FDB44N25TM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Produktrezensionen
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Technische Details FDB44N25TM onsemi
Description: ONSEMI - FDB44N25TM - Leistungs-MOSFET, n-Kanal, 250 V, 44 A, 0.069 ohm, TO-263AB, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 250V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 44A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 307W, Bauform - Transistor: TO-263AB, Anzahl der Pins: 2Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.069ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote FDB44N25TM nach Preis ab 2.17 EUR bis 6.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDB44N25TM | ON Semiconductor |
Trans MOSFET N-CH 250V 44A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB44N25TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Mounting: SMD Polarisation: unipolar Technology: UniFET™ Drain current: 26.4A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 69mΩ Power dissipation: 307W Gate charge: 61nC |
auf Bestellung 533 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB44N25TM | onsemi / Fairchild |
MOSFETs 250V N-Ch MOSFET |
auf Bestellung 4595 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB44N25TM | onsemi |
MOSFETs 250V N-Ch MOSFET |
auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB44N25TM | onsemi |
Description: MOSFET N-CH 250V 44A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
auf Bestellung 10204 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB44N25TM | ONSEMI |
Description: ONSEMI - FDB44N25TM - Leistungs-MOSFET, n-Kanal, 250 V, 44 A, 0.069 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: Y-EX Dauer-Drainstrom Id: 44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 307W Bauform - Transistor: TO-263AB Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.069ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB44N25TM |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 250V 44A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 250V 44A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 785+ | 3.68 EUR |
| FDB44N25TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Mounting: SMD
Polarisation: unipolar
Technology: UniFET™
Drain current: 26.4A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 69mΩ
Power dissipation: 307W
Gate charge: 61nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Mounting: SMD
Polarisation: unipolar
Technology: UniFET™
Drain current: 26.4A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 69mΩ
Power dissipation: 307W
Gate charge: 61nC
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.2 EUR |
| 25+ | 3.44 EUR |
| 32+ | 2.7 EUR |
| 35+ | 2.46 EUR |
| 100+ | 2.17 EUR |
| FDB44N25TM |
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Hersteller: onsemi / Fairchild
MOSFETs 250V N-Ch MOSFET
MOSFETs 250V N-Ch MOSFET
auf Bestellung 4595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.71 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.76 EUR |
| 800+ | 2.24 EUR |
| FDB44N25TM |
|
Hersteller: onsemi
MOSFETs 250V N-Ch MOSFET
MOSFETs 250V N-Ch MOSFET
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.76 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.22 EUR |
| FDB44N25TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
auf Bestellung 10204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.91 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.14 EUR |
| FDB44N25TM |
|
Hersteller: ONSEMI
Description: ONSEMI - FDB44N25TM - Leistungs-MOSFET, n-Kanal, 250 V, 44 A, 0.069 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 307W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.069ohm
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - FDB44N25TM - Leistungs-MOSFET, n-Kanal, 250 V, 44 A, 0.069 ohm, TO-263AB, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 250V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 44A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 307W
Bauform - Transistor: TO-263AB
Anzahl der Pins: 2Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.069ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)