
391+0.21 EUR
673+0.13 EUR
949+0.089 EUR
1083+0.079 EUR
2000+0.07 EUR
5000+0.062 EUR
Mindestbestellmenge: 250 Stücke
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2N3904TFR 2N3904TFR ONSEMI 2N3904-D.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
736+0.12 EUR
794+0.11 EUR
944+0.09 EUR
988+0.087 EUR
Mindestbestellmenge: 625 Stücke
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BSS138L BSS138L ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
366+0.24 EUR
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BSS138LT1G BSS138LT1G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 29661 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
321+0.26 EUR
401+0.21 EUR
478+0.18 EUR
569+0.15 EUR
828+0.1 EUR
1000+0.089 EUR
3000+0.074 EUR
6000+0.065 EUR
Mindestbestellmenge: 228 Stücke
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BSS138LT3G BSS138LT3G ONSEMI BSS138L.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS138W BSS138W ONSEMI 1779679449377189.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.74 EUR
Mindestbestellmenge: 18 Stücke
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LM2904DR2G LM2904DR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7191 Stücke:
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334+0.25 EUR
397+0.21 EUR
451+0.19 EUR
481+0.18 EUR
527+0.17 EUR
650+0.13 EUR
705+0.12 EUR
747+0.11 EUR
1000+0.11 EUR
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FGH40N60SFDTU FGH40N60SFDTU ONSEMI FGH40N60SFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 138 Stücke:
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14+6.3 EUR
16+5.62 EUR
19+4.56 EUR
30+3.81 EUR
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FGH40N60SMD FGH40N60SMD ONSEMI FGH40N60SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.5 EUR
16+5.53 EUR
19+4.66 EUR
30+4.08 EUR
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FGH40N60UFDTU FGH40N60UFDTU ONSEMI FGH40N60UFD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.07 EUR
26+3.3 EUR
30+2.84 EUR
120+2.82 EUR
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BCP53-10T1G BCP53-10T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.83 EUR
160+0.54 EUR
210+0.4 EUR
237+0.36 EUR
269+0.32 EUR
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BCP53-16T1G BCP53-16T1G ONSEMI BCP53_ser.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 15 Stücke:
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15+5.66 EUR
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BC856BDW1T1G BC856BDW1T1G ONSEMI BC856BDW1T1-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2996 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
589+0.14 EUR
866+0.099 EUR
1031+0.082 EUR
1475+0.057 EUR
1678+0.051 EUR
1786+0.048 EUR
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BC856BLT1G BC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3T5G ONSEMI BC856BM3-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
472+0.18 EUR
538+0.15 EUR
923+0.093 EUR
1348+0.063 EUR
1568+0.055 EUR
Mindestbestellmenge: 417 Stücke
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MMBT2222ALT1G MMBT2222ALT1G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 79230 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
685+0.12 EUR
1005+0.084 EUR
1185+0.071 EUR
1725+0.049 EUR
2017+0.042 EUR
3000+0.033 EUR
6000+0.029 EUR
9000+0.026 EUR
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MMBT2222ALT3G MMBT2222ALT3G ONSEMI MMBT2222.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G ONSEMI MMBT2222ATT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2188 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
863+0.099 EUR
1102+0.077 EUR
1208+0.07 EUR
1502+0.057 EUR
1749+0.049 EUR
1916+0.044 EUR
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MMBT2222AWT1G MMBT2222AWT1G ONSEMI MMBT2222AWT1G.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MMBT2222AWT3G MMBT2222AWT3G ONSEMI MMBT2222AWT1G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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1N5408RLG 1N5408RLG ONSEMI 1N540x.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; reel,tape; Ir: 50uA
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
auf Bestellung 214 Stücke:
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209+0.4 EUR
214+0.39 EUR
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FOD3120SD FOD3120SD ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.96 EUR
37+2.31 EUR
42+2.06 EUR
43+2.01 EUR
100+1.74 EUR
250+1.58 EUR
300+1.57 EUR
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FOD3120SDV FOD3120SDV ONSEMI FOD3120SD.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG ONSEMI MC74AC132DG.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Case: SO14
Mounting: SMD
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Technology: CMOS
auf Bestellung 618 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
204+0.42 EUR
218+0.39 EUR
232+0.37 EUR
248+0.35 EUR
275+0.32 EUR
550+0.31 EUR
Mindestbestellmenge: 152 Stücke
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BCP56-16T1G BCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 6951 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.8 EUR
169+0.5 EUR
214+0.39 EUR
239+0.36 EUR
266+0.32 EUR
500+0.27 EUR
1000+0.23 EUR
2000+0.19 EUR
3000+0.17 EUR
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BCP56-16T3G BCP56-16T3G ONSEMI BCP56T1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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SBCP56-16T1G SBCP56-16T1G ONSEMI BCP56_ser.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K ONSEMI 2N7002K-FSC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3346 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
272+0.31 EUR
329+0.26 EUR
565+0.15 EUR
700+0.12 EUR
987+0.087 EUR
1076+0.079 EUR
1500+0.076 EUR
3000+0.075 EUR
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2N7002KT1G 2N7002KT1G ONSEMI 2N7002K.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N4742A 1N4742A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
auf Bestellung 5948 Stücke:
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715+0.12 EUR
1352+0.063 EUR
1598+0.054 EUR
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1N4742ATR 1N4742ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
auf Bestellung 91 Stücke:
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91+0.94 EUR
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LM317TG LM317TG ONSEMI LM317.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Manufacturer series: LM317
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.87 EUR
119+0.71 EUR
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CAT24C16HU4I-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Access time: 900ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BC847CDXV6T1G BC847CDXV6T1G ONSEMI BC847CDXV6T1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.29 EUR
Mindestbestellmenge: 295 Stücke
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MC74HC245ADWR2G MC74HC245A-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AMTC MM74HC245A-D.pdf
MM74HC245AMTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+1.7 EUR
82+1.04 EUR
101+0.84 EUR
122+0.7 EUR
Mindestbestellmenge: 50 Stücke
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MM74HC245AMTCX MM74HC245A-D.PDF FAIRS32532-1.pdf?t.download=true&u=5oefqw
MM74HC245AMTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 160µA
Manufacturer series: HC
Produkt ist nicht verfügbar
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MM74HC245AWM MM74HC245A.pdf
MM74HC245AWM
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20-W; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
84+1.02 EUR
116+0.74 EUR
118+0.71 EUR
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MM74HC245AWMX MM74HC245A-D.PDF
MM74HC245AWMX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; SO20; HC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
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BD13916S BD135_137_139.PDF
BD13916S
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 1.25W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.25W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BD13916STU BD135_137_139.PDF
BD13916STU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 100...250
Mounting: THT
Kind of package: tube
auf Bestellung 1818 Stücke:
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69+1.24 EUR
121+0.7 EUR
138+0.62 EUR
156+0.55 EUR
172+0.5 EUR
540+0.4 EUR
1020+0.38 EUR
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BD139G BD135-D.PDF
BD139G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000-D26Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 862 Stücke:
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AnzahlPrivatkunde
114+0.75 EUR
170+0.5 EUR
241+0.36 EUR
281+0.3 EUR
500+0.2 EUR
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2N7000-D74Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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2N7000-D75Z 2N7000_2N7002_NDS7002A.PDF
2N7000-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: reel; tape
auf Bestellung 1809 Stücke:
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136+0.63 EUR
207+0.42 EUR
348+0.25 EUR
500+0.18 EUR
1000+0.15 EUR
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2N7000BU 2N7000TA.pdf
2N7000BU
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Produkt ist nicht verfügbar
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2N7000TA 2N7000TA.pdf
2N7000TA
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.11A
Pulsed drain current: 1A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: Ammo Pack
auf Bestellung 98 Stücke:
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98+0.87 EUR
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BS170 BS170,MMBF170.PDF
BS170
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 8436 Stücke:
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152+0.56 EUR
184+0.46 EUR
215+0.39 EUR
388+0.21 EUR
472+0.18 EUR
538+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
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BS170-D75Z BS170,MMBF170.PDF
BS170-D75Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 1996 Stücke:
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264+0.32 EUR
304+0.29 EUR
394+0.21 EUR
582+0.14 EUR
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BS170-D26Z BS170,MMBF170.PDF
BS170-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 1279 Stücke:
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125+0.68 EUR
178+0.48 EUR
216+0.39 EUR
249+0.35 EUR
290+0.3 EUR
500+0.21 EUR
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BS170-D27Z BS170,MMBF170.PDF
BS170-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 1.2A; 0.83W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.83W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Technology: DMOS
auf Bestellung 3276 Stücke:
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143+0.6 EUR
217+0.39 EUR
285+0.3 EUR
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511+0.17 EUR
575+0.14 EUR
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BC807-40LT1G description BC807-xxL.pdf
BC807-40LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 13880 Stücke:
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455+0.19 EUR
603+0.14 EUR
920+0.093 EUR
1107+0.077 EUR
1316+0.064 EUR
1624+0.052 EUR
1866+0.045 EUR
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BC807-40LT3G BC807-16LT1-D.PDF
BC807-40LT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BD140G BD136G_BD140G.PDF
BD140G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 12.5W; TO225
Kind of package: bulk
Case: TO225
Collector current: 1.5A
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 40...250
auf Bestellung 428 Stücke:
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47+1.82 EUR
73+1.18 EUR
94+0.9 EUR
105+0.81 EUR
250+0.7 EUR
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MMBD1401 mmbd1405-d.pdf
MMBD1401
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 2314 Stücke:
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556+0.15 EUR
725+0.12 EUR
774+0.11 EUR
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906+0.094 EUR
1051+0.081 EUR
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MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: double series
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
Produkt ist nicht verfügbar
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MMBD1404 mmbd1405-d.pdf
MMBD1404
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 414 Stücke:
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278+0.31 EUR
358+0.24 EUR
410+0.2 EUR
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MMBD1404A mmbd1405a-d.pdf
MMBD1404A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 175V; 0.6A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Max. off-state voltage: 175V
Load current: 0.6A
Produkt ist nicht verfügbar
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MMBD1405 mmbd1405-d.pdf FAIR-S-A0002364113-1.pdf?t.download=true&u=5oefqw
MMBD1405
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 0.1µA
Case: SOT23
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.1V
Power dissipation: 0.35W
Max. off-state voltage: 200V
Load current: 0.2A
auf Bestellung 5698 Stücke:
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239+0.36 EUR
298+0.29 EUR
341+0.25 EUR
470+0.18 EUR
534+0.15 EUR
704+0.12 EUR
1000+0.11 EUR
3000+0.089 EUR
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2N3904BU 2N3904BU-DTE.pdf
2N3904BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
auf Bestellung 8432 Stücke:
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250+0.35 EUR
334+0.25 EUR
391+0.21 EUR
673+0.13 EUR
949+0.089 EUR
1083+0.079 EUR
2000+0.07 EUR
5000+0.062 EUR
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2N3904TFR 2N3904-D.pdf
2N3904TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
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625+0.13 EUR
736+0.12 EUR
794+0.11 EUR
944+0.09 EUR
988+0.087 EUR
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BSS138L BSS138L.PDF
BSS138L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
366+0.24 EUR
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BSS138LT1G BSS138L.PDF
BSS138LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 29661 Stücke:
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228+0.37 EUR
321+0.26 EUR
401+0.21 EUR
478+0.18 EUR
569+0.15 EUR
828+0.1 EUR
1000+0.089 EUR
3000+0.074 EUR
6000+0.065 EUR
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BSS138LT3G BSS138L.PDF
BSS138LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; Idm: 0.8A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS138W 1779679449377189.pdf
BSS138W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.21A; 0.34W; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.21A
Power dissipation: 0.34W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 5.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 18 Stücke:
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18+4.74 EUR
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LM2904DR2G description lm358-d.pdf
LM2904DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
auf Bestellung 7191 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
397+0.21 EUR
451+0.19 EUR
481+0.18 EUR
527+0.17 EUR
650+0.13 EUR
705+0.12 EUR
747+0.11 EUR
1000+0.11 EUR
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FGH40N60SFDTU FGH40N60SFD.pdf
FGH40N60SFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 138 Stücke:
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14+6.3 EUR
16+5.62 EUR
19+4.56 EUR
30+3.81 EUR
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FGH40N60SMD FGH40N60SMD.pdf
FGH40N60SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 243 Stücke:
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14+6.5 EUR
16+5.53 EUR
19+4.66 EUR
30+4.08 EUR
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FGH40N60UFDTU FGH40N60UFD.pdf
FGH40N60UFDTU
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Power dissipation: 116W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 131 Stücke:
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17+5.07 EUR
26+3.3 EUR
30+2.84 EUR
120+2.82 EUR
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BCP53-10T1G BCP53_ser.pdf
BCP53-10T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 309 Stücke:
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103+0.83 EUR
160+0.54 EUR
210+0.4 EUR
237+0.36 EUR
269+0.32 EUR
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BCP53-16T1G BCP53_ser.pdf
BCP53-16T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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BC856BDW1T1G BC856BDW1T1-D.PDF
BC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2996 Stücke:
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455+0.19 EUR
589+0.14 EUR
866+0.099 EUR
1031+0.082 EUR
1475+0.057 EUR
1678+0.051 EUR
1786+0.048 EUR
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BC856BLT1G BC856_7_8.PDF
BC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BLT3G BC856_7_8.PDF
BC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC856BM3T5G BC856BM3-D.PDF
BC856BM3T5G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1800 Stücke:
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417+0.2 EUR
472+0.18 EUR
538+0.15 EUR
923+0.093 EUR
1348+0.063 EUR
1568+0.055 EUR
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MMBT2222ALT1G MMBT2222.PDF
MMBT2222ALT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 79230 Stücke:
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455+0.19 EUR
685+0.12 EUR
1005+0.084 EUR
1185+0.071 EUR
1725+0.049 EUR
2017+0.042 EUR
3000+0.033 EUR
6000+0.029 EUR
9000+0.026 EUR
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MMBT2222ALT3G MMBT2222.PDF
MMBT2222ALT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222ATT1G MMBT2222ATT1G.PDF
MMBT2222ATT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2188 Stücke:
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625+0.13 EUR
863+0.099 EUR
1102+0.077 EUR
1208+0.07 EUR
1502+0.057 EUR
1749+0.049 EUR
1916+0.044 EUR
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MMBT2222AWT1G description MMBT2222AWT1G.pdf
MMBT2222AWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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MMBT2222AWT3G MMBT2222AWT1G.pdf
MMBT2222AWT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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1N5408RLG description 1N540x.PDF
1N5408RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; reel,tape; Ir: 50uA
Max. off-state voltage: 1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
auf Bestellung 214 Stücke:
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209+0.4 EUR
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FOD3120SD FOD3120SD.pdf
FOD3120SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
auf Bestellung 396 Stücke:
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29+2.96 EUR
37+2.31 EUR
42+2.06 EUR
43+2.01 EUR
100+1.74 EUR
250+1.58 EUR
300+1.57 EUR
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FOD3120SDV FOD3120SD.pdf
FOD3120SDV
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: IGBT driver; 5kV; Gull wing 8; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: IGBT driver
Insulation voltage: 5kV
Case: Gull wing 8
Slew rate: 35kV/μs
Turn-on time: 60ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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MC74AC132DG MC74AC132DG.PDF
MC74AC132DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Case: SO14
Mounting: SMD
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 2...6V DC
Family: AC
Technology: CMOS
auf Bestellung 618 Stücke:
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152+0.56 EUR
204+0.42 EUR
218+0.39 EUR
232+0.37 EUR
248+0.35 EUR
275+0.32 EUR
550+0.31 EUR
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BCP56-16T1G BCP56_ser.pdf
BCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
auf Bestellung 6951 Stücke:
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107+0.8 EUR
169+0.5 EUR
214+0.39 EUR
239+0.36 EUR
266+0.32 EUR
500+0.27 EUR
1000+0.23 EUR
2000+0.19 EUR
3000+0.17 EUR
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BCP56-16T3G BCP56T1-D.PDF
BCP56-16T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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SBCP56-16T1G BCP56_ser.pdf
SBCP56-16T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N7002K 2N7002K-FSC-D.PDF
2N7002K
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.27A
Pulsed drain current: 5A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 3346 Stücke:
Lieferzeit 14-21 Tag (e)
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209+0.4 EUR
272+0.31 EUR
329+0.26 EUR
565+0.15 EUR
700+0.12 EUR
987+0.087 EUR
1076+0.079 EUR
1500+0.076 EUR
3000+0.075 EUR
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2N7002KT1G 2N7002K.PDF
2N7002KT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.38A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N4742A 1N47xxA.PDF
1N4742A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N47xxA
auf Bestellung 5948 Stücke:
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715+0.12 EUR
1352+0.063 EUR
1598+0.054 EUR
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1N4742ATR 1N47xxA.PDF
1N4742ATR
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
auf Bestellung 91 Stücke:
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91+0.94 EUR
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LM317TG LM317.pdf
LM317TG
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Manufacturer series: LM317
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
auf Bestellung 119 Stücke:
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99+0.87 EUR
119+0.71 EUR
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CAT24C16HU4I-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2048x8bit
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Access time: 900ns
Produkt ist nicht verfügbar
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BC847CDXV6T1G BC847CDXV6T1-D.PDF
BC847CDXV6T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
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