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FDB44N25TM

FDB44N25TM onsemi


fdb44n25-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
auf Bestellung 10400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.78 EUR
1600+1.65 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDB44N25TM onsemi

Description: MOSFET N-CH 250V 44A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V, Power Dissipation (Max): 307W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V.

Weitere Produktangebote FDB44N25TM nach Preis ab 1.82 EUR bis 5.44 EUR

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FDB44N25TM FDB44N25TM Hersteller : ONSEMI FDB44N25.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Gate charge: 61nC
On-state resistance: 69mΩ
Drain current: 26.4A
Gate-source voltage: ±30V
Drain-source voltage: 250V
Power dissipation: 307W
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: UniFET™
Polarisation: unipolar
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
30+2.45 EUR
36+2 EUR
39+1.84 EUR
100+1.82 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
FDB44N25TM FDB44N25TM Hersteller : onsemi / Fairchild FDB44N25-D.pdf MOSFETs 250V N-Ch MOSFET
auf Bestellung 4595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.8 EUR
10+3.34 EUR
100+2.32 EUR
800+1.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB44N25TM FDB44N25TM Hersteller : onsemi fdb44n25-d.pdf MOSFETs 250V N-Ch MOSFET
auf Bestellung 3287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.3 EUR
10+3.4 EUR
100+2.32 EUR
500+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB44N25TM FDB44N25TM Hersteller : onsemi fdb44n25-d.pdf Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
auf Bestellung 10474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.54 EUR
100+2.46 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH