FDB44N25TM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
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Technische Details FDB44N25TM onsemi
Description: MOSFET N-CH 250V 44A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V, Power Dissipation (Max): 307W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V.
Weitere Produktangebote FDB44N25TM nach Preis ab 2.17 EUR bis 6.53 EUR
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FDB44N25TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK Gate charge: 61nC On-state resistance: 69mΩ Drain current: 26.4A Gate-source voltage: ±30V Drain-source voltage: 250V Power dissipation: 307W Case: D2PAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Technology: UniFET™ Polarisation: unipolar |
auf Bestellung 533 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB44N25TM | onsemi / Fairchild |
MOSFETs 250V N-Ch MOSFET |
auf Bestellung 4595 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB44N25TM | onsemi |
Description: MOSFET N-CH 250V 44A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V |
auf Bestellung 10324 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB44N25TM | onsemi |
MOSFETs 250V N-Ch MOSFET |
auf Bestellung 2487 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB44N25TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Gate charge: 61nC
On-state resistance: 69mΩ
Drain current: 26.4A
Gate-source voltage: ±30V
Drain-source voltage: 250V
Power dissipation: 307W
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: UniFET™
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Gate charge: 61nC
On-state resistance: 69mΩ
Drain current: 26.4A
Gate-source voltage: ±30V
Drain-source voltage: 250V
Power dissipation: 307W
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: UniFET™
Polarisation: unipolar
auf Bestellung 533 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.2 EUR |
| 25+ | 3.44 EUR |
| 32+ | 2.7 EUR |
| 35+ | 2.46 EUR |
| 100+ | 2.17 EUR |
| FDB44N25TM |
|
Hersteller: onsemi / Fairchild
MOSFETs 250V N-Ch MOSFET
MOSFETs 250V N-Ch MOSFET
auf Bestellung 4595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.71 EUR |
| 10+ | 3.97 EUR |
| 100+ | 2.76 EUR |
| 800+ | 2.24 EUR |
| FDB44N25TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
Description: MOSFET N-CH 250V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 25 V
auf Bestellung 10324 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.51 EUR |
| 10+ | 4.25 EUR |
| 100+ | 2.95 EUR |
| FDB44N25TM |
|
Hersteller: onsemi
MOSFETs 250V N-Ch MOSFET
MOSFETs 250V N-Ch MOSFET
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 4.13 EUR |
| 100+ | 2.68 EUR |